CN106654015B - Preparation method of electrode-spliced carbon-based perovskite solar cell - Google Patents

Preparation method of electrode-spliced carbon-based perovskite solar cell Download PDF

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CN106654015B
CN106654015B CN201611094567.5A CN201611094567A CN106654015B CN 106654015 B CN106654015 B CN 106654015B CN 201611094567 A CN201611094567 A CN 201611094567A CN 106654015 B CN106654015 B CN 106654015B
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conductive
conductive glass
electrode
layer
solar cell
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CN106654015A (en
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李成辉
魏爱香
郑海松
李秋
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Guangdong University of Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a preparation method of an electrode splicing type carbon-based perovskite solar cell, which comprises the following steps: obtaining conductive glass with the edge conductive film removed through mechanical cutting; the plurality of pieces of conductive glass are spliced on the glass substrate through the adhesive layer; sequentially depositing a hole blocking layer and a perovskite light absorption layer in a preset area on the upper surface of the conductive glass from bottom to top to be used as a battery piece photo-anode; arranging a conductive carbon film on the upper surface of the conductive glass to be used as a cell slice photocathode; the conductive carbon film is connected with the perovskite light absorption layer, and the photocathode of the cell is connected with the conductive glass of the photoanode of the adjacent previous cell or the next cell. The conductive glass is cut in a mechanical cutting mode, the conductive film on the edge is removed in the cutting process, the adjacent photo-anode and photo-cathode are insulated, then the electrodes are spliced, the problem of difficulty in control caused by wet etching of the conductive glass is solved, the process difficulty is reduced, the photo-anode and the photo-cathode can be manufactured respectively and independently, and the manufacturing cost of the battery is reduced.

Description

Preparation method of electrode-spliced carbon-based perovskite solar cell
Technical Field
The invention relates to the technical field of perovskite solar cells, in particular to a preparation method of an electrode splicing type carbon-based perovskite solar cell.
Background
In recent years, with the continuous progress of human society, the demand for energy is continuously increased, the increase of traditional fossil energy proves that the reserves are lower than the consumption, which causes energy crisis, and the large amount of fossil energy is used to cause environmental pollution, so that the two problems of energy shortage and environmental pollution seriously threaten the development of society and economy, and become the focus of attention of all countries in the world. Therefore, all countries strive to explore and create own new energy, and the solar cell is used as a clean and renewable energy source, can well solve two problems of energy crisis and environmental pollution simultaneously, and has wide development prospect. However, the power generation cost of the solar cell is still higher than that of the traditional fossil energy, so that the development of a novel solar cell with high efficiency and low cost is a technical basis for realizing the wide application of solar energy.
Perovskite solar cells are novel solar cells formed by combining organic materials and inorganic materials, and are devices for converting solar energy into electric energy like monocrystalline silicon, polycrystalline silicon and thin-film solar cells. Compared with other types of solar cells, perovskite solar cells are low in cost, inexpensive to manufacture, and flexible. However, the stability is poor, so that the method is still in the research field and cannot be widely applied to the market.
However, with the continuous development and progress of scientific technology, the development of perovskite solar cells is gradually accelerated, wherein since 2009 organic-inorganic hybrid perovskite solar cells, the cell conversion efficiency thereof has been improved from 3.8% to 22.1% at a surprising rate.
Among them, carbon-based perovskite solar cells are one of the research hotspots in this field, and their stability is good. The preparation of the carbon-based perovskite solar cell generally adopts a wet etching method to take conductive glass as two different electrode regions, wherein the middle etching region is an insulating region, and the two sides are conductive regions. However, if the etching time is improperly controlled, excessive etching is likely to occur, which may increase the sheet resistance of the conductive glass and affect the photoelectric performance of the battery.
Disclosure of Invention
The invention aims to provide a preparation method of an electrode splicing type carbon-based perovskite solar cell, which adopts an electrode splicing mode to replace wet etching conductive glass, solves the problem of difficulty in control caused by wet etching conductive glass in a cell manufacturing device, reduces troubles in operation, and has simple process and low manufacturing cost.
In order to solve the technical problem, an embodiment of the present invention provides a method for preparing an electrode-spliced carbon-based perovskite solar cell, including:
obtaining conductive glass with the edge conductive film removed through mechanical cutting;
the conductive glass is spliced on the glass substrate through the adhesive layer;
sequentially depositing a hole blocking layer and a perovskite light absorption layer in a preset area on the upper surface of the conductive glass from bottom to top to serve as a cell photo-anode;
arranging a conductive carbon film on the upper surface of the conductive glass to be used as a cell slice photocathode;
the conductive carbon film is connected with the perovskite light absorption layer, and the photocathode of the cell is connected with the conductive glass of the photoanode of the adjacent previous cell or the next cell;
the conductive glass with the edge conductive film removed is obtained by mechanical cutting, the cutting surface is inclined towards the inner side of the conductive glass, so that the side surface and the bottom surface of the conductive glass form an acute angle, and the conductive films of the adjacent conductive glasses are insulated.
The deposition method of the hole blocking layer comprises the following steps:
protecting the photo-anode leading-out electrode area of the conductive glass by adopting a high-temperature resistant adhesive tape;
spin coating TiO on the conductive glass2Dissolving the sol, and standing for 5-10 min;
subjecting the spin-coated TiO to spin coating2Drying the conductive glass of the sol at 95-100 ℃ for 5-10 min;
sintering the dried conductive glass at high temperature of 490-500 ℃ to obtain TiO2The dense layer acts as a hole blocking layer.
Wherein, the TiO is2The thickness of the compact layer is 100 nm-200 nm.
The deposition method of the perovskite light absorption layer comprises the following steps:
in the TiO2TiO diluted by ethanol on the compact layer2Preparation of TiO from slurry by spin coating2A mesoporous layer;
taking 1 mmol-1.2 mmol PbI2Dissolving in DMF solvent, sealing and magnetically stirring in water bath at 80-90 deg.c for 30-32 min to prepare 1.0-1.2 mol/L solution A;
dripping the A liquid on the mesoporous layer, standing for 15-20 s, performing spin coating, controlling the spin coating times according to the required thickness, standing for 5-10 min after each spin coating, and drying at 90-100 ℃ for 15-20 min to obtain uniform and flat PbI2A film;
mixing the PbI2The film is placed in CH with 7 mg/mL-10 mg/mL solvent being isopropanol3NH3Standing in the solution I;
after standing for a preset reaction time and taking out, reacting the PbI2Drying the film at 90-100 deg.c for 15-20 min to obtain the perovskite film.
Wherein the thickness of the perovskite light absorption layer is 300 nm-500 nm.
Wherein the conductive carbon film has a thickness of 10 to 25 μm.
The conductive glass is plated with a fluorine-doped tin oxide conductive film.
Wherein the thickness of the conductive glass is 1 mm-2.3 mm.
Wherein the thickness of the glass substrate is 1 mm-1.2 mm.
Wherein, the gluing layer is a double-sided glue layer or an epoxy resin layer.
Compared with the prior art, the electrode splicing type carbon-based perovskite solar cell preparation method provided by the embodiment of the invention has the following advantages:
the preparation method of the electrode-spliced carbon-based perovskite solar cell provided by the embodiment of the invention comprises the following steps:
obtaining conductive glass with the edge conductive film removed through mechanical cutting;
the conductive glass is spliced on the glass substrate through the adhesive layer;
sequentially depositing a hole blocking layer and a perovskite light absorption layer in a preset area on the upper surface of the conductive glass from bottom to top to serve as a cell photo-anode;
arranging a conductive carbon film on the upper surface of the conductive glass to be used as a cell slice photocathode;
the conductive carbon film is connected with the perovskite light absorption layer, and the photocathode of the cell is connected with the conductive glass of the photoanode of the adjacent previous cell or the next cell;
the conductive glass with the edge conductive film removed is obtained by mechanical cutting, the cutting surface is inclined towards the inner side of the conductive glass, so that the side surface and the bottom surface of the conductive glass form an acute angle, and the conductive films of the adjacent conductive glasses are insulated.
According to the preparation method of the electrode splicing type carbon-based perovskite solar cell, the conductive glass is cut in a mechanical cutting mode to obtain the conductive glass with the required size, the conductive film on the edge is removed in the cutting process, the adjacent photo-anode and photo-cathode are insulated, then the electrode splicing is carried out, the problem of difficulty in control caused by wet etching of the conductive glass is avoided, and the process difficulty is reduced. Meanwhile, the photo-anode and the photo-cathode of the battery can be manufactured independently respectively, so that the manufacturing cost of the battery is reduced.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic flow chart illustrating steps of a method for manufacturing an electrode-spliced carbon-based perovskite solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an electrode-spliced carbon-based perovskite solar cell prepared by the electrode-spliced carbon-based perovskite solar cell preparation method provided by the embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, fig. 1 is a schematic flow chart illustrating steps of a method for manufacturing an electrode-spliced carbon-based perovskite solar cell according to an embodiment of the invention; fig. 2 is a schematic structural diagram of an electrode-spliced carbon-based perovskite solar cell prepared by the electrode-spliced carbon-based perovskite solar cell preparation method provided by the embodiment of the invention.
In a specific embodiment, the preparation method of the electrode-spliced carbon-based perovskite solar cell comprises the following steps:
step 1, obtaining conductive glass 3 with the edge conductive film removed through mechanical cutting;
step 2, splicing a plurality of pieces of conductive glass 3 on a glass substrate 1 through an adhesive layer 2;
step 3, sequentially depositing a hole blocking layer 4 and a perovskite light absorption layer 5 in a preset area on the upper surface of the conductive glass 3 from bottom to top to be used as a battery piece photo-anode;
step 4, arranging a conductive carbon film on the upper surface of the conductive glass 3 to be used as a cell slice photocathode;
and 5, connecting the conductive carbon film with the perovskite light absorption layer 5, and connecting the photocathode of the cell with the conductive glass 3 of the photoanode of the adjacent previous cell or the next cell.
According to the preparation method of the electrode splicing type carbon-based perovskite solar cell, the conductive glass 3 is cut in a mechanical cutting mode to obtain the conductive glass 3 with the required size, the conductive film on the edge is removed in the cutting process, the adjacent photo-anode and photo-cathode are insulated, then the electrode splicing is carried out, the problem of difficulty in control caused by wet etching of the conductive glass 3 is avoided, and the process difficulty is reduced. Meanwhile, the photo-anode and the photo-cathode of the battery can be manufactured independently respectively, so that the manufacturing cost of the battery is reduced. Meanwhile, if the batteries can not work normally when being found in the splicing process, the batteries can be directly disassembled and replaced with new battery pieces, because the structures of all the battery pieces are the same, the batteries can be directly replaced, and the photo-anode area or the photo-cathode area can be directly replaced when being damaged, so that the splicing process is simple and convenient and has low cost.
In the invention, the manufacture of the photo-anode and the manufacture of the photo-cathode of the cell are not affected, and the electrode splicing is carried out only after the respective manufacture is finished, thereby greatly reducing the process difficulty and the manufacture cost.
In the early stage, the cut conductive glass 3 is firstly arranged on the glass substrate 1, then the hole blocking layer 4 and the perovskite absorption layer are deposited on the photo-anode part, the conductive carbon film is arranged on the photo-cathode part, then the photo-cathode is covered on the photo-anode, the conductive carbon film is connected with the perovskite absorption layer, and the photo-cathode part is connected with the conductive glass 3 extending or exposed from the next cell slice or the previous cell slice, so that the series connection of the adjacent cell slices is realized.
In the present invention, the surface of the conductive glass 3 on which the conductive film is provided is defined as the upper surface of the conductive glass 3.
The invention does not specifically limit what machinery is used and how to cut the conductive glass 3 in the process of mechanically cutting the conductive glass, can cut the conductive glass by utilizing the low cutting precision of mechanical cutting, and can also lead the side surface of the conductive glass 3 obtained by cutting not to be vertical to the ground but to form an acute angle with the ground by utilizing the mode of inclining the cutting surface to the inner side of the conductive glass 3, so that the conductive films at the edges of the adjacent conductive glasses 3 have certain intervals in the electrode splicing process, thereby realizing natural insulation.
In the present invention, a hole transport layer made of other materials may be used in addition to the conductive carbon film as the hole transport layer, and the present invention is not limited to this.
According to the invention, two adjacent perovskite solar cells are spliced by adopting an electrode splicing mode, the splicing of a photo-anode and the splicing of a photo-cathode are included, after the photo-anode part is manufactured, the hole blocking layer 4 and the perovskite light absorption layer 5 are deposited on the same conductive glass 3 serving as the photo-anode, the photo-anode of the two adjacent perovskite solar cells is directly spliced, and the conductive film at the edge of the conductive glass 3 serving as the photo-anode is damaged in the mechanical processing process, so that the photo-anode of the two adjacent perovskite solar cells is insulated.
And similarly, the splicing mode of the photocathode is similar to that of the photoanode, and the photocathodes of two adjacent perovskite solar cells are spliced.
In the cell splicing of the present invention, the conductive glass 3 may be disposed on the glass substrate at a certain distance, but in order to reduce space waste and improve space utilization efficiency, the distance between the conductive glasses is reduced as much as possible.
Two pieces of conductive glass 3 are arranged on a glass substrate 1, and a conductive carbon film is arranged in a target area of the two pieces of conductive glass 3 by adopting commercial conductive carbon paste through a glass rod and an adhesive tape auxiliary blade coating mode. Of course, some special methods may be adopted to directly set the conductive carbon film on the conductive glass 3, the conductive carbon film is combined with the conductive film on the conductive glass 3 due to special relations, and the bonding force between the conductive carbon film and the glass is poor in the area without the conductive film, and the conductive carbon film at the joint of the two conductive glasses 3 can be removed by cleaning and other methods. Alternatively, when the conductive carbon film is provided, the substrate provided with the conductive glass 3 may be placed under a special template, and the template may be used to shield the conductive glass 3 at a position where the conductive carbon film is not required, so that the conductive carbon film may be provided only in a specific region of the conductive glass 3 serving as the photocathode.
The conductive carbon film in the present invention, which generally has a thickness of 10 to 25 μm, functions as a hole transport layer to improve the efficiency of holes to a photocathode.
Of course, the conductive carbon film may be produced by other production methods, and the thickness and the production method of the conductive carbon film are not particularly limited in the present invention.
In the present invention, other hole transport layers may be disposed on the photocathode, and the present invention is not particularly limited thereto.
Through the independent manufacture of the photo-anode and the photo-cathode, the photo-anode and the photo-cathode are not required to be manufactured in a front-back sequence like the prior art, and finally, the electrodes can be directly spliced and connected as long as the electrodes are manufactured according to preset size parameters, so that the manufacturing efficiency is greatly improved, and the manufacturing cost is reduced.
In the present invention, TiO is generally used for the hole-blocking layer 42Dense layer, deposition of the hole blocking layer 4The product method comprises the following steps:
protecting the photo-anode leading-out electrode area of the conductive glass 3 by adopting a high-temperature resistant adhesive tape;
coating TiO on the conductive glass 3 by spin coating2Dissolving the sol, and standing for 5-10 min;
subjecting the spin-coated TiO to spin coating2Drying the conductive glass 3 of the sol at 95-100 ℃ for 5-10 min;
sintering the dried conductive glass 3 at a high temperature of 490-500 ℃ to obtain TiO2The dense layer acts as a hole blocking layer 4.
The TiO is2The thickness of the compact layer is 100 nm-200 nm.
The leading-out electrode of the photo-anode is connected with the photo-cathode of the previous battery or the next battery, and the high-temperature resistant adhesive tape is adopted for protection in the invention so as to ensure that the region does not have the deposition of a hole blocking layer 4 and a perovskite absorption layer which are needed later, or the high-temperature resistant adhesive tape is removed after the deposition. In the present invention, the protection may be performed by other means besides using the high temperature resistant adhesive tape, and the present invention is not limited to this.
It should be noted that the invention does not specifically limit the material, thickness, density and deposition process of the hole blocking layer 4, the hole blocking layer 4 is used to prevent holes in the perovskite light absorption layer 5 from diffusing to the photo-anode, and other hole blocking layers 4 can also be used in the invention.
For the deposition method of the perovskite light absorption layer, the following methods are generally used, including:
in the TiO2TiO diluted by ethanol on the compact layer2Preparing a TiO2 mesoporous layer by the slurry through a spin-coating method;
taking 1 mmol-1.2 mmol PbI2Dissolving in DMF solvent, sealing and magnetically stirring in water bath at 80-90 deg.c for 30-32 min to prepare 1.0-1.2 mol/L solution A;
dripping the A liquid on the mesoporous layer, standing for 15-20 s, performing spin coating, controlling the spin coating times according to the required thickness, standing for 5-10 min after each spin coating, anddrying at 90-100 ℃ for 15-20 min to obtain uniform and flat PbI2A film;
mixing the PbI2The film is placed in a CH3NH3I solution with 7 mg/mL-10 mg/mL of isopropanol as a solvent for standing;
after standing for a preset reaction time and taking out, reacting the PbI2Drying the film at 90-100 deg.c for 15-20 min to obtain the perovskite film.
By setting up TiO2The mesoporous structure is used as an electron transmission layer, so that the electron transmission in the perovskite light absorption layer 5 to the photo-anode is improved, the diffusion distance is increased, the recombination is reduced, and the light absorption efficiency is improved.
The thickness of the perovskite light absorption layer is generally 300nm to 500 nm.
It should be noted that the low temperature method for preparing TiO is adopted in the present invention2The mesoporous structure can also adopt a high-temperature method to prepare TiO2The mesoporous structure is only different in manufacturing process cost, the method is not limited to the perovskite light absorption layer manufactured by the method, and the type and the thickness of the perovskite light absorption layer are not particularly limited.
In the present invention, the perovskite light absorption layer 5 generally shields the hole blocking layer 4 to prevent the hole blocking layer 4 from directly contacting the conductive carbon film of the photocathode 6 to cause electrical leakage.
In one embodiment, the conductive glass 3 is a conductive glass 3 plated with a fluorine-doped tin oxide conductive film.
The thickness of the conductive glass 3 is generally 1mm to 2.3 mm. The thickness of the conductive glass 3 here means the sum of the glass portion and the conductive film.
It should be noted that the thickness of the conductive glass 3 and the thickness, type and deposition manner of the conductive film of the conductive glass 3 are not particularly limited in the present invention.
The thickness of the glass substrate 1 is generally 1mm to 1.2 mm.
Conductive glass 3 is connected through gluing layer 2 with glass substrate 1, and glass substrate 1's effect is fixed conductive glass 3, gluing layer 2 is double faced adhesive tape or epoxy layer, and the double faced adhesive tape also can be ordinary double faced adhesive tape, also can be high temperature resistant double faced adhesive tape. Of course, in the present invention, other adhesive layers 2 may be used to connect the conductive glass 3 and the glass substrate 1, and the thickness and type of the adhesive layers are not particularly limited in the present invention.
In one embodiment, the glass substrate has a thickness of 1.2mm, the conductive glass 3 has a thickness of 2.2mm, and the TiO is2The thickness of the compact layer is 125nm, the thickness of the perovskite light absorption layer is 350nm, and the thickness of the conductive carbon film is 20 μm.
In another embodiment, the carbon-based perovskite type solar cell has the structure: the thickness of the glass substrate is 1.1mm, the thickness of the transparent conductive glass 3 is 2.2mm, and the TiO is2The thickness of the compact layer is 150nm, the thickness of the perovskite light absorption layer is 435nm, and the thickness of the conductive carbon film is 20 microns.
In another embodiment, the carbon-based perovskite type solar cell has the structure: the thickness of the glass substrate is 1.0mm, the thickness of the transparent conductive glass 3 is 2.2mm, and the TiO is2The thickness of the compact layer is 200nm, the thickness of the perovskite light absorption layer is 490nm, and the thickness of the conductive carbon film is 20 μm.
In summary, according to the preparation method of the electrode-spliced carbon-based perovskite solar cell provided by the embodiment of the invention, the conductive glass cut in a mechanical cutting manner is subjected to electrode splicing to replace wet etching conductive glass in the prior art, so that the photocathode layer and the photoanode layer are effectively insulated, the problem of difficulty in control of a cell manufacturing device caused by wet etching conductive glass is solved, the process difficulty is reduced, and the lower surface of the photocathode layer is provided with the conductive carbon film as the hole transport layer, so that the cell manufacturing cost is reduced.
The electrode-spliced carbon-based perovskite solar cell preparation method provided by the invention is described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (10)

1. A preparation method of an electrode-spliced carbon-based perovskite solar cell is characterized by comprising the following steps:
obtaining conductive glass with the edge conductive film removed through mechanical cutting;
the conductive glass is spliced on the glass substrate through the adhesive layer;
sequentially depositing a hole blocking layer and a perovskite light absorption layer in a preset area on the upper surface of the conductive glass from bottom to top to serve as a cell photo-anode;
arranging a conductive carbon film on the upper surface of the conductive glass to be used as a cell slice photocathode;
the conductive carbon film is connected with the perovskite light absorption layer, and the photocathode of the cell is connected with the conductive glass of the photoanode of the adjacent previous cell or the next cell;
the conductive glass with the edge conductive film removed is obtained by mechanical cutting, the cutting surface is inclined towards the inner side of the conductive glass, so that the side surface and the bottom surface of the conductive glass form an acute angle, and the conductive films of the adjacent conductive glasses are insulated.
2. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 1, wherein the method for depositing the hole blocking layer comprises the following steps:
protecting the photo-anode leading-out electrode area of the conductive glass by adopting a high-temperature resistant adhesive tape;
spin coating TiO on the conductive glass2Dissolving the sol, and standing for 5-10 min;
subjecting the spin-coated TiO to spin coating2Drying the conductive glass of the sol at 95-100 ℃ for 5-10 min;
sintering the dried conductive glass at high temperature of 490-500 ℃ to obtain TiO2The dense layer acts as a hole blocking layer.
3. The method for preparing electrode-spliced carbon-based perovskite solar cell according to claim 2Method characterized in that said TiO is2The thickness of the compact layer is 100 nm-200 nm.
4. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 3, wherein the method for depositing the perovskite light absorption layer comprises the following steps:
in the TiO2TiO diluted by ethanol on the compact layer2Preparation of TiO from slurry by spin coating2A mesoporous layer;
taking 1 mmol-1.2 mmol PbI2Dissolving in DMF solvent, sealing and magnetically stirring in water bath at 80-90 deg.c for 30-32 min to prepare 1.0-1.2 mol/L solution A;
dripping the A liquid on the mesoporous layer, standing for 15-20 s, performing spin coating, controlling the spin coating times according to the required thickness, standing for 5-10 min after each spin coating, and drying at 90-100 ℃ for 15-20 min to obtain uniform and flat PbI2A film;
mixing the PbI2The film is placed in CH with 7 mg/mL-10 mg/mL solvent being isopropanol3NH3Standing in the solution I;
after standing for a preset reaction time and taking out, reacting the PbI2Drying the film at 90-100 deg.c for 15-20 min to obtain the perovskite film.
5. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 4, wherein the thickness of the perovskite light absorption layer is 300 nm-500 nm.
6. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 1, wherein the thickness of the conductive carbon film is 10-25 μm.
7. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 1, wherein the conductive glass is a conductive glass plated with a fluorine-doped tin oxide conductive film.
8. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 7, wherein the thickness of the conductive glass is 1mm to 2.3 mm.
9. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to claim 1, wherein the thickness of the glass substrate is 1mm to 1.2 mm.
10. The method for preparing the electrode-spliced carbon-based perovskite solar cell according to any one of claims 1 to 9, wherein the adhesive layer is a double-sided adhesive layer or an epoxy resin layer.
CN201611094567.5A 2016-12-01 2016-12-01 Preparation method of electrode-spliced carbon-based perovskite solar cell Expired - Fee Related CN106654015B (en)

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