CN101937948A - Mask plate for preparing receiver of light-gathering film battery - Google Patents
Mask plate for preparing receiver of light-gathering film battery Download PDFInfo
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- CN101937948A CN101937948A CN2010102837667A CN201010283766A CN101937948A CN 101937948 A CN101937948 A CN 101937948A CN 2010102837667 A CN2010102837667 A CN 2010102837667A CN 201010283766 A CN201010283766 A CN 201010283766A CN 101937948 A CN101937948 A CN 101937948A
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Abstract
The invention discloses a mask plate for preparing a receiver of a light-gathering film battery. A complete mask plate consists of a first mask plate, a second mask plate and a third mask plate, wherein the first mask plate is used for preparing a back electrode and is provided with a plurality of transverse main grid lines and longitudinal main grid lines which are vertical to each other and used for partitioning the first mask plate into a plurality of groups ad a plurality of rows respectively so as to partition the first mask plate into a plurality of blank spaces; each blank space corresponds to the area of one battery; the second mask plate is used for preparing a copper-indium-gallium-selenium absorbing layer, a buffer layer and a transparent conducting layer and is bilaterally symmetrical to the first mask plate; and the third mask plate is used for preparing a metal grid line and is provided with a plurality of main grids and a plurality of thin grids. The mask plate of the invention is used for preparing the receiver of a solar light-gathering photovoltaic system and the separation and serial connection of single batteries are realized in a film deposition process without any external connecting wire, so that production cost is lowered and the reliability of the receiver is improved.
Description
Technical field
The present invention relates to the solar concentrating photovoltaic power generation technical field, be specifically related to a kind of mask plate that is used to prepare the receiver of optically focused hull cell.
Background technology
In recent years, solar energy has become the emphasis of modern society's development of resources, and photovoltaic generation is subjected to unprecedented attention in China, and solar power generation is becoming fresh combatants in China's renewable energy utilization.Wherein, to the concern and the research and development of solar concentration photovoltaic system (CPV), brought photovoltaic generation into the new epoch.
Solar concentration photovoltaic system by optical element being focused on the less battery chip of tens times of the sunlight on certain area even thousands of times, thereby reduced photronic consumption effectively, reduce the battery cost significantly.
In the solar concentration photovoltaic system, the receiver in the concentrating component is made up of one or more photovoltaic cells, and the sunlight after accepting to converge produces opto-electronic conversion.Receiver is mainly GaAs based multijunction cell and crystal silicon cell.Wherein, as the reception battery in the some optically focused CPV assembly, polycrystal silicon cell then is to be connected to form linear receiver by peripheral leads to GaAs based multijunction cell by independent.
Hull cell also can be used as the CPV receiver, as Copper Indium Gallium Selenide (Cu (In, Ga) Se2, CIGS) battery.But, in the online optically focused CPV system, because two electrodes of CIGS battery all in substrate top surface, form linear receiver with each independent CIGS concentrator cell interconnection and just have difficulty.Peripheral wiring meeting between each battery increases the shade of battery, also can produce safety problem in the high light owing to being exposed to.
Summary of the invention
The invention provides a kind of mask plate that is used to prepare the receiver of Salar light-gathering hull cell, realize the separation and the interconnected in series of a plurality of Salar light-gathering hull cells, need not to use external cabling, effectively provide cost savings, and improved the reliability of receiver.
A kind of mask plate that is used to prepare the receiver of optically focused hull cell is the complete mask plate that is made of first mask plate, second mask plate and the 3rd mask plate, wherein,
(1) described first mask plate is used for carrying out the back electrode sputter on substrate, described first mask plate is provided with some mutually perpendicular horizontal main grid lines and vertical main grid line, described horizontal main grid line is used for described first mask plate is divided into some groups, described vertical main grid line is used for described first mask plate is divided into some row, like this, described horizontal main grid line and vertical main grid line are divided into some spaces with described first mask plate, the area of the corresponding battery in each space;
The length of described first mask plate is not less than the length of substrate, and the width of described first mask plate is not less than the width of substrate, and the length of described like this first mask plate and width can cover the length and the width of substrate.Usually, the length of described first mask plate equals the length of substrate, and the width of described first mask plate equals the width of substrate, and the length of described like this first mask plate and width just cover the length and the width of substrate.The group number of described first mask plate can determine that every group becomes a linear receiver that comprises several cells of connecting successively at last by every group width, the width of horizontal main grid line and the width of first mask plate; The number of the row of described first mask plate, promptly every group number of battery cells is determined by the width of the length of every battery, vertical main grid line and the length of first mask plate.Be provided with rectangular label on two left hand corner in described each space, the length L of described rectangular label satisfies: 0.05mm＜L＜1mm, width W satisfies: 0.05mm＜W＜1mm.
Behind deposit film on the substrate, do not have the back electrode material with described first mask plate, all deposit the back electrode material in other zone of substrate in the zone of laterally main grid line and vertical main grid line and rectangular label covering.Like this, vertically the width of main grid line has determined in the distance between the adjacent cell on the same linear receiver.Though since the zone between the adjacent cell by illumination to still can not producing photoelectric current, so this dwindles apart from needs as far as possible.
In order to reach this target, can save vertical main grid line (width that vertical main grid line is set in other words is zero), but after finishing the back electrode film preparation, utilize laser scribing to carry out the separation of the back electrode among every row, because the width of laser can only can produce minimum dead band like this in the millimeter magnitude between adjacent cell.
Described substrate is dielectric substrate or the conductive substrates that is coated with dielectric layer.
(2) described second mask plate is used to prepare CuInGaSe absorbed layer, resilient coating and transparency conducting layer, described second mask plate and the described first mask plate left-right symmetric, mirror image each other in other words.
Equally, if adopt first mask plate that saves vertical main grid line, then described second mask plate also saves vertical main grid line (width that vertical main grid line is set in other words is zero).Like this, after using described second mask plate to finish the preparation of above-mentioned CuInGaSe absorbed layer, resilient coating and transparency conducting layer trilaminate material, need carry out the separation of this trilaminate material among every row by machinery or laser scribing, to reduce the dead band between the adjacent cell as much as possible.
Behind deposit film on back electrode and the substrate, form CuInGaSe absorbed layer, resilient coating and transparency conducting layer with described second mask plate;
(3) described the 3rd mask plate is used to prepare metal grid lines; Described the 3rd mask plate is provided with some main grids and some thin grid, and light induced electron is pooled on the described main grid by described thin grid.
Described thin grid are trapezoidal, and more near main grid, the width of thin grid is big more, and the face resistance of trapezoidal thin grid is more little, avoid causing that because of the increase of current density series loss increases.This design effectively reduces the series loss of thin grid when reducing thin grid area coverage.
On the one hand, because thin grid are positioned at the light area, the area coverage of thin grid should reduce as far as possible, to reduce shadow loss; On the other hand, thin grid also will have enough big size with the acquisition low resistance, the ohmic loss when reducing photoelectric current and flowing through thin grid.The balance of this two aspect requires thin grid designs (size, spacing, material) to adjust according to specified conditions, and these conditions comprise the size of battery, sheet resistance of light concentrating times and preceding electrode or the like.
Because main grid is not arrived by illumination, the main grid area need not drop to minimum; But less main grid width means on the equal area substrate can prepare more battery, promptly obtains higher open circuit voltage, and therefore, the width of main grid is moderate.In addition, another factor that need consider during main grid size (thickness and width) design will make the ohmic loss of photoelectric current on main grid can drop to minimum exactly.
The length of described the 3rd mask plate is not less than the length of substrate, and the width of described the 3rd mask plate is not less than the width of substrate, and usually, the length of described the 3rd mask plate equals the length of substrate, and the width of described the 3rd mask plate equals the width of substrate.
Behind described the 3rd mask plate plated metal grid line, several cells in every group constitute series current by metal grid lines, form linear receiver.
With respect to ink-jet-impact system, adopt the 3rd above-mentioned mask plate to prepare metal grid lines, can avoid high-temperature annealing process, thereby avoid battery is caused damage; With respect to photoetching process, adopt described the 3rd mask plate to prepare metal grid lines, can not be subjected to the restriction of grid line thickness, can not impact transparency conducting layer yet.
The mask plate that is used to prepare the receiver of optically focused hull cell of the present invention can form a plurality of cells in the process of thin film deposition, realize the series connection between each cell simultaneously, need not to use external cabling, effectively provide cost savings, and improved the reliability of receiver.
Description of drawings
Fig. 1 is the structural representation of single CIGS thin-film battery;
Fig. 2 is two kinds of structural representations of first mask plate;
Fig. 3 is two kinds of structural representations of second mask plate;
Fig. 4 is the structural representation of the 3rd mask plate;
Fig. 5 is the device schematic cross-section of each processing step correspondence;
Fig. 6 is the surface texture schematic diagram of the hull cell of preparation.
Embodiment
Describe the present invention in detail below in conjunction with embodiment and accompanying drawing, but the present invention is not limited to this.
Fig. 1 is typical Copper Indium Gallium Selenide battery structure schematic diagram.On substrate 110, deposit back electrode 120 (being generally molybdenum) successively, CuInGaSe absorbed layer 130, resilient coating 140 and transparency conducting layer 150 (being generally nesa coating TCO) and metal grid lines 160.The light induced electron that produces is collected by metal grid lines 160, and by external load circuit 170, gets back to back electrode 120 then.
For a plurality of independently batteries of preparation on same substrate, need carry out the preparation of back electrode 120 successively; The preparation of CuInGaSe absorbed layer 130, resilient coating 140 and transparency conducting layer 150; Preparation with metal grid lines 160.
Mask plate shown in Fig. 2 (a) can be used for preparing back electrode 120 on substrate 110.
Fig. 2 (a) is the structural representation of first mask plate 210.First mask plate 210 is provided with some mutually perpendicular horizontal main grid lines 230 and vertical main grid line 250.
The width that the length of first mask plate 210 equals substrate length 270, the first mask plates 210 equals substrate width 260, and therefore first mask plate 210 can cover substrate 110; Laterally main grid line 230 is divided into some groups with first mask plate 210, and the group number can be determined by the width and the substrate width 260 of every group width 280 (being the width of each Copper Indium Gallium Selenide battery), horizontal main grid line 230.First mask plate 210 also comprises vertical main grid line 250, vertically main grid line 250 and horizontal main grid line 230 are vertical and first mask plate 210 is divided into some row, the number of row, promptly every row's number of battery cells is determined by the width and the substrate length 270 of the length 290 of every battery, vertical main grid line 250.Like this, vertically main grid line 250 is divided into some spaces with horizontal main grid line 230 with first mask plate 210, the area of the corresponding battery in each space.Two left hand corner in each space respectively have a rectangular label 240, and the length of rectangular label 240 is 0.5mm, and width is 0.5mm.
Behind preparation film on the substrate 110, do not have the back electrode material with first mask plate 210, all deposit back electrode 120 in other zone of substrate 110 in the zone of vertically main grid line 250, horizontal main grid line 230 and rectangular label 240 coverings.Like this, vertically the width of main grid line 250 has determined the distance between each battery on the same linear receiver.Though since the zone between each battery by illumination to can not produce photoelectric current, the distance between each battery on the same linear receiver need be dwindled as far as possible, therefore the width of vertical main grid line 250 should be as far as possible little.
Photoetching process is the another kind of method of making back electrode.Compare with technical scheme of the present invention, photoetching process also needs to use mask, but also needs extra material and time.
Fig. 3 (a) is the structural representation of second mask plate 310.Second mask plate 310 is used to prepare CuInGaSe absorbed layer 130, resilient coating 140 and transparency conducting layer 150.
From Fig. 3 (a) as can be seen, second mask plate 310 is left-right symmetric figure or mirror images of first mask plate 210.Second mask plate 310 is provided with some mutually perpendicular horizontal main grid lines 330 and vertical main grid line 350.
Equally, the length of second mask plate 310 equals substrate length 370 (identical with the substrate length 270 that indicates on first mask plate 210), the width of second mask plate 310 equals substrate width 360 (identical with the substrate width 260 that indicates on first mask plate 210), and therefore second mask plate 310 can cover substrate 110; Laterally main grid line 330 is divided into some groups with second mask plate 310, the group number can be by every group width 380 (identical with every group the width 280 that indicates on first mask plate 210, i.e. the width of each Copper Indium Gallium Selenide battery), laterally main grid line 330 and substrate width 360 are determined.Second mask plate 310 also comprises vertical main grid line 350, vertically main grid line 350 and horizontal main grid line 330 are vertical and second mask plate 310 is divided into some row, the number of row, be every row's number of battery cells, determine by the width and the substrate length 370 of the length 390 (identical) of every battery, vertical main grid line 350 with the length 290 of the every battery that indicates on first mask plate 210.Like this, vertically main grid line 350 is divided into some spaces with horizontal main grid line 330 with second mask plate 310, the area of the corresponding battery in each space.Two left hand corner in each space respectively have a rectangular label 340, and the length of rectangular label 340 is 0.5mm, and width is 0.5mm.
Fig. 4 (a) is the surface texture schematic diagram of the 3rd mask plate.The 3rd mask plate is used to prepare metal grid lines 160.
Shown in Fig. 4 (a), the 3rd mask plate that is used for the plated metal grid line is provided with some main grids 460 and some thin grid 470, light induced electron is pooled to described main grid 460 by thin grid 470, arrives the back electrode of a last sub-battery then by main grid 460, constitutes series circuit with this.Fig. 4 (b) is one jiao a enlarged drawing of the 3rd mask plate, has shown the shape of main grid 460 and thin grid 470.
Because main grid 460 do not arrive by illumination, so that its area does not need to drop to is minimum; But main grid 460 areas are less, then mean on the equal area substrate to prepare more battery.Another factor that need consider when carrying out the size design (thickness and area) of main grid 460 is to reduce the serial loss of photoelectric current on main grid as far as possible.
Because thin grid 470 are positioned at the light area, the size of thin grid 470 should reduce as far as possible, to reduce shadow loss; On the other hand, thin grid 470 also will have enough big size, the ohmic loss when promptly low resistance reduces photoelectric current and flows through thin grid 470.The balance of this two aspect requires thin grid designs (size, spacing, material) to adjust according to specified conditions.These conditions comprise the sheet resistance or the like of size, light concentrating times and the preceding electrode of battery.
Although for thin grid 470 structures of different batteries also is different,, all can take the thin grid shape of optimizing corresponding to different batteries.Shown in Fig. 4 (b), thin grid 470 are trapezoidal.Light induced electron longitudinally is pooled to main grid 460 after being collected by thin grid 470, and the closer to main grid 460, the current density on the thin grid 470 is big more.In order to reduce series loss, need progressively increase the width of thin grid 470, to reduce series resistance, reduce series loss with this.With respect to the wide thin grid that adopt rectangle, trapezoidal thin grid 470 can be realized the optimum balance of light-receiving area and series loss.
With respect to ink-jet-printing, adopt the 3rd above-mentioned mask plate plated metal grid line, can avoid high-temperature annealing process, thereby avoid battery is caused damage; With respect to photoetching process, adopt described the 3rd mask plate plated metal grid line, can not be subjected to the restriction of grid line thickness, can not impact preceding electrode layer yet.
Fig. 5 is when adopting above-mentioned first mask plate, second mask plate and the 3rd mask plate to prepare thin-film solar cells, the schematic diagram in the device cross section of each processing step correspondence.Owing in first mask plate 210, used vertical main grid line 250 and rectangular label 240, realized separation to back electrode 120, wherein, 520 in the marker space is zones that vertical main grid line 250 covers, the 510th, the zone that rectangular label 240 covers; Owing in second mask plate 310, used vertical main grid line 350 and rectangular label 340, realized separation to CuInGaSe absorbed layer 130, resilient coating 140 and transparency conducting layer 150, wherein, in the marker space 520 is zones that vertical main grid line 350 covers, the 530th, and the zone that rectangular label 340 covers.Because the covering of rectangular label 340, the subregion is not coated with CuInGaSe absorbed layer 130, resilient coating 140 and transparency conducting layer 150 in the back electrode material 120, and is directly exposed in the air.Each bar main grid 460 in the 3rd mask plate is except that the surface current of collecting corresponding cell, also stride across the zone 520 that vertical main grid line 250 and vertical main grid line 350 cover, the zone 530 (the Mo back electrode material of reservation) that covers with rectangular label 340 is connected, and realizes series connection between each sub-battery with this.Therefore, adopt above-mentioned first mask plate, second mask plate and the 3rd mask plate, realize the internal series-connection of battery automatically in the cell preparation process, need not to use aerial lug, cost is low, and the better reliability of receiver.
Fig. 6 is the surface texture schematic diagram that adopts the thin-film solar cells of the first above-mentioned mask plate, second mask plate and the preparation of the 3rd mask plate.After cutting along solid line 650,670 and 690, every group all becomes a linear receiver that is in series by several cells.Dotted line the 640,660, the 680th, the cut-off rule of adjacent two batteries in every Battery pack, that is main grid line 250 and 350 zones that cover.
The substrate of here mentioning 110 refers to dielectric substrate or is coated with the conductive substrates of dielectric layer.
Need to prove, in the above-mentioned scheme, first mask plate 210 can adopt first mask plate 220 shown in Fig. 2 (b) to substitute, its difference just is, the width of vertical main grid line 250 is zero (having omitted vertical main grid line 250 in other words) in first mask plate 220, be positioned at the area that the light area does not but produce photoelectric current with minimizing, to reduce the dead band between the adjacent cell as far as possible.The width of laser after taking first mask plate 220 to finish the back electrode preparation, need carry out longitudinal subdivision to back electrode, owing to can only can produce minimum dead band like this in the millimeter magnitude between adjacent cell by laser scribing.
Correspondingly, second mask plate 310 can adopt second mask plate 320 shown in Fig. 3 (b) to substitute, its difference just is, the width of vertical main grid line 350 is zero (having omitted vertical main grid line 350 in other words) in second mask plate 320, equally also be to be positioned at the area that the light area does not but produce photoelectric current, to reduce the dead band between the adjacent cell as far as possible in order to reduce.After taking second mask plate, 320 preparation CuInGaSe absorbed layer 120, resilient coating 130 and transparency conducting layers 150, need utilize laser scribing to carry out the separation of this trilaminate material, because the width of laser can only can produce minimum dead band like this in the millimeter magnitude between adjacent cell.
Claims (5)
1. a mask plate that is used to prepare the receiver of optically focused hull cell is characterized in that, is the complete mask plate that is made of first mask plate, second mask plate and the 3rd mask plate, wherein,
(1) described first mask plate is used for carrying out the back electrode sputter on substrate, described first mask plate is provided with some mutually perpendicular horizontal main grid lines and vertical main grid line, described horizontal main grid line is used for described first mask plate is divided into some groups, described vertical main grid line is used for described first mask plate is divided into some row, like this, described horizontal main grid line and vertical main grid line are divided into some spaces with described first mask plate, the area of the corresponding battery in each space;
(2) described second mask plate is used to prepare CuInGaSe absorbed layer, resilient coating and transparency conducting layer, described second mask plate and the described first mask plate left-right symmetric;
(3) described the 3rd mask plate is used to prepare metal grid lines; Described the 3rd mask plate is provided with some main grids and some thin grid, and light induced electron converges to described main grid behind the described thin grid of flowing through.
2. mask plate as claimed in claim 1 is characterized in that, the length of described first mask plate equals the length of substrate, and the width of described first mask plate equals the width of substrate.
3. mask plate as claimed in claim 1 is characterized in that, described substrate is dielectric substrate or the conductive substrates that is coated with dielectric layer.
4. mask plate as claimed in claim 1 is characterized in that, described thin grid are trapezoidal.
5. mask plate as claimed in claim 1 is characterized in that, on two left hand corner in described each space a rectangular label is arranged respectively, and the length L of described rectangular label satisfies: 0.05mm＜L＜1mm, width W satisfies: 0.05mm＜W＜1mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102837667A CN101937948B (en) | 2010-09-16 | 2010-09-16 | Mask plate for preparing receiver of light-gathering film battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102837667A CN101937948B (en) | 2010-09-16 | 2010-09-16 | Mask plate for preparing receiver of light-gathering film battery |
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| CN101937948A true CN101937948A (en) | 2011-01-05 |
| CN101937948B CN101937948B (en) | 2012-02-01 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102201477A (en) * | 2011-05-13 | 2011-09-28 | 厦门大学 | Solar concentrating method and device based on periodic microstructure |
| CN102270671A (en) * | 2011-08-31 | 2011-12-07 | 无锡赛晶太阳能有限公司 | Back electrode structure of silicon solar cell |
| CN102983208A (en) * | 2011-09-07 | 2013-03-20 | 安科太阳能公司 | Grid design used for III-V compound semiconductor cell |
| CN104011877A (en) * | 2011-12-21 | 2014-08-27 | 陶氏环球技术有限责任公司 | Improved method of producing two or more thin film-based interconnected photovoltaic cells |
| CN104269464A (en) * | 2014-09-29 | 2015-01-07 | 天威新能源控股有限公司 | Novel solar battery ultra-fine electrode preparation method |
| CN110311014A (en) * | 2019-07-08 | 2019-10-08 | 绵阳金能移动能源有限公司 | A method of reducing flexible copper indium gallium selenide solar cell series connection resistance |
| CN111244211A (en) * | 2018-11-29 | 2020-06-05 | 中国科学院大连化学物理研究所 | Airship photovoltaic material device integrated structure and preparation method |
| CN113113503A (en) * | 2019-12-24 | 2021-07-13 | 中国建材国际工程集团有限公司 | Copper indium gallium selenide thin-film solar cell module and preparation method thereof |
| CN115148852A (en) * | 2022-06-30 | 2022-10-04 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
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| CN111244211A (en) * | 2018-11-29 | 2020-06-05 | 中国科学院大连化学物理研究所 | Airship photovoltaic material device integrated structure and preparation method |
| CN110311014A (en) * | 2019-07-08 | 2019-10-08 | 绵阳金能移动能源有限公司 | A method of reducing flexible copper indium gallium selenide solar cell series connection resistance |
| CN110311014B (en) * | 2019-07-08 | 2020-11-24 | 绵阳金能移动能源有限公司 | Method for reducing series resistance of flexible copper indium gallium selenide solar cell |
| CN113113503A (en) * | 2019-12-24 | 2021-07-13 | 中国建材国际工程集团有限公司 | Copper indium gallium selenide thin-film solar cell module and preparation method thereof |
| CN115148852A (en) * | 2022-06-30 | 2022-10-04 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
| CN115148852B (en) * | 2022-06-30 | 2024-01-26 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
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| CN101937948B (en) | 2012-02-01 |
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