CN104269464B - Novel solar battery ultra-fine electrode preparation method - Google Patents
Novel solar battery ultra-fine electrode preparation method Download PDFInfo
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- CN104269464B CN104269464B CN201410512291.2A CN201410512291A CN104269464B CN 104269464 B CN104269464 B CN 104269464B CN 201410512291 A CN201410512291 A CN 201410512291A CN 104269464 B CN104269464 B CN 104269464B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 239000007769 metal material Substances 0.000 claims abstract description 7
- 210000004027 cell Anatomy 0.000 claims description 79
- 239000002002 slurry Substances 0.000 claims description 47
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 7
- 239000002322 conducting polymer Substances 0.000 claims description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 229920000767 polyaniline Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 claims 1
- 229920000069 polyphenylene sulfide Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 210000004911 serous fluid Anatomy 0.000 abstract 5
- 230000003068 static effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 239000002105 nanoparticle Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to an electrode preparation method, in particular to a novel solar battery ultra-fine electrode preparation method. The method comprises the steps that (1) conductive nano-metallic materials and an organic solvent are mixed to form conductive serous fluid; (2) the conductive serous fluid is poured into a device with a nozzle, and a mask is placed on the surface of a solar battery; (3) high voltage static is added between the nozzle and the surface of the solar battery before the conductive serous fluid is sprayed, and then the conductive serous fluid is sprayed to the mask; (4) after the mask is taken off from the surface of the solar battery, the conductive serous fluid attached to the surface of the solar battery is sintered, and therefore a solar battery ultra-fine electrode is formed. The novel solar battery ultra-fine electrode preparation method has the advantages that the operating process is simple, the electrode shape and distribution are controllable, the production cost is reduced, and the photoelectric conversion efficiency is improved.
Description
Technical field
The present invention relates to a kind of preparation method of electrode, specifically refer to a kind of preparation of the ultra-fine electrode of new solar cell
Method.
Background technology
In recent years, polycrystalline silicon solar cell market competition is growing more intense, and improves photoelectric conversion efficiency of the solar battery, reduces too
Positive electricity pond production cost becomes one of emphasis of current photovoltaic industry concern.
In prior art, conventional polycrystalline silicon solar cell electrode preparation adopt method for printing screen, more sintered technique with
Battery forms good Ohmic contact, thus forming solar cell front electrode.The solar cell front electricity that the method is prepared
The cost of pole accounts for more than the 15% of overall manufacturing cost, and because serigraphy silver paste consumption is subject to half tone parameter, slurry viscosity shadow
Sound is larger, and silver paste consumption hardly results in effective control, limits the development further of polycrystalline silicon solar cell production, reduces many
The market competitiveness in photovoltaic industry for the crystal silicon solar battery manufacturing enterprise.
In order to improve the electricity conversion of solar cell further, lift the aesthetic property of solar cell simultaneously, provide one
The solar cell front electrode planting reduction production cost is imperative.Therefore, the research of ultra-fine solar cell front electrode causes
People widely pay close attention to.
Content of the invention
It is an object of the invention to solving the technical barrier of ultra-fine solar cell front electrode preparation, provide a kind of realization super
Thin electrode shape and distribution controllability, reduce solar cell production cost simultaneously, improve the opto-electronic conversion of polycrystalline silicon solar cell
The preparation method of the ultra-fine electrode of new solar cell of efficiency.
The present invention is achieved through the following technical solutions：
A kind of preparation method of the ultra-fine electrode of new solar cell, comprises the following steps：
（1）Electrical-conductive nanometer metal material and organic solvent are mixed to form conductive slurries；
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface；
（3）Before the conductive slurries of injection, add high pressure between shower nozzle and solar cell surface electrostatic, then again by conductive paste
Liquid is ejected on mask；
（4）By mask after solar cell surface is taken off, the conductive slurries of attachment in solar cell surface are carried out
Sintering, that is, make the ultra-fine electrode of solar cell.
In the present invention, this mask has the pierced pattern consistent with circuit, mask is covered in solar cell surface
On, then by the effect of high-pressure electrostatic, effectively conductive slurries are sprayed at the pierced pattern of mask in solar cell surface,
The ultra-fine electrode of solar cell is can be made into after conductive slurries at this mask pierced pattern are sintered；The method of the present invention is not led
The restriction of plasma-based fluid viscosity, operation is easier.
The present invention by adjusting the size at pierced pattern and pattern on mask, and then can form different size, shape
The ultra-fine electrode of solar cell, realizes the controllability of ultra-fine electrode shape and distribution.And because the hydrophily of mask is very high, thus lead
Plasma-based liquid is hardly bonded on mask, thus remains in the recyclable recycling of conductive slurries on mask, saves and produces into
This.
By the method for the present invention, the width producing electrode the most carefully can reach nanoscale, even up to arrives 10nm, effect
Very notable.
Further, step（1）In also include conducting polymer composite, described conducting polymer composite is polypyrrole, poly-
Diphenyl sulfide, poly- phthalocyanine-like compound, polyaniline, polythiophene or Graphene.Conducting polymer composite refers to that a class has conductive work(
Energy（Including semiconduction, metallic conductivity and superconductivity）And electrical conductivity is in the polymeric material of more than 10-6S/m.As
Excellent set-up mode, step in the present invention（1）Described in conducting polymer composite be Graphene.
As a kind of preferred, step（2）Described in mask material be PET, PMMA or PDMS.Wherein, PET refer to poly- right
PET, PMMA refers to polymethyl methacrylate, and PDMS refers to dimethyl silicone polymer.
As another kind of preferred, step（1）Described in electrical-conductive nanometer metal material be selected from nm of gold, Nano Silver, nanometer
Copper and nano aluminum.Described electrical-conductive nanometer metal material is powder.
For cost-effective further, described step（4）After middle mask takes off, not only on mask residual conductive slurries
Recoverable, reclaims the mask after conductive slurries and also can be recycled.
The present invention compared with prior art, has advantages below and beneficial effect：
1st, ultra-fine solar cell front electrode can effectively be produced by the method for the present invention, this ultra-fine electrode can effectively subtract
The masking to sunshine for the low electrode, improves the absorption to sunshine for the solar cell, thus improving photoelectric transformation efficiency；Same with this
When, the ultra-fine front electrode of solar cell increases the aesthetic property of solar cell, adapts to following development need of photovoltaic industry.
2, the invention provides a kind of preparation method of the ultra-fine electrode of new solar cell, not only operate very simple, raw
Produce qualification rate high；And also reduce in solar cell production process the loss of conductive slurries, reduce production cost.
Specific embodiment
With reference to embodiment, the present invention is described in further detail, but embodiments of the present invention not limited to this.
Embodiment 1
（1）The configuration of conductive slurries
After powdered nanoparticles silver is mixed with organic solvent, form conductive slurries.
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface, this mask has
There is the pierced pattern consistent with circuit.
（3）Add a high-pressure electrostatic between shower nozzle and solar cell surface, conductive slurries spray from shower nozzle, make in electrostatic
With under, conductive slurries are collected at pierced pattern on the mask of solar battery surface.
（4）After the completion of spraying, mask is taken off from solar cell surface, then by solar cell surface attachment lead
Plasma-based liquid makes the ultra-fine electrode of solar cell after being sintered.
In the present embodiment, solar cell surface is placed PDMS mask, and mask is mesh shape, the sun electricity made
The ultra-fine electrode width in pond is 20um.
Embodiment 2
（1）The configuration of conductive slurries
After powdered nanoparticles silver is mixed with organic solvent, form conductive slurries.
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface, this mask has
There is the pierced pattern consistent with circuit.
（3）Add a high-pressure electrostatic between shower nozzle and solar cell surface, conductive slurries spray from shower nozzle, make in electrostatic
With under, conductive slurries are collected at pierced pattern on the mask of solar battery surface.
（4）After the completion of spraying, mask is taken off from solar cell surface, then by solar cell surface attachment lead
Plasma-based liquid makes the ultra-fine electrode of solar cell after being sintered.
In the present embodiment, solar cell surface is placed PMMA mask, and mask is mesh shape, the sun electricity made
The ultra-fine electrode width in pond is 20um.
Embodiment 3
（1）The configuration of conductive slurries
After powdered nanoparticles gold is mixed with organic solvent and Graphene, form conductive slurries.
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface, this mask has
There is the pierced pattern consistent with circuit.
（3）Add a high-pressure electrostatic between shower nozzle and solar cell surface, conductive slurries spray from shower nozzle, make in electrostatic
With under, conductive slurries are collected at pierced pattern on the mask of solar battery surface.
（4）After the completion of spraying, mask is taken off from solar cell surface, then by solar cell surface attachment lead
Plasma-based liquid makes the ultra-fine electrode of solar cell after being sintered.
In the present embodiment, solar cell surface is placed PET mask, and mask is mesh shape, the solar cell made
Ultra-fine electrode width is 50nm.
Embodiment 4
（1）The configuration of conductive slurries
After powdered nanoparticles copper is mixed with organic solvent and polypyrrole, form conductive slurries.
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface, this mask has
There is the pierced pattern consistent with circuit.
（3）Add a high-pressure electrostatic between shower nozzle and solar cell surface, conductive slurries spray from shower nozzle, make in electrostatic
With under, conductive slurries are collected at pierced pattern on the mask of solar battery surface.
（4）After the completion of spraying, mask is taken off from solar cell surface, then by solar cell surface attachment lead
Plasma-based liquid makes the ultra-fine electrode of solar cell after being sintered.
In the present embodiment, solar cell surface is placed PET mask, and mask shape is mesh shape, the sun made
The ultra-fine electrode width of battery is 40um.
Embodiment 5
（1）The configuration of conductive slurries
After powdered nanoparticles silver is mixed with organic solvent and Graphene, form conductive slurries.
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface, this mask has
There is the pierced pattern consistent with circuit.
（3）Add a high-pressure electrostatic between shower nozzle and solar cell surface, conductive slurries spray from shower nozzle, make in electrostatic
With under, conductive slurries are collected at pierced pattern on the mask of solar battery surface.
（4）After the completion of spraying, mask is taken off from solar cell surface, then by solar cell surface attachment lead
Plasma-based liquid makes the ultra-fine electrode of solar cell after being sintered.
In the present embodiment, solar cell surface is placed PDMS mask, and mask shape is mesh shape, makes too
The ultra-fine electrode width in positive electricity pond is 50um.
Embodiment 6
（1）The configuration of conductive slurries
After powdered nanoparticles silver and nano aluminum are mixed with organic solvent and Graphene, form conductive slurries.
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface, this mask has
There is the pierced pattern consistent with circuit.
（3）Add a high-pressure electrostatic between shower nozzle and solar cell surface, conductive slurries spray from shower nozzle, make in electrostatic
With under, conductive slurries are collected at pierced pattern on the mask of solar battery surface.
（4）After the completion of spraying, mask is taken off from solar cell surface, then by solar cell surface attachment lead
Plasma-based liquid makes the ultra-fine electrode of solar cell after being sintered.
In the present embodiment, solar cell surface is placed PMMA mask, and mask shape is mesh shape, makes too
The ultra-fine electrode width in positive electricity pond is 5um.
Above-described embodiment is only the preferred embodiments of the present invention, not limiting the scope of the invention, as long as adopting
The design principle of the present invention, and the change carrying out non-creativeness work on this basis and making, all should belong to the present invention's
Within protection domain.
Claims (6)
1. a kind of preparation method of the ultra-fine electrode of new solar cell is it is characterised in that comprise the following steps：
（1）Electrical-conductive nanometer metal material and organic solvent are mixed to form conductive slurries；
（2）Conductive slurries are loaded in the device with shower nozzle, and places mask in solar cell surface；
（3）Before the conductive slurries of injection, add high pressure between shower nozzle and solar cell surface electrostatic, then sprays conductive slurries again
It is mapped on mask；
（4）By mask after solar cell surface is taken off, the conductive slurries of attachment in solar cell surface are sintered,
Make the ultra-fine electrode of solar cell；
Step（1）In also include conducting polymer composite；Step（1）Described in electrical-conductive nanometer metal material be selected from nm of gold,
Nano Silver, Nanometer Copper and nano aluminum.
2. a kind of ultra-fine electrode of new solar cell according to claim 1 preparation method it is characterised in that：Described
Conducting polymer composite is polypyrrole, polyphenylene sulfide, poly- phthalocyanine-like compound, polyaniline, polythiophene or Graphene.
3. a kind of ultra-fine electrode of new solar cell according to claim 1 preparation method it is characterised in that：Step
（1）Described in conducting polymer composite be Graphene.
4. a kind of ultra-fine electrode of new solar cell according to claim 1 preparation method it is characterised in that：Step
（2）Described in mask be PET, PMMA or PDMS.
5. the preparation method of the ultra-fine electrode of a kind of new solar cell according to any one of Claims 1 to 4, its feature exists
In：Described electrical-conductive nanometer metal material is powder.
6. a kind of ultra-fine electrode of new solar cell according to claim 5 preparation method it is characterised in that：Described step
Suddenly（4）After middle mask takes off, after first the conductive slurries of residual on mask being reclaimed, then mask is recycled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410512291.2A CN104269464B (en) | 2014-09-29 | 2014-09-29 | Novel solar battery ultra-fine electrode preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410512291.2A CN104269464B (en) | 2014-09-29 | 2014-09-29 | Novel solar battery ultra-fine electrode preparation method |
Publications (2)
| Publication Number | Publication Date |
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| CN104269464A CN104269464A (en) | 2015-01-07 |
| CN104269464B true CN104269464B (en) | 2017-02-15 |
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| CN201410512291.2A Expired - Fee Related CN104269464B (en) | 2014-09-29 | 2014-09-29 | Novel solar battery ultra-fine electrode preparation method |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107452817B (en) * | 2017-08-07 | 2019-01-18 | 苏州赛万玉山智能科技有限公司 | The disposable metal method and system of waveform solar silicon wafers |
| CN111509085A (en) * | 2020-04-02 | 2020-08-07 | 西安宏星电子浆料科技股份有限公司 | Spraying system for preparing ultra-high-efficiency solar cell electrode and application thereof |
| CN113555452B (en) * | 2020-04-26 | 2024-03-15 | 隆基绿能科技股份有限公司 | Solar cell metal electrode and preparation method thereof |
| CN113793883B (en) * | 2021-09-07 | 2024-02-23 | 苏州诺菲纳米科技有限公司 | Preparation method of solar cell electrode |
| CN115805177A (en) * | 2022-11-23 | 2023-03-17 | 宣城海螺建筑光伏科技有限公司 | Method for reducing blackening of BIPV chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076452A (en) * | 2005-11-28 | 2007-11-21 | 三菱电机株式会社 | Printing mask and solar cell, and flat panel display and chip capacitor |
| CN101937948A (en) * | 2010-09-16 | 2011-01-05 | 普尼太阳能(杭州)有限公司 | Mask plate for preparing receiver of light-gathering film battery |
| CN103579418A (en) * | 2013-11-08 | 2014-02-12 | 中电电气（扬州）光伏有限公司 | Back contact forming method of passivated emitter and rear contact solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007058972A1 (en) * | 2007-12-07 | 2009-07-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for metallization of solar cells, hotmelt aerosol ink and aerosol jet printing system |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076452A (en) * | 2005-11-28 | 2007-11-21 | 三菱电机株式会社 | Printing mask and solar cell, and flat panel display and chip capacitor |
| CN101937948A (en) * | 2010-09-16 | 2011-01-05 | 普尼太阳能(杭州)有限公司 | Mask plate for preparing receiver of light-gathering film battery |
| CN103579418A (en) * | 2013-11-08 | 2014-02-12 | 中电电气（扬州）光伏有限公司 | Back contact forming method of passivated emitter and rear contact solar cell |
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| CN104269464A (en) | 2015-01-07 |
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