CN104282802A - Solar cell module with sub-cells connected in series and manufacturing method thereof - Google Patents
Solar cell module with sub-cells connected in series and manufacturing method thereof Download PDFInfo
- Publication number
- CN104282802A CN104282802A CN201310449370.9A CN201310449370A CN104282802A CN 104282802 A CN104282802 A CN 104282802A CN 201310449370 A CN201310449370 A CN 201310449370A CN 104282802 A CN104282802 A CN 104282802A
- Authority
- CN
- China
- Prior art keywords
- sub
- battery
- solar cell
- cell module
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000005520 cutting process Methods 0.000 claims description 25
- 230000000694 effects Effects 0.000 claims description 24
- 239000012528 membrane Substances 0.000 claims description 23
- 210000001142 back Anatomy 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 239000005357 flat glass Substances 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 32
- 238000005530 etching Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 83
- 238000013461 design Methods 0.000 description 13
- 230000008859 change Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 238000003466 welding Methods 0.000 description 10
- 238000010248 power generation Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000013439 planning Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012913 prioritisation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell module with sub-cells connected in series and a manufacturing method of the solar cell module. The technical problems that the number of sub-cells is limited and the output voltage obtained through series connection is limited are solved. According to the technical scheme, the method is implemented on the basis of the manufacturing process of the solar cell module. The method includes the steps that a conductive thin film layer is deposited on a glass substrate, a photovoltaic absorbing layer is etched and deposited, a back electrode layer is etched and deposited, and the module with the sub-cells connected in series is formed in an etched mode. According to the etching mode of the conductive thin film layer, etching lines intersect with one another in the transverse direction and longitudinal direction of the glass substrate so that the conductive thin film layer can be cut, the cut conductive thin film layers form independent conductive modules through transverse grooves and longitudinal grooves, the independent conductive modules are arranged in sequence, every two adjacent rows of independent conductive modules at the ends are connected end to end so that a front electrode conductive strip arranged in the shape of S can be formed, and the photovoltaic absorbing layer and the back electrode layer are etched according to the shape of each front electrode conductive strip so that the sub-cell module with the sub-cells connected in series can be formed.
Description
Technical field
The present invention relates to a kind of solar cell module preparation technology, belong to thin-film solar cells and manufacture the solar cell module in field, particularly a kind of how sub-serial battery and preparation method thereof.
Background technology
Along with making constant progress of the mankind, energy resource consumption is increasing, and traditional energy is constantly consumed rapidly.Solar energy is renewable cleaning new energy, and reserves are huge, from for a long time, most possibly substitutes traditional energy.And when utilizing solar cell power generation, the voltage of monoblock battery is difficult to do greatly, output current is comparatively large, and the heat producing losses of battery itself and transfer wire is comparatively large, and a large amount of energy is consumption among transmission; And when being connected into photovoltaic array and generating electricity, the hot spot effect of sporadic percentage of batteries sheet, will inevitably cause the situations such as adverse current heating, affect the generating gross efficiency of battery.
Be described with the technological process making non-crystal silicon thin-film solar cell component now, processing step is as follows:
----cleaning 2--PECVD deposits P-I-N layer, and--------P4 scribing is played a minor role--cleans 3--ultra-sonic welded and draws/convergent belt--superimposed PVB and back of the body glass--roll-in--autoclave--deburring--bonding terminal box--emulation testing--packaging warehouse-in to P3 laser scribing dorsum electrode layer to Sputter sputter back electrode to P2 laser scribing P-I-N layer to cleaning 1--P1 laser scribing tco layer to TCO base plate glass material loading.
According to above-mentioned technological process, we know, if do not have the impact of " drainage strip " and " busbar ", the sub-cell shapes of hull cell and being interconnected coordinates determined by the path of laser scribing P1, P2 and P3 and mutual alignment relation.
Be used maximum laser scribing carving methods at present, sub-battery can be made to be together in series in the length of cell panel or Width one by one (see figure 1) with " long fillet " shape; Because the length and width of cell panel are limited, sub-battery can not do " too narrow " again, and the factor such as width dimensions, positional precision of laser scribing itself limits the increase of sub-number of batteries, thus limits the output voltage size of thin-film solar cells.
Summary of the invention
The technical problem to be solved in the present invention is: existing solar cell module is by the restriction-namely originally with the sub-battery block that " long fillet " shape is connected of inner " sub-battery " syndeton, even if connect one by one along " narrow limit " on series connection direction, also overall length can be subject to, fillet can not be too narrow, the technical problem that the output voltage that the restriction of the factors such as the width of laser scoring own and scribing positional precision-cause the sub-number of batteries can including series connection in limited and connecting obtains is limited, devise solar cell module of a kind of how sub-serial battery and preparation method thereof, by changing existing solar cell module delineation mode, solve in solar cell module can seal in sub-battery and voltage limited, and the technical problem that hot spot effect can not be effectively controlled.
The present invention is the technical scheme realizing goal of the invention employing: improve solar cell module series voltage and effective method reducing hot spot effect, described method realizes on solar cell module preparation technology basis, depositing electrically conductive thin layer on base plate glass is included in and scribing in described method step, depositing photovoltaic absorbed layer scribing, deposit dorsum electrode layer and scribing formation sub-series battery modules, its key is: the delineation mode of described conductive membrane layer is: score line is along the lateral orientation of base plate glass and the cutting of longitudinal azimuth crossings, conductive membrane layer after cutting forms by lateral trench and longitudinal groove the separate conductive module be arranged in order, and the separate conductive module of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges, the sub-battery modules that delineation carries out scribing according to the shape of front electrodes conduct bar respectively, formation " snakelike " is connected of described photovoltaic absorption layer and dorsum electrode layer.
Key idea of the present invention is: the invention provides a kind of thinking, mainly refers to make solar cell in limited area, is divided out more sub-battery, and makes its effective arranged in series, thus obtain twice, the output voltage of three times even higher; Under this high voltage, the electrical property advantage that high voltage just has can be realized with comparalive ease; Under the thin film solar cell sheet of limited areal needs to export more high-tension situation, recommend to adopt; When being applied to cell power generation array, onesize voltage be produced, can obtain with the cell piece series connection of less amount, and simultaneously in order to obtain certain power, can select to organize parallel connection more; Cell piece output voltage is high, and the magnitude of current flowing through battery is little, and the caloric value of such transmission line also can be little.
Utilize the present invention, if do not increase the making of high conductivity silver/aluminium thin layer before P1 scribing, just can complete the making of thin-film solar cells CELL section on existing equipment and process basis, substantially not need additionally to increase equipment or raw material; The mode of recommending is increase high conductivity silver/aluminium thin layer, and the equipment of required increase and raw material are also few, can complete by little cost.
The present invention, in production technology, need set up welding bypass diode and lead-out wire operation, but eliminate the welding of busbar and drainage strip, and technique is tending towards simplifying; Diode can be included in circuit more neatly, and choosing of its number, specification must be determined according to the concrete parameter attribute value of cell piece; Being connected into of diode can make monoblock battery have special performance, can resist the problems such as hot spot effect better.
When being applied to cell power generation array, onesize voltage be produced, can obtain with the cell piece series connection of less amount, needing polylith to connect compared to conventional voltage cell piece and just can obtain the advantage that high voltage has syndeton; The photovoltaic array of the pure parallel connection of cell piece wherein the unusual condition such as part cell piece generation hot spot effect time, total peak output voltage can not change, and by sealing in the diode of output, protect the situation that the impossible back current of whole electricity generation system generates heat, system effectiveness significantly decays; And the output current of photovoltaic array can be controlled conveniently by increase and decrease parallel-connected blocks/group number; And simultaneously in order to obtain certain power, cell parallel can be selected flexibly.
The present invention is in thin-film solar cells and photovoltaic power generation array field, all devise a new form, in the variation of battery, the aspects such as the lifting of the lifting of photovoltaic array circuit optimization, generating voltage reliability, power transmission line thermal losses, generated energy service efficiency, all have the advantage that it is special.
Below in conjunction with accompanying drawing, the present invention is described in detail.
Accompanying drawing explanation
Fig. 1 is existing solar cell modular structure.
Fig. 2 is structural representation (sticking on high conductivity silver/aluminium thin layer) after conductive membrane layer scribing in the present invention.
Fig. 3 is structural representation after photovoltaic absorption layer scribing in the present invention.
Fig. 4 is the structural representation of the sub-series battery modules formed after dorsum electrode layer scribing in the present invention.
Fig. 5 is the equivalent circuit diagram after setting up bypass diode in the sub-series battery modules in Fig. 4.
In accompanying drawing, 1 is base plate glass, 2 is conductive membrane layers, 21 represent the separate conductive module that adjacent two arrange terminations, and 3 is photovoltaic absorption layers, and 4 is dorsum electrode layers, 5 is adjacent two sub-batteries arranging terminations, D1, D2 represent bypass diode, and represented by dotted arrows P2 laser scribing off center baseline in Fig. 3, in Fig. 4, arrow represents the current trend of solar cell module.
Embodiment
Improve solar cell module series voltage and effective method reducing hot spot effect, described method realizes on solar cell module preparation technology basis, depositing electrically conductive thin layer 2 on base plate glass 1 is included in and scribing in described method step, depositing photovoltaic absorbed layer 3 is scribing also, deposition dorsum electrode layer 4 also scribing forms sub-series battery modules, its key is: the delineation mode of described conductive membrane layer 2 is: score line is along the lateral orientation of base plate glass 1 and the cutting of longitudinal azimuth crossings, conductive membrane layer 2 after cutting forms the separate conductive module be arranged in order by lateral trench P11 and longitudinal groove P12, and the separate conductive module 21 of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges, the sub-battery modules that delineation carries out scribing according to the shape of front electrodes conduct bar respectively, formation " snakelike " is connected of described photovoltaic absorption layer 3 and dorsum electrode layer 4.
The connected mode that the separate conductive module 21 of described adjacent two row terminations is end to end comprises: the body of two pieces of separate conductive modules is in one-piece connection or connects by electric conducting material.
Adjacent two row terminations separate conductive module 21 on set up high conductivity silver/copper/aluminium thin layer, the conductance of described silver/copper/aluminium thin layer respectively: silver is 0.0159(Ω mm
2/ m), copper is 0.0167(Ω mm
2/ m), aluminium is 0.02635(Ω mm
2/ m).
A kind of solar cell module of how sub-serial battery, structure sheaf comprises base plate glass 1, conductive membrane layer 2, photovoltaic absorption layer 3, dorsum electrode layer 4, its key is: the structure of described solar cell module comprises at least two row's sub-series batteries, the conductive membrane layer 2 of the sub-battery 5 of adjacent two row terminations joins end to end, and forms " snakelike " sub-series battery modules.
Sub-cell shapes in described solar cell module is rectangle or square or triangle or hexagon.
Be equipped with high conductivity silver/copper/aluminium thin layer between the conductive membrane layer 2 of sub-battery 5 of described adjacent two row terminations and photovoltaic absorption layer, the conductance of described silver/copper/aluminium thin layer respectively: silver is 0.0159(Ω mm
2/ m), copper is 0.0167(Ω mm
2/ m), aluminium is 0.02635(Ω mm
2/ m).
Bypass diode D1, D2 is set up between the circuit of the adjacent row in interval or the above sub-series battery of a row.
The present invention manufactures field in thin-film solar cells, by the planning again of laser scribing process and design, processes a kind of thin-film solar cells of novel sub-battery arrangement structure.The object of this arrangement architecture builds the thin-film solar cell panel having more how sub-serial battery and connect: such as, on hull cell plate, all sub-batteries can get up by certain paths in series; Or partly parallel connection is then together in series by group again in groups according to certain rules; Sub-number of battery cells is more, and the radix that can for be connected in series is also larger.The feature of this new structure battery is: output voltage is high, output current is little; Recommend to adopt under the cell piece of limited areal needs to export more high-tension situation; When being applied to cell power generation array, required high voltage can being obtained with the series connection of less cell piece, there is compared to conventional batteries sheet the advantage of syndeton; Electric current is little, and the caloric value of transmission line also can be less.
The present invention is the thin-film solar cells designing a kind of novel sub-battery arrangement structure; By this design, for the thin film solar cell sheet of same area, " sub-battery " or " sub-battery pack " series connection of more more number can be realized; This series connection is not only original series connection on cell panel " length " direction, and can add up to add series connection on cell panel " width " direction.
The redesign of laser scribing process in the present invention is not unalterable or require harsh scribing track, but can have a variety of track, pattern; As long as can realize " circuit cooperation " for tco layer, battery layers and dorsum electrode layer in technical process, the series connection of the sub-battery of the various shape of this thin-film solar cells or the number to a greater extent of sub-battery pack just can be realized.In view of the diversity of above-mentioned scribing track, this patent only describes " square " sub-serial battery one example in detail at this; Can be extended out, the sub-cell shapes of other series connection shape can be equilateral triangle, regular hexagon etc., provides reference at this.
In the present invention, how sub-serial battery structure can be suitable for for the solar cell of nearly all " film " structure; Be not only applicable to the single-unit thin-film solar cells such as " amorphous silicon ", " microcrystal silicon ", " cadmium telluride ", and be applicable to the double-junction solar batteries such as " amorphous-crystallite " " amorphous germanium silicon ", even film composite type multi-knot thin film solar cell; As long as the corresponding relationship consistency of front electrode, back electrode and battery layers, just goes for the application of how sub-serial battery.
For above-described novel thin film solar battery structure, in order to obtain more satisfactory electrical property and efficiency, not mating in the performance avoiding some to occur because of structural change, design parameter and technological parameter should there is corresponding matched design; For difform sub-serial battery new structure, the structural parameters matched have certain difference; General principle wishes that internal resistance is little as far as possible, and certain ad hoc structure may not be suitable for other structure, cannot treat different things as the same.
If by the generating of novel thin film solar battery sheet composition photovoltaic array, then in parameters coupling, should also need corresponding matching primitives to the diode of thin-film solar cells configuration.This patent proposes to mate theory as follows: if the output voltage of system requirements needs the battery in array, " series connection " just can obtain, then can consider the access carrying out bypass diode; If novel battery sheet output voltage is comparatively large, namely the output voltage of system requirements can be met under the connection of pure parallel connection, then can cancel bypass diode, and Diode series be entered output circuit, also can play the effect of protection system.
The present invention, due to its technique particularity, can save busbar and drainage strip, and corresponding operation can be saved; And the operation of required design alteration is welding bypass diode and lead-out wire.
As other thin-film solar cells, this square circuit design, subregion also will be had " should not to be used for generating electricity ", and this region is the bottleneck place of inside battery " conduction " just; Sticking on high connductivity film at this or locally add plating/deposition high connductivity layer is prioritization scheme.
In order to overcome the above problems, creatively design the brand-new performance parameter of thin-film solar cells, this patent proposes a kind of sub-battery connecting construction newly specially, namely by this syndeton, for the thin film solar cell sheet of same area, energy scribing is partitioned into the sub-battery of more more number, and makes these " sub-batteries " or " sub-battery pack " realize series connection; The effect of such series connection to allow thin-film solar cells obtain larger output voltage values.
In order to realize the arrangement architecture of this novel sub-battery, we are on current mature thin-film solar cells production technology basis, need the technique such as layout, path, line style parameter redesigning laser scribing P1, P2 and P3 tri-laser scribings, and the change along with cell panel inner connecting structure needs to cancel drainage strip and busbar and technique thereof, increase the welding procedure of diode and lead-out wire, be achieved to make new structure.And, here also for we providing a thinking: if the process datas such as the layout of three laser scribings, path, line style parameter, mutual alignment relation can before hull cell electrode, back electrode and intermediate cell layer geometry in, play the association cooperatively interacted, so thin-film solar cells just can have a variety of cutting method, the pattern of the different shape of many types can be cut out, as equilateral triangle, regular hexagon etc.
The Optimization Technology of recommendations for selection: stick on/add plating/deposition high connductivity thin layer on the tco layer of non-power generation area.Novel syndeton has certain not enough, and due to the particularity that circuit connects, not each block battery has all been connected in circuit, and some specific region can not participate in generating; Be not used at several places of this new structural design the region generated electricity, sticking on, add the metal film layer of plating or deposition high conductivity, effectively can help improve the bottleneck problem that tco layer conductive capability that this project organization must solve is limited.
Finally, due to the change of FEOL, must be there is corresponding change in the module set section technique being adapted to this new internal syndeton: cancel busbar and drainage strip, terminal box is no longer necessary configuration, then can set up the welding access technique of diode and the welding access technique of output lead-in wire by design parameter.
The present invention, the cooperation that a variety of shape can be had can to realize between layers is connected, again due to the not equal factor of the sub-battery of various shape, trend, detailed laser scribing process processing procedure is difficult to all be described in this article, therefore only selects the thin-film solar cells of most representational " short fillet is square " sub-battery to introduce.
First, referring to Fig. 4, the thin-film electro pond battery connecting construction model of new proposition: " the unidirectional series connection " that be no longer the sub-battery of " long fillet " shape cutting in Fig. 1 prior art, but the sub-battery of each block length fillet is equidistantly cut open along the direction of its length, to obtain more less " sub-battery ".For the ease of analyzing, the sub-battery numbering that we give these less, compiles 1,2,3 from left to right successively ... N, N are rightmost battery, add subscript 1,2,3 successively from the bottom up to it ... M, namely " NM " is the most top-right sub-battery; Because this design should based on the on all four prerequisite of size of every sub-battery, we can think simply, and the sub-battery of a block length fillet " N " becomes " parallel connection " of several " short fillet " sub-batteries " N1, N2 ... NM " after dicing; Then the sub-battery pack of these " parallel connections ", then connect from left to right along with " 1,2 ... N "; Because these equidistant cuttings can just excise 35 ~ 80 μm, a very little width, the loss of battery itself is little, substantially negligible, and itself and initial cell panel do not vary widely on electrical property.Change the trend of " even number line " sub-battery, make its cascading effect be electric current from right to left; And make the conductive membrane layer 2 of rightmost one piece of sub-cell area of " odd-numbered line " to " even number line " connect (namely scribing is not broken); The conductive membrane layer 2 of Far Left one piece of sub-cell area of " even number line " to " odd-numbered line " is made to connect; Change like this, the electrical connection of sub-battery has just become " 11 → 21 →... ... → N1 → N2 →... ... 22 → 12 → 13 → 23 ... → NM ".With simple mathematical analysis, all " the sub-battery of short fillet " be made all to be sealed in: make M get odd number, then last block is NM by the sub-battery sealed in; And making M get even number, then last block is 1M by the sub-battery sealed in; The reason so distinguished is, can arrange the position of the electric current lead-out wire of battery more easily.
On this basis, concrete technology step of the present invention comprises:
A. see Fig. 2, depositing electrically conductive thin layer 2 on base plate glass 1 also carries out P1 scribing: the cutting namely starting to introduce lateral orientation in P1 scribing, the cutting in longitudinal orientation is continuous and runs through whole, and the cutting of lateral orientation will retain " locally " and will not scratch, this local will be novel sub-battery connecting construction " tie "; Through P1 scribing, conductive membrane layer 2 has been divided into the separate conductive module region of N × M; But " N1, N2 " " 21,31 " ... between sub-battery will not scratch, allow electric current turn to here; For the high connductivity thin layer sticking on/add plating/deposition, if this layer itself is as drainage strip, strip and continuous print, it also needs to be opened by scribing in P1 scribing, becomes with the same partial structurtes of conductive membrane layer 2 connection status; Why think that it should be cut when P1 scribing to open, be because P1 scribing laser used is ruddiness, have reasonable cutting effect to conductive membrane layer 2, for the high connductivity layer similar with conductive membrane layer 2 composition, ought to also be suitable for bearing cutting task; If not, high connductivity layer just need " mechanical type " scribing cut come, or be initially " one section one section " stick on;
B. see Fig. 3, depositing photovoltaic absorbed layer 2 also carries out P2 scribing: the circuit of P2 scribing is more complicated, and the parameter of needs setting also can be many, and its basic principle is: the both sides attending by P1, apart from P1 line short distance skew, locally becomes section scribing; In the sub-cell row of odd number, offset on the right side of P1, in the sub-cell row of even number, offset on the left of P1; After P2 laterally offset, scribing section the whole story position we be defined as " P2 off center baseline ", dorsum electrode layer and battery layers will centrally be scratched by baseline by follow-up P3 in the lump; Through P2 scribing, battery layers leaves a section discontinuous indentation;
C. see Fig. 4, deposition dorsum electrode layer 4 also carries out P3 scribing; P3 scribing is a ring the most complicated, act on battery layers and dorsum electrode layer, not only to need on the basis of P2 narrow spacing once again left liftoff/right avertence moves, discontinuous piecewise cuts out " partition " between sub-battery, and needs laterally to scratch between cell row and row completely along " P2 off center baseline "; Because its cutting path is similar with P2, this just using Fig. 4 as total effect complete figure draw, just can find out its principle with comparalive ease by the correlation comparison with Fig. 3.
Because the circuit structure of battery has a very large change, this change is complied with in follow-up change, and well designed goes out structure and the processing technology of whole battery.See Fig. 4, because the number of N and M can be arranged flexibly by design, the design so just without the need to connecting according to original straight line removes collected current from " two ends " of cell panel, and can be collected from local, even can " segmentation " collected current; Like this, only need at the sub-battery location of welding exit, perpendicular to current trend, lead-out wire " is spread out " along sub-cell widths direction and is welded on back electrode; So, just without the need to drainage strip and busbar and processing technology thereof, terminal box is also no longer necessary assembly; That is, weld lead-out wire and can substitute drainage strip effect, can as often as possible effectively collect and extracted current.
As this cascaded structure designs, the diode shielded, also can mate according to the specification of the unit for electrical property parameters of battery itself, diode itself and the sub-number of battery cells sealed in; Suppose that the parameter of the amorphous silicon thin-film solar cell that one piece of maturation process has been designed is: Vmpp=100V, Impp=1A, sub-number of battery cells is 150, and configuring a nominal current is the bypass diode of 5A; So as shown in Figure 4, might as well make M=8, the novel battery structural parameters obtained are as follows: Vmpp=800V, Impp=0.125A, and sub-number of battery cells is 1200; If now between sub-battery " 11 and 14 ", between " 15 and 18 " (wherein, 14 and 15 are actually iso-electric), be respectively oppositely incorporated to bypass diode D1 and D2; Then by simple circuit analysis, we know, occur if hot spot effect is not monoblock cell panel but locally occurs, D1 can effectively be alleviated " 11 → N1 → N2 → 12 → 13 →...→ 14 " this infringement descending the hot spot effect of half block battery to cause, the infringement that D2 then can prevent the hot spot effect going up half block battery in addition from causing; The connecting circuit figure of equivalence is see Fig. 5; For different NM planning and configuration, the different impacts of performance can also be obtained.
According to general knowledge, the probability of cell piece generation local hot spot effect should much smaller than the probability of entire plate hot spot; If according to upper example, the crest voltage of the novel thin film solar cell that we obtain is inherently higher, can when forming photovoltaic power generation array, not needing to carry out series connection can provide system output voltage, namely all adopts and is connected in parallel; If so now still arrange " bypass " diode in circuit system, meaning is little; But can by diode " series connection " on outlet line; Thus; diode is when cell piece normal power generation; do not hinder passing through of electric current, but when can not sending out electricity, cell piece can be protected because of hot spot effect or because of other infringement to a certain extent not damaged by the high voltage drive adverse current at two ends at cell panel.
The access of diode, should draft according to the parameter of battery and purposes, provide thinking and concept at this; As: be incorporated to during hot spot protection as bypass diode at needs, seal in when full electricity-generating circuit in parallel, can play a protective role.
Connection between sub-battery and lead-out wire and between diode, multiple welding manner can be had, prerequisite is the back electrode of sub-battery can not suffer in performance destruction because of welding, and welding can not make the thickness of monolithic films battery entirety or the change of large-size locally occurs; The mode of relatively recommending is ultrasonic bonding, and its action is gentleer, and good stability does not additionally increase material, does not have high-temperature heating also just need not for weld layer is destroyed by calcination and worry.
When needs with cell piece be linked to be photovoltaic system generate electricity time, can, by determining " M ", utilizing cell piece can accomplish high-tension feature, accomplishing system voltage with one piece of cell piece, then allowing all cell pieces be connected by parallel connection; Such benefit is, wherein during the unusual condition such as part cell piece generation hot spot effect, total peak output voltage can not change; Further, such parallel system, can be more stable when hot spot effect.
Diode can again mate and arrange, as long as be connected into correct, would not cause the situation that back current generates heat, system effectiveness significantly decays of whole electricity generation system because of the cell piece of these exceptions; Such as, as shown in Figure 4 at inside battery two bypass diodes in parallel, can play prevent battery local hot spot effect from causing preferably adverse current, heat waste effect; And if by the output of diode string in each block batteries in parallel connection, also can play a very good protection, namely the collocation of novel thin film solar cell and diode can have unique advantage.
Sum up the processing step that realizes of the present invention to comprise:
A. depositing electrically conductive thin layer 2 on base plate glass 1;
B.P1 laser scribing and cutting: laser is along the transverse direction of base plate glass 1 and longitudinal cross-cut TCO conductive membrane layer 2, TCO conductive membrane layer 2 after cutting forms the separate conductive module be arranged in order by lateral trench P11 and longitudinal groove P12, and the front electrodes conduct bar that the separate conductive module 21 of adjacent two row terminations is end to end, formation " snakelike " arranges;
C. depositing photovoltaic absorbed layer 3 on the TCO conductive membrane layer 2 after P1 laser scribing and cutting;
D.P2 laser scribing and cutting: the centerline parallel of the longitudinal groove P12 formed after laser rays and P1 the laser cutting of cutting photovoltaic absorption layer, and the center line of the odd-numbered line preformed groove P21 of formation after cutting and even number line preformed groove P22 difference simultaneous bias longitudinal groove P12;
E. on the photovoltaic absorption layer 3 after P2 laser scribing and cutting, dorsum electrode layer 4 is deposited;
F.P3 laser scribing and cutting: dorsum electrode layer 4 and photovoltaic absorption layer 3 are cut, the sub-battery modules that formation " snakelike " is connected in the direction of preformed groove P21, P22 that P3 laser is formed respectively after the lateral trench P11 formed after being parallel to P1 cutting, P2 cutting;
In described step D: the center line of odd-numbered line preformed groove P21 simultaneous bias longitudinal groove P12 to the right, the center line of even number line preformed groove P22 simultaneous bias longitudinal groove P12 left.
Claims (7)
1. improve solar cell module series voltage and effective method reducing hot spot effect, described method realizes on solar cell module preparation technology basis, the upper depositing electrically conductive thin layer (2) of base plate glass (1) is included in and scribing in described method step, depositing photovoltaic absorbed layer (3) scribing, deposit dorsum electrode layer (4) and scribing formation sub-series battery modules, it is characterized in that: the delineation mode of described conductive membrane layer (2) is: score line is along the lateral orientation of base plate glass (1) and the cutting of longitudinal azimuth crossings, conductive membrane layer (2) after cutting forms by lateral trench (P11) and longitudinal groove (P12) the separate conductive module be arranged in order, and the separate conductive module (21) of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges, the sub-battery modules that delineation carries out scribing according to the shape of front electrodes conduct bar respectively, formation " snakelike " is connected of described photovoltaic absorption layer (3) and dorsum electrode layer (4).
2. raising solar cell module series voltage according to claim 1 and effectively reduce the method for hot spot effect, is characterized in that: the connected mode that the separate conductive module (21) of described adjacent two row terminations is end to end comprises: the body of two pieces of separate conductive modules is in one-piece connection or connects by electric conducting material.
3. raising solar cell module series voltage according to claim 1 and effectively reduce the method for hot spot effect, it is characterized in that: adjacent two row terminations separate conductive module (21) on set up high conductivity silver/aluminium thin layer, the conductance of described silver/copper/aluminium thin layer respectively: silver is 0.0159(Ω mm
2/ m), copper is 0.0167(Ω mm
2/ m), aluminium is 0.02635(Ω mm
2/ m).
4. the solar cell module of how sub-serial battery prepared of method according to claim 1, structure sheaf comprises base plate glass (1), conductive membrane layer (2), photovoltaic absorption layer (3), dorsum electrode layer (4), it is characterized in that: the structure of described solar cell module comprises at least two row's sub-series batteries, the conductive membrane layer (2) of the sub-battery (5) of adjacent two row terminations joins end to end, and forms " snakelike " sub-series battery modules.
5. the solar cell module of a kind of how sub-serial battery according to claim 4, is characterized in that: the sub-cell shapes in described solar cell module is rectangle or square or triangle or hexagon.
6. the solar cell module of a kind of how sub-serial battery according to claim 4, it is characterized in that: between the conductive membrane layer (2) of sub-battery (5) of described adjacent two row terminations and photovoltaic absorption layer, be equipped with high conductivity silver/copper/aluminium thin layer, the conductance of described silver/copper/aluminium thin layer respectively: silver is 0.0159(Ω mm
2/ m), copper is 0.0167(Ω mm
2/ m), aluminium is 0.02635(Ω mm
2/ m).
7. the solar cell module of a kind of how sub-serial battery according to claim 4, is characterized in that: between the circuit of the adjacent row in interval and above sub-series battery, set up bypass diode (D1, D2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310449370.9A CN104282802B (en) | 2013-09-27 | 2013-09-27 | A kind of solaode module of how sub-battery series connection and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310449370.9A CN104282802B (en) | 2013-09-27 | 2013-09-27 | A kind of solaode module of how sub-battery series connection and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104282802A true CN104282802A (en) | 2015-01-14 |
| CN104282802B CN104282802B (en) | 2016-08-17 |
Family
ID=52257496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310449370.9A Active CN104282802B (en) | 2013-09-27 | 2013-09-27 | A kind of solaode module of how sub-battery series connection and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104282802B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098809A (en) * | 2016-08-19 | 2016-11-09 | 中山瑞科新能源有限公司 | A kind of preparation method of series-parallel film battery assembly |
| CN106229353A (en) * | 2016-08-19 | 2016-12-14 | 中山瑞科新能源有限公司 | A kind of film battery assembly preparation method connected again the most in parallel |
| CN106654015A (en) * | 2016-12-01 | 2017-05-10 | 广东工业大学 | Electrode splicing-type carbon-based perovskite solar cell manufacturing method |
| TWI661572B (en) * | 2017-07-21 | 2019-06-01 | 海力雅集成股份有限公司 | Solar module and the manufacture thereof |
| CN110176506A (en) * | 2019-05-31 | 2019-08-27 | 信利半导体有限公司 | Film photovoltaic cell cascaded structure and the concatenated preparation process of film photovoltaic cell |
| CN110226237A (en) * | 2016-09-26 | 2019-09-10 | 荷兰应用科学研究组织 | Thin film photovoltaic module |
| CN110676329A (en) * | 2018-07-02 | 2020-01-10 | 北京铂阳顶荣光伏科技有限公司 | Thin film solar cell and manufacturing method thereof |
| JP2020031231A (en) * | 2016-03-28 | 2020-02-27 | エルジー・ケム・リミテッド | Organic solar cell module and method for manufacturing the same |
| CN111446743A (en) * | 2018-12-27 | 2020-07-24 | 德州易能新能源科技有限公司 | Photovoltaic charging device |
| CN111640812A (en) * | 2017-12-30 | 2020-09-08 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module |
| CN113594300A (en) * | 2021-07-29 | 2021-11-02 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082211A (en) * | 2010-08-09 | 2011-06-01 | 河北东旭投资集团有限公司 | Amorphous silicon solar cell module simplifying process |
| CN102117815A (en) * | 2010-01-06 | 2011-07-06 | 京东方科技集团股份有限公司 | Solar battery assembly and preparation method thereof |
| US20120234375A1 (en) * | 2009-11-17 | 2012-09-20 | Mitsubishi Electric Corporation | Thin film solar cell and method of manufacturing the same |
| CN102714235A (en) * | 2010-01-22 | 2012-10-03 | 夏普株式会社 | Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet |
-
2013
- 2013-09-27 CN CN201310449370.9A patent/CN104282802B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120234375A1 (en) * | 2009-11-17 | 2012-09-20 | Mitsubishi Electric Corporation | Thin film solar cell and method of manufacturing the same |
| CN102117815A (en) * | 2010-01-06 | 2011-07-06 | 京东方科技集团股份有限公司 | Solar battery assembly and preparation method thereof |
| CN102714235A (en) * | 2010-01-22 | 2012-10-03 | 夏普株式会社 | Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet |
| CN102082211A (en) * | 2010-08-09 | 2011-06-01 | 河北东旭投资集团有限公司 | Amorphous silicon solar cell module simplifying process |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020031231A (en) * | 2016-03-28 | 2020-02-27 | エルジー・ケム・リミテッド | Organic solar cell module and method for manufacturing the same |
| CN106229353A (en) * | 2016-08-19 | 2016-12-14 | 中山瑞科新能源有限公司 | A kind of film battery assembly preparation method connected again the most in parallel |
| CN106098809B (en) * | 2016-08-19 | 2017-07-21 | 中山瑞科新能源有限公司 | A kind of preparation method of series-parallel film battery assembly |
| CN106229353B (en) * | 2016-08-19 | 2017-11-24 | 中山瑞科新能源有限公司 | A kind of film battery assembly preparation method first in parallel connected again |
| CN106098809A (en) * | 2016-08-19 | 2016-11-09 | 中山瑞科新能源有限公司 | A kind of preparation method of series-parallel film battery assembly |
| CN110226237B (en) * | 2016-09-26 | 2023-12-15 | 荷兰应用科学研究组织 | Thin film photovoltaic module |
| CN110226237A (en) * | 2016-09-26 | 2019-09-10 | 荷兰应用科学研究组织 | Thin film photovoltaic module |
| CN106654015A (en) * | 2016-12-01 | 2017-05-10 | 广东工业大学 | Electrode splicing-type carbon-based perovskite solar cell manufacturing method |
| TWI661572B (en) * | 2017-07-21 | 2019-06-01 | 海力雅集成股份有限公司 | Solar module and the manufacture thereof |
| CN111640812A (en) * | 2017-12-30 | 2020-09-08 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module |
| CN111640812B (en) * | 2017-12-30 | 2023-02-28 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module |
| CN110676329A (en) * | 2018-07-02 | 2020-01-10 | 北京铂阳顶荣光伏科技有限公司 | Thin film solar cell and manufacturing method thereof |
| CN111446743A (en) * | 2018-12-27 | 2020-07-24 | 德州易能新能源科技有限公司 | Photovoltaic charging device |
| CN110176506A (en) * | 2019-05-31 | 2019-08-27 | 信利半导体有限公司 | Film photovoltaic cell cascaded structure and the concatenated preparation process of film photovoltaic cell |
| CN113594300A (en) * | 2021-07-29 | 2021-11-02 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
| CN113594300B (en) * | 2021-07-29 | 2023-10-24 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104282802B (en) | 2016-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104282802B (en) | A kind of solaode module of how sub-battery series connection and preparation method thereof | |
| US11183606B2 (en) | Method for fabricating a solar module of rear contact solar cells using linear ribbon-type connector strips and respective solar module | |
| CN105826407B (en) | A kind of back contacts technique battery component and preparation method thereof | |
| CN104868841A (en) | Solar cell module | |
| CN101937948B (en) | Mask plate for preparing receiver of light-gathering film battery | |
| WO2008030019A1 (en) | Thin-film type solar cell including by-pass diode and manufacturing method thereof | |
| CN108428751B (en) | Shingle assembly structure | |
| CN102082198A (en) | High-power low-voltage silicon-based thin film solar cell and manufacturing method thereof | |
| CN106098809B (en) | A kind of preparation method of series-parallel film battery assembly | |
| WO2023060924A1 (en) | Thin-film solar cell structure and preparation method therefor | |
| CN110071186B (en) | Thin film photovoltaic module inline structure and production process | |
| CN205944116U (en) | Polycrystalline silicon does not have main grid solar module | |
| CN205863186U (en) | Cell piece assembly, cell piece matrix and solar module | |
| CN105830230B (en) | A kind of back contacts technique battery component and preparation method thereof | |
| TWI620334B (en) | Back contact solar cell and module thereof | |
| CN209104165U (en) | Solar battery sheet and solar cell module | |
| CN205944115U (en) | Battery piece, battery piece subassembly, battery piece matrix and solar cell | |
| EP3516703B1 (en) | Thin film photovoltaic module | |
| CN110649119A (en) | Solar power generation assembly based on crystalline silicon and preparation method thereof | |
| CN203466193U (en) | Solar cell module with plurality of serially-connected sub cells | |
| CN209785947U (en) | MWT solar cell, cell string and cell module | |
| CN204741024U (en) | Novel printing opacity type photovoltaic cell subassembly | |
| CN113257928A (en) | Scribing method for reducing dead zone area of thin-film solar cell | |
| CN204615756U (en) | Solar module | |
| CN208298839U (en) | A kind of cell piece, cell piece matrix and solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 610200 Sichuan province Shuangliu District of Chengdu City West Port Economic Development Zone and two Hua Road No. 1518 Patentee after: CHENGDU ZHONGPU TECHNOLOGY Co.,Ltd. Address before: 610200 Sichuan city of Chengdu province Shuangliu County West Port Economic Development Zone and two Hua Road No. 1518 Patentee before: CHENGDU XUSHUANG SOLAR TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170926 Address after: 102605, Beijing, Daxing District, Qingyun Town, 104 National Road East, Beijing, India and China Xinhua Printing Equipment Co., Ltd., hospital 1, room 103 Patentee after: Dongxu science and Technology Development Co.,Ltd. Address before: 610200 Sichuan province Shuangliu District of Chengdu City West Port Economic Development Zone and two Hua Road No. 1518 Patentee before: CHENGDU ZHONGPU TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |