CN110071186B - Thin film photovoltaic module inline structure and production process - Google Patents
Thin film photovoltaic module inline structure and production process Download PDFInfo
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- CN110071186B CN110071186B CN201910347339.1A CN201910347339A CN110071186B CN 110071186 B CN110071186 B CN 110071186B CN 201910347339 A CN201910347339 A CN 201910347339A CN 110071186 B CN110071186 B CN 110071186B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 239000010408 film Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 238000003475 lamination Methods 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 17
- 239000002313 adhesive film Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005289 physical deposition Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 239000012528 membrane Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention belongs to the technical field of patented photovoltaic modules, and particularly relates to an inline structure of a thin film photovoltaic module and a production process of the inline structure. The solar cell comprises a substrate layer, a back conductive layer, an absorption layer and a transparent conductive layer, wherein a whole thin film lamination is scribed to form a plurality of sub-cells through laser scribing grooves, then edge laser scribing areas are formed on the periphery of the whole thin film lamination, a current carrier collecting metal wire is printed or laid on the transparent conductive layer of each sub-cell in a silk screen mode, and a bus metal bar is used for connecting the current carrier collecting metal wires of the adjacent sub-cells with the back conductive layer, so that the series connection relation of the sub-cells is formed. Set up insulating glued membrane from top to bottom at the busbar metal, effectively prevent battery short circuit itself. Compared with the film photovoltaic module in the prior art, the film photovoltaic module interconnection structure has the advantages that the dead zone area is smaller, the utilization rate of the unit area of the film photovoltaic module is higher, the resistance is smaller, the process is simpler, the laser equipment investment in the preparation process is less, and the film photovoltaic module interconnection structure is more stable.
Description
Technical Field
The invention relates to the technical field of photovoltaic power generation, in particular to a thin film photovoltaic module inline structure and a production process.
Background
At present, two cell connection methods are commonly adopted in the packaging and manufacturing process of a photovoltaic module: the inline and the inline method. The external connection method is generally to arrange the battery pieces through discrete cells, then weld the external positive and negative electrodes of the metal bus bar, perform repeated procedures, arrange and lay, and then package the battery pieces; the inline method generally uses laser to scribe the insulator cell multiple times, then deposits other thin film material stacks after each laser scribing, completes the inter-cell connection through conductive oxide and metal electrode, and then completes the packaging.
The connection structure and the connection method between the cells in the two photovoltaic modules respectively have the following problems and disadvantages in different degrees:
the inline method needs multiple laser scribing, the laser scribing equipment belongs to precision equipment, the equipment investment is large, and the maintenance cost of subsequent multiple different laser equipment is high; in addition, the requirements of scribing quality, spacing, position and the like need to be guaranteed due to multiple laser scribes, and the dead zone area of the battery is increased due to the multiple scribes. The process needs to be highly controlled in terms of process realization to ensure the stability and consistency of product quality, each scribing needs to be transmitted to an independent device, and stable process conditions before scribing need to be interrupted, namely, samples need to be taken out from environments such as vacuum and the like and exposed to the atmosphere, so that the performance of the cell is influenced to a certain extent, and the conversion efficiency of the cell is further influenced. This method causes an increase in the cost of the product in terms of both the equipment cost and the process control.
The external connection method generally adopts metal bus bars to connect the positive electrode and the negative electrode of the battery piece in series-parallel connection, a welding process and a battery piece laying process are needed, the method generally causes the high-temperature local or even whole damage of the battery piece in the welding process, and the problem of large-area shading of the light receiving surface electrode, which causes serious efficiency loss. Meanwhile, the traditional external connection method adopts a positive and negative electrode series-parallel connection mode on the front and back surfaces of the battery piece, so that inconvenience in equipment and process is caused, and the appearance is not attractive enough.
In addition, the two connection modes can cause the problems of overlarge shading dead zone area, undersize effective area in unit area, overlow working efficiency of the assembly and overlarge output power loss, and no method capable of solving the technical problems exists in the prior art.
Disclosure of Invention
The invention provides a thin-film photovoltaic module interconnection structure and a production process thereof, and solves the technical problems of shading, overlarge dead zone area and large resistance caused by the existing photovoltaic module interconnection structure.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
a thin film photovoltaic module interconnection structure comprises a substrate layer, a back conductive layer, an absorption layer and a transparent conductive layer, wherein laser scribing grooves are scribed on a thin film lamination layer, and the depth of each laser scribing groove reaches the substrate layer and is used for dividing a battery into a plurality of sub-batteries; laser scribing areas with the depth reaching the edge of the substrate layer are arranged on the four sides of the whole battery; scribing depth from the inner side of an edge laser scribing area at the edge position of one side edge of the sub-cell perpendicular to the direction of the laser scribing groove to reach an interconnection area of the back conductive layer; a carrier collection metal wire is laid on the transparent conducting layer in the long side direction of each sub-battery; the current carrier collecting metal wire is connected with one end of a bus metal bar arranged along the short side direction of the sub-battery at the interconnection area of the battery, and the other end of the bus metal bar is connected with the back conductive layer of the adjacent sub-battery; a second insulating adhesive film strip is arranged below a bus metal strip of the sub-battery where the current carrier collecting metal wire is located, and a first insulating adhesive film is arranged above the whole bus metal strip; and arranging a positive lead on the back conductive layer of the sub-battery in the positive electrode direction of the battery, and connecting a negative lead on the bus metal bar of the sub-battery in the negative electrode direction of the battery.
Furthermore, an anode insulating glue film is arranged on the anode lead, and a cathode insulating glue film is arranged below the cathode lead.
Furthermore, the width of the interconnection area is 50-300 μm.
Furthermore, the width of the edge laser scribing area is 3-10 mm.
A production process of a thin film photovoltaic module inline structure comprises the following steps:
s1, sequentially depositing a back conductive layer, an absorption layer and a transparent conductive layer on the substrate layer;
s2, forming a plurality of sub-cells on the thin film stack obtained in the step S1 through first laser scribing, wherein the scribing depth reaches the substrate layer, and laser scribing grooves are formed between the sub-cells and adjacent sub-cells;
s3, performing secondary laser scribing on the whole four sides of the film lamination obtained in the step S2, wherein the laser scribing depth is the same as that in the step S2, and the laser scribing width is 3-10 mm away from the edge of the substrate layer to form an edge laser scribing area;
s4, on one side of the short side of each sub-cell perpendicular to the laser scribing groove, performing third laser scribing perpendicular to the laser scribing groove to form an inline region, wherein the scribing depth reaches the back conductive layer, and the scribing width of the inline region is 50-300 μm;
s5 carrier collection metal wires are laid on the transparent conducting layer of each sub-battery in a direction parallel to the laser scribing grooves, the carrier collection metal wires 3 can be nickel-plated copper wires, silver wires or platinum wires, the diameter of the carrier collection metal wires meets the requirement of complete carrier collection of the sub-batteries in principle, and the diameter is 50-150 mu m;
s6 the carrier collecting metal wire 3 is connected with one end of the bus metal bar 6 at the inner connection area 9 of the sub-battery, the other end of the bus metal bar 6 is connected with the back conductive layer 13 of the adjacent sub-battery, so that the adjacent two sub-batteries are connected in series, the diameter of the bus metal bar is 50-250 μm, and the bus metal bar can be a copper wire, a silver wire, a platinum wire or a gold wire; in the process of connecting adjacent sub-batteries in series, the bus metal bar 6 is prevented from causing short circuit of a single sub-battery;
s7 laying a second insulating glue film strip below the bus metal strip on the interconnection area of the sub-battery where the current carrier collection metal wire is located; arranging a bus metal bar on the second insulating glue film bar in a manner of being vertical to the current carrier collecting metal line, wherein one end of the bus metal bar is connected with the current carrier collecting metal line, and the other end of the bus metal bar is connected with the back conductive layer of the adjacent sub-battery;
s8, laying a first insulating glue film above the whole bus metal bar, and laying a positive electrode lead-out wire on the back conducting layer of the photoetching area of the first-position sub-battery; and leading out a negative electrode lead-out wire on the bus bar of the terminal sub-cell.
Further, S1 sequentially deposits a back conductive layer, an absorption layer, and a transparent conductive layer on the substrate layer by a physical deposition method.
Furthermore, the back conducting layer is used as the anode of the battery, the transparent conducting layer is used as the cathode of the battery, and the absorbing layer is a P-N nodule absorbing layer of the battery, so that the sub-battery structure is formed.
Furthermore, a carrier collecting metal wire is laid on the transparent conducting layer of each sub-cell in a silk-screen printing or laminating mode, and the carrier collecting metal wire can be designed to be a single grid line or a plurality of grid lines.
Has the advantages that: compared with the film photovoltaic module interconnection structure in the prior art, the film photovoltaic module interconnection structure provided by the invention has the advantages that the dead zone area is smaller, the utilization rate of the unit area of the film photovoltaic module is higher, and the resistance is smaller; the preparation process is simpler, the laser scribing requirement is lower, the laser equipment investment is less, the dead zone area is effectively controlled, and the unit area output power of the thin film battery component is obviously improved.
Drawings
Fig. 1 is a schematic top view of the present invention.
Fig. 2 is a sectional view in the longitudinal direction of the sub-cell of the present invention.
Figure 3 is a cross-sectional view of the short side of the present invention.
Description of reference numerals: 1. laser scribing a region at the edge; 2. sub-cells after laser cutting; 3. a carrier collecting metal line; 4. laser etching a groove; 5. a negative electrode lead; 6. a bus bar; 7. a positive electrode lead; 8. a substrate layer; 9. an inline region; 10. a transparent conductive layer; 11. packaging the adhesive film; 12. a light energy absorbing layer; 13. a back conductive layer; 14. a negative electrode insulation glue film; 15. a positive electrode insulating glue film; 16. a front panel layer; 17. a first insulating adhesive film; 18. a second insulating adhesive film; 19. and (5) sealing the edges.
Detailed Description
The whole battery material is scribed through the laser scribing groove 4 to form a plurality of sub batteries, then edge laser scribing areas are formed on the periphery of the whole battery thin film layer, the carrier collecting metal wire 3 is screen-printed on the transparent conducting layer 10 of each sub battery, and the bus metal bar 6 is used for connecting the carrier collecting metal wire 3 of the adjacent sub battery with the back conducting layer 13, so that the series connection relation of the sub batteries is formed. And a second insulating glue film strip 18 is laid below the bus metal strip 6 of the sub-battery where the current carrier collecting metal wire 3 is located, and a first insulating glue film 17 is arranged above the whole bus metal strip 6, so that the phenomenon that the bus metal strip 6 causes short circuit of a single sub-battery in the internal series connection process of adjacent sub-batteries is effectively prevented. Compared with the thin film battery pack interconnection structure in the prior art, the thin film battery pack interconnection structure has the advantages that the dead zone area is obviously reduced, the utilization rate of the unit area of the battery is effectively improved, and the output efficiency is improved. Compared with the traditional connection mode in the prior art, the series resistance of the battery and the product can be greatly reduced, and the internal loss of the photovoltaic module is reduced.
In the above technical solution, the positive lead 7 is further provided with a positive insulating film 15, and the negative lead 5 is further provided with a negative insulating film 14 below. The widths of the negative electrode insulating film 14 and the positive electrode insulating film 15 are 50 μm or 300 μm, preferably 200 μm. The positive and negative electrode insulating glue films further prevent the positive electrode lead 7 from being communicated with the transparent conducting layer 10 and the negative electrode lead 5 from being communicated with the back conducting layer 13, so that the occurrence of open circuit is prevented.
The edge laser scribed area 1 is 3mm, 5mm or 10mm wide.
s1 the back conducting layer 13, the absorbing layer 12 and the transparent conducting layer 10 are deposited on the substrate layer 8 in sequence, the whole film lamination preparation can be carried out continuous deposition, not only oxidation or pollution caused by frequent contact with air between films in the film preparation process of each layer is avoided, but also good combination between films in a continuous vacuum environment is ensured. The substrate layer 8 can be made of stainless steel, glass or polyester and the like; the back conductive layer 13 is used as the positive electrode of the battery, the transparent conductive layer 10 is used as the negative electrode of the battery, and the absorption layer 12 is a P-N core absorption layer of the battery. Laser scribing the material obtained in the step S1, namely the film stack prepared in the step S1, to form a plurality of strip-shaped film stacks, forming a plurality of sub-cells through first laser scribing, wherein the depth of the first laser scribing reaches the substrate layer 8, and laser scribing grooves 4 are formed between the sub-cells and adjacent sub-cells; the plurality of sub-cells are represented by omitted blocks in the figure. S3, carrying out secondary laser scribing on the four sides of the whole material obtained in the step S2 around the edges, wherein the laser scribing depth is the same as that in the step S2, the laser scribing depth reaches the substrate layer 8, and the laser scribing width is 3-10 mm away from the edges of the substrate layer 8 to form an edge laser scribing area 1. S4, on one side of the short side of each sub-cell, perpendicular to the laser scribing groove 4, carrying out a third laser scribing downwards from the transparent conductive layer 10 of the film stack to form an interconnection region 9, wherein the scribing depth reaches the back conductive layer 13, and the scribing width is 50 μm or 300 μm, preferably 100 μm; s5 the carrier collecting metal lines 3 are arranged on the transparent conducting layer 10 of each sub-cell in a screen printing or laminating mode to collect carriers, the carrier collecting metal lines 3 can be designed to be a single grid line or a plurality of grid lines, and carrier collection is achieved. S6 laying a second insulating paste film strip 18 under the bus bar metal strip 6 on the interconnection region 9 of the subcell where the carrier collection metal wire 3 is located; laying a bus metal bar 6 on the second insulating glue film bar 18 in a way of being vertical to the current carrier collecting metal wire 3, wherein one end of the bus metal bar 6 is welded with the current carrier collecting metal wire 3, and the other end of the bus metal bar is connected with the back conductive layer 13 of the adjacent sub-battery; s7, laying a first insulating glue film 17 above the whole bus metal bar 6, and laying a positive electrode lead wire 7 on the back conductive layer 13 of the photoetching partition of the first-position sub-battery; leading out a negative electrode lead wire 5 on a bus bar 6 of the terminal sub-cell; s8, a sealant film 11 is applied to the entire upper part of the battery, and the front plate layer 16 is covered on the sealant film 11 to perform lamination and sealing.
The thin-film solar cell inline structure and the process effectively solve the problems of wide dead zone, more laser scribing times, complex process and the like of the existing thin-film solar cell, the existing thin-film solar cell module needs to be scribed by three times of lasers P1, P2 and P3, the three times of scribing not only has complex film forming process, but also needs to be added with more laser devices, the thin-film module has about 500 mu m dead zone after being scribed by the three times of lasers, the dead zone can not output power, and simultaneously the series resistance is larger than the series resistance of the inline structure in the prior art. The preparation of the film with the inline structure can realize continuous vacuum film formation, and then laser scribing is carried out, a dead zone area is basically absent, the width of the inline area is 50 mu m, the utilization rate of the unit area of the battery is greatly reduced, the process is simple, the stability is high, and the equipment investment is reduced.
Claims (8)
1. The utility model provides a thin film photovoltaic module inline structure, includes substrate layer, back of the body conducting layer, absorbed layer and transparent conducting layer, its characterized in that: laser scribing grooves are formed in the film lamination layer in a laser scribing mode, the laser scribing grooves penetrate through the transparent conducting layer, the absorbing layer and the back conducting layer to the substrate layer, and the battery is divided into a plurality of sub batteries; laser scribing areas with depths reaching the edges of the substrate layer are scribed on the four sides of the whole cell; scribing the inner side of the edge laser scribing area at the edge position of one side edge of the sub-cell perpendicular to the direction of the laser scribing groove to form an interconnection area with the depth reaching the back conductive layer; a carrier collection metal wire is arranged on the transparent conducting layer in the long side direction of each sub-battery; the current carrier collecting metal wire is connected with one end of a bus metal bar arranged along the short side direction of the sub-battery at the interconnection area of the battery, and the other end of the bus metal bar is connected with the back conductive layer of the adjacent sub-battery; a second insulating adhesive film strip is arranged below a bus metal strip of the sub-battery where the current carrier collecting metal wire is located, and a first insulating adhesive film is arranged above the whole bus metal strip; and a positive lead is laid on the back conductive layer of the sub-battery in the positive electrode direction of the battery, and a negative lead is connected on the bus metal bar of the sub-battery in the negative electrode direction of the battery.
2. The thin film photovoltaic module interconnect structure of claim 1 wherein: an anode insulating glue film is further arranged on the anode lead, and a cathode insulating glue film is further arranged below the cathode lead.
3. The thin film photovoltaic module interconnect structure of claim 2, wherein: the width of the interconnection region is 50 to 300 μm.
4. The thin film photovoltaic module interconnect structure of claim 3, wherein: the width of the edge laser scribing region 1 is 3-10 mm.
5. A process for producing an inline structure of a thin film photovoltaic module according to any of claims 1 to 4, comprising the steps of:
s1, sequentially depositing a back conductive layer, an absorption layer and a transparent conductive layer on the substrate layer;
s2, forming a plurality of sub-batteries by the thin film lamination obtained in the step S1 through first laser scribing, wherein the scribing depth reaches the substrate layer, laser scribing grooves are formed between the sub-batteries and adjacent sub-batteries, and the width of each adjacent laser scribing groove is 5-15 mm;
s3, performing secondary laser scribing on the whole four sides of the film lamination obtained in the step S2, wherein the laser scribing depth is the same as that in the step S2, and the laser scribing width is 3-10 mm away from the edge of the substrate layer to form an edge laser scribing area;
s4, on one side of the short side of each sub-cell perpendicular to the laser scribing groove, performing third laser scribing perpendicular to the laser scribing groove to form an inline region, wherein the scribing depth reaches the back conductive layer, and the scribing width of the inline region is 50-300 μm;
s5, printing or laminating a carrier collection metal wire on the transparent conducting layer of each sub-battery in parallel to the direction of the laser scribing groove, wherein the carrier collection metal wire is a nickel-plated copper wire, a silver wire or a platinum wire, the diameter of the carrier collection metal wire meets the requirement of complete carrier collection of the sub-battery in principle, and the diameter of the carrier collection metal wire is 50-150 mu m;
s6 the carrier collecting metal wire is connected with one end of the bus metal bar at the inner connection area of the sub-battery, the other end of the bus metal bar is connected with the back conductive layer of the adjacent sub-battery, so that the adjacent two sub-batteries are connected in series, the diameter of the bus metal bar is 50-250 μm, and the bus metal bar is made of copper wire, silver wire, platinum wire or gold wire; in the process of connecting adjacent sub-batteries in series, the bus metal bar is prevented from causing short circuit of a single sub-battery;
s7 laying a second insulating glue film strip below the bus metal strip on the interconnection area of the sub-battery where the current carrier collection metal wire is located; arranging a bus metal bar on the second insulating glue film bar in a manner of being vertical to the current carrier collecting metal line, wherein one end of the bus metal bar is connected with the current carrier collecting metal line, and the other end of the bus metal bar is connected with the back conductive layer of the adjacent sub-battery;
s8, laying a first insulating glue film above the whole bus metal bar, and laying a positive electrode lead-out wire on the back conducting layer of the photoetching area of the first-position sub-battery; and leading out a negative electrode lead-out wire on the bus bar of the terminal sub-cell.
6. The process for producing a thin-film photovoltaic module inline structure according to claim 5, wherein: s1 preparing a back conductive layer, an absorption layer and a transparent conductive layer on the substrate layer by a physical deposition method or a chemical deposition method in sequence.
7. The process for producing a thin-film photovoltaic module inline structure according to claim 6, wherein: the back conductive layer is used as the anode of the battery, the transparent conductive layer is used as the cathode of the battery, and the absorption layer is a P-N core absorption layer of the battery.
8. The process for producing a thin-film photovoltaic module inline structure according to claim 5, wherein: and a carrier collecting metal wire is laid on the transparent conducting layer of each sub-cell in a screen printing or laminating manner, and the carrier collecting metal wire can be designed into a single grid line or a plurality of grid lines.
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| CN112993162B (en) * | 2019-12-12 | 2023-11-21 | 中国科学院大连化学物理研究所 | Perovskite solar cell device structure and preparation method |
| CN113540281B (en) * | 2020-04-13 | 2024-03-29 | 隆基绿能科技股份有限公司 | Laminated photovoltaic device |
| CN112531038A (en) * | 2020-11-06 | 2021-03-19 | 凯盛光伏材料有限公司 | Thin-film double-glass photovoltaic module and preparation method thereof |
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| TW201041161A (en) * | 2009-05-13 | 2010-11-16 | Axuntek Solar Energy Co Ltd | Solar cell structure and manufacturing method thereof |
| CN106129147A (en) * | 2016-09-19 | 2016-11-16 | 中国电子科技集团公司第十八研究所 | Flexible CIGS thin film solar cell module interconnection method |
| CN107210327A (en) * | 2014-12-03 | 2017-09-26 | 索里布罗研究公司 | Photovoltaic module and the method for producing it |
| CN108431966A (en) * | 2015-12-16 | 2018-08-21 | 太阳伙伴科技公司 | For reducing the Optical devices of the visibility of the electrical interconnection in the translucent photovoltaic module of thin layer |
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2019
- 2019-04-28 CN CN201910347339.1A patent/CN110071186B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201041161A (en) * | 2009-05-13 | 2010-11-16 | Axuntek Solar Energy Co Ltd | Solar cell structure and manufacturing method thereof |
| CN107210327A (en) * | 2014-12-03 | 2017-09-26 | 索里布罗研究公司 | Photovoltaic module and the method for producing it |
| CN108431966A (en) * | 2015-12-16 | 2018-08-21 | 太阳伙伴科技公司 | For reducing the Optical devices of the visibility of the electrical interconnection in the translucent photovoltaic module of thin layer |
| CN106129147A (en) * | 2016-09-19 | 2016-11-16 | 中国电子科技集团公司第十八研究所 | Flexible CIGS thin film solar cell module interconnection method |
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