CN104282647B - 高功率半导体模块 - Google Patents
高功率半导体模块 Download PDFInfo
- Publication number
- CN104282647B CN104282647B CN201410329748.6A CN201410329748A CN104282647B CN 104282647 B CN104282647 B CN 104282647B CN 201410329748 A CN201410329748 A CN 201410329748A CN 104282647 B CN104282647 B CN 104282647B
- Authority
- CN
- China
- Prior art keywords
- high power
- short
- semiconductor
- module
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 260
- 230000005611 electricity Effects 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 48
- 239000013307 optical fiber Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 241000227287 Elliottia pyroliflora Species 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000002045 lasting effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/021—Details concerning the disconnection itself, e.g. at a particular instant, particularly at zero value of current, disconnection in a predetermined order
- H02H3/023—Details concerning the disconnection itself, e.g. at a particular instant, particularly at zero value of current, disconnection in a predetermined order by short-circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/49—Combination of the output voltage waveforms of a plurality of converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
Abstract
Description
10 | 高功率半导体模块 | 11 | 电路板 |
12 | 高功率半导体设备 | 13 | 快门 |
14a | 电连接 | 14b | 电连接 |
16 | 短路设备 | 18 | 电容器 |
20 | 电容器 | 22 | 二极管 |
23 | 触发信号 | 24 | 晶闸管 |
26 | 盘 | 28 | 共同衬底 |
30 | 高功率半导体 | 31 | 电容器构件 |
32 | 短路半导体 | 34 | 续流二极管 |
36 | 中间区 | 38 | 第一环形区 |
40 | 第二环形区 | 42 | 控制电子器件 |
44 | 引线 | 46 | 短路设备电路 |
47 | 电力供应 | 49 | 主电路 |
52 | 光纤连接 | 54 | 光纤连接 |
56 | 电容器构件 | 58 | 控制电子器件 |
60 | 极片 | 61 | 钼盘 |
62 | 孔 | 64 | 绝缘架 |
66 | 陶瓷衬套 | 68 | 铜衬套 |
70 | 触销 | 72 | 尾端件 |
73 | 绝缘材料 | 74 | 沟槽 |
76 | p掺杂部分 | 78 | 门极端子 |
79 | n掺杂部分 | 80 | 阴极 |
81 | p掺杂部分 | 82 | 阳极 |
83 | p掺杂部分 | 84 | n掺杂部分 |
86 | 阳极 | 88 | p掺杂部分 |
90 | 阴极 | 92 | 导电路径 |
94 | 系统 | 96 | 模块化多电平转换器 |
98 | 控制器 | 102 | 支路 |
104 | DC链路 | 106 | 相位输出 |
S1 | 检测失效 | S2 | 产生触发信号 |
S3 | 产生导电路径 |
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13176361.7A EP2824701B1 (en) | 2013-07-12 | 2013-07-12 | High-power semiconductor module |
EP13176361.7 | 2013-12-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104282647A CN104282647A (zh) | 2015-01-14 |
CN104282647B true CN104282647B (zh) | 2019-04-12 |
Family
ID=48771357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410329748.6A Active CN104282647B (zh) | 2013-07-12 | 2014-07-11 | 高功率半导体模块 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9490621B2 (zh) |
EP (1) | EP2824701B1 (zh) |
JP (1) | JP6474555B2 (zh) |
CN (1) | CN104282647B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105324924B (zh) * | 2013-04-18 | 2018-12-25 | Abb瑞士股份有限公司 | 机械旁路开关装置、变换器臂和功率变换器 |
EP3577687B1 (en) | 2017-02-01 | 2020-10-07 | ABB Power Grids Switzerland AG | Power semiconductor device with active short circuit failure mode and method of controlling the same |
US11320493B2 (en) * | 2017-07-07 | 2022-05-03 | Siemens Energy Global GmbH & Co. KG | Electric short-circuit device |
EP3462479B1 (en) * | 2017-10-02 | 2020-12-09 | General Electric Technology GmbH | Semiconductor assembly with fault protection |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3932665B2 (ja) * | 1998-04-07 | 2007-06-20 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US6980647B1 (en) * | 1999-01-12 | 2005-12-27 | Teccor Electronics, Lp | Primary telephone line protector with failsafe |
JP2001238460A (ja) * | 2000-02-24 | 2001-08-31 | Hitachi Ltd | 電力変換装置 |
DE10323220B4 (de) * | 2003-05-22 | 2014-07-17 | Siemens Aktiengesellschaft | Kurzschluss-Schaltung für einen Teilumrichter |
DE102007018344B4 (de) * | 2007-04-16 | 2022-08-04 | Siemens Energy Global GmbH & Co. KG | Vorrichtung zum Schutz von Umrichtermodulen |
CN100464340C (zh) * | 2007-09-21 | 2009-02-25 | 百富计算机技术(深圳)有限公司 | 安全保护盒 |
DE102009043229A1 (de) * | 2009-09-28 | 2011-03-31 | Siemens Aktiengesellschaft | Vorrichtung zum Kurzschließen |
EP2369725B1 (de) * | 2010-03-25 | 2012-09-26 | ABB Schweiz AG | Überbrückungseinheit |
CN105610312A (zh) * | 2011-11-11 | 2016-05-25 | 台达电子企业管理(上海)有限公司 | 一种级联型变频器及功率单元 |
EP2597764B1 (de) * | 2011-11-22 | 2016-04-13 | ABB Technology AG | Verfahren zur Behandlung von Fehlern in einem modularen Multilevelumrichter sowie ein solcher Umrichter |
JP5938202B2 (ja) * | 2011-12-08 | 2016-06-22 | 東芝三菱電機産業システム株式会社 | 電力変換装置用部品 |
CN102801295B (zh) * | 2012-08-09 | 2015-01-28 | 株洲变流技术国家工程研究中心有限公司 | 一种模块化多电平换流器的子模块故障保护电路及方法 |
US9154138B2 (en) * | 2013-10-11 | 2015-10-06 | Palo Alto Research Center Incorporated | Stressed substrates for transient electronic systems |
-
2013
- 2013-07-12 EP EP13176361.7A patent/EP2824701B1/en active Active
-
2014
- 2014-07-04 JP JP2014138597A patent/JP6474555B2/ja active Active
- 2014-07-11 US US14/328,848 patent/US9490621B2/en active Active
- 2014-07-11 CN CN201410329748.6A patent/CN104282647B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP2824701B1 (en) | 2020-05-06 |
JP2015019569A (ja) | 2015-01-29 |
EP2824701A1 (en) | 2015-01-14 |
CN104282647A (zh) | 2015-01-14 |
US9490621B2 (en) | 2016-11-08 |
JP6474555B2 (ja) | 2019-02-27 |
US20150162738A1 (en) | 2015-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2330740B1 (en) | System and method for controlling at least two power semiconductors connected in parallel | |
TWI649969B (zh) | 使用氮化鎵裝置半橋功率轉換電路 | |
TWI748284B (zh) | 共振電路及操作一共振電路之方法 | |
TWI821970B (zh) | 自舉式電源供應電路 | |
US10263506B2 (en) | Circuit arrangement and method for gate-controlled power semiconductor devices | |
CN104282647B (zh) | 高功率半导体模块 | |
JP6731543B2 (ja) | 電気的なエネルギー蓄積器を放電させる方法 | |
US20090161277A1 (en) | Method and device for preventing damage to a semiconductor switch circuit during a failure | |
CN110176858B (zh) | 利用一或多个基于GaN的半导体装置的功率转换电路 | |
TW201924224A (zh) | 電容式耦合位準移位器 | |
US10530496B2 (en) | Galvanically isolated auxiliary LED for performing input operations | |
DiMarino et al. | Design and development of a high-density, high-speed 10 kV SiC MOSFET module | |
DiMarino et al. | Fabrication and characterization of a high-power-density, planar 10 kV SiC MOSFET power module | |
EP2729964B1 (en) | Short-circuit failure mode with multiple device breakdown | |
JP2020518226A (ja) | ノーマリオンの半導体スイッチに基づく電源モジュール | |
DK2789068T3 (en) | Circuit device for reducing the current in a high voltage dc transfer line, high voltage dc transfer system and method for reducing the current in an electric current | |
US11948768B2 (en) | Mechatronic module having a hybrid circuit arrangement | |
CN104838577A (zh) | 电力电子设备模块中用于改进的故障模式处理的无源电路 | |
US11437807B2 (en) | Electronic switch | |
CN110880860B (zh) | 模块化dc消弧器 | |
US9692407B2 (en) | Circuit and method for detection of failure of the driver signal for parallel electronic switches | |
TWI846584B (zh) | 電流感測電路,以及用一電流感測電路感測電流的方法 | |
EP2908339A1 (en) | Power semiconductor arrangement and method for protecting a power semiconductor module against failures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180510 Address after: Baden, Switzerland Applicant after: ABB Switzerland Co.,Ltd. Address before: Zurich Applicant before: ABB TECHNOLOGY Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210622 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240109 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |