CN104282442B - A kind of DSSC photocathode and its preparation method and application - Google Patents
A kind of DSSC photocathode and its preparation method and application Download PDFInfo
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- CN104282442B CN104282442B CN201410555076.0A CN201410555076A CN104282442B CN 104282442 B CN104282442 B CN 104282442B CN 201410555076 A CN201410555076 A CN 201410555076A CN 104282442 B CN104282442 B CN 104282442B
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- photocathode
- film
- dssc
- conductive film
- transparent conductive
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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Abstract
The invention discloses a kind of DSSC photocathode and its preparation method and application.This method comprises the following steps：(1) layer of transparent conductive film is deposited in the polymeric substrates with heat shrinkability characteristic；(2) layer of metal film is deposited on transparent conductive film surface；(3) structure that step (2) is obtained is made annealing treatment, makes substrate heat shrinkable, fold and gap are formed on transparent conductive film and metallic film, complete the preparation of photocathode.The method can significantly improve the catalysis area of photocathode, photocathode is improved to the reflectivity and scattered power through light, and then improve the utilization rate of reduction efficiency and light anode to incident light of photocathode, the final photoelectric transformation efficiency for improving DSSC, and preparation process is easily accurately controlled, favorable repeatability, it is with low cost.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly, to a kind of DSSC time
Pole and its preparation method and application.
Background technology
DSSC is to imitate a kind of novel solar battery that photosynthesis principle is developed.With biography
The silicon solar cell of system is compared, and DSSC has service life long, simple production process, production cost
It is low, the advantages of production process is environmentally friendly.
The photocathode (being called to electrode) of DSSC plays a part of transmission electronics and catalysis is reduced, its
Surface topography and electrocatalysis characteristic are had a major impact to the photoelectric efficiency of DSSC, therefore we are needed to light
Negative electrode is modified, to improve its performance.However, the DSSC prepared currently with magnetron sputtering technique
Photocathode includes substrate and platinum metallic film, and the contact surface with electrolyte is planar structure, the catalysis area of this photocathode
Small, the reflectivity to the incident light through light anode is poor, is unfavorable for improving light anode to the utilization rate of incident light, causes dyestuff quick
The photoelectric transformation efficiency for changing solar cell is not high.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of DSSC light
Negative electrode and its preparation method and application, this method can significantly improve the catalysis area of photocathode, improve photocathode to through light
Reflectivity and scattered power, and then the reduction efficiency and light anode that improve photocathode finally improve dyestuff to the utilization rate of incident light
The photoelectric transformation efficiency of sensitization solar battery, and preparation process easily accurately controls, favorable repeatability is with low cost.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of DSSC time
The preparation method of pole, it is characterised in that comprise the following steps：(1) one is deposited in the polymeric substrates with heat shrinkability characteristic
Layer transparent conductive film；(2) layer of metal film is deposited on transparent conductive film surface；(3) structure that step (2) is obtained is entered
Row annealing, makes substrate heat shrinkable, and fold and gap are formed on transparent conductive film and metallic film, completes photocathode
Preparation.
Preferably, the material of the transparent conductive film is ITO, AZO or FTO.
Preferably, the thickness of the transparent conductive film is 16~60nm.
Preferably, the material of the metallic film is gold, platinum or rhodium.
Preferably, the thickness of the metallic film is 50~70nm.
Preferably, in the step (3), annealing temperature is 120~150 DEG C, and annealing time is 5~10min.
It is another aspect of this invention to provide that there is provided a kind of DSSC time prepared in aforementioned manners
Pole.
According to another aspect of the present invention, there is provided a kind of DSSC containing above-mentioned photocathode.
In general, by the contemplated above technical scheme of the present invention compared with prior art, with following beneficial effect
Really：
1st, using substrate of the polymer with shrinkage character as photocathode, form transparent with fold in substrate
Conductive film and metallic film, the contact area of the electrolyte and photocathode that increase DSSC (are catalyzed
Area), so as to improve the reduction efficiency of photocathode.
2nd, using substrate of the polymer with shrinkage character as photocathode, formed in substrate with nano gap
Transparent conductive film and metallic film, nano gap destroy the lattice structure inside film, make the incidence transmitted through light anode
Light returns to light anode by scattering and multiple reflections and refraction, utilization rate of the light anode to incident light is improved, so as to improve
The photoelectric transformation efficiency of DSSC.
3rd, preparation process is easily accurately controlled, and favorable repeatability, with low cost.
Brief description of the drawings
Fig. 1 is the preparation technology schematic flow sheet of the DSSC photocathode of the embodiment of the present invention；
Fig. 2 is using the embodiment of the present invention 4 and comparative example 1 and the DSSC of the photocathode of comparative example 2
Photoelectric current work spectrum；
Fig. 3 is using the embodiment of the present invention 5 and comparative example 1 and the DSSC of the photocathode of comparative example 2
Photoelectric current work spectrum.
In all of the figs, identical reference is used for representing identical element or structure, wherein：1- polymer matrixes
Bottom, 2- transparent conductive films, 3- metallic films, 4- folds, 5- nano gaps.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
Photocathode is obtained by sputtering one layer of platinum metallic film in substrate in the prior art, due to being connect with electrolyte
Contacting surface is planar structure, and catalysis area is small, low to the reduction efficiency of electrolyte, and to the reflection of the incident light through light anode
Property is poor, is unfavorable for the recycling to incident light so that light anode is low to the utilization rate of incident light, causes dye sensitization of solar
The photoelectric transformation efficiency of battery is not high.The present invention introduces transparent conductive film between substrate and metallic film, and to substrate-transparent
Conductive film-metal thin film structure is made annealing treatment, because the heat-shrinkable of transparent conductive film and metallic film is weaker, and
The fragility of transparent conductive film is larger, and fold and nano gap are formed on transparent conductive film and metallic film, is on the one hand increased
The electrolyte and the contact area (being catalyzed area) of photocathode of big DSSC, so as to improve photocathode
Reduction efficiency；On the other hand the reflectivity to the incident light through light anode is improved, and then improves light anode to incidence
The utilization rate of light；Finally improve the photoelectric transformation efficiency of DSSC.
As shown in figure 1, the preparation method of the DSSC photocathode of the embodiment of the present invention includes following step
Suddenly：
(1) magnetron sputtering technique is used, layer of transparent conductive thin is deposited in the polymeric substrates 1 with heat shrinkability characteristic
Film 2；Specifically, the material of transparent conductive film is ITO, AZO or FTO, and thickness is 16~60nm；
(2) magnetron sputtering technique is used, in the surface deposition layer of metal film 3 of transparent conductive film 2；Specifically, it is golden
It is gold, platinum or rhodium to belong to the material of film, and thickness is 50~70nm；
(3) structure that step (2) is obtained is made annealing treatment, makes substrate heat shrinkable, due to being deposited in substrate
The heat-shrinkable of transparent conductive film and metallic film is weaker, and the fragility of transparent conductive film is larger, in the production of two film surfaces
Raw misfit stress, so as to form fold 4 and nano gap 5, completes the preparation of photocathode.Specifically, annealing temperature be 120~
150 DEG C, annealing time is 5~10min.
To make those skilled in the art more fully understand the present invention, with reference to specific embodiment, to the dyestuff of the present invention
The preparation method of sensitization solar battery photocathode is described in detail.
Embodiment 1
Using magnetron sputtering technique, one layer of ito thin film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
20nm；Using magnetron sputtering technique, one layer of golden film is deposited on ito thin film, thickness is 50nm；Made annealing treatment, annealing temperature
Spend for 120 DEG C, annealing time is 5min, make substrate heat shrinkable, fold and nano gap are formed on ito thin film and golden film.
Embodiment 2
Using magnetron sputtering technique, one layer of AZO film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
50nm；Using magnetron sputtering technique, one layer of platinum film is deposited on AZO films, thickness is 60nm；Made annealing treatment, annealing temperature
Spend for 140 DEG C, annealing time is 8min, make substrate heat shrinkable, fold and nano gap are formed on AZO films and platinum film.
Embodiment 3
Using magnetron sputtering technique, one layer of FTO film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
60nm；Using magnetron sputtering technique, one layer of rhodium film is deposited on FTO films, thickness is 70nm；Made annealing treatment, annealing temperature
Spend for 150 DEG C, annealing time is 10min, make substrate heat shrinkable, fold and nano gap are formed on FTO films and rhodium film.
Embodiment 4
Using magnetron sputtering technique, one layer of ito thin film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
16nm；Using magnetron sputtering technique, one layer of platinum film is deposited on ito thin film, thickness is 50nm；Made annealing treatment, annealing temperature
Spend for 150 DEG C, annealing time is 10min, make substrate heat shrinkable, fold and nano gap are formed on ito thin film and platinum film.
Embodiment 5
Using magnetron sputtering technique, one layer of ito thin film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
30nm；Using magnetron sputtering technique, one layer of platinum film is deposited on ito thin film, thickness is 50nm；Made annealing treatment, annealing temperature
Spend for 150 DEG C, annealing time is 10min, make substrate heat shrinkable, fold and nano gap are formed on ito thin film and platinum film.
Comparative example 1
Using magnetron sputtering technique, one layer of platinum film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
50nm；Made annealing treatment, annealing temperature is 150 DEG C, and annealing time is 10min, makes substrate heat shrinkable.
Comparative example 2
Using magnetron sputtering technique, one layer of ito thin film is deposited in the polymeric substrates with heat shrinkability characteristic, thickness is
30nm；Using magnetron sputtering technique, one layer of platinum film is deposited on ito thin film, thickness is 50nm.
By taking embodiment 4 and embodiment 5 as an example, under the same conditions, the inventive method and the He of comparative example 1 will be used respectively
DSSC photocathode prepared by the method for comparative example 2 is used in DSSC, measures dyestuff
The photoelectric current work spectrum of sensitization solar battery is as shown in Figures 2 and 3.
From Fig. 2 and Fig. 3, the DSSC of the photocathode prepared using the inventive method is to incident light
Absorber Bandwidth significantly increase, photoelectric transformation efficiency (IPCE) is significantly improved.Because the inventive method is to prepare dyestuff quick
Fold and nano gap are formd on photocathode surface during changing solar cell photocathode, fold increases photocathode table
The catalysis area in face, improves reduction efficiency of the photocathode to electrolyte；Nano gap destroys the lattice structure of film surface,
The reflectivity of film is enhanced, the incident light be conducive to transmitted through light anode turns again to light anode, realize the weight to incident light
It is multiple to utilize, utilization rate of the light anode to incident light is improved, so as to improve the opto-electronic conversion effect of DSSC
Rate.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (2)
1. a kind of preparation method of DSSC photocathode, it is characterised in that comprise the following steps：
(1) in the polymeric substrates with heat shrinkability characteristic, layer of transparent conductive film, the material of the transparent conductive film are deposited
Expect for ITO, AZO or FTO, and its thickness is 16nm~60nm；
(2) on the surface of the transparent conductive film, continue to deposit layer of metal film, and the material of the metallic film is
Ag, Pt or Rh, its thickness are 50nm~70nm；
(3) structure that step (2) is obtained is made annealing treatment, makes the polymeric substrates heat shrinkable, transparent led described
Misfit stress is produced on conductive film and the metallic film this two film surface, fold and nano gap is consequently formed, so it is complete
Into the preparation of photocathode；Connecing between electrolyte and photocathode of the wherein described fold for increasing fuel sensitization solar battery
Contacting surface is accumulated, and the nano gap is used to make it that the incident light transmitted through light anode is returned to by scattering and multiple reflections and refraction
Photocathode, thus improves utilization rate of the light anode to incident light.
2. the preparation method of DSSC photocathode as claimed in claim 1, it is characterised in that the step
(3) in, the temperature of the annealing is 120 DEG C~150 DEG C, and annealing time is 5min~10min.
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| CN201410555076.0A CN104282442B (en) | 2014-10-17 | 2014-10-17 | A kind of DSSC photocathode and its preparation method and application |
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| CN201410555076.0A CN104282442B (en) | 2014-10-17 | 2014-10-17 | A kind of DSSC photocathode and its preparation method and application |
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| CN104282442A CN104282442A (en) | 2015-01-14 |
| CN104282442B true CN104282442B (en) | 2017-09-29 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288745A (en) * | 1998-04-03 | 1999-10-19 | Nikon Corp | Flexible wet solar battery and its manufacture |
| CN101485035A (en) * | 2006-07-13 | 2009-07-15 | 帝人杜邦薄膜日本有限公司 | Dye-sensitized solar cell, and electrode and laminated film therefor |
| CN102789906A (en) * | 2012-05-28 | 2012-11-21 | 营口奥匹维特新能源科技有限公司 | Preparation method for dye sensitized solar cell flexible Pt-carried counter electrode |
| CN103213371A (en) * | 2012-01-18 | 2013-07-24 | 旭硝子株式会社 | Method for manufacturing electronic device and method for manufacturing glass laminate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100554179B1 (en) * | 2004-06-09 | 2006-02-22 | 한국전자통신연구원 | Flexible dye-sensitized solar cell using conducting metal substrate |
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- 2014-10-17 CN CN201410555076.0A patent/CN104282442B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288745A (en) * | 1998-04-03 | 1999-10-19 | Nikon Corp | Flexible wet solar battery and its manufacture |
| CN101485035A (en) * | 2006-07-13 | 2009-07-15 | 帝人杜邦薄膜日本有限公司 | Dye-sensitized solar cell, and electrode and laminated film therefor |
| CN103213371A (en) * | 2012-01-18 | 2013-07-24 | 旭硝子株式会社 | Method for manufacturing electronic device and method for manufacturing glass laminate |
| CN102789906A (en) * | 2012-05-28 | 2012-11-21 | 营口奥匹维特新能源科技有限公司 | Preparation method for dye sensitized solar cell flexible Pt-carried counter electrode |
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