CN104253202A - 一种光输出耦合设备及包括其的显示器或投影仪 - Google Patents
一种光输出耦合设备及包括其的显示器或投影仪 Download PDFInfo
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- 238000010168 coupling process Methods 0.000 title claims abstract description 40
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims abstract description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000012530 fluid Substances 0.000 claims abstract description 10
- 230000008878 coupling Effects 0.000 claims description 36
- 229920000642 polymer Polymers 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 239000008103 glucose Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229920002545 silicone oil Polymers 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 12
- 239000010980 sapphire Substances 0.000 abstract description 12
- 238000000605 extraction Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H10K59/875—Arrangements for extracting light from the devices
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Abstract
本发明提供了一种用于从光源提取光辐射的增强的光输出耦合设备及包括其的显示器或投影仪。该增强的光输出耦合设备包括具有多个通道的格栅，涂覆在该格栅上的反射材料层，以及高折射率流体层。此外，该格栅被填充有用于进行光转换的荧光体颗粒。当前要求保护的发明的设备能够有效地避免由蓝宝石衬底和荧光体颗粒引起的散射问题，并且减少在进行光提取期间格栅阵列的光吸收，从而带来更好的图像质量。
Description
对相关申请的交叉引用
本申请要求2013年6月26日提交的、申请号为61/957,167的美国临时专利申请的权益，并且通过引用将该临时专利申请的内容全部合并于此。
技术领域
本发明主要涉及光输出耦合(out-coupling)设备。更优选地，其涉及用于从光源提取光辐射的增强的光输出耦合设备。本发明还涉及用于制造所述光输出耦合设备的方法。
背景技术
在硅基发光二极管(LEDoS)设备的发展过程中，光散射已经成为一个问题。这是由于如下的事实，即LED芯片的蓝宝石衬底的高折射率会增强散射。此外，用来进行从蓝色到绿色以及从蓝色到红色的光转换的荧光体(phosphor)颗粒的使用会使散射进一步增强。这个问题导致，当LED指向型光源(pointed-light source)被用来向屏幕上投射光时图像不清楚，给要在投影仪应用上使用的LEDoS带来不利的影响。
插入准直仪或格栅(grid)可以帮助减少散射，正如第2012/0223875号美国公开专利申请中所证实的那样，但是由于格栅/准直仪会吸收一定量的光，光强度也减少了。类似地，当光源被用于投影仪应用时，这仍然不是有利的。’875号专利申请也不适合于尺寸相对小些的LED阵列，因为由于尺寸的限制，它们要求保护的设备降低了穿过类似格栅的结构传播的光的光强度。
当微显示器的尺寸变得越来越小时，这个问题变得更糟。对于通道尺寸小于100微米的准直仪来说，被侧壁吸收的光变得相当多而且发出的光的强度明显减少。
发明内容
本发明的第一方面提供了一种增强的光输出耦合设备，比如准直仪，包括具有(多个)通道和高反射表面的格栅。该高反射表面，为类似镜面的涂层，能够增强从光源的光提取。该增强的光输出耦合设备可以被填充有光转换荧光体，该光转换荧光体将来自光源的光转换至更长的波长。该增强的光输出耦合设备的反射表面可以进一步有助于提取来自光转换荧光体的具有更长波长的光。该光输出耦合设备可以进一步包括填充在格栅和光源之间的空间内的高折射率流体层，使得由蓝宝石衬底产生的光散射问题被进一步减小。
本发明的第二方面提供了一种制造所述光输出耦合设备的方法，包括如下步骤：形成格栅；以及在该格栅上涂覆反射材料层。形成格栅的步骤包括光刻(lithography)形成图案，随后对硅晶片或其它衬底进行化学湿法或干法蚀刻。在格栅上涂覆反射材料层的步骤可以包括通过溶液方法、湿化学方法、气相沉积或者溅射来沉积反射材料。溶液方法包括喷涂、浸渍、电镀；湿化学方法包括混合葡萄糖和硝酸银溶液；气相沉积包括物理气相沉积、化学气相沉积以及其它气相沉积过程。反射材料还可以通过溅射银、铝、铂和/或其它金属来进行沉积。
本发明的第三方面提供了一种包含当前要求保护的发明的光输出耦合设备的显示器或投影仪。
当前要求保护的发明的光输出耦合设备能够有效地避免由蓝宝石衬底和荧光体颗粒产生的散射问题，导致更好的图像质量。此外，由于存在涂覆在格栅上的反射材料层，由格栅阵列引起的光吸收大大减少，由此实质上减少了由光输出耦合设备进行光提取之后输出光强度的损失。
附图说明
附图说明本发明的各个实施例，并且和说明书一起用来解释发明的原理。
图1是描绘根据当前要求保护的发明的一个实施例的光输出耦合设备的示意图；
图2是描绘根据当前要求保护的发明的一个实施例的用于制造光输出耦合设备的方法的步骤的流程图；
图3是描绘根据当前要求保护的发明的一个实施例的形成格栅的步骤的流程图；
图4是示出了根据当前要求保护的发明的一个实施例的光输出耦合设备的照片；
图5是描绘根据当前要求保护的发明的另一实施例的光输出耦合设备的示意图；
图6是示出了根据当前要求保护的发明的另一实施例的光输出耦合设备的照片；
图7是描绘根据当前要求保护的发明的一个实施例的具有光输出耦合设备的LED显示阵列的示意图；
图8A是示出了填充有红色荧光体但未安装格栅的LED显示器的照片；
图8B是示出了根据当前要求保护的发明的一个实施例的具有填充有红色荧光体的光输出耦合设备的LED显示器的照片；以及
图9是示出了根据当前要求保护的发明的一个实施例的具有填充有绿色荧光体的光输出耦合设备的LED显示器的照片。
具体实施方式
下面的实例被用来帮助说明和理解当前要求保护的发明，但无意于限制当前要求保护的发明的范围。
图1是描绘根据当前要求保护的发明的一个实施例的光输出耦合设备的示意图。光输出耦合设备11沿着从光源到显示面板的光的路径定位。光输出耦合设备11包括具有多个通道13的格栅12。格栅12被涂覆有反射材料层14。来自于指向型光源阵列并且包含许多散射光的多个光束15穿过格栅12的通道14。在穿过格栅12之后，多个光束15被转换为多个被校准(aligned)的光束16。由于在格栅上沉积有反射材料层14，光束15实质上被反射材料层13反射，这避免了光束15被格栅吸收，最终减少了输出光强度的损失，增强了光提取的性能。
优选地，格栅由硅制成，并且格栅的间距(pitch)在50至300微米的范围内。格栅的厚度可以是100至300微米。
优选地，反射材料层具有超过97％的反射率，反射材料层的厚度小于1微米。反射材料层被沉积在通道的侧壁上，由银、铝或者其它高反射性的金属制成。通道可以是正方形、矩形、圆形或者任何其它规则或不规则的形状。
优选地，指向型光源可以是，但不限于，LED、LEDoS、聚合物发光二极管(PLED)或者有机发光二极管(OLED)。
图2是描绘根据当前要求保护的发明的一个实施例的用于制造光输出耦合设备的方法的步骤的流程图。该方法包括形成格栅的步骤(201)以及在该格栅上涂覆反射材料层的步骤(202)。
图3是描绘根据当前要求保护的发明的一个实施例的形成格栅的步骤的流程图。该方法包括如下步骤：提供硅晶片(301)，用光致抗蚀剂涂覆(302)，温和烘烤(soft baking)(303)，进行掩膜对准(mask alignment)(304)，曝光(305)，显影(306)，蚀刻(307)，剥离(striping)(308)，抛光(lapping)(309)，以及切割(310)。
在格栅形成之后，可以通过溶液方法、湿化学方法、气相沉积或者溅射在格栅上涂覆反射材料层。溶液方法包括喷涂、浸渍或电镀；湿化学方法包括混合葡萄糖溶液和硝酸银溶液；气相沉积包括物理气相沉积、化学气相沉积以及其它气相沉积过程。反射材料还可以通过溅射银、铝、铂和/或其它金属而沉积在格栅上。
图4是示出了根据当前要求保护的发明的一个实施例的光输出耦合设备的照片。该光输出耦合设备包括具有高反射表面42的格栅41的阵列。
图5是描绘根据当前要求保护的发明的另一实施例的光输出耦合设备的示意图。该光输出耦合设备51包括具有多个通道53并被涂覆有反射材料层54的格栅52，以及光转换荧光体颗粒，该光转换荧光体颗粒被嵌入在聚合物中以形成聚合物复合材料57，该聚合物复合材料被填充在格栅52的通道53中。来自于指向型光源阵列并且包含大量散射光的多个光束55被光转换荧光体颗粒转换为具有更长波长的多个光束。在穿过聚合物复合材料57和通道53之后，光束55被转换为具有更长波长的被校准的光束56。由于在通道53的侧壁上沉积有反射材料层54，具有更长波长的光束实质上被反射材料层54反射，这避免了具有更长波长的光束被格栅吸收，最终减少了输出光强度的损失。
优选地，聚合物包括环氧聚合物或硅聚合物。聚合物复合材料包括重量百分比为10-50％的荧光体成分。
图6是示出了根据当前要求保护的发明的另一实施例的光输出耦合设备的照片。该光输出耦合设备包括格栅61的阵列以及包含有光转换荧光体的聚合物复合材料62。该聚合物复合物62被填充在格栅61的通道中。
图7是描绘根据当前要求保护的发明的一个实施例的具有光输出耦合设备的LED显示器的示意图。该LED显示器71包括硅活性矩阵控制器(silicon active matrix control)72，LED阵列73，以及蓝宝石衬底74。本发明的光输出耦合设备75，放置在蓝宝石衬底74的顶部，进一步包括高折射率流体层76。该高折射率流体层76被设置在蓝宝石衬底74和格栅77之间，并且被填充到蓝宝石衬底74和格栅77之间的间隙中。格栅77的多个通道由包含光转换荧光体颗粒的聚合物复合材料78填充。LED阵列73发射光束，其中一些光束被蓝宝石衬底74散射。光束被光转换荧光体颗粒进一步转换以提供更长波长的光束。在穿过格栅77之后，从LED阵列发射出的光束被转换并且对准为具有更长波长的被对准的光束79。由于折射率从蓝宝石衬底到空气逐步减少，惰性且稳定的高折射率流体层76能够进一步使蓝宝石衬底74的散射效应最小化。
优选地，高折射率流体层包括，但不限于，硅油。该高折射率流体层具有高于1.5的折射率。
图8A是示出了填充有红色荧光体但未安装格栅的LED显示器的照片。该红色荧光体与聚合物混合，该聚合物被沉积在LED显示器的LED阵列的顶部上。图8B是示出了根据当前要求保护的发明的一个实施例的具有填充有红色荧光体的光输出耦合设备的LED显示器的照片。如图8A和图8B两者所示，图8B屏幕上的图像显示比图8A的更清晰(sharper)且质量更好，表明本发明的光输出耦合设备能够解决由蓝宝石衬底以及荧光体颗粒引起的光散射问题。
图9是示出了根据当前要求保护的发明的一个实施例的具有填充有绿色荧光体的光输出耦合设备的LED显示器的照片。如图9所示，形成了清晰且清楚的图像。
根据本发明的一个实施例，红色、绿色以及黄色荧光体颗粒被分别填充到它们相应的通道中以产生白光。
虽然已经说明并描述了本发明的各个实施例，但是无意于以这些实施例来说明和描述本发明的所有可能的形式。相反，说明书中使用的词语是用来描述的词语而非限定，并且应该理解在不背离本发明的实质和范围的条件下可以进行各种改变。
Claims (20)
1.一种光输出耦合设备，用于从至少一个光源提取光，其特征在于，包括：
至少一个格栅，所述格栅具有一个或多个通道；以及
至少一个反射材料层，所述至少一个反射材料层被涂覆在所述格栅的至少一部分上，
其中，所述一个或多个通道中的至少一个被配置为允许来自所述光源的光穿过。
2.根据权利要求1所述的设备，其特征在于，所述设备沿着从所述光源到显示面板的光的路径定位。
3.根据权利要求1所述的设备，其特征在于，所述格栅的一个或多个间距在50至300微米的范围内。
4.根据权利要求1所述的设备，其特征在于，所述格栅包含硅。
5.根据权利要求1所述的设备，其特征在于，所述格栅通过光刻形成图案、随后对衬底进行化学湿法蚀刻或干法蚀刻而形成。
6.根据权利要求1所述的设备，其特征在于，所述反射材料层包含银、铝或者铂。
7.根据权利要求1所述的设备，其特征在于，所述反射材料层被涂覆在所述通道的侧壁上。
8.根据权利要求1所述的设备，其特征在于，所述反射材料层通过溶液方法、湿化学方法、气相沉积或者溅射被涂覆在所述格栅上。
9.根据权利要求8所述的设备，其特征在于，所述溶液方法包括喷涂、浸渍或电镀。
10.根据权利要求8所述的设备，其特征在于，所述湿化学方法包括混合葡萄糖溶液和硝酸银溶液。
11.根据权利要求1所述的设备，其特征在于，进一步包括至少一个高折射率流体层。
12.根据权利要求11所述的设备，其特征在于，所述高折射率流体层位于所述格栅和所述光源之间。
13.根据权利要求11所述的设备，其特征在于，所述高折射率流体层包括硅油。
14.根据权利要求1所述的设备，其特征在于，进一步包括光转换荧光体颗粒。
15.根据权利要求14所述的设备，其特征在于，所述光转换荧光体颗粒被填充在所述格栅的通道中。
16.根据权利要求15所述的设备，其特征在于，所述光转换荧光体颗粒被嵌入在聚合物复合材料中。
17.根据权利要求16所述的设备，其特征在于，所述聚合物复合材料包括重量百分比为10-50％的所述光转换荧光体颗粒。
18.根据权利要求1所述的设备，其特征在于，所述光源为指向型光源阵列。
19.根据权利要求1所述的设备，其特征在于，所述光源包括发光二极管、硅基发光二极管、聚合物发光二极管或者有机发光二极管。
20.一种显示器或投影仪，包括根据权利要求1所述的设备。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361957167P | 2013-06-26 | 2013-06-26 | |
| US61/957,167 | 2013-06-26 | ||
| US14/271,459 US9371979B2 (en) | 2013-06-26 | 2014-05-07 | Method and hardware to enhance light out-coupling |
| US14/271,459 | 2014-05-07 |
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Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9371979B2 (zh) |
| EP (1) | EP2819189B1 (zh) |
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| HK (1) | HK1200593A1 (zh) |
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| CN108511623A (zh) * | 2018-03-30 | 2018-09-07 | 京东方科技集团股份有限公司 | 光取出结构、显示屏体及其制作方法、显示装置 |
| CN110824820A (zh) * | 2018-08-08 | 2020-02-21 | 精工爱普生株式会社 | 波长转换元件、光源装置和投影仪 |
| CN111201617A (zh) * | 2019-12-16 | 2020-05-26 | 重庆康佳光电技术研究院有限公司 | 一种发光二极管芯片及其制备方法 |
| WO2022042187A1 (zh) * | 2020-08-24 | 2022-03-03 | 北京芯海视界三维科技有限公司 | 用于制作光转换层、发光器件的方法和电子装置 |
| CN114355618A (zh) * | 2022-01-05 | 2022-04-15 | Tcl华星光电技术有限公司 | 光源准直结构、背光模组及显示装置 |
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| DE102015122627A1 (de) * | 2015-05-28 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung und Tiefenerfassungssystem |
| US10304811B2 (en) | 2015-09-04 | 2019-05-28 | Hong Kong Beida Jade Bird Display Limited | Light-emitting diode display panel with micro lens array |
| US10032757B2 (en) | 2015-09-04 | 2018-07-24 | Hong Kong Beida Jade Bird Display Limited | Projection display system |
| US10177127B2 (en) | 2015-09-04 | 2019-01-08 | Hong Kong Beida Jade Bird Display Limited | Semiconductor apparatus and method of manufacturing the same |
| DE102018111417A1 (de) | 2018-05-14 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Konversionselement, optoelektronisches bauteil, verfahren zur herstellung einer vielzahl von konversionselementen, verfahren zur herstellung einer vielzahl von optoelektronischen bauteilen und verfahren zur herstellung eines optoelektronischen bauteils |
| US11740143B2 (en) * | 2020-05-28 | 2023-08-29 | Nano And Advanced Materials Institute Limited | Flexible pressure sensor array and method for fabricating the same |
| EP4360135A1 (en) * | 2021-06-25 | 2024-05-01 | Lumileds LLC | Fabrication of led arrays and led array light engines |
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| Publication number | Publication date |
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| CN104253202B (zh) | 2018-01-19 |
| US20150003056A1 (en) | 2015-01-01 |
| HK1200593A1 (zh) | 2015-08-07 |
| US9371979B2 (en) | 2016-06-21 |
| EP2819189A1 (en) | 2014-12-31 |
| EP2819189B1 (en) | 2019-11-20 |
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