CN104253201B - 发光器件封装件 - Google Patents

发光器件封装件 Download PDF

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Publication number
CN104253201B
CN104253201B CN201410211240.6A CN201410211240A CN104253201B CN 104253201 B CN104253201 B CN 104253201B CN 201410211240 A CN201410211240 A CN 201410211240A CN 104253201 B CN104253201 B CN 104253201B
Authority
CN
China
Prior art keywords
light emitting
emitting device
cavity
device package
molding member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410211240.6A
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English (en)
Chinese (zh)
Other versions
CN104253201A (zh
Inventor
朴海进
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to CN201811123475.4A priority Critical patent/CN109390451B/zh
Publication of CN104253201A publication Critical patent/CN104253201A/zh
Application granted granted Critical
Publication of CN104253201B publication Critical patent/CN104253201B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1701—Structure
    • H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Landscapes

  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201410211240.6A 2013-06-27 2014-05-19 发光器件封装件 Active CN104253201B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811123475.4A CN109390451B (zh) 2013-06-27 2014-05-19 发光器件封装件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0074209 2013-06-27
KR1020130074209A KR20150001268A (ko) 2013-06-27 2013-06-27 발광 소자 패키지

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811123475.4A Division CN109390451B (zh) 2013-06-27 2014-05-19 发光器件封装件

Publications (2)

Publication Number Publication Date
CN104253201A CN104253201A (zh) 2014-12-31
CN104253201B true CN104253201B (zh) 2018-10-30

Family

ID=51178650

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201811123475.4A Active CN109390451B (zh) 2013-06-27 2014-05-19 发光器件封装件
CN201410211240.6A Active CN104253201B (zh) 2013-06-27 2014-05-19 发光器件封装件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201811123475.4A Active CN109390451B (zh) 2013-06-27 2014-05-19 发光器件封装件

Country Status (5)

Country Link
US (1) US9356200B2 (enExample)
EP (1) EP2819186B1 (enExample)
JP (1) JP6510763B2 (enExample)
KR (1) KR20150001268A (enExample)
CN (2) CN109390451B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160038568A (ko) * 2014-09-30 2016-04-07 (주)포인트엔지니어링 복수의 곡면 캐비티를 포함하는 칩 기판
CN109196667B (zh) * 2016-03-07 2022-02-25 世迈克琉明有限公司 半导体发光元件及其制造方法
DE102016204887A1 (de) * 2016-03-23 2017-09-28 E.G.O. Elektro-Gerätebau GmbH Anzeigevorrichtung für ein Elektrogerät und Elektrogerät
KR102641336B1 (ko) 2017-09-05 2024-02-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
KR20200140792A (ko) * 2018-05-03 2020-12-16 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 발광 소자 모듈
JP7252820B2 (ja) * 2019-04-12 2023-04-05 日機装株式会社 半導体発光装置及びその製造方法
DE112020006517A5 (de) * 2020-01-13 2022-12-29 Osram Opto Semiconductors Gmbh Gehäuse, optoelektronisches halbleiterbauteil und herstellungsverfahren
US12477870B2 (en) * 2022-04-07 2025-11-18 DOMINANT Opto Technologies Sdn Bhd. Surface mountable optoelectronic device with side walls including slots filled with a laminated encapsulant material

Citations (3)

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US20080029775A1 (en) * 2006-08-02 2008-02-07 Lustrous Technology Ltd. Light emitting diode package with positioning groove
CN101427389A (zh) * 2006-04-21 2009-05-06 雷克斯爱帝斯照明股份有限公司 具有置于薄膜上的发光二极管芯片的发光二极管平台
US20090152691A1 (en) * 2007-12-18 2009-06-18 National Semiconductor Corporation Leadframe having die attach pad with delamination and crack-arresting features

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JPH09307145A (ja) * 1996-05-13 1997-11-28 Nichia Chem Ind Ltd 光半導体装置
JP4899252B2 (ja) * 2001-04-27 2012-03-21 パナソニック株式会社 発光表示装置の製造方法
CN100403051C (zh) * 2002-12-20 2008-07-16 国际商业机器公司 测量磁电阻元件中磁致伸缩的方法
CN100481535C (zh) * 2004-03-24 2009-04-22 日立电线精密株式会社 发光器件的制造方法和发光器件
JP4486451B2 (ja) 2004-09-07 2010-06-23 スタンレー電気株式会社 発光装置、その発光装置に使用するリードフレーム、及びリードフレームの製造方法
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
JP4979896B2 (ja) * 2005-04-25 2012-07-18 パナソニック株式会社 発光装置
JP2006332381A (ja) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd 発光装置
KR100755658B1 (ko) * 2006-03-09 2007-09-04 삼성전기주식회사 발광다이오드 패키지
JP2007281146A (ja) * 2006-04-05 2007-10-25 Sharp Corp 半導体発光装置
DE102007021904A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung mit Gehäusekörper
KR101526567B1 (ko) * 2008-05-07 2015-06-10 엘지이노텍 주식회사 발광 다이오드 패키지
CN101599517B (zh) * 2008-06-03 2011-07-27 财团法人工业技术研究院 具静电保护的发光二极管封装结构及其制作方法
US8575646B1 (en) * 2009-06-11 2013-11-05 Applied Lighting Solutions, LLC Creating an LED package with optical elements by using controlled wetting
DE102009031008A1 (de) 2009-06-29 2010-12-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
US8610274B2 (en) * 2010-09-14 2013-12-17 Infineon Technologies Ag Die structure, die arrangement and method of processing a die
CN103688377B (zh) * 2011-05-16 2018-06-08 日亚化学工业株式会社 发光装置及其制造方法
US8878215B2 (en) * 2011-06-22 2014-11-04 Lg Innotek Co., Ltd. Light emitting device module
JP2013030572A (ja) * 2011-07-28 2013-02-07 Sharp Corp 発光装置及び発光装置の製造方法
US9041286B2 (en) * 2013-05-29 2015-05-26 Venntis Technologies LLC Volumetric light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101427389A (zh) * 2006-04-21 2009-05-06 雷克斯爱帝斯照明股份有限公司 具有置于薄膜上的发光二极管芯片的发光二极管平台
US20080029775A1 (en) * 2006-08-02 2008-02-07 Lustrous Technology Ltd. Light emitting diode package with positioning groove
US20090152691A1 (en) * 2007-12-18 2009-06-18 National Semiconductor Corporation Leadframe having die attach pad with delamination and crack-arresting features

Also Published As

Publication number Publication date
US9356200B2 (en) 2016-05-31
CN109390451B (zh) 2022-04-05
JP6510763B2 (ja) 2019-05-08
CN109390451A (zh) 2019-02-26
EP2819186A1 (en) 2014-12-31
US20150001573A1 (en) 2015-01-01
KR20150001268A (ko) 2015-01-06
EP2819186B1 (en) 2016-04-06
CN104253201A (zh) 2014-12-31
JP2015012287A (ja) 2015-01-19

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TR01 Transfer of patent right

Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China