CN104253095B - 具有减小耦合的引线接合壁的半导体封装 - Google Patents

具有减小耦合的引线接合壁的半导体封装 Download PDF

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Publication number
CN104253095B
CN104253095B CN201410302261.9A CN201410302261A CN104253095B CN 104253095 B CN104253095 B CN 104253095B CN 201410302261 A CN201410302261 A CN 201410302261A CN 104253095 B CN104253095 B CN 104253095B
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amplifier
circuit
wire bonding
substrate
carrier
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Chinese (zh)
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CN104253095A (zh
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郭雄明
玛格丽特·希马诺夫斯基
保罗·哈特
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/19101—Disposition of discrete passive components
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
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  • Amplifiers (AREA)
CN201410302261.9A 2013-06-27 2014-06-27 具有减小耦合的引线接合壁的半导体封装 Active CN104253095B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/929,688 2013-06-27
US13/929,688 US9401342B2 (en) 2013-06-27 2013-06-27 Semiconductor package having wire bond wall to reduce coupling

Publications (2)

Publication Number Publication Date
CN104253095A CN104253095A (zh) 2014-12-31
CN104253095B true CN104253095B (zh) 2018-04-10

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US (1) US9401342B2 (enExample)
JP (1) JP6530893B2 (enExample)
CN (1) CN104253095B (enExample)

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US9607953B1 (en) * 2016-02-24 2017-03-28 Nxp Usa, Inc. Semiconductor package with isolation wall
US10249582B2 (en) 2016-12-19 2019-04-02 Nxp Usa, Inc. Radio frequency (RF) devices with resonant circuits to reduce coupling
JP2018107364A (ja) * 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置
JP6852841B2 (ja) * 2016-12-28 2021-03-31 住友電工デバイス・イノベーション株式会社 半導体装置
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