CN104253011B - 绘画装置和制造物品的方法 - Google Patents

绘画装置和制造物品的方法 Download PDF

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Publication number
CN104253011B
CN104253011B CN201410282724.XA CN201410282724A CN104253011B CN 104253011 B CN104253011 B CN 104253011B CN 201410282724 A CN201410282724 A CN 201410282724A CN 104253011 B CN104253011 B CN 104253011B
Authority
CN
China
Prior art keywords
charged particle
dose
target
substrate
particle beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410282724.XA
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English (en)
Chinese (zh)
Other versions
CN104253011A (zh
Inventor
村木真人
森田知之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN104253011A publication Critical patent/CN104253011A/zh
Application granted granted Critical
Publication of CN104253011B publication Critical patent/CN104253011B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
CN201410282724.XA 2013-06-26 2014-06-23 绘画装置和制造物品的方法 Expired - Fee Related CN104253011B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013134211 2013-06-26
JP2013-134211 2013-06-26
JP2014049317A JP6289181B2 (ja) 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法
JP2014-049317 2014-03-12

Publications (2)

Publication Number Publication Date
CN104253011A CN104253011A (zh) 2014-12-31
CN104253011B true CN104253011B (zh) 2018-04-03

Family

ID=52116007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410282724.XA Expired - Fee Related CN104253011B (zh) 2013-06-26 2014-06-23 绘画装置和制造物品的方法

Country Status (5)

Country Link
US (1) US9171698B2 (https=)
JP (1) JP6289181B2 (https=)
KR (1) KR101721070B1 (https=)
CN (1) CN104253011B (https=)
TW (1) TWI551955B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627632B2 (ja) * 2016-02-08 2020-01-08 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7002837B2 (ja) * 2016-10-26 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6665809B2 (ja) * 2017-02-24 2020-03-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7189729B2 (ja) 2018-10-30 2022-12-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法
JP7180515B2 (ja) * 2019-04-11 2022-11-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023492A (zh) * 2009-09-18 2011-04-20 纽富来科技股份有限公司 带电粒子束描画装置及其邻近效应校正方法
CN102043344A (zh) * 2009-10-15 2011-05-04 联华电子股份有限公司 曝光机台的监测方法
CN102540784A (zh) * 2010-12-20 2012-07-04 Asml荷兰有限公司 更新校准数据的方法和器件制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394237B2 (ja) * 2000-08-10 2003-04-07 株式会社日立製作所 荷電粒子ビーム露光方法及び装置
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
JP2008536331A (ja) * 2005-04-15 2008-09-04 マイクロニック レーザー システムズ アクチボラゲット 複数の露光ビームによるリソグラフィ・ツールのための方法
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5792189B2 (ja) * 2009-12-26 2015-10-07 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 複数の露光経路を利用して荷電粒子ビームリソグラフィを用いてパターンをフラクチャリングするための方法およびシステム
US20120085919A1 (en) * 2010-10-08 2012-04-12 Shinichi Kojima Apparatus and methods for pattern generation
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013165121A (ja) * 2012-02-09 2013-08-22 Canon Inc 描画装置、生成方法、プログラム及び物品の製造方法
JP6193611B2 (ja) * 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
JP6212299B2 (ja) * 2013-06-26 2017-10-11 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023492A (zh) * 2009-09-18 2011-04-20 纽富来科技股份有限公司 带电粒子束描画装置及其邻近效应校正方法
CN102043344A (zh) * 2009-10-15 2011-05-04 联华电子股份有限公司 曝光机台的监测方法
CN102540784A (zh) * 2010-12-20 2012-07-04 Asml荷兰有限公司 更新校准数据的方法和器件制造方法

Also Published As

Publication number Publication date
US20150004807A1 (en) 2015-01-01
JP6289181B2 (ja) 2018-03-07
KR101721070B1 (ko) 2017-03-29
JP2015029045A (ja) 2015-02-12
TW201502715A (zh) 2015-01-16
US9171698B2 (en) 2015-10-27
CN104253011A (zh) 2014-12-31
TWI551955B (zh) 2016-10-01
KR20150001632A (ko) 2015-01-06

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