CN104247174B - 光学泵浦垂直外腔表面发射激光设备 - Google Patents

光学泵浦垂直外腔表面发射激光设备 Download PDF

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Publication number
CN104247174B
CN104247174B CN201380021857.5A CN201380021857A CN104247174B CN 104247174 B CN104247174 B CN 104247174B CN 201380021857 A CN201380021857 A CN 201380021857A CN 104247174 B CN104247174 B CN 104247174B
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surface emitting
cavity surface
emitting laser
external cavity
pump
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Chinese (zh)
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CN104247174A (zh
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S.格罗恩博尔恩
M.米勒
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H01S3/08068—Holes; Stepped surface; Special cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
CN201380021857.5A 2012-04-26 2013-04-11 光学泵浦垂直外腔表面发射激光设备 Active CN104247174B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261638540P 2012-04-26 2012-04-26
US61/638,540 2012-04-26
PCT/IB2013/052879 WO2013160789A1 (en) 2012-04-26 2013-04-11 Optically pumped vertical external-cavity surface-emitting laser device

Publications (2)

Publication Number Publication Date
CN104247174A CN104247174A (zh) 2014-12-24
CN104247174B true CN104247174B (zh) 2018-02-16

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Country Status (7)

Country Link
US (1) US9099834B2 (enExample)
EP (1) EP2842202B1 (enExample)
JP (1) JP6154460B2 (enExample)
CN (1) CN104247174B (enExample)
BR (1) BR112014026319A2 (enExample)
RU (1) RU2623663C2 (enExample)
WO (1) WO2013160789A1 (enExample)

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RU2674061C2 (ru) 2013-10-30 2018-12-04 Конинклейке Филипс Н.В. Лазерный прибор, содержащий оптически накачиваемый лазер с протяженным резонатором
US9819144B2 (en) * 2015-05-14 2017-11-14 Apple Inc. High-efficiency vertical emitters with improved heat sinking
US10034375B2 (en) * 2015-05-21 2018-07-24 Apple Inc. Circuit substrate with embedded heat sink
US9735539B2 (en) 2015-07-20 2017-08-15 Apple Inc. VCSEL structure with embedded heat sink
DE102018113874B4 (de) * 2018-06-11 2022-12-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
US11402617B2 (en) 2018-07-12 2022-08-02 Clark Wagner System and method for generating white light for projectors
US11280988B2 (en) * 2018-09-04 2022-03-22 Omnivision Technologies, Inc. Structure light module using vertical cavity surface emitting laser array and folding optical element
EP3888204B1 (en) * 2019-02-04 2022-12-14 Apple Inc. Vertical emitters with integral microlenses
WO2020172118A1 (en) * 2019-02-19 2020-08-27 Arizona Board Of Regents On Behalf Of The University Of Arizona Efficient generation of spatially-restructurable high-order hg-modes in a laser cavity
US10881028B1 (en) 2019-07-03 2020-12-29 Apple Inc. Efficient heat removal from electronic modules
CN111146690B (zh) * 2020-01-06 2021-09-07 常州纵慧芯光半导体科技有限公司 一种激光器模组及其制备方法
WO2021231033A1 (en) 2020-05-10 2021-11-18 Apple Inc. Folded optical conjugate lens
US11710945B2 (en) 2020-05-25 2023-07-25 Apple Inc. Projection of patterned and flood illumination
US11699715B1 (en) 2020-09-06 2023-07-11 Apple Inc. Flip-chip mounting of optoelectronic chips
US11994694B2 (en) 2021-01-17 2024-05-28 Apple Inc. Microlens array with tailored sag profile
DE102021114225A1 (de) * 2021-06-01 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Beleuchtungseinrichtung
EP4199276A1 (en) * 2021-12-14 2023-06-21 Twenty-One Semiconductors GmbH Optically pumped semiconductor laser arrangement
US12313812B2 (en) 2022-09-20 2025-05-27 Apple Inc. MOE-based illumination projector
US12123589B1 (en) 2023-05-22 2024-10-22 Apple Inc. Flood projector with microlens array
CN116683268A (zh) * 2023-07-31 2023-09-01 中国科学院长春光学精密机械与物理研究所 1.3μm波段芯片级半导体/固体垂直集成被动调Q激光器

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JPH02185082A (ja) * 1989-01-12 1990-07-19 Asahi Glass Co Ltd レーザダイオート励起固体レーザ
CN1773360A (zh) * 2004-11-12 2006-05-17 南京Lg同创彩色显示系统有限责任公司 光泵浦半导体激光系统
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Also Published As

Publication number Publication date
US20150092802A1 (en) 2015-04-02
CN104247174A (zh) 2014-12-24
JP2015518282A (ja) 2015-06-25
RU2014147571A (ru) 2016-06-20
BR112014026319A2 (pt) 2017-06-27
JP6154460B2 (ja) 2017-06-28
WO2013160789A1 (en) 2013-10-31
EP2842202A1 (en) 2015-03-04
RU2623663C2 (ru) 2017-06-28
EP2842202B1 (en) 2017-08-16
US9099834B2 (en) 2015-08-04

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