CN104241444A - Solar battery main grid mask plate - Google Patents
Solar battery main grid mask plate Download PDFInfo
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- CN104241444A CN104241444A CN201410334883.XA CN201410334883A CN104241444A CN 104241444 A CN104241444 A CN 104241444A CN 201410334883 A CN201410334883 A CN 201410334883A CN 104241444 A CN104241444 A CN 104241444A
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- solar cell
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- 239000000463 material Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 208000005189 Embolism Diseases 0.000 claims description 9
- 230000002146 bilateral effect Effects 0.000 claims description 6
- 229920003023 plastic Polymers 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- HDERJYVLTPVNRI-UHFFFAOYSA-N ethene;ethenyl acetate Chemical compound C=C.CC(=O)OC=C HDERJYVLTPVNRI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A solar battery main grid mask plate is composed of bolts (200), a base plate (201), a cover plate (202) and mask strips (203). The solar battery main grid mask plate is horizontally arranged. The base plate (201) is arranged at the lower portion. The cover plate (202) is arranged on the base plate (201). The mask strips (203) are arranged inside the middle area on the cover plate (202). The number of the mask strips (203) is equal to that of main grids needed when a solar battery forms a mask. Base plate latch holes and cover plate latch holes are symmetrically distributed in the sides of the base plate (201) and the cover plate (202) in the same direction. The bolts (200) are adopted for fixing the base plate and the cover plate through the base plate latch holes and the cover plate latch holes, so that the solar battery main grid mask plate forms a hinge structure capable of being opened and closed freely.
Description
Technical field
The present invention relates to a kind of equipment preparing solar cell, particularly a kind of main grid mask plate main grid district being realized to mask.
Background technology
If adopt spraying method cvd silicon oxide organic solution at conventional solar cell front surface, silicon oxide film is decomposed to form after annealing, front surface is made to have the structure of " silica/silicon nitride " two antireflective coating, can not only conversion efficiency be improved, and the solar cell with anti-PID effect (potential induced degradation) can be prepared.But this processing method can cause the oxidized silicon parcel of solar cell main grid and cannot weld, and becomes obstacle prepared by assembly.Therefore, need to carry out mask, avoid main grid district cvd silicon oxide.
At present, the mode realizing solar cell main grid mask has photoetching process, laser method and screen mask version mode usually.Wherein photolithographic process is complicated, expensive, improves the preparation difficulty of solar cell, production cost and production cycle, and relates to repeatedly wet-chemical cleaning, easily cause cross pollution, reduces solar cell conversion efficiency; And laser method process causes solar cell melting to damage due to localized hyperthermia, improve surface recombination rate, reduce solar cell conversion efficiency.Screen mask version has advantage easy to use, simple to operate, receives much concern and favor in solar cell production process.
In solar cell is produced, screen mask version adopts polyester net or stainless (steel) wire or composite web, stretches tight on stainless steel frame or aluminium frame, then needs to make in the mode of online coating photoresists according to pattern.When adopting this screen mask version to realize mask, need thing to be deposited to be attached to solar battery surface under certain pressure condition, therefore this screen mask version normally supports the use with printing technology.Be not coated with the region of photoresists, in use procedure, thing to be deposited is attached to solar battery surface from mesh seepage under pressure; Be coated with the region of photoresists, mesh is blocked by photoresists, and thing to be deposited cannot be through, thus realize main grid mask object.
Fig. 1 is screen mask plate schematic diagram.As shown in Figure 1, by tight for stainless (steel) wire 101 on screen frame, according to figure needs, the upper photoresists 102 of place coating of mask will be needed.Use time, be not coated with the region of photoresists 102, thing to be deposited under pressure from the porose area of stainless (steel) wire 101 through and be attached to substrate 103 surface; Be coated with the region of photoresists 102, thing to be deposited to stop and cannot at substrate 103 surface deposition by photoresists 102.In use can there is deformation in this screen mask version, tension force reduces gradually, thus reduce masking effect.In order to slow down tension decay, Chinese patent 201110426112.8 adopts laser cutting stainless steel substrates to make screen mask version.Although the screen mask version of this improvement effectively can reduce deformation, improve mask plate tension force, but the method for laser burns or machine cuts is with high costs, the coarse indentation of pattern edge of the mask plate processed, and the near zone of pattern edge becomes rugged and rough or is attached with the particle of not easy to clean due to the cause of laser burns or apparatus grinding, not only cannot reach good masking effect, but also solar cell fragment can be caused, improve manufacturing cost.
In addition, screen mask version also has following deficiency: the thicknesses of layers that (1) adopts screen mask version to prepare is too large, easily cause rete to absorbing incident light, the amplitude suppressing solar cell conversion efficiency to promote, even can reduce solar cell conversion efficiency.(2) screen mask version requires that thing to be deposited has higher viscosity, if thing to be deposited is the solution prepared by water or organic solvent (as alcohol, isopropyl alcohol) etc., because solution has very strong mobility, the solution of deposition will flow towards main grid region, flood main grid, cannot reach masking effect.
Thus, for the technical process depositing strong fluidity substance at solar battery surface, designing, inventing a kind of main grid mask plate that is simple, convenient, that easily make is key point.
Summary of the invention
The object of the invention is to overcome the shortcoming of above-mentioned laser-mask, photo etched mask and screen mask version and deficiency, propose the solar cell main grid mask plate of simple, cheap, the easy making of a kind of structure.Adopt the present invention to carry out mask to the main grid of solar cell, can not pollute, without the need to carrying out the reprocessing such as wet-chemical cleaning or etching to the solar cell after mask, implementation is succinct, convenient, and technique is simple.In addition, the present invention be advantageous in that, available protecting can be carried out to main grid in liquid deposition process; avoid occurring components welding problem; and main grid mask plate of the present invention can Reusability, material therefor cheap and not yielding, ensure the control of production cost.
For achieving the above object, the present invention by the following technical solutions.
A kind of solar cell main grid of the present invention mask plate adopts the leaf hinge structure of free-open-close, is made up of, horizontal positioned embolus, base plate, cover plate and mask strip.Wherein base plate is positioned at below, and cover plate is positioned at above described base plate.Base plate and the equidirectional side of cover plate have base plate latch aperture and cover plate latch aperture, and base plate latch aperture and cover plate latch aperture are arranged symmetrically with.Embolus to be connected with cover plate latch aperture and fixed base plate and cover plate by base plate latch aperture, and formation can the loose-leaf system hinge arrangement of free-open-close.Described mask strip is arranged on the zone line on described cover plate.
Described base plate is made up of support plate and locating pin.Support plate upper surface forms smooth surface through polishing or polishing, for placing solar cell piece, is called microscope carrier.Described microscope carrier is furnished with three locating pins, and three locating pins are triangularly arranged.Locating pin exceeds microscope carrier 80 ~ 500 microns, to locate solar cell piece.There is recess the centre of described support plate side, and this recess is base plate recess.A base plate latch aperture is respectively arranged symmetrically with in the both sides of base plate recess.
The making material of described base plate is the hard material that deformation not easily occurs, and can be stainless steel, or aluminium alloy, can also be the rigid plastics of not containing metal element, as PP material, or PVDF material or PTFE material, or carbofrax material.
Described cover plate is made up of top cover and cover plate mask layer, the zone line of top cover is the top cover middle opening district of square aperture, top cover middle opening district has the intercell connector of the rectangle strip be arranged in parallel, the length of this intercell connector is identical with the length in described top cover middle opening district.The quantity of intercell connector is identical with needing the solar cell main grid quantity realizing mask, intercell connector be solar cell main grid mask plate mask strip on cover bar.In the middle of described top cover, square open area periphery is arranged to the cap recess with " L " shape structure, and the width of cap recess is more than 10mm.The side of top cover is the top cover plush copper of the semi-cylindrical hill with certain radian, is furnished with two cover plate latch aperture in top cover plush copper bilateral symmetry.Described top cover plush copper inserts base plate indent described on support plate, the base plate latch aperture that bilateral symmetry is arranged overlaps with the center line of cover plate latch aperture, described embolus inserts the base plate latch aperture and cover plate latch aperture that are arranged symmetrically with, fixed base plate and cover plate, forms the leaf hinge structure of energy free-open-close.
The making material of described top cover is the hard material that deformation not easily occurs, and can select stainless steel, also can select aluminum alloy material, also can select not containing the rigid plastics of any metallic element, as PP material, or PVDF material or PTFE material.
Described cover plate mask layer is fixedly pasted onto on the cap recess of top cover, and cap recess is L shape.The zone line of described cover plate mask layer is also a hatch frame, and the area ratio in cover plate mask layer middle opening district needs the solar cell area realizing mask slightly large: each large more than the 1mm of length and width; The area in the area ratio top cover middle opening district of open area is smaller: each little more than the 1mm of length and width, to realize the good mask to main grid.Have the intercell connector of the rectangle strip be arranged in parallel in this cover plate mask layer middle opening district, the length of this intercell connector is identical with the length in cover plate mask layer middle opening district.Intercell connector quantity and the solar cell of the open central region of described cover plate mask layer need the main grid quantity realizing mask identical.The end at these intercell connector two ends, cover plate mask layer middle opening district broadens gradually, triangular in shape, to improve the pulling force that intercell connector can bear, reduces even to avoid deformation, covers bar under solar cell main grid mask plate mask strip.The position of the intercell connector in cover plate mask layer middle opening district is corresponding with the position of the intercell connector in top cover middle opening district, after making cover plate mask layer be pasted onto described cap recess district, the intercell connector in cover plate mask layer middle opening district is just in time overlapping with the intercell connector in top cover middle opening district.Cover plate mask layer selects soft-touch, and the material being easy to fit makes, as ethene-vinyl acetate EVA material.
The mask strip of solar cell main grid mask plate of the present invention cover from above bar and under cover bar and form, wherein cover down the below that bar is positioned at mask strip, be on described cover plate mask layer in the middle of the intercell connector of open region.On cover the intercell connector that bar is described top cover middle opening district on top cover, in the top of mask strip.The width covering bar under described is wider than needing the solar cell main grid of mask, covers bar wide under above covering bar ratio.In order to strengthen the effect of main grid mask plate, also cover bar to protect down, can upper cover bar and under cover insert between bar one or more in cover bar, its width at least with under to cover bar identical, but be no more than and cover bar width.
The present invention has following beneficial effect:
(1) the present invention is applicable to solar cell research, preparation process realizes mask when solar battery surface deposit solution, and stopping solar module encapsulation main grid cannot weld;
(2) decoration structure features simple design of the present invention, prepares material price cheap, simple to operate, easy control, and without the need to carrying out extra wet-cleaned, not only avoid possible pollution, and avoid using noxious substance, effectively reduce production cost while ensuring personal safety;
(3) the present invention is easy to use, is easy to Industry Promotion.
Accompanying drawing explanation
Fig. 1 is conventional screen mask plate schematic diagram;
Fig. 2 is solar cell main grid mask plate front view of the present invention;
Fig. 3 is solar cell main grid mask plate left view of the present invention;
Fig. 4 is the base plate front view of solar cell main grid mask plate of the present invention;
Fig. 5 is the base plate left view of solar cell main grid mask plate of the present invention;
Fig. 6 is the cover plate front view of solar cell main grid mask plate of the present invention;
Fig. 7 is the top cover front view of solar cell main grid mask plate upper cover plate of the present invention;
Fig. 8 is the top cover A1-A1 ' sectional view of solar cell main grid mask plate upper cover plate of the present invention;
Fig. 9 is the top cover A2-A2 ' sectional view of solar cell main grid mask plate upper cover plate of the present invention;
Figure 10 is the top cover left view of solar cell main grid mask plate cover plate of the present invention;
Figure 11 is solar cell main grid mask plate cover plate A0-A0 ' sectional view of the present invention;
Figure 12 is the cover plate mask layer figure of solar cell main grid mask plate of the present invention;
Figure 13 is the mask strip front view of solar cell main grid mask plate of the present invention;
Figure 14 is the mask strip end view of solar cell main grid mask plate of the present invention;
Figure 15 is the mask strip end view covering bar during solar cell main grid mask plate of the present invention contains.
Embodiment
The present invention is further illustrated below in conjunction with the drawings and the specific embodiments.
Fig. 2, Figure 3 shows that solar cell main grid mask plate of the present invention.The main grid mask plate of solar cell of the present invention is made up of embolus 200, base plate 201, cover plate 202 and mask strip 203.Described solar cell main grid mask plate is installed in horizontal positioned mode.Described base plate 201 is arranged on below, and cover plate 202 is placed on above base plate 201, and base plate 201 is connected with cover plate 202 and fixing by embolus 200, and formation can the loose-leaf system hinge arrangement of free-open-close.Described mask strip 203 is arranged in the zone line on described cover plate 202, and quantity and the solar cell of described mask strip 203 need the main grid quantity realizing mask identical.Embodiment shown in Fig. 2, Fig. 3 is for realizing three main grid 156 × 156mm
2the main grid mask of crystal-silicon solar cell, shown mask strip quantity is 3.
Fig. 4, Figure 5 shows that described base plate 201.Described base plate 201 is made up of support plate 1-001 and locating pin 1-002.Described base plate 201 is based on support plate 1-001, and the upper surface of support plate 1-001 adopts the mode of polishing or meticulous polishing to make it to be formed surfacing and smooth microscope carrier 1-101.There is a base plate recess 1-102 centre of support plate 1-001 side; Two base plate latch aperture 1-103 are furnished with in the bilateral symmetry of base plate recess 1-102.
Described locating pin 1-002 has three, is triangular in shapely distributed on described microscope carrier 1-101.Locating pin 1-002 is used for the accurate location to solar cell piece.Locating pin 1-002 exceeds the plane certain distance of microscope carrier 1-101.The while of realizing pinpoint to solar cell piece to make locating pin, ensure the good masking effect of main grid mask plate, and mask plate can not be caused to damage or substrate breakage, locating pin 1-002 exceeds 80 ~ 500 microns, microscope carrier 1-101 plane.
Figure 6 shows that the cover plate 202 of solar cell main grid mask plate of the present invention.Cover plate 202 is made up of top cover 2-001 and cover plate mask layer 2-002, based on top cover 2-001.As shown in Figure 7, the zone line of top cover 2-001 is square aperture 2-101, is top cover middle opening district.Top cover middle opening district 2-101 has been arranged in parallel rectangle strip intercell connector 3-001, the length of this intercell connector is identical with the length of described top cover middle opening district 2-101, quantity and the solar cell of intercell connector 3-001 need the main grid quantity of mask identical, and the present embodiment is 3.Being provided with the groove 2-102 of L shape in the surrounding of top cover middle opening district 2-101, is top cover center recessed area.Figure 8 shows that the A1-A1 ' schematic cross-section of Fig. 7, Figure 9 shows that the A2-A2 ' schematic cross-section in Fig. 7.There is the top cover plush copper 2-103 of an arc side of described top cover 2-001, as shown in Figure 10.In the bilateral symmetry of described top cover plush copper 2-103, two cover plate latch aperture 2-104 are set.Top cover plush copper 2-103 during installation on top cover 2-001 is corresponding with the base plate recess 1-102 on base plate 201 to be placed, top cover plush copper 2-103 is placed in base plate recess 1-102, the base plate latch aperture 1-103 center line of the center line of the cover plate latch aperture 2-104 of top cover plush copper 2-103 both sides and base plate recess 1-102 both sides is overlapped, embolus 200 inserts cover plate latch aperture 2-104 and the base plate latch aperture 1-103 on both sides, fixing described base plate 201 and cover plate 202.
Figure 11 is A0-A0 ' schematic cross-section in Fig. 6.As shown in figure 11, cover plate mask layer 2-002 is fixedly pasted onto the top cover center recessed area 2-102 of the L shape of top cover 2-001.As shown in figure 12, intercell connector 3-002 is distributed with in the middle opening district 2-201 of described cover plate mask layer 2-002, intercell connector is rectangular bar, is arranged in parallel in cover plate mask layer middle opening district 2-201, and the length of this intercell connector is identical with the length of cover plate mask layer middle opening district 2-201; Quantity and the solar cell of intercell connector need the main grid quantity realizing mask identical, and the main grid quantity of the present embodiment is 3.Intercell connector 3-002 is corresponding with the position of the intercell connector 3-001 of top cover open central region 2-101 at the distributing position of cover plate mask layer open central region 2-201, makes the intercell connector 3-002 of cover plate mask layer 2-002 and the overlapped placement of intercell connector 3-001 of top cover.The intercell connector 3-002 in its cover plate mask layer middle opening district is positioned at below, and the intercell connector 3-001 in top cover middle opening district is positioned at top.Two ends at the intercell connector 3-002 two ends in described cover plate mask layer middle opening district broaden gradually, form triangle, and the maximum pull strengthening cover plate mask layer middle opening district intercell connector 3-002 can bear so that further, reduces deformation degree.The making material of described cover plate mask layer 2-002 should select the glued membrane with good fit performance, and that select in the present embodiment is ethene-vinyl acetate (EVA).
Solar cell main grid mask plate mask strip 203 of the present invention cover from above bar 3-001 and under cover bar 3-002 and form.As shown in Figure 13 and Figure 14, under cover the intercell connector that bar 3-002 is described cover plate mask layer middle opening district 2-201, under to cover the length of bar 3-002 equal with the length of cover plate mask layer middle opening district 2-201; On cover the intercell connector that bar 3-001 is described top cover middle opening district 2-101, the length above covering bar 3-001 is equal with the length of top cover middle opening district 2-101.Under cover the width 0.2 ~ 5mm larger than the width of solar cell main grid of bar 3-002, above cover bar 3-001 and cover comparatively down at least wide 1mm of bar 3-002.Quantity and the solar cell of mask strip 203 need the main grid quantity realizing mask identical, and the present embodiment is 3.In order to strengthen the result of use of solar cell main grid mask plate further, can upper cover bar 3-001 and under cover to insert in more than 1 or 1 between bar 3-002 and cover bar 3-003, as shown in figure 15.Covering bar 3-003 in described is the plastic strip with certain toughness, and the present embodiment is PVC plastic material strip.In cover bar width at least with under to cover bar 3-002 identical, or than under to cover bar 3-002 wide.In cover bar 3-003 Breadth Maximum be no more than the width covering bar 3-001.
During use, solar cell main grid mask plate horizontal positioned of the present invention is installed, base plate 201 under, and cover plate 202 is upper, and being formed can the leaf hinge result of free-open-close.Cover plate 202 is opened, then by 156 × 156mm
2crystalline silicon three main grid solar cell piece is placed on the microscope carrier 1-101 of support plate 1-001, and three the locating pin 1-002 arranged by triangularity on base plate 201 are accurately located solar cell piece, are then got togather by cover plate 202.Now the mask strip 203 of described solar cell main grid mask plate just in time covers by three main grids of location solar cell, and achieve the covering of solar cell three main grids, cover, other regions on solar cell piece surface then expose completely.Just liquid deposition can be carried out after being covered by cover plate 202.Now because solar cell main grid is hidden by mask strip 203, solution mass cannot be deposited on main grid, thus realizes the mask effect to solar cell main grid region.
Claims (7)
1. a solar cell main grid mask plate, is characterized in that being made up of embolus (200), base plate (201), cover plate (202) and mask strip (203), horizontal positioned; Described base plate (201) is arranged on below, cover plate (202) is placed on above base plate (201), base plate (201) is connected with cover plate (202) and fixing by embolus (200), and forming can the loose-leaf system hinge arrangement of free-open-close; Described mask strip (203) is arranged in the zone line on described cover plate (202), and quantity and the solar cell of described mask strip (203) need the main grid quantity realizing mask identical.
2. solar cell main grid mask plate according to claim 1, is characterized in that described base plate (201) is made up of support plate (1-001) and locating pin (1-002); The upper surface of described support plate (1-001) is microscope carrier (1-101); There is a base plate recess (1-102) centre of support plate (1-001) side, and the bilateral symmetry of base plate recess (1-102) is furnished with two base plate latch aperture (1-103); Locating pin (1-002) described in three is triangular in shape to be distributed on described microscope carrier (1-101); Locating pin (1-002) is for the location to solar cell piece; Locating pin (1-002) exceeds the plane of microscope carrier (1-101).
3. solar cell main grid mask plate according to claim 1, is characterized in that described cover plate (202) is made up of top cover (2-001) and cover plate mask layer (2-002), the zone line of top cover (2-001) is square top cover middle opening district (2-101), top cover middle opening district (2-101) is arranged with in parallel intercell connector (3-001), and the length of this intercell connector (3-001) is equal with the length of described top cover middle opening district (2-101), quantity and the solar cell of this intercell connector need the main grid quantity of mask identical, top cover middle opening district (2-101) surrounding is provided with the top cover center recessed area (2-102) of L shape, there is the top cover plush copper (2-103) of an arc side of described top cover (2-001), in the bilateral symmetry of described top cover plush copper (2-103), two cover plate latch aperture (2-104) are set, top cover plush copper (2-103) during installation on top cover (2-001) is corresponding with the base plate recess (1-102) on base plate (201) places, top cover plush copper (2-103) is placed in base plate recess (1-102), the center line of the cover plate latch aperture (2-104) of top cover plush copper (2-103) both sides is overlapped with the center line of the base plate latch aperture (1-103) of base plate recess (1-102) both sides, embolus (200) inserts cover plate latch aperture (2-104) and the base plate latch aperture (1-103) on both sides, fixing described base plate (201) and cover plate (202),
Described cover plate mask layer (2-002) is pasted onto on the top cover center recessed area (2-102) of the L shape of top cover (2-001); Be arranged in parallel in the middle opening district (2-201) of described cover plate mask layer (2-002) intercell connector (3-002), the length of this intercell connector (3-002) is identical with the length of described cover plate mask layer middle opening district (2-201), and quantity and the solar cell of this intercell connector need the main grid quantity realizing mask identical; The distributing position of the intercell connector (3-002) in cover plate mask layer middle opening district is corresponding with the position of the intercell connector (3-001) of top cover open central region (2-101), makes intercell connector (3-001) the overlapped placement of the intercell connector of cover plate mask layer (2-002) (3-002) and top cover; The intercell connector (3-002) in its cover plate mask layer middle opening district is positioned at below, and the intercell connector (3-001) in top cover middle opening district is positioned at top; Two ends of the intercell connector (3-002) in described cover plate mask layer middle opening district broaden gradually, form triangle, to strengthen the pulling force that cover plate mask layer middle opening district intercell connector (3-002) bears, reduce deformation degree.
4. solar cell main grid mask plate according to claim 3, it is characterized in that the length in described cover plate mask layer middle opening district (2-201) and wide respectively than length and roomy more than the 1mm of solar cell piece, and than the length of described top cover middle opening district (2-101) and wide little at least 1mm.
5. solar cell main grid mask plate according to claim 1, it is characterized in that described mask strip (203) cover from above bar (3-001) and under cover bar (3-002) and form; Under cover the intercell connector that bar (3-002) is described cover plate mask layer middle opening district (2-201), above cover the intercell connector that bar (3-001) is described top cover middle opening district (2-101); Under cover the width 0.2 ~ 5mm larger than the width of solar cell main grid of bar (3-002), above cover bar (3-001) and cover comparatively down at least wide 1mm of bar (3-002); Quantity and the solar cell of mask strip (203) need the main grid quantity realizing mask identical.
6. solar cell main grid mask plate according to claim 5, it is characterized in that covering on described bar (3-001) and under cover insert between bar (3-002) in cover bar (3-003); The width covering bar (3-003) in described at least with under to cover bar (3-002) equal, or than under to cover bar (3-002) wide, in cover bar (3-003) width be no more than the width covering bar (3-001).
7. solar cell main grid mask plate according to claim 1, it is characterized in that the top cover (2-001) of described base plate (201) and cover plate (202) selects stainless steel, or aluminum alloy material, or not containing metal element rigid plastics make; Described cover plate mask layer (2-002) adopts ethene-vinyl acetate to make; The making material covering bar (3-003) in described is plastics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410334883.XA CN104241444B (en) | 2014-07-15 | 2014-07-15 | Solar battery main grid mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410334883.XA CN104241444B (en) | 2014-07-15 | 2014-07-15 | Solar battery main grid mask plate |
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| Publication Number | Publication Date |
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| CN104241444A true CN104241444A (en) | 2014-12-24 |
| CN104241444B CN104241444B (en) | 2017-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410334883.XA Expired - Fee Related CN104241444B (en) | 2014-07-15 | 2014-07-15 | Solar battery main grid mask plate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106584867A (en) * | 2015-10-20 | 2017-04-26 | 三星显示有限公司 | Membrane tensile welding equipment for film deposition |
| CN107785460A (en) * | 2017-11-23 | 2018-03-09 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of mask plate for being used to prepare the heterojunction amorphous silicon layer of HIBC batteries |
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| CN201864769U (en) * | 2010-04-19 | 2011-06-15 | 潘宇强 | Metal mask plate structure for evaporating color of organic light emitting diode (OLED) display panel |
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| CN102251212A (en) * | 2011-06-13 | 2011-11-23 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser array mask device |
| US8367556B1 (en) * | 2011-12-01 | 2013-02-05 | International Business Machines Corporation | Use of an organic planarizing mask for cutting a plurality of gate lines |
| CN103219430A (en) * | 2013-05-06 | 2013-07-24 | 天威新能源控股有限公司 | Method for preparing SE (Selective Emitter) solar cell by utilizing sectional type mask graph |
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| CN201864769U (en) * | 2010-04-19 | 2011-06-15 | 潘宇强 | Metal mask plate structure for evaporating color of organic light emitting diode (OLED) display panel |
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| CN102242336A (en) * | 2011-06-24 | 2011-11-16 | 清华大学 | Film preparation method for reducing stress of hard film |
| US8367556B1 (en) * | 2011-12-01 | 2013-02-05 | International Business Machines Corporation | Use of an organic planarizing mask for cutting a plurality of gate lines |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106584867A (en) * | 2015-10-20 | 2017-04-26 | 三星显示有限公司 | Membrane tensile welding equipment for film deposition |
| CN106584867B (en) * | 2015-10-20 | 2021-03-19 | 三星显示有限公司 | Mask stretching welding device for thin film deposition |
| CN107785460A (en) * | 2017-11-23 | 2018-03-09 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of mask plate for being used to prepare the heterojunction amorphous silicon layer of HIBC batteries |
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| CN104241444B (en) | 2017-05-24 |
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