CN104237244A - Silicon ingot quality detection method - Google Patents
Silicon ingot quality detection method Download PDFInfo
- Publication number
- CN104237244A CN104237244A CN201310378602.6A CN201310378602A CN104237244A CN 104237244 A CN104237244 A CN 104237244A CN 201310378602 A CN201310378602 A CN 201310378602A CN 104237244 A CN104237244 A CN 104237244A
- Authority
- CN
- China
- Prior art keywords
- product
- rgb
- silicon ingot
- detection method
- ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a silicon ingot quality detection method. An infrared flaw-detection testing system in an existing testing technology is used for detecting and locating an impurity shadow inside a silicon briquette and forming a grey-scale map; as the RGB values of a grey-scale map in an RGB color display are the same, standard values are set, and the RGB values A of a color zone and the standard values are compared to judge the quality of a product and provide a quantitative value for the follow-up processing; when the product is unqualified, the product is required to be completely returned to be re-molten, when the product is locally unqualified, an unqualified zone can be cut and a remaining qualified part is re-utilized, and when the product is completely qualified, the whole product can be removed directly, and thus, the product can be classified into three, the appropriate corresponding strategy can be adopted for treatment, the misjudgment caused by man-made and subjective judgment can be reduced, the detection precision can be improved and the manufacturing cost can be directly reduced.
Description
Technical field
The present invention relates to the detection field of Ingot quality in photovoltaic art, specifically refer to a kind of detection method of Ingot quality.
Background technology
Solar cell may become desirable renewable substitute energy and earn widespread respect, wherein in solar cell, crystal silicon solar energy battery accounts for 90% of whole solar cell yield, wherein, prepare by polysilicon the main flow that solar cell is manufacture of solar cells instantly.
HIGH-PURITY SILICON raw material becomes polycrystal silicon ingot by directional solidification after melting, then carries out brokenly the process technologies such as side, Linear cut and obtains.Have the appearance of hard inclusions thing (i.e. impurity) in polycrystal silicon ingot, silico briquette infrared imaging can show the impurity pattern outward appearance in polycrystalline silicon ingot, controls it and is formed, thus the loss that reduction is caused by it.Present silico briquette detects operation and utilizes the impurity shade of IRB-30 infra-red inspection test macro to silico briquette inside to detect, locate, and protects wire cutting machine.Utilize infrared become image observation shade impurity, and judge its shade artificially and judge the disposal route of silico briquette with this.
Silico briquette examination criteria specifies, for shade and impurity, if paler colour, then it is qualified to be judged to be, can normally circulate; If color is deep, judge to be excised or concentrated processing according to shade impurity position and size thereof; If the silico briquette that shade impurity color is very dark, even monoblock is scrapped.
Summary of the invention
The object of the present invention is to provide a kind of detection method of Ingot quality, the error problem that the subjective consciousness solving quality testing dependence people in current silico briquette examination criteria causes, break away from the subjective consciousness that quality testing depends on people, improve the object of accuracy of detection.
Object of the present invention is achieved through the following technical solutions:
A detection method for Ingot quality, comprises the following steps:
A () utilizes the impurity shade of infra-red inspection test macro to silico briquette inside to detect, locate and form gray-scale map;
B () chooses the color lump of shaded side, utilize RGB color display to calculate its rgb value A;
C () presets RGB standard value T1, wherein, and 0≤T1≤256;
D rgb value A that step (b) obtains by () compares with the standard value in step (c), and as 0≤A≤T1, corresponding silicon ingot is substandard product; When T1 < A≤256, corresponding silicon ingot is specification product.
Preferred technical method is: in step (c), arrange two RGB standard value T1, T2, and 0≤T1 < T2≤256;
In step (d), rgb value A step (b) obtained compares with the standard value in step (c), and as 0≤A≤T1, corresponding silicon ingot is substandard product; As T1 < A < T2, corresponding silicon ingot local is defective; When T2≤A≤256, corresponding silicon ingot is specification product.
In detection method of the present invention, the impurity shade of infra-red inspection test macro to silico briquette inside in existing measuring technology is utilized to detect, location, and form gray-scale map, because gray-scale map three values in RGB color display are all identical, so, by established standards value, then product quality is judged with the rgb value A in look district compared with standard value, for the value of follow-up processing quantitative, when product is defective, need all to return melting again, when local is underproof time, underproof region can be cut, and remaining right rail is used, when whole qualified time, can directly overallly excise, thus, product can be divided into two classes or three classes, thus take most suitable relative strategy to process, not only reduce the erroneous judgement that artificial subjective judgement is brought, and improve accuracy of detection, and directly reduce manufacturing cost.
The lamplight brightness that the test macro of infra-red inspection described in step (a) uses is identical with lamplight brightness when normally producing.In order to keep the accuracy of testing, needing the brightness be set to by the lamplight brightness of infra-red inspection test macro when normally producing, so can improve accuracy substantially.
The present invention compared with prior art, has following advantage and beneficial effect:
The detection method of a kind of Ingot quality of the present invention, the impurity shade of infra-red inspection test macro to silico briquette inside in existing measuring technology is utilized to detect, location, and form gray-scale map, because gray-scale map three values in RGB color display are all identical, so, by established standards value, then product quality is judged with the rgb value A in look district compared with standard value, for the value of follow-up processing quantitative, when product is defective, need all to return melting again, when local is underproof time, underproof region can be cut, and remaining right rail is used, when whole qualified time, can directly overallly excise, thus, product can be divided into three classes, thus take most suitable relative strategy to process, not only reduce the erroneous judgement that artificial subjective judgement is brought, and improve accuracy of detection, and directly reduce manufacturing cost.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide the further understanding to the embodiment of the present invention, forms a application's part, does not form the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the silico briquette infrared image containing impurity in the embodiment of the present invention one;
The impurity gray-scale value display that Fig. 2 tests for RGB color display in the embodiment of the present invention one.
Embodiment
Clearly understand for making the object, technical solutions and advantages of the present invention, below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, and exemplary embodiment of the present invention and explanation thereof are only for explaining the present invention, not as a limitation of the invention.
Embodiment
The detection method of a kind of Ingot quality of the present invention, first (a) utilizes the impurity shade of infra-red inspection test macro to silico briquette inside to detect, locate and form gray-scale map; B () chooses the color lump of shaded side, utilize RGB color display to calculate its rgb value A; C () presets two RGB standard value T1, T2, wherein, 0≤T1 < T2≤256, rgb value test is carried out to impurity shade in various degree, what use when the lamplight brightness that when requiring to test, IRB-30 infra-red inspection test macro uses and normal production is consistent, after accumulating certain sample size, determine RGB standard value T1, the T2 of the impurity shade of silico briquette, wherein T1 is 60, T2 is 110, d rgb value A that step (b) obtains by () compares with the standard value in step (c), and when 0≤A≤60, corresponding silicon ingot is substandard product; As 60 < A < 110, corresponding silicon ingot local is defective; When 110≤A≤256, corresponding silicon ingot is specification product.
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of the present invention; the protection domain be not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. a detection method for Ingot quality, is characterized in that, comprises the following steps:
A () utilizes the impurity shade of infra-red inspection test macro to silico briquette inside to detect, locate and form gray-scale map;
B () chooses the color lump of shaded side, utilize RGB color display to calculate its rgb value A;
C () presets RGB standard value T1, wherein, and 0≤T1≤256;
D rgb value A that step (b) obtains by () compares with the standard value in step (c), and as 0≤A≤T1, corresponding silicon ingot is substandard product; When T1 < A≤256, corresponding silicon ingot is specification product.
2. the detection method of a kind of Ingot quality according to claim 1, is characterized in that: in step (c), arrange two RGB standard value T1, T2, and 0≤T1 < T2≤256;
In step (d), rgb value A step (b) obtained compares with the standard value in step (c), and as 0≤A≤T1, corresponding silicon ingot is substandard product; As T1 < A < T2, corresponding silicon ingot local is defective; When T2≤A≤256, corresponding silicon ingot is specification product.
3. the detection method of a kind of Ingot quality according to claim 1, is characterized in that: the lamplight brightness that the test macro of infra-red inspection described in step (a) uses is identical with lamplight brightness when normally producing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310378602.6A CN104237244A (en) | 2013-08-27 | 2013-08-27 | Silicon ingot quality detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310378602.6A CN104237244A (en) | 2013-08-27 | 2013-08-27 | Silicon ingot quality detection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104237244A true CN104237244A (en) | 2014-12-24 |
Family
ID=52225749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310378602.6A Pending CN104237244A (en) | 2013-08-27 | 2013-08-27 | Silicon ingot quality detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104237244A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104866975A (en) * | 2015-06-01 | 2015-08-26 | 山东大海新能源发展有限公司 | Quality evaluation method for polycrystalline silicon ingot |
| CN111307814A (en) * | 2019-11-29 | 2020-06-19 | 宜昌南玻硅材料有限公司 | Silicon block impurity detection method based on image processing |
| CN113739966A (en) * | 2021-08-05 | 2021-12-03 | 山东永聚医药科技有限公司 | Detection equipment and detection method for stress of high-molecular pre-filled syringe needle cylinder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09196859A (en) * | 1996-01-23 | 1997-07-31 | Nec Corp | Surface defect inspection device |
| CN203011849U (en) * | 2012-11-13 | 2013-06-19 | 上海太阳能工程技术研究中心有限公司 | Silicon wafer defect detecting device |
-
2013
- 2013-08-27 CN CN201310378602.6A patent/CN104237244A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09196859A (en) * | 1996-01-23 | 1997-07-31 | Nec Corp | Surface defect inspection device |
| CN203011849U (en) * | 2012-11-13 | 2013-06-19 | 上海太阳能工程技术研究中心有限公司 | Silicon wafer defect detecting device |
Non-Patent Citations (2)
| Title |
|---|
| 李艳华 等: "电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用", 《发光学报》, vol. 32, no. 4, 30 April 2001 (2001-04-30) * |
| 黄盼盼: "精硅太阳能组件缺陷的红外图像诊断研究", 《万方学位论文》, 20 September 2012 (2012-09-20) * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104866975A (en) * | 2015-06-01 | 2015-08-26 | 山东大海新能源发展有限公司 | Quality evaluation method for polycrystalline silicon ingot |
| CN104866975B (en) * | 2015-06-01 | 2018-04-24 | 山东大海新能源发展有限公司 | A kind of quality judging method of polycrystal silicon ingot |
| CN111307814A (en) * | 2019-11-29 | 2020-06-19 | 宜昌南玻硅材料有限公司 | Silicon block impurity detection method based on image processing |
| CN111307814B (en) * | 2019-11-29 | 2022-10-04 | 宜昌南玻硅材料有限公司 | Silicon block impurity detection method based on image processing |
| CN113739966A (en) * | 2021-08-05 | 2021-12-03 | 山东永聚医药科技有限公司 | Detection equipment and detection method for stress of high-molecular pre-filled syringe needle cylinder |
| CN113739966B (en) * | 2021-08-05 | 2024-05-28 | 山东永聚医药科技股份有限公司 | Polymer prefilled syringe needle cylinder stress detection equipment and detection method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102723311B (en) | Array substrate measuring method | |
| CN102795627B (en) | Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace | |
| CN103473778B (en) | Detecting method for eccentrically-inserting defect of LED luminous chip | |
| CN104574389A (en) | Battery piece chromatism selection control method based on color machine vision | |
| CN102735688A (en) | Defect detection method | |
| CN212931393U (en) | Fold detection device of battery tab | |
| CN104237244A (en) | Silicon ingot quality detection method | |
| CN109900699A (en) | Method is determined based on the degree of aging of composite insulator powdering grading | |
| CN101378092A (en) | Solar battery and component subfissure detection device and test method | |
| CN106787164A (en) | A kind of GIS buses cabin nacelle operating state monitoring system | |
| CN103743760A (en) | Circuit detection method for PCB board | |
| CN105136819A (en) | Method for detecting appearance contour of air conditioner | |
| WO2011078374A3 (en) | Solar cell inspection device, solar cell inspection method, and program | |
| CN105372261A (en) | Analysis instrument achieving reverse osmosis membrane element defective product leakage point detection and detection method | |
| CN107563990A (en) | A kind of photovoltaic cell chipping and the detection algorithm of blunt type and v-notch | |
| CN201440127U (en) | Defect detection device for solar cells and modules | |
| CN104062249B (en) | A kind of detect sige material method of band gap variation in electrochemical deposition process | |
| CN103278512A (en) | Device and method for online detection on structural damage of solar panel by utilizing microwaves | |
| CN203310371U (en) | Connector detection system based on machine vision | |
| CN105588744A (en) | Sampling method for dual-glass-assembly interior-packaging-material cross linking degree | |
| CN208127168U (en) | A kind of anti-misoperation device that the novel gaily decorated basket is put back | |
| CN104359920A (en) | Image processing method for apparent defect detection of thin-film capacitor | |
| CN103903998B (en) | The detection method of a kind of semiconductor technology and detecting system | |
| CN204842260U (en) | Solar wafer's colour difference sorting unit | |
| CN105021622A (en) | Welding rod quality detection system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141224 |
|
| RJ01 | Rejection of invention patent application after publication |