CN104206032B - 连接体的制造方法及电子部件的连接方法 - Google Patents

连接体的制造方法及电子部件的连接方法 Download PDF

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CN104206032B
CN104206032B CN201380016005.7A CN201380016005A CN104206032B CN 104206032 B CN104206032 B CN 104206032B CN 201380016005 A CN201380016005 A CN 201380016005A CN 104206032 B CN104206032 B CN 104206032B
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mentioned
join domain
electronic unit
irradiation
light
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CN104206032A (zh
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稻濑圭亮
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Dexerials Corp
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Dexerials Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Abstract

包括：经由光硬化型的粘接剂（3）将电子部件（18）配置在基板（12）上的工序；以及向粘接剂（3）照射光而进行硬化的工序，连接基板（12）和电子部件（18）的区域被分割为多个连接区域（CH1～CH5），按每个连接区域（CH1～CH5），错开开始照射光的定时而进行硬化。抑制了光硬化型粘接剂的硬化收缩，并改善了电子部件的连接不良。

Description

连接体的制造方法及电子部件的连接方法
技术领域
本发明涉及利用光硬化型的粘接剂来连接电子部件等的连接体的制造方法及利用光硬化型的粘接剂来连接电子部件等的连接方法。本申请以在日本于2012年3月23日申请的日本专利申请号特愿2012－68140为基础主张了优选权，并通过参照该申请，援引至本申请。
背景技术
一直以来，作为电视、PC监视器、便携电话、便携型游戏机、平板PC或者车载用监视器等的各种显示单元，多用液晶显示装置。近年来，在这种液晶显示装置中，从细间距化、轻量薄型化等的观点考虑，采用将液晶驱动用IC直接安装在液晶显示面板的基板上的所谓COG（chip on glass）或将形成有液晶驱动电路的柔性基板直接安装在液晶显示面板的基板上的所谓FOG（film on glass）。
例如采用了COG安装方式的液晶显示装置100，如图11所示，具有起到用于液晶显示的主要功能的液晶显示面板104，该液晶显示面板104具有由玻璃基板等构成的相互对置的二块透明基板102、103。而且，液晶显示面板104设有面板显示部107，该面板显示部107中这两透明基板102、103通过框状的密封材料105相互粘贴，并且液晶106封入到由两透明基板102、103及密封材料105围绕的空间内。
透明基板102、103在相互对置的两内侧表面，以相互交叉的方式形成有由ITO（氧化铟锡）等构成的条纹状的一对透明电极108、109。并且，两透明基板102、103通过这两透明电极108、109的该交叉部位构成了作为液晶显示的最小单元的像素。
两透明基板102、103中，一个透明基板103形成为平面尺寸比另一透明基板102大，在该形成为较大的透明基板103的边缘部103a，形成有透明电极109的端子部109a。此外，在两透明电极108、109上，形成有实施了规定的摩擦处理的取向膜111、112，以能够通过该取向膜111、112设定液晶分子的初始取向。进而，在两透明电极108、109的外侧，配置有一对偏振光板118、119，以能够通过这两偏振光板118、119设定来自背光灯等的光源120的透射光的振动方向。
在端子部109a上，经由各向异性导电膜114热压接有液晶驱动用IC115。各向异性导电膜114向热硬化型的粘结剂树脂混入了导电性粒子并做成了膜状，通过加热压接在2个导体间而以导电粒子取得导体间的电导通，用粘结剂树脂来保持导体间的机械连接。液晶驱动用IC115通过对像素选择性地施加液晶驱动电压，从而局部地改变液晶的取向而能够进行规定的液晶显示。再者，作为构成各向异性导电膜114的粘接剂，通常使用可靠性最高的热硬化性的粘接剂。
在将液晶驱动用IC115经由这种各向异性导电膜114连接到端子部109a时，首先，通过未图示的临时压接单元向透明电极109的端子部109a上临时压接各向异性导电膜114。接着，在各向异性导电膜114上承载液晶驱动用IC115之后，如图12所示利用热压接头等的热压接单元121将液晶驱动用IC115与各向异性导电膜114一起向端子部109a侧按压，同时使热压接单元121发热。通过该热压接单元121产生的发热，各向异性导电膜114起热硬化反应，由此，液晶驱动用IC115经由各向异性导电膜114粘接到端子部109a上。
但是，在使用这种各向异性导电膜的连接方法中，热加压温度高，对液晶驱动用IC115等的电子部件或透明基板103的热冲击变大。
于是，还提出了采用紫外线硬化型的粘接剂来取代使用这种热硬化型的粘接剂的各向异性导电膜114的连接方法。在使用紫外线硬化型的粘接剂的连接方法中，粘接剂受热而软化流动，加热加热止于在透明电极109的端子部109a与液晶驱动用IC115的电极间足以夹持导电性粒子的温度，通过紫外线照射来硬化粘接剂。
但是，在这种使用紫外线硬化型的粘接剂的连接方法中，随着紫外线照射进行的硬化而还发生粘接剂的收缩。因此，起因于该收缩而在夹持液晶106的透明基板103的IC连接部产生翘曲，因此，存在失去面板显示部107中透明基板102、103间的间隙的面均匀性，并且引起液晶的取向混乱、显示不匀等的不良的担忧。此外，还有因为在透明基板103的IC连接部产生的翘曲而引起液晶驱动用IC115的连接不良的担忧。
现有技术文献
专利文献
专利文献1：WO00/46315号公报。
发明内容
于是，本发明用于解决上述的课题，目的在于提供一种连接体的制造方法及电子部件的连接方法，从而利用紫外线硬化型的粘接剂来低温进行电子部件的连接，并且抑制粘接剂的硬化收缩导致的应变，并改善电子部件的连接不良。
为了解决上述的课题，本发明所涉及的连接体的制造方法，包括：经由光硬化型的粘接剂将电子部件配置在基板上的工序；以及利用多个光源向上述粘接剂照射光而进行硬化的工序，连接上述基板和上述电子部件的区域被分割成多个连接区域，被分割为多个的上述连接区域分别邻接地并列，按每个上述连接区域，个别地照射控制对应的上述光源，错开开始照射上述光的定时而进行硬化。
此外，本发明所涉及的电子部件的连接方法，包括：经由光硬化型的粘接剂将电子部件配置在基板上的工序；以及利用多个光源向上述粘接剂照射光而进行硬化的工序，连接上述基板和上述电子部件的区域被分割为多个连接区域，被分割为多个的所述连接区域分别邻接地并列，按每个上述连接区域，个别地照射控制对应的所述光源，错开开始照射上述光的定时而进行硬化。
依据本发明，通过错开光照射的定时，各连接区域的每一个开始硬化的定时有所不同，能够依次吸收各连接区域中硬化收缩造成的应变的同时，谋求电子部件与基板的连接。
附图说明
图1是示出适用了本发明的安装工序的截面图；
图2是示出各向异性导电膜的截面图；
图3是示出电子部件及玻璃基板连接而形成的连接区域的立体图；
图4A～D示出适用了本发明的开始紫外线照射的定时的平面图；
图5A及图5B是示出本发明的其他实施方式的平面图；
图6A～图6E是示出本发明的其他实施方式的平面图；
图7A～图7C是示出本发明的其他实施方式的平面图；
图8是示出本发明的其他实施方式的平面图；
图9是用于说明实施例及比较例所涉及的玻璃基板的翘曲的测定方法的图；
图10是用于说明实施例及比较例所涉及的导通电阻的测定方法的图；
图11是示出现有的液晶显示面板的截面图；
图12是示出现有的液晶显示面板的COG安装工序的截面图。
具体实施方式
以下，参照附图，详细说明适用了本发明的连接体的制造方法及连接方法。此外，本发明并不仅限于以下的实施方式，显然在不脱离本发明的主旨的范围内能够进行各种变更。此外，附图是示意性的，各尺寸的比例等有不同于现实的情况。具体尺寸等应该参考以下的说明进行判断。此外，应当理解到附图相互之间也包含彼此尺寸的关系或比例不同的部分。
以下，作为连接对象物及被连接对象物，以在基板连接电子部件的情况为例进行说明，但是本技术也能适用于基板和电子部件的连接以外的情况。例如，进行向液晶显示面板的玻璃基板安装液晶驱动用的IC芯片的所谓COG（chip on glass）安装。该液晶显示面板10，如图1所示，由玻璃基板等构成的二块透明基板11、12对置配置，通过框状的密封材料13，这些透明基板11、12相互粘贴。并且，液晶显示面板10通过向由透明基板11、12围绕的空间内封入液晶14而形成面板显示部15。
透明基板11、12在相互对置的两内侧表面以相互交叉的方式形成有由ITO（氧化铟锡）等构成的条纹状的一对透明电极16、17。并且，两透明电极16、17通过这两透明电极16、17的该交叉部位构成作为液晶显示的最小单元的像素。
两透明基板11、12中，一个透明基板12形成为平面尺寸比另一透明基板11大，在该形成为较大的透明基板12的边缘部12a，设有安装液晶驱动用IC等的电子部件18的COG安装部20，此外在COG安装部20的外侧附近，设有安装液晶驱动电路所形成的柔性基板21的FOG安装部22。
再者，液晶驱动用IC或液晶驱动电路，通过对像素选择性地施加液晶驱动电压，从而局部地改变液晶的取向，以能够进行规定的液晶显示。
在各安装部20、22形成有透明电极17的端子部17a。在端子部17a上，利用各向异性导电膜1作为导电性的粘接剂连接了液晶驱动用IC等的电子部件18、柔性基板21。各向异性导电膜1含有导电性粒子4，经由导电性粒子4电连接电子部件18、柔性基板21的电极与形成在透明基板12的边缘部12a的透明电极17的端子部17a。该各向异性导电膜1为紫外线硬化型的粘接剂，通过用后述的加热按压头30进行热压接来使之流动并使导电性粒子4在端子部17a与电子部件18、柔性基板21的各电极之间压坏，利用紫外线照射器31照射紫外线，从而导电性粒子4以压坏的状态硬化。由此，各向异性导电膜1将透明基板12与电子部件18、柔性基板21电气以及机械连接。
此外，在两透明电极16、17上，形成有实施了规定的摩擦处理的取向膜24，以通过该取向膜24能够设定液晶分子的初始取向。进而，在两透明基板11、12的外侧，配置有一对偏振光板25、26，以通过这两偏振光板25、26能够设定来自背光灯等的光源（未图示）的透射光的振动方向。
［各向异性导电膜］
如图2所示，各向异性导电膜（ACF：Anisotropic Conductive Film）1通常在作为基体材料的剥离膜2上形成有含导电性粒子层3。各向异性导电膜1如图1所示，使含导电性粒子层3介于形成在液晶显示面板10的透明基板12的透明电极17与电子部件18、柔性基板21之间，从而用于连接液晶显示面板10和电子部件18或者柔性基板21，并且使之导通。
作为剥离膜2，能够使用一般在各向异性导电膜中使用的例如聚对苯二甲酸乙二醇酯膜等的基体材料。
含导电性粒子层3在粘结剂中分散有导电性粒子4。粘结剂含有膜形成树脂、硬化性树脂、硬化剂、硅烷偶联剂等，与通常的用于各向异性导电膜的粘结剂同样。
作为膜形成树脂，优选平均分子量为10000～80000左右的树脂。作为膜形成树脂，可举出苯氧基树脂、环氧树脂、改性环氧树脂、尿烷树脂等的各种树脂。其中，出于膜形成状态、连接可靠性等的观点特别优选苯氧基树脂。
作为硬化性树脂，无特别限定，可举出环氧树脂、丙烯酸树脂等。
作为环氧树脂，无特别限制，可根据目的适宜选择。作为具体例，可举出例如萘型环氧树脂、联苯型环氧树脂、酚醛清漆型环氧树脂、双酚型环氧树脂、芪型环氧树脂、三酚甲烷型环氧树脂、酚醛芳烷基型环氧树脂、萘酚型环氧树脂，二聚环戊二烯型环氧树脂、三苯基甲烷型环氧树脂等。这些可以单独或组合2种以上使用。
作为丙烯酸树脂，无特别限制，可根据目的适宜选择，作为具体例，可举出例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸异丙酯、丙烯酸异丁酯、环氧丙烯酸酯、二丙烯酸乙二醇酯、二丙烯酸二乙二醇酯、三羟甲基丙烷三丙烯酸酯、二羟甲基三环葵烷二丙烯酸酯、1,4－丁二醇四丙烯酸酯、2－羟基－1,3－二丙烯酰氧基丙烷、2,2－双［4－（丙烯酰氧基甲氧基）苯基］丙烷、2,2－双［4－（丙烯酰氧基乙氧基）苯基］丙烷、二环戊烯基丙烯酸酯、三环葵基丙烯酸酯、树状（丙烯酰氧基乙基）异氰脲酸酯、尿烷丙烯酸酯、环氧丙烯酸酯等。这些可以单独或组合2种以上使用。
作为硬化剂，如果为光硬化型就无特别限制，可根据目的适宜选择，但是在硬化性树脂为环氧树脂的情况下优选阳离子类硬化剂，在硬化性树脂为丙烯酸树脂的情况下优选原子团类硬化剂。
作为阳离子类硬化剂，无特别限制，可根据目的适宜选择，能够举出例如锍盐、鎓盐等，在这些中优选芳香族锍盐。作为原子团类硬化剂，无特别限制，可根据目的适宜选择，可举出例如有机过氧化物。
作为硅烷偶联剂，可以举出环氧类、氨类、巯基/硫化物类、脲化物类等。通过添加硅烷偶联剂，提高有机材料和无机材料的界面上的粘接性。
作为导电性粒子4，可举出各向异性导电膜中使用的公知的任何导电性粒子。作为导电性粒子4，可举出例如镍、铁、铜、铝、锡、铅、铬、钴、银、金等各种金属或金属合金的粒子；在金属氧化物、碳、石墨、玻璃、陶瓷、塑料等的粒子表面涂敷金属的粒子；或者，在这些粒子表面进一步涂敷绝缘薄膜的粒子等。在向树脂粒子表面涂敷金属的粒子的情况下，作为树脂粒子，能够举出例如环氧树脂、酚醛树脂、丙烯酸树脂、丙烯腈苯乙烯（AS）树脂、苯代三聚氰胺树脂、二乙烯基苯类树脂、苯乙烯类树脂等的粒子。
［制造方法］
下面，对经由各向异性导电膜1在透明基板12的透明电极17上连接了电子部件18或柔性基板21的连接体的制造工序进行说明。首先，将各向异性导电膜1临时压接在透明电极17上。关于将各向异性导电膜1临时压接的方法，在液晶显示面板10的透明基板12的透明电极17上，以使含导电性粒子层3处于透明电极17侧的方式配置各向异性导电膜1。
并且，在将含导电性粒子层3配置在透明电极17上后，利用例如加热按压头30从剥离膜2侧对含导电性粒子层3进行加热及加压，将加热按压头30从剥离膜2分离，将剥离膜2从透明电极17上的含导电性粒子层3剥离，从而只使含导电性粒子层3临时压接在透明电极17上。利用加热按压头30进行的临时压接，以一点点压力（例如0.1MPa～2MPa左右）从透明电极17侧按压剥离膜2的上表面的同时进行加热。其中，加热温度设为不使各向异性导电膜1中的环氧树脂或丙烯酸树脂等的热硬化性树脂硬化程度的温度（例如70～100℃左右）。
接着，配置电子部件18，以使透明基板12的透明电极17和电子部件18的电极端子经由含导电性粒子层3对置。
接着，通过配置在透明基板12的下部的紫外线照射器31照射紫外线，使含导电性粒子层3硬化，将电子部件18连接到透明基板12。此时，在本连接工序中，将连接透明电极17的端子部17a与电子部件18的区域，如图3所示，分割成多个连接区域，按每个各连接区域，错开开始照射紫外线的定时而进行硬化。
连接电子部件18的电极端子与透明电极17的端子部17a的区域，被适宜分割成多个连接区域，例如在因为连接电子部件18的电极端子和透明电极17而形成多通道的情况下，按各通道的每一个进行分割。或者，连接电子部件18的电极端子和透明电极17的端子部17a的区域，也可以将整个区域按均等的面积分割成多个区域。图3中作为一例，示出在电子部件18及透明电极17的端子部17a，设有5个因连接而构成通道的第1～第5连接区域CH1～CH5的情况。第1～第5连接区域CH1～CH5，在经由各向异性导电膜1连接电子部件18的端子部和透明电极17的端子部17a的区域的整个宽度中大致均等地配置。
此外，紫外线照射器31例如对应于第1～第5连接区域CH1～CH5而设有第1～第5紫外线照射部31a～31e。紫外线照射器31可以个别地控制各紫外线照射部31a～31e的照射，由此，在本连接工序中，能够按每个连接区域，错开紫外线照射的定时而进行硬化。再者，各紫外线照射部31a～31e使得一部分照射范围与邻接的紫外线照射部重复，从而不会出现紫外线没有照射到的部分。
如此，通过错开紫外线照射的定时，使各连接区域每一个开始硬化的定时不同，能够依次吸收各连接区域中硬化收缩造成的应变的同时谋求电子部件18与透明基板12的连接。这理由认为是：按各连接区域的每一个使开始硬化的定时不同，从而当最初照射到紫外线的连接区域开始硬化并发生了粘结剂的硬化收缩时，与该连接区域邻接的紫外线未照射的连接区域中，由于粘结剂未硬化而具有流动性，所以向照射到紫外线的连接区域侧流动，从而能够吸收紫外线照射的连接区域中的硬化收缩造成的应变。
具体而言，在图3所示的第1～第5连接区域CH1～CH5中，如图4A所示，从第3紫外线照射部31c开始照射紫外线，使得从位于中央部的第3连接区域CH3起硬化。接着，在开始来自第3紫外线照射部31c的照射后，经过规定时间之后，例如1秒钟后，如图4B所示，开始从邻接的第2、第4紫外线照射部31b、31d起的紫外线照射，使第2、第4连接区域CH2、CH4硬化。最后，在开始从第2、第4紫外线照射部31b、31d起的照射后，经过规定时间之后，例如1秒钟后，如图4C所示，开始从两端的第1、第5紫外线照射部31a、31e起的紫外线照射，使第1、第5连接区域CH1、CH5硬化。
如此，依据本连接工序，通过使紫外线对第1～第5连接区域CH1～CH5的照射定时不同，由邻接的第2、第4连接区域CH2、CH4未硬化的粘结剂吸收位于中央部的第3连接区域CH3硬化时的应变，再由邻接的第1、第5连接区域CH1、CH5未硬化的粘结剂吸收第2、第4连接区域CH2、CH4硬化时的应变。
与之相对，对第1～第5连接区域CH1～CH5同时照射紫外线的情况下，各连接区域CH1～CH5同时开始硬化，因此不能吸收邻接的连接区域的应变。因而，依据本连接工序，不仅能抑制透明基板12的应变，而且能够防止电子部件18的连接不良。
此外，在对不与紫外线未照射的连接区域邻接的连接区域照射紫外线的情况下，通过照射紫外线硬化所需最小限度的照射量，能够将随着粘结剂的硬化收缩产生的应变抑制在最小范围内。
具体而言，在本连接工序中，在对最后照射紫外线的第1、第5连接区域CH1、CH5照射紫外线硬化所需最小限度的照射量之后，停止对整个连接区域CH1～CH5的紫外线照射也可。例如，紫外线照射器31在开始来自第1、第5紫外线照射部31a、31e的照射后，经过规定时间后，例如2秒钟后，如图4D所示，停止来自全部紫外线照射部31a～31e的照射。
如此，在最后紫外线照射的第1、第5连接区域CH1、CH5，不存在具备吸收硬化收缩的未硬化的粘结剂的邻接区域，因此止于照射紫外线硬化所需最小限度的照射量，从而能够将伴随粘结剂的硬化收缩产生的应变抑制在最小范围内。
再者，本连接工序中，错开开始紫外线照射的定时而进行硬化即可，不必一定要将紫外线照射的终凑齐在各连接区域CH1～CH5。
在将电子部件18连接在透明基板12的透明电极17上后，同样地进行柔性基板21安装到透明基板12的透明电极17上的所谓FOG（film on glass）安装。由此，能够制造经由各向异性导电膜1连接透明基板12和电子部件18、柔性基板21的连接体。此外，这些COG安装和FOG安装同时进行也可。
以上，以将液晶驱动用IC直接安装到液晶显示面板的玻璃基板上的COG安装以及将柔性基板直接安装到液晶显示面板的基板上的FOG安装为例进行了说明，但本技术能够用在COG安装、FOG安装以外的其他各种连接。
［其他定时1］
此外，最初开始紫外线照射的区域也可以不是1个部位，在相互不邻接的多个部位同时开始紫外线照射也可。例如，如图5A所示，从第2及第4连接区域CH2、CH4开始紫外线照射也可。
在该情况下，与照射紫外线的连接区域邻接的连接区域，例如第1、第3、第5连接区域CH1、CH3、CH5中的未硬化的粘结剂向第2及第4连接区域CH2、CH4流动，从而能够吸收紫外线照射的第2及第4连接区域CH2、CH4中的应变。此外，在该情况下，如图5B所示，在对于不与第1、第3、第5连接区域CH1、CH3、CH5这样未照射紫外线的连接区域邻接的连接区域照射紫外线的情况下，通过照射紫外线硬化所需最小限度的照射量，能够将伴随粘结剂的硬化收缩的应变抑制在最小范围内。
［其他定时2］
此外，在本连接工序中，也可以从被分割为多个的连接区域的一个端部照射紫外线。例如，如图6A所示，紫外线照射器31从第1紫外线照射部31a起开始对第1连接区域CH1的紫外线照射，在经过规定时间后，例如1秒钟后，开始从第2紫外线照射部31b对第2连接区域CH2的紫外线照射（图6B），依次每经过1秒钟时，开始对邻接的连接区域的紫外线照射，直至第5连接区域CH5（图6C～图6E）。
在该情况下，与照射紫外线的连接区域邻接的连接区域，例如与第1连接区域CH1邻接的第2连接区域CH2中未硬化的粘结剂向第1连接区域CH1流动，从而也能够吸收紫外线照射的第1连接区域CH1中的应变。此外，在该情况下，在对不与未照射紫外线的连接区域邻接的连接区域、例如连接区域CH5照射紫外线的情况下，通过照射紫外线硬化所需最小限度的照射量，也能将伴随粘结剂的硬化收缩的应变抑制在最小范围内。
［其他定时3］
此外，在本连接工序中，从被分割为多个的连接区域的多个端部照射紫外线也可。例如，如图7A所示，紫外线照射器31从第1紫外线照射部31a开始对第1连接区域CH1的紫外线照射的同时，从第5紫外线照射部31e开始对第5连接区域CH5的紫外线照射。在经过规定时间后，例如1秒钟后，如图7B所示，开始从第2紫外线照射部31b对第2连接区域CH2的紫外线照射，同时开始从第4紫外线照射部31d对第4连接区域CH4的紫外线照射。再经过规定时间后，例如1秒钟后，如图7C所示，开始从第3紫外线照射部31c对第3连接区域CH3的紫外线照射。
在该情况下，与紫外线照射的连接区域邻接的连接区域，例如与第1、第5连接区域CH1、CH5邻接的第2、第4连接区域CH2、CH4中未硬化的粘结剂向第1、第5连接区域CH1、CH5流动，从而也能吸收照射了紫外线的第1、第5连接区域CH1、CH5中的应变。此外，在该情况下，在对不与未照射紫外线的连接区域邻接的第3连接区域CH3照射紫外线的情况下，通过照射紫外线硬化所需最小限度的照射量，能够将伴随粘结剂的硬化收缩的应变抑制在最小范围内。
［其他定时4］
上述构成中将连接透明电极17的端子部17a和电子部件18的区域分割成排成一列的连接区域，但是如图8所示，分割成平面上沿XY方向分区的连接区域也可。在该情况下，具有第1～第9连接区域CH1～CH9，并且紫外线照射器31对应该第1～第9连接区域CH1～CH9而设有第1～第9紫外线照射部31a～31e。在该情况下，以从中央到端部、从端部到端部或者从多个端部到中央等的方式，按各连接区域的每一个错开开始照射紫外线的定时进行硬化，从而能够吸收伴随粘结剂的硬化收缩的应变。
此外，在上述构成中采用了紫外线硬化型的粘结剂，但是只要能够利用照射使粘结剂硬化，本发明也可以利用紫外线以外的光。此外，上述构成中，作为导电性的粘接剂对具有膜形状的各向异性导电膜1进行了说明，但是膏状的也没有问题。本申请中，将含有导电性粒子4的各向异性导电膜1等的膜状的导电性粘接膜或膏状的导电性粘接膜定义为“粘接剂”。
实施例
接着，对本发明的实施例进行说明。本实施例中，形成设有通过连接设于玻璃基板的透明电极和设于IC芯片的电极端子而构成5个通道的第1～第5连接区域CH1～CH5的连接体样品（参照图3），对于各连接体样品，利用导通电阻值（Ω）来评价IC芯片与基板的连接状态，通过测定基板的翘曲量（μm）来代替评价了显示不匀。
用于连接的各向异性导电膜，由粘接剂层构成，该粘接剂层由厚度18μm的含导电性粒子层（ACF层）构成。关于ACF层，向溶剂熔化
苯氧基树脂（YP－70：新日铁（鐵）化学株式会社制）：20质量份
液态环氧树脂（EP－828：三菱化学株式会社制）：30质量份
固态环氧树脂（YD014：）新日铁化学株式会社制）：20质量份
导电性粒子；（AUL704：积水化学工业株式会社制）：30质量份
阳离子类硬化剂（LW－S1：San-Apro（サンアプロ）株式会社制）：5质量份
而作成混合溶液，向PET膜上涂敷该混合溶液，利用干燥机干燥，成形为膜状。
层叠叠片该ACF，调整为使厚度成为18μm，从而得到了各向异性导电膜。用于实施例及比较例的各向异性导电膜，为宽度4.0mm×长度40.0mm。
作为评价要素，
外形：1.8mm×34.0mm；
厚度：0.5mm，
采用了形成导通测定用布线的评价用IC。
作为连接评价用IC的评价基体材料，采用了玻璃厚0.5mm且形成导通测定用布线的玻璃基板。
经由上述各向异性导电膜在该玻璃基板配置评价用IC，利用加热按压头进行热加压并且通过紫外线照射进行连接，从而形成了连接体样品。加热按压头的热加压面为10.0mm×40.0mm，在加热按压头的热加压面，作为缓冲材料实施了厚度0.05mm的氟化树脂加工。加热按压头的温度条件均为110℃、按压条件均为70MPa、5秒钟。
紫外线照射是在利用设定为规定温度的加热按压头开始评价用IC的热加压之后进行5秒钟的期间，按各连接区域的每一个自开始热加压起经过规定时间之后开始照射，自开始加热按压头的热加压起5秒钟后一律停止照射。自加热按压头进行的评价用IC的热加压起，紫外线照射到实施例及比较例涉及的各连接区域CH1～CH5的经过时间，如表1所示。
表1
。
实施例1中，设紫外线照射到第3连接区域CH3为止的经过时间为0秒，将紫外线照射到第1、第2、第4、第5连接区域CH1、CH2、CH4、CH5为止的经过时间均设为1秒。即，实施例1中，第3连接区域CH3的紫外线照射时间为5秒钟，第1、第2、第4、第5连接区域CH1、CH2、CH4、CH5的紫外线照射时间为4秒钟。
实施例2中，将紫外线照射到第3～第5连接区域CH3～CH5为止的经过时间设为1秒，将紫外线照射到第2连接区域CH2为止的经过时间设为2秒，将紫外线照射到第1连接区域CH1为止的经过时间设为3秒。即，实施例2中，第3～第5连接区域CH3～CH5的紫外线照射时间为4秒钟，第2连接区域CH2的紫外线照射时间为3秒钟，第1连接区域CH1的紫外线照射时间为2秒钟。
实施例3中，将紫外线照射到第3连接区域CH3为止的经过时间设为1秒，将紫外线照射到第2、第4连接区域CH2、CH4为止的经过时间设为2秒，将紫外线照射到第1、第5连接区域CH1、CH5为止的经过时间设为3秒。即，实施例3中，第3连接区域CH3的紫外线照射时间为4秒钟，第2、第4连接区域CH2、CH4的紫外线照射时间为3秒钟，第1、第5连接区域CH1、CH5的紫外线照射时间为2秒钟。
实施例4中，将紫外线照射到第1、第5连接区域CH1、CH5为止的经过时间设为1秒，将紫外线照射到第2、第4连接区域CH2、CH4为止的经过时间设为3秒，将紫外线照射到第3连接区域CH3为止的经过时间设为4秒。即，实施例4中，第1、第5连接区域CH1、CH5的紫外线照射时间为4秒钟，第2、第4连接区域CH2、CH4的紫外线照射时间为2秒钟，第3连接区域CH3的紫外线照射时间为1秒钟。
比较例1中，将紫外线照射到第1～第5连接区域CH1～CH5为止的经过时间一律设为0秒。即，比较例1中，第1～第5连接区域CH1～CH5的紫外线照射时间一律为5秒钟。
比较例2中，将紫外线照射到第1～第5连接区域CH1～CH5为止的经过时间一律设为4秒。即，比较例2中，第1～第5连接区域CH1～CH5的紫外线照射时间一律为1秒钟。
此外，在表2示出紫外线照射时间与实施例及比较例所涉及的各向异性导电膜的硬化收缩率的关系。硬化收缩率指的是伴随紫外线硬化而各向异性导电膜收缩的比例，可以如下求出：
硬化收缩率＝（粘接剂层的硬化物比重－粘接剂层的树脂液比重）/粘接剂层的硬化物比重×100。
按照以上的条件进行加热按压及紫外线照射，形成评价用IC连接在玻璃基板的连接体样品，对各样品测定了翘曲（μm）的大小以及导通电阻值（Ω）。
翘曲的测定方法采用了触针式表面粗度计（SE－3H：株式会社小阪研究所制），如图9所示，使触针41从接合体样品的玻璃基板40下表面开始扫掠，测定了评价用IC连接后的玻璃基板面的翘曲量（μm）。
导通电阻值的测定是在实施85℃、85％RH的环境下将连接体样品放置500小时的高温高湿试验后，如图10所示，将电流计A、电压计V连接到与评价用IC的凸部（bump）42连接的玻璃基板40的金属布线43，用所谓4端子法来测定流过电流1mA时的导通电阻值。将结果示于表2中。
表2
。
如表2所示，在各实施例中，错开紫外线照射第1～第5连接区域CH1～CH5的定时而进行硬化，因此由邻接的连接区域的未硬化的粘结剂吸收先进行紫外线照射的连接区域硬化时的应变。因而，依据各实施例，翘曲量也最大收敛到11.3μm，此外连接电阻最大为12.4Ω。因而，依据本连接工序，可知不仅能抑制玻璃基板的应变，而且能够防止评价用IC的连接不良。
与之相对，对于第1～第5连接区域CH1～CH5热加压的同时开始照射紫外线的比较例1中，各连接区域CH1～CH5同时开始硬化，此外紫外线照射时间也长，硬化收缩率大到2.7％，因此不能吸收邻接的连接区域的应变，翘曲量达到14.5μm，此外连接电阻也成为15.1Ω。
此外，在对第1～第5连接区域CH1～CH5热加压开始经过4秒钟后开始照射紫外线的比较例2中，硬化收缩率小到1.1％，因此翘曲被抑制到5.0μm，但是硬化不十分，高温高湿试验后的连接电阻成为110.8Ω。
观察各实施例，则从中央的第3连接区域CH3开始照射，依次向端部照射紫外线的实施例3和从端部的连接区域CH1、CH5向中央部照射紫外线的实施例4中翘曲量及连接电阻比较良好。这认为是因为照射紫外线的连接区域必定设有紫外线未照射的连接区域，因此在大多数连接区域中，能够由邻接的连接区域的未硬化的粘结剂吸收硬化时的应变。
其中，实施例3最后对端部的连接区域CH1、CH5照射紫外线，且照射时间也短、硬化收缩率也低。玻璃基板的翘曲从中央部向外侧变大，因此外侧（端部）的硬化收缩率变低的实施例3最能抑制翘曲。
标号说明
1 各向异性导电膜，2 剥离膜，3 含导电性粒子层，4 导电性粒子，10 液晶显示面板，11 透明基板，12 透明基板，13 密封材料，14 液晶，15 面板显示部，16 透明电极，17透明电极，17a 端子部，18 电子部件，20 COG安装部，21 柔性基板，22 FOG安装部，24 取向膜，25 偏振光板，26 偏振光板，30 加热按压头，31 紫外线照射器。

Claims (9)

1.一种连接体的制造方法，包括：
经由光硬化型的粘接剂将电子部件配置在基板上的工序；以及
利用多个光源向上述粘接剂照射光而进行硬化的工序，
连接上述基板和上述电子部件的区域被分割为多个连接区域，
被分割为多个的上述连接区域分别邻接地并列，
按每个上述连接区域，个别地照射控制对应的上述光源，错开开始照射上述光的定时而进行硬化，在上述基板上连接上述电子部件。
2.根据权利要求1所述的连接体的制造方法，从被分割为多个的上述连接区域的任意一个或多个开始照射上述光，
在经过规定时间后，开始向上述任意一个或多个连接区域以外的连接区域照射上述光。
3.根据权利要求2所述的连接体的制造方法，对上述光最后照射的连接区域，照射光硬化所需最小限度的照射量后，停止对整个连接区域的光照射。
4.根据权利要求2或权利要求3所述的连接体的制造方法，从被分割为多个的上述连接区域中连接上述基板和上述电子部件的区域的中央的连接区域开始照射上述光，
在经过规定时间后，开始对上述中央的连接区域以外的连接区域照射上述光。
5.根据权利要求4所述的连接体的制造方法，从上述中央的连接区域向连接上述基板和上述电子部件的区域的端部的上述连接区域阶梯式地延迟开始照射上述光的定时。
6.根据权利要求2或权利要求3所述的连接体的制造方法，从连接上述基板和上述电子部件的区域的一个或多个端部的上述连接区域开始照射上述光，
在经过规定时间后，开始对上述一个或多个端部的连接区域以外的连接区域照射上述光。
7.根据权利要求6所述的连接体的制造方法，从连接上述基板和上述电子部件的区域的一个端部的上述连接区域开始照射上述光，
向连接上述基板和上述电子部件的区域的其他端部的上述连接区域阶梯式地延迟开始照射上述光的定时。
8.根据权利要求6所述的连接体的制造方法，从连接上述基板和上述电子部件的区域的多个端部的上述连接区域开始照射上述光，
向连接上述基板和上述电子部件的区域的中央的上述连接区域阶梯式地延迟开始照射上述光的定时。
9.一种电子部件的连接方法，包括：
经由光硬化型的粘接剂将电子部件配置在基板上的工序；以及
利用多个光源向上述粘接剂照射光而进行硬化的工序，连接上述基板和上述电子部件的区域被分割为多个连接区域，
被分割为多个的所述连接区域分别邻接地并列，
按每个上述连接区域，个别地照射控制对应的所述光源，错开开始照射上述光的定时而进行硬化，在上述基板上连接上述电子部件。
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JP6324020B2 (ja) * 2013-10-28 2018-05-16 三菱電機株式会社 表示装置の製造方法および製造装置
JP2015179156A (ja) * 2014-03-19 2015-10-08 トッパン・フォームズ株式会社 情報表示媒体

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2841846B2 (ja) * 1990-11-14 1998-12-24 松下電器産業株式会社 Ｉｃ半導体素子の接合方法
JP3152449B2 (ja) * 1991-05-23 2001-04-03 松下電器産業株式会社 Ｉｃ部品のリード接合装置及び方法
JPH08281958A (ja) * 1995-04-11 1996-10-29 Canon Inc 液体噴射記録ヘッドの製造方法
CN100357382C (zh) 1999-02-08 2007-12-26 日立化成工业株式会社 用于电路连接的粘合剂、电极连接构造及电极连接方法
TW200500387A (en) * 2003-06-02 2005-01-01 Showa Denko Kk Flexible wiring board and flex-rigid wiring board
JP2005129756A (ja) * 2003-10-24 2005-05-19 Matsushita Electric Ind Co Ltd 半導体素子の接合方法
WO2005052891A1 (ja) * 2003-11-26 2005-06-09 Sharp Kabushiki Kaisha フォトマスクおよびこれを用いた貼り合わせ基板の製造方法
JP4689249B2 (ja) * 2003-11-28 2011-05-25 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2007298608A (ja) * 2006-04-28 2007-11-15 Victor Co Of Japan Ltd 光学部品の製造方法
WO2008146793A1 (ja) * 2007-05-24 2008-12-04 Sony Chemical & Information Device Corporation 電気装置、接続方法及び接着フィルム
JP2009224394A (ja) * 2008-03-13 2009-10-01 Omron Corp 接合装置および接合方法
JP2009224395A (ja) * 2008-03-13 2009-10-01 Omron Corp 接合方法および接合装置
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP5730035B2 (ja) * 2011-01-25 2015-06-03 デクセリアルズ株式会社 接続構造体の製造方法、異方性導電接続方法及び接続構造体

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