CN104202042A - Signal source based on phase lock and phase injection synchronization and power synthesis technology - Google Patents

Signal source based on phase lock and phase injection synchronization and power synthesis technology Download PDF

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Publication number
CN104202042A
CN104202042A CN201410427434.XA CN201410427434A CN104202042A CN 104202042 A CN104202042 A CN 104202042A CN 201410427434 A CN201410427434 A CN 201410427434A CN 104202042 A CN104202042 A CN 104202042A
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phase
injection
transmission line
power
nmos pipe
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高海军
孙玲玲
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Hangzhou Dianzi University
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Hangzhou Dianzi University
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Abstract

The invention relates to a high-power signal source based on a phase lock and phase injection synchronization and power synthesis technology. The high-power signal source comprises a phase-locked loop, an injection locked oscillator array and a power synthesizing unit. A stable initial signal is generated through the phase-locked loop, the relationship between an output signal phase and an injection signal phase in the injection locked voltage-controlled oscillator array is used for realizing the synchronization for output signal phases in the injection locked oscillator array through using the initial signal of the phase-locked loop as the injection signal, and finally, the power synthesizing unit realizes the power synthesis for the phase synchronization signals to realize the high-power signal source output. According to the signal source based on the phase lock and phase injection synchronization and power synthesis technology, the output power of the signal source is not limited by the output power of a single oscillator and is closely related to the number of the injection locked oscillators; the signal source based on the phase lock and phase injection synchronization and power synthesis technology enables the signal source output power to be greatly improved and lays a solid foundation for the solid-state Terahertz source practicability, Terahertz wave research and popularization.

Description

A kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique
Technical field
The invention belongs to microelectronics technical field, relate to a kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique.
Background technology
Terahertz (TeraHertz, THz) ripple refers to the electromagnetic wave of frequency in 0.1~10THz (wavelength 0.03-3mm) scope, and its wave band, between microwave and far red light, is last spectral window requiring study in electromagnetic spectrum.THz wave combines the plurality of advantages of microwave and infrared waves, there is a lot of special character, as transient state, broadband property, coherence and good penetrability etc., so Terahertz frequency range has great application prospect and unique advantage in fields such as medical imaging, high-speed radiocommunication, radar remote sensing detection, anti-terrorism drug law enforcement.
THz source is the bottleneck of realizing Terahertz application, and the THz source based on photonic propulsion and vacuum electronics has output wave length, radiant power advantages of higher, in fields such as remote imaging and non-destruction high-penetration POP researchs, is applied; But bulky, the shortcoming such as energy consumption is high, output stability is poor that have equipment needed thereby, application is restricted.Along with the progress of semiconductor technology and the quick raising of device performance, the solid-state discrete circuit of Terahertz or solid-state monolithic integrated circuit become the effective means that realizes high stable, tunable, miniaturization THz source.But be subject to active device electric breakdown strength, the highest concussion frequency f maxand the restriction of interconnection line and substrate loss etc., the power output of solid-state THz source is lower, the power in common silica-based terahertz signal source is in microwatt rank, and the maximum power of having reported is 1mW, and extremely low power output makes the application of solid-state THz source and popularization be subject to serious restriction.
Summary of the invention
The object of the invention is for the deficiencies in the prior art, propose a kind of based on high power signals source phase-locked, that inject Phase synchronization and power synthetic technique.
The present invention includes a phase-locked loop, an injection locked oscillator array and a power synthesis unit; The reference signal input of phase-locked loop is as the reference signal input of signal source, and the in-phase output end of phase-locked loop connects the in-phase injection end of injection locked oscillator array, and the reversed-phase output of phase-locked loop connects the anti-phase injection end of injection locked oscillator array; Each in-phase output end of injection locked oscillator array connects the in-phase input end of power synthesis unit, and each reversed-phase output of injection locked oscillator array connects the inverting input of power synthesis unit; The in-phase output end of power synthesis unit is as the in-phase output end of signal source, and the reversed-phase output of power synthesis unit is as the reversed-phase output of signal source.
Described injection locked oscillator array comprises two above injection locking voltage controlled oscillators; The in-phase injection end of each injection locked oscillator connects the in-phase injection end as injection locked oscillator array, and the anti-phase injection end of each injection locked oscillator connects the anti-phase phase injection end as injection locked oscillator array; The in-phase output end of the first injection locked oscillator is as the first in-phase output end of injection locked oscillator array, and the reversed-phase output of the first injection locked oscillator is as the first reversed-phase output of injection locked oscillator array; The in-phase output end of the second injection locked oscillator is as the second in-phase output end of injection locked oscillator array, and the reversed-phase output of the second injection locked oscillator is as the second reversed-phase output of injection locked oscillator array; By that analogy;
Described injection locked oscillator comprises six NMOS pipes, four inductance, two varactors and four transmission lines; One end of one end of the source electrode of the drain electrode of the drain electrode of the grid of the one NMOS pipe, the 2nd NMOS pipe, the 4th NMOS pipe, the 6th NMOS pipe, the second varactor and the second inductance connects; One end of one end of the source electrode of the drain electrode of the drain electrode of the grid of the 2nd NMOS pipe, a NMOS pipe, the 3rd NMOS pipe, the 5th NMOS pipe, the first varactor and the first inductance connects; The grid of the 3rd NMOS pipe connects the in-phase injection end of injection locked oscillator, and the grid of the 4th NMOS pipe connects the anti-phase injection end of injection locked oscillator; The source electrode of the one NMOS pipe is connected with the source electrode of the 2nd NMOS pipe, the source electrode of the source electrode of the 3rd NMOS pipe, the 4th NMOS pipe and ground connection; The other end of the first inductance is connected with the other end of the second inductance; The other end of the first varactor is connected with the other end of the second varactor, as the external voltage control end of injection locked oscillator; The grid of the 5th NMOS pipe is connected with one end of the 3rd inductance, and the grid of the 6th NMOS pipe is connected with one end of the 4th inductance; The other end of the 3rd inductance is connected with the other end of the 4th inductance, as the voltage bias end of injection locked oscillator; The drain electrode of the 5th NMOS pipe is connected with one end of the first transmission line, and the drain electrode of the 6th NMOS pipe is connected with one end of the 3rd transmission line; The other end of the first transmission line is connected with one end of the second transmission line, and as the in-phase output end of injection locked oscillator, the other end of the 3rd transmission line is connected with one end of the 4th transmission line, as the reversed-phase output of injection locked oscillator; The other end of the second transmission line is connected with the other end of the 4th transmission line, as the power input of injection locked oscillator;
The length of described the first transmission line and the 3rd transmission line is 1/2nd of Injection Signal wavelength; The length of the second transmission line and the 4th transmission line is 1/4th of Injection Signal wavelength;
Described power synthesis unit comprises four transmission lines; One end of the 5th transmission line is as the in-phase input end of power synthesis unit; The other end of the 5th transmission line is connected with one end of the 6th transmission line, as the in-phase output end of power synthesis unit; One end of the 7th transmission line is as the inverting input of power synthesis unit; The other end of the 7th transmission line is connected with one end of the 8th transmission line, as the reversed-phase output of power synthesis unit; The other end ground connection of the other end of the 6th transmission line, the 8th transmission line;
The length of the 5th described transmission line, the 6th transmission line, the 7th transmission line and the 8th transmission line is 1/4th of input signal wavelength;
The present invention produces stable initialize signal by phase-locked loop, relation in recycling injection locking voltage controlled oscillator between phase of output signal and Injection Signal phase place, take phase-locked loop initialize signal as Injection Signal, realize the synchronous of each phase of output signal in injection locked oscillator array, the power that finally utilizes power synthesis unit to realize each Phase synchronization signal synthesizes, and realizes high-power signal source output.In the present invention, the power output of signal source is no longer subject to the restriction of single oscillator power output, but closely related with the number of injection locked oscillator, the power output of signal source is improved greatly, for the research and extension application of the practical and THz wave of solid-state THz source is taken a firm foundation.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of injection locked oscillator array in Fig. 1;
Fig. 3 is the structural representation of injection locked oscillator in Fig. 2;
Fig. 4 is the structural representation of power synthesis unit in Fig. 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated.
The present invention includes a phase-locked loop 1, injection locked oscillator array 2 and a power synthesis unit 3, as shown in Figure 1; The reference signal input V of phase-locked loop 1 refreference signal input V as signal source reference, the in-phase output end V of phase-locked loop 1 osc+meet the in-phase injection end V of injection locked oscillator array 2 inj, the reversed-phase output V of phase-locked loop 1 osc-meet the anti-phase injection end V of injection locked oscillator array 2 injb; Each in-phase output end V of injection locked oscillator array 2 out, nmeet the in-phase input end V of power synthesis unit 3 in+, each reversed-phase output V of injection locked oscillator array 2 outb, nmeet the inverting input V of power synthesis unit 3 in-; The in-phase output end V of power synthesis unit 3 out+in-phase output end V as signal source source, the reversed-phase output V of power synthesis unit out-reversed-phase output V as signal source sourceb.
Described injection locked oscillator array 2 comprises two above injection locking voltage controlled oscillators (ILO) 4, as shown in Figure 2; Each injection locked oscillator ILO nin-phase injection end V inj+connection is as the in-phase injection end V of injection locked oscillator array 2 inj, each injection locked oscillator ILO nanti-phase injection end V inj-connection is as the anti-phase phase injection end V of injection locked oscillator array 2 injb; The first injection locked oscillator ILO 1in-phase output end V out+the first in-phase output end V as injection locked oscillator array 2 out, 1, the first injection locked oscillator ILO 1reversed-phase output V out-the first reversed-phase output V as injection locked oscillator array 2 outb, 1; The second injection locked oscillator ILO 2in-phase output end V out+the second in-phase output end V as injection locked oscillator array 2 out, 2, the second injection locked oscillator ILO 2reversed-phase output V out-the second reversed-phase output V as injection locked oscillator array 2 outb, 2; By that analogy;
Described injection locked oscillator 4 comprises six NMOS pipes, four inductance, two varactors and four transmission lines, as shown in Figure 3; Source electrode, the second varactor C of the drain electrode of the drain electrode of the grid of the one NMOS pipe MN1, the 2nd NMOS pipe MN2, the 4th NMOS pipe MN4, the 6th NMOS pipe MN6 var2one end and the second inductance L 2one end connect; The 2nd NMOS pipe grid of MN2 is, the drain electrode of a NMOS MN1 pipe, the 3rd NMOS pipe drain electrode of MN3, the MN5 source electrode of the 5th NMOS pipe, the first varactor C var1one end and the first inductance L 1one end connect; The grid of the 3rd NMOS pipe MN3 meets the in-phase injection end V of injection locked oscillator 4 inj+, the grid of the 4th NMOS pipe MN4 meets the anti-phase injection end V of injection locked oscillator 4 inj-; The first inductance L 1the other end and the second inductance L 2the other end be connected; The first varactor C var1the other end and the second varactor C var2the other end connect, as the external voltage control end Vtune of injection locked oscillator 4; Grid and the 3rd inductance L of the 5th NMOS pipe MN5 3one end connect, grid and the 4th inductance L of the 6th NMOS pipe MN6 4one end connect; The 3rd inductance L 3the other end and the 4th inductance L 4the other end connect, as the voltage bias end Vbias of injection locked oscillator; The drain electrode of the 5th NMOS pipe MN5 is connected with one end of the first transmission line T1, and the drain electrode of the 6th NMOS pipe MN6 is connected with one end of the 3rd transmission line T3; The other end of the first transmission line T1 is connected with one end of the second transmission line T2, as the in-phase output end V of injection locked oscillator 4 out+, the other end of the 3rd transmission line T3 is connected with one end of the 4th transmission line T4, as the reversed-phase output V of injection locked oscillator 4 out-; The other end of the second transmission line T2 is connected with the other end of the 4th transmission line T4, as the power input VDD of injection locked oscillator 4;
Described power synthesis unit 3 comprises four transmission lines, as shown in Figure 4; One end of the first transmission line T5 is as the in-phase input end Vin+ of power synthesis unit 3; The other end of the first transmission line T5 is connected with one end of the second transmission line T6, as the in-phase output end Vout+ of power synthesis unit 3; One end of the 3rd transmission line T7 is as the inverting input Vin-of power synthesis unit 3; The other end of the 3rd transmission line T7 is connected with one end of the 4th transmission line T8, as the reversed-phase output Vout-of power synthesis unit; The other end ground connection of the other end of the second transmission line T6, the 4th transmission line T8;
In carrying out the design process of above-mentioned signal source, the reference frequency output of phase-locked loop is determined by the reference frequency output of signal; The locking frequency scope of injection locked oscillator should be mated with the reference frequency output of phase-locked loop; In order to realize stable injection locking, the locking frequency scope of injection locked oscillator is greater than the reference frequency output of phase-locked loop; Meanwhile, the amplitude of pll output signal will meet the requirement of injection locked oscillator to input signal amplitude; The progression of injection locked oscillator by the requirement of signal source power output, the loss of the power output of single injection locked oscillator, signal, injection locked oscillator to common decisions such as the load effects of voltage controlled oscillator in phase-locked loop; The progression of injection locked oscillator is more, and the power of output signal is larger, but stronger to the load effect of oscillator in phase-locked loop, causes the frequency of pll output signal and power to decline;
According to the phase relation of injection locked oscillator output signal, input signal:
Wherein, Q is the quality factor of injection locked oscillator resonant tank, I oscfor the concussion electric current of oscillator, I injfor Injection Signal electric current, ω 0for injection locked oscillator, freely shake frequency, ω injfrequency for Injection Signal.Concerning a plurality of identical injection locked oscillators, its frequency of freely shaking is identical, by the inductance capacitance value of resonant network, is determined; Phase place is not quite similar, and the initial phase freely being shaken by each injection locked oscillator determines; But when the driving of same Injection Signal is issued to stable injection locking, according to its output signal homophase of above-mentioned formula, realize the phase locked function of injection locking.
Transmission line T1 in injection locking oscillator and the length of T3 are 1/2nd of Injection Signal wavelength, and the length of transmission line T2 and T4 is 1/4th of Injection Signal wavelength; In power synthesis unit, the length of transmission line T5, T6, T7 and T8 is 1/4th of input signal wavelength; In conjunction with Fig. 3 and Fig. 4, analyze, the impedance of supposing power synthesis unit output loading end is for infinitely great, and it is zero to the impedance on ground that the choosing of transmission line T5, T6, T7 and T8 length makes power synthesis unit input, realizes effective input of signal; It is infinitely great making the impedance that transmission line T6 sees into from output simultaneously, realizes effective output of signal; Concerning injection locked oscillator, the choosing of transmission line T2 and T4 length makes impedance that transmission line T2 sees into from output for infinitely great, and power synthesis unit input is zero to the impedance on ground, realizes effective output of signal; Meanwhile, the choosing of T2 and T4 length makes the drain terminal of the 5th NMOS pipe MN5, the drain terminal of the 6th NMOS pipe MN6 is zero to the impedance on ground, realizes effective transmission of signal;
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Those skilled in the art, having read after foregoing, will be all apparent for multiple modification of the present invention and replacement.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (7)

1. one kind based on signal source phase-locked, that inject Phase synchronization and power synthetic technique, comprise a phase-locked loop, an injection locked oscillator array and a power synthesis unit, it is characterized in that: the reference signal input of phase-locked loop is as the reference signal input of signal source, the in-phase output end of phase-locked loop connects the in-phase injection end of injection locked oscillator array, and the reversed-phase output of phase-locked loop connects the anti-phase injection end of injection locked oscillator array; Each in-phase output end of injection locked oscillator array connects the in-phase input end of power synthesis unit, and each reversed-phase output of injection locked oscillator array connects the inverting input of power synthesis unit; The in-phase output end of power synthesis unit is as the in-phase output end of signal source, and the reversed-phase output of power synthesis unit is as the reversed-phase output of signal source.
2. as claimed in claim 1 a kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique, it is characterized in that: described injection locked oscillator array comprises two above injection locking voltage controlled oscillators; The in-phase injection end of each injection locked oscillator connects the in-phase injection end as injection locked oscillator array, and the anti-phase injection end of each injection locked oscillator connects the anti-phase phase injection end as injection locked oscillator array.
3. as claimed in claim 1 a kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique, it is characterized in that: described power synthesis unit comprises four transmission lines; One end of the 5th transmission line is as the in-phase input end of power synthesis unit; The other end of the 5th transmission line is connected with one end of the 6th transmission line, as the in-phase output end of power synthesis unit; One end of the 7th transmission line is as the inverting input of power synthesis unit; The other end of the 7th transmission line is connected with one end of the 8th transmission line, as the reversed-phase output of power synthesis unit; The other end ground connection of the other end of the 6th transmission line, the 8th transmission line.
4. as claimed in claim 2 a kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique, it is characterized in that: described injection locked oscillator comprises six NMOS pipes, four inductance, two varactors and four transmission lines; One end of one end of the source electrode of the drain electrode of the drain electrode of the grid of the one NMOS pipe, the 2nd NMOS pipe, the 4th NMOS pipe, the 6th NMOS pipe, the second varactor and the second inductance connects; One end of one end of the source electrode of the drain electrode of the drain electrode of the grid of the 2nd NMOS pipe, a NMOS pipe, the 3rd NMOS pipe, the 5th NMOS pipe, the first varactor and the first inductance connects; The grid of the 3rd NMOS pipe connects the in-phase injection end of injection locked oscillator, and the grid of the 4th NMOS pipe connects the anti-phase injection end of injection locked oscillator; The source electrode of the one NMOS pipe is connected with the source electrode of the 2nd NMOS pipe, the source electrode of the source electrode of the 3rd NMOS pipe, the 4th NMOS pipe and ground connection.
5. the other end of the first inductance is connected with the other end of the second inductance; The other end of the first varactor is connected with the other end of the second varactor, as the external voltage control end of injection locked oscillator; The grid of the 5th NMOS pipe is connected with one end of the 3rd inductance, and the grid of the 6th NMOS pipe is connected with one end of the 4th inductance; The other end of the 3rd inductance is connected with the other end of the 4th inductance, as the voltage bias end of injection locked oscillator; The drain electrode of the 5th NMOS pipe is connected with one end of the first transmission line, and the drain electrode of the 6th NMOS pipe is connected with one end of the 3rd transmission line; The other end of the first transmission line is connected with one end of the second transmission line, and as the in-phase output end of injection locked oscillator, the other end of the 3rd transmission line is connected with one end of the 4th transmission line, as the reversed-phase output of injection locked oscillator; The other end of the second transmission line is connected with the other end of the 4th transmission line, as the power input of injection locked oscillator.
6. as claimed in claim 3 a kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique, it is characterized in that: the length of the 5th transmission line, the 6th transmission line, the 7th transmission line and the 8th transmission line is 1/4th of input signal wavelength.
7. as claimed in claim 4 a kind of based on signal source phase-locked, that inject Phase synchronization and power synthetic technique, it is characterized in that: the length of the first transmission line and the 3rd transmission line is 1/2nd of Injection Signal wavelength; The length of the second transmission line and the 4th transmission line is 1/4th of Injection Signal wavelength.
CN201410427434.XA 2014-08-27 2014-08-27 Signal source based on phase lock and phase injection synchronization and power synthesis technology Pending CN104202042A (en)

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CN106026921A (en) * 2016-05-14 2016-10-12 复旦大学 CMOS (Complementary Metal Oxide Semiconductor) integrated circuit terahertz source applied to terahertz skin imaging field
CN108429540A (en) * 2018-02-11 2018-08-21 东南大学 A kind of high-resolution digit phase generator of low-power consumption
CN108459326A (en) * 2017-02-20 2018-08-28 北京雷测科技有限公司 Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more
CN108459305A (en) * 2017-02-20 2018-08-28 北京雷测科技有限公司 Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more
CN110113004A (en) * 2019-05-31 2019-08-09 华讯方舟科技有限公司 Injection locking oscillating circuit and injection locked oscillator based on annular coupler
CN112557762A (en) * 2019-09-25 2021-03-26 天津大学 High-precision terahertz near field imaging array unit
WO2023060847A1 (en) * 2021-10-14 2023-04-20 浙江大学 Circuit and method for widening locking range of injection-locked oscillator
US11967966B2 (en) 2021-10-14 2024-04-23 Zhejiang University Circuit and method for expanding lock range of injection-locked oscillators

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CN106026921A (en) * 2016-05-14 2016-10-12 复旦大学 CMOS (Complementary Metal Oxide Semiconductor) integrated circuit terahertz source applied to terahertz skin imaging field
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CN108459326A (en) * 2017-02-20 2018-08-28 北京雷测科技有限公司 Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more
CN108459305A (en) * 2017-02-20 2018-08-28 北京雷测科技有限公司 Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more
CN108429540A (en) * 2018-02-11 2018-08-21 东南大学 A kind of high-resolution digit phase generator of low-power consumption
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CN110113004A (en) * 2019-05-31 2019-08-09 华讯方舟科技有限公司 Injection locking oscillating circuit and injection locked oscillator based on annular coupler
CN112557762A (en) * 2019-09-25 2021-03-26 天津大学 High-precision terahertz near field imaging array unit
CN112557762B (en) * 2019-09-25 2022-09-02 天津大学 High-precision terahertz near field imaging array unit
WO2023060847A1 (en) * 2021-10-14 2023-04-20 浙江大学 Circuit and method for widening locking range of injection-locked oscillator
US11967966B2 (en) 2021-10-14 2024-04-23 Zhejiang University Circuit and method for expanding lock range of injection-locked oscillators

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