CN104202042A - Signal source based on phase lock and phase injection synchronization and power synthesis technology - Google Patents
Signal source based on phase lock and phase injection synchronization and power synthesis technology Download PDFInfo
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Abstract
Description
技术领域 technical field
本发明属于微电子学技术领域，涉及一种基于锁相、注入相位同步和功率合成技术的信号源。 The invention belongs to the technical field of microelectronics, and relates to a signal source based on phase-locking, injection phase synchronization and power combining technologies.
背景技术 Background technique
太赫兹(TeraHertz, THz)波是指频率在0.1～10THz(波长0.03-3mm)范围内的电磁波，其波段介于微波与远红外光之间，是电磁波频谱中有待研究的最后一个频谱窗口。太赫兹波结合了微波和红外光波的诸多优点，具有很多特殊的性质，如瞬态性、宽带性、相干性和很好的穿透性等，因此太赫兹频段在医学成像、高速无线通信、雷达遥感探测、反恐缉毒等领域具有重大的应用前景和独特的优势。 Terahertz (TeraHertz, THz) waves refer to electromagnetic waves with a frequency in the range of 0.1-10THz (wavelength 0.03-3mm), and its wave band is between microwave and far-infrared light. Terahertz wave combines many advantages of microwave and infrared light wave, and has many special properties, such as transient, broadband, coherence and good penetration, etc. Therefore, terahertz frequency band is widely used in medical imaging, high-speed wireless communication, Radar remote sensing detection, anti-terrorism anti-drug and other fields have great application prospects and unique advantages. ``
太赫兹源是实现太赫兹应用的瓶颈，基于光子学和真空电子学的太赫兹源具有输出波长短、辐射功率高等优点，在远距离成像和非破坏高穿透波普研究等领域得到应用；但存在所需设备的体积庞大、能耗高、输出稳定性差等缺点，应用领域受到限制。随着半导体工艺的进步和器件性能的快速提高，太赫兹固态分立电路或固态单片集成电路成为实现高稳定、可调谐、小型化太赫兹源的有效方式。但受有源器件击穿电压、最高震荡频率fmax及互连线和衬底损耗等的限制，固态太赫兹源的输出功率较低，通常硅基太赫兹信号源的功率在微瓦级别，已报道的最大功率为1mW，极低的输出功率使固态太赫兹源的应用和推广受到了严重的限制。 The terahertz source is the bottleneck in the realization of terahertz applications. The terahertz source based on photonics and vacuum electronics has the advantages of short output wavelength and high radiation power, and has been applied in the fields of long-distance imaging and non-destructive high-penetration wave research; However, there are disadvantages such as bulky equipment required, high energy consumption, poor output stability, etc., and the application field is limited. With the advancement of semiconductor technology and the rapid improvement of device performance, terahertz solid-state discrete circuits or solid-state monolithic integrated circuits have become an effective way to realize highly stable, tunable, and miniaturized terahertz sources. However, limited by the breakdown voltage of active devices, the highest oscillation frequency f max , and the loss of interconnection lines and substrates, the output power of solid-state terahertz sources is low. Usually, the power of silicon-based terahertz signal sources is at the microwatt level. The reported maximum power is 1mW, and the extremely low output power severely restricts the application and promotion of solid-state terahertz sources.
发明内容 Contents of the invention
本发明的目的是针对现有技术的不足，提出一种基于锁相、注入相位同步和功率合成技术的高功率信号源。 The purpose of the present invention is to propose a high-power signal source based on phase-locking, injection phase synchronization and power combining technologies to address the deficiencies of the prior art.
本发明包括一个锁相环、一个注入锁定振荡器阵列和一个功率合成单元；锁相环的参考信号输入端作为信号源的参考信号输入端，锁相环的同相输出端接注入锁定振荡器阵列的同相注入端，锁相环的反相输出端接注入锁定振荡器阵列的反相注入端；注入锁定振荡器阵列的各同相输出端接功率合成单元的同相输入端，注入锁定振荡器阵列的各反相输出端接功率合成单元的反相输入端；功率合成单元的同相输出端作为信号源的同相输出端，功率合成单元的反相输出端作为信号源的反相输出端。 The invention comprises a phase-locked loop, an injection-locked oscillator array and a power combining unit; the reference signal input terminal of the phase-locked loop is used as the reference signal input terminal of the signal source, and the non-phase output terminal of the phase-locked loop is connected with the injection-locked oscillator array The non-inverting injection terminal of the phase-locked loop is connected to the inverting injection terminal of the injection-locked oscillator array; the non-inverted output terminals of the injection-locked oscillator array are connected to the non-inverted input terminal of the power synthesis unit, and the injection-locked oscillator array Each inverting output terminal is connected to the inverting input terminal of the power combining unit; the non-inverting output terminal of the power combining unit is used as the non-inverting output terminal of the signal source, and the inverting output terminal of the power combining unit is used as the inverting output terminal of the signal source.
所述注入锁定振荡器阵列包括两个以上注入锁定压控振荡器；各注入锁定振荡器的同相注入端连接作为注入锁定振荡器阵列的同相注入端，各注入锁定振荡器的反相注入端连接作为注入锁定振荡器阵列的反相相注入端；第一注入锁定振荡器的同相输出端作为注入锁定振荡器阵列的第一同相输出端，第一注入锁定振荡器的反相输出端作为注入锁定振荡器阵列的第一反相输出端；第二注入锁定振荡器的同相输出端作为注入锁定振荡器阵列的第二同相输出端，第二注入锁定振荡器的反相输出端作为注入锁定振荡器阵列的第二反相输出端；以此类推； The injection-locked oscillator array includes more than two injection-locked voltage-controlled oscillators; the non-inverted injection terminal of each injection-locked oscillator is connected as the non-inverted injection terminal of the injection-locked oscillator array, and the inverting injection terminal of each injection-locked oscillator is connected to As the inverting injection terminal of the injection-locked oscillator array; the non-inverting output terminal of the first injection-locked oscillator is used as the first non-inverting output terminal of the injection-locked oscillator array, and the inverting output terminal of the first injection-locked oscillator is used as the injection The first inverting output of the locked oscillator array; the non-inverting output of the second injection-locked oscillator as the second non-inverting output of the injection-locked oscillator array, and the inverting output of the second injection-locked oscillator as the injection-locked oscillation The second inverting output terminal of the device array; and so on;
所述注入锁定振荡器包括六个NMOS管、四个电感、两个变容管及四根传输线；第一NMOS管的栅极、第二NMOS管的漏极、第四NMOS管的漏极、第六NMOS管的源极、第二变容管的一端及第二电感的一端连接；第二NMOS管的栅极、第一NMOS管的漏极、第三NMOS管的漏极、第五NMOS管的源极、第一变容管的一端及第一电感的一端连接；第三NMOS管的栅极接注入锁定振荡器的同相注入端，第四NMOS管的栅极接注入锁定振荡器的反相注入端；第一NMOS管的源极与第二NMOS管的源极、第三NMOS管的源极、第四NMOS管的源极连接并接地；第一电感的另一端与第二电感的另一端相连；第一变容管的另一端与第二变容管的另一端连接，作为注入锁定振荡器的外部电压控制端；第五NMOS管的栅极与第三电感的一端连接，第六NMOS管的栅极与第四电感的一端连接；第三电感的另一端与第四电感的另一端连接，作为注入锁定振荡器的电压偏置端；第五NMOS管的漏极与第一传输线的一端连接，第六NMOS管的漏极与第三传输线的一端连接；第一传输线的另一端与第二传输线的一端连接，作为注入锁定振荡器的同相输出端，第三传输线的另一端与第四传输线的一端连接，作为注入锁定振荡器的反相输出端；第二传输线的另一端与第四传输线的另一端连接，作为注入锁定振荡器的电源输入端； The injection-locked oscillator includes six NMOS transistors, four inductors, two varactors, and four transmission lines; the gate of the first NMOS transistor, the drain of the second NMOS transistor, the drain of the fourth NMOS transistor, The source of the sixth NMOS transistor, one end of the second varactor, and one end of the second inductance are connected; the gate of the second NMOS transistor, the drain of the first NMOS transistor, the drain of the third NMOS transistor, the fifth NMOS The source of the tube, one end of the first varactor and one end of the first inductor are connected; the grid of the third NMOS tube is connected to the non-inverting injection port of the injection-locked oscillator, and the grid of the fourth NMOS tube is connected to the injection-locked oscillator. Inverting injection terminal; the source of the first NMOS transistor is connected to the source of the second NMOS transistor, the source of the third NMOS transistor, and the source of the fourth NMOS transistor and grounded; the other end of the first inductor is connected to the second inductor The other end of the first varactor is connected to the other end of the second varactor as an external voltage control terminal of the injection-locked oscillator; the gate of the fifth NMOS transistor is connected to one end of the third inductor, The gate of the sixth NMOS transistor is connected to one end of the fourth inductance; the other end of the third inductance is connected to the other end of the fourth inductance as a voltage bias end of the injection-locked oscillator; the drain of the fifth NMOS transistor is connected to the second end of the fourth inductance. One end of a transmission line is connected, the drain of the sixth NMOS transistor is connected to one end of the third transmission line; the other end of the first transmission line is connected to one end of the second transmission line as the non-inverting output end of the injection-locked oscillator, and the other end of the third transmission line One end is connected to one end of the fourth transmission line as the inverting output end of the injection-locked oscillator; the other end of the second transmission line is connected to the other end of the fourth transmission line as the power input end of the injection-locked oscillator;
所述第一传输线和第三传输线的长度为注入信号波长的二分之一；第二传输线和第四传输线的长度为注入信号波长的四分之一； The length of the first transmission line and the third transmission line is 1/2 of the wavelength of the injected signal; the length of the second transmission line and the fourth transmission line is 1/4 of the wavelength of the injected signal;
所述功率合成单元包括四根传输线；第五传输线的一端作为功率合成单元的同相输入端；第五传输线的另一端与第六传输线的一端连接，作为功率合成单元的同相输出端；第七传输线的一端作为功率合成单元的反相输入端；第七传输线的另一端与第八传输线的一端连接，作为功率合成单元的反相输出端；第六传输线的另一端、第八传输线的另一端接地； The power combining unit includes four transmission lines; one end of the fifth transmission line is used as the non-inverting input end of the power combining unit; the other end of the fifth transmission line is connected to one end of the sixth transmission line as the non-inverting output end of the power combining unit; the seventh transmission line One end of the power combination unit is used as the inverting input end of the power combination unit; the other end of the seventh transmission line is connected to one end of the eighth transmission line as the inverting output end of the power combination unit; the other end of the sixth transmission line and the other end of the eighth transmission line are grounded ;
所述的第五传输线、第六传输线、第七传输线和第八传输线的长度为输入信号波长的四分之一； The length of the fifth transmission line, the sixth transmission line, the seventh transmission line and the eighth transmission line is a quarter of the wavelength of the input signal;
本发明通过锁相环产生稳定的初始信号，再利用注入锁定压控振荡器中输出信号相位与注入信号相位之间的关系，以锁相环初始信号为注入信号，实现注入锁定振荡器阵列中各输出信号相位的同步，最后利用功率合成单元实现各相位同步信号的功率合成，实现高功率的信号源输出。在本发明中，信号源的输出功率不再受单个振荡器输出功率的限制，而是与注入锁定振荡器的个数密切相关，使信号源的输出功率大大提高，为固态太赫兹源的实用化和太赫兹波的研究和推广应用打下坚实基础。 The invention generates a stable initial signal through a phase-locked loop, and then utilizes the relationship between the phase of the output signal and the phase of the injected signal in the injection-locked voltage-controlled oscillator, and uses the initial signal of the phase-locked loop as the injection signal to realize the injection-locked oscillator array. The phase synchronization of each output signal, and finally, the power combination unit is used to realize the power combination of the synchronization signals of each phase, so as to realize the output of high-power signal source. In the present invention, the output power of the signal source is no longer limited by the output power of a single oscillator, but is closely related to the number of injection-locked oscillators, so that the output power of the signal source is greatly improved, which is a practical application of the solid-state terahertz source. It has laid a solid foundation for the research, promotion and application of chemical and terahertz waves.
附图说明 Description of drawings
图1为本发明的结构示意图； Fig. 1 is a structural representation of the present invention;
图2为图1中注入锁定振荡器阵列的结构示意图； FIG. 2 is a schematic structural diagram of an injection-locked oscillator array in FIG. 1;
图3为图2中注入锁定振荡器的结构示意图； FIG. 3 is a schematic structural diagram of the injection-locked oscillator in FIG. 2;
图4为图1中功率合成单元的结构示意图。 FIG. 4 is a schematic structural diagram of the power combining unit in FIG. 1 .
具体实施方式 Detailed ways
下面结合附图和具体实施例对本发明作进一步的说明。 The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
本发明包括一个锁相环1、一个注入锁定振荡器阵列2和一个功率合成单元3，如图1所示；锁相环1的参考信号输入端Vref作为信号源的参考信号输入端Vreference，锁相环1的同相输出端Vosc+接注入锁定振荡器阵列2的同相注入端Vinj，锁相环1的反相输出端Vosc-接注入锁定振荡器阵列2的反相注入端Vinjb；注入锁定振荡器阵列2的各同相输出端Vout,n接功率合成单元3的同相输入端Vin+，注入锁定振荡器阵列2的各反相输出端Voutb,n接功率合成单元3的反相输入端Vin-；功率合成单元3的同相输出端Vout+作为信号源的同相输出端Vsource，功率合成单元的反相输出端Vout-作为信号源的反相输出端Vsourceb。 The present invention comprises a phase-locked loop 1, an injection-locked oscillator array 2 and a power combining unit 3, as shown in Figure 1; The reference signal input terminal V ref of phase-locked loop 1 is as the reference signal input terminal V reference of signal source , the non-inverted output terminal V osc+ of the phase-locked loop 1 is connected to the non-inverted injection terminal V inj of the injection-locked oscillator array 2, and the inverting output terminal V osc- of the phase-locked loop 1 is connected to the inverting injection terminal V of the injection-locked oscillator array 2 injb ; each in-phase output terminal V out of the injection-locked oscillator array 2, n is connected to the in-phase input terminal V in+ of the power combining unit 3, and each inverting output terminal V outb of the injection-locked oscillator array 2 is connected to the power combining unit 3 The inverting input terminal V in- of the power synthesis unit 3; the non-inverting output terminal V out+ of the power combining unit 3 is the inverting output terminal V source of the signal source, and the inverting output terminal V out- of the power combining unit is the inverting output terminal V source of the signal source .
所述注入锁定振荡器阵列2包括两个以上注入锁定压控振荡器(ILO)4，如图2所示；各注入锁定振荡器ILOn的同相注入端Vinj+连接作为注入锁定振荡器阵列2的同相注入端Vinj，各注入锁定振荡器ILOn的反相注入端Vinj-连接作为注入锁定振荡器阵列2的反相相注入端Vinjb；第一注入锁定振荡器ILO1的同相输出端Vout+作为注入锁定振荡器阵列2的第一同相输出端Vout,1，第一注入锁定振荡器ILO1的反相输出端Vout-作为注入锁定振荡器阵列2的第一反相输出端Voutb,1；第二注入锁定振荡器ILO2的同相输出端Vout+作为注入锁定振荡器阵列2的第二同相输出端Vout,2，第二注入锁定振荡器ILO2的反相输出端Vout-作为注入锁定振荡器阵列2的第二反相输出端Voutb,2；以此类推； The injection-locked oscillator array 2 includes more than two injection-locked voltage-controlled oscillators (ILO) 4, as shown in Figure 2; the non-inverting injection terminal Vinj+ of each injection-locked oscillator ILO n is connected as the injection-locked oscillator array 2 The non-inverting injection terminal V inj of each injection - locked oscillator ILO n is connected as the inverting injection terminal V injb of the injection-locked oscillator array 2; the non-inverted output of the first injection-locked oscillator ILO 1 The terminal V out+ serves as the first non-inverting output terminal V out,1 of the injection-locked oscillator array 2, and the inverting output terminal V out- of the first injection-locked oscillator ILO 1 serves as the first inverting output terminal of the injection-locked oscillator array 2. The output terminal V outb,1 ; the non-inverting output terminal V out+ of the second injection-locked oscillator ILO 2 is used as the second non-inverting output terminal V out,2 of the injection-locked oscillator array 2 , the inverting phase of the second injection-locked oscillator ILO 2 The output terminal V out- is used as the second inverting output terminal V outb,2 of the injection-locked oscillator array 2 ; and so on;
所述注入锁定振荡器4包括六个NMOS管、四个电感、两个变容管及四根传输线,如图3所示；第一NMOS管MN1的栅极、第二NMOS管MN2的漏极、第四NMOS管MN4的漏极、第六NMOS管MN6的源极、第二变容管Cvar2的一端与第二电感L2的一端连接；第二NMOS管MN2的栅极、第一NMOS MN1管的漏极、第三NMOS管MN3的漏极、第五NMOS管的MN5源极、第一变容管Cvar1的一端及第一电感L1的一端连接；第三NMOS管MN3的栅极接注入锁定振荡器4的同相注入端Vinj+，第四NMOS管MN4的栅极接注入锁定振荡器4的反相注入端Vinj-；第一电感L1的另一端与第二电感L2的另一端相连；第一变容管Cvar1的另一端与第二变容管Cvar2的另一端连接，作为注入锁定振荡器4的外部电压控制端Vtune；第五NMOS管MN5的栅极与第三电感L3的一端连接，第六NMOS管MN6的栅极与第四电感L4的一端连接；第三电感L3的另一端与第四电感L4的另一端连接，作为注入锁定振荡器的电压偏置端Vbias；第五NMOS管MN5的漏极与第一传输线T1的一端连接，第六NMOS管MN6的漏极与第三传输线T3的一端连接；第一传输线T1的另一端与第二传输线T2的一端连接，作为注入锁定振荡器4的同相输出端Vout+，第三传输线T3的另一端与第四传输线T4的一端连接，作为注入锁定振荡器4的反相输出端Vout-；第二传输线T2的另一端与第四传输线T4的另一端连接，作为注入锁定振荡器4的电源输入端VDD； The injection-locked oscillator 4 includes six NMOS transistors, four inductors, two varactors and four transmission lines, as shown in Figure 3; the gate of the first NMOS transistor MN1, the drain of the second NMOS transistor MN2 , the drain of the fourth NMOS transistor MN4, the source of the sixth NMOS transistor MN6, one end of the second varactor C var2 is connected to one end of the second inductor L2 ; the gate of the second NMOS transistor MN2, the first NMOS The drain of the MN1 transistor, the drain of the third NMOS transistor MN3, the MN5 source of the fifth NMOS transistor, one end of the first varactor C var1 and one end of the first inductor L1 are connected; the gate of the third NMOS transistor MN3 The pole is connected to the non-inverting injection terminal V inj+ of the injection-locked oscillator 4, the gate of the fourth NMOS transistor MN4 is connected to the inverting injection terminal V inj- of the injection-locked oscillator 4; the other end of the first inductance L1 is connected to the second inductance L 2 connected to the other end; the other end of the first varactor C var1 is connected to the other end of the second varactor C var2 as the external voltage control terminal Vtune of the injection-locked oscillator 4; the gate of the fifth NMOS transistor MN5 Connected to one end of the third inductance L3 , the gate of the sixth NMOS transistor MN6 is connected to one end of the fourth inductance L4 ; the other end of the third inductance L3 is connected to the other end of the fourth inductance L4 as an injection lock The voltage bias terminal Vbias of the oscillator; the drain of the fifth NMOS transistor MN5 is connected to one end of the first transmission line T1, and the drain of the sixth NMOS transistor MN6 is connected to one end of the third transmission line T3; the other end of the first transmission line T1 It is connected with one end of the second transmission line T2 as the non-inverting output terminal V out+ of the injection-locked oscillator 4, and the other end of the third transmission line T3 is connected with one end of the fourth transmission line T4 as the inverting output terminal V of the injection-locked oscillator 4. out- ; the other end of the second transmission line T2 is connected to the other end of the fourth transmission line T4 as the power input terminal VDD of the injection locked oscillator 4;
所述功率合成单元3包括四根传输线,如图4所示；第一传输线T5的一端作为功率合成单元3的同相输入端Vin+；第一传输线T5的另一端与第二传输线T6的一端连接，作为功率合成单元3的同相输出端Vout+；第三传输线T7的一端作为功率合成单元3的反相输入端Vin-；第三传输线T7的另一端与第四传输线T8的一端连接，作为功率合成单元的反相输出端Vout-；第二传输线T6的另一端、第四传输线T8的另一端接地； The power combination unit 3 includes four transmission lines, as shown in Figure 4; one end of the first transmission line T5 is used as the non-inverting input terminal Vin+ of the power combination unit 3; the other end of the first transmission line T5 is connected to an end of the second transmission line T6, As the non-inverting output terminal Vout+ of the power combining unit 3; one end of the third transmission line T7 is used as the inverting input terminal Vin- of the power combining unit 3; the other end of the third transmission line T7 is connected to one end of the fourth transmission line T8 as a power combining unit The inverting output terminal Vout- of the second transmission line T6 and the other end of the fourth transmission line T8 are grounded;
在进行上述信号源的设计过程中，锁相环的输出频率范围由信号的输出频率范围决定；注入锁定振荡器的锁定频率范围应该与锁相环的输出频率范围匹配；为了实现稳定的注入锁定，注入锁定振荡器的锁定频率范围要大于锁相环的输出频率范围；同时，锁相环输出信号的幅度要满足注入锁定振荡器对输入信号幅度的要求；注入锁定振荡器的级数由信号源输出功率的要求、单个注入锁定振荡器的输出功率、信号的传输损耗、注入锁定振荡器对锁相环中压控振荡器的负载效应等共同决定；注入锁定振荡器的级数越多，输出信号的功率越大，但对锁相环中振荡器的负载效应越强，导致锁相环输出信号的频率和功率下降； In the design process of the above-mentioned signal source, the output frequency range of the phase-locked loop is determined by the output frequency range of the signal; the locking frequency range of the injection-locked oscillator should match the output frequency range of the phase-locked loop; in order to achieve stable injection-locked , the locking frequency range of the injection locked oscillator is greater than the output frequency range of the phase locked loop; at the same time, the amplitude of the output signal of the phase locked loop must meet the requirements of the input signal amplitude of the injection locked oscillator; the number of stages of the injection locked oscillator is determined by the signal The requirements of the source output power, the output power of a single injection-locked oscillator, the transmission loss of the signal, and the load effect of the injection-locked oscillator on the voltage-controlled oscillator in the phase-locked loop are jointly determined; the more stages of the injection-locked oscillator, The greater the power of the output signal, the stronger the load effect on the oscillator in the phase-locked loop, resulting in a decrease in the frequency and power of the phase-locked loop output signal;
根据注入锁定振荡器输出信号、输入信号的相位关系： According to the phase relationship between the output signal and the input signal of the injection locked oscillator:
其中，Q为注入锁定振荡器谐振回路的品质因数，Iosc为振荡器的震荡电流，Iinj为注入信号电流，ω0为注入锁定振荡器的自由震荡频率，ωinj为注入信号的频率。对多个相同的注入锁定振荡器来说，其自由震荡的频率相同，由谐振网络的电感电容值决定；相位不尽相同，由每个注入锁定振荡器自由震荡的初始相位决定；但在同一个注入信号的驱动下达到稳定的注入锁定时，根据上述公式其输出信号同相，实现注入锁定相位同步的功能。 Among them, Q is the quality factor of the resonant circuit of the ILO, I osc is the oscillating current of the oscillator, I inj is the injected signal current, ω 0 is the free oscillation frequency of the ILO, and ω inj is the frequency of the injected signal. For multiple identical injection-locked oscillators, the frequency of free oscillation is the same, which is determined by the inductance and capacitance of the resonant network; the phase is different, and is determined by the initial phase of free oscillation of each injection-locked oscillator; but in the same When stable injection locking is achieved under the drive of an injection signal, the output signals are in phase according to the above formula, realizing the function of phase synchronization of injection locking.
注入锁定震荡器中的传输线T1和T3的长度为注入信号波长的二分之一，传输线T2和T4的长度为注入信号波长的四分之一；功率合成单元中，传输线T5、T6、T7及T8的长度为输入信号波长的四分之一；结合图3和图4来分析，假设功率合成单元输出负载端的阻抗为无穷大，传输线T5、T6、T7及T8长度的选取使得功率合成单元输入端到地的阻抗为零，实现信号的有效输入；同时使传输线T6从输出端看进去的阻抗为无穷大，实现信号的有效输出；对注入锁定振荡器来说，传输线T2和T4长度的选取使得传输线T2从输出端看进去的阻抗为无穷大，而功率合成单元输入端到地的阻抗为零，实现信号的有效输出；同时，T2和T4长度的选取使得第五NMOS管MN5的漏端、第六NMOS管MN6的漏端到地的阻抗为零，实现信号的有效传输； The length of the transmission lines T1 and T3 in the injection locked oscillator is 1/2 of the wavelength of the injected signal, the length of the transmission lines T2 and T4 is 1/4 of the wavelength of the injected signal; in the power combining unit, the transmission lines T5, T6, T7 and The length of T8 is a quarter of the wavelength of the input signal; combined with Figure 3 and Figure 4 to analyze, assuming that the impedance of the output load end of the power combining unit is infinite, the selection of the length of the transmission lines T5, T6, T7 and T8 makes the input end of the power combining unit The impedance to the ground is zero to realize the effective input of the signal; at the same time, the impedance of the transmission line T6 seen from the output end is infinite to realize the effective output of the signal; for the injection-locked oscillator, the selection of the length of the transmission lines T2 and T4 makes the transmission line The impedance seen from the output end of T2 is infinite, while the impedance from the input end of the power combining unit to the ground is zero, so that the effective output of the signal is realized; at the same time, the selection of the length of T2 and T4 makes the drain end of the fifth NMOS transistor MN5, the sixth NMOS transistor MN5 The impedance from the drain end of the NMOS transistor MN6 to the ground is zero, which realizes the effective transmission of signals;
尽管本发明的内容已经通过上述优选实施例做了详细介绍，但应当认识到上述的描述不应该被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替换都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。 Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those skilled in the art after reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026921A (en) * | 2016-05-14 | 2016-10-12 | 复旦大学 | CMOS (Complementary Metal Oxide Semiconductor) integrated circuit terahertz source applied to terahertz skin imaging field |
| CN108429540A (en) * | 2018-02-11 | 2018-08-21 | 东南大学 | A Low Power and High Resolution Digital Phase Generator |
| CN108459305A (en) * | 2017-02-20 | 2018-08-28 | 北京雷测科技有限公司 | Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more |
| CN108459326A (en) * | 2017-02-20 | 2018-08-28 | 北京雷测科技有限公司 | Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more |
| CN110113004A (en) * | 2019-05-31 | 2019-08-09 | 华讯方舟科技有限公司 | Injection locking oscillating circuit and injection locked oscillator based on annular coupler |
| CN112557762A (en) * | 2019-09-25 | 2021-03-26 | 天津大学 | High-precision terahertz near field imaging array unit |
| WO2023060847A1 (en) * | 2021-10-14 | 2023-04-20 | 浙江大学 | Circuit and method for widening locking range of injection-locked oscillator |
| US11967966B2 (en) | 2021-10-14 | 2024-04-23 | Zhejiang University | Circuit and method for expanding lock range of injection-locked oscillators |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478319A (en) * | 2008-11-11 | 2009-07-08 | 电子科技大学 | High efficiency LINC transmitter |
| TW200935719A (en) * | 2008-02-05 | 2009-08-16 | Rafael Microelectronics Inc | Multi-band VCO |
| US20130195157A1 (en) * | 2012-01-31 | 2013-08-01 | Innophase Inc. | Transceiver Architecture and Methods for Demodulating and Transmitting Phase Shift Keying Signals |
| CN103475310A (en) * | 2013-09-21 | 2013-12-25 | 复旦大学 | Low power consumption injection locked frequency tripler |
| CN103975531A (en) * | 2011-11-30 | 2014-08-06 | 原子能和替代能源委员会 | Frequency synthesis device and method |
-
2014
- 2014-08-27 CN CN201410427434.XA patent/CN104202042A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200935719A (en) * | 2008-02-05 | 2009-08-16 | Rafael Microelectronics Inc | Multi-band VCO |
| CN101478319A (en) * | 2008-11-11 | 2009-07-08 | 电子科技大学 | High efficiency LINC transmitter |
| CN103975531A (en) * | 2011-11-30 | 2014-08-06 | 原子能和替代能源委员会 | Frequency synthesis device and method |
| US20130195157A1 (en) * | 2012-01-31 | 2013-08-01 | Innophase Inc. | Transceiver Architecture and Methods for Demodulating and Transmitting Phase Shift Keying Signals |
| CN103475310A (en) * | 2013-09-21 | 2013-12-25 | 复旦大学 | Low power consumption injection locked frequency tripler |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026921A (en) * | 2016-05-14 | 2016-10-12 | 复旦大学 | CMOS (Complementary Metal Oxide Semiconductor) integrated circuit terahertz source applied to terahertz skin imaging field |
| CN106026921B (en) * | 2016-05-14 | 2019-04-05 | 复旦大学 | A kind of CMOS integrated circuit THz source applied to Terahertz dermal imaging field |
| CN108459305A (en) * | 2017-02-20 | 2018-08-28 | 北京雷测科技有限公司 | Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more |
| CN108459326A (en) * | 2017-02-20 | 2018-08-28 | 北京雷测科技有限公司 | Terahertz radar transmit-receive system and single-shot receive Terahertz coherent radar more |
| CN108429540A (en) * | 2018-02-11 | 2018-08-21 | 东南大学 | A Low Power and High Resolution Digital Phase Generator |
| CN108429540B (en) * | 2018-02-11 | 2021-06-15 | 东南大学 | A Low Power High Resolution Digital Phase Generator |
| CN110113004A (en) * | 2019-05-31 | 2019-08-09 | 华讯方舟科技有限公司 | Injection locking oscillating circuit and injection locked oscillator based on annular coupler |
| CN112557762A (en) * | 2019-09-25 | 2021-03-26 | 天津大学 | High-precision terahertz near field imaging array unit |
| CN112557762B (en) * | 2019-09-25 | 2022-09-02 | 天津大学 | High-precision terahertz near field imaging array unit |
| WO2023060847A1 (en) * | 2021-10-14 | 2023-04-20 | 浙江大学 | Circuit and method for widening locking range of injection-locked oscillator |
| US11967966B2 (en) | 2021-10-14 | 2024-04-23 | Zhejiang University | Circuit and method for expanding lock range of injection-locked oscillators |
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