CN115483889A - Millimeter wave injection locking frequency doubler - Google Patents
Millimeter wave injection locking frequency doubler Download PDFInfo
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- CN115483889A CN115483889A CN202211221712.7A CN202211221712A CN115483889A CN 115483889 A CN115483889 A CN 115483889A CN 202211221712 A CN202211221712 A CN 202211221712A CN 115483889 A CN115483889 A CN 115483889A
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- 239000007924 injection Substances 0.000 title claims abstract description 92
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- 239000003990 capacitor Substances 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L2207/00—Indexing scheme relating to automatic control of frequency or phase and to synchronisation
- H03L2207/10—Indirect frequency synthesis using a frequency multiplier in the phase-locked loop or in the reference signal path
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention discloses a millimeter wave injection locking frequency doubler, which comprises a complementary push-push frequency doubler circuit and an injection locking oscillator. The complementary push-push frequency doubler circuit is used for generating harmonic signals with double frequency, the injection locking oscillator is used for locking the harmonic generated by the complementary push-push frequency doubler circuit, and the complementary push-push frequency doubler circuit is directly coupled and connected with the injection locking oscillator; the input fundamental wave signal generates harmonic component through a complementary push-push frequency doubler circuit, and then is directly coupled with an injection locking oscillator to realize frequency doubling. Compared with the traditional frequency multiplier structure, the invention has wider locking range when the input power is smaller, and has the advantages of low input sensitivity, low power consumption, high integration and the like.
Description
Technical Field
The invention relates to the technical field of radio frequency integration, in particular to a millimeter wave injection locking frequency doubler applied to a frequency synthesizer.
Background
Frequency multipliers play an extremely important role in Phase Locked Loops (PLLs) and are also key circuits in wireless communication systems. At present, most millimeter wave phase-locked loops adopt low-frequency phase-locked loops to cascade a frequency multiplier. Therefore, phase noise and power consumption of the local oscillator can be well compromised, and the injection traction phenomenon of the resonant cavity of the oscillator can be avoided by using the frequency multiplier. The locking range of the traditional frequency multiplier is narrow, generally about 8%, so that the application range of the traditional frequency multiplier is limited. The method for realizing the wide locking range mainly comprises the steps of reducing the Q value of the LC resonant cavity and increasing the injection efficiency of the second harmonic, but reducing the Q value of the LC resonant cavity can reduce the parallel resistance value of the resonant cavity, so that the size of a negative resistance tube needs to be increased, and the power consumption needs to be increased. And increasing the injection efficiency of the second harmonic requires the injection stage circuit to be optimized separately, so that the circuit structure becomes complicated. Therefore, expanding the frequency division range of the injection locked frequency doubler is one of the important conditions for designing a high-quality high-frequency doubler.
The documents "M.C.Chen and C.Y.Wu.design and analysis of CMOS subharmonic injection-locked frequency triplers. IEEE Transactions on Microwave Theory and Techniques [ J ],2008,56 (8): 1869-1878" use a MOS direct injection structure, which is directly injected into a resonant cavity by a MOS tube, and the drain of the MOS tube generates higher harmonic traction and locks the resonant cavity frequency. Although the structure of the direct injection method using the MOS transistor is simple, the method requires a large power consumption, and cannot optimize the injection transistor, so that the injection signal cannot be increased, and the locking range cannot be increased.
The document "H.Jia and L.Kuang." A W-Band Injection-Locked Frequency Based on Top-Injected Coupled Resonator [ J ]. In:2016IEEE Transactions on Microwave Theory and techniques.210-218 "implements a W-Band Injection-Locked Frequency multiplier In a manner Based on a Top-Injection Coupled Resonator. The second harmonic current is injected from the top, so that the problem of source level degradation is avoided, but the circuit design is complex and the requirement on the Q value is high, so that the power consumption of the circuit is increased to a certain extent, and the locking range of the circuit cannot be further increased.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides a millimeter wave injection locking frequency doubler with a wide range aiming at the problems in the prior art, so as to solve the problem that the injection locking frequency doubler structure in the prior art has a small locking range.
The technical scheme is as follows: in order to achieve the above object, the present invention provides a wide-range millimeter wave injection-locked frequency doubler, which comprises a complementary push-push frequency doubler generating circuit and an injection-locked oscillator, wherein the complementary push-push frequency doubler generating circuit is directly coupled to the injection-locked oscillator; the injection fundamental wave signal is injected through a complementary push-push double frequency generating circuit and the positive input end and the negative input end of the injection locking oscillator, the injection fundamental wave signal generates harmonic components through the complementary push-push double frequency generating circuit and then is directly coupled to the injection locking oscillator, and the injection locking oscillator locks the harmonic signals generated by the complementary push-push double frequency generating circuit to generate a frequency doubling output signal.
The complementary push-push double frequency generation circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube and a sixth MOS tube; the grid electrodes of the first MOS tube and the second MOS tube are connected with the negative electrode input end, and the grid electrodes of the third MOS tube and the fourth MOS tube are connected with the positive electrode input end; the drains of the first MOS tube and the fourth MOS tube are connected with one end of a first inductor, and the drains of the second MOS tube and the third MOS tube are connected with the other end of the first inductor; the source electrodes of the first MOS tube and the fourth MOS tube are connected with the grid electrode of the sixth MOS tube, and the source electrodes of the second MOS tube and the third MOS tube are connected with the grid electrode of the fifth MOS tube.
The complementary push-push double frequency generation circuit has a completely symmetrical sampling structure, so that the signal voltage swing of the source and the drain of the first MOS tube are approximately equal.
The injection locking oscillator is composed of a first inductor, a first adjustable capacitor, a second adjustable capacitor, a tuning voltage, a seventh MOS tube and an eighth MOS tube; the drain electrode of the seventh MOS tube and the drain electrode of the eighth MOS tube are respectively connected with the first adjustable capacitor and the second adjustable capacitor; the grid electrode of the eighth MOS tube is connected with the drain electrode of the seventh MOS tube, and the grid electrode of the seventh MOS tube is connected with the drain electrode of the eighth MOS tube; and the source electrodes of the seventh MOS tube and the eighth MOS tube are connected with the ground, wherein the seventh MOS tube and the eighth MOS tube are used for negative resistance compensation.
When the injection locking oscillator is locked and the phase of the injection locking oscillator at the frequency point is not zero, a complementary push-push double frequency generating circuit of an external circuit must provide enough phase to compensate the phase difference between the total current flowing into the injection locking oscillator and the free current of the injection locking oscillator, so that locking occurs; the phase difference between the total current flowing into the injection locked oscillator and the free current flowing into the injection locked oscillator is related to the phase of the injection locked oscillator impedance, so adjusting the injection locked oscillator so that the injection locked oscillator impedance is sufficiently flat can widen the locking range of the injection locked doubler.
The total current flowing into the injection locked oscillator can be regarded as the sum of the free oscillation current of the injection locked oscillator and the injection current vector, and the angle between the vector total current and the free current of the injection locked oscillator is the phase of the input impedance of the injection locked oscillator; under the injection signal of fixed power, the current generated by the complementary push-push frequency doubling circuit is a fixed value, and the maximum angle of the total current synthesized by the free current of the injection locking oscillator and the current generated by the complementary push-push frequency doubling circuit determines the locking range; increasing the external injection signal power of the injection locked oscillator can widen the operating bandwidth of the injection locked oscillator and increase the injection signal power by direct coupling.
The output signal frequency is 2 times of the frequency of the injection fundamental wave signal.
Has the beneficial effects that: compared with the prior art, the millimeter wave injection locking frequency doubler with the wide range has the beneficial effects that:
1. the problem that the locking range of a traditional injection locking frequency multiplier is narrow when the input power is small is solved, and the millimeter wave injection locking frequency multiplier with low input sensitivity is provided, so that the frequency multiplier still has a wide locking range when the input power is small;
2. the invention provides extra phase compensation by using the MOS tube, under the given frequency offset, the injection locking frequency doubler can work at a place far away from a locking edge, and the power of an injection signal is increased in a direct coupling mode, so that the locking range is expanded, and the locking of an ultra-wide range can be realized.
Drawings
FIG. 1 is a schematic diagram of a basic injection locking circuit;
FIG. 2 is a current vector composite of an LC resonator;
FIG. 3 is a schematic diagram of a complementary push-push frequency doubling circuit of the present invention;
fig. 4 is a millimeter wave injection locked frequency multiplier with a wide locking range of the present invention.
The figure shows that: the circuit comprises a first inductor L1, a first MOS (metal oxide semiconductor) transistor M1, a second MOS transistor M2 and a first adjustable capacitor C1; a second inductor L2, a second inductor L3, a second adjustable capacitor C2, a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6, a seventh MOS transistor M7, an eighth MOS transistor M8, a first resistor R1, a second resistor R2, a third capacitor C3, a fourth capacitor C4, and an anode input terminal f in+ Negative input terminal f in- Positive output terminal f out+ Negative electrode output terminal f out- The supply voltage VDD.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to the following detailed description and accompanying drawings.
As shown in fig. 1, the basic injection locking circuit schematic diagram includes: l is a radical of an alcohol 1 、C 1 Representing the inductance and capacitance of the resonator, R P Is L 1 Parasitic resistance of (2), current source I inj Representing a signal injected into the cavity from the outside (double frequency signal), I osc Representing free resonant current, I T Is shown as I inj And I osc Vector superposition of (c), ω inj The frequency of the signal externally injected into the cavity.
As shown in fig. 2, the current vector composite diagram of the LC resonant cavity has a circuit structure including: signal I injected into the cavity externally inj Free resonant current I osc ，I T For the vector superposition of the two currents mentioned above,
as a vector I T And vector I osc Angle of between, theta being the vector I inj And vector I osc The angle therebetween. Under the injection signal of fixed power, | | I inj I is a fixed number, I osc And I inj Synthetic of T Determines the locking range. Thus, increasing the injection signal power can widen the injection locked doubler operating bandwidth. The lock range expression is as follows:
wherein ω is 0 To inject the free running frequency of the locked oscillator, Q is the Q of its corresponding LRC network, where Q may reflect the phase frequency characteristics.
As shown in fig. 3 and 4, the circuit structure of the millimeter wave injection locking frequency doubler with wide locking range of the present invention includes: a complementary push-push double frequency generation circuit 1, an injection locked oscillator 2 and an output buffer stage 3.
The complementary push-push double frequency generation circuit 1 is directly coupled with the injection locking oscillator 2; the injected fundamental wave signal passes through the complementary push-push double frequency generation circuit 1 and the positive input terminal f of the injection locked oscillator 2 in+ And a negative input terminal f in- And injecting, namely generating harmonic components by the injected fundamental wave signal through a complementary push-push double frequency generation circuit 1, then directly coupling the harmonic components to an injection locking oscillator 2, and locking the harmonic signals generated by the complementary push-push double frequency generation circuit 1 by the injection locking oscillator 2 to generate a frequency multiplication output signal. The complementary push-push frequency doubling circuit 1 is used for generating frequency doubling harmonic signals, and the injection locking oscillator is used for locking the harmonic signals generated by the harmonic generator. The injected complementary push-push frequency doubling circuit 1 generates harmonic components which are then frequency doubled by direct coupling to an injection locked oscillator 2. The complementary push-push double frequency generation circuit 1 comprises a first MOS tube M1, a second MOS tube M2, a third MOS tube M3 and a fourth MOS tube M4, wherein the grid electrode of the first MOS tube M1 and the grid electrode of the third MOS tube M3 are connected with a negative electrode input end f in- The grid electrode of the second MOS tube M2 and the grid electrode of the fourth MOS tube M4 are connected with the positive electrode input end f in+ . The first MOS transistor M1 and the fourth MOS transistor MAnd the drain electrode of the OS tube M4 outputs the second harmonic component of the preset frequency.
The injection locked oscillator 2 includes a first coupling inductor L1, a first capacitor C1, a second capacitor C2, a seventh MOS transistor M7, and an eighth MOS transistor M8. The seventh MOS transistor M7 and the eighth MOS transistor M8 have negative resistance compensation function. When the cavity is locked and the phase of the frequency point cavity is not zero, the external circuit (i.e., the complementary push-push double frequency generating circuit) must provide enough phase to compensate the phase difference between the total current flowing into the cavity and the free cavity current, so that locking occurs. According to vector analysis, the phase difference between the total current flowing into the resonant cavity and the free resonant cavity current is easily known to be related to the phase of the resonant cavity impedance, so that the resonant cavity impedance is adjusted to be flat enough to widen the locking range of the injection locking frequency doubler.
The total current flowing into the resonant cavity can be regarded as the sum of the free oscillation current of the oscillator and the injection current vector, and the angle between the vector total current and the free resonant cavity current is the phase of the input impedance of the LC resonant cavity. Under the injection signal of fixed power, the current generated by the complementary push-push frequency doubling circuit is a fixed value, and the maximum angle of the total current synthesized by the free resonant cavity current and the current generated by the complementary push-push frequency doubling circuit determines the locking range. Therefore, increasing the injected signal power can broaden the injection locked doubler operating bandwidth. The design is therefore also based on the idea of increasing the injected signal power by means of direct coupling.
The complementary push-push double frequency generation circuit 1 of the present embodiment includes: the MOS transistor comprises a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3 and a fourth MOS transistor M4. The harmonic generation circuit generates second harmonic signals on the drains of the first MOS tube M1 and the fourth MOS tube M4 by utilizing the nonlinearity of the first MOS tube M1 and the fourth MOS tube M4 of the input fundamental frequency signal, and the drain current I of the first MOS tube M1 is subjected to the blocking action of the capacitor d (t) can be expressed in the following form
Wherein，ω INJ For the frequency of the injected signal, k n ＝μ n C ox w n /l n And k p ＝μ p C ox w p /l p ，C OX Is the gate capacitance per unit area, w n /l n And w p /l p Width-to-length ratio of channels corresponding to NMOS and PMOS transistors, respectively n And mu p The mobility of the electrons and holes, respectively, and a the amplitude of the differential input signal.
As noted above, while the present invention has been shown and described with reference to certain preferred embodiments, it is not to be construed as limited thereto. Various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. A millimeter wave injection locking frequency doubler is characterized by comprising a complementary push-push frequency doubler generating circuit (1) and an injection locking oscillator (2), wherein the complementary push-push frequency doubler generating circuit (1) is directly coupled with the injection locking oscillator (2); the injected fundamental wave signal passes through the complementary push-push double frequency generation circuit (1) and the positive input end (f) of the injection locked oscillator (2) in+ ) And a negative input terminal (f) in- ) And injecting, wherein the injected fundamental wave signal generates a harmonic component through the complementary push-push double-frequency generation circuit (1) and then is directly coupled to the injection locking oscillator (2), and the injection locking oscillator (2) locks the harmonic signal generated by the complementary push-push double-frequency generation circuit (1) to generate a frequency multiplication output signal.
2. The millimeter wave injection locking frequency doubler according to claim 1, wherein the complementary push-push frequency doubler generating circuit (1) comprises a first MOS transistor (M1), a second MOS transistor (M2), a third MOS transistor (M3), a fourth MOS transistor (M4), a fifth MOS transistor (M5) and a sixth MOS transistor (M6); the grids of the first MOS transistor (M1) and the second MOS transistor (M2) are connected with the negative input end (f) in- ) The grids of the third MOS transistor (M3) and the fourth MOS transistor (M4) are connected with the positive input end (f) in+ ) (ii) a The drain electrodes of the first MOS transistor (M1) and the fourth MOS transistor (M4) are connected with a first electrodeOne end of the inductor (L1), drain electrodes of the second MOS tube (M2) and the third MOS tube (M3) are connected with the other end of the first inductor (L1); the source electrodes of the first MOS transistor (M1) and the fourth MOS transistor (M4) are connected with the grid electrode of the sixth MOS transistor (M6), and the source electrodes of the second MOS transistor (M2) and the third MOS transistor (M3) are connected with the grid electrode of the fifth MOS transistor (M5).
3. The millimeter wave injection-locked frequency doubler according to claim 2, wherein the complementary push-push frequency doubler generating circuit (1) has a completely symmetrical structure, so that the signal voltage swings of the source and drain of the first MOS transistor (M1) are substantially equal.
4. The millimeter wave injection-locked frequency doubler according to claim 1, wherein the injection-locked oscillator (2) is composed of a first inductor (L1), a first adjustable capacitor (C1), a second adjustable capacitor (C2), and a tuning voltage (V |) tune ) The seventh MOS tube (M7) and the eighth MOS tube (M8); the drain electrode of the seventh MOS tube (M7) and the drain electrode of the eighth MOS tube (M8) are respectively connected with the first adjustable capacitor (C1) and the second adjustable capacitor (C2); the grid electrode of the eighth MOS tube (M8) is connected with the drain electrode of the seventh MOS tube (M7), and the grid electrode of the seventh MOS tube (M7) is connected with the drain electrode of the eighth MOS tube (M8); the source electrodes of the seventh MOS tube (M7) and the eighth MOS tube (M8) are both connected with the Ground (GND), wherein the seventh MOS tube (M7) and the eighth MOS tube (M8) are used for negative resistance compensation.
5. The millimeter wave injection-locked frequency doubler according to claim 4, wherein the injection-locked oscillator (2) is configured such that when the injection-locked oscillator is locked and the phase of the injection-locked oscillator at the frequency point is not zero, the complementary push-push frequency doubler generating circuit (1) of the external circuit must provide sufficient phase to compensate for the phase difference between the total current flowing into the injection-locked oscillator and the free current of the injection-locked oscillator, so that locking occurs; the phase difference between the total current flowing into the injection locked oscillator and the free current of the injection locked oscillator is related to the phase of the injection locked oscillator impedance, so adjusting the injection locked oscillator so that the injection locked oscillator impedance is flat enough can widen the locking range of the injection locked doubler.
6. The millimeter wave injection-locked frequency doubler according to claim 5, wherein the total current flowing into the injection-locked oscillator (2) is regarded as a sum of a free oscillation current of the injection-locked oscillator and an injection current vector, and an angle between the vector total current and the free current of the injection-locked oscillator is a phase of an input impedance of the injection-locked oscillator; under the injection signal of fixed power, the current generated by the complementary push-push frequency doubling circuit is a fixed value, and the maximum angle of the total current synthesized by the free current of the injection locking oscillator and the current generated by the complementary push-push frequency doubling circuit determines the locking range; the working bandwidth of the injection locking oscillator can be widened by increasing the external injection signal power of the injection locking oscillator, and the injection signal power is increased by a direct coupling mode.
7. The millimeter wave injection-locked frequency doubler according to claim 2, wherein the output signal frequency is 2 times the frequency of the injected fundamental signal.
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| CN202211221712.7A CN115483889A (en) | 2022-10-08 | 2022-10-08 | Millimeter wave injection locking frequency doubler |
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