CN104182736B - Fingerprint Identification sensor encapsulating structure and method for packing - Google Patents
Fingerprint Identification sensor encapsulating structure and method for packing Download PDFInfo
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- CN104182736B CN104182736B CN201410424132.7A CN201410424132A CN104182736B CN 104182736 B CN104182736 B CN 104182736B CN 201410424132 A CN201410424132 A CN 201410424132A CN 104182736 B CN104182736 B CN 104182736B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The embodiment of the present invention provides a kind of fingerprint Identification sensor encapsulating structure and method for packing, and the encapsulating structure includes：Fingerprint Identification sensor that is square setting on silicon and being electrically connected with the silicon wafer；The color film layer set above the fingerprint Identification sensor；The hard mask layer set in the top of the color film layer；The substrate set below the silicon wafer；Wherein, at least one layer high dielectric grain of doping in the hard mask layer and the color film layer.The encapsulating structure that the present embodiment is provided, can improve the recognition accuracy of fingerprint Identification sensor.
Description
Technical field
The present embodiments relate to bio-identification module packaging technology, more particularly to a kind of fingerprint Identification sensor encapsulation knot
Structure and method for packing.
Background technology
With the development of science and technology, electronics detection technology is employed more and more.Realized currently with electronics detection technology
Fingerprint recognition (finger printing) technology, be most ripe and cheap biometrics identification technology at present, it can
To be applied in the fields such as notebook computer, mobile phone, automobile, bank.
In the prior art, the fingerprint Identification sensor realized using biometrics identification technology, mainly passes through complementary gold
Belong to oxide semiconductor (Complementary Metal Oxide Semiconductor, abbreviation CMOS) technique formation matrix
The capacitance type fingerprint identification sensor of formula.
However, because fingerprint Identification sensor is placed in electric capacity sense by existing capacitance type fingerprint identification sensor encapsulating structure
Survey under unconspicuous control button or display element so that capacitance type fingerprint identification sensor capacitance sensing DeGrain, lead
Cause the recognition accuracy of condenser type fingerprint Identification sensor not high.
The content of the invention
The embodiment of the present invention provides a kind of fingerprint Identification sensor encapsulating structure and method for packing, to improve fingerprint recognition biography
The recognition accuracy of sensor.
In a first aspect, the embodiment of the present invention provides a kind of fingerprint Identification sensor encapsulating structure, including：
Fingerprint Identification sensor that is square setting on silicon and being electrically connected with the silicon wafer；
The color film layer set above the fingerprint Identification sensor；
The hard mask layer set in the top of the color film layer；
The substrate set below the silicon wafer；
Wherein, at least one layer high dielectric grain of doping in the hard mask layer and the color film layer.
Second aspect, the embodiment of the present invention provides a kind of fingerprint Identification sensor method for packing, including：
Fingerprint Identification sensor is set in the top of silicon wafer, the fingerprint Identification sensor is electrically connected with the silicon wafer
Connect；
In the top of the fingerprint Identification sensor, color film layer is set；
At least one layer is set in hard mask layer, the hard mask layer and the color film layer above the color film layer
Adulterate high dielectric grain；
The silicon wafer is arranged on substrate.
Fingerprint Identification sensor encapsulating structure and method for packing that the present embodiment is provided, the encapsulating structure include：In silicon wafer
Fingerprint Identification sensor that is being set above piece and being electrically connected with the silicon wafer；The color set above fingerprint Identification sensor
Film layer；The hard mask layer set in the top of color film layer；The substrate set below silicon wafer, wherein, in hard mask layer or
In color film layer, at least one layer doped with high dielectric grain, so as to not only cause fingerprint Identification sensor to the sensing of electric capacity
It is more obvious, the recognition accuracy of fingerprint Identification sensor can be improved, can also increase the identification of fingerprint Identification sensor away from
From.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the diagrammatic cross-section one of fingerprint Identification sensor encapsulating structure of the present invention；
Fig. 2 is fingerprint recognition schematic diagram of a scenario of the present invention；
Fig. 3 is fingerprint recognition principle schematic of the present invention；
Fig. 4 is the diagrammatic cross-section two of fingerprint Identification sensor encapsulating structure of the present invention；
Fig. 5 is the diagrammatic cross-section three of fingerprint Identification sensor encapsulating structure of the present invention；
Fig. 6 is the diagrammatic cross-section four of fingerprint Identification sensor encapsulating structure of the present invention；
Fig. 7 is the diagrammatic cross-section five of fingerprint Identification sensor encapsulating structure of the present invention；
Fig. 8 is the schematic flow sheet of fingerprint Identification sensor method for packing embodiment one of the present invention；
Fig. 9 is the diagrammatic cross-section seven of fingerprint Identification sensor encapsulating structure of the present invention；
Figure 10 is the diagrammatic cross-section eight of fingerprint Identification sensor encapsulating structure of the present invention；
Figure 11 is the diagrammatic cross-section nine of fingerprint Identification sensor encapsulating structure of the present invention；
Figure 12 is the schematic flow sheet of fingerprint Identification sensor method for packing embodiment one of the present invention.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Fig. 1 is the diagrammatic cross-section one of fingerprint Identification sensor encapsulating structure of the present invention.The fingerprint that the present embodiment is provided is known
Individual sensor is specifically as follows capacitance type fingerprint identification sensor, can be with the electronic device, and the electronic equipment can be intelligence
Energy phone, touch pad, mobile computing device, electrical equipment, the panel of vehicle or fuselage etc..As shown in figure 1, the finger that the present embodiment is provided
Line identification sensor encapsulating structure includes：
Fingerprint Identification sensor 103 that is being set in the top of silicon wafer 102 and being electrically connected with the silicon wafer 102；
The color film layer 104 set in the top of fingerprint Identification sensor 103；
The hard mask layer 105 set in the top of the color film layer 104；
The substrate 101 set below the silicon wafer 102.
In the present embodiment, silicon wafer 102 and fingerprint Identification sensor 103 are independently arranged, silicon wafer 102 and fingerprint recognition
Sensor 103 is connected by way of electrical connection.By being independently arranged for silicon wafer 102 and fingerprint Identification sensor 103, to silicon
The requirement of chip 102 is relatively low so that the cost of fingerprint Identification sensor encapsulating structure is relatively low.
The color film layer 104 set on fingerprint Identification sensor 103, not only with color effects, can also make fingerprint
The element of identification sensor will not be visible to user immediately.
The hard mask layer 105 set in color film layer 104, the flatness of hard mask layer 105 is less than 10 μm.Hard mask layer
105 mainly for the protection of fingerprint Identification sensor and silicon wafer, prevents user in pressing many times or improper by pressure pair
The damage of fingerprint Identification sensor and silicon wafer.It will be understood by those skilled in the art that the fingerprint recognition that the present embodiment is provided is passed
Sensor encapsulating structure can also be used cooperatively with control button, and control button can be placed on hard mask layer 105, now, firmly
The top of mask layer 105 has concave shape, in this way, when user's finger is directed into concave shape, user's finger can be by very
Position well, to carry out fingerprint recognition.
Further, in the present embodiment is provided hard mask layer or color film layer, at least one layer doped with high dielectric
Grain.The high dielectric grain of the doping can improve the capacitive sensing of fingerprint Identification sensor.In the present embodiment, high dielectric
The size of grain is more than or equal to 0.05 micron (μm) and less than or equal to 5 μm.High dielectric grain can be titanate particle or niobium
Hydrochlorate particle.For metatitanic acid salt particle, it is specifically as follows：Barium titanate (BaTiO3), calcium titanate (CaTiO3), strontium titanates
(SrCaTiO3) etc..
For niobic acid salt particle, it is specifically as follows：Barium sodium niobate (BNN) (Ba2NaNb5O15), strontium potassium niobate (KSr2Nb5O15), niobium
Sour potassium tantalum (KTaNbO3) etc..
In the present embodiment, can also be burnt cadmium niobate (Cd in addition to metatitanic acid salt particle or niobic acid salt particle2Nb2O7)
Particle, tungstic acid (WO3).For specific high dielectric grain, here is omitted for the present embodiment, as long as Jie at 1 GHz
Electric constant is more than 10.
Dielectric constant after the color film layer solidification of the high dielectric grain of doping finally given at 1 GHz can reach 4 with
On.
Dielectric constant after the hard mask layer solidification of the high dielectric grain of doping finally given at 1 GHz can reach 4 with
On.
Below with a specific embodiment, with reference to Fig. 2 and Fig. 3 to capacitive character of the fingerprint Identification sensor to user fingerprints
The principle of sensing is specifically described.The fingerprint Identification sensor of the present embodiment can draw formula (sweep or swipe) to wipe,
Can be push type (touch or area), the present embodiment is not specially limited.
Fig. 2 is fingerprint recognition schematic diagram of a scenario of the present invention.As shown in Fig. 2 the finger of people includes line peak and line paddy, work as finger
When being pressed along the hard mask layer above the fingerprint Identification sensor, capacitor type connection mould is presented in fingerprint Identification sensor
Formula, when people is placed on finger above fingerprint Identification sensor, finger serves as another electrode of fingerprint Identification sensor.By
It is deep mixed in there is line peak and line paddy on finger, cause each electric capacity electricity for the capacitor array that fingerprint Identification sensor includes
Pressure is different.The line peak of the fingerprint of user's finger 1 is 11, and when pressing hard mask layer, fingerprint Identification sensor senses and is in phase line
Peak 11a.
Fig. 3 is fingerprint recognition principle schematic of the present invention.Capacitance type fingerprint identification sensor includes multiple capacitive sensings
Device unit.As shown in figure 3, figure 3 illustrates 3 capacitive sensor units 20, capacitive sensor unit 20 includes ginseng
Examine electric capacity 325, and sensing electrode 31 and 32.Please continue to refer to Fig. 2, the line peak of the fingerprint of user's finger 1 is 11, when pressing is covered firmly
During film layer, the electric capacity between sensing electrode 31 on line peak 11 and fingerprint recognition sensing is 324, and line paddy 12 senses with fingerprint recognition
The electric capacity between sensing electrode 31 on device is 324 '.From the figure 3, it may be seen that line peak and line paddy and the sensing on fingerprint Identification sensor
The distance between electrode 31 difference, so that the capacitance produced is different, is integrated with logic circuit, the logic circuit root on silicon wafer
According to capacitance, fingerprint image is generated by corresponding algorithm, and then realize fingerprint recognition.
It will be understood by those skilled in the art that above-described embodiment only schematically illustrates one kind recognizes fingerprint by electric capacity
Method, during implementing, the method that fingerprint is recognized by electric capacity is also a variety of, but principle is roughly the same, is
The electric capacity produced using " line peak " and " line paddy " correspondence included on fingerprint is different, to different capacitances by handling, then
Generate fingerprint image.The method for recognizing fingerprint by electric capacity for others, here is omitted for the present embodiment.
It will be understood by those skilled in the art that electric capacity C=ε S/d (ε is the dielectric constant of finger and induced electricity contrasted between solid dielectric,
S is polar plate area, and d is the distance between finger and induction electrode).In the present embodiment, Jie between the finger and induction electrode of people
Matter includes two kinds, and one kind is air, a kind of color film layer and hard mask layer to be set above fingerprint Identification sensor, due to this
In hard mask layer or color film layer in embodiment, at least one layer doped with high dielectric grain, then hard mask layer or color film
The dielectric constant increase of layer, so as to increase between finger and induction electrode the electric capacity of (324 ' and 324 corresponding capacitor), from
And make it that fingerprint Identification sensor is more obvious to the sensing of electric capacity, the identification that can improve capacitance type fingerprint identification sensor is accurate
True rate, further, in the case where electric capacity is constant, if dielectric constant increase, will increase apart from d, i.e., the present embodiment is also
The identification distance of fingerprint Identification sensor can be increased.
It will be understood by those skilled in the art that Fig. 2 and Fig. 3 basically illustrate the push type of finger stationary contact hard mask layer
Fingerprint recognition principle.For wiping the formula of drawing, when carrying out fingerprint recognition, user can slide finger above hard mask layer
Dynamic, when finger is slipped on hard mask layer, fingerprint Identification sensor can gather several fingerprint images, and by detecting finger
Initial position, the speed slided of finger and direction reconstruct whole fingerprint image, ultimately form the fingerprint image of whole finger.
When fingerprint Identification sensor gathers each width fingerprint image, its acquisition mode is similar with Fig. 3 embodiments.Therefore the present embodiment
The recognition accuracy of scratching formula fingerprint Identification sensor can be increased.
The fingerprint Identification sensor encapsulating structure that the present embodiment is provided, including：On silicon side set and with the silicon
The fingerprint Identification sensor of chip electrical connection；The color film layer set above fingerprint Identification sensor；In the upper of color film layer
The hard mask layer that side is set；The substrate set below silicon wafer, wherein, in hard mask layer or color film layer, at least one
Layer is doped with high dielectric grain, so as to not only make it that fingerprint Identification sensor is more obvious to the sensing of electric capacity, can improve and refer to
The recognition accuracy of line identification sensor, can also increase the identification distance of fingerprint Identification sensor.
Alternatively, when fingerprint Identification sensor apart from finger it is distant when, fingerprint Identification sensor perceives fingerprint
Ability is weaker, in order to ensure fingerprint Identification sensor in fingerprint Identification sensor encapsulating structure can with effectively perceive to fingerprint,
The present embodiment is controlled to the thickness of hard mask layer and the thickness of color film layer, in the present embodiment the thickness of hard mask layer and
The thickness sum of color film layer is less than or equal to 100 μm.
During implementing, following possible implementation can be divided into, a kind of possible implementation is：Cover firmly
The thickness of film layer is more than or equal to 10 μm and is less than or equal between 50 μm that hard mask layer and the thickness sum of color film layer are small
In 100 μm.
Alternatively possible implementation, the thickness of color film layer is more than or equal to 5 μm and less than or equal to 50 μm, covers firmly
The thickness sum of film layer and color film layer is less than 100 μm.
Another possible implementation, the thickness of hard mask layer is more than or equal to 10 μm and less than or equal to 50 μm, face
The thickness of color film layer is more than or equal to 5 μm and less than or equal to 50 μm.
Further, in order that fingerprint Identification sensor encapsulating structure can be applied in a variety of occasions, the two can be made
Thickness it is thin as far as possible, to reduce thickness of the fingerprint Identification sensor in vertical direction.Now, the thickness and face of hard mask layer
The thickness sum of color film layer is less than or equal to 50 μm.
During implementing, following possible implementation can be divided into, a kind of possible implementation is：Cover firmly
The thickness of film layer is more than or equal to 10 μm and less than or equal to 30 μm, and hard mask layer and the thickness sum of color film layer are less than 50 μ
m。
Alternatively possible implementation, the thickness of color film layer is more than or equal to 10 μm and less than or equal to 30 μm, firmly
Mask layer and the thickness sum of color film layer are less than 30 μm.
Another possible implementation, the thickness of hard mask layer is more than or equal to 10 μm and less than or equal to 30 μm, face
The thickness of color film layer is more than or equal to 10 μm and less than or equal to 30 μm.
Specific embodiment is used below, and the preparing raw material and preparation method to hard mask layer and color film layer are carried out in detail
Describe in detail bright.
Color film layer
If 1) adulterate high dielectric grain in color film layer, color film layer passes through thermosetting chemical industry by weight by following component
Skill is made：
High dielectric grain：5~30 parts, color material：30-80 parts, macromolecule resin：20-50 parts, solvent：0.1-10 parts,
Dispersant：0.1-5 parts, component sum described above is 100 parts；
Wherein, the macromolecule resin includes at least one of following：
Phenolic resin, epoxy resin, makrolon, acrylic resin, epoxy resin, polyurethane resin or organic siliconresin
Deng.In the present embodiment, the hardness to macromolecule resin does not have particular/special requirement, every to carry out brushing the high score with heat cure
Subtree fat, all may be used in the present embodiment.
Solvent is made up of at least one of following：Solvent is ethanol, n-butanol, isobutanol, ethylene glycol-ether, acetic acid
Butyl ester, cyclohexanone, glycidol ether, tetrahydrofuran, methyl ethyl ketone, cyclohexanone, propane diols, N,N-dimethylformamide, second
Glycol ether acetic acid esters, ethyl acetate etc.；The present embodiment only lists partial solvent, every to dissolve the molten of macromolecule resin
Agent, in the protection domain of the embodiment of the present invention.
The dispersant is made up of at least one of following：It is polyethylene glycol, polyvinylpyrrolidone, polyacrylic acid, poly-
Vinyl alcohol etc.；The present embodiment only lists part dispersant, every to disperse the scattered of high dielectric grain in above-mentioned solvent
Agent, in the protection domain of the embodiment of the present invention.
Color material can be nanometer or micron-sized particle, such as titanium dioxide, carbon black or have with coloured
Machine liquid.
During implementing, macromolecule resin and high dielectric grain and color material are dissolved in solvent, and
Add dispersant in solvent, the effect of dispersant is primarily to may be uniformly dispersed in high dielectric grain and color material molten
Have in the solvent of macromolecule resin.
, can be by the solvent brush after high dielectric grain and color material are dispersed in the solvent dissolved with macromolecule resin
Be coated on fingerprint Identification sensor, then carry out heat cure, wherein, heat curing temperature be 100 DEG C -180 DEG C, hardening time with
Solidification temperature is relevant, and hardening time is 10min-90min, after heat cure, and solid content is 50%-90%, the contraction before and after solidification
Than the thickness of color film layer that less than 5%, is obtained after solidification between 10 μm to 30 μm.
If 2) adulterate high dielectric grain in color film layer, color film layer passes through UV-curing by weight by following component
Chemical industry skill is made：
Adulterate high dielectric grain：5~30 parts, color material：30-80 parts, organic monomer：20-50 parts, diluent：0.1-
10 parts, light trigger：0.1-5 parts, stabilizer：0.1-5 parts, component sum described above is 100 parts；
Wherein, the organic monomer includes at least one of following (methyl) acrylate monomer：
(methyl) hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, (methyl) acrylic acid
Isobornyl thiocyanoacetate, (methyl) acrylic acid tetrahydrofuran ester, ethyoxyl (methyl) acrylate, (methyl) dodecyl acrylate, (first
Base) ten ester of acrylic acid, (methyl) tridecyl acrylate
Color material can be nanometer or micron-sized particle, such as titanium dioxide, carbon black or have with coloured
Machine liquid.
Diluent is made up of at least one of following：Tripropylene glycol diacrylate, trimethylolpropane tris acrylic acid
Ester, ethoxylated trimethylolpropane triacrylate, the acrylate of dipentaerythrite six, 1,6-HD methoxyl group list third
On the one hand olefin(e) acid ester, ethoxylation neopentyl glycol methoxyl group mono acrylic ester etc., the diluent in the present embodiment play diluting effect,
The solution of color film layer is set to be partial to brushing；On the other hand crosslinked action is played again.The present embodiment only lists portion of diluent, other
Here is omitted for diluent the present embodiment.
Light trigger is made up of at least one of following：Aromatic diazo salt, aromatic sulfonium salts, aromatic iodonium salt or two cyclopentadienyls
Molysite, polyvinyl cinnamate, poly- Chinese cassia tree fork malonic acid glycol ester polyester etc.；The effect of light trigger is in colloid absorbing
After ultraviolet luminous energy, free radical or ion are produced through decomposing, and then triggers organic monomer polymerization crosslinking into network structure.The present embodiment
Part light trigger is only listed, here is omitted for other light trigger the present embodiment.
Stabilizer is made up of at least one of following：Hydroquinones, p methoxy phenol, 1,4-benzoquinone, 2,6 12 tertiary fourths
Base cresols, phenothiazine, anthraquinone etc..Further polymerization occurs for polymerizate when stabilizer is for reducing storage, and raising is deposited
Store up stability.
During implementing, the solvent after can this be diluted is brushed on fingerprint Identification sensor, is then carried out
Ultraviolet light solidifies, and ultraviolet wavelength is less than 400nm, and hardening time is 10s~60s, and after ultraviolet light solidification, solid content is 50%-
90%, the shrinkage ratio before and after solidification is less than 2%, and the thickness of the color film layer obtained after solidification is between 10 μm to 30 μm.
Hard mask layer
When adulterated in hard mask layer high dielectric grain when, the hard mask layer in the present embodiment can pass through heat cure or ultraviolet
Ultraviolet curing process is realized, is illustrated separately below.
If 1) adulterate high dielectric grain in hard mask layer, hard mask layer passes through thermosetting chemical industry by weight by following component
Skill is made：
High dielectric grain：10~60 parts, macromolecule resin：50-80 parts, solvent：0.1-10 parts, dispersant：0.1-5 parts,
Component sum described above is 100 parts.
Wherein, the macromolecule resin is comprising at least one of following：
Phenolic resin, epoxy resin, makrolon, acrylic resin or polyurethane resin.
The above-mentioned resin listed, is respectively provided with higher hardness and mechanical strength, it is ensured that the hardness of hard mask layer.Ability
Field technique personnel, which are appreciated that above are only, schematically lists the possible implementation of macromolecule resin, is implementing
During, every macromolecule resin with high rigidity may apply in the present embodiment.
Solvent is made up of at least one of following：Ethanol, n-butanol, isobutanol, ethylene glycol-ether, butyl acetate, ring
Hexanone, glycidol ether, tetrahydrofuran, methyl ethyl ketone, cyclohexanone, propane diols, N,N-dimethylformamide, ethylene glycol ethyl ether
Acetic acid esters, ethyl acetate etc.；The present embodiment only lists partial solvent, every to dissolve the solvent of macromolecule resin, at this
In the protection domain of inventive embodiments.
Dispersant is made up of at least one of following：Polyethylene glycol, polyvinylpyrrolidone, polyacrylic acid, polyethylene
Alcohol etc.；The present embodiment only lists part dispersant, every in above-mentioned solvent, to disperse the dispersant of high dielectric grain,
In the protection domain of the embodiment of the present invention.
During implementing, macromolecule resin and high dielectric grain are dissolved in solvent, and addition point in a solvent
Powder, the effect of dispersant is primarily to make high dielectric grain may be uniformly dispersed in the solvent dissolved with macromolecule resin.
After high dielectric grain is dispersed in the solvent dissolved with macromolecule resin, the solvent can be sprayed on color film
On layer, heat cure is then carried out, wherein, heat curing temperature is 100 DEG C -180 DEG C, and hardening time is relevant with solidification temperature, Gu
The change time is 10min-90min, and after heat cure, solid content is 50%-90%, and the shrinkage ratio before and after solidification is less than 5%, after solidification
The thickness of obtained hard mask layer is between 10 μm to 30 μm.
If 2) adulterate high dielectric grain in hard mask layer, hard mask layer passes through UV-curing by weight by following component
Chemical industry skill is made：
High dielectric grain：10~60 parts, organic monomer：50-80 parts, diluent：0.1-10 parts, light trigger：0.1-5
Part, stabilizer：0.1-5 parts, component sum described above is 100 parts；
Wherein, the organic monomer includes at least one of following (methyl) acrylate monomer：
(methyl) hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, (methyl) acrylic acid
Isobornyl thiocyanoacetate, (methyl) acrylic acid tetrahydrofuran ester, ethyoxyl (methyl) acrylate, (methyl) dodecyl acrylate, (first
Base) ten ester of acrylic acid, (methyl) tridecyl acrylate.
The above-mentioned organic monomer listed, after solidification crosslinking, can obtain the higher methacrylic height of hardness poly-
Thing.The possible implementation of organic monomer schematically is listed it will be understood by those skilled in the art that above are only, specific
In implementation process, the organic monomer of high polymer can be obtained after every crosslinking, be may apply in the present embodiment.
Diluent is made up of at least one of following：Tripropylene glycol diacrylate, trimethylolpropane tris acrylic acid
Ester, ethoxylated trimethylolpropane triacrylate, the acrylate of dipentaerythrite six, 1,6-HD methoxyl group list third
Olefin(e) acid ester, ethoxylation neopentyl glycol methoxyl group mono acrylic ester etc.；On the one hand diluent in the present embodiment plays diluting effect,
The liquid of hard mask layer is set to be partial to spraying；On the other hand crosslinked action is played again.The present embodiment only lists portion of diluent, other
Here is omitted for diluent the present embodiment.
Light trigger is made up of at least one of following：Aromatic diazo salt, aromatic sulfonium salts, aromatic iodonium salt or two cyclopentadienyls
Molysite, polyvinyl cinnamate, poly- Chinese cassia tree fork malonic acid glycol ester polyester etc.；The effect of light trigger is in colloid absorbing
After ultraviolet luminous energy, free radical or ion are produced through decomposing, and then triggers organic monomer polymerization crosslinking into network structure.The present embodiment
Part light trigger is only listed, here is omitted for other light trigger the present embodiment.
Stabilizer is made up of at least one of following：Hydroquinones, p methoxy phenol, 1,4-benzoquinone, 2,6 12 tertiary fourths
Base cresols, phenothiazine, anthraquinone etc..Further polymerization occurs for polymerizate when stabilizer is for reducing storage, and raising is deposited
Store up stability.
During implementing, the solvent after can this be diluted is sprayed on color film layer, then carries out ultraviolet light
Solidification, ultraviolet wavelength is less than 400nm, and hardening time is 10s~60s, and after ultraviolet light solidification, solid content is 50%-90%, Gu
Shrinkage ratio before and after changing is less than 2%, and the thickness of the hard mask layer obtained after solidification is between 10 μm to 20 μm.
It will be understood by those skilled in the art that Fig. 1 embodiments only schematically illustrate the encapsulation of fingerprint Identification sensor
Structure.During implementing, can also further it be changed on the basis of the fingerprint Identification sensor encapsulating structure
Enter.Several specific embodiments are taken to illustrate below.
Fig. 4 is the diagrammatic cross-section two of fingerprint Identification sensor encapsulating structure of the present invention.The fingerprint that the present embodiment is provided is known
Individual sensor encapsulating structure includes：Fingerprint Identification sensor that is being set in the top of silicon wafer 402 and being electrically connected with the silicon wafer
403；The color film layer 404 set in the top of fingerprint Identification sensor 403；The hard mask set in the top of color film layer 404
Layer 405；The substrate 401 set below silicon wafer 402.
Substrate 401 is electrically connected with fingerprint Identification sensor 403 by soldered ball 406, but due to fingerprint Identification sensor 403 with
Silicon wafer 402 is electrically connected, then illustrates that substrate 401 can be with the electricity of silicon wafer 402 by soldered ball 406 and fingerprint Identification sensor 403
Connection, i.e., in the present embodiment, silicon wafer 402 is not electrically connected directly with substrate 401, but is known by soldered ball 406 and fingerprint
Individual sensor 403 can indirectly be electrically connected with silicon wafer 402.The main material of the soldered ball 406 of the present embodiment includes main material
Including tin, lead, silver, copper etc..
The substrate 401 can be FPC (Flexible Printed Circuit, abbreviation FPC) or printed circuit
Plate (Printed Circuit Board, abbreviation PCB), or the FPC and PCB set from below to up.Specifically, the PCB with
FPC can be connected by tin cream.
Alternatively, the length of the silicon wafer 402 is less than the length of fingerprint Identification sensor 403.Due to the length of silicon wafer 402
Degree is smaller, then saves the cost of silicon wafer 402.
Alternatively, wire is provided with the silicon wafer 402 of the present embodiment, silicon wafer 402 passes through the wire and fingerprint recognition
Sensor 403 is electrically connected, and the wire can be specifically scolding tin.In addition, between silicon wafer 402 and fingerprint Identification sensor 403 also
Adhesive is provided with, the adhesive is used to bond silicon wafer 402 and fingerprint Identification sensor 403, and plays a part of filling.Should
Adhesive can be specifically epoxy resin (Epoxy), and the adhesive can effectively improve the mechanical strength (not shown) of wire.
Alternatively, epoxy-plastic packaging material (Epoxy Molding are also filled between silicon wafer 402 and substrate 401
Compound, abbreviation EMC) layer 407, the EMC layers 407 not only act as filling effect, can also compensate for silicon wafer 402 and substrate
The difference of thermal coefficient of expansion between 401, prevents moisture damage, and can protect silicon wafer 402.
Fig. 5 is the diagrammatic cross-section three of fingerprint Identification sensor encapsulating structure of the present invention.Fig. 5 embodiments are in Fig. 4 embodiments
On the basis of realize.Specifically, the present embodiment is on the basis of Fig. 4 embodiments, and the encapsulating structure of fingerprint Identification sensor is also wrapped
Housing (Bezel) 408 is included, the housing 408 is arranged on the both sides of silicon wafer 402 and fingerprint Identification sensor 403, specifically, should
The bottom of housing 408 can contact substrate 401.The housing 408 can not only play decoration and protective effect, can also make user
Sense of touch it is more preferable.The material of the housing 408 can be metal material or plastics.
The housing 408 can have various deformation, and the height of housing 408 is identical with the height of hard mask layer 405, it is also possible that
The height of housing 408 is higher than the upper surface (not shown) of hard mask layer 405, in addition, the housing 408 can also be as shown in Figure 6
Oblique form, i.e., in obtuse angle, and housing 408 is not contacted and covered firmly for the upper surface of the inclined one side of housing 408 and hard mask layer 405
The upper surface of film layer 405, or as shown in fig. 7, the upper surface of the inclined one side of housing 408 and hard mask layer 405 in obtuse angle,
And the inclined one side of housing 408 and the upper surface of hard mask layer 405.
For Fig. 4 to Fig. 7, its preparation side's process is specially：It is first that fingerprint Identification sensor 403 and silicon wafer 402 is electrical
Silicon wafer 402, is then connected, then sets mould on substrate 401 by connection by soldered ball 406 with substrate 401 again, the mould
Fingerprint Identification sensor 403 is surrounded, EMC is irrigated into the mould, is located at being formed on substrate 401, parcel fingerprint recognition sensing
Device 403 and the packed layer for not covering the upper surface of fingerprint Identification sensor 403, remove mould afterwards.Then in the table of current structure
Color film layer 404 and hard mask layer 405 are sequentially prepared on face, finally upper side frame 408 is covered at overall module edge again
(Bezel)。
Encapsulating structure shown in Fig. 4 to Fig. 7, encapsulation process is complex.During implementing, it can also use whole
The form of body encapsulation, i.e., first by fingerprint Identification sensor and silicon wafer electric connection, then again by soldered ball by silicon wafer and base
Plate is connected, then sets color film layer and hard mask layer above fingerprint Identification sensor, finally carries out injection molding packaging, obtained envelope
Assembling structure specifically can be as shown in Figs. 8 to 11.
Fig. 8 is the diagrammatic cross-section six of fingerprint Identification sensor encapsulating structure of the present invention.As shown in figure 8, the present embodiment is carried
The fingerprint Identification sensor encapsulating structure of confession includes：Fingerprint that is being set in the top of silicon wafer 402 and being electrically connected with the silicon wafer
Identification sensor 403；The color film layer 404 set in the top of fingerprint Identification sensor 403；Set in the top of color film layer 404
The hard mask layer 405 put；The substrate 401 set below silicon wafer 402.It will be understood by those skilled in the art that above-mentioned encapsulation
Structure is overall package.Then housing 408 is set in the both sides of silicon wafer 402 and fingerprint Identification sensor 403.The present embodiment exists
It is semiclosed pattern, i.e. housing 408 is not overlapped on hard mask layer 405 when housing 408 is set.Now housing 408 and substrate
The structure of 401 compositions, equivalent to mould.Now, in injection molding packaging, it can be irrigated by the opening that does not overlap into the mould
EMC, is located on substrate 401 with being formed, and is wrapped up fingerprint Identification sensor 403, color film layer 404, hard mask layer 405 and is not covered
The packed layer of the upper surface of hard mask layer 405.
In the present embodiment, substrate 401 is electrically connected with fingerprint Identification sensor 403 by soldered ball 406, and because fingerprint is known
Individual sensor 403 is electrically connected with silicon wafer 402, then illustrates that substrate 401 can be with by soldered ball 406 and fingerprint Identification sensor 403
Electrically connected with silicon wafer 402, i.e., in the present embodiment, silicon wafer 402 is not electrically connected directly with substrate 401, but passes through weldering
Ball 406 and fingerprint Identification sensor 403 can indirectly be electrically connected with silicon wafer 402.The main material of the soldered ball 406 of the present embodiment
Include tin, lead, silver, copper etc. including main material.
The substrate 401 can be FPC (Flexible Printed Circuit, abbreviation FPC) or printed circuit
Plate (Printed Circuit Board, abbreviation PCB), or the FPC and PCB set from below to up.Specifically, the PCB with
FPC can be connected by tin cream.
Alternatively, the length of the silicon wafer 402 is less than the length of fingerprint Identification sensor 403.Due to the length of silicon wafer 402
Degree is smaller, then saves the cost of silicon wafer 402.
Alternatively, wire is provided with the silicon wafer 402 of the present embodiment, silicon wafer 402 passes through the wire and fingerprint recognition
Sensor 403 is electrically connected, and the wire can be specifically scolding tin.In addition, between silicon wafer 402 and fingerprint Identification sensor 403 also
Adhesive is provided with, the adhesive is used to bond silicon wafer 402 and fingerprint Identification sensor 403, and plays a part of filling.Should
Adhesive can be specifically epoxy resin (Epoxy), and the adhesive can effectively improve the mechanical strength (not shown) of wire.
Fig. 9 is the diagrammatic cross-section seven of fingerprint Identification sensor encapsulating structure of the present invention.The overall package knot of the present embodiment
Structure is similar with Fig. 8 embodiments, and here is omitted for the present embodiment.The present embodiment and the difference of Fig. 8 embodiments are that the present embodiment exists
It is enclosed construction when housing 408 is set.Housing 408 is just overlapped on hard mask layer 405, and is had on the side wall of housing 408
EMC is irrigated in standby fill orifice 409, the mould that can be made up of fill orifice 409 to housing 408 and substrate 401, so as to realize last
Encapsulation.
Figure 10 is the diagrammatic cross-section eight of fingerprint Identification sensor encapsulating structure of the present invention.The overall package knot of the present embodiment
Structure is similar with Fig. 8 embodiments, and here is omitted for the present embodiment.The present embodiment and the difference of Fig. 8 embodiments are that the present embodiment exists
It is enclosed construction when housing 408 is set.The part of housing 408 is overlapped on hard mask layer 405, and is had on the side wall of housing 408
EMC is irrigated in standby fill orifice 409, the mould that can be made up of fill orifice 409 to housing 408 and substrate 401, so as to realize last
Encapsulation.
Figure 11 is the diagrammatic cross-section nine of fingerprint Identification sensor encapsulating structure of the present invention.The overall package knot of the present embodiment
Structure is similar with Fig. 8 embodiments, and here is omitted for the present embodiment.The present embodiment and the difference of Fig. 8 embodiments are that the present embodiment exists
It is enclosed construction when housing 408 is set.Housing 408 is just overlapped on hard mask layer 405, and is had on the side wall of housing 408
EMC is irrigated in standby fill orifice 409, the mould that can be made up of fill orifice 409 to housing 408 and substrate 401, and outside mould
Packed layer 410 is realized, so as to realize last encapsulation.
The fingerprint Identification sensor encapsulating structure that the present embodiment is provided, it is possible to use frame carries out the perfusion of capsulation material,
Packed layer is formed, without setting mould to form packed layer, and it is follow-up without mould is removed, it is effectively simplified fingerprint knowledge
The preparation technology flow of other module, improves preparation efficiency.Also, the protuberance of the frame can more efficiently be fixed described
The structure of packed layer and its enclosed inside, improves device reliability.
Figure 12 is the schematic flow sheet of fingerprint Identification sensor method for packing embodiment one of the present invention.As shown in figure 12, originally
The method that embodiment is provided includes：
Step 1201, the top setting fingerprint Identification sensor in silicon wafer, fingerprint Identification sensor are electrically connected with silicon wafer
Connect；
Step 1202, the top setting color film layer in fingerprint Identification sensor；
Step 1203, at least one layer is set in hard mask layer, hard mask layer and color film layer to mix above color film layer
Miscellaneous high dielectric grain；
Step 1204, silicon wafer is arranged on substrate.
In step 1201, there is no the side of circuit by way of wire bonding and upside-down mounting silicon wafer in silicon wafer, will
Silicon wafer is inverted on the fingerprint Identification sensor made, i.e., set fingerprint Identification sensor in the top of silicon wafer,
Silicon wafer and fingerprint Identification sensor are connected by wire.Further, can also be between silicon wafer and fingerprint Identification sensor
Filling adhesive, allows silicon wafer and fingerprint Identification sensor firmly to connect.
In step 1202, spraying or silk-screen color film layer above fingerprint Identification sensor, those skilled in the art can
To understand, according to the difference of color Film color, spraying or silk-screen mode are also slightly different.
When color film layer for it is dark when, can directly above fingerprint Identification sensor color film layer, then carry out heat cure
Or photocuring, after the solidification is complete, if the effect of color film layer not enough, can proceed with the technique brushed and solidified, Zhi Daoyan
The color effects of color film layer reach requirement.
When color film layer is light color, dark film layer can be applied as background color in fingerprint Identification sensor top now, in dark color
After film layer solidification, then apply light film layer.
In step 1203, hard mask layer is sprayed above color film layer, is then melted into by photocuring or UV-curing
Shape.
In step 1204, silicon wafer is arranged on substrate.
The method for packing that the present embodiment is provided, by setting fingerprint Identification sensor, fingerprint recognition in the top of silicon wafer
Sensor is electrically connected with silicon wafer；In the top of fingerprint Identification sensor, color film layer is set；Set above color film layer hard
At least one layer high dielectric grain of doping in mask layer, hard mask layer and color film layer；Silicon wafer is arranged on substrate, prepared
Obtained fingerprint Identification sensor encapsulating structure, not only make it that fingerprint Identification sensor is more obvious to the sensing of electric capacity, can be with
The recognition accuracy of fingerprint Identification sensor is improved, the identification distance of fingerprint Identification sensor can also be increased.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (12)
1. a kind of fingerprint Identification sensor encapsulating structure, it is characterised in that including：
Fingerprint Identification sensor that is square setting on silicon and being electrically connected with the silicon wafer；
The color film layer set above the fingerprint Identification sensor；
The hard mask layer set in the top of the color film layer；
The substrate set below the silicon wafer；
Wherein, at least one layer high dielectric grain of doping in the hard mask layer and the color film layer；
If adulterating high dielectric grain in the hard mask layer, the hard mask layer passes through heat cure by weight by following component
Technique is made：High dielectric grain：10~60 parts, macromolecule resin：50-80 parts, solvent：0.1-10 parts, dispersant：0.1-5 parts,
Component sum described above is 100 parts；Wherein, the macromolecule resin is comprising at least one of following：Phenolic resin, epoxy
Resin, makrolon, acrylic resin or polyurethane resin；Or,
The hard mask layer is made up of UV curing process by weight of following component：High dielectric grain：10~60 parts,
Organic monomer：50-80 parts, diluent：0.1-10 parts, light trigger：0.1-5 parts, stabilizer：0.1-5 parts, component described above
Sum is 100 parts；Wherein, the organic monomer includes at least one of following (methyl) acrylate monomer：(methyl) third
Olefin(e) acid hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, (methyl) isobornyl acrylate, (methyl)
Acrylic acid tetrahydrofuran ester, ethyoxyl (methyl) acrylate, (methyl) dodecyl acrylate, the ester of (methyl) acrylic acid ten, (first
Base) tridecyl acrylate.
2. encapsulating structure according to claim 1, it is characterised in that the thickness of the hard mask layer and the color film layer
Thickness sum be less than or equal to 100 μm.
3. encapsulating structure according to claim 2, it is characterised in that the thickness of the hard mask layer is more than or equal to 10 μm
And less than or equal to 50 μm.
4. encapsulating structure according to claim 2, it is characterised in that the thickness of the color film layer is more than or equal to 5 μm
And less than or equal to 50 μm.
5. encapsulating structure according to claim 2, it is characterised in that the thickness of the hard mask layer and the color film layer
Thickness sum be less than or equal to 50 μm.
6. encapsulating structure according to claim 5, it is characterised in that the thickness of the hard mask layer is more than or equal to 10
μm and less than or equal to 30 μm.
7. encapsulating structure according to claim 5, it is characterised in that the thickness of the color film layer is more than or equal to 10 μm
And less than or equal to 30 μm.
8. the encapsulating structure according to any one of claim 1 to 7, it is characterised in that the high dielectric grain includes as follows
In it is any or its combination：
Metatitanic acid salt particle；
Niobic acid salt particle.
9. encapsulating structure according to claim 8, it is characterised in that the size of the high dielectric grain is more than or equal to
0.05 μm and less than or equal to 5 μm.
10. encapsulating structure according to claim 9, it is characterised in that if adulterating high dielectric grain in the color film layer,
Then the color film layer is made up of heat curing process by weight of following component：
High dielectric grain：5~30 parts, color material：30-80 parts, macromolecule resin：20-50 parts, solvent：0.1-10 parts, disperse
Agent：0.1-5 parts, component sum described above is 100 parts；
Wherein, the macromolecule resin includes at least one of following：
Phenolic resin, epoxy resin, makrolon, acrylic resin, epoxy resin, polyurethane resin or organic siliconresin.
11. encapsulating structure according to claim 9, it is characterised in that if adulterating high dielectric grain in the color film layer,
Then the color film layer is made up of UV curing process by weight of following component：
Adulterate high dielectric grain：5~30 parts, color material：30-80 parts, organic monomer：20-50 parts, diluent：0.1-10 parts,
Light trigger：0.1-5 parts, stabilizer：0.1-5 parts, component sum described above is 100 parts；
Wherein, the organic monomer includes at least one of following (methyl) acrylate monomer：
(methyl) hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, the different ice of (methyl) acrylic acid
Piece ester, (methyl) acrylic acid tetrahydrofuran ester, ethyoxyl (methyl) acrylate, (methyl) dodecyl acrylate, (methyl) third
The ester of olefin(e) acid ten, (methyl) tridecyl acrylate.
12. a kind of fingerprint Identification sensor method for packing, it is characterised in that including：
Fingerprint Identification sensor is set in the top of silicon wafer, the fingerprint Identification sensor is electrically connected with the silicon wafer；
In the top of the fingerprint Identification sensor, color film layer is set；
At least one layer doping in hard mask layer, the hard mask layer and the color film layer is set above the color film layer
High dielectric grain；
The silicon wafer is arranged on substrate；
Wherein, if adulterating high dielectric grain in the hard mask layer, the hard mask layer is passed through by weight by following component
Heat curing process is made：High dielectric grain：10~60 parts, macromolecule resin：50-80 parts, solvent：0.1-10 parts, dispersant：
0.1-5 parts, component sum described above is 100 parts；Wherein, the macromolecule resin is comprising at least one of following：Phenolic aldehyde
Resin, epoxy resin, makrolon, acrylic resin or polyurethane resin；Or,
The hard mask layer is made up of UV curing process by weight of following component：High dielectric grain：10~60 parts,
Organic monomer：50-80 parts, diluent：0.1-10 parts, light trigger：0.1-5 parts, stabilizer：0.1-5 parts, component described above
Sum is 100 parts；Wherein, the organic monomer includes at least one of following (methyl) acrylate monomer：(methyl) third
Olefin(e) acid hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, (methyl) isobornyl acrylate, (methyl)
Acrylic acid tetrahydrofuran ester, ethyoxyl (methyl) acrylate, (methyl) dodecyl acrylate, the ester of (methyl) acrylic acid ten, (first
Base) tridecyl acrylate.
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| CN104637892B (en) * | 2015-01-27 | 2017-11-24 | 华进半导体封装先导技术研发中心有限公司 | The encapsulating structure and its method for packing of fingerprint recognition module |
| KR20160143071A (en) | 2015-06-04 | 2016-12-14 | 앰코 테크놀로지 코리아 주식회사 | Package of finger print sensor |
| CN105005762B (en) * | 2015-06-24 | 2018-10-12 | 广东金龙机电有限公司 | A kind of fingerprint module making method and fingerprint module |
| TWI560619B (en) * | 2016-03-01 | 2016-12-01 | Chipmos Technologies Inc | Manufacturing method and manufacturing apparatus of fingerprint identification chip package structure |
| CN106407967B (en) * | 2016-12-02 | 2019-11-08 | 信利光电股份有限公司 | A kind of fingerprint mould group and its applying method and application |
| CN109670372A (en) * | 2017-10-13 | 2019-04-23 | 南昌欧菲生物识别技术有限公司 | Fingerprint mould group |
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| CN101817686A (en) * | 2010-05-24 | 2010-09-01 | 湖南博深实业有限公司 | Doped and modified barium titanate composite particle and preparation method thereof |
| CN103793689A (en) * | 2014-01-27 | 2014-05-14 | 南昌欧菲光科技有限公司 | Fingerprint recognition sensor packaging structure, electronic device and method for manufacturing fingerprint recognition sensor |
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| CN101616869A (en) * | 2007-03-02 | 2009-12-30 | 大塚化学株式会社 | Set has titanate, its manufacture method of alkali metal titanate and contains the resin combination that set has the titanate of alkali metal titanate |
| CN101817686A (en) * | 2010-05-24 | 2010-09-01 | 湖南博深实业有限公司 | Doped and modified barium titanate composite particle and preparation method thereof |
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Address after: 330029 No. 1189 Jingdong Avenue, Nanchang high tech Zone, Jiangxi Patentee after: Jiangxi OMS Microelectronics Co.,Ltd. Patentee after: Nanchang OFilm Tech. Co.,Ltd. Patentee after: Ophiguang Group Co.,Ltd. Patentee after: SUZHOU OFILM TECH Co.,Ltd. Address before: 330029 No. 1189 Jingdong Avenue, Nanchang high tech Zone, Jiangxi Patentee before: OFilm Microelectronics Technology Co.,Ltd. Patentee before: Nanchang OFilm Tech. Co.,Ltd. Patentee before: OFilm Tech Co.,Ltd. Patentee before: SUZHOU OFILM TECH Co.,Ltd. Address after: 330029 No. 1189 Jingdong Avenue, Nanchang high tech Zone, Jiangxi Patentee after: OFilm Microelectronics Technology Co.,Ltd. Patentee after: Nanchang OFilm Tech. Co.,Ltd. Patentee after: OFilm Tech Co.,Ltd. Patentee after: SUZHOU OFILM TECH Co.,Ltd. Address before: 330029 No. 1189 Jingdong Avenue, Nanchang high tech Zone, Jiangxi Patentee before: NANCHANG OFILM BIO-IDENTIFICATION TECHNOLOGY Co.,Ltd. Patentee before: Nanchang OFilm Tech. Co.,Ltd. Patentee before: Shenzhen OFilm Tech Co.,Ltd. Patentee before: SUZHOU OFILM TECH Co.,Ltd. |
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