CN204406424U - Fingerprint Identification sensor encapsulating structure - Google Patents
Fingerprint Identification sensor encapsulating structure Download PDFInfo
- Publication number
- CN204406424U CN204406424U CN201420484025.9U CN201420484025U CN204406424U CN 204406424 U CN204406424 U CN 204406424U CN 201420484025 U CN201420484025 U CN 201420484025U CN 204406424 U CN204406424 U CN 204406424U
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- China
- Prior art keywords
- fingerprint identification
- identification sensor
- hard mask
- mask layer
- silicon wafer
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The utility model embodiment provides a kind of fingerprint Identification sensor encapsulating structure, and this encapsulating structure comprises: on silicon side arrange and the fingerprint Identification sensor be electrically connected with described silicon wafer; The color rete arranged above described fingerprint Identification sensor; The hard mask layer arranged above described color rete; The substrate arranged below described silicon wafer; Wherein, the thickness of described hard mask layer and the thickness sum of described color rete are less than or equal to 100 μm.The encapsulating structure that the present embodiment provides, can improve the recognition accuracy of fingerprint Identification sensor.
Description
Technical field
The utility model embodiment relates to bio-identification module packaging technology, particularly relates to a kind of fingerprint Identification sensor encapsulating structure.
Background technology
Along with the development of science and technology, sense electronics survey technology is employed more and more.Fingerprint recognition (finger printing) technology utilizing sense electronics survey technology to realize at present, be the most ripe at present and low-cost biometrics identification technology, it can be applied in the fields such as notebook computer, mobile phone, automobile, bank.
In prior art, utilize the fingerprint Identification sensor that biometrics identification technology realizes, the capacitance type fingerprint identification sensor of matrix form is mainly formed by complementary metal oxide semiconductor (CMOS) (Complementary Metal Oxide Semiconductor is called for short CMOS) technique.
But, under fingerprint Identification sensor is placed in the unconspicuous control knob of capacitance sensing or display element by existing capacitance type fingerprint identification sensor encapsulating structure, make capacitance type fingerprint identification sensor capacitance sensing DeGrain, cause the recognition accuracy of capacitance type fingerprint identification sensor not high.
Utility model content
The utility model embodiment provides a kind of fingerprint Identification sensor encapsulating structure, to improve the recognition accuracy of fingerprint Identification sensor.
The utility model embodiment provides a kind of fingerprint Identification sensor encapsulating structure, comprising:
On silicon side arrange and the fingerprint Identification sensor be electrically connected with described silicon wafer;
The color rete arranged above described fingerprint Identification sensor;
The hard mask layer arranged above described color rete;
The substrate arranged below described silicon wafer;
Wherein, one deck is had at least to adulterate high dielectric grain in described hard mask layer and described color rete.
In an embodiment of the present utility model, the thickness of described hard mask layer and the thickness sum of described color rete are less than or equal to 100 μm.
Alternatively, the thickness of described hard mask layer is more than or equal to 10 μm and is less than or equal to 50 μm.
In an embodiment of the present utility model, the thickness of described color rete is more than or equal to 5 μm and is less than or equal to 50 μm.
In an embodiment of the present utility model, the thickness of described hard mask layer and the thickness sum of described color rete are less than or equal to 50 μm.
In an embodiment of the present utility model, the thickness of described hard mask layer is for being more than or equal to 10 μm and being less than or equal to 30 μm.
In an embodiment of the present utility model, the thickness of described color rete is more than or equal to 10 μm and is less than or equal to 30 μm.
In an embodiment of the present utility model, described high dielectric grain comprises arbitrary or its combination as follows:
Titanate particle;
Niobate particle.
In an embodiment of the present utility model, the size of described high dielectric grain is more than or equal to 0.05 μm and is less than or equal to 5 μm.
The fingerprint Identification sensor encapsulating structure that the present embodiment provides, this encapsulating structure comprises: on silicon side arrange and the fingerprint Identification sensor be electrically connected with this silicon wafer; The color rete arranged above fingerprint Identification sensor; The hard mask layer arranged above color rete; The substrate arranged below silicon wafer, wherein, in hard mask layer or color rete, has one deck at least doped with high dielectric grain, thus not only make the sensing of fingerprint Identification sensor to electric capacity more obvious, the recognition accuracy of fingerprint Identification sensor can be improved, the decipherment distance of fingerprint Identification sensor can also be increased.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the diagrammatic cross-section one of the utility model fingerprint Identification sensor encapsulating structure;
Fig. 2 is the utility model fingerprint recognition scene schematic diagram;
Fig. 3 is the utility model fingerprint recognition principle schematic;
Fig. 4 is the diagrammatic cross-section two of the utility model fingerprint Identification sensor encapsulating structure;
Fig. 5 is the diagrammatic cross-section three of the utility model fingerprint Identification sensor encapsulating structure;
Fig. 6 is the diagrammatic cross-section four of the utility model fingerprint Identification sensor encapsulating structure;
Fig. 7 is the diagrammatic cross-section five of the utility model fingerprint Identification sensor encapsulating structure;
Fig. 8 is the schematic flow sheet of the utility model fingerprint Identification sensor method for packing embodiment one;
Fig. 9 is the diagrammatic cross-section seven of fingerprint Identification sensor encapsulating structure of the present invention;
Figure 10 is the diagrammatic cross-section eight of fingerprint Identification sensor encapsulating structure of the present invention;
Figure 11 is the diagrammatic cross-section nine of fingerprint Identification sensor encapsulating structure of the present invention;
Figure 12 is the schematic flow sheet of fingerprint Identification sensor method for packing embodiment one of the present invention.
Embodiment
For making the object of the utility model embodiment, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Fig. 1 is the diagrammatic cross-section one of the utility model fingerprint Identification sensor encapsulating structure.The fingerprint Identification sensor that the present embodiment provides is specifically as follows capacitance type fingerprint identification sensor, can with in the electronic device, and this electronic equipment can be smart phone, touch pad, mobile computing device, electrical equipment, the panel of vehicle or fuselage etc.As shown in Figure 1, the fingerprint Identification sensor encapsulating structure that the present embodiment provides comprises:
Above silicon wafer 102 arrange and the fingerprint Identification sensor 103 be electrically connected with this silicon wafer 102;
The color rete 104 arranged above fingerprint Identification sensor 103;
The hard mask layer 105 arranged above described color rete 104;
The substrate 101 arranged below described silicon wafer 102.
In the present embodiment, silicon wafer 102 and the independent setting of fingerprint Identification sensor 103, silicon wafer 102 is connected with the mode of fingerprint Identification sensor 103 by electrical connection.Arranged by the independence of silicon wafer 102 and fingerprint Identification sensor 103, lower to the requirement of silicon wafer 102, make the cost of fingerprint Identification sensor encapsulating structure lower.
The color rete 104 that fingerprint Identification sensor 103 is arranged, not only has color effects, can also make the element of fingerprint Identification sensor can not be visible to user immediately.
The hard mask layer 105 that color rete 104 is arranged, the flatness of hard mask layer 105 is less than 10 μm.Hard mask layer 105, mainly for the protection of fingerprint Identification sensor and silicon wafer, prevents user in pressing or the improper damage by depressing fingerprint Identification sensor and silicon wafer many times.It will be appreciated by those skilled in the art that, the fingerprint Identification sensor encapsulating structure that the present embodiment provides can also with control knob with the use of, control knob can be placed on hard mask layer 105, now, the top of hard mask layer 105 has concave shape, so, when user's finger is directed into concave shape, user points and can be located well, to carry out fingerprint recognition.
Further, in the hard mask layer that the present embodiment provides or color rete, one deck is had at least doped with high dielectric grain.The high dielectric grain of this doping can improve the capacitive sensing of fingerprint Identification sensor.In the present embodiment, the size of high dielectric grain is more than or equal to 0.05 micron (μm) and is less than or equal to 5 μm.High dielectric grain can be titanate particle or niobate particle.For titanate particle, be specifically as follows: barium titanate (BaTiO
3), calcium titanate (CaTiO
3), strontium titanates (SrCaTiO
3) etc.
For niobate particle, be specifically as follows: barium sodium niobate (BNN) (Ba
2naNb
5o
15), strontium potassium niobate (KSr
2nb
5o
15), potassium niobate tantalum (KTaNbO
3) etc.
In the present embodiment, except titanate particle or niobate particle, can also be burnt cadmium niobate (Cd
2nb
2o
7) particle, tungstic acid (WO
3).For concrete high dielectric grain, the present embodiment repeats no more herein, as long as specific inductive capacity is at 1 GHz greater than 10.
After the color rete solidification of the high dielectric grain of the doping finally obtained, specific inductive capacity at 1 GHz can reach more than 4.
After the hard mask layer solidification of the high dielectric grain of the doping finally obtained, specific inductive capacity at 1 GHz can reach more than 4.
Below with a specific embodiment, composition graphs 2 and Fig. 3 are specifically described the principle of fingerprint Identification sensor to the capacitive sensing of user fingerprints.The fingerprint Identification sensor of the present embodiment can draw formula (sweep or swipe) for wiping, and also can be push type (touch or area), the present embodiment be particularly limited to.
Fig. 2 is the utility model fingerprint recognition scene schematic diagram.As shown in Figure 2, the finger of people comprises line peak and line paddy, when pointing the hard mask layer pressing above this fingerprint Identification sensor close, fingerprint Identification sensor presents capacitor type connection mode, when people's finger is placed on above fingerprint Identification sensor, finger serves as the another one electrode of fingerprint Identification sensor.Due to finger existing line peak and line paddy, deep mixed, each capacitance voltage of the capacitor array causing fingerprint Identification sensor to comprise is different.The line peak that user points 1 fingerprint is 11, and when pressing hard mask layer, fingerprint Identification sensor senses and is phase line peak 11a.
Fig. 3 is the utility model fingerprint recognition principle schematic.Capacitance type fingerprint identification sensor comprises multiple capacitive sensor unit.As shown in Figure 3, figure 3 illustrates 3 capacitive sensor unit 20, capacitive sensor unit 20 comprises reference capacitance 325, and sensing electrode 31 and 32.Please continue to refer to Fig. 2, the line peak that user points 1 fingerprint is 11, when pressing hard mask layer, the electric capacity between the sensing electrode 31 in line peak 11 and fingerprint recognition sensing is 324, and the electric capacity between the sensing electrode 31 on line paddy 12 and fingerprint Identification sensor is 324 '.As shown in Figure 3, line peak is different with the distance between line paddy and the sensing electrode 31 on fingerprint Identification sensor, thus the capacitance produced is different, silicon wafer is integrated with logical circuit, this logical circuit, according to capacitance, generates fingerprint image by corresponding algorithm, and then realizes fingerprint recognition.
It will be appreciated by those skilled in the art that, above-described embodiment only schematically illustrates a kind of method by electric capacity identification fingerprint, in specific implementation process, multiple in addition by the method for electric capacity identification fingerprint, but principle is roughly the same, be all utilize the electric capacity of " line peak " and " line paddy " correspondence generation that fingerprint comprises different, to different capacitances through process, then generate fingerprint image.For other the method by electric capacity identification fingerprint, the present embodiment repeats no more herein.
It will be understood by those skilled in the art that electric capacity C=ε S/d (ε is the specific inductive capacity of finger and induced electricity contrasted between solid dielectric, and S is polar plate area, and d is the distance between finger and induction electrode).In the present embodiment, medium between the finger of people and induction electrode comprises two kinds, one is air, a kind of is the color rete and hard mask layer that arrange above fingerprint Identification sensor, due in the hard mask layer in the present embodiment or color rete, has one deck at least doped with high dielectric grain, then the specific inductive capacity of hard mask layer or color rete increases, thus the electric capacity of finger and (324 ' and 324 corresponding capacitor) between induction electrode can be increased, thus make the sensing of fingerprint Identification sensor to electric capacity more obvious, the recognition accuracy of capacitance type fingerprint identification sensor can be improved, further, when electric capacity is constant, if specific inductive capacity increases, then distance d will increase, namely the present embodiment can also increase the decipherment distance of fingerprint Identification sensor.
It will be understood by those skilled in the art that Fig. 2 and Fig. 3 basically illustrates the push type fingerprint recognition principle of finger stationary contact hard mask layer.Draw for formula for wiping, when carrying out fingerprint recognition, finger can slide by user above hard mask layer, when finger slips on hard mask layer, fingerprint Identification sensor can gather several fingerprint images, and reconstruct whole fingerprint image, the final fingerprint image forming whole finger by detecting the initial position of finger, the speed of finger sliding and direction.When fingerprint Identification sensor gathers each width fingerprint image, its acquisition mode and Fig. 3 embodiment similar.Therefore the present embodiment also can increase the recognition accuracy of scratching formula fingerprint Identification sensor.
The fingerprint Identification sensor encapsulating structure that the present embodiment provides, comprising: on silicon side arrange and the fingerprint Identification sensor be electrically connected with this silicon wafer; The color rete arranged above fingerprint Identification sensor; The hard mask layer arranged above color rete; The substrate arranged below silicon wafer, wherein, in hard mask layer or color rete, has one deck at least doped with high dielectric grain, thus not only make the sensing of fingerprint Identification sensor to electric capacity more obvious, the recognition accuracy of fingerprint Identification sensor can be improved, the decipherment distance of fingerprint Identification sensor can also be increased.
Alternatively, when fingerprint Identification sensor distance finger distant time, the ability of fingerprint Identification sensor perception fingerprint is more weak, in order to ensure that the fingerprint Identification sensor in fingerprint Identification sensor encapsulating structure effectively can perceive fingerprint, the thickness of the present embodiment to the thickness of hard mask layer and color rete controls, and the thickness of hard mask layer and the thickness sum of color rete are less than or equal to 100 μm in the present embodiment.
In specific implementation process, can be divided into following possible implementation, a kind of possible implementation is: the thickness of hard mask layer is for being more than or equal to 10 μm and being less than or equal between 50 μm, and the thickness sum of hard mask layer and color rete is less than 100 μm.
Another kind of possible implementation, the thickness of color rete is more than or equal to 5 μm and is less than or equal to 50 μm, and the thickness sum of hard mask layer and color rete is less than 100 μm.
Another possible implementation, the thickness of hard mask layer is more than or equal to 10 μm and is less than or equal to 50 μm, and the thickness of color rete is more than or equal to 5 μm and is less than or equal to 50 μm.
Further, in order to make fingerprint Identification sensor encapsulating structure can apply in multiple occasion, the thickness of the two can be made thin as much as possible, to reduce the thickness of fingerprint Identification sensor at vertical direction.Now, the thickness of hard mask layer and the thickness sum of color rete are less than or equal to 50 μm.
In specific implementation process, can be divided into following possible implementation, a kind of possible implementation is: the thickness of hard mask layer is more than or equal to 10 μm and is less than or equal to 30 μm, and the thickness sum of hard mask layer and color rete is less than 50 μm.
Another kind of possible implementation, the thickness of color rete is more than or equal to 10 μm and is less than or equal to 30 μm, and the thickness sum of hard mask layer and color rete is less than 30 μm.
Another possible implementation, the thickness of hard mask layer is more than or equal to 10 μm and is less than or equal to 30 μm, and the thickness of color rete is more than or equal to 10 μm and is less than or equal to 30 μm.
Adopt specific embodiment below, the raw materials of hard mask layer and color rete and preparation method are described in detail.
Color rete
1) if adulterate high dielectric grain in color rete, then color rete is made up by heat curing process by weight of following component:
High dielectric grain: 5 ~ 30 parts, color material: 30-80 part, macromolecule resin: 20-50 part, solvent: 0.1-10 part, spreading agent: 0.1-5 part, the above component sum is 100 parts;
Wherein, described macromolecule resin comprises at least one as follows:
Phenolics, epoxy resin, polycarbonate, acryl resin, epoxy resin, urethane resin or organic siliconresin etc.In the present embodiment, do not have particular/special requirement to the hardness of macromolecule resin, every macromolecule resin that can carry out brushing and heat curing, all may be used in the present embodiment.
Solvent is made up of at least one in following: solvent is ethanol, normal butyl alcohol, isobutyl alcohol, ethylene glycol-ether, butyl acetate, cyclohexanone, glycidol ether, tetrahydrofuran, methyl ethyl ketone, cyclohexanone, propylene glycol, DMF, ethyl cellosolve acetate, ethyl acetate etc.; The present embodiment only lists partial solvent, every solvent that can dissolve macromolecule resin, all in the protection domain of the utility model embodiment.
Described spreading agent is made up of at least one in following: polyglycol, polyvinylpyrrolidone, polyacrylic acid, polyvinyl alcohol (PVA) etc.; The present embodiment only lists part spreading agent, everyly in above-mentioned solvent, can disperse the spreading agent of high dielectric grain, all in the protection domain of the utility model embodiment.
Color material can be nanometer or micron-sized particle, as titanium dioxide, carbon black etc., also can be the coloured organic liquid of band.
In specific implementation process, macromolecule resin and high dielectric grain and color material are dissolved in solvent, and adding spreading agent in a solvent, the effect of spreading agent is mainly dissolved with in the solvent of macromolecule resin to make high dielectric grain and color material be dispersed in.
Be dispersed at high dielectric grain and color material after in the solvent being dissolved with macromolecule resin, this solvent can be brushed on fingerprint Identification sensor, then carry out heat curing, wherein, heat curing temperature is 100 DEG C-180 DEG C, set time is relevant with solidification temperature, set time is 10min-90min, and after heat curing, solid content is 50%-90%, shrinkage ratio before and after solidification is less than 5%, and the thickness of the color rete obtained after solidification is between 10 μm to 30 μm.
2) if adulterate high dielectric grain in color rete, then color rete is made up by UV curing process by weight of following component:
Adulterate high dielectric grain: 5 ~ 30 parts, color material: 30-80 part, organic monomer: 20-50 part, thinning agent: 0.1-10 part, light trigger: 0.1-5 part, stabilizing agent: 0.1-5 part, and the above component sum is 100 parts;
Wherein, described organic monomer comprises at least one (methyl) acrylate monomer as follows:
(methyl) hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, (methyl) isobornyl acrylate, (methyl) acrylic acid tetrahydrofuran ester, ethoxy (methyl) acrylate, (methyl) dodecyl acrylate, (methyl) acrylic acid ten ester, (methyl) tridecyl acrylate
Color material can be nanometer or micron-sized particle, as titanium dioxide, carbon black etc., also can be the coloured organic liquid of band.
Thinning agent is made up of at least one in following: tripropylene glycol diacrylate, trimethylolpropane triacrylate, ethoxylated trimethylolpropane triacrylate, dipentaerythrite six acrylate, 1,6-hexanediol methoxyl mono acrylic ester, ethoxylation neopentyl glycol methoxyl mono acrylic ester etc., thinning agent in the present embodiment plays diluting effect on the one hand, and the solution of color rete is relatively brushed; Play crosslinked action again on the other hand.The present embodiment only lists portion of diluent, and other thinning agent the present embodiment repeats no more herein.
Light trigger is made up of at least one in following: aromatic diazo salt, aromatic sulfonium salts, aromatic iodonium salt or ferrocene salt, polyvinyl cinnamate, poly-Chinese cassia tree pitch malonic acid glycol ester polyester etc.; The effect of light trigger is after colloid absorbing ultraviolet luminous energy, produces free radical or ion through decomposing, and then initiation organic monomer polymerization crosslinking becomes network structure.The present embodiment only lists part light trigger, and other light trigger the present embodiment repeats no more herein.
Stabilizing agent is made up of at least one in following: p-dihydroxy-benzene, p methoxy phenol, 1,4-benzoquinone, 2,6 one di-t-butyl cresols, phenothiazine, anthraquinone etc.Stabilizing agent is used to polymerizate when minimizing is deposited and further polymerization occurs, and improves storage stability.
In specific implementation process, solvent after this dilution can be brushed on fingerprint Identification sensor, then ultraviolet light polymerization is carried out, ultraviolet wavelength is less than 400nm, set time is 10s ~ 60s, and after ultraviolet light polymerization, solid content is 50%-90%, shrinkage ratio before and after solidification is less than 2%, and the thickness of the color rete obtained after solidification is between 10 μm to 30 μm.
Hard mask layer
When adulterate in hard mask layer high dielectric grain time, the hard mask layer in the present embodiment can be realized by heat curing or UV curing process, is described respectively below.
1) if adulterate high dielectric grain in hard mask layer, then hard mask layer is made up by heat curing process by weight of following component:
High dielectric grain: 10 ~ 60 parts, macromolecule resin: 50-80 part, solvent: 0.1-10 part, spreading agent: 0.1-5 part, the above component sum is 100 parts.
Wherein, described macromolecule resin comprises at least one as follows:
Phenolics, epoxy resin, polycarbonate, acryl resin or urethane resin.
The above-mentioned resin listed, all has higher hardness and physical strength, can ensure the hardness of hard mask layer.It will be understood by those skilled in the art that above are only and schematically list the possible implementation of macromolecule resin, in specific implementation process, every macromolecule resin with high rigidity, all can be applied in the present embodiment.
Solvent is made up of at least one in following: ethanol, normal butyl alcohol, isobutyl alcohol, ethylene glycol-ether, butyl acetate, cyclohexanone, glycidol ether, tetrahydrofuran, methyl ethyl ketone, cyclohexanone, propylene glycol, DMF, ethyl cellosolve acetate, ethyl acetate etc.; The present embodiment only lists partial solvent, every solvent that can dissolve macromolecule resin, all in the protection domain of the utility model embodiment.
Spreading agent is made up of at least one in following: polyglycol, polyvinylpyrrolidone, polyacrylic acid, polyvinyl alcohol (PVA) etc.; The present embodiment only lists part spreading agent, everyly in above-mentioned solvent, can disperse the spreading agent of high dielectric grain, all in the protection domain of the utility model embodiment.
In specific implementation process, macromolecule resin and high dielectric grain are dissolved in solvent, and add spreading agent in a solvent, the effect of spreading agent is mainly dissolved with in the solvent of macromolecule resin to make high dielectric grain be dispersed in.
Be dispersed at high dielectric grain after in the solvent being dissolved with macromolecule resin, can by this solvent spray in color film layer, then carry out heat curing, wherein, heat curing temperature is 100 DEG C-180 DEG C, set time is relevant with solidification temperature, set time is 10min-90min, and after heat curing, solid content is 50%-90%, shrinkage ratio before and after solidification is less than 5%, and the thickness of the hard mask layer obtained after solidification is between 10 μm to 30 μm.
2) if adulterate high dielectric grain in hard mask layer, then hard mask layer is made up by UV curing process by weight of following component:
High dielectric grain: 10 ~ 60 parts, organic monomer: 50-80 part, thinning agent: 0.1-10 part, light trigger: 0.1-5 part, stabilizing agent: 0.1-5 part, the above component sum is 100 parts;
Wherein, described organic monomer comprises at least one (methyl) acrylate monomer as follows:
(methyl) hydroxypropyl acrylate, (methyl) hydroxy-ethyl acrylate, (methyl) hy-droxybutyl, (methyl) isobornyl acrylate, (methyl) acrylic acid tetrahydrofuran ester, ethoxy (methyl) acrylate, (methyl) dodecyl acrylate, (methyl) acrylic acid ten ester, (methyl) tridecyl acrylate.
The above-mentioned organic monomer listed, after curing cross-linked, can obtain the methacrylic superpolymer that hardness is higher.It will be understood by those skilled in the art that above are only and schematically list the possible implementation of organic monomer, in specific implementation process, every crosslinked after can obtain the organic monomer of superpolymer, all can be applied in the present embodiment.
Thinning agent is made up of at least one in following: tripropylene glycol diacrylate, trimethylolpropane triacrylate, ethoxylated trimethylolpropane triacrylate, dipentaerythrite six acrylate, 1,6-hexanediol methoxyl mono acrylic ester, ethoxylation neopentyl glycol methoxyl mono acrylic ester etc.; Thinning agent in the present embodiment plays diluting effect on the one hand, makes the liquid relatively spraying of hard mask layer; Play crosslinked action again on the other hand.The present embodiment only lists portion of diluent, and other thinning agent the present embodiment repeats no more herein.
Light trigger is made up of at least one in following: aromatic diazo salt, aromatic sulfonium salts, aromatic iodonium salt or ferrocene salt, polyvinyl cinnamate, poly-Chinese cassia tree pitch malonic acid glycol ester polyester etc.; The effect of light trigger is after colloid absorbing ultraviolet luminous energy, produces free radical or ion through decomposing, and then initiation organic monomer polymerization crosslinking becomes network structure.The present embodiment only lists part light trigger, and other light trigger the present embodiment repeats no more herein.
Stabilizing agent is made up of at least one in following: p-dihydroxy-benzene, p methoxy phenol, 1,4-benzoquinone, 2,6 one di-t-butyl cresols, phenothiazine, anthraquinone etc.Stabilizing agent is used to polymerizate when minimizing is deposited and further polymerization occurs, and improves storage stability.
In specific implementation process, can by the solvent spray after this dilution in color film layer, then ultraviolet light polymerization is carried out, ultraviolet wavelength is less than 400nm, set time is 10s ~ 60s, and after ultraviolet light polymerization, solid content is 50%-90%, shrinkage ratio before and after solidification is less than 2%, and the thickness of the hard mask layer obtained after solidification is between 10 μm to 20 μm.
It will be understood by those skilled in the art that Fig. 1 embodiment only schematically illustrates the encapsulating structure of fingerprint Identification sensor.In specific implementation process, further can also improve on the basis of this fingerprint Identification sensor encapsulating structure.Take several specific embodiment to be below described.
Fig. 4 is the diagrammatic cross-section two of the utility model fingerprint Identification sensor encapsulating structure.The fingerprint Identification sensor encapsulating structure that the present embodiment provides comprises: above silicon wafer 402 arrange and the fingerprint Identification sensor 403 be electrically connected with this silicon wafer; The color rete 404 arranged above fingerprint Identification sensor 403; The hard mask layer 405 arranged above color rete 404; The substrate 401 arranged below silicon wafer 402.
Substrate 401 is electrically connected by soldered ball 406 with fingerprint Identification sensor 403, again because fingerprint Identification sensor 403 is electrically connected with silicon wafer 402, then illustrate that substrate 401 can be electrically connected with silicon wafer 402 by soldered ball 406 and fingerprint Identification sensor 403, namely in the present embodiment, silicon wafer 402 is not directly electrically connected with substrate 401, but can be connected with silicon wafer 402 Indirect Electro with fingerprint Identification sensor 403 by soldered ball 406.The main material of the soldered ball 406 of the present embodiment comprises main material and comprises tin, lead, silver, copper etc.
This substrate 401 can be flexible circuit board (Flexible Printed Circuit is called for short FPC) or printed circuit board (Printed Circuit Board is called for short PCB), or FPC and PCB arranged from below to up.Particularly, this PCB and FPC can be connected by tin cream.
Alternatively, the length of this silicon wafer 402 is less than the length of fingerprint Identification sensor 403.Because the length of silicon wafer 402 is less, then save the cost of silicon wafer 402.
Alternatively, the silicon wafer 402 of the present embodiment is provided with wire, and silicon wafer 402 is electrically connected with fingerprint Identification sensor 403 by this wire, and this wire can be specifically scolding tin.In addition, be also provided with bonding agent between silicon wafer 402 and fingerprint Identification sensor 403, this bonding agent is used for silicon bonded wafer 402 and fingerprint Identification sensor 403, and plays the effect of filling.This bonding agent can be specifically epoxy resin (Epoxy), and this bonding agent effectively can improve the physical strength (not shown) of wire.
Alternatively; epoxy-plastic packaging material (EpoxyMolding Compound is also filled with between silicon wafer 402 and substrate 401; be called for short EMC) layer 407; this EMC layer 407 not only plays filling effect; the difference of the thermal expansivity between silicon wafer 402 and substrate 401 can also be compensated; prevent moisture damage, and silicon wafer 402 can be protected.
Fig. 5 is the diagrammatic cross-section three of the utility model fingerprint Identification sensor encapsulating structure.Fig. 5 embodiment realizes on the basis of Fig. 4 embodiment.Particularly, the present embodiment is on the basis of Fig. 4 embodiment, and the encapsulating structure of fingerprint Identification sensor also comprises housing (Bezel) 408, and this housing 408 is arranged on the both sides of silicon wafer 402 and fingerprint Identification sensor 403, particularly, the bottom of this housing 408 can contact substrate 401.This housing 408 not only can play decoration and protective effect, and the sense of touch of user can also be made better.The material of this housing 408 can be metal material, also can be plastics.
This housing 408 can have various deformation, the height of housing 408 is identical with the height of hard mask layer 405, all right, the height of housing 408 is higher than the upper surface (not shown) of hard mask layer 405, in addition, this housing 408 can also be oblique form as shown in Figure 6, namely housing 408 tilt while with the upper surface of hard mask layer 405 in obtuse angle, and housing 408 does not contact the upper surface of hard mask layer 405, or as shown in Figure 7, that housing 408 tilts while with the upper surface of hard mask layer 405 in obtuse angle, and housing 408 tilt while contact with the upper surface of hard mask layer 405.
For Fig. 4 to Fig. 7, its side's of preparation process is specially: first fingerprint Identification sensor 403 and silicon wafer 402 are electrically connected, and then by soldered ball 406, silicon wafer 402 is connected with substrate 401, then mould is set on substrate 401, this mould surrounds fingerprint Identification sensor 403, pours into EMC, be positioned on substrate 401 to be formed in this mould, parcel fingerprint Identification sensor 403 and do not cover the packed layer of fingerprint Identification sensor 403 upper surface, removes mould afterwards.Then on the surface of current structure, color rete 404 and hard mask layer 405 is prepared successively, finally again at the module edge of entirety cover upper side frame 408 (Bezel).
Encapsulating structure shown in Fig. 4 to Fig. 7, encapsulation process is comparatively complicated.In specific implementation process, the form of overall package can also be adopted, namely first fingerprint Identification sensor and silicon wafer are electrically connected, and then by soldered ball, silicon wafer is connected with substrate, color rete and hard mask layer are set above fingerprint Identification sensor again, finally carry out injection molding packaging, the encapsulating structure obtained specifically can be as shown in Figs. 8 to 11.
Fig. 8 is the diagrammatic cross-section six of the utility model fingerprint Identification sensor encapsulating structure.As shown in Figure 8, the fingerprint Identification sensor encapsulating structure that the present embodiment provides comprises: above silicon wafer 402 arrange and the fingerprint Identification sensor 403 be electrically connected with this silicon wafer; The color rete 404 arranged above fingerprint Identification sensor 403; The hard mask layer 405 arranged above color rete 404; The substrate 401 arranged below silicon wafer 402.It will be understood by those skilled in the art that above-mentioned encapsulating structure is overall package.Then housing 408 is set in the both sides of silicon wafer 402 and fingerprint Identification sensor 403.The present embodiment is when arranging housing 408, and be semiclosed pattern, namely housing 408 is not overlapped on hard mask layer 405.Now the structure that forms of housing 408 and substrate 401, is equivalent to mould.Now, when injection molding packaging, by the opening do not overlapped, in this mould, pour into EMC, be positioned on substrate 401 to be formed, parcel fingerprint Identification sensor 403, color rete 404, hard mask layer 405 and do not cover the packed layer of hard mask layer 405 upper surface.
In the present embodiment, substrate 401 is electrically connected by soldered ball 406 with fingerprint Identification sensor 403, again because fingerprint Identification sensor 403 is electrically connected with silicon wafer 402, then illustrate that substrate 401 can be electrically connected with silicon wafer 402 by soldered ball 406 and fingerprint Identification sensor 403, namely in the present embodiment, silicon wafer 402 is not directly electrically connected with substrate 401, but can be connected with silicon wafer 402 Indirect Electro with fingerprint Identification sensor 403 by soldered ball 406.The main material of the soldered ball 406 of the present embodiment comprises main material and comprises tin, lead, silver, copper etc.
This substrate 401 can be flexible circuit board (Flexible Printed Circuit is called for short FPC) or printed circuit board (Printed Circuit Board is called for short PCB), or FPC and PCB arranged from below to up.Particularly, this PCB and FPC can be connected by tin cream.
Alternatively, the length of this silicon wafer 402 is less than the length of fingerprint Identification sensor 403.Because the length of silicon wafer 402 is less, then save the cost of silicon wafer 402.
Alternatively, the silicon wafer 402 of the present embodiment is provided with wire, and silicon wafer 402 is electrically connected with fingerprint Identification sensor 403 by this wire, and this wire can be specifically scolding tin.In addition, be also provided with bonding agent between silicon wafer 402 and fingerprint Identification sensor 403, this bonding agent is used for silicon bonded wafer 402 and fingerprint Identification sensor 403, and plays the effect of filling.This bonding agent can be specifically epoxy resin (Epoxy), and this bonding agent effectively can improve the physical strength (not shown) of wire.
Fig. 9 is the diagrammatic cross-section seven of the utility model fingerprint Identification sensor encapsulating structure.Overall package structure and Fig. 8 embodiment of the present embodiment are similar, and the present embodiment repeats no more herein.The difference of the present embodiment and Fig. 8 embodiment is, the present embodiment, when arranging housing 408, is enclosed construction.Housing 408 is just overlapped on hard mask layer 405, and the sidewall of housing 408 possesses fill orifice 409, pours into EMC, thus realize last encapsulation by fill orifice 409 in the mould formed to housing 408 and substrate 401.
Figure 10 is the diagrammatic cross-section eight of the utility model fingerprint Identification sensor encapsulating structure.Overall package structure and Fig. 8 embodiment of the present embodiment are similar, and the present embodiment repeats no more herein.The difference of the present embodiment and Fig. 8 embodiment is, the present embodiment, when arranging housing 408, is enclosed construction.Housing 408 part is overlapped on hard mask layer 405, and the sidewall of housing 408 possesses fill orifice 409, pours into EMC, thus realize last encapsulation by fill orifice 409 in the mould formed to housing 408 and substrate 401.
Figure 11 is the diagrammatic cross-section nine of the utility model fingerprint Identification sensor encapsulating structure.Overall package structure and Fig. 8 embodiment of the present embodiment are similar, and the present embodiment repeats no more herein.The difference of the present embodiment and Fig. 8 embodiment is, the present embodiment, when arranging housing 408, is enclosed construction.Housing 408 is just overlapped on hard mask layer 405, and the sidewall of housing 408 possesses fill orifice 409, pour into EMC in the mould formed to housing 408 and substrate 401 by fill orifice 409, and outside mould, realize packed layer 410, thus realize last encapsulation.
The fingerprint Identification sensor encapsulating structure that the present embodiment provides, frame can be utilized to carry out the perfusion of capsulation material, form packed layer, packed layer can be formed without the need to arranging mould, and it is follow-up also without the need to removing mould, effectively simplify preparation technology's flow process of fingerprint recognition module, improve preparation efficiency.Further, the teat of described frame can fix the structure of described packed layer and enclosed inside thereof more effectively, improves device reliability.
Figure 12 is the schematic flow sheet of the utility model fingerprint Identification sensor method for packing embodiment one.As shown in figure 12, the method that the present embodiment provides comprises:
Step 1201, above silicon wafer, arrange fingerprint Identification sensor, fingerprint Identification sensor is electrically connected with silicon wafer;
Step 1202, color rete is set above fingerprint Identification sensor;
Step 1203, hard mask layer is set above color rete, in hard mask layer and color rete, has at least one deck to adulterate high dielectric grain;
Step 1204, silicon wafer to be arranged on substrate.
In step 1201, the side of circuit is not had by the mode of wire bonding and upside-down mounting silicon wafer at silicon wafer, by silicon wafer upside-down mounting on the fingerprint Identification sensor made, namely above silicon wafer, arrange fingerprint Identification sensor, silicon wafer is connected by wire with fingerprint Identification sensor.Further, also can between silicon wafer and fingerprint Identification sensor filling adhesive, silicon wafer can be firmly connected with fingerprint Identification sensor.
In step 1202, above fingerprint Identification sensor, spraying or silk-screen color rete, it will be understood by those skilled in the art that the difference according to color Film color, and spraying or silk-screen mode are also slightly different.
When color rete is dark, can direct color rete above fingerprint Identification sensor, then carry out heat curing or photocuring, after the solidification is complete, if the effect of color rete is inadequate, the technique of brushing and solidifying can be proceeded, until the color effects of color rete reaches requirement.
When color rete is light color, can be coated with dark rete as background color above fingerprint Identification sensor now, after dark rete solidifies, then be coated with light rete.
In step 1203, above color rete, spray hard mask layer, be then shaped by photocuring or ultraviolet light polymerization.
In step 1204, silicon wafer is arranged on substrate.
The method for packing that the present embodiment provides, by arranging fingerprint Identification sensor above silicon wafer, fingerprint Identification sensor is electrically connected with silicon wafer; Color rete is set above fingerprint Identification sensor; Hard mask layer is set above color rete, in hard mask layer and color rete, has at least one deck to adulterate high dielectric grain; Silicon wafer is arranged on substrate, the fingerprint Identification sensor encapsulating structure prepared, not only make fingerprint Identification sensor more obvious to the sensing of electric capacity, the recognition accuracy of fingerprint Identification sensor can be improved, the decipherment distance of fingerprint Identification sensor can also be increased.
Last it is noted that above each embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to foregoing embodiments, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of each embodiment technical scheme of the utility model.
Claims (6)
1. a fingerprint Identification sensor encapsulating structure, is characterized in that, comprising:
On silicon side arrange and the fingerprint Identification sensor be electrically connected with described silicon wafer;
The color rete arranged above described fingerprint Identification sensor;
The hard mask layer arranged above described color rete;
The substrate arranged below described silicon wafer;
Wherein, the thickness of described hard mask layer and the thickness sum of described color rete are less than or equal to 100 μm.
2. fingerprint Identification sensor encapsulating structure according to claim 1, is characterized in that, the thickness of described hard mask layer is more than or equal to 10 μm and is less than or equal to 50 μm.
3. fingerprint Identification sensor encapsulating structure according to claim 1, is characterized in that, the thickness of described color rete is more than or equal to 5 μm and is less than or equal to 50 μm.
4. fingerprint Identification sensor encapsulating structure according to claim 1, is characterized in that, the thickness of described hard mask layer and the thickness sum of described color rete are less than or equal to 50 μm.
5. fingerprint Identification sensor encapsulating structure according to claim 4, is characterized in that, the thickness of described hard mask layer is for being more than or equal to 10 μm and being less than or equal to 30 μm.
6. fingerprint Identification sensor encapsulating structure according to claim 4, is characterized in that, the thickness of described color rete is more than or equal to 10 μm and is less than or equal to 30 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420484025.9U CN204406424U (en) | 2014-08-26 | 2014-08-26 | Fingerprint Identification sensor encapsulating structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420484025.9U CN204406424U (en) | 2014-08-26 | 2014-08-26 | Fingerprint Identification sensor encapsulating structure |
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| CN204406424U true CN204406424U (en) | 2015-06-17 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105005762A (en) * | 2015-06-24 | 2015-10-28 | 金龙机电（东莞）有限公司 | Fingerprint module group manufacturing method and fingerprint module group |
| TWI547884B (en) * | 2015-07-09 | 2016-09-01 | 金佶科技股份有限公司 | Fingerprint identification module |
| US10002281B2 (en) | 2015-07-09 | 2018-06-19 | Gingy Technology Inc. | Fingerprint identification module |
| CN109670372A (en) * | 2017-10-13 | 2019-04-23 | 南昌欧菲生物识别技术有限公司 | Fingerprint mould group |
| US10489631B2 (en) | 2015-07-09 | 2019-11-26 | Gingy Technology Inc. | Biometric identification module |
| CN112883872A (en) * | 2021-02-22 | 2021-06-01 | 业泓科技(成都)有限公司 | Identify sensing structure, fingerprint identification module and terminal |
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2014
- 2014-08-26 CN CN201420484025.9U patent/CN204406424U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105005762A (en) * | 2015-06-24 | 2015-10-28 | 金龙机电（东莞）有限公司 | Fingerprint module group manufacturing method and fingerprint module group |
| CN105005762B (en) * | 2015-06-24 | 2018-10-12 | 广东金龙机电有限公司 | A kind of fingerprint module making method and fingerprint module |
| TWI547884B (en) * | 2015-07-09 | 2016-09-01 | 金佶科技股份有限公司 | Fingerprint identification module |
| CN106339662A (en) * | 2015-07-09 | 2017-01-18 | 金佶科技股份有限公司 | Fingerprint identification module |
| US9754150B2 (en) | 2015-07-09 | 2017-09-05 | Gingy Technology Inc. | Fingerprint identification module |
| US10002281B2 (en) | 2015-07-09 | 2018-06-19 | Gingy Technology Inc. | Fingerprint identification module |
| US10489631B2 (en) | 2015-07-09 | 2019-11-26 | Gingy Technology Inc. | Biometric identification module |
| CN106339662B (en) * | 2015-07-09 | 2020-11-06 | 金佶科技股份有限公司 | Fingerprint identification module |
| CN109670372A (en) * | 2017-10-13 | 2019-04-23 | 南昌欧菲生物识别技术有限公司 | Fingerprint mould group |
| CN112883872A (en) * | 2021-02-22 | 2021-06-01 | 业泓科技(成都)有限公司 | Identify sensing structure, fingerprint identification module and terminal |
| CN112883872B (en) * | 2021-02-22 | 2023-11-07 | 业泓科技(成都)有限公司 | Identification sensing structure, fingerprint identification module and terminal |
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Granted publication date: 20150617 Termination date: 20200826 |