CN104170256B - 驱动半桥连接的半导体功率开关的方法和驱动电路 - Google Patents
驱动半桥连接的半导体功率开关的方法和驱动电路 Download PDFInfo
- Publication number
- CN104170256B CN104170256B CN201380014852.XA CN201380014852A CN104170256B CN 104170256 B CN104170256 B CN 104170256B CN 201380014852 A CN201380014852 A CN 201380014852A CN 104170256 B CN104170256 B CN 104170256B
- Authority
- CN
- China
- Prior art keywords
- circuit
- signal
- trigger
- power switch
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
- H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
- H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
- H03K4/625—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
- H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
- H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
- H03K4/64—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device combined with means for generating the driving pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/90—Linearisation of ramp; Synchronisation of pulses
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/351,618 US8829949B2 (en) | 2012-01-17 | 2012-01-17 | Method and apparatus for driving a voltage controlled power switch device |
| US13/351,618 | 2012-01-17 | ||
| EP12151561.3 | 2012-01-18 | ||
| EP12151561.3A EP2618486B1 (en) | 2012-01-17 | 2012-01-18 | A method and apparatus for driving a voltage controlled power switch device |
| PCT/EP2013/050869 WO2013107832A2 (en) | 2012-01-17 | 2013-01-17 | A method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104170256A CN104170256A (zh) | 2014-11-26 |
| CN104170256B true CN104170256B (zh) | 2018-02-23 |
Family
ID=45606961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380014852.XA Expired - Fee Related CN104170256B (zh) | 2012-01-17 | 2013-01-17 | 驱动半桥连接的半导体功率开关的方法和驱动电路 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8829949B2 (enExample) |
| EP (2) | EP2618486B1 (enExample) |
| JP (1) | JP6431768B2 (enExample) |
| CN (1) | CN104170256B (enExample) |
| WO (1) | WO2013107832A2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9018985B2 (en) * | 2010-08-04 | 2015-04-28 | Rohm Co., Ltd. | Power module and output circuit |
| DE102011121775B3 (de) | 2011-12-21 | 2013-01-31 | Brose Fahrzeugteile Gmbh & Co. Kg, Hallstadt | Steuersystem |
| US8829949B2 (en) | 2012-01-17 | 2014-09-09 | Franc Zajc | Method and apparatus for driving a voltage controlled power switch device |
| CN104716815B (zh) * | 2013-12-16 | 2018-09-04 | 台达电子企业管理(上海)有限公司 | 功率电路及电源系统 |
| US10637461B2 (en) * | 2014-03-14 | 2020-04-28 | General Elelctric Company | Gate drive devices and switching systems |
| US20150264789A1 (en) * | 2014-03-14 | 2015-09-17 | General Electric Company | Methods and systems for controlling voltage switching |
| US9473142B2 (en) * | 2014-12-12 | 2016-10-18 | Mediatek Inc. | Method for performing signal driving control in an electronic device with aid of driving control signals, and associated apparatus |
| CN104677392B (zh) * | 2015-02-12 | 2017-11-07 | 深圳怡化电脑股份有限公司 | 一种传感器信号处理电路 |
| WO2016195478A1 (en) * | 2015-06-05 | 2016-12-08 | Boerman Barend Johannis | Resonance control terminal driven electric power transfer device |
| US9842077B2 (en) * | 2015-06-09 | 2017-12-12 | Hong Fu Jin Precision Industry (Shezhen) Co., Ltd. | Control server system with a switch and comparing circuit for controlling a trigger time for buffer and power signal based on current status |
| DE102015112589A1 (de) | 2015-07-31 | 2017-02-02 | Brose Fahrzeugteile Gmbh & Co. Kommanditgesellschaft, Bamberg | Steuersystem für eine motorisch verstellbare Laderaumvorrichtung eines Kraftfahrzeugs |
| US9812962B2 (en) * | 2015-09-30 | 2017-11-07 | Intersil Americas LLC | Method and system for increasing efficiency and controlling slew rate in DC-DC converters |
| DE102015221636A1 (de) * | 2015-11-04 | 2017-05-04 | Robert Bosch Gmbh | Verfahren zum Betreiben eines Metall-Oxid-Halbleiter-Feldeffekttransistors |
| US9660637B1 (en) | 2015-12-22 | 2017-05-23 | Delta Electronics, Inc. | Driving circuit and driving method |
| US9673809B1 (en) * | 2016-03-24 | 2017-06-06 | Nxp Usa, Inc. | Replication of a drive signal across a galvanic isolation barrier |
| US9966837B1 (en) | 2016-07-08 | 2018-05-08 | Vpt, Inc. | Power converter with circuits for providing gate driving |
| FR3056859B1 (fr) * | 2016-09-23 | 2018-11-30 | Alstom Transport Technologies | Procede de pilotage d'un transistor du type igbt et dispositif de pilotage associe |
| US10256811B2 (en) * | 2016-11-22 | 2019-04-09 | Electronics And Telecommunications Research Institute | Cascode switch circuit including level shifter |
| DE102017218305A1 (de) * | 2017-10-13 | 2019-04-18 | Conti Temic Microelectronic Gmbh | Verfahren zum Steuern einer Halbleiterbrücke eines elektrisch betreibbaren Motors mittels eines Rampensignals, Steuerungseinrichtung sowie Anordnung |
| JP6993168B2 (ja) * | 2017-10-18 | 2022-01-13 | 株式会社ジャパンディスプレイ | 表示装置、および、タッチパネル装置 |
| RU2666643C1 (ru) * | 2017-11-15 | 2018-09-11 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Унифицированный радиационно-стойкий модуль коммутатора нагрузок исполнительных каскадов приборов автоматики |
| JP7395256B2 (ja) * | 2019-03-14 | 2023-12-11 | 株式会社東芝 | 増幅装置および送信装置 |
| CN109921670B (zh) * | 2019-03-28 | 2021-01-19 | 苏州汇川联合动力系统有限公司 | 逆变器控制方法、逆变器及可读存储介质 |
| CN110868062B (zh) * | 2019-10-18 | 2020-11-27 | 珠海格力电器股份有限公司 | 一种半桥驱动电路及其控制方法 |
| CN112994447B (zh) * | 2019-12-13 | 2022-03-04 | 立锜科技股份有限公司 | 低延迟时间的电源转换电路及其中的驱动电路 |
| US12301122B2 (en) | 2020-04-17 | 2025-05-13 | Murata Manufacturing Co., Ltd. | Isolated gate driver |
| CN112014708B (zh) * | 2020-07-27 | 2023-02-07 | 西安中车永电电气有限公司 | 基于FPGA的SiC功率器件在线结温计算方法 |
| US11374440B2 (en) * | 2020-07-31 | 2022-06-28 | Renesas Electronics America Inc. | Wireless power charging |
| CN116264461A (zh) * | 2021-12-14 | 2023-06-16 | 德斯拜思有限公司 | 用于电流分配的电子电路装置 |
| JP2023121963A (ja) * | 2022-02-22 | 2023-09-01 | Necネットワーク・センサ株式会社 | 半導体スイッチング素子の駆動回路 |
| CN114531013A (zh) * | 2022-03-14 | 2022-05-24 | 飞锃半导体(上海)有限公司 | 一种为SiC MOSFET驱动电路供电的电源 |
| CN117240238A (zh) * | 2022-06-08 | 2023-12-15 | 哈曼国际工业有限公司 | 音频放大器 |
| TWI808881B (zh) * | 2022-09-02 | 2023-07-11 | 財團法人工業技術研究院 | 高功率多頻耦合驅動器及其驅動方法 |
| EP4369603B1 (en) | 2022-11-10 | 2025-11-26 | Mitsubishi Electric R&D Centre Europe Bv | Dead-time reduction using gate current mirror in a power converter |
| KR20250070410A (ko) * | 2023-11-13 | 2025-05-20 | 한국전기연구원 | 펄스성형장치 및 이를 이용한 펄스성형방법 |
| CN118589814A (zh) * | 2024-05-31 | 2024-09-03 | 昂宝电子(上海)有限公司 | 多路输出开关电源及其控制电路 |
| CN120262875B (zh) * | 2025-06-05 | 2025-09-02 | 深蓝汽车科技有限公司 | 驱动电路、电机控制器的控制方法、装置及车辆 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0760552A1 (en) * | 1995-08-31 | 1997-03-05 | STMicroelectronics S.r.l. | Method and circuit for PWM mode driving a bridge and disk guide using the same |
| US20070146020A1 (en) * | 2005-11-29 | 2007-06-28 | Advanced Analogic Technologies, Inc | High Frequency Power MESFET Gate Drive Circuits |
| US20090278621A1 (en) * | 2008-05-07 | 2009-11-12 | Microchip Technology Incorporated | Pulse Width Modulation Dead Time Compensation Method and Apparatus |
| US20100315842A1 (en) * | 2009-06-15 | 2010-12-16 | Sanken Electric Co., Ltd. | Drive circuit for semiconductor switching element |
| WO2011119102A1 (en) * | 2010-03-22 | 2011-09-29 | Sajith Yasanga Goonesekera | High frequency switch mode power supply capable of gate charge recovery |
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| JPH03286619A (ja) | 1990-04-02 | 1991-12-17 | Mitsubishi Electric Corp | 絶縁ゲート形半導体装置のゲート駆動回路および該回路を用いたフラッシュ制御装置 |
| CN1087884C (zh) * | 1995-02-15 | 2002-07-17 | 陈亚宁 | 绝缘栅器件驱动器 |
| JPH11502391A (ja) * | 1996-11-04 | 1999-02-23 | フィリップス、エレクトロニクス、ネムローゼ、フェンノートシャップ | 回路装置 |
| DE10061563B4 (de) | 2000-12-06 | 2005-12-08 | RUBITEC Gesellschaft für Innovation und Technologie der Ruhr-Universität Bochum mbH | Verfahren und Vorrichtung zum Ein- und Ausschalten von Leistungshalbleitern, insbesondere für ein drehzahlvariables Betreiben einer Asynchronmaschine, ein Betreiben einer Zündschaltung für Ottomotoren, sowie Schaltnetzteil |
| JP3611800B2 (ja) * | 2001-04-09 | 2005-01-19 | 株式会社小糸製作所 | インバータ装置 |
| US6859087B2 (en) | 2002-10-31 | 2005-02-22 | International Rectifier Corporation | Half-bridge high voltage gate driver providing protection of a transistor |
| GB0227792D0 (en) * | 2002-11-29 | 2003-01-08 | Koninkl Philips Electronics Nv | Driver for switching circuit and drive method |
| JP2004194450A (ja) * | 2002-12-12 | 2004-07-08 | Fuji Electric Fa Components & Systems Co Ltd | 電圧駆動型素子の駆動装置 |
| JP4763606B2 (ja) * | 2003-09-08 | 2011-08-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体スイッチの高周波制御 |
| US7215189B2 (en) * | 2003-11-12 | 2007-05-08 | International Rectifier Corporation | Bootstrap diode emulator with dynamic back-gate biasing |
| US7598792B2 (en) | 2005-01-31 | 2009-10-06 | Queen's University At Kingston | Resonant gate drive circuits |
| JP3915815B2 (ja) * | 2005-03-23 | 2007-05-16 | サンケン電気株式会社 | レベルシフト回路および電源装置 |
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| CN1838536B (zh) * | 2006-04-17 | 2010-05-12 | 山东新风光电子科技发展有限公司 | 一种功率开关的驱动装置 |
| JP2008042633A (ja) | 2006-08-08 | 2008-02-21 | Toyota Motor Corp | 電圧制御型スイッチング素子の共振ゲート駆動回路 |
| CN201118535Y (zh) * | 2007-09-28 | 2008-09-17 | 吉林大学中日联谊医院 | 一种半桥mos栅极晶体管驱动电路 |
| US20100109750A1 (en) | 2008-10-30 | 2010-05-06 | Jens Barrenscheen | Boost Mechanism Using Driver Current Adjustment for Switching Phase Improvement |
| US8054110B2 (en) | 2009-01-20 | 2011-11-08 | University Of South Carolina | Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs) |
| US8829949B2 (en) | 2012-01-17 | 2014-09-09 | Franc Zajc | Method and apparatus for driving a voltage controlled power switch device |
-
2012
- 2012-01-17 US US13/351,618 patent/US8829949B2/en not_active Expired - Fee Related
- 2012-01-18 EP EP12151561.3A patent/EP2618486B1/en not_active Not-in-force
-
2013
- 2013-01-17 US US14/372,720 patent/US9496857B2/en active Active
- 2013-01-17 WO PCT/EP2013/050869 patent/WO2013107832A2/en not_active Ceased
- 2013-01-17 EP EP13700344.8A patent/EP2805418B1/en active Active
- 2013-01-17 JP JP2014552625A patent/JP6431768B2/ja active Active
- 2013-01-17 CN CN201380014852.XA patent/CN104170256B/zh not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0760552A1 (en) * | 1995-08-31 | 1997-03-05 | STMicroelectronics S.r.l. | Method and circuit for PWM mode driving a bridge and disk guide using the same |
| US20070146020A1 (en) * | 2005-11-29 | 2007-06-28 | Advanced Analogic Technologies, Inc | High Frequency Power MESFET Gate Drive Circuits |
| US20090278621A1 (en) * | 2008-05-07 | 2009-11-12 | Microchip Technology Incorporated | Pulse Width Modulation Dead Time Compensation Method and Apparatus |
| US20100315842A1 (en) * | 2009-06-15 | 2010-12-16 | Sanken Electric Co., Ltd. | Drive circuit for semiconductor switching element |
| WO2011119102A1 (en) * | 2010-03-22 | 2011-09-29 | Sajith Yasanga Goonesekera | High frequency switch mode power supply capable of gate charge recovery |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2805418A2 (en) | 2014-11-26 |
| JP6431768B2 (ja) | 2018-11-28 |
| EP2805418B1 (en) | 2018-09-12 |
| WO2013107832A2 (en) | 2013-07-25 |
| EP2618486B1 (en) | 2017-01-11 |
| US8829949B2 (en) | 2014-09-09 |
| CN104170256A (zh) | 2014-11-26 |
| US9496857B2 (en) | 2016-11-15 |
| EP2618486A3 (en) | 2013-12-04 |
| WO2013107832A3 (en) | 2013-12-19 |
| JP2015509333A (ja) | 2015-03-26 |
| EP2618486A2 (en) | 2013-07-24 |
| US20150109033A1 (en) | 2015-04-23 |
| US20130181748A1 (en) | 2013-07-18 |
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