CN104134931A - 波导、包括该波导的装置及制造该波导的方法 - Google Patents
波导、包括该波导的装置及制造该波导的方法 Download PDFInfo
- Publication number
- CN104134931A CN104134931A CN201410393773.0A CN201410393773A CN104134931A CN 104134931 A CN104134931 A CN 104134931A CN 201410393773 A CN201410393773 A CN 201410393773A CN 104134931 A CN104134931 A CN 104134931A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- layer
- semiconductor portions
- sept
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 136
- 239000010410 layer Substances 0.000 claims abstract description 105
- 239000004020 conductor Substances 0.000 claims abstract description 39
- 239000012792 core layer Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 17
- 230000010355 oscillation Effects 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 9
- 230000006872 improvement Effects 0.000 abstract description 6
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 239000011295 pitch Substances 0.000 description 22
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 230000005641 tunneling Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the Periodic Table than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
- H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
- Waveguides (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-110887 | 2011-05-17 | ||
| JP2011110887 | 2011-05-17 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210148448.9A Division CN102790355B (zh) | 2011-05-17 | 2012-05-14 | 波导、包括该波导的装置及制造该波导的方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104134931A true CN104134931A (zh) | 2014-11-05 |
Family
ID=46146541
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410393773.0A Pending CN104134931A (zh) | 2011-05-17 | 2012-05-14 | 波导、包括该波导的装置及制造该波导的方法 |
| CN201210148448.9A Expired - Fee Related CN102790355B (zh) | 2011-05-17 | 2012-05-14 | 波导、包括该波导的装置及制造该波导的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210148448.9A Expired - Fee Related CN102790355B (zh) | 2011-05-17 | 2012-05-14 | 波导、包括该波导的装置及制造该波导的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8805147B2 (https=) |
| EP (2) | EP2624380A3 (https=) |
| JP (1) | JP2012256867A (https=) |
| CN (2) | CN104134931A (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108701964A (zh) * | 2016-03-15 | 2018-10-23 | 株式会社东芝 | 半导体激光器装置 |
| CN109313726A (zh) * | 2015-12-30 | 2019-02-05 | 谷歌有限责任公司 | 使用电介质减薄来减少量子设备中的表面损耗和杂散耦合 |
| CN110036535A (zh) * | 2016-10-18 | 2019-07-19 | At&T知识产权一部有限合伙公司 | 用于经由电路发射导波的装置和方法 |
| CN111223844A (zh) * | 2017-05-24 | 2020-06-02 | 日月光半导体制造股份有限公司 | 半导体封装装置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9008983B2 (en) | 2011-05-17 | 2015-04-14 | Canon Kabushiki Kaisha | Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide |
| WO2014000046A1 (en) * | 2012-06-29 | 2014-01-03 | Hill Martin Terence | Metal-insulator-metal waveguide for nano-lasers and optical amplifiers |
| DE102016106757B4 (de) | 2015-04-15 | 2018-04-05 | Tobias Fobbe | Metall-Metall-Wellenleiter für eine Strahlung im THz-Bereich sowie Quantenkaskadenlaser mit einem solchen Wellenleiter |
| JP6719882B2 (ja) * | 2015-10-20 | 2020-07-08 | キヤノン株式会社 | 発振素子及びそれを用いた測定装置 |
| JP6581024B2 (ja) * | 2016-03-15 | 2019-09-25 | 株式会社東芝 | 分布帰還型半導体レーザ |
| CN109979996B (zh) * | 2019-03-27 | 2022-03-18 | 南京大学 | 一种半金属/半导体肖特基结及其制备方法和肖特基二极管 |
| CN113009620A (zh) * | 2019-12-18 | 2021-06-22 | 北京交通大学 | 一种基于石墨烯的混杂等离子波导 |
| US20220209498A1 (en) * | 2020-12-30 | 2022-06-30 | Transwave Photonics, Llc. | Quantum cascade laser devices with improved heat extraction |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6301282B1 (en) * | 1998-07-29 | 2001-10-09 | Lucent Technologies Inc. | Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons |
| CN1322042A (zh) * | 2000-02-24 | 2001-11-14 | 朗迅科技公司 | 分布式反馈表面等离子体振子激光器 |
| WO2002056385A2 (en) * | 2000-12-21 | 2002-07-18 | Raytheon Company | Optically powered resonant tunneling device |
| CN101083383A (zh) * | 2006-05-31 | 2007-12-05 | 佳能株式会社 | 激光器装置 |
| CN101682162A (zh) * | 2007-08-31 | 2010-03-24 | 佳能株式会社 | 激光器器件 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021186A1 (fr) * | 2001-08-29 | 2003-03-13 | Hitachi, Ltd. | Procede pour mesurer les dimensions d'un echantillon et microscope electronique a balayage |
| JP2007017419A (ja) * | 2005-07-07 | 2007-01-25 | Semiconductor Res Found | ダイオード発振素子を用いた建材および建造物のイメージング方法およびイメージングシステム |
| GB0614833D0 (en) | 2006-07-26 | 2006-09-06 | Univ Leeds | Semiconductor laser |
| US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
| JP2010074255A (ja) * | 2008-09-16 | 2010-04-02 | Panasonic Corp | 高周波フィルタ装置 |
| US20120207186A1 (en) | 2009-02-16 | 2012-08-16 | The Board Of Regents Of The University Of Texas System | Terahertz quantum cascade lasers (qcls) |
| US8532152B2 (en) | 2009-11-03 | 2013-09-10 | Massachusetts Institute Of Technology | Frequency tunable wire lasers |
| US9008983B2 (en) | 2011-05-17 | 2015-04-14 | Canon Kabushiki Kaisha | Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide |
| JP6034616B2 (ja) | 2011-09-09 | 2016-11-30 | キヤノン株式会社 | 導波路及びその製造方法、ならびに電磁波分析装置 |
-
2012
- 2012-05-01 US US13/461,297 patent/US8805147B2/en not_active Expired - Fee Related
- 2012-05-04 EP EP13001586.0A patent/EP2624380A3/en not_active Withdrawn
- 2012-05-04 EP EP12003433A patent/EP2528171A1/en not_active Withdrawn
- 2012-05-08 JP JP2012106528A patent/JP2012256867A/ja active Pending
- 2012-05-14 CN CN201410393773.0A patent/CN104134931A/zh active Pending
- 2012-05-14 CN CN201210148448.9A patent/CN102790355B/zh not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6301282B1 (en) * | 1998-07-29 | 2001-10-09 | Lucent Technologies Inc. | Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons |
| CN1322042A (zh) * | 2000-02-24 | 2001-11-14 | 朗迅科技公司 | 分布式反馈表面等离子体振子激光器 |
| WO2002056385A2 (en) * | 2000-12-21 | 2002-07-18 | Raytheon Company | Optically powered resonant tunneling device |
| CN101083383A (zh) * | 2006-05-31 | 2007-12-05 | 佳能株式会社 | 激光器装置 |
| CN101682162A (zh) * | 2007-08-31 | 2010-03-24 | 佳能株式会社 | 激光器器件 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109313726A (zh) * | 2015-12-30 | 2019-02-05 | 谷歌有限责任公司 | 使用电介质减薄来减少量子设备中的表面损耗和杂散耦合 |
| CN109313726B (zh) * | 2015-12-30 | 2023-07-11 | 谷歌有限责任公司 | 使用电介质减薄来减少量子设备中的表面损耗和杂散耦合 |
| CN108701964A (zh) * | 2016-03-15 | 2018-10-23 | 株式会社东芝 | 半导体激光器装置 |
| CN110036535A (zh) * | 2016-10-18 | 2019-07-19 | At&T知识产权一部有限合伙公司 | 用于经由电路发射导波的装置和方法 |
| US11205853B2 (en) | 2016-10-18 | 2021-12-21 | At&T Intellectual Property I, L.P. | Apparatus and methods for launching guided waves via circuits |
| CN111223844A (zh) * | 2017-05-24 | 2020-06-02 | 日月光半导体制造股份有限公司 | 半导体封装装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102790355B (zh) | 2015-04-01 |
| EP2528171A1 (en) | 2012-11-28 |
| US8805147B2 (en) | 2014-08-12 |
| EP2624380A2 (en) | 2013-08-07 |
| CN102790355A (zh) | 2012-11-21 |
| EP2624380A3 (en) | 2013-09-18 |
| US20120292512A1 (en) | 2012-11-22 |
| JP2012256867A (ja) | 2012-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104134931A (zh) | 波导、包括该波导的装置及制造该波导的方法 | |
| CN102790356B (zh) | 波导、包括波导的装置和波导的制造方法 | |
| US9391428B2 (en) | Waveguide element | |
| US9041415B2 (en) | Waveguide, method of manufacturing the same, and electromagnetic wave analysis apparatus | |
| US8779866B2 (en) | Oscillator | |
| US7889015B2 (en) | Oscillation device | |
| US10447006B2 (en) | Electro-optical device with asymmetric, vertical current injection ohmic contacts | |
| US20150303559A1 (en) | Oscillation device, reception device and sample information acquisition apparatus | |
| US8319565B2 (en) | Resonator tunnel device | |
| JP4871816B2 (ja) | レーザ素子 | |
| EP0514077B1 (en) | Opto-electronic device | |
| CN108988124A (zh) | 一种用于微波振荡源的单片集成隧道结激光器 | |
| JP2008301374A (ja) | 発振器の製造方法、及び発振器 | |
| Alharbi | High performance terahertz resonant tunnelling diode sources and broadband antenna for air-side radiation | |
| Tavallaee | Terahertz quantum-cascade transmission-line metamaterials | |
| US9438168B2 (en) | Oscillator | |
| Wu et al. | On-chip THz-frequency tuneable plasmonic circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141105 |
|
| WD01 | Invention patent application deemed withdrawn after publication |