CN104113302A - Vehicle-mounted crystal oscillator - Google Patents
Vehicle-mounted crystal oscillator Download PDFInfo
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- CN104113302A CN104113302A CN201410341999.6A CN201410341999A CN104113302A CN 104113302 A CN104113302 A CN 104113302A CN 201410341999 A CN201410341999 A CN 201410341999A CN 104113302 A CN104113302 A CN 104113302A
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Abstract
The invention relates to a vehicle-mounted crystal oscillator. The vehicle-mounted crystal oscillator comprises a base and a wafer, a first PAD (programmable analog device), a second PAD and a third PAD. The upper surface of the wafer is provided with a first rectangular coated main electrode, a first coated main electrode leading-out end and a first auxiliary electrode leading-out end; the lower surface of the wafer is provided with a second rectangular coated main electrode, a second coated main electrode leading-out end and a second auxiliary electrode leading-out end. The length of the first rectangular coated main electrode and the second rectangular coated main electrode is 2.2-2.3 mm, and the width of the first rectangular coated main electrode and the second rectangular coated main electrode is 1.6-1.7 mm; the third PAD is fixedly connected with one position on the circumference of the lower surface of the wafer through a conductive primer to form a triangle with the first PAD, the second PAD and the third PAD as the vertexes. By adding a fixing point between the wafer and the base and replacing an existing two-point fixing mode with a three-point fixing mode, the stable performance of the wafer and the base can be improved; the length of the area of the coated main electrode on the wafer is 2.2-2.3 mm, and the width of the area of the coated main electrode on the wafer is 1.6-1.7 mm, so that an optimal coating area provides the crystal oscillator with excellent temperature characteristics and low resistance.
Description
Technical field
The present invention relates to field of electrical components, specifically be a kind of vehicle mounted crystal oscillator.
Background technology
SMD crystal resonator (hereinafter referred to as " crystal oscillator ") in use, most importantly frequency accuracy, while comprising precision under normal temperature and variations in temperature, frequency variation (is called temperature characterisitic, making curve is temperature variant cubic curve, requirement is in curve, there is no saltus step, and General Requirements is in ± 20ppm).In vehicle-mounted, security protection etc. applied, in order to guarantee at working temperature lower frequency in claimed range, the requirement of temperature characterisitic is also added sternly thereupon.Crystal oscillator main performance is determined by quartz wafer wherein, and its temperature characterisitic is to be determined by the self-characteristic of quartz wafer and the size design of coated electrode.In low frequency crystal oscillator, should guarantee to lower resistance value and improve again temperature characterisitic especially.At present, low frequency small size crystal, take SMD5032-8MHz product as example, coated electrode is generally used the electrode of length * wide=2.2mm * 1.2mm (error ± 0.05mm), resistance mean value is bigger than normal, approximately 42.71 Ω, and temperature characterisitic can not meet the demands, generally in ± 30ppm, the requirement of cannot meet ± 20ppm.
And adding man-hour at surface mount type (SMD type) crystal oscillator, and conventionally adopt conducting resinl that wafer is fixed on to pedestal PAD upper, the electrode of wafer is connected with base interior electrode.Conventional SMD crystal oscillator, conventionally adopt the mode of 4 some glue to fix, as shown in Figure 1, pedestal has two PAD at chip electrode exit, on two PAD, put and conduct electricity primer, carry after wafer, then adding conducting resinl face glue, primer and face glue interconnect, and wafer is closely connected with pedestal PAD.Adopt above-mentioned fixed form, aspect vibration resistance, can meet conventional anti-drop, shock resistance.But while being used in vehicle-mounted market, high to the vibration resistance requirement of crystal oscillator, often have the merit of significantly shaking, once wafer departs from pedestal PAD under the environment of vibration, cause crystal oscillator to lose efficacy.Therefore, be necessary to provide a kind of crystal oscillator of high resistance to shock of vehicle mounted, and there is good temperature characterisitic simultaneously.
Summary of the invention
Technical problem to be solved by this invention is: what a kind of vehicle mounted was provided both has a high resistance to shock, has again the crystal oscillator of excellent temperature characteristics.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is:
A vehicle mounted crystal oscillator, comprises pedestal and wafer; Described pedestal is provided with a PAD, the 2nd PAD and the 3rd PAD, and the upper surface of described wafer is provided with rectangle the first filming main electrode, the first filming main electrode exit and the first auxiliary electrode exit; The lower surface of described wafer is provided with rectangle second plated film main electrode, second plated film main electrode exit and the second auxiliary electrode exit corresponding with described rectangle the first filming main electrode, the first filming main electrode exit and the first auxiliary electrode exit;
Described the first filming main electrode exit, the second plated film main electrode exit, the first auxiliary electrode exit and the second auxiliary electrode exit are positioned at the periphery of described wafer, described the first filming main electrode exit is connected with described rectangle the first filming main electrode exit, and described the second plated film main electrode exit is connected with described rectangle the second plated film main electrode exit;
The length of described rectangle the first filming main electrode and rectangle the second plated film main electrode is 2.2-2.3mm, and width is 1.6-1.7mm;
The described second main electrode exit of described wafer lower surface is fixedly connected with the 2nd PAD with the PAD on described pedestal by conduction primer respectively with the second auxiliary electrode exit;
The described first main electrode exit of described upper wafer surface is fixedly connected with by conducting surface glue with described conduction primer with the first auxiliary electrode exit;
One place of described the 3rd PAD and described wafer lower surface periphery is fixedly connected with by conduction primer, forms to take the triangle that a described PAD, the 2nd PAD and the 3rd PAD be end points.
Beneficial effect of the present invention is: it is 2.2mm * 1.2mm that difference and existing vehicle-mounted crystal oscillator adopt the length of plated film main electrode on traditional 2 fixed forms and wafer * wide, the steadiness bringing is poor, a little less than vibration resistance, easily under vehicle environment, fracture and resistance mean value are bigger than normal, temperature characterisitic can not meet the demands, and affects the problem of the service behaviour of crystal oscillator.The invention provides a kind of crystal oscillator, by the 3rd PAD is set, be fixedly connected with by conduction primer with a place of wafer lower surface periphery, when greatly improving wafer and pedestal and be connected firmly performance and vibration resistance, it is long L:2.2-2.3mm that rectangle the first filming main electrode on wafer and the plated film areal extent of the second plated film main electrode are set, width W: 1.6-1.7mm, when the crystal oscillator within the scope of length and width had not only guaranteed that resistance value is little but also can well meet the requirement of temperature characterisitic, crystal oscillator of the present invention not only has good resistance to shock, there is again good temperature characterisitic, more be adapted to vehicle-mounted middle utilization, can reduce production costs again, promote the yields of crystal oscillator, better adapt to the demand of whole electronic market.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of vehicle mounted crystal oscillator of the embodiment of the present invention;
Fig. 2 is the cutaway view of a kind of vehicle mounted crystal oscillator of embodiment of the present invention structure;
Fig. 3 is the structure chart of wafer on a kind of vehicle mounted crystal oscillator of the embodiment of the present invention.
Fig. 4 is the temperature characteristics figure of the rectangle plated film main electrode area crystal oscillator that is 2.4*1.5;
Fig. 5 is the temperature characteristics figure of the rectangle plated film main electrode area crystal oscillator that is 2.2*1.6.
Label declaration:
1-pedestal; 2-wafer; 3-the one PAD; 4-the 2nd PAD; 5-the 3rd PAD;
6-rectangle the first filming main electrode; 7-the first filming main electrode exit; 8-the first auxiliary electrode exit; 9-the second plated film main electrode exit; 11-conducts electricity primer; 12-conducting surface glue.
Embodiment
By describing technology contents of the present invention, structural feature in detail, being realized object and effect, below in conjunction with execution mode and coordinate accompanying drawing to be explained in detail.
The design of most critical of the present invention is: by increasing the fixing point of place's wafer and pedestal, replace at existing 2 fix with 3 fixed forms, improve the firm performance of wafer and pedestal; On wafer, the length of plated film main electrode area is 2.2-2.3mm, and width is 1.6-1.7mm, and best plated film area makes crystal oscillator have good temperature characterisitic, and resistance value is little.
Refer to Fig. 1 to Fig. 3, a kind of vehicle mounted crystal oscillator, comprises pedestal 1 and wafer 2; Described pedestal 1 is provided with a PAD3, the 2nd PAD4 and the 3rd PAD5, and the upper surface of described wafer 2 is provided with rectangle the first filming main electrode 6, the first filming main electrode exit 7 and the first auxiliary electrode exit 8; The lower surface of described wafer 2 is provided with rectangle second plated film main electrode, second plated film main electrode exit 9 and the second auxiliary electrode exit corresponding with described rectangle the first filming main electrode 6, the first filming main electrode exit 7 and the first auxiliary electrode exit 8;
Described the first filming main electrode exit 7, the second plated film main electrode exit 9, the first auxiliary electrode exit 8 and the second auxiliary electrode exit are positioned at the periphery of described wafer 2, described the first filming main electrode exit 7 is connected with described rectangle the first filming main electrode 6 exits, and described the second plated film main electrode exit 9 is connected with described rectangle the second plated film main electrode exit 9;
The length of described rectangle the first filming main electrode 6 and rectangle the second plated film main electrode is 2.2-2.3mm, and width is 1.6-1.7mm;
The described second main electrode exit of described wafer 2 lower surfaces is fixedly connected with the 2nd PAD4 with the PAD3 on described pedestal 1 by conduction primer 11 respectively with the second auxiliary electrode exit;
The described first main electrode exit of described wafer 2 upper surfaces is fixedly connected with by conducting surface glue 12 with described conduction primer 11 with the first auxiliary electrode exit 8;
One place of described the 3rd PAD5 and described wafer 2 upper surface peripheries is fixedly connected with by conduction primer 11, forms to take the triangle that a described PAD3, the 2nd PAD4 and the 3rd PAD5 be end points.
From foregoing description, beneficial effect of the present invention is: the invention provides a kind of crystal oscillator, on the basis of original 2 fixed forms, by the 3rd PAD5 is set, be fixedly connected with by conduction primer 11 with a place of wafer 2 lower surface peripheries, formation is with a described PAD3, the triangle that the 2nd PAD4 and the 3rd PAD5 are end points, when greatly improving wafer 2 and be connected firmly performance and vibration resistance with pedestal 1, it is long L:2.2-2.3mm that rectangle the first filming main electrode 6 on wafer 2 and the plated film areal extent of the second plated film main electrode are set, width W: 1.6-1.7mm, when the crystal oscillator within the scope of length and width had not only guaranteed that resistance value is little but also can well meet the requirement of temperature characterisitic, crystal oscillator of the present invention not only has good resistance to shock, more be adapted to vehicle-mounted middle utilization, extend the useful life of vehicle mounted crystal oscillator, and guaranteeing also there is good temperature characterisitic under the prerequisite that its resistance value is little, further promote the yields of crystal oscillator, make crystal oscillator can better adapt to the demand of whole electronic market.
It should be noted that, the vehicle-mounted crystal oscillator that 2 fixed forms of existing employing level are made is in practice process, the vibrations of jolting due to car body, can cause unsettled end face on the interior wafer 2 of crystal oscillator to teetertotter, wafer 2 rocks for a long time the viscose glue that can cause on fixing point and occurs peeling off with wafer 2 or pedestal 1, even depart from, finally cause crystal oscillator to lose efficacy, have a strong impact on its useful life.The present invention adopts fixing form the fixing patterns of wafer 2 triangles at 3, utilizes the distinctive firm performance of triangle greatly to promote the vibration resistance of vehicle mounted crystal oscillator, even for a long time in oscillation environment, still there will not be obscission.
Two aspects of size of plated film main electrode on the specific major decision of temperature of crystal oscillator and wafer 2 itself and wafer 2, although increase plated film main electrode size, the resistance of reduction wafer 2 that can be to a certain degree, but the variation of plated film main electrode length and width size can bring the change of crystal oscillator temperature characterisitic again, random increased in size, may cause temperature characterisitic seriously not up to standard, affect the normal use of crystal oscillator, those skilled in the art always constantly study intensively to overcome the problems referred to above, but all lose good achievement, while using in low frequency products in prior art, be to select the crystal oscillator that conventional plated film main electrode area is 2.2mm * 1.2mm, the resistance of this routine crystal oscillator exceeds standard, and although its resistance of crystal oscillator that the plated film main electrode area of another kind of existing routine is 2.4mm * 1.5mm is reduced in critical field, but its temperature characterisitic but exceeds standard, crystal oscillator conventional in visible prior art is difficult to take into account resistance standard and temperature characterisitic standard.
Refer to form, for a kind of vehicle mounted crystal oscillator parameter of the embodiment of the present invention compares form.
Get crystal oscillator conventional in prior art and vehicle mounted crystal oscillator of the present invention and do respectively the test of average electrical resistance and temperature property test experiment, concrete parameter comparative result is in Table lattice.In experiment, be taken at the rectangle the first filming main electrode 6 of wafer 2 in vehicle mounted crystal oscillator of the present invention, the length L of rectangle the second plated film main electrode is 2.2mm, width W is 1.6mm.
Refer to Fig. 4-5 known, the temperature characteristics amplitude of variation of the crystal oscillator that rectangle the first filming main electrode 6 and rectangle the second plated film main electrode area are 2.4*1.5 is larger, and temperature range is between-30-30 degree, and temperature characterisitic is not good; And the temperature characteristics of the crystal oscillator that rectangle plated film main electrode area is 2.2*1.6 tends to be steady, temperature range only, between-10-10 degree, has good temperature characterisitic.
From experimental data, only meet the crystal oscillator that in the present invention, the plated film main electrode area within the scope of length and width is 2.2*1.6mm and just can accomplish to meet in average electrical resistance critical field simultaneously, there is again good temperature characterisitic.
Further, described the 3rd PAD5 is fixedly connected with a drift angle of described wafer 2 lower surfaces by conduction primer 11, and described the 3rd PAD5 and a described PAD3 are to angular dependence.
Further, described the 3rd PAD5 is fixedly connected with a drift angle of described wafer 2 lower surfaces by conduction primer 11, and described the 3rd PAD5 and described the 2nd PAD4 are to angular dependence.
The PAD3 fixing point consisting of such scheme, the 2nd PAD4 fixing point and the 3rd PAD5 fixed point are in the periphery of wafer 2, the firm region of triangle forming thus covers the maximum magnitude of described wafer 2, and the described crystal oscillator that makes that can maximum dynamics has the firm performance of the strongest antivibration.
Further, the diameter that connects the conduction primer 11 at described the 3rd PAD5 and described wafer 2 lower surface periphery one places is 0.23-0.25mm.
It should be noted that, by designing and testing, the diameter control of the conduction primer 11 of the 3rd PAD5 described in the present invention and described wafer 2 lower surface periphery one place's fixing points, between 0.23-0.25mm, now can meet the requirement of crystal oscillator antivibration, and the amplitude that resistance value increases is little.
Further, the rectangle the first filming main electrode 6 on described wafer 2 and rectangle the second plated film main electrode have two-layer plated film, and ground floor plated film is Cr, and second layer plated film is silver.
Because silver and the conjugation of wafer 2 are not fine, particularly in the situation that air humidity is larger during plated film, the adhesive force of silver layer can sharply reduce, after heating or vibrations, be easy to occur the phenomenon that silver layer comes off, silver layer on wafer 2 comes off and will cause the resistance value of crystal resonator to raise, power consumption increases, and even causes crystal resonator not work or the situation of job insecurity.Therefore, this programme adopts first plating Cr layer on wafer 2, after on Cr layer, plate silver layer, because plated film silver layer is not to be directly plated on wafer 2, but be plated on the Cr layer with strong adhesive force, so on wafer 2, the adhesive force of coating promotes greatly, can well avoid occurring desilverization phenomenon.
Further, described wafer 2 is laminar silicon dioxide.
In sum, a kind of vehicle mounted crystal oscillator provided by the invention, needs to possess superpower resistance to shock meeting under the service condition that vehicle mounted frequently jolts for a long time, extends crystal oscillator in the time of useful life, can guarantee that again resistance is little, has good temperature characterisitic; Further, the primer diameter range of the 3rd fixing point adding had both met the requirement of crystal oscillator antivibration, and the amplitude that can make again its resistance value increase is little; Finally, the two-layer coating on wafer 2 can also promote the adhesive force of coating on wafer 2, avoids desilverization phenomenon.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes specification of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (6)
1. a vehicle mounted crystal oscillator, is characterized in that, comprises pedestal and wafer; Described pedestal is provided with a PAD, the 2nd PAD and the 3rd PAD, and the upper surface of described wafer is provided with rectangle the first filming main electrode, the first filming main electrode exit and the first auxiliary electrode exit; The lower surface of described wafer is provided with rectangle second plated film main electrode, second plated film main electrode exit and the second auxiliary electrode exit corresponding with described rectangle the first filming main electrode, the first filming main electrode exit and the first auxiliary electrode exit;
Described the first filming main electrode exit, the second plated film main electrode exit, the first auxiliary electrode exit and the second auxiliary electrode exit are positioned at the periphery of described wafer, described the first filming main electrode exit is connected with described rectangle the first filming main electrode exit, and described the second plated film main electrode exit is connected with described rectangle the second plated film main electrode exit;
The length of described rectangle the first filming main electrode and rectangle the second plated film main electrode is 2.2-2.3mm, and width is 1.6-1.7mm;
The described second main electrode exit of described wafer lower surface is fixedly connected with the 2nd PAD with the PAD on described pedestal by conduction primer respectively with the second auxiliary electrode exit;
The described first main electrode exit of described upper wafer surface is fixedly connected with by conducting surface glue with described conduction primer with the first auxiliary electrode exit;
One place of described the 3rd PAD and described wafer lower surface periphery is fixedly connected with by conduction primer, forms to take the triangle that a described PAD, the 2nd PAD and the 3rd PAD be end points.
2. vehicle mounted crystal oscillator according to claim 1, is characterized in that, described the 3rd PAD is fixedly connected with a drift angle of described wafer lower surface by conduction primer, and described the 3rd PAD and a described PAD are to angular dependence.
3. vehicle mounted crystal oscillator according to claim 1, is characterized in that, described the 3rd PAD is fixedly connected with a drift angle of described wafer lower surface by conduction primer, and described the 3rd PAD and described the 2nd PAD are to angular dependence.
4. vehicle mounted crystal oscillator according to claim 1, is characterized in that, the diameter that connects the conduction primer at described the 3rd PAD and described wafer lower surface periphery one place is 0.23-0.25mm.
5. vehicle mounted crystal oscillator according to claim 1, is characterized in that, the rectangle the first filming main electrode on described wafer and rectangle the second plated film main electrode have two-layer plated film, and ground floor plated film is Cr, and second layer plated film is silver.
6. a kind of crystal oscillator according to claim 1, is characterized in that, described wafer is laminar silicon dioxide.
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| CN201410341999.6A CN104113302A (en) | 2014-07-17 | 2014-07-17 | Vehicle-mounted crystal oscillator |
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| CN201410341999.6A CN104113302A (en) | 2014-07-17 | 2014-07-17 | Vehicle-mounted crystal oscillator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107196646A (en) * | 2017-07-07 | 2017-09-22 | 唐山国芯晶源电子有限公司 | Ceramic package chip self-heating low-power consumption constant-temperature crystal oscillator |
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Application publication date: 20141022 |