CN202931262U - Base structure for quartz oscillator - Google Patents
Base structure for quartz oscillator Download PDFInfo
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- CN202931262U CN202931262U CN 201220653258 CN201220653258U CN202931262U CN 202931262 U CN202931262 U CN 202931262U CN 201220653258 CN201220653258 CN 201220653258 CN 201220653258 U CN201220653258 U CN 201220653258U CN 202931262 U CN202931262 U CN 202931262U
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Abstract
Disclosed is a base structure for a quartz oscillator, comprising a substrate, wherein the back side of the substrate is provided with an external electrode while the right side of the substrate is provided with a kovar ring at the top layer; the interior of the substrate is provided with a groove at the central section; the groove is internally and sequentially provided with a wafer embarkation platform layer, an IC embarkation platform layer, and an inside-and-outside electrode connecting auxiliary layer in an overlaying manner from top to bottom; the wafer embarkation platform layer and the IC embarkation platform layer are respectively provided with a wafer pin inner electrode and an IC pin inner electrode; and each layer of the substrate is provided with through holes or the sidewall is provided with conductive grooves, thereby realizing circuit conduction. As the groove for the gluing installation of quartz wafers and IC is directly provided in the substrate, the overall thickness of the product is decreased, thereby simplifying the base structure and making the product be more miniaturized. In addition, the base structure of the utility model avoids multi-layer lamination and avoids leakage and foaming problems during the packaging process.
Description
Technical field
The utility model relates to quartz (controlled) oscillator, relates in particular to a kind of base construction that mounts quartz (controlled) oscillator.Background technology
In recent years, quartzy product is in the speed increment of global annual sales by 15% left and right, according to statistics, global quartzy product sales approximately reached more than 3,000,000,000 dollars in 2000, be accompanied by the develop rapidly in the application product such as cordless telephone, mobile phone, notebook computer and network market, the SMD quartz crystal frequency device is more towards the lightening high frequency evolution of miniaturization, the SMD quartz oscillator is because of its built-in IC like this, do not need peripheral circuit that frequency directly is provided, the advantage that easy to operate space occupancy is less more and more is received by the market.
Therefore, for adapting to this trend toward miniaturization, SMD quartz oscillator model is also by 7050 types, and 5032 types, 3225 types develop into 2520 types of today.But along with the high-precision development of miniaturization high frequencyization, quality requirements for quartz (controlled) oscillator is also more and more severeer, therefore quartz crystal manufacturer wishes to test to improve by strengthening wafer characteristics the quality of oscillator, the risk of avoiding client to lose efficacy, and 2520 traditional type quartz (controlled) oscillators can only be tested by the electrode on the sidewall of pedestal two ends, and because the compact cause of product itself, this method of testing is not only to testing equipment, technological requirement is tighter, and in actual production process complicated operation, affect production efficiency and product percent of pass.
The pedestal development and Design of therefore being more convenient for operating just seems particularly important, its base construction with respect to traditional SMD quartz oscillator is more complicated, level is more, the machinery wiring is also stricter between layers, so processing technology more complicated, and easily cause became uneven after multiple-layer stacked, be easy to cause the not firm phenomenon of gas leakage, foaming, coating after encapsulation, therefore to technique, temperature, equipment etc. have very high requirement, need further to design that a electrical property is good, rational in infrastructure, easy processing, the pedestal that just uses.
Summary of the invention
The utility model is for above-mentioned the deficiencies in the prior art, and a kind of gas leak phenomenon can effectively avoid encapsulating the time is provided, and is simple in structure, easy to process, can facilitate the base construction of the quartz (controlled) oscillator of testing inner wafer characteristics when reducing product thickness.
The technical solution of the utility model is achieved in that
A kind of base construction of quartz (controlled) oscillator, include substrate, be provided with external electrode on the back side of substrate, the superiors in substrate front side are provided with kovar ring, be provided with a groove in middle, substrate inside, wafer-carrying podium level, IC carrying platform layer and internal and external electrode line auxiliary layer have been stacked successively from top to bottom in groove, be respectively equipped with electrode in electrode in the wafer pin, IC pin on wafer-carrying podium level, IC carrying platform layer, on every one deck of substrate by via hole being set or offering conductive trough and realize circuit turn-on on sidewall.
As preferably, offer conductive trough on the sidewall of substrate, wafer-carrying podium level, IC carrying platform layer and internal and external electrode line auxiliary layer, and be printed with the conducting wire that is communicated with in the wafer pin electrode and external electrode in electrode, IC pin in conductive trough.
As preferably, in the wafer pin, electrode is arranged on the end in the wafer-carrying podium level, and the other end of wafer-carrying podium level is provided with the support portion of supporting wafers, and the height of support portion is identical with the height of the interior electrode of wafer pin.
As preferably, the middle part of IC carrying platform layer is provided with the IC mounting groove, and in the IC pin, distribution of electrodes is in the surrounding of IC mounting groove.
As preferably, be provided with 6 external electrodes at substrate back, two central authorities that are distributed in the substrate back upper and lower side wherein, other four are distributed in four edges of substrate back.
Adopted the beneficial effects of the utility model of technique scheme to be:
Because the groove that mounts quartz wafer and IC is directly to be opened on substrate, so reduced the integral thickness of product, simplified base construction, make product miniaturization more; Avoided simultaneously multiple-layer stacked, gas leakage when preventing from encapsulating, the generation of foaming phenomenon.
In addition, also be provided with the support portion in groove, the height of described support portion is identical with the height of interior electrode, thereby in the time of can making quartz wafer be arranged in groove, can not produce rugged phenomenon, thereby guarantee its stability; Designed IC carrying platform layer in groove below the wafer-carrying podium level, the base plate characteristics design of this IC carrying platform layer is earthing type, and strictly simplifies the shape of each distributing, makes every effort to coordinate to greatest extent each pin layout of IC; Be provided with the quartz wafer external electrode at the back side of substrate, can realize conveniently testing inner wafer characteristics.
Description of drawings
Fig. 1 is the positive inner structural representation of the utility model pedestal;
Fig. 2 is the planar structure schematic diagram of the pedestal the superiors;
Fig. 3 is the structural representation of wafer-carrying podium level;
Fig. 4 is the structural representation of IC carrying platform layer;
Fig. 5 is the structural representation of internal and external electrode line auxiliary layer;
Fig. 6 is the distribution schematic diagram of pedestal back side external electrode.
Embodiment
Embodiment of the present utility model is as follows:
Embodiment: as Fig. 1～shown in Figure 6, the base construction of a kind of quartz (controlled) oscillator of the utility model, include substrate, be provided with external electrode on the back side of substrate, there is kovar ring 9 in the superiors of substrate, the inner fluted I of substrate has stacked wafer-carrying podium level II, IC carrying platform layer III and internal and external electrode line auxiliary layer from top to bottom successively in the groove I.
Wafer-carrying podium level II is designed with electrode 7 in the quartz wafer pin, support portion 14; IC carrying platform layer III drawn electrode 1,2,3,4,5,6 in the IC pin of electric function around the IC mounting groove.
The conductive trough of each layer upright position is realized conducting by plated film on the respective side seamed edge.
As shown in Figure 2, be provided with kovar ring 9 in the superiors of substrate front side, its by via hole 11g pass through wafer-carrying podium level II arrive IC carrying platform layer III the IC pin in electrode 1.
Wafer-carrying podium level as shown in Figure 3, electrode 7 contains positive electrode A and negative electrode B in the wafer pin, lateral electrode 13a and 13b, and be printed with in conductive trough 10a, 10b be communicated with in conducting wire 12a, the 12b of electrode A, B and lateral electrode 13a, 13b; And pass through via hole 11a, 11b with electrode 2,3 conductings in the IC pin of the IC carrying platform layer of interior electrode A, B and lower one deck.
As shown in Figure 4, IC carrying platform layer is provided with conductive trough 10a, 10b, 10c, 10d, 10e, 10f and the corresponding interior electrode 3,2,4,1,6,5 of IC pin; Be printed with respectively conducting wire 12a, the 12b, 12c, 12d, 12e, the 12f that are communicated with both in above-mentioned conductive trough; In the IC pin that wherein can not directly be communicated with, electrode 4,6 arrives lower one deck by via hole 11c, 11d respectively, and as shown in Figure 5, they are conducted by conducting wire 12g, 12h and conductive trough 10c, 10e again.As shown in Figure 3, electrode 3 in the IC pin, 2 by via hole 11a, 11b arrive last layer again with conductive trough 10a, 10b conducting.
As shown in Figure 5, internal and external electrode line auxiliary layer is mainly established conductive trough 10a, 10b, 10c, 10d, 10e, 10f, conducting wire 12g, 12h, and via hole 11e, 11f.And via hole 11e, 11f to the motor seat back side respectively with external electrode 8a, 8b conducting.
As shown in Figure 6, be provided with external electrode at substrate back, external electrode has 6, two central authorities that are distributed in the substrate back upper and lower side wherein, other four are distributed in 4 edges of substrate back, and wherein external electrode 8a is by via hole 11e, and the conductive trough 10a of lateral edges is connected with electrode 2 in the IC pin; Wherein external electrode 8b is by via hole 11f, and the conductive trough 10b of lateral edges is connected with electrode 3 in the IC pin; External electrode 8c is connected with electrode 4 in the IC pin by the conductive trough 10c of its lateral edges; External electrode 8d is connected with electrode 1 in the IC pin by the conductive trough 10d of its lateral edges; External electrode 8e is connected with electrode 6 in the IC pin by the conductive trough 10e of its lateral edges; External electrode 8f is connected with electrode 5 in the IC pin by the conductive trough 10f of its lateral edges.
Will specify in addition, how the positive and negative electrode of wafer-carrying podium level inside is connected with the external electrode of substrate back.Carry the electrode A of wafer by conductive trough 10a in the wafer-carrying podium level, via hole 11e finally is connected with external electrode 8a; Carry the electrode B of wafer by conductive trough 10b in the wafer-carrying podium level, via hole 11f finally is connected with external electrode 8b.
Claims (5)
1. the base construction of a quartz (controlled) oscillator, it is characterized in that: include substrate, be provided with external electrode on the back side of substrate, the superiors in substrate front side are provided with kovar ring, be provided with a groove in middle, substrate inside, wafer-carrying podium level, IC carrying platform layer and internal and external electrode line auxiliary layer have been stacked successively from top to bottom in groove, be respectively equipped with electrode in electrode in the wafer pin, IC pin on wafer-carrying podium level, IC carrying platform layer, on every one deck of substrate by via hole being set or offering conductive trough and realize circuit turn-on on sidewall.
2. the base construction of a kind of quartz (controlled) oscillator according to claim 1, it is characterized in that: offer conductive trough on the sidewall of substrate, wafer-carrying podium level, IC carrying platform layer and internal and external electrode line auxiliary layer, and be printed with the conducting wire that is communicated with in the wafer pin electrode and external electrode in electrode, IC pin in conductive trough.
3. the base construction of a kind of quartz (controlled) oscillator according to claim 1, it is characterized in that: in the wafer pin, electrode is arranged on the end in the wafer-carrying podium level, the other end of wafer-carrying podium level is provided with the support portion of supporting wafers, and the height of support portion is identical with the height of electrode in the wafer pin.
4. the base construction of a kind of quartz (controlled) oscillator according to claim 1, it is characterized in that: the middle part of IC carrying platform layer is provided with the IC mounting groove, and in the IC pin, distribution of electrodes is in the surrounding of IC mounting groove.
5. the base construction of a kind of quartz (controlled) oscillator according to claim 1 is characterized in that: be provided with 6 external electrodes at substrate back, and two central authorities that are distributed in the substrate back upper and lower side wherein, other four are distributed in four edges of substrate back.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220653258 CN202931262U (en) | 2012-11-29 | 2012-11-29 | Base structure for quartz oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220653258 CN202931262U (en) | 2012-11-29 | 2012-11-29 | Base structure for quartz oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202931262U true CN202931262U (en) | 2013-05-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220653258 Expired - Lifetime CN202931262U (en) | 2012-11-29 | 2012-11-29 | Base structure for quartz oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202931262U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113302A (en) * | 2014-07-17 | 2014-10-22 | 深圳市福浪电子有限公司 | Vehicle-mounted crystal oscillator |
| CN109633399A (en) * | 2018-12-20 | 2019-04-16 | 北京无线电计量测试研究所 | A kind of Testing device of electrical parameter of quartz wafer |
-
2012
- 2012-11-29 CN CN 201220653258 patent/CN202931262U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113302A (en) * | 2014-07-17 | 2014-10-22 | 深圳市福浪电子有限公司 | Vehicle-mounted crystal oscillator |
| CN109633399A (en) * | 2018-12-20 | 2019-04-16 | 北京无线电计量测试研究所 | A kind of Testing device of electrical parameter of quartz wafer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 2880, Moganshan Road, Liangzhu street, Yuhang District, Hangzhou, Zhejiang 310000 Patentee after: Hongxing Technology (Group) Co.,Ltd. Address before: Liang Bo Road Liangzhu town Yuhang District Hangzhou city Zhejiang province 311113 No. 242 Patentee before: HANGZHOU HOSONIC ELECTRONICS Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130508 |
|
| CX01 | Expiry of patent term |