CN104112978A - Vertical laminated optical path module and multi-die semiconductor laser - Google Patents

Vertical laminated optical path module and multi-die semiconductor laser Download PDF

Info

Publication number
CN104112978A
CN104112978A CN201410327837.7A CN201410327837A CN104112978A CN 104112978 A CN104112978 A CN 104112978A CN 201410327837 A CN201410327837 A CN 201410327837A CN 104112978 A CN104112978 A CN 104112978A
Authority
CN
China
Prior art keywords
optical path
path unit
cos
module
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410327837.7A
Other languages
Chinese (zh)
Inventor
杨朝栋
姜笑尘
刘瑞
高燕燕
何晓光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BWT Beijing Ltd
Original Assignee
BWT Beijing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BWT Beijing Ltd filed Critical BWT Beijing Ltd
Priority to CN201410327837.7A priority Critical patent/CN104112978A/en
Publication of CN104112978A publication Critical patent/CN104112978A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention relates to the technical field of laser, and particularly relates to a vertical laminated optical path module and a multi-die semiconductor laser. The vertical laminated optical path module comprises a heat sink module and N optical path units, N being a positive integer larger than or equal to 2. Each optical path unit comprises a semiconductor laser chip CoS with auxiliary heat sink, a fast axis collimating lens and a slow axis collimating lens. One surface of the heat sink module is in the shape N+1 steps, from the first step to the N+1 steps from low to high, wherein the first step is provided with N-1 lens frames. The multi-die semiconductor laser comprises a step-shaped bottom board and a plurality of vertical laminated optical path modules, wherein the plurality of vertical laminated optical path modules are fixed to the different steps of the step-shaped bottom board respectively. According to the vertical laminated optical path module and the multi-die semiconductor laser, modularization of a plurality of optical paths are realized, process repeatability and stability are guaranteed, and space utilization rate of the multi-die semiconductor laser is improved.

Description

A kind of vertical stack formula light path module and a kind of multi-die semiconductor laser
Technical field
The present invention relates to laser technology field, relate in particular to a kind of vertical stack formula light path module and a kind of multi-die semiconductor laser.
Background technology
In current multi-die semiconductor laser, conventionally the optical elements such as auxiliary heat sink multiple bands semiconductor laser chip (CoS), multiple fast axis collimation lens and multiple slow axis collimating lenses are all integrated on same base plate, and in order to increase the power of semiconductor laser, conventionally can integrated more unit component, the space that whole like this semiconductor laser takies in the horizontal direction will showed increased; The light beam that when work, each CoS sends, after fast axis collimation lens slow axis collimating lens collimation, becomes collimated light beam, then passes through turning to of speculum, reflexes to coupling mirror and converges, last coupled into optical fibres.Because CoS is welded on base plate, if certain breaks down, just need to again change, and base plate is to adopt the metal of high thermal conductivity to make, change in the process of CoS, can affect other unit component, need to again carry out adjustment to them, this all unit components altogether the space integration mode of base plate can not ensure the process repeatability of product and ensure different chip products between versatility, and detachability is poor, maintenance cost is high, and labor intensive is difficult to realize the mass production of multi-die semiconductor laser.
Summary of the invention
The technical problem existing for above-mentioned prior art, the invention provides a kind of vertical stack formula light path module, the present invention also aims to provide a kind of multi-die semiconductor laser.
The invention discloses a kind of vertical stack formula light path module, comprising: a heat sink module and N optical path unit, wherein N is more than or equal to 2 positive integer; A described N optical path unit is followed successively by the first optical path unit to the N optical path unit;
Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band;
It is step-like that the one side of described heat sink module is N+1 level, is followed successively by from low to high first order step to the N+1 level step;
On described first order step, be provided with N-1 lens mount;
Fast axis collimation lens in each optical path unit is separately fixed at the front end of the CoS of optical path unit self, and the front end of described CoS is that one end of CoS output beam;
In a described N optical path unit, CoS in CoS to the N optical path unit in the first optical path unit is fixed on respectively on step to the N+1 level step of the second level successively, slow axis collimating lens in the first optical path unit is directly fixed on first order step, and the slow axis collimating lens in the second optical path unit to the N optical path unit is fixed on respectively on different lens mounts successively;
Each lens mount is made up of two columns that keep at a certain distance away and highly equate, and described two columns are separately positioned on the both sides of the output beam of the CoS in each optical path unit;
The optical axis of the optical axis of the output beam of the CoS in each optical path unit, the optical axis of fast axis collimation lens and slow axis collimating lens is on same straight line;
The output beam of CoS in each optical path unit is only by the slow axis collimating lens of optical path unit self;
The optical axis of the output beam of the CoS in a described N optical path unit is all in same vertical plane and be parallel to each other.
Optionally, in described heat sink module, be provided with at least two counterbores, for described vertical stack formula light path module being fixed to the step base plate of multi-die semiconductor laser;
Described heat sink module is from step to the N+1 level step of the second level, and the edge of every grade of step is all provided with a side strip, and the CoS in each optical path unit is located and is fixed on step by side strip.
Optionally, in the time that N equals 2, described vertical stack formula light path module comprises two optical path units, is respectively the first optical path unit and the second optical path unit;
The one side of described heat sink module be three grades step-like, be respectively first order step, second level stage and third level step;
On the first order step of described heat sink module, be provided with a lens mount;
In described heat sink module, be provided with two counterbores, be respectively the first counterbore and the second counterbore; Described the first counterbore, between described lens mount and described second level step, and is arranged on first order step; Described second counterbore is arranged on third level step;
CoS in described the first optical path unit is fixed on the step of the second level, and slow axis collimating lens is directly fixed on described first order step;
CoS in described the second optical path unit is fixed on third level step, and slow axis collimating lens is fixed on lens mount;
Between the slow axis collimating lens of described lens mount in described the first counterbore and described the first optical path unit;
Described lens mount is higher than second level step, described lens mount is lower than third level step, the below of the slow axis collimating lens for the output beam of the CoS of the first optical path unit from described the second optical path unit is passed through, and the top of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from described the first optical path unit is passed through.
Optionally, in the time that N is greater than 2, along the direction of propagation of the output beam of described CoS, set gradually respectively a described N-1 lens mount, a described N-1 lens mount is respectively N-1 lens mount to first lens frame, and successively decreases highly gradually;
In described vertical stack formula light path module, the difference in height of adjacent two CoS equates.
Optionally, in the time that N equals 3, described vertical stack formula light path module comprises three optical path units, is respectively the first optical path unit, the second optical path unit and the 3rd optical path unit;
On described first order step, be provided with two lens mounts, be respectively first lens frame and the second lens mount, first lens frame is lower than in the second lens mount;
It is step-like that the one side of described heat sink module is level Four, is respectively first order step, second level stage, third level step and fourth stage step;
CoS in described the first optical path unit is fixed on the step of the second level, and slow axis collimating lens is directly fixed on described first order step;
CoS in described the second optical path unit is fixed on third level step, and slow axis collimating lens is fixed on described first lens frame;
CoS in described the 3rd optical path unit is fixed on fourth stage step, and slow axis collimating lens is fixed on described the second lens mount;
Between the slow axis collimating lens of first lens chord position in described the second lens mount and described the first optical path unit;
Described second level step is lower than described first lens frame, described third level step is lower than described the second lens mount, described third level step is higher than described first lens frame, described fourth stage step is higher than described the second lens mount, the below of the slow axis collimating lens for the output beam of the CoS of the first optical path unit from described the second optical path unit is passed through, the below of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from described the 3rd optical path unit is passed through, the top of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from described the first optical path unit is passed through, the top of the slow axis collimating lens of the output beam of the CoS in the 3rd optical path unit from described the second optical path unit is passed through,
In described heat sink module, be provided with two counterbores, be respectively the first counterbore and the second counterbore, described the first counterbore, between described the second lens mount and described second level step, and is arranged on first order step, and described second counterbore is arranged on fourth stage step;
Optionally, described vertical stack formula light path module also comprises one or more in Volume Bragg grating, thermistor and counnter attack sheet; Described heat sink module adopts high thermal conductivity metal to make.
The invention also discloses a kind of multi-die semiconductor laser, comprising: step base plate and multiple described vertical stack formula light path module;
Multiple vertical stack formula light path modules are separately fixed on the different steps of step base plate, on each step that is fixed with vertical stack formula light path module, are provided with at least two fixing holes, for fixed vertical laminated type light path module.
Optionally, described step base plate adopts high thermal conductivity metal to make;
Optionally, on described each step that is fixed with vertical stack formula light path module, be provided with two fixing holes, described two fixing holes are all screwed hole; Two counterbores in each vertical stack formula light path module are corresponding with the position of two fixing holes on each step that is fixed with vertical stack formula light path module;
Described multiple vertical stack formula light path module is fixed on the step of step base plate in the mode being threaded respectively;
In described step base plate, the difference in height of adjacent two steps equates;
In each vertical stack formula light path module the difference in height of adjacent two CoS be the difference in height of adjacent two steps in described step base plate m doubly, wherein m is more than or equal to 2 positive integer.
Optionally, described multi-die semiconductor laser also comprises: multiple speculums, a coupling mirror and a coupled fiber;
Each vertical stack formula light path module is corresponding with n speculum, and wherein n equals the number of CoS in each vertical stack formula light path module;
N corresponding speculum of each vertical stack formula light path module is vertically fixed on respectively on the step at corresponding vertical stack formula light path module place successively along the direction of propagation of the output beam of CoS in corresponding vertical stack formula light path module, and the height of a described n speculum increases gradually, for the output beam of the CoS in the each optical path unit of described corresponding vertical stack formula light path module being reflexed to the plane of incidence of coupling mirror;
Described coupled fiber is positioned at a side at the exit facet place of described coupling mirror, and the axis of described coupling mirror and the axis of described coupled fiber are located along the same line.
Compared with prior art, technique effect of the present invention is:
The present invention is by being integrated in N CoS, a N fast axis collimation lens and N slow axis collimating lens in same heat sink module, and by they reasonable layouts in vertical direction, form an independently semiconductor laser unit device, it is vertical stack formula light path module, thereby the modularization that has realized multiple light paths, takes full advantage of the useful space, can ensure very high process repeatability and stability debuging in process, simplify workman's operation, improving production efficiency.Compare with the Coupling device of automation, debuging of vertical stack formula light path module possesses more flexibility, higher than automation equipment coupling efficiency, and realize the mass production of multi-die semiconductor laser, improve the space availability ratio of multi-die semiconductor laser, solve product component versatility problem between different Multi-core products, reduced the cost of product in development and production process.
Brief description of the drawings
Fig. 1 is the structural representation of the vertical stack formula light path module embodiment mono-in the present invention;
Fig. 2 is that the A of the vertical stack formula light path module embodiment mono-in the present invention is to view;
Fig. 3 is the structural representation of the vertical stack formula light path module embodiment bis-in the present invention;
Fig. 4 is that the A of the vertical stack formula light path module embodiment bis-in the present invention is to view;
Fig. 5 is the structural representation of step base plate in the multi-die semiconductor laser in the embodiment of the present invention;
Fig. 6 is the structural representation of the multi-die semiconductor laser in the embodiment of the present invention;
In figure: vertical stack formula light path module 100,200; Heat sink module 101,201; The auxiliary heat sink semiconductor laser chip CoS102,202 of band; Fast axis collimation lens 103,203; Slow axis collimating lens 104,204; First order step 105,205; Second level step 106,206; Third level step 107,207; Fourth stage step 208; Lens mount 108; First lens frame 209; The second lens mount 210; The first counterbore 111,211; The second counterbore 112,212; Side strip 113,213; Step base plate 300; Fixing hole 301; Speculum 401; Coupling mirror 402; Coupled fiber 403.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The unit component in semiconductor laser is distinguished modularization by the present invention, and in order to make full use of space availability ratio, multiple light path vertical distribution, in heat sink module, are formed to vertical stack formula light path module.
Vertical stack formula light path module instance one
Fig. 1 is the structural representation of the vertical stack formula light path module embodiment mono-in the present invention; Fig. 2 is that the A of the vertical stack formula light path module embodiment mono-in the present invention is to view.As depicted in figs. 1 and 2, the invention discloses a kind of vertical stack formula light path module 100, comprising: a heat sink module 101 and two optical path units; Two optical path units are followed successively by the first optical path unit to the second optical path unit; Each optical path unit comprises the auxiliary heat sink semiconductor laser chip CoS of band 102, fast axis collimation lens 103 and a slow axis collimating lens 104.The one side of heat sink module 101 be three grades step-like, be followed successively by from low to high first order step 105, second level step 106 and third level step 107, the height of step increases progressively gradually.The installation that can facilitate optical element is set like this, and is conducive to heat radiation, the width on every stage rank can be determined according to the physical dimension of each optical element and their installation sites on step.
On the first order step 105 of heat sink module, be provided with a lens mount 108, lens mount 108 is to be made up of two columns that keep at a certain distance away and highly equate, two columns are separately positioned on the both sides of the output beam of the CoS in each optical path unit, two structures that solid can be integrated with heat sink module; In heat sink module, be provided with two counterbores, be respectively the first counterbore 111 and the second counterbore 112; Described the first counterbore 111, between described lens mount 108 and described second level step 106, and is arranged on first order step 105; Second counterbore 112 is arranged on third level step 107.Being provided with counterbore can be fixed to vertical stack formula light path module 100 on the step base plate in multi-die semiconductor laser by screw, like this vertical stack formula light path module 100 is fixed to after multi-die semiconductor laser, the head of screw will submerge in counterbore completely, avoid screw protruding in ledge surface, block the light beam that CoS 102 exports.
Heat sink module from second level step to third level step, the edge of every grade of step, all be provided with as shown in Figure 1 a side strip 113, side strip is the projection of strip, CoS 102 in each optical path unit is fixed on step by side strip 113 location, can facilitate like this installation of CoS, be convenient to adjustment.
Fast axis collimation lens 103 in each optical path unit is separately fixed at the front end of the CoS 102 of optical path unit self; The front end of CoS 102, is that one end of CoS 102 output beams; CoS 102 in the first optical path unit is fixed on second level step 106.On the fixing first order step 105 of the direct 104 use glue of slow axis collimating lens; CoS 102 in the second optical path unit is fixed on third level step, and slow axis collimating lens 104 use glue are fixed on lens mount 108, on the top end face of two of lens mount 108 columns; In order to ensure good heat conduction, CoS 102 available metal scolders are sintered to fix.Between the slow axis collimating lens 104 of lens mount 108 in the first counterbore 111 and the first optical path unit; When CoS, fast axis collimation lens and slow axis collimating lens are installed, can pass through micropositioning stage, make optical axis, the optical axis of fast axis collimation lens and the optical axis of slow axis collimating lens of the output beam of the CoS in each optical path unit on same straight line, can avoid like this differing from axle introducing optics of optical element, cause beam quality to decline, affect follow-up coupling efficiency.In two optical path units of vertical stack formula light path module 100, the optical axis of the output beam of CoS 102 is all in same vertical plane and be parallel to each other.
As shown in Figure 2, from the A of vertical stack formula light path module 100 to the output beam propagation path schematic diagram of observing CoS 102 each optical path unit, as shown by arrows.Lens mount 108 is higher than second level step 106, lens mount 108 is lower than third level step 107, the below of the slow axis collimating lens 104 for the output beam of the CoS 102 of the first optical path unit from the second optical path unit is passed through, and the top of the slow axis collimating lens 104 of the output beam of the CoS 102 in the second optical path unit from described the first optical path unit is passed through.
Output beam in order to ensure the CoS 102 in each optical path unit only passes through the slow axis collimating lens 104 of optical path unit self, select the slow axis collimating lens that is applicable to height.
Vertical stack formula light path module embodiment bis-
Fig. 3 is the structural representation of the vertical stack formula light path module embodiment bis-in the present invention; Fig. 4 is that the A of the vertical stack formula light path module embodiment bis-in the present invention is to view.As shown in Figure 3 and Figure 4, the invention discloses a kind of vertical stack formula light path module 200, comprising: a heat sink module 201 and three optical path units, be respectively the first optical path unit, the second optical path unit and the 3rd optical path unit.Each optical path unit comprises the auxiliary heat sink semiconductor laser chip CoS of band 202, fast axis collimation lens 203 and a slow axis collimating lens 204; It is step-like that heat sink module 201 steps are level Four, is respectively first order step 205, second level stage 206, third level step 207 and fourth stage step 208, and first order step to the height of fourth stage step increases progressively gradually; On first order step 205, be provided with two lens mounts, from a side at first order step 205 and the place, border of second level platform 206, along the direction of propagation of the output beam of the CoS in each optical path unit, set gradually respectively above-mentioned two lens mounts, and successively decrease highly gradually, above-mentioned two lens mounts are respectively the second lens mount 210 and first lens frame 209, the second lens mounts 210 higher than first lens frame 209.
Fast axis collimation lens 203 in each optical path unit is separately fixed at the front end of the CoS 202 of optical path unit self, and the front end of described CoS 202 is that one end of CoS 202 output beams.
CoS 202 in the first optical path unit is fixed on second level step 206, and the slow axis collimating lens 204 in the first optical path unit is directly fixed on first order step 205; CoS 202 in the second optical path unit is fixed on third level step 207, and the slow axis collimating lens 204 in the second optical path unit is fixed on first lens frame 209, on the top end face of two of lens mount 209 columns.
CoS 202 in the 3rd optical path unit is fixed on fourth stage step 208, and the slow axis collimating lens 204 in the 3rd optical path unit is fixed on the second lens mount 210, on the top end face of two of lens mount 210 columns; The installation regulative mode of optical axis, the optical axis of fast axis collimation lens and the optical axis of slow axis collimating lens that makes the output beam of the CoS in each optical path unit on same straight line is identical with embodiment mono-with effect.The optical axis of the output beam of the CoS in three optical path units of vertical stack formula light path module 200 is all in same vertical plane and be parallel to each other.
In vertical stack formula light path module 200, the difference in height of all adjacent two CoS all equates, the difference in height of the CoS on CoS and the third level step 207 on fourth stage step 208 equals the difference in height of the CoS on CoS and the second level step 206 on third level step 207.
As shown in Figure 4, from the A of vertical stack formula light path module 200 to the output beam propagation path schematic diagram of observing CoS each optical path unit, as shown by arrows.Between the slow axis collimating lens of first lens frame 209 in the second lens mount 210 and the first optical path unit, second level step 206 is lower than first lens frame 209, third level step 207 is lower than the second lens mount 210, third level step 207 is higher than first lens frame 209, fourth stage step 208 is higher than the second lens mount 204, the below of the slow axis collimating lens for the output beam of the CoS of the first optical path unit from the second optical path unit is passed through, the below of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from the 3rd optical path unit is passed through, the top of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from the first optical path unit is passed through, the top of the slow axis collimating lens of the output beam of the CoS in the 3rd optical path unit from the second optical path unit is passed through, output beam in order to ensure the CoS in each optical path unit only passes through the slow axis collimating lens of optical path unit self, select the slow axis collimating lens that is applicable to height.
In heat sink module, be provided with two counterbores, be respectively the first counterbore 211 and the second counterbore 212; The first counterbore 211, between described the second lens mount 210 and described second level step 206, and is arranged on first order step 205; Second counterbore 212 is arranged on fourth stage step 208.
Heat sink module from second level step to fourth stage step, the edge of every grade of step, is all provided with a side strip 213 as shown in Figure 3, the projection that side strip is strip, the CoS 213 in each optical path unit is fixed on step by side strip 213 location.
The effect of two counterbores and side strip is with to implement effect in one identical.
At embodiment mono-with in implementing two, in order to ensure good thermal diffusivity, heat sink module can adopt high thermal conductivity metal to make, for example: copper.One or more in heat sink module in all right fixed body Bragg grating, thermistor, counnter attack sheet.Slow axis collimating lens can also be fixed on lens mount two columns between, slow axis collimating lens hang be fixed between two columns.The position of counterbore can also determining according to actual conditions.
Further specifically describe below the embodiment of the multi-die semiconductor laser that comprises 7 vertical stack formula light path modules.
Multi-die semiconductor laser embodiment
Fig. 5 is the structural representation of step base plate in the multi-die semiconductor laser in the embodiment of the present invention, and Fig. 6 is the structural representation of the multi-die semiconductor laser in the embodiment of the present invention.As illustrated in Figures 5 and 6, the present embodiment discloses a kind of multi-die semiconductor laser, comprising: step base plate 300 and multiple vertical stack formula light path module 100; Multi-die semiconductor laser also comprises: multiple speculum 401, coupling mirror 402 and a coupled fiber 403;
Multiple vertical stack formula light path modules 100 are respectively by being screwed on the different steps of step base plate 300, on each step that is fixed with vertical stack formula light path module 100, be provided with two fixing holes 301, for fixed vertical laminated type light path module 100.Two fixing holes 301 are all screwed hole; Two counterbores in each vertical stack formula light path module are corresponding with the position of two fixing holes on each step that is fixed with vertical stack formula light path module; In step base plate 300, the difference in height of all adjacent two steps all equates; In each vertical stack formula light path module 100 difference in height of adjacent two CoS be the difference in height of adjacent two steps in step base plate 300 m doubly, wherein m is more than or equal to 2 positive integer, and this mode can ensure that the output beam of CoS in each vertical stack formula light path module 100 reflects rear space at process speculum 401 and arranges not overlapping each other.
Each vertical stack formula light path module is corresponding with two speculums 401, two corresponding speculums 401 of each vertical stack formula light path module 100 are vertically fixed on respectively on the step at corresponding vertical stack formula light path module 100 places successively along the direction of propagation of the output beam of CoS in corresponding vertical stack formula light path module 100, and the height of two speculums 401 increases gradually, the reflecting surface of each speculum 401 is 45 ° with the angle that the straight line at the optical axis of fast axis collimation lens in the vertical stack formula light path module 100 of answering in contrast and the optical axis place of slow axis collimating lens becomes, for the output beam of the CoS in corresponding vertical stack formula light path module 100 each optical path units being reflexed to the plane of incidence of coupling mirror 402, wherein, in each vertical stack formula light path module 100, the output beam of the CoS of the first optical path unit is reflected by that highly lower speculum 401, and the output beam of the CoS of the second light path light unit is reflected by another speculum 401.For ensureing that two light beams in each vertical stack formula light path module 100 are reflected by each self-corresponding speculum 401, the height of speculum 401 will be determined according to actual conditions.
Coupled fiber 403 is positioned at a side at the exit facet place of coupling mirror 402, and the axis of the axis of coupling mirror 402 and coupled fiber 403 is located along the same line.
The light beam that reflexes to the plane of incidence of coupling mirror 402 is collimated light beam, and collimated light beam is coupled into coupled fiber 403 after converging finally by coupling mirror 402.
In order to ensure good thermal diffusivity, step base plate 300 can adopt high thermal conductivity metal to make, for example: copper.
In an alternative embodiment of the invention, the step base plate of multi-die semiconductor laser also can design the height of step and the position of fixing hole in step base plate according to the concrete size of the vertical stack formula light path module 200 in embodiment bis-, and the multiple vertical stack formula light path modules 200 in embodiment bis-are fixedly mounted on respectively on step, be assembled into multi-die semiconductor laser.Each vertical stack formula light path module 200 is corresponding with three speculums.The height of three the relative speculums method definite with the multi-die semiconductor laser embodiment that comprises vertical stack formula light path module 100 with position relationship is identical.
In sum, the present invention is by being integrated in CoS, fast axis collimation lens and the slow axis collimating lens with same number in same heat sink module, and by they reasonable layouts in vertical direction, form a vertical stack formula light path module, thereby realize the modularization of multiple light paths, can ensure very high process repeatability and stability debuging in process.Realize the mass production of multi-chip semiconductor laser, improved the space availability ratio of multi-die semiconductor laser, solved multi-chip product component versatility problem between different multi-chip products.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.All any amendments of doing within the spirit and principles in the present invention, be equal to replacement, improvement etc., be all included in protection scope of the present invention.

Claims (10)

1. a vertical stack formula light path module, is characterized in that, comprising: a heat sink module and N optical path unit, and wherein N is more than or equal to 2 positive integer; A described N optical path unit is followed successively by the first optical path unit to the N optical path unit;
Each optical path unit comprises auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band;
It is step-like that the one side of described heat sink module is N+1 level, is followed successively by from low to high first order step to the N+1 level step;
On described first order step, be provided with N-1 lens mount;
Fast axis collimation lens in each optical path unit is separately fixed at the front end of the CoS of optical path unit self, and the front end of described CoS is that one end of CoS output beam;
In a described N optical path unit, CoS in CoS to the N optical path unit in the first optical path unit is fixed on respectively on step to the N+1 level step of the second level successively, slow axis collimating lens in the first optical path unit is directly fixed on first order step, and the slow axis collimating lens in the second optical path unit to the N optical path unit is fixed on respectively on different lens mounts successively;
Each lens mount is made up of two columns that keep at a certain distance away and highly equate, and described two columns are separately positioned on the both sides of the output beam of the CoS in each optical path unit;
The optical axis of the optical axis of the output beam of the CoS in each optical path unit, the optical axis of fast axis collimation lens and slow axis collimating lens is on same straight line;
The output beam of CoS in each optical path unit is only by the slow axis collimating lens of optical path unit self;
The optical axis of the output beam of the CoS in a described N optical path unit is all in same vertical plane and be parallel to each other.
2. vertical stack formula light path module according to claim 1, is characterized in that, in described heat sink module, is provided with at least two counterbores, for described vertical stack formula light path module being fixed to the step base plate of multi-die semiconductor laser;
Described heat sink module is from step to the N+1 level step of the second level, and the edge of every grade of step is all provided with a side strip, and the CoS in each optical path unit is located and is fixed on step by side strip.
3. vertical stack formula light path module according to claim 2, is characterized in that, in the time that N equals 2, described vertical stack formula light path module comprises two optical path units, is respectively the first optical path unit and the second optical path unit;
The one side of described heat sink module be three grades step-like, be respectively first order step, second level stage and third level step;
On the first order step of described heat sink module, be provided with a lens mount;
In described heat sink module, be provided with two counterbores, be respectively the first counterbore and the second counterbore; Described the first counterbore, between described lens mount and described second level step, and is arranged on first order step; Described second counterbore is arranged on third level step;
CoS in described the first optical path unit is fixed on the step of the second level, and slow axis collimating lens is directly fixed on described first order step;
CoS in described the second optical path unit is fixed on third level step, and slow axis collimating lens is fixed on lens mount;
Between the slow axis collimating lens of described lens mount in described the first counterbore and described the first optical path unit;
Described lens mount is higher than second level step, described lens mount is lower than third level step, the below of the slow axis collimating lens for the output beam of the CoS of the first optical path unit from described the second optical path unit is passed through, and the top of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from described the first optical path unit is passed through.
4. vertical stack formula light path module according to claim 2, it is characterized in that, in the time that N is greater than 2, along the direction of propagation of the output beam of described CoS, set gradually respectively a described N-1 lens mount, a described N-1 lens mount is respectively N-1 lens mount to first lens frame, and successively decreases highly gradually;
In described vertical stack formula light path module, the difference in height of adjacent two CoS equates.
5. vertical stack formula light path module according to claim 4, is characterized in that,
In the time that N equals 3, described vertical stack formula light path module comprises three optical path units, is respectively the first optical path unit, the second optical path unit and the 3rd optical path unit;
On described first order step, be provided with two lens mounts, be respectively first lens frame and the second lens mount, first lens frame is lower than in the second lens mount;
It is step-like that the one side of described heat sink module is level Four, is respectively first order step, second level stage, third level step and fourth stage step;
CoS in described the first optical path unit is fixed on the step of the second level, and slow axis collimating lens is directly fixed on described first order step;
CoS in described the second optical path unit is fixed on third level step, and slow axis collimating lens is fixed on described first lens frame;
CoS in described the 3rd optical path unit is fixed on fourth stage step, and slow axis collimating lens is fixed on described the second lens mount;
Between the slow axis collimating lens of first lens chord position in described the second lens mount and described the first optical path unit;
Described second level step is lower than described first lens frame, described third level step is lower than described the second lens mount, described third level step is higher than described first lens frame, described fourth stage step is higher than described the second lens mount, the below of the slow axis collimating lens for the output beam of the CoS of the first optical path unit from described the second optical path unit is passed through, the below of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from described the 3rd optical path unit is passed through, the top of the slow axis collimating lens of the output beam of the CoS in the second optical path unit from described the first optical path unit is passed through, the top of the slow axis collimating lens of the output beam of the CoS in the 3rd optical path unit from described the second optical path unit is passed through,
In described heat sink module, be provided with two counterbores, be respectively the first counterbore and the second counterbore, described the first counterbore, between described the second lens mount and described second level step, and is arranged on first order step, and described second counterbore is arranged on fourth stage step.
6. according to arbitrary described vertical stack formula light path module in claim 1-5, it is characterized in that, described vertical stack formula light path module also comprises one or more in Volume Bragg grating, thermistor and counnter attack sheet; Described heat sink module adopts high thermal conductivity metal to make.
7. a multi-die semiconductor laser, is characterized in that, comprising: step base plate and multiple as the vertical stack formula light path module as described in arbitrary in claim 3-5;
Multiple vertical stack formula light path modules are separately fixed on the different steps of step base plate, on each step that is fixed with vertical stack formula light path module, are provided with at least two fixing holes, for fixed vertical laminated type light path module.
8. multi-die semiconductor laser according to claim 7, is characterized in that, described step base plate adopts high thermal conductivity metal to make.
9. multi-die semiconductor laser according to claim 7, is characterized in that,
On described each step that is fixed with vertical stack formula light path module, be provided with two fixing holes, described two fixing holes are all screwed hole; Two counterbores in each vertical stack formula light path module are corresponding with the position of two fixing holes on each step that is fixed with vertical stack formula light path module;
Described multiple vertical stack formula light path module is fixed on the step of step base plate in the mode being threaded respectively;
In described step base plate, the difference in height of adjacent two steps equates;
In each vertical stack formula light path module the difference in height of adjacent two CoS be the difference in height of adjacent two steps in described step base plate m doubly, wherein m is more than or equal to 2 positive integer.
10. multi-die semiconductor laser according to claim 9, is characterized in that, described multi-die semiconductor laser also comprises: multiple speculums, a coupling mirror and a coupled fiber;
Each vertical stack formula light path module is corresponding with n speculum, and wherein n equals the number of CoS in each vertical stack formula light path module;
N corresponding speculum of each vertical stack formula light path module is vertically fixed on respectively on the step at corresponding vertical stack formula light path module place successively along the direction of propagation of the output beam of CoS in corresponding vertical stack formula light path module, and the height of a described n speculum increases gradually, for the output beam of the CoS in the each optical path unit of described corresponding vertical stack formula light path module being reflexed to the plane of incidence of coupling mirror;
Described coupled fiber is positioned at a side at the exit facet place of described coupling mirror, and the axis of described coupling mirror and the axis of described coupled fiber are located along the same line.
CN201410327837.7A 2014-07-10 2014-07-10 Vertical laminated optical path module and multi-die semiconductor laser Pending CN104112978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410327837.7A CN104112978A (en) 2014-07-10 2014-07-10 Vertical laminated optical path module and multi-die semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410327837.7A CN104112978A (en) 2014-07-10 2014-07-10 Vertical laminated optical path module and multi-die semiconductor laser

Publications (1)

Publication Number Publication Date
CN104112978A true CN104112978A (en) 2014-10-22

Family

ID=51709669

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410327837.7A Pending CN104112978A (en) 2014-07-10 2014-07-10 Vertical laminated optical path module and multi-die semiconductor laser

Country Status (1)

Country Link
CN (1) CN104112978A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514794A (en) * 2016-01-11 2016-04-20 北京凯普林光电科技股份有限公司 Semiconductor laser
CN106451062A (en) * 2016-09-20 2017-02-22 长春理工大学 High-power semiconductor laser chip conductive heat dissipation package heat sink
CN109586162A (en) * 2018-07-04 2019-04-05 深圳朗光科技有限公司 More single tube optical fiber coupling packaging structure for high-power semi-conductor laser and laser
CN113258448A (en) * 2021-07-14 2021-08-13 北京凯普林光电科技股份有限公司 Optical fiber coupling structure of multi-single-tube semiconductor laser

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6240116B1 (en) * 1997-08-14 2001-05-29 Sdl, Inc. Laser diode array assemblies with optimized brightness conservation
US20050063433A1 (en) * 2003-09-20 2005-03-24 Hans-Georg Treusch Stepped manifold array of microchannel heat sinks
CN101071936A (en) * 2005-11-22 2007-11-14 恩耐激光技术有限公司 Modular assembly utilizing laser diode subassemblies with winged mounting blocks
US7733932B2 (en) * 2008-03-28 2010-06-08 Victor Faybishenko Laser diode assemblies
CN102646922A (en) * 2012-04-26 2012-08-22 无锡亮源激光技术有限公司 Tandem type semiconductor laser with circuit board
CN203951037U (en) * 2014-07-10 2014-11-19 北京凯普林光电科技有限公司 A kind of vertical stack formula light path module and a kind of multi-die semiconductor laser

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6240116B1 (en) * 1997-08-14 2001-05-29 Sdl, Inc. Laser diode array assemblies with optimized brightness conservation
US20050063433A1 (en) * 2003-09-20 2005-03-24 Hans-Georg Treusch Stepped manifold array of microchannel heat sinks
CN101071936A (en) * 2005-11-22 2007-11-14 恩耐激光技术有限公司 Modular assembly utilizing laser diode subassemblies with winged mounting blocks
US7733932B2 (en) * 2008-03-28 2010-06-08 Victor Faybishenko Laser diode assemblies
CN102646922A (en) * 2012-04-26 2012-08-22 无锡亮源激光技术有限公司 Tandem type semiconductor laser with circuit board
CN203951037U (en) * 2014-07-10 2014-11-19 北京凯普林光电科技有限公司 A kind of vertical stack formula light path module and a kind of multi-die semiconductor laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514794A (en) * 2016-01-11 2016-04-20 北京凯普林光电科技股份有限公司 Semiconductor laser
WO2017121000A1 (en) * 2016-01-11 2017-07-20 北京凯普林光电科技股份有限公司 Semiconductor laser
US10310278B2 (en) 2016-01-11 2019-06-04 BWT Beijing Ltd. Semiconductor laser
CN106451062A (en) * 2016-09-20 2017-02-22 长春理工大学 High-power semiconductor laser chip conductive heat dissipation package heat sink
CN109586162A (en) * 2018-07-04 2019-04-05 深圳朗光科技有限公司 More single tube optical fiber coupling packaging structure for high-power semi-conductor laser and laser
CN109586162B (en) * 2018-07-04 2020-05-05 深圳朗光科技有限公司 Optical fiber coupling packaging structure of multi-single-tube high-power semiconductor laser and laser
CN113258448A (en) * 2021-07-14 2021-08-13 北京凯普林光电科技股份有限公司 Optical fiber coupling structure of multi-single-tube semiconductor laser

Similar Documents

Publication Publication Date Title
US10310278B2 (en) Semiconductor laser
CN104112978A (en) Vertical laminated optical path module and multi-die semiconductor laser
CN204905644U (en) Laser coupled system
CN102255238B (en) Packaging structure of semiconductor laser device and application device thereof
CN104112980A (en) Staggerly-laminated optical path module and multi-die semiconductor laser
CN203951037U (en) A kind of vertical stack formula light path module and a kind of multi-die semiconductor laser
CN101434005B (en) Multichannel amorphous silicon solar energy plate laser film-engraving machine
CN103944067B (en) A kind of high-power semiconductor laser closes beam system
CN104112979A (en) Single-chip optical path module and multi-die semiconductor laser
CN104020566B (en) The extensive laser beam array duty cycle adjustment device of two dimension
CN107275920A (en) A kind of semiconductor laser slow axis collimation clamp assembly and its application process
CN203909406U (en) Polarization beam-combining device of semiconductor laser
CN1952754A (en) Back light module
CN102004320A (en) High-power semiconductor laser array fast and slow axis beam quality homogenization device
CN203951036U (en) A kind of dislocation laminated type light path module and a kind of multi-die semiconductor laser
CN203398519U (en) Inclined-surface type multi-diode semiconductor laser coupling device
CN202582545U (en) Wide-angle linear light spot laser
CN204349212U (en) A kind of high-power semiconductor laser fiber coupling system
CN204349210U (en) A kind of fiber coupled laser diode
CN103293694A (en) Multiple semiconductor laser beam combining system
CN103944068A (en) Beam combining device for high-power semiconductor laser
CN103048789B (en) Optical system producing long-distance light with similar non-diffraction grating type linear structure
CN106334873B (en) Laser processing unit for solar battery sheet laser ablation machine
CN204694920U (en) A kind of luminous point of semiconductor laser rotates solid matter apparatus for shaping
CN201820035U (en) Light beam quality uniformization device for fast and slow shafts of large-power semiconductor laser array

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 100070 Fengtai District science and Technology Park, Feng Feng Road, No. 4, a layer of 5

Applicant after: BWT BEIJING LTD.

Address before: 100070 Fengtai District science and Technology Park, Feng Feng Road, No. 4, a layer of 5

Applicant before: BWT Beijing Ltd.

COR Change of bibliographic data
RJ01 Rejection of invention patent application after publication

Application publication date: 20141022

RJ01 Rejection of invention patent application after publication