CN104112979A - Single-chip optical path module and multi-die semiconductor laser - Google Patents
Single-chip optical path module and multi-die semiconductor laser Download PDFInfo
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- CN104112979A CN104112979A CN201410327905.XA CN201410327905A CN104112979A CN 104112979 A CN104112979 A CN 104112979A CN 201410327905 A CN201410327905 A CN 201410327905A CN 104112979 A CN104112979 A CN 104112979A
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Abstract
The invention relates to the technical field of laser, and particularly relates to a single-chip optical path module and a multi-die semiconductor laser. The single-chip optical path module comprises a heat sink module, a semiconductor laser chip CoS with auxiliary heat sink, a fast axis collimating lens and a slow axis collimating lens. The CoS, the fast axis collimating lens and the slow axis collimating lens are sequentially fixed on one surface of the heat sink module; and the optical axis of the output beam of the CoS, and the optical axis of the fast axis collimating lens and the optical axis of the slow axis collimating lens are in the same line. The multi-die semiconductor laser comprises a step-shaped bottom board and the plurality of single-chip optical path modules, wherein the plurality of single-chip optical path module are fixed to the different steps of the step-shaped bottom board respectively. According to the single-chip optical path modules and the multi-die semiconductor laser, modularization of a plurality of single-chip optical paths are realized; in the multi-die semiconductor laser, the single-chip optical path modules can be fixed in a detachable manner, so that different lasers are allowed to use one type of module; and process repeatability and stability are improved.
Description
Technical field
The present invention relates to laser technology field, relate in particular to a kind of single-chip light path module and a kind of multi-die semiconductor laser.
Background technology
In current multi-die semiconductor laser, conventionally auxiliary all bands heat sink semiconductor laser chip (CoS) is welded on same base plate by brazing metal, then fixing optical element on base plate, single light path is collimated, in the other end fixation reflex unit of base plate, every collimated light beam is turned to, and then scioptics focus on coupling in the lump.Because CoS is welded on base plate, if certain breaks down, just need to again change, and base plate is to adopt the metal of high thermal conductivity to make, change in the process of CoS, can affect other unit component, need to again carry out adjustment to them, this all unit components are the space integration mode of base plate altogether, due to detachably poor, cause the versatility of unit component poor, and can not ensure process repeatability and the stability of different chip products, expended a large amount of material resources and manpower.
Summary of the invention
The technical problem existing for above-mentioned prior art, the invention provides a kind of single-chip light path module, the present invention also aims to provide a kind of multi-die semiconductor laser.
The invention discloses a kind of single-chip light path module, comprising: a heat sink module, auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band;
Described CoS, fast axis collimation lens and slow axis collimating lens are fixed on same of described heat sink module successively;
The optical axis of the optical axis of the output beam of described CoS and the optical axis of fast axis collimation lens and slow axis collimating lens is on same straight line.
Optionally, the one side that is fixed with described CoS, fast axis collimation lens and slow axis collimating lens of described heat sink module be three grades step-like, be respectively one-level step, two stage steps and three grades of steps;
Described one-level step is higher than described two stage steps, and described two stage steps is higher than described three grades of steps;
Described CoS is fixed on one-level step;
Described fast axis collimation lens is fixed in two stage steps;
Described slow axis collimating lens is fixed on three grades of steps.
Optionally, a side of described one-level step is provided with a side strip, and described CoS is fixed on described one-level step by this side strip location;
Described fast axis collimation lens is fixed on the position of the front end of the close CoS in two stage steps, and the front end of described CoS is that one end of CoS output beam.
Optionally, on described one-level step He in two stage steps, be respectively provided with a shoulder hole, for described single-chip light path module being fixed to the step base plate of multi-die semiconductor laser;
Described shoulder hole is divided into the different two parts in aperture, and the major part in aperture is positioned at heat sink module and is three grades of step-like one sides, and the little part in aperture is positioned at the another side of heat sink module;
Shoulder hole in described two stage steps is near the border of one-level step and two stage steps.
Optionally, the one side that is fixed with described CoS, fast axis collimation lens and slow axis collimating lens of described heat sink module is plane, one end of heat sink module and middle part are respectively provided with a shoulder hole, for described single-chip light path module being fixed to the step base plate of multi-die semiconductor laser;
Described shoulder hole is divided into the different two parts in aperture, and the large part in aperture is positioned at the one side that is fixed with described CoS, fast axis collimation lens and slow axis collimating lens, and the little part in aperture is positioned at the another side of heat sink module, hole;
Between two shoulder holes, be provided with a side strip, described CoS is located and is fixed in heat sink module by side strip;
Described fast axis collimation lens is fixed on the front end of CoS, and the front end of described CoS is that one end of CoS output beam.
Optionally, single-chip light path module also comprises the Volume Bragg grating and/or the thermistor that are fixed in described heat sink module, is provided with the side strip of the fixing described Volume Bragg grating in location and/or thermistor in described heat sink module.
Optionally, described heat sink module adopts high thermal conductivity metal to make.
The invention also discloses a kind of multi-die semiconductor laser, comprising: step base plate and multiple described single-chip light path module; Multiple single-chip light path modules are separately fixed on the different steps of step base plate.
Optionally, described step base plate adopts high thermal conductivity metal to make;
On described each step that is fixed with single-chip light path module, be provided with two fixing holes, and two described fixing holes are all screwed hole, for fixing single-chip light path module;
Two shoulder holes in each single-chip light path module are corresponding with the position of two fixing holes on each step that is fixed with single-chip light path module;
Described multiple single-chip light path module is fixed on the different steps of step base plate in the mode being threaded respectively.
Optionally, multi-die semiconductor laser also comprises: multiple speculums, a coupling mirror and a coupled fiber;
Multiple speculums and multiple single-chip light path module are corresponding one by one;
Each speculum is positioned at a side of fixing slow axis collimating lens place in corresponding single-chip light path module, and be vertically fixed on the step at described corresponding single-chip light path module place, for the output beam of the CoS in described corresponding single-chip light path module being reflexed to the plane of incidence of coupling mirror;
Described coupled fiber is positioned at a side at the exit facet place of described coupling mirror, and the axis of described coupling mirror and the axis of described coupled fiber are located along the same line.
Compared with prior art, technique effect of the present invention is:
The present invention, by single CoS, single fast axis collimation lens and single slow axis collimating lens are integrated in same heat sink module, forms independently semiconductor laser unit device, i.e. a single-chip light path module.Single-chip light path module is independent of laser shell and base plate, can have production line of one's own, realize continuous productive process, thereby solve different multi-chip laser product component versatility problems, realize the mass production of multi-chip laser, reduced the cost of product in development and production process.
Because single-chip light path module is arranged in multi-die semiconductor laser by dismountable mode, if certain CoS in device breaks down, can, by changing single-chip light path module, simplify the complexity of doing over again, reprocessing, save time and cost.This single-chip light path reasonable module design, compact conformation, has realized the modularization of single-chip light path, can ensure very high process repeatability and stability debuging in process, has simplified workman's operation, improving production efficiency.Compare with the Coupling device of automation, debuging of single-chip light path module possesses more flexibility, higher than automation equipment coupling efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the single-chip light path module embodiment mono-in the present invention;
Fig. 2 is the structural representation of the single-chip light path module embodiment bis-in the present invention;
Fig. 3 is the structural representation of step base plate in the multi-die semiconductor laser in the embodiment of the present invention;
Fig. 4 is the structural representation of the multi-die semiconductor laser in the embodiment of the present invention;
In figure: heat sink module 11,21; The auxiliary heat sink semiconductor laser chip CoS12,22 of band; Fast axis collimation lens 13,23; Slow axis collimating lens 14,24; Shoulder hole 15,25; One-level step 16; Two stage steps 17; Three grades of steps 18; Side strip 19,29; Step base plate 31; Fixing hole 32; Speculum 41; Coupling mirror 42; Coupled fiber 43; Single-chip light path module 100,200.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The present invention is by the modularization respectively of the multiple semiconductor laser unit devices in multi-die semiconductor laser, form multiple single-chip light path modules, single-chip light path module is also fixed on the step base plate of multi-die semiconductor laser removably, thereby different multi-chip laser product component versatility problems are solved, and simplify the program of doing over again, reprocessing, saved time and cost.
Single-chip light path module embodiment mono-
Fig. 1 is the structural representation of the single-chip light path module embodiment mono-in the present invention.As shown in Figure 1, this embodiment discloses a kind of single-chip light path module 100, comprises a heat sink module 11, auxiliary heat sink semiconductor laser chip CoS12, a fast axis collimation lens 13 and a slow axis collimating lens 14 of band.CoS12, fast axis collimation lens 13 and slow axis collimating lens 14 are fixed on same of heat sink module 11 successively; The optical axis of the optical axis of the optical axis of the output beam of CoS12 and fast axis collimation lens 13 and slow axis collimating lens 14, on same straight line, can be avoided differing from axle introducing optics of optical element like this, causes beam quality to decline, and affects follow-up coupling efficiency.
The entirety of heat sink module 11 is strip, the side that is fixed with CoS12, fast axis collimation lens 13 and slow axis collimating lens 14 of heat sink module 11 be three grades step-like, be respectively one-level step 16, two stage steps 17, three grades of steps 18, one-level step 16 is higher than two stage steps 17, two stage steps 17 is higher than three grades of steps 18, the installation that can facilitate optical element is set like this, and be conducive to heat radiation, the location positioning that the width on every stage rank can be installed according to the physical dimension of each optical element and they in heat sink module.
In one-level step 16 and two stage steps 17, be respectively provided with a shoulder hole 15, for single-chip light path module 100 being fixed to the step base plate of multi-die semiconductor laser.Each shoulder hole 15 is divided into the different two parts in aperture, the large part in aperture is positioned at the one side that is fixed with CoS12, fast axis collimation lens 13 and slow axis collimating lens 14 of heat sink module 11, the little part in aperture is positioned at the another side of heat sink module 11, for single-chip light path module 100 is fixed to the step base plate of multi-die semiconductor laser by screw, like this single-chip light path module 100 is fixed to after multi-die semiconductor laser, the head of screw will sink in shoulder hole 15 completely, avoid screw protruding in ledge surface, block the light beam of CoS12 output.
Shoulder hole in two stage steps 17 is near the border of one-level step 16 and two stage steps 17, a side of one-level step 16 is provided with a side strip 19, side strip is the projection of strip, CoS12 is fixed on described one-level step 16 by these side strip 19 location, be CoS12 location and installation on one-level step 16, a side and the side strip 19 of CoS12 are fitted; The front end of CoS12, that one end of CoS12 output beam flushes with the border of one-level step 16 and two stage steps 17.In order to ensure good heat conduction, CoS12 available metal scolder and heat sink module 11 are sintered to fix.By micropositioning stage by fast axis collimation lens 13, be arranged on the position of the front end of close CoS12 in two stage steps 17, here the front end of CoS12 is that one end of CoS12 output beam, the output beam of CoS12 is collimated at quick shaft direction, by checking the facula position in far field and the collimation that size is observed quick shaft direction thereof, reach after requirement, then with glue, fast axis collimation lens 13 is fixed.Slow axis collimating lens 14 is fixed on three grades of steps 18.Can slow axis collimating lens 14 be installed on three grades of steps 18 by micropositioning stage, the output beam of CoS12 is collimated at slow-axis direction, when collimation reaches after requirement, slow axis collimating lens 14 is fixed with glue.
Single-chip light path module embodiment bis-
Fig. 2 is the structural representation of the single-chip light path module embodiment bis-in the present invention.As shown in Figure 2, this embodiment discloses a kind of single-chip light path module 200, comprises a heat sink module 21, auxiliary heat sink semiconductor laser chip CoS22, a fast axis collimation lens 23 and a slow axis collimating lens 24 of band.CoS22, fast axis collimation lens 23 and fast axis collimation lens 24 be fixed on successively same of heat sink module 21 upper, the optical axis of the optical axis of the output beam of CoS22 and fast axis collimation lens 23 and the optical axis of slow axis collimating lens 24 are on same straight line.
The entirety of heat sink module 21 is strip, and be fixed with CoS22, fast axis collimation lens 23 and slow axis collimating lens 24 sides of heat sink module 21 are plane.
One end of heat sink module 21 and middle part are respectively provided with a shoulder hole 25, for single-chip light path module 200 is fixed to multi-die semiconductor laser.Each shoulder hole 25 is divided into the different two parts in aperture, and the large part in aperture is positioned at the one side that is fixed with described CoS22, fast axis collimation lens 23 and slow axis collimating lens 24, and the little part in aperture is positioned at the another side of heat sink module 21; The effect of shoulder hole 25 is identical with the effect of shoulder hole in embodiment mono-.
Between two shoulder holes 25, be provided with a side strip 29, CoS22 is fixed in heat sink module 21 by 29 location of side; In order to ensure good heat conduction, CoS22 available metal scolder and heat sink module 21 are sintered to fix.
Fast axis collimation lens 23 is fixed on the front end of CoS22, and the front end of CoS22 is that one end of CoS22 output beam.Fast axis collimation lens 23 and slow axis collimating lens 24 are installed fixing mode and are implemented identical in one.
At embodiment mono-with in implementing two, in order to ensure good thermal diffusivity, heat sink module can adopt high thermal conductivity metal to make, for example: copper.One or both in heat sink module in all right fixed body Bragg grating, thermistor, and in heat sink module, be provided with the side strip of locating fixing above-mentioned optical element.
Further specifically describe below the embodiment of the multi-die semiconductor laser that comprises three single-chip light path modules.
Multi-die semiconductor laser embodiment
Fig. 3 is the structural representation of step base plate in the multi-die semiconductor laser in the embodiment of the present invention; Fig. 4 is the structural representation of the multi-die semiconductor laser in the embodiment of the present invention.As shown in Figures 3 and 4, this enforcement discloses a kind of multi-die semiconductor laser, comprising: the single-chip light path module 100 in step base plate 31 and three embodiment mono-.Three single-chip light path modules 100 are fixed on the step of step base plate in the mode being threaded respectively, are screwed on the different steps of step base plate 31; On each step that is fixed with single-chip light path module 100, being provided with 32, two fixing holes of two fixing holes 32 is screwed hole, for fixing single-chip light path module 100.Two shoulder holes 15 in each single-chip light path module 100 are corresponding with the position of two fixing holes 32 on each step that is fixed with single-chip light path module 100.By such setting, realize the modularization of unit component in multi-die semiconductor laser and by the detachability of single-chip light path module, solved different multi-chip laser product component versatility problems.
This multi-die semiconductor laser, also comprises: three speculums 41, coupling mirror 42 and a coupled fiber 43, three speculums 41 and three single-chip light path modules 100 are corresponding one by one, each speculum 41 is positioned at that side that is fixed with slow axis collimating lens in corresponding single-chip light path module, and be vertically fixed on the step at single-chip light path module 100 places corresponding with it, the reflecting surface of each speculum is 45 ° with the angle that the straight line at the optical axis of fast axis collimation lens in the single-chip light path module of answering in contrast and the optical axis place of slow axis collimating lens becomes, for the output beam of the CoS in the single-chip light path module corresponding with it being reflexed to the plane of incidence of coupling mirror 42, and the output beam of the CoS in three single-chip light path modules 100 is reflexed to the plane of incidence of coupling mirror 42 with same direction and parallel mode.
Coupling mirror 42 is fixed on the step of step base plate 31 bottoms, and coupled fiber 43 is positioned at that side of the exit facet of coupling mirror 42, and the axis of the axis of coupling mirror 42 and coupled fiber 43 is located along the same line.
Reflex to the collimated light beam of the plane of incidence of coupling mirror 42, after converging finally by coupling mirror 42, be coupled into coupled fiber 43.
In an alternative embodiment of the invention, the step base plate of multi-die semiconductor laser also can design the height of step and the position of fixing hole in step base plate according to the concrete size of the single-chip light path module 200 in embodiment bis-, and the multiple single-chip light path modules 200 in embodiment bis-are fixedly mounted on respectively on step, be assembled into multi-die semiconductor laser.
In order to ensure good thermal diffusivity, step base plate 31 can adopt high thermal conductivity metal to make, for example: copper.
In the present invention, in step base plate, the quantity for the step of fixing single-chip light path module is determined by the power output of single CoS and the gross power of multi-die semiconductor laser.
Single-chip light path module in the present invention can also be fixed on the step base plate of multi-die semiconductor laser by the mode of welding.
In sum, the present invention, by a CoS, a fast axis collimation lens and a slow axis collimating lens are integrated in same heat sink module, forms a single-chip light path module.Single-chip light path modular structure and rationally distributed, realized the modularization of single-chip collimated light path, process repeatability and the stability that in assembling and debug process, can ensure, simplified workman's operation, improve production efficiency, solved different multi-chip laser product component versatility problems.
In multi-die semiconductor laser, single-chip light path module is fixed by dismountable mode, if certain CoS in device breaks down, can, by changing single-chip light path module, simplify the program of doing over again, reprocessing, and saves time and cost.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.All any amendments of doing within the spirit and principles in the present invention, be equal to replacement, improvement etc., be all included in protection scope of the present invention.
Claims (10)
1. a single-chip light path module, is characterized in that, comprising: a heat sink module, auxiliary heat sink semiconductor laser chip CoS, a fast axis collimation lens and a slow axis collimating lens of band;
Described CoS, fast axis collimation lens and slow axis collimating lens are fixed on same of described heat sink module successively;
The optical axis of the optical axis of the output beam of described CoS and the optical axis of fast axis collimation lens and slow axis collimating lens is on same straight line.
2. single-chip light path module according to claim 1, is characterized in that,
The one side that is fixed with described CoS, fast axis collimation lens and slow axis collimating lens of described heat sink module be three grades step-like, be respectively one-level step, two stage steps and three grades of steps;
Described one-level step is higher than described two stage steps, and described two stage steps is higher than described three grades of steps;
Described CoS is fixed on one-level step;
Described fast axis collimation lens is fixed in two stage steps;
Described slow axis collimating lens is fixed on three grades of steps.
3. single-chip light path module according to claim 2, is characterized in that,
A side of described one-level step is provided with a side strip, and described CoS is fixed on described one-level step by this side strip location;
Described fast axis collimation lens is fixed on the position of the front end of the close CoS in two stage steps, and the front end of described CoS is that one end of CoS output beam.
4. single-chip light path module according to claim 3, is characterized in that,
On described one-level step He in two stage steps, be respectively provided with a shoulder hole, for described single-chip light path module being fixed to the step base plate of multi-die semiconductor laser;
Described shoulder hole is divided into the different two parts in aperture, and the major part in aperture is positioned at heat sink module and is three grades of step-like one sides, and the little part in aperture is positioned at the another side of heat sink module;
Shoulder hole in described two stage steps is near the border of one-level step and two stage steps.
5. single-chip light path module according to claim 1, it is characterized in that, the one side that is fixed with described CoS, fast axis collimation lens and slow axis collimating lens of described heat sink module is plane, one end of heat sink module and middle part are respectively provided with a shoulder hole, for described single-chip light path module being fixed to the step base plate of multi-die semiconductor laser;
Described shoulder hole is divided into the different two parts in aperture, and the large part in aperture is positioned at the one side that is fixed with described CoS, fast axis collimation lens and slow axis collimating lens, and the little part in aperture is positioned at the another side of heat sink module, hole;
Between two shoulder holes, be provided with a side strip, described CoS is located and is fixed in heat sink module by side strip;
Described fast axis collimation lens is fixed on the front end of CoS, and the front end of described CoS is that one end of CoS output beam.
6. according to arbitrary described single-chip light path module in claim 1-5, it is characterized in that, single-chip light path module also comprises one or more in Volume Bragg grating, thermistor, counnter attack sheet, is provided with one or more the side strip in the fixing described Volume Bragg grating in location, thermistor, counnter attack sheet in described heat sink module.
7. according to arbitrary described single-chip light path module in claim 1-5, it is characterized in that, described heat sink module adopts high thermal conductivity metal to make.
8. a multi-die semiconductor laser, is characterized in that, comprising: step base plate and multiple single-chip light path module described in claim 4 or 5; Multiple single-chip light path modules are separately fixed on the different steps of step base plate.
9. multi-die semiconductor laser according to claim 8, is characterized in that, described step base plate adopts high thermal conductivity metal to make;
On described each step that is fixed with single-chip light path module, be provided with two fixing holes, and two described fixing holes are all screwed hole, for fixing single-chip light path module;
Two shoulder holes in each single-chip light path module are corresponding with the position of two fixing holes on each step that is fixed with single-chip light path module;
Described multiple single-chip light path module is fixed on the different steps of step base plate in the mode being threaded respectively.
10. multi-die semiconductor laser according to claim 9, is characterized in that, also comprises: multiple speculums, a coupling mirror and a coupled fiber;
Multiple speculums and multiple single-chip light path module are corresponding one by one;
Each speculum is positioned at a side of fixing slow axis collimating lens place in corresponding single-chip light path module, and be vertically fixed on the step at described corresponding single-chip light path module place, for the output beam of the CoS in described corresponding single-chip light path module being reflexed to the plane of incidence of coupling mirror;
Described coupled fiber is positioned at a side at the exit facet place of described coupling mirror, and the axis of described coupling mirror and the axis of described coupled fiber are located along the same line.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104538845A (en) * | 2014-12-30 | 2015-04-22 | 深圳市博锐浦科技有限公司 | Multi-single-tube-semiconductor laser optical fiber coupling packaging device |
| CN104767118A (en) * | 2015-01-22 | 2015-07-08 | 北京凯普林光电科技有限公司 | Optical fiber coupling semiconductor laser device |
| CN106451062A (en) * | 2016-09-20 | 2017-02-22 | 长春理工大学 | High-power semiconductor laser chip conductive heat dissipation package heat sink |
| CN110429465A (en) * | 2019-07-03 | 2019-11-08 | 江苏天元激光科技有限公司 | A kind of semiconductor laser hierarchic structure is heat sink |
| CN110429472A (en) * | 2019-09-10 | 2019-11-08 | 微源光子(深圳)科技有限公司 | A kind of high-power dual output exocoel narrow linewidth laser of easy volume production |
| CN110932086A (en) * | 2019-12-05 | 2020-03-27 | 北京凯普林光电科技股份有限公司 | Semiconductor laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538845A (en) * | 2014-12-30 | 2015-04-22 | 深圳市博锐浦科技有限公司 | Multi-single-tube-semiconductor laser optical fiber coupling packaging device |
| CN104767118A (en) * | 2015-01-22 | 2015-07-08 | 北京凯普林光电科技有限公司 | Optical fiber coupling semiconductor laser device |
| CN106451062A (en) * | 2016-09-20 | 2017-02-22 | 长春理工大学 | High-power semiconductor laser chip conductive heat dissipation package heat sink |
| CN110429465A (en) * | 2019-07-03 | 2019-11-08 | 江苏天元激光科技有限公司 | A kind of semiconductor laser hierarchic structure is heat sink |
| CN110429472A (en) * | 2019-09-10 | 2019-11-08 | 微源光子(深圳)科技有限公司 | A kind of high-power dual output exocoel narrow linewidth laser of easy volume production |
| CN110932086A (en) * | 2019-12-05 | 2020-03-27 | 北京凯普林光电科技股份有限公司 | Semiconductor laser |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141022 |
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| RJ01 | Rejection of invention patent application after publication |