CN204758260U - Semiconductor laser structure of multitube core characteristic monitoring - Google Patents
Semiconductor laser structure of multitube core characteristic monitoring Download PDFInfo
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- CN204758260U CN204758260U CN201520535792.2U CN201520535792U CN204758260U CN 204758260 U CN204758260 U CN 204758260U CN 201520535792 U CN201520535792 U CN 201520535792U CN 204758260 U CN204758260 U CN 204758260U
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Abstract
The utility model provides a semiconductor laser structure of multitube core characteristic monitoring installs many laser instruments on same heat sink bottom plate, and the light -emitting direction homogeneous of laser instrument is sent, and every laser instrument corresponds independent optical unit all the way, and this unit includes fast axis collimator, slow axis collimating mirror, PD speculum, from the light beam of laser emitting through fast axis collimator and slow axis collimating mirror collimation accurate beam with chenging, on accurate beam behind the collimation incides the PD speculum, through the PD speculum gather correspond the laser instrument characteristic of unit, the while through the PD speculum will many laser emittings accurate parallel light close bundle, close shuguang and assemble couplingout on the fiber end face that forms images by focusing lens. This structure uses the light beam that the PD speculum will many laser instruments to close the power collection of restrainting and accomplishing each laser instrument, has removed the restriction that can not monitor a plurality of different laser instruments among traditional technical scheme simultaneously, has reduced the mutual interference between the laser instrument, has reduced the use kind of material, is guaranteeing when it restraints efficiency to obtain good closing the still accurate inside circumstances of laser instrument of having monitored.
Description
Technical field
The utility model relates to a kind of monitoring of structures of semiconductor laser beam, particularly relates to a kind of structure of simultaneously monitoring multiple semiconductor laser beam.
Background technology
In industry, medical science and scientific research field, use the laser such as 400 ~ 1550nm as work light widely, these light often need high power CW to export use, especially the light source that simultaneously works of multi-wavelength, in the process used cannot the photoelectric parameter of test job light source again as power, wavelength etc., and need the mutual interference avoided between different wave length during test, so need the monitoring of structures of the laser output condition provided in the work of an energy Real-Time Monitoring.
Traditional technical scheme installs sensitive detection parts at the light-emitting area back side of chip of laser, gathers, and cannot gather multiple chip of laser simultaneously to the photoelectric characteristic of laser instrument.In this scheme, the corresponding same detector of branched laser instrument, the part that the only laser instrument collected output light spills or the surround lighting that the diffuse reflection of laser enclosure inwall is returned, light beam does not have directivity; The test number of this surround lighting can form nonlinearities change according to the number change of laser instrument, and the sensitive detection parts that the laser instrument of different wave length needs multiple different wave length to respond, or sensitive detection parts front end adds the color filter of different wave length; The accuracy gathered can be subject to the impact between different wave length light beam, so the monitoring laser instrument being difficult to long-time stable exports situation, and production technology is more complicated.
Summary of the invention
The purpose of this utility model is to provide the semiconductor laser structure of a kind of Multi-core characteristic monitoring, this structure makes multiple laser light beam be obtained for collimation at fast axle and slow-axis direction, the monitoring to laser instrument is completed while pooling the parallel beam that is as the criterion, relieve single detector in conventional solution and monitor the restriction that nonlinear restriction and different wave length disturb mutually, reduce the difficulty that laser instrument is debug, while ensureing to obtain best monitoring effect, also reduce the quantity that laser instrument uses device, increase the dirigibility of laser instrument internal structure design.
The technical solution adopted in the utility model is: a kind of semiconductor laser structure of Multi-core characteristic monitoring, it is characterized in that, branched laser instrument is arranged on same heat sink base plate, the light direction of laser instrument is all consistent, the corresponding road of every sublaser independently optical unit, this unit comprises fast axis collimation mirror, slow axis collimating mirror, PD catoptron; Quasi-parallel light beam is collimated into through fast axis collimation mirror and slow axis collimating mirror from the light beam of laser emitting, quasi-parallel light beam after collimation incides on PD catoptron, the laser characteristic of corresponding unit is gathered by PD catoptron, by PD catoptron, the quasi-parallel light of branched laser emitting is carried out conjunction bundle simultaneously, close Shu Guang and be imaged onto coupling output on fiber end face by condenser lens convergence.
Wherein, branched laser instrument is arranged on same heat sink base plate, can be that phase co-wavelength is identical or the laser instrument that wavelength is different, and the quantity of laser instrument is n, then n >=2.
Wherein, PD catoptron, is made up of the window of a photodetector and plated film, also can at the direct plated film in photodetector front end.
Wherein, photodetector and window, plated surface spectro-film, the light beam that chip of laser sends is divided into transmitted light and reflected light by spectro-film according to a certain percentage.The light splitting ratio of spectro-film can be designed to arbitrary proportion as required.
Wherein, transmitted light and reflected light, by the beam splitter of incidence, reflected light carries out the rear coupling output of conjunction bundle, and transmitted light is directly incident in photoelectric detector, carries out power collecting.
Wherein, condenser lens can be sphere, aspheric surface or GRIN Lens.
Wherein, described fiber end face through grinding and polishing, and plates anti-reflection film.
The beneficial effects of the utility model are: by the structure adopting fast and slow axis to collimate completely to laser beam, PD catoptron is utilized to carry out conjunction bundle, monitor while closing bundle, relieve multi-beam cannot monitor and the restriction of interference mutually simultaneously, this structure is no longer harsh to the requirement of its position when detector is installed, regulate conjunction Shu Shiyi to be installed by detector simultaneously, thus reduce the difficulty that laser instrument debugs, and, for the chip of laser of multiple different wave length, by detector and laser instrument mode one to one, reach the object of independent monitoring, ensure to obtain best Detection results.
Accompanying drawing explanation
Fig. 1 is the scheme schematic diagram of the semiconductor laser structure of Multi-core power monitoring.
Fig. 2 is PD mirror structure schematic diagram.
Fig. 3 is the schematic perspective view of the semiconductor laser structure of Multi-core power monitoring.
In figure: 1. chip of laser, 2. fast axis collimation lens, 3. slow axis collimation lens, 4-1. photodetector, 4-2. plated film window 5. condenser lens, 6. optical fiber, 7. heat sink base plate.
Embodiment
Below in conjunction with drawings and Examples, the utility model will be further described.Fig. 1 shows the scheme schematic diagram of the semiconductor laser structure of Multi-core power monitoring, Fig. 3 is its perspective representation, as shown in the figure, single optical path unit is by chip of laser 1, fast axis collimation lens 2, slow axis collimation lens 3, photodetector 4-1, plated film window 4-2 forms, the light beam of chip of laser 1 outgoing forms parallel beam after fast axis collimation lens 2 and slow axis collimation lens 3, this parallel beam incident is in the PD catoptron be made up of photodetector 4-1 and plated film window 4-2, passing through plated spectro-film makes transmitted light enter into photodetector, the reflected light then outgoing in 90 ° with incident light, equally, branched chip of laser is arranged on heat sink base plate 7, mounting means and installation method are all identical with chip of laser 1, the optical path unit of other chip of laser is identical with the optical path unit structure at chip of laser 1 place, transmitted light enters into photodetector, by regulating the PD catoptron that is made up of photodetector 4-1 and plated film window 4-2 by the reflection combiner of reflected light and chip of laser 1 place unit, the conjunction light beams that the reflected light of final multiple optical path unit after the PD catoptron be made up of photodetector 4-1 and plated film window 4-2 forms is assembled by condenser lens 5 and is imaged onto on the end face of output optical fibre 6, efficient coupling can be reached export and the object of Real-Time Monitoring.
Finally it should be noted that, above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit, and other amendment, change, application and embodiment can be extended in application, think that all such amendments, change, application, embodiment are all in spirit and scope of the present utility model simultaneously.
Claims (7)
1. the semiconductor laser structure of a Multi-core characteristic monitoring, it is characterized in that, branched laser instrument is arranged on same heat sink base plate, the light direction of laser instrument is all consistent, the corresponding road of every sublaser independently optical unit, this unit comprises fast axis collimation mirror, slow axis collimating mirror, PD catoptron; Quasi-parallel light beam is collimated into through fast axis collimation mirror and slow axis collimating mirror from the light beam of laser emitting, quasi-parallel light beam after collimation incides on PD catoptron, the laser characteristic of corresponding unit is gathered by PD catoptron, by PD catoptron, the quasi-parallel light of branched laser emitting is carried out conjunction bundle simultaneously, close Shu Guang and be imaged onto coupling output on fiber end face by condenser lens convergence.
2. the semiconductor laser structure of a kind of Multi-core characteristic monitoring according to claim 1, it is characterized in that, described branched laser instrument is arranged on same heat sink base plate, can be that wavelength is identical or the branched laser instrument that wavelength is different, the quantity of laser instrument is n, then n >=2.
3. the semiconductor laser structure of a kind of Multi-core characteristic monitoring according to claim 1, it is characterized in that, described PD catoptron, be made up of the window of a photodetector and plated film, also can at the direct plated film in photodetector front end, its fixed form can be gummed or machinery is fixing.
4. the semiconductor laser structure of a kind of Multi-core characteristic monitoring according to claim 3, it is characterized in that, described photodetector and window, plated surface spectro-film, the light beam that chip of laser sends is divided into transmitted light and reflected light by spectro-film according to a certain percentage, and the light splitting ratio of spectro-film can design as required and become arbitrary proportion.
5. the semiconductor laser structure of a kind of Multi-core characteristic monitoring according to claim 4, is characterized in that, described transmitted light and reflected light, by the beam splitter of incidence, reflected light carries out the rear coupling output of conjunction bundle, and transmitted light is directly incident in photoelectric detector, carries out power collecting.
6. the semiconductor laser structure of a kind of Multi-core characteristic monitoring according to claim 1, it is characterized in that, described condenser lens can be sphere, aspheric surface or GRIN Lens.
7. the semiconductor laser structure of a kind of Multi-core characteristic monitoring according to claim 1, it is characterized in that, described fiber end face through grinding and polishing, and plates anti-reflection film.
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