CN104112779A - Deuterating metallic oxide thin film based thin film transistor - Google Patents
Deuterating metallic oxide thin film based thin film transistor Download PDFInfo
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- CN104112779A CN104112779A CN201410366289.9A CN201410366289A CN104112779A CN 104112779 A CN104112779 A CN 104112779A CN 201410366289 A CN201410366289 A CN 201410366289A CN 104112779 A CN104112779 A CN 104112779A
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- 239000010409 thin film Substances 0.000 title claims abstract description 73
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 54
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 28
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims abstract description 26
- 150000004706 metal oxides Chemical class 0.000 claims description 49
- 239000010408 film Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000005669 field effect Effects 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000002146 bilateral effect Effects 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 16
- 238000009413 insulation Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 238000002161 passivation Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229960001296 zinc oxide Drugs 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- -1 deuterium ion Chemical class 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 210000001951 dura mater Anatomy 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical group 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The invention discloses a deuterating metallic oxide thin film based thin film transistor. The thin film transistor comprises a channel region, a source region and a drain region; the source region and the drain region which are arranged on bilateral sides of the channel region are in contact with the channel region; the channel region, the source region and the drain region are metallic oxide with deuterium being mixed. The deuterating metallic oxide thin film based thin film transistor has the advantages of reducing the electrical resistivity of the source region and the drain region, improving the carrier mobility of the channel region and accordingly being beneficial to improve the on state current and field effect migration rate and the switch speed due to the fact that the metallic oxide with the deuterium being mixed is served as the channel area, the source area and the drain area and keeping good electrical performance under the condition that the temperature is 200 DEG C due to the fact that the deuterium does not diffuse.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of thin-film transistor based on deuterate metal-oxide film.
Background technology
Based on the transparent film transistor of metal oxide, along with the successful Application high speed development in panel display screen gets up.In recent years, panel display screen is constantly pursued large scale and high-resolution, as the large scale intelligent television of ultra high-definition, be equipped with the various mobile devices of sharpness screen, the universal life of enriching people of these products, improve people's operating efficiency, also brought huge economic benefit simultaneously.Because traditional amorphous silicon film transistor mobility is lower than 1cm
2/ Vs, and transistor size in high definition pixel is less, therefore firing current is little, discharge and recharge the switching speed that time of delay is long, have a strong impact on display screen, the operating voltage of amorphous silicon film transistor is high simultaneously, power consumption large, heating is seriously very unfavorable to mobile device application.
The small size sharpness screen using at present is mainly driven by low-temperature polysilicon film transistor, although the very high (～100cm of low-temperature polysilicon film transistor mobility
2/ Vs), but it needs laser scanning annealing, and technique manufacturing cost is high, is difficult to realize large scale screen.Metal oxide thin-film transistor combines the advantage of amorphous silicon and polysilicon: have higher mobility (10-120cm
2/ Vs), aperture opening ratio is high and low in energy consumption; With amorphous silicon film transistor process compatible, the simple and preparation temperature lower (<300 DEG C) of technique; Non crystalline structure good uniformity, is applicable to doing large scale high-resolution screen.In addition, because Next Generation Television will adopt ultra high-definition resolution (3840 × 2160) display floater, or even many visuals field bore hole 3D technology, therefore more and more need the thin-film transistor of more speed.
But, because metal oxide semiconductor films intrinsic defect is a lot, comprise gap between oxygen room, metallic atom etc., and grain boundary defects, reduce the device performance such as field-effect mobility and reliability, switching speed of thin-film transistor.Although fluorine and the hydrogen defect in can passive metal oxide, is no more than 100cm owing to fluoridizing thin-film transistor mobility
2/ Vs, the poor heat stability of hydrogenation thin-film transistor, all can not meet practical application.As document " a kind of simple process technology that realizes self-alignment structure zinc oxide thin-film transistor " (Z.Ye, T.Chow, D.Zhang and M.Wong, SID Symposium Digest of Technical Papers 41 (1), 1139-1142 (2010) .) in reported a kind of hydrogenation thin-film transistor, this thin-film transistor improves the field-effect mobility of thin-film transistor, the highest can the reach～280cm of its field-effect mobility as active layer using the polycrystalline zinc oxide film of hydrogen doping
2/ Vs, approaches the highest the hall mobility (～300cm that Zinc oxide single crystal material tests out at present
2/ Vs).But because hydrogen spreads very soon in zinc oxide, cause the poor heat stability of device.As device heats to 110 DEG C test, every electric property (comprising the on-off ratio of reliability, device etc.) all falls into a decline, and in the time being heated to 150 DEG C, has lost soon transistorized characteristic, has become the conductor that is not subject to grid voltage control.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of thin-film transistor based on deuterate metal-oxide film that can realize the excellent electric property such as high mobility and high thermal stability.
A kind of thin-film transistor based on deuterate metal-oxide film, comprise channel region, and lay respectively at both sides, channel region, and the source region contacting with channel region (being the source region of thin-film transistor) and drain region (being the source region of thin-film transistor), described channel region, source region and drain region is the metal oxide of deuterium doping.
The effect that in the present invention, deuterium plays in source region and drain region is different from channel region: in source-drain area (referring to source region and drain region), D-atom carries out N-shaped doping to reduce the resistivity of source-drain area as donor impurity to metal oxide, improve its conductivity, and then improve the ON state current of thin-film transistor; In channel region, D-atom is used for the defect of passivated semiconductor, and then improves the field-effect mobility of thin-film transistor.Further, for thin-film transistor, field-effect mobility is higher, and switching speed is faster, utilizes the metal oxide (deuterate metal-oxide film) of deuterium doping can also improve the switching speed of thin-film transistor.In addition, the doped chemical using deuterium as metal oxide, can also improve the thermal stability of device.
The structure of the thin-film transistor in the present invention can be any type, includes but not limited to planar channeling, vertical-channel, coplanar electrodes, staggered electrode, top grid, bottom gate, single grid or multi-gate structure.Wherein, coplanar electrode structure refers to the source-drain electrode of thin-film transistor and gate electrode and is positioned at the homonymy of channel region.Source-drain electrode and gate electrode that staggered electrode structure refers to thin-film transistor are positioned at not homonymy of channel region.
The substrate material of thin-film transistor can be one of them, but be not limited to following several: polymer, glass, amorphous silicon, polysilicon or the monocrystalline silicon that comprises pre-prepared traditional integrated circuit, substrate can comprise the tectal electric conducting material of one deck electric insulation, as has the tectal stainless steel of electric insulation.
In thin-film transistor, gate electrode can be metal and metal alloy, the transparent conductive oxide of amorphous or polycrystalline form, and as the zinc oxide of tin-doped indium oxide, doping, etc.The material of the gate dielectric layer of thin-film transistor can be one of them in following material but be not limited to following several: the insulating material of silicon dioxide, silicon oxynitride, silicon nitride or high-k.The material that passivation insulation is used includes but not limited to following several: silicon dioxide, silicon oxynitride, silicon nitride, alundum (Al2O3), titanium dioxide, polymer or other insulating material.
In described channel region, the concentration of D-atom is less than the concentration of D-atom in source region and drain region.
For source-drain area, the doping content of D-atom should ensure that source-drain area can conduct electricity.For channel region, the high-dopant concentration of deuterium can not make channel region conduction.Therefore according to different doping demands, in channel region, the concentration of D-atom should be far smaller than the concentration of D-atom in source-drain area.
In described source region and drain region, the concentration of D-atom is 1 × 10
20cm
-3～1 × 10
23cm
-3.
In source region and drain region, the effect of D-atom is to improve carrier concentration, reduces the resistivity in source region and drain region, makes source region and drain region conduction.In the time that doping content is lower, can not play the function that makes source region and drain region conduction, and doping content too high (being greater than saturated concentration), remaining D-atom can reduce and causes scattering to strengthen, and can increase conversely resistance.Therefore, the concentration of D-atom need to be rationally set, meet application demand.As preferably, in described source region and drain region, the concentration of D-atom is 1 × 10
20cm
-3～1 × 10
21cm
-3, and in source region in the concentration of D-atom and drain region the concentration of D-atom independent separately.
In the concentration of the D-atom in source region and drain region, the concentration of D-atom is irrelevant, and the two can be identical, also can be different, set according to real needs.When the two is identical, device technology is simple, when the two is different, and device technology complexity.
In described channel region, the concentration of D-atom is 1 × 10
12cm
-3～5 × 10
19cm
-3.
In thin-film transistor, channel region must be non-conductive, and doping D-atom mainly plays passivation, reduces the defect in channel region, and then improve carrier mobility, and then improve the field-effect mobility of thin-film transistor.Doping content is too high, and channel region can be conducted electricity, and too low effect is not obvious, therefore, and for ensureing that the function of thin-film transistor need to rationally arrange the concentration of D-atom in channel region.As preferably, in described channel region, the concentration of D-atom is 1 × 10
18cm
-3～5 × 10
19cm
-3.
Described metal oxide is single oxide or composite oxides;
Metallic element in single oxide is zinc, tin, copper or indium;
Metallic element in composite oxides be in zinc, tin, indium, gallium, aluminium, titanium, silver, copper two or more.
The metal oxide that in thin-film transistor in the present invention, channel region, source region and drain region three adopt is separate.Can be according to application demand for channel region, source region and drain region, can select respectively different metal oxides to do.Conventionally, for the consideration to preparation technology, the same metal oxide that channel region, source region and drain region three adopt conventionally.
In the present invention, the ion implantation of the employing of deuterate metal-oxide film prepares, and first utilizes film deposition techniques to prepare metal-oxide film, then the metal-oxide film that adopts Implantation normal direction to prepare injects certain density deuterium.Also can, containing preparing metal-oxide film under the atmosphere of deuterium, when preparation, by flow control, prepare by the concentration of deuterium in controlled atmospher environment the deuterate metal-oxide film that deuterium concentration is different.
Different with the concentration of deuterium in source region, drain region for ensureing channel region, preparation technology is comparatively complicated.When channel region and source region, the metal oxide that drain region adopts is identical, the deuterate metal-oxide film that is directly first prepared into the deuterium concentration of making sufficient channel region (can first be prepared metal-oxide film, utilizing ion implantation deuterate, also can be directly containing under the atmosphere of deuterium, prepare meet channel region in the deuterate metal-oxide film of deuterium concentration), after re-using certain method channel region being blocked, avoid after have deuterium to be injected in channel region while carrying out Implantation, utilize ion implantation to continue to inject certain density deuterium to source region and drain region, improve the deuterium concentration making in source region and drain region.In the time that channel region and source region, drain region adopt different metal oxide methods, can first prepare metal-oxide film, then adopt respectively the corresponding region of Implantation normal direction to inject the deuterium of setting concentration (other regions adopt mask plates to block) for channel region and source region, drain region.
The number of the D-atom that the concentration of not making the D-atom in specified otherwise channel region, source region and drain region in the present invention comprises in all referring to every cubic centimetre, unit is cm
-3.
In addition, preparation technology is also relevant with the structure of thin-film transistor, based on above principle, according to different structures, adjusts flexibly concrete preparation process.
Thin-film transistor based on deuterate metal-oxide film of the present invention can prepare as follows:
1) on substrate, deposition forms metal oxide semiconductor films, and is etched into active layer;
2) deposition forms gate insulation layer, covers semiconductor active layer and substrate;
3) D-atom that transmission grating insulating barrier is introduced low concentration is to semiconductor active layer;
4) on gate insulation layer, deposition forms conductive film, forms gate electrode after over etching;
5) D-atom that transmission grating insulating barrier is introduced high concentration is to source-drain area, and owing to there being stopping of gate electrode, D-atom can not be injected in channel region;
6) deposition forms passivation insulation and protects whole device;
7) open fairlead by photoetching and etching passivation insulation and gate insulation layer, expose gate electrode, source region and drain region;
8) in passivation insulation, plated metal etching form conductive layer, connect each electrode.
Described deposition process is chemical gas-phase method, physical vapor method, electrochemical process or sol-gal process.
Compared with prior art, thin-film transistor advantage based on deuterate metal-oxide film of the present invention is, using the metal oxide of deuterium doping as channel region, source region and drain region, can reduce the resistivity in source region and drain region, improve the carrier mobility of channel region, and then be conducive to improve ON state current, field-effect mobility and the switching speed of thin-film transistor.And the thin-film transistor based on deuterate metal-oxide film of the present invention is being that at 200 DEG C, heat treatment is after 1 hour in temperature, and transistor still keeps good electric property, the electric current between source electrode and drain electrode is subject to the big or small control of grid voltage.
Brief description of the drawings
Fig. 1 is the transistorized cross-sectional view of top self-aligned with grid electrode structural membrane;
Fig. 2 a is the cross-sectional view that shifts active layer after pattern on substrate;
Fig. 2 b deposits the cross-sectional view of carrying out deuterate processing after gate dielectric layer on active layer;
Fig. 2 c be on dielectric layer after deposition and etching gate electrode D-atom inject the cross-sectional view of source-drain area;
Fig. 2 d opens the device architecture schematic diagram after fairlead through dielectric layer;
Fig. 3 is that the thin-film transistor of embodiment 1 is without heat treatment with through the leakage current of 200 DEG C of heat treatments after 1 hour and the relation curve of gate voltage;
Fig. 4 is the transistorized cross-sectional view of double grid electrode structural membrane;
Fig. 5 is the leakage current of thin-film transistor and the relation curve of gate voltage of comparative example 1;
Fig. 6 is that the thin-film transistor of comparative example 2 is without the relation curve of heat treatment and the leakage current after heat treatments at different different time and gate voltage.
Symbol description
1: substrate 2: source region
3: drain region 4: channel region
5: gate dielectric layer 6: gate electrode layer
7: passivation insulation 8: source metal lead-in wire
9: gate metal lead-in wire 10: drain metal lead-in wire
11: second gate electrode 12: second gate dielectric layer
13: active layer 14: photoresist
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, also the present invention is described in further detail by reference to the accompanying drawings hereby to enumerate preferred embodiment.
Embodiment 1
The structure of the thin-film transistor based on deuterate metal-oxide film of the present embodiment as shown in Figure 1, comprises substrate 1 from bottom to up successively, active layer, gate dielectric layer 5, gate electrode 6 and passivation insulation 7.Active layer comprises channel region 4, and is positioned at the both sides of channel region 4, and the source region 2 contacting with channel region and drain region 3.Source region 2, drain region 3 and gate electrode 6 respectively by source metal go between 8, gate metal lead-in wire 9 and drain metal lead-in wire 10 lead to outside passivation insulation 7.In the present embodiment, the length of channel region 4 is 16 μ m, and width is 10 μ m.
Wherein, the material of substrate 1 is glass, and the material of gate dielectric layer 5 is silica, and the material of gate electrode 6 is that transparent conductive oxide (being tin-doped indium oxide in the present embodiment) and the material of passivation insulation 7 are silica.The thickness of active layer is 100nm, and the thickness of gate dielectric layer 5 is 100nm, and the thickness of gate electrode 6 is 100nm, and the thickness of passivation insulation 7 is 300nm.
Source region 2, drain region 3 and the channel region 4 of thin-film transistor is deuterate metal-oxide film (being zinc oxide in the present embodiment).Wherein, in source region 2, the concentration of D-atom is 2 × 10
20cm
-3, in drain region 3, the concentration of D-atom is 2 × 10
20cm
-3, in channel region 4, the concentration of D-atom is 1 × 10
19cm
-3.
The thin-film transistor based on deuterate metal-oxide film of the present embodiment is prepared by the following method:
(1) on substrate 1, deposit layer of metal sull (being zinc-oxide film in the present embodiment), and etching formation semiconductor active layer 13, concrete structure is as shown in Figure 2 a;
(2) on the structure shown in Fig. 2 a, deposition forms gate dielectric layer 5, adopts ion implantation, and transmission grating dielectric layer 5 injects deuterium to active layer 13, and concrete structure is shown in Fig. 2 b.
(2) in the structure shown in Fig. 2 b, deposit one deck conductive layer, make 14 etchings, transfer mask version pattern with photoresist form gate electrode 6.Carry out afterwards autoregistration, with photoresist 14 as dura mater, continue to inject deuterium ion, make more deuterium ions be introduced in source 2 and leak 3rd district, because not having deuterium, the effect channel region of photoresist 14 injects, and then the concentration of the middle D-atom in source region and drain region will be higher than the concentration that makes D-atom in channel region, form source region 2 and drain region 3, concrete structure is as shown in Figure 2 c.
(3) remove shown in Fig. 2 c after the photoresist 14 in structure; deposition forms one deck passivation insulation 7 protection devices; use etching or the technique peeled off to open contact lead-wire hole through this layer insulating, make source as 2, drain region 3 and gate electrode 6 parts expose, concrete structure is as shown in Fig. 2 d.
(4) in the structure shown in Fig. 2 d, deposition forms layer of metal conductive layer, cover this three-end electrode, form corresponding electrical interconnection line by etching, obtain source metal lead-in wire 8, gate metal lead-in wire 9 and drain metal lead-in wire 10, and then obtain thin-film transistor as shown in Figure 1.The formation of metal conducting layer can be used such as the method for magnetron sputtering, electrochemical process or evaporation (adopting magnetron sputtering method preparation in the present embodiment).
Active layer 13, gate dielectric layer 5, gate electrode 6 and passivation insulation 7 can be used following deposition techniques to form: magnetron sputtering method, chemical vapour deposition (CVD), thermal evaporation, ald, pulsed laser deposition, chemical solution or epitaxial growth.In the present embodiment, adopt magnetron sputtering method
Technological process equipment needed thereby described in Fig. 2 a to 2d is compatible mutually with traditional flat panel display manufacturing process, for example, and magnetron sputtering apparatus, plasma enhanced chemical vapor deposition, ion shower instrument, etching system and reactive ion etching equipment.
Fig. 3 be the present embodiment thin-film transistor without heat treatment and through 200 DEG C of heat treatments the leakage current (I after 1 hour
d) and gate voltage (V
gS) relation curve (source-drain voltage V when measurement
dS=5V).Can find out, the leakage current before and after heat treatment overlaps substantially with gate voltage relation curve, and the thin-film transistor that the present embodiment is described is through 1 hour front and back of heat treatment at 200 DEG C, and its electric property remains unchanged substantially.In addition, leakage current and gate voltage relation curve according to thin-film transistor before without heat treatment, the field-effect mobility that adopts the relation formula of saturation region current/voltage to extract the thin-film transistor that obtains the present embodiment is 280cm
2/ Vs, ON state current is 10
-4a.
Embodiment 2
Identical with embodiment 1, difference is that the thin-film transistor based on deuterate metal-oxide film is double grid electrode structural membrane transistor, its cross-sectional view as shown in Figure 4, comprise substrate 1, be arranged at the gate electrode 6 on substrate 1, be coated on the gate dielectric layer 5 of gate electrode 6, be positioned at the active layer on gate dielectric layer 5, second gate dielectric layer 12, is coated on active layer and contacts with gate dielectric layer 5, and is positioned at the second gate electrode 11 on second gate dielectric layer 12.Active layer comprises channel region 4, and is positioned at the both sides of channel region 4, and the source region 2 contacting with channel region and drain region 3.And the T-shaped structure in 4 one-tenth of channel regions, two side portions region lays respectively on source region 2 and drain region 3.
The thin-film transistor based on deuterate metal-oxide film of the present embodiment is prepared by the following method:
(1) on substrate 1, deposit one deck conductive layer and etching obtains gate electrode 6;
(2) after step (1) is processed, continue to prepare gate dielectric layer 5;
(3) depositing zinc oxide film inject the deuterium of respective concentration on gate dielectric layer 5, has injected rear etching and has obtained source region 2 and drain region 3;
(4) depositing zinc oxide film after step (3) is processed, and inject after the deuterium of respective concentration, etching obtains channel region 4;
(5) after step (4) is processed, continue after deposition second gate dielectric layer 12 (identical with the material of gate dielectric layer 5), continue deposition one deck conductive layer and be etched into second gate electrode 11, and then obtaining structure thin-film transistor as shown in Figure 4.
The field-effect mobility of the thin-film transistor of the present embodiment is 200cm
2/ Vs left and right, ON state current is 5 × 10
-5a, and through heat treatment at 200 DEG C after 1 hour, its electric property remains unchanged substantially.
Embodiment 3
Identical with embodiment 1, in difference source region 2, the concentration of D-atom is 1 × 10
21cm
-3, in drain region 3, the concentration of D-atom is 1 × 10
21cm
-3, in channel region 4, the concentration of D-atom is 5 × 10
15cm
-3.
The field-effect mobility of the thin-film transistor of the present embodiment is 40cm
2/ Vs left and right, ON state current is 1 × 10
-5a, and through heat treatment at 200 DEG C after 1 hour, its electric property remains unchanged substantially.
Comparative example 1
Identical with embodiment 1, in difference source region 2, the concentration of D-atom is 2 × 10
20cm
-3, in drain region 3, the concentration of D-atom is 2 × 10
20cm
-3, in channel region 4 without D-atom.
Fig. 5 is thin-film transistor leakage current at normal temperatures and the relation curve of gate voltage (source-drain voltage V when measurement of the present embodiment
dS=5V), the field-effect mobility that can calculate the thin-film transistor of the present embodiment is 8cm
2/ Vs, ON state current is 2 × 10
-6a.
Comparative example 2
Identical with embodiment 1, difference is that source region 2, drain region 3 and the channel region 4 of thin-film transistor is metal hydride sull.Wherein, in source region 2, the concentration of hydrogen atom is 2 × 10
20cm
-3, in drain region 3, the concentration of hydrogen atom is 2 × 10
20cm
-3, in channel region 4, the concentration of hydrogen atom is 1 × 10
19cm
-3.And the length of channel region 4 is 16 μ m in the present embodiment, width is 30 μ m.
Fig. 6 is that the thin-film transistor of the present embodiment is without relation curve (source-drain voltage V when measurement of heat treatment and the leakage current after heat treatments at different different time and gate voltage
dS=5V).Can find out, heat treated temperature is higher, and the processing time is longer, and the electric property of the thin-film transistor of the present embodiment is poorer.And process after 20min at 110 DEG C, obvious decline has appearred in the electric property of thin-film transistor, further, at 150 DEG C, after heat treatment 25min, this thin-film transistor has almost lost transistorized characteristic, has become the conductor that is not subject to grid voltage control.In addition, the field-effect mobility of the thin-film transistor by calculating the present embodiment is 280cm
2/ Vs, ON state current is 4 × 10
-4a.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, any be familiar with those skilled in the art the present invention disclose technical scope in; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (8)
1. the thin-film transistor based on deuterate metal-oxide film, comprise channel region, and lay respectively at both sides, channel region, and the source region and the drain region that contact with channel region, it is characterized in that, described channel region, source region and drain region is the metal oxide of deuterium doping.
2. the thin-film transistor based on deuterate metal-oxide film as claimed in claim 1, is characterized in that, in described channel region, the concentration of D-atom is less than the concentration of D-atom in source region and drain region.
3. the thin-film transistor based on deuterate metal-oxide film as claimed in claim 1, is characterized in that, in described source region and drain region, the concentration of D-atom is 1 × 10
20cm
-3～1 × 10
23cm
-3.
4. the thin-film transistor based on deuterate metal-oxide film as claimed in claim 1, is characterized in that, in described source region and drain region, the concentration of D-atom is 1 × 10
20cm
-3～1 × 10
21cm
-3.
5. the thin-film transistor based on deuterate metal-oxide film as described in any one claim in claim 1～4, is characterized in that, in described channel region, the concentration of D-atom is 1 × 10
12cm
-3～5 × 10
19cm
-3.
6. the thin-film transistor based on deuterate metal-oxide film as claimed in claim 1, is characterized in that, in described channel region, the concentration of D-atom is 1 × 10
18cm
-3～5 × 10
19cm
-3.
7. the thin-film transistor based on deuterate metal-oxide film as claimed in claim 1, is characterized in that, described metal oxide is single oxide or composite oxides;
Metallic element in single oxide is zinc, tin, copper or indium;
Metallic element in composite oxides be in zinc, tin, indium, gallium, aluminium, titanium, silver, copper two or more.
8. the thin-film transistor based on deuterate metal-oxide film as claimed in claim 7, is characterized in that, the metal oxide that described channel region, source region and drain region three adopts is independent separately.
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| CN108141181A (en) * | 2015-07-30 | 2018-06-08 | 电路种子有限责任公司 | The complementary current FET amplifier of multi-stag and feedforward compensation |
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Application publication date: 20141022 |