CN105576017B - A kind of thin film transistor (TFT) based on zinc-oxide film - Google Patents
A kind of thin film transistor (TFT) based on zinc-oxide film Download PDFInfo
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- CN105576017B CN105576017B CN201510939432.3A CN201510939432A CN105576017B CN 105576017 B CN105576017 B CN 105576017B CN 201510939432 A CN201510939432 A CN 201510939432A CN 105576017 B CN105576017 B CN 105576017B
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 66
- 229960001296 zinc oxide Drugs 0.000 title claims abstract description 66
- 239000010408 film Substances 0.000 title claims abstract description 49
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 95
- 230000007547 defect Effects 0.000 abstract description 8
- 239000011241 protective layer Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 13
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of thin film transistor (TFT) based on zinc-oxide film, which includes semiconductor channel layer, gate insulation layer, source electrode, drain and gate.It is of the invention based on the thin film transistor (TFT) of zinc-oxide film using zinc-oxide film as semiconductor channel layer; using top gate structure and using double-deck gate insulation layer; protective layer of first insulating layer as zinc-oxide film in gate insulation layer, energy effective protection zinc-oxide film are not influenced by environment and subsequent technique.Pass through the short annealing under multiple oxygen atmosphere, so that the carrier concentration of zinc-oxide film is effectively controlled, and then thin film transistor (TFT) is allow to realize shutdown under the grid bias close to 0V, and hydrogenation treatment is carried out to zinc-oxide film, the interface defect of repairing semiconductor channel layer and insulating layer simultaneously, so that the electrical stability of thin film transistor (TFT) is greatly improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of thin film transistor (TFT) based on zinc-oxide film.
Background technique
In recent years, not with the rapid proliferation and high-clear display of the mobile terminals such as smart phone and tablet computer
Disconnected development, requirement of the people to display technology is higher and higher, such as large scale, high contrast, high-resolution, low-power consumption, Gao Kai
Mouth rate etc..Pixel unit of the thin film transistor (TFT) as liquid crystal display panel (LCD) and Organic Light Emitting Diode (OLED) display panel
Control switch component, influence of the performance to screen display technology are most important.Film crystal used by traditional liquid crystal panel
There are mainly two types of pipes, and one is amorphous silicon film transistors, and since its is at low cost and technology relative maturity, thus application is the widest
It is general, but the very low (generally less than < 1cm of the mobility of amorphous silicon material2/ Vs), uniformity is poor, leads to amorphous silicon display panel
Power consumption is big, sensitive to visible light additionally, due to silicon materials, is also easy to produce photo-generated carrier, needs to install black matrix additional in liquid crystal display panel
Backlight is shielded, manufacturing cost and technical difficulty is increased in this way, can also reduce yields.Another kind application more is low
Warm polycrystalline SiTFT, the mobility of polysilicon are high (up to 100cm2/ Vs), reduce display power consumption, but polysilicon
It is same light sensitive, it needs to recrystallize silicon by the way of quasi-molecule laser annealing additionally due to preparing polysilicon, technique
It is at high cost, and due to the limitation of process technique, it also cannot achieve the volume production of large scale low tempterature poly silicon at present.
Nomura in 2003 et al. has delivered the high performance thin film transistor based on multi-element metal oxide on Nature
Device, MOS transistor are increasingly becoming research hotspot, including tin indium oxide, indium gallium zinc oxide, zinc oxide etc., and
Wherein zinc oxide is as a kind of binary oxide, because its structure is simple, rich content, and feature at low cost, by more and more
Concern, become the following field of display technology replace silicon important selection.Zinc oxide is a kind of wide-band gap material, forbidden bandwidth
About 3.37eV to visible transparent, and is easy to produce the film of high quality at relatively low temperature, at present zinc oxide films
Film transistor can obtain relatively good performance, such as up to 60cm2The mobility of/Vs, more than 107On-off ratio, connect
It is bordering on the cut-in voltage etc. of 0V.
But two main problems are also faced with for the functionization of zinc oxide thin-film transistor at present.It is that vacuum is heavy first
The zinc-oxide film carrier concentration usually with higher that product technology obtains, causes device to be difficult within the scope of suitable grid voltage
Realize shutdown.Another problem is that zinc-oxide film is extremely sensitive to the moisture in air, lack the design of reasonable structure and
Encapsulation, which all will lead to device performance, degenerates even lose performance rapidly.In order to improve the electric property of zinc oxide thin-film transistor,
Researcher had done considerable work, but can solve the research of zinc oxide thin-film transistor stability very well not yet
Occur.For example, the overwhelming majority is all bottom grating structure about the report of zinc oxide thin-film transistor, zinc-oxide film in this structure
It is directly exposed to air, convenient for handling semiconductor layer, such as annealing, ion implanting, to improve its performance, but by
It can not be practical in the device of the sensibility of zinc oxide, this structure.On the other hand, also there is the zinc-oxide film of a small number of top gate structures
The research of transistor is reported, in this configuration, zinc oxide material how is protected in subsequent photoetching and wet etching, and
How to reduce the boundary defect of zinc oxide material and insulating layer is two problems urgently to be resolved.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides one kind high stability, high reliability be can be realized and compared with Gao Qian
The thin film transistor (TFT) based on zinc-oxide film of shifting rate.
The invention proposes a kind of thin film transistor (TFT)s based on zinc-oxide film, including semiconductor channel layer, source electrode, leakage
The gate insulation layer of pole, grid and bilayer, using the device architecture of top-gated and staggered electrode, structure, that is, finger source electrode of staggered electrode
With drain electrode below semiconductor channel layer, grid is located at the top of semiconductor channel layer, and gate insulation layer is by semiconductor channel layer
And gate isolation, including the first insulating layer and second insulating layer double-layer structure, the first insulating layer directly connect with semiconductor channel layer
Touching, the semiconductor channel layer use zinc-oxide film.The zinc-oxide film is the N-shaped conductive thin of monocrystalline or heteromorphs
Film
In the present invention, the first insulating layer of thin film transistor (TFT) be located at semiconductor channel layer top and zinc-oxide film it is straight
Contact, the defect of interface is relatively fewer when due to aluminum oxide film and zinc-oxide film contact, thus can select
Material of the aluminum oxide as the first insulating layer.The second insulating layer of thin film transistor (TFT) can then use aluminum oxide, oxygen
Change the materials such as hafnium, silica, silicon nitride.
Protective layer of first insulating layer of thin film transistor (TFT) as zinc-oxide film, in etched thin film transistors channel region
When, semiconductor channel layer and the first insulating layer are subjected to photoetching and wet etching together, zinc oxide can be effectively protected and partly led
Body layer is not influenced by external environment and process, while ensure that the good contact of semiconductor channel layer and insulating layer, is subtracted
Few interface defect density.
First thickness of insulating layer is 9 to 15nm, in order to method using fast wet etching, is reduced in etching to below half
The influence of the lateral undercutting of conductor channel layer.
After deposition obtains zinc-oxide film, short annealing under oxygen atmosphere is carried out to it, by zinc oxide semi-conductor ditch
The resistivity of channel layer is controlled 1 × 105Ω cm to 1 × 107Between Ω cm.
After wet etching obtains channel region, short annealing under second of oxygen atmosphere is carried out, to zinc oxide semi-conductor
Layer carries out hydrogenation treatment, while repairing the defect at part channel layer and interfacial dielectric layer.
After having deposited second insulating layer, short annealing under third time oxygen atmosphere is carried out, weight is carried out to the second layer insulating
Internal flaw is repaired in crystallization, in subsequent gate lithography step, improves insulating layer to the resistance to corrosion of alkaline-based developer,
Reduce the generation of electric leakage.
In the present invention, source electrode, the drain and gate of the thin film transistor (TFT) be can be used with stronger resistance to corrosion
Metal or metal alloy, such as the transparent conductive oxide of gold, platinum, titanium and amorphous or heteromorphs, as tin indium oxide,
The zinc oxide etc. of adulterated al.
The substrate material of thin film transistor (TFT) can be one of, but be not limited to following several, glass, quartz, list
Crystal silicon chip etc. is also possible to cover the stainless steel of electric insulation layer.
Compared with prior art, the advantages of thin film transistor (TFT) of the invention based on zinc-oxide film, is, using top
Grid structure, and double-deck gate insulation layer is added, the first insulating layer effectively protects semiconductor channel layer rear as protective layer
It is not influenced by external environment and subsequent technique in continuous processing step, second insulating layer, which has further functioned as, carries out channel layer
The effect of isolation and packaging protection.By the quick thermal annealing process under oxygen atmosphere three times, so that zinc oxide semi-conductor channel
The carrier concentration of layer is effectively controlled, so that the cut-in voltage of thin film transistor (TFT) is controlled in 0V or so；So that channel layer and
Defect at interfacial dielectric layer is repaired, and plays hydrogenization to zinc oxide, so that the stability of thin film transistor (TFT) is big
It is big to improve；So that the second layer insulating internal flaw is repaired, its internal crystallographic structure is improved, in subsequent photoetched grid
Technique in, the corrosion resistance of alkaline-based developer is enhanced, the generation of electric leakage is reduced.Using process proposed by the present invention
With device architecture can produce good uniformity, high stability, high reliability, high mobility zinc oxide thin-film transistor, it is right
The functionization of zinc oxide thin-film transistor is made that significant improvement and raising, shows for next-generation high definition, Flexible Displays and transparent
Display technology provides strong support.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the top-grate structure thin film transistor；
Fig. 2 is the schematic diagram of the section structure for carrying out short annealing processing after depositing zinc oxide film on source-drain electrode；
Fig. 3 is to deposit the first insulating layer on zinc-oxide film and etch the section knot made annealing treatment after active area
Structure schematic diagram；
Fig. 4 is to continue to deposit the schematic diagram of the section structure made annealing treatment after second insulating layer on the first insulating layer；
Fig. 5 is to deposit the schematic diagram of the section structure after grid and transition diagram over the second dielectric；
Fig. 6 is the transfer characteristic curve of the thin film transistor (TFT) of the embodiment；
Symbol description in figure:
Specific embodiment
It is clearer in order to illustrate the purpose of the present invention, technical solution and advantage, with reference to the accompanying drawings and examples
The present invention is described in further detail.
The structural schematic diagram of the thin film transistor (TFT) based on zinc-oxide film of the present embodiment as shown in Figure 1, using top-gated and
The structure of staggered electrode, from bottom to up successively include substrate 1, source electrode 2 and drain electrode 3, semiconductor channel layer 4, the first insulating layer 5,
The shape of second insulating layer 6, grid 7 and passivation insulation 8, the first insulating layer 5 is consistent with 4 shape of semiconductor channel layer, as
The protective layer of semiconductor channel layer 4, source electrode 2, drain electrode 3 and grid 7 pass through source metal lead 10, drain metal lead 11 respectively
It is led to except passivation insulation 8 with gate metal lead 9.The length and width of the channel of thin film transistor (TFT) is equal in the present embodiment
It is 20 μm.
Wherein the material of the substrate 1 is glass or quartz, and source electrode 2 and the material of drain electrode 3 are chromium gold double-level-metal, chromium
The thickness of layer gold is respectively 5nm and 60nm, and the material of semiconductor channel layer 4 is the N-shaped zinc oxide conduction of monocrystalline or heteromorphs
Film, with a thickness of 20nm, the material of the first insulating layer 5 is aluminum oxide, and with a thickness of 10nm, the material of second insulating layer 6 is
Aluminum oxide, with a thickness of 20nm, the material of grid 7 is gold, and with a thickness of 60nm, the material of passivation insulation 8 is silica,
With a thickness of 300nm.
As shown in Figure 1, the thin film transistor (TFT) is top-gated and staggered electrode configuration, grid 7 is located at semiconductor channel layer 4
Top, source electrode 2 and drain electrode 3 be located at semiconductor channel layer 4 below.
As shown in Figure 1, the semiconductor channel layer 4 of thin film transistor (TFT) with below source electrode 2 and drain electrode it is 3 be overlapped respectively, respectively
Lap width l is identical, is 20 μm.
The resistivity of the zinc oxide semi-conductor channel layer 4 of the thin film transistor (TFT) is 8 × 105Ω·cm。
A kind of specific structure of thin film transistor (TFT) proposed by the present invention based on zinc-oxide film can be through but not limited to
Following methods preparation:
(1) one layer of chromium gold thin film is deposited on substrate 1, and shifts the figure of source electrode 2 and drain electrode 3 by stripping technology, so
After continue deposit one layer of zinc-oxide film as semiconductor channel layer 4, as shown in Fig. 2, and to zinc oxide semi-conductor channel layer 4 into
Short annealing under row oxygen atmosphere, to control the carrier concentration of zinc-oxide film；
(2) protective layer of the one layer of aluminum oxide film as semiconductor channel layer 4 is deposited in structure shown in Fig. 2,
That is the first insulating layer 5, then the first insulating layer 5 to semiconductor channel layer 4 and its above carries out wet etching together, shifts
To the figure of active area (channel region), as shown in figure 3, then carrying out short annealing under oxygen atmosphere；By semiconductor channel layer and
First insulating layer carries out photoetching and wet etching together, can be effectively protected zinc oxide semiconductor layer not by external environment and work
The influence of skill processing, while ensure that the good contact of semiconductor channel layer and insulating layer, reduce interface defect density；After etching
Annealing is carried out under oxygen atmosphere can carry out hydrogenation treatment to zinc oxide semiconductor layer, while repair part channel layer and insulation
Defect at bed boundary；
(3) continue to deposit second insulating layer of the one layer of aluminum oxide as thin film transistor (TFT) in structure shown in Fig. 3
6, as shown in figure 4, then carrying out short annealing under oxygen atmosphere, second insulating layer can be recrystallized, repair internal lack
It falls into, in subsequent gate lithography step, improves insulating layer to the resistance to corrosion of alkaline-based developer, reduce the generation of electric leakage；
(4) continue to deposit one layer of gold thin film in structure shown in Fig. 4, by the figure of stripping technology transfer gate 7, such as
Shown in Fig. 5；
(5) continue to deposit passivation insulation of the layer insulating as the thin film transistor (TFT) in structure shown in Fig. 5
8, protect device, as shown in Figure 1, and etch lead hole in passivation insulation 8 using the technique of wet etching later,
Expose source electrode 2, drain electrode 3 and 7 part of grid, then proceed to one layer of metal of deposition, gate metal is obtained by stripping technology and is drawn
Line 9, source metal lead 10 and drain metal lead 11.
Semiconductor channel layer 4, the first insulating layer 5 and second insulating layer 6 can by atomic layer deposition, magnetron sputtering,
The technologies such as pulse laser deposition, chemical vapor deposition deposit to obtain, and this embodiment uses technique for atomic layer deposition.
The metal layer of source electrode 2, drain electrode 3 and grid 7 can pass through the technologies such as thermal evaporation, electron beam evaporation, magnetron sputtering
Deposition obtains, and in this embodiment, chromium thin film is deposited using electron beam evaporation, and gold thin film is obtained using thermal evaporation deposition.
Process manufacturing technology needed for process flow described in Fig. 1 to Fig. 5 and traditional FPD manufacturing process technology
It is compatible, such as chemical vapor deposition, magnetron sputtering, photoetching technique etc..
Fig. 6 show the transfer characteristic curve of the thin film transistor (TFT) based on zinc-oxide film made from the present embodiment, to device
Part carries out continuous 5 scanning transfer characteristic curve, cut-in voltage VONVariable quantity be less than 0.1V, device has excellent electricity steady
It is qualitative.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of protection of the claims
It is quasi-.
Claims (6)
1. a kind of preparation method of the thin film transistor (TFT) based on zinc-oxide film, the thin film transistor (TFT) include semiconductor ditch
Channel layer, source electrode, drain electrode, grid and gate insulation layer, which is characterized in that the thin film transistor (TFT) uses top-gated and staggered electrode
Structure, semiconductor channel layer are zinc-oxide film, and gate insulation layer is between semiconductor channel layer and grid, including first absolutely
Edge layer and second insulating layer, the first insulating layer are directly contacted with semiconductor channel layer；Preparation method includes following technique: heavy
After product obtains zinc-oxide film, short annealing under oxygen atmosphere is carried out to it, by the resistivity of zinc oxide semi-conductor channel layer
Control is 1 × 105 Ω cm to 1 × 107 Between Ω cm；Channel region is obtained using wet etching, is carried out under second of oxygen atmosphere
Short annealing carries out hydrogenation treatment to zinc oxide semi-conductor channel layer, while repairing lacking at channel layer and interfacial dielectric layer
It falls into；After having deposited second insulating layer, short annealing under third time oxygen atmosphere is carried out, second insulating layer is recrystallized.
2. the preparation method of the thin film transistor (TFT) according to claim 1 based on zinc-oxide film, which is characterized in that institute
The first insulating layer stated is covered on the top of semiconductor channel layer, and shape is overlapped with semiconductor channel layer holding, the first insulating layer
With a thickness of 9 to 15 nm.
3. the preparation method of the thin film transistor (TFT) according to claim 1 based on zinc-oxide film, which is characterized in that institute
The semiconductor channel layer stated and the width of source electrode and the lap of drain electrode belowlIt is identical, it is 10 to 20 μm.
4. the preparation method of the thin film transistor (TFT) according to claim 1 based on zinc-oxide film, which is characterized in that described
The zinc-oxide film that uses of semiconductor channel layer for monocrystalline or the N-shaped conductive film of heteromorphs.
5. the preparation method of the thin film transistor (TFT) according to claim 1 based on zinc-oxide film, which is characterized in that described
The material that uses of the first insulating layer be aluminum oxide.
6. the preparation method of the thin film transistor (TFT) according to claim 1 based on zinc-oxide film, which is characterized in that described
The material that uses of second insulating layer be one of aluminum oxide, hafnium oxide, silica, silicon nitride.
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| CN105870135A (en) * | 2016-05-19 | 2016-08-17 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN106374044B (en) * | 2016-11-02 | 2019-06-11 | 杭州潮盛科技有限公司 | Semiconductor structure and preparation method thereof |
| CN107564844A (en) * | 2017-07-28 | 2018-01-09 | 韩华新能源（启东）有限公司 | A kind of graphite boat saturation double membrane structure and coating process and graphite boat |
| CN110660864B (en) * | 2018-06-29 | 2024-06-21 | 山东大学苏州研究院 | Preparation method of high-frequency semiconductor thin film field effect transistor |
| CN110233156A (en) * | 2019-07-05 | 2019-09-13 | 深圳市华星光电半导体显示技术有限公司 | The production method and thin film transistor base plate of thin film transistor base plate |
| CN114220865A (en) * | 2021-12-13 | 2022-03-22 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor, manufacturing method thereof and display panel |
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| KR100686337B1 (en) * | 2003-11-25 | 2007-02-22 | 삼성에스디아이 주식회사 | Thin Film Transistor and method of fabricating the same and flat panel display using said Thin Film Transistor |
| KR101117948B1 (en) * | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method of Manufacturing a Liquid Crystal Display Device |
| KR20080102665A (en) * | 2007-05-21 | 2008-11-26 | 엘지전자 주식회사 | Thin film transistor and display device comprising the same |
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