CN105576017A - Thin-film transistor based on zinc oxide thin film - Google Patents
Thin-film transistor based on zinc oxide thin film Download PDFInfo
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- CN105576017A CN105576017A CN201510939432.3A CN201510939432A CN105576017A CN 105576017 A CN105576017 A CN 105576017A CN 201510939432 A CN201510939432 A CN 201510939432A CN 105576017 A CN105576017 A CN 105576017A
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 63
- 239000010409 thin film Substances 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 229960001296 zinc oxide Drugs 0.000 claims description 55
- 230000004888 barrier function Effects 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 37
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 59
- 238000000137 annealing Methods 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 8
- 239000011241 protective layer Substances 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 2
- 238000006356 dehydrogenation reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a thin-film transistor based on a zinc oxide thin film. The thin-film transistor comprises a semiconductor channel layer, gate insulating layers, a source electrode, a drain electrode and a gate electrode. According to the thin-film transistor based on the zinc oxide thin film, the zinc oxide thin film acts as the semiconductor channel layer, a top gate structure is adopted and the double gate insulating layers are adopted, and the first insulating layer of the gate insulating layers acts as the protective layer of the zinc oxide thin film so that the zinc oxide thin film can be effectively protected from being influenced by the environment or the subsequent technology. Multiple times of rapid annealing under the oxygen atmosphere is performed so that carrier concentration of the zinc oxide thin film can be effectively controlled and thus cut-off of the thin-film transistor can be realized under gate electrode bias voltage of being close to 0V. Besides, dehydrogenation processing is performed on the zinc oxide thin film, and the defects of the interface of the semiconductor channel layer and the insulating layers are restored so that electrical stability of the thin-film transistor can be greatly enhanced.
Description
Technical field
The present invention relates to technical field of semiconductor device, be specifically related to a kind of thin-film transistor based on zinc-oxide film.
Background technology
In recent years, along with popularizing rapidly of the mobile terminal such as smart mobile phone and panel computer, and the development of high-clear display, the requirement of people to Display Technique is more and more higher, such as large scale, high-contrast, high-resolution, low-power consumption, high aperture etc.Thin-film transistor is as the pixel cell control switch parts of liquid crystal panel (LCD) and Organic Light Emitting Diode (OLED) display floater, and the impact of its performance on screen display technology is most important.The thin-film transistor that traditional liquid crystal panel adopts mainly contains two kinds, one is amorphous silicon film transistor, because its cost is low and technology relative maturity, be thus most widely used, but the mobility of amorphous silicon material is very low (is generally less than <1cm
2/ Vs), lack of homogeneity, causes the power consumption of amorphous silicon display floater large, in addition because silicon materials are responsive to visible ray, easily produce photo-generated carrier, need in liquid crystal panel, to install black matrix additional to shield backlight, which increase manufacturing cost and technical difficulty, also can reduce yields.What another kind of application was more is low-temperature polysilicon film transistor, and the mobility of polysilicon is high (can reach 100cm
2/ Vs), reduce display power consumption, but polysilicon is equally to photaesthesia, in addition need to adopt the mode of quasi-molecule laser annealing to make silicon recrystallization owing to preparing polysilicon, process costs is high, and due to the restriction of process technique, the volume production of large scale low tempterature poly silicon also cannot be realized at present.
The people such as Nomura in 2003 have delivered the high performance thin film transistor device based on multi-element metal oxide on Nature, MOS transistor becomes study hotspot gradually, comprise tin indium oxide, indium gallium zinc oxide, zinc oxide etc., and wherein zinc oxide as a kind of binary oxide, because its structure is simple, rich content, the feature that cost is low, receive increasing concern, become the important selection replacing silicon in following Display Technique field.Zinc oxide is a kind of wide-band gap material, and energy gap is about 3.37eV, to visible transparent, and is easy to produce high-quality film at relatively low temperature, and current zinc oxide thin-film transistor can obtain performance relatively preferably, such as up to 60cm
2the mobility of/Vs, more than 10
7on-off ratio, close to the cut-in voltage etc. of 0V.
But at present two main difficult problems are also faced for zinc oxide thin-film transistor practical.First be that the zinc-oxide film that evaporating deposition technique obtains has higher carrier concentration usually, cause device to be difficult to realize turning off within the scope of suitable grid voltage.Another problem is that zinc-oxide film is very responsive to the moisture in air, lacks rational structural design and encapsulation all will cause device performance to be degenerated rapidly even losing performance.In order to improve the electric property of zinc oxide thin-film transistor, researcher had done considerable work, but did not also have the research that can solve zinc oxide thin-film transistor stability very well to occur.Such as, the overwhelming majority is all bottom grating structure about the report of zinc oxide thin-film transistor, in this structure, zinc-oxide film is directly exposed in air, be convenient to process semiconductor layer, as annealing, ion implantation etc., to improve its performance, but due to the sensitiveness of zinc oxide, the device of this structure cannot be practical.On the other hand; also the research of the zinc oxide thin-film transistor of minority top gate structure is had to report; in such an embodiment, how in follow-up photoetching and wet etching, to protect zinc oxide material, and the boundary defect how reducing zinc oxide material and insulating barrier is two problems urgently to be resolved hurrily.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of thin-film transistor based on zinc-oxide film that can realize high stability, high reliability and high mobility.
The present invention proposes a kind of thin-film transistor based on zinc-oxide film, comprise the gate insulation layer of semiconductor channel layer, source electrode, drain electrode, grid and bilayer, adopt the device architecture of top grid and staggered electrode, the structure of staggered electrode and finger source electrode and drain electrode are below semiconductor channel layer, grid is positioned at the top of semiconductor channel layer, gate insulation layer is by semiconductor channel layer and gate isolation, comprise the first insulating barrier and the second insulating barrier double-decker, first insulating barrier directly contacts with semiconductor channel layer, and described semiconductor channel layer adopts zinc-oxide film.Described zinc-oxide film is the N-shaped conductive film of monocrystalline or heteromorphs
In the present invention, first insulating barrier of thin-film transistor is positioned at the top of semiconductor channel layer, directly contact with zinc-oxide film, because when alundum (Al2O3) film contacts with zinc-oxide film, the defect of interface is relatively less, alundum (Al2O3) thus can be selected as the material of the first insulating barrier.Second insulating barrier of thin-film transistor then can adopt the materials such as alundum (Al2O3), hafnium oxide, silicon dioxide, silicon nitride.
First insulating barrier of thin-film transistor is as the protective layer of zinc-oxide film; when etched thin film transistors channel region; semiconductor channel layer is carried out photoetching and wet etching together with the first insulating barrier; zinc oxide semiconductor layer can be effectively protected not to be subject to the impact of external environment condition and PROCESS FOR TREATMENT; ensure that the good contact of semiconductor channel layer and insulating barrier simultaneously, reduce interface defect density.
The first described thickness of insulating layer is 9 to 15nm, so that method using fast wet etching, reduces the impact on the side direction undercutting of its lower semiconductor channel layer in etching.
After deposition obtains zinc-oxide film, short annealing under oxygen atmosphere is carried out to it, the resistivity of zinc oxide semi-conductor channel layer is controlled 1 × 10
5Ω cm to 1 × 10
7between Ω cm.
After wet etching obtains channel region, carry out short annealing under second time oxygen atmosphere, hydrogenation treatment is gone to zinc oxide semiconductor layer, repair the defect at part channel layer and interfacial dielectric layer place simultaneously.
After having deposited the second insulating barrier, carry out short annealing under third time oxygen atmosphere, recrystallization is carried out to second layer insulating barrier, repair internal flaw, in follow-up gate lithography step, improve insulating barrier to the resistance to corrosion of alkaline-based developer, reduce the generation of electric leakage.
In the present invention, source electrode, the drain and gate of described thin-film transistor all can adopt the metal or metal alloy with stronger resistance to corrosion, as gold, platinum, titanium etc., and the transparent conductive oxide of amorphous or heteromorphs, as the zinc oxide etc. of tin indium oxide, adulterated al.
The substrate material of thin-film transistor can be following one of them, but be not limited to following several, glass, quartz, monocrystalline silicon piece etc. also can be the stainless steels covering electric insulation layer.
Compared with prior art; the advantage of the thin-film transistor based on zinc-oxide film of the present invention is; adopt top gate structure; and add double-deck gate insulation layer; first insulating barrier is as protective layer; effectively protect the impact of semiconductor channel layer not by external environment condition and subsequent technique in follow-up processing step, the second insulating barrier serves further to isolate channel layer and the effect of packaging protection.By the quick thermal annealing process under three oxygen atmosphere, the carrier concentration of zinc oxide semi-conductor channel layer is effectively controlled, makes the cut-in voltage of thin-film transistor control at about 0V; The defect at channel layer and interfacial dielectric layer place is repaired, and hydrogenization is played to zinc oxide, the stability of thin-film transistor is improved greatly; Second layer insulating barrier internal flaw is repaired, improves its internal crystallographic structure, in the technique of follow-up photoetched grid, the corrosion resistance of alkaline-based developer is strengthened, decreases the generation of electric leakage.Uniformity is good, the zinc oxide thin-film transistor of high stability, high reliability, high mobility to adopt the process of the present invention's proposition and device architecture to produce, significant improvement and raising are made to the practical of zinc oxide thin-film transistor, has provided powerful support for for high definition display of future generation, Flexible Displays and Transparence Display technology provide.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of described top-grate structure thin film transistor;
Fig. 2 is the cross-sectional view of carrying out short annealing process on source-drain electrode after depositing zinc oxide film;
Fig. 3 is depositing first insulator layer carry out the cross-sectional view of annealing in process after etching active area on zinc-oxide film;
Fig. 4 is the cross-sectional view of carrying out annealing in process continue deposition second insulating barrier on the first insulating barrier after;
Fig. 5 is deposition of gate cross-sectional view after transition diagram over the second dielectric;
Fig. 6 is the transfer characteristic curve of the thin-film transistor of described embodiment;
Symbol description in figure:
Embodiment
In order to make object of the present invention, technical scheme and advantage set forth clearly, below in conjunction with drawings and Examples, the present invention is described in further detail.
The structural representation of the thin-film transistor based on zinc-oxide film of the present embodiment as shown in Figure 1; adopt the structure of top grid and staggered electrode; comprise substrate 1, source electrode 2 and drain electrode 3, semiconductor channel layer 4, first insulating barrier 5, second insulating barrier 6, grid 7 and passivation insulation 8 from bottom to up successively; the shape of the first insulating barrier 5 is consistent with semiconductor channel layer 4 shape; as the protective layer of semiconductor channel layer 4, source electrode 2, drain electrode 3 and grid 7 lead to outside passivation insulation 8 respectively by source metal lead-in wire 10, drain metal lead-in wire 11 and gate metal lead-in wire 9.In the present embodiment, the length of the raceway groove of thin-film transistor and width are 20 μm.
The material of wherein said substrate 1 is glass or quartz, the material of source electrode 2 and drain electrode 3 is chromium gold double-level-metal, the thickness of chromium layer gold is respectively 5nm and 60nm, the material of semiconductor channel layer 4 is the N-shaped zinc oxide conductive thin film of monocrystalline or heteromorphs, thickness is 20nm, the material of the first insulating barrier 5 is alundum (Al2O3), thickness is 10nm, the material of the second insulating barrier 6 is alundum (Al2O3), thickness is 20nm, and the material of grid 7 is gold, and thickness is 60nm, the material of passivation insulation 8 is silicon dioxide, and thickness is 300nm.
As shown in Figure 1, described thin-film transistor is top grid and staggered electrode configuration, and grid 7 is positioned at the top of semiconductor channel layer 4, and source electrode 2 and drain electrode 3 are positioned at below semiconductor channel layer 4.
As shown in Figure 1, the semiconductor channel layer 4 of thin-film transistor is overlapping with the source electrode 2 below it and 3 difference that drain, and each lap width l is identical, is 20 μm.
The resistivity of the zinc oxide semi-conductor channel layer 4 of described thin-film transistor is 8 × 10
5Ω cm.
A kind of concrete structure of the thin-film transistor based on zinc-oxide film that the present invention proposes can be prepared through but not limited to following methods:
(1) one deck chromium gold thin film is deposited on substrate 1, and by the figure of stripping technology transfer source electrode 2 with drain electrode 3, then deposition one deck zinc-oxide film is continued as semiconductor channel layer 4, as shown in Figure 2, and short annealing zinc oxide semi-conductor channel layer 4 carried out under oxygen atmosphere, with the carrier concentration of controlled oxidization zinc film;
(2) in the structure shown in Fig. 2, deposit the protective layer of one deck alundum (Al2O3) film as semiconductor channel layer 4, i.e. the first insulating barrier 5, then together wet etching is carried out to semiconductor channel layer 4 and the first insulating barrier 5 above thereof, transfer obtains the figure of active area (channel region), as shown in Figure 3, short annealing under oxygen atmosphere is then carried out; Semiconductor channel layer is carried out photoetching and wet etching together with the first insulating barrier, zinc oxide semiconductor layer can be effectively protected not to be subject to the impact of external environment condition and PROCESS FOR TREATMENT, ensure that the good contact of semiconductor channel layer and insulating barrier simultaneously, reduce interface defect density; Carry out annealing under oxygen atmosphere after etching and can go hydrogenation treatment to zinc oxide semiconductor layer, repair the defect at part channel layer and interfacial dielectric layer place simultaneously;
(3) in the structure shown in Fig. 3, continue second insulating barrier 6 of deposition one deck alundum (Al2O3) as thin-film transistor, as shown in Figure 4, then short annealing under oxygen atmosphere is carried out, recrystallization can be carried out to the second insulating barrier, repair internal flaw, in follow-up gate lithography step, improve insulating barrier to the resistance to corrosion of alkaline-based developer, reduce the generation of electric leakage;
(4) in the structure shown in Fig. 4, deposition one deck gold thin film is continued, by the figure of stripping technology transfer gate 7, as shown in Figure 5;
(5) in the structure shown in Fig. 5, continue the passivation insulation 8 of deposition one layer insulating as described thin-film transistor; protection device; as shown in Figure 1; and utilizing the technique of wet etching to etch lead hole afterwards in passivation insulation 8; source electrode 2, drain electrode 3 and grid 7 part are exposed; then continue deposition layer of metal, obtain gate metal lead-in wire 9, source metal lead-in wire 10 and drain metal lead-in wire 11 by stripping technology.
Semiconductor channel layer 4, first insulating barrier 5 and the second insulating barrier 6 all can be obtained by deposition techniques such as ald, magnetron sputtering, pulsed laser deposition, chemical vapour deposition (CVD)s, and this embodiment adopts technique for atomic layer deposition.
Source electrode 2, drain electrode 3 and the metal level of grid 7 all can be obtained by deposition techniques such as thermal evaporation, electron beam evaporation, magnetron sputterings, and in this embodiment, chromium thin film adopts electron-beam evaporation to form, and gold thin film adopts thermal evaporation deposition to obtain.
Process manufacturing technology needed for technological process described in Fig. 1 to Fig. 5 and traditional flat panel display manufacturing process technology are compatible, such as chemical vapour deposition (CVD), magnetron sputtering, photoetching technique etc.
Figure 6 shows that the transfer characteristic curve of the thin-film transistor based on zinc-oxide film that the present embodiment obtains, continuous 5 scanning transfer characteristic curves are carried out to device, cut-in voltage V
oNvariable quantity be less than 0.1V, device has excellent electrical stability.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (7)
1. the thin-film transistor based on zinc-oxide film, comprise semiconductor channel layer, source electrode, drain electrode, grid and gate insulation layer, it is characterized in that, described thin-film transistor adopts top grid and staggered electrode configuration, semiconductor channel layer is zinc-oxide film, and gate insulation layer is between semiconductor channel layer and grid, comprise the first insulating barrier and the second insulating barrier, the first insulating barrier directly contacts with semiconductor channel layer.
2. the thin-film transistor based on zinc-oxide film according to claim 1, is characterized in that, the first described insulating barrier covers the top of semiconductor channel layer, and shape and semiconductor channel layer keep overlapping, and the thickness of the first insulating barrier is 9 to 15nm.
3. the thin-film transistor based on zinc-oxide film according to claim 1, is characterized in that, the width l of the lap of described semiconductor channel layer and source electrode below it and drain electrode is identical, is 10 to 20 μm.
4. the thin-film transistor based on zinc-oxide film according to claim 1, is characterized in that, the resistivity of described semiconductor channel layer is 1 × 10
5Ω cm to 1 × 10
7between Ω cm.
5. the thin-film transistor based on zinc-oxide film according to claim 1, is characterized in that, the zinc-oxide film that described semiconductor channel layer adopts is the N-shaped conductive film of monocrystalline or heteromorphs.
6. the thin-film transistor based on zinc-oxide film according to claim 1, is characterized in that, the material that the first described insulating barrier uses is alundum (Al2O3).
7. the thin-film transistor based on zinc-oxide film according to claim 1, is characterized in that, the material that described second insulating barrier uses is alundum (Al2O3), one in hafnium oxide, silicon dioxide, silicon nitride.
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| CN201510939432.3A CN105576017B (en) | 2015-12-15 | 2015-12-15 | A kind of thin film transistor (TFT) based on zinc-oxide film |
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|---|---|---|---|
| CN201510939432.3A CN105576017B (en) | 2015-12-15 | 2015-12-15 | A kind of thin film transistor (TFT) based on zinc-oxide film |
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| CN106374044A (en) * | 2016-11-02 | 2017-02-01 | 杭州潮盛科技有限公司 | Semiconductor structure and fabrication method thereof |
| CN107564844A (en) * | 2017-07-28 | 2018-01-09 | 韩华新能源（启东）有限公司 | A kind of graphite boat saturation double membrane structure and coating process and graphite boat |
| CN110233156A (en) * | 2019-07-05 | 2019-09-13 | 深圳市华星光电半导体显示技术有限公司 | The production method and thin film transistor base plate of thin film transistor base plate |
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| CN105870135A (en) * | 2016-05-19 | 2016-08-17 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
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| CN110660864A (en) * | 2018-06-29 | 2020-01-07 | 山东大学苏州研究院 | High-frequency semiconductor thin film field effect transistor and preparation method thereof |
| CN110660864B (en) * | 2018-06-29 | 2024-06-21 | 山东大学苏州研究院 | Preparation method of high-frequency semiconductor thin film field effect transistor |
| CN110233156A (en) * | 2019-07-05 | 2019-09-13 | 深圳市华星光电半导体显示技术有限公司 | The production method and thin film transistor base plate of thin film transistor base plate |
| WO2023108762A1 (en) * | 2021-12-13 | 2023-06-22 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor and manufacturing method therefor, and display panel |
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