CN104103708A - Back electrode back electric field structure design method for improving open circuit voltage - Google Patents
Back electrode back electric field structure design method for improving open circuit voltage Download PDFInfo
- Publication number
- CN104103708A CN104103708A CN201310111027.3A CN201310111027A CN104103708A CN 104103708 A CN104103708 A CN 104103708A CN 201310111027 A CN201310111027 A CN 201310111027A CN 104103708 A CN104103708 A CN 104103708A
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- CN
- China
- Prior art keywords
- electric field
- back electrode
- electrode
- aperture
- open circuit
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- 230000005684 electric field Effects 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 10
- 241000258920 Chilopoda Species 0.000 claims abstract description 3
- 230000001737 promoting effect Effects 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a back electrode back electric field structure design method for improving the open circuit voltage. A back electrode structure and a matched back electric field structure are comprised. The back electrode structure is composed of two or three electrodes. Each electrode is composed of a whole electrode or a plurality of segmented electrodes. Each electrode is provided with square or round holes which are arranged separately and in order. The hole design scheme of the back electric field is the same as the back electrode, but the size of the holes in the back electric field ad the distance between the holes and the edge is larger than the design of the back electrode at the position by 0.1-0.2mm on average. The width of a region coated with photo-sensitive resist is slightly larger than the width of the back electrode structure when 'centipede feet' are removed. The holes are used as back electric field regions. The method of the invention has the following advantages that the purposes of increasing the back field area, improving the open circuit voltage and the photovoltaic conversion efficiency of a battery piece and reducing the manufacture cost can be achieved.
Description
Technical field
The present invention relates to the manufacture technology field of crystal silicon solar batteries sheet, relate to particularly a kind of method for designing of carrying on the back electric field structure for promoting the back electrode of open circuit voltage.
Background technology
In the manufacturing process of crystal silicon solar batteries, reach the object of collected current by screen-printed metal electrode, wherein metal electrode comprises positive electrode and back electrode.The back side of crystal silicon solar batteries is made up of back of the body electric field and back electrode.Conventionally adopt P type base material business and spread phosphorus formation PN junction, the inner n/p-p+ type structure that forms of cell piece after making aluminium back surface field.Due to the special construction that back of the body electric field forms, reduce the photoelectronic back side compound, can improve the output photoelectric stream of battery; Reduce on the other hand reverse saturation current I
0.In addition, due to the existence of p/p+ contact berrier, the compound of surface of also prevention p district light induced electron being supported or opposed, thus reduce the recombination velocity of back of the body surface to light induced electron.Arrive the photo-generated carrier of p/p+ knot both sides also by the internal field of being tied by p/p+ separately, and set up photovoltage, can improve the open circuit voltage U of battery
oc; The existence in p+ district can be made good ohmic contact.
The back electrode of crystal silicon solar batteries, owing to directly contacting with silicon chip surface, forms a large amount of complex centres at silicon chip surface, affects the photoelectric conversion efficiency of silicon solar cell.Therefore back electrode of solar cell is optimized, and makes it to match with the design of carrying on the back electric field, reduced the impact of back electrode on electrical performance of cell, reduce cost of manufacture, improve the efficiency of solar cell.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method for designing of carrying on the back electric field structure for promoting the back electrode of open circuit voltage.
In order to solve the problems of the technologies described above, the technical solution used in the present invention comprises back electrode and the structural design of the back of the body electric field that mates with it.
Described back electrode structure is made up of two or three electrodes, every electrode is whole piece or some segmented electrodes composition, on every electrode, design the square or circular aperture of ordered arrangement, adjacent two row's apertures alternately, the quantity of adjacent two row's apertures is n and n-1, and the quantity n of aperture is more than or equal to 3 and is less than or equal to 2.
Described back of the body electric field structure, the aperture design of back of the body electric field is identical with back electrode, but the size 22 of aperture in back of the body electric field ' ', upper and lower two ends aperture to the distance 11 at edge ', have the edge aperture of this individual round of n-1 to the distance 55 at two ends, left and right ', with back electrode equal large 0.1～0.2mm compared with the design size at this place, and the width A ' that scribbles photoresists region is slightly larger than in back electrode structure the width A that removes " centipede pin ", the slurry that printed by these aperture places is identical with back of the body electric field.
The invention has the beneficial effects as follows by a kind of method for designing of carrying on the back electric field structure for promoting the back electrode of open circuit voltage is provided, reach and increase back surface field area, promote open circuit voltage and the photoelectric conversion efficiency of cell piece, reduce the object of manufacturing cost.
Brief description of the drawings
The back electrode structure providing in Fig. 1 the present invention
In figure: 11 represent that the aperture at upper and lower two ends is to the distance at edge; 22 represent the size of aperture; 33 represent adjacent two aperture pitch of same row; 44 represent adjacent two row's aperture pitch; 55 represent that the aperture at two ends, left and right is to the distance at edge; 66 representative back of the body electric field regions; 77 represent back electrode region
The back of the body electric field providing in Fig. 2 the present invention and back electrode overall structure
In figure: 1 and 2 representative back of the body electric field regions; 3 represent back electrode region; The project organization in back electrode region in electric fields is carried on the back in 4 representatives
The partial structurtes of the back of the body electric field providing in Fig. 3 the present invention
In figure: black region representative back of the body electric field half tone is coated with photoresists; White portion represents slurry permeable areas; 11 ' represent that the aperture at upper and lower two ends is to the distance at edge; 22 ' represent the size of aperture; 55 ' represent that the aperture at two ends, left and right is to the distance at edge.
Embodiment
Below in conjunction with accompanying drawing 1, accompanying drawing 2 and accompanying drawing 3, technical scheme provided by the invention is described in further detail.
In present embodiment, adopt the polysilicon solar battery slice of 156mm × 156mm.
The design of back electrode is as follows in the present embodiment: in back electrode, the shape of aperture is designed to square, the length of each aperture is 0.4 ± 0.05mm, the spacing 44 of adjacent two row's apertures is 0.6 ± 0.05mm, the aperture at two ends, left and right is 0.9 ± 0.05mm to the distance 55 at edge, the aperture at upper and lower two ends is 1.3 ± 0.05mm to the distance 11 of two edges, and same row is adjacent, and two aperture pitch 33 are 0.6 ± 0.05mm.
The design of carrying on the back in the present embodiment electric field is as follows: in back of the body electric field, the edge of back of the body electric field is 0.5 ± 0.05mm to the distance of silicon chip edge, and up and down the aperture at two ends is to the distance 11 at edge ' be 1.4 ± 0.05mm; Aperture is of a size of 0.6 ± 0.05mm; The aperture at two ends, left and right is to the distance 55 at edge ' be 1.0 ± 0.05mm, and same row is adjacent, and two aperture pitch are 0.4 ± 0.05mm.
Claims (5)
1. a method for designing of carrying on the back electric field structure for promoting the back electrode of open circuit voltage, the back of the body electric field structure that comprises back electrode structure and match with it, it is characterized in that: in back electrode structure, design some rows small structure alternately, and using these apertures as back of the body electric field region.
2. a kind of method for designing of carrying on the back electric field structure for promoting the back electrode of open circuit voltage according to claim 1, it is characterized in that: described back electrode structure is made up of two or three electrodes, every electrode is whole piece or some segmented electrodes composition, on every electrode, design the square or circular aperture of ordered arrangement, adjacent two row's apertures alternately.
3. back electrode structure according to claim 2, is characterized in that: the quantity of every row's aperture is n and n-1, and the quantity n of aperture is more than or equal to 3 and is less than or equal to 2.
4. a kind of method for designing of carrying on the back electric field structure for promoting the back electrode of open circuit voltage according to claim 1, is characterized in that: described back of the body electric field structure, the aperture design of back of the body electric field is identical with back electrode.
5. back of the body electric field structure according to claim 4, it is characterized in that: the size 22 of aperture in back of the body electric field ' ', upper and lower two ends aperture to the distance 11 at edge ', have the edge aperture of this individual round of n-1 to the distance 55 at two ends, left and right ', with the design size all large 0.1～0.2mm of back electrode at this place, the width A ' that scribbles photoresists region is slightly larger than in back electrode structure the width A that removes " centipede pin ".
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310111027.3A CN104103708B (en) | 2013-04-02 | 2013-04-02 | Back electrode back electric field structure design method for improving open circuit voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310111027.3A CN104103708B (en) | 2013-04-02 | 2013-04-02 | Back electrode back electric field structure design method for improving open circuit voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104103708A true CN104103708A (en) | 2014-10-15 |
| CN104103708B CN104103708B (en) | 2017-02-08 |
Family
ID=51671686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310111027.3A Active CN104103708B (en) | 2013-04-02 | 2013-04-02 | Back electrode back electric field structure design method for improving open circuit voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104103708B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111002701A (en) * | 2019-11-05 | 2020-04-14 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200972863Y (en) * | 2006-11-07 | 2007-11-07 | 江阴浚鑫科技有限公司 | Zigzag crystal silicon solar batter back electrode |
| CN101106163A (en) * | 2007-05-31 | 2008-01-16 | 荀建华 | Rear electrode for crystal silicon solar battery |
| JP2012023290A (en) * | 2010-07-16 | 2012-02-02 | Fuji Electric Co Ltd | Method for manufacturing thin film solar cell |
| CN202153522U (en) * | 2011-07-05 | 2012-02-29 | 浙江鸿禧光伏科技股份有限公司 | Back electrode capable of reducing unit consumption |
-
2013
- 2013-04-02 CN CN201310111027.3A patent/CN104103708B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200972863Y (en) * | 2006-11-07 | 2007-11-07 | 江阴浚鑫科技有限公司 | Zigzag crystal silicon solar batter back electrode |
| CN101106163A (en) * | 2007-05-31 | 2008-01-16 | 荀建华 | Rear electrode for crystal silicon solar battery |
| JP2012023290A (en) * | 2010-07-16 | 2012-02-02 | Fuji Electric Co Ltd | Method for manufacturing thin film solar cell |
| CN202153522U (en) * | 2011-07-05 | 2012-02-29 | 浙江鸿禧光伏科技股份有限公司 | Back electrode capable of reducing unit consumption |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111002701A (en) * | 2019-11-05 | 2020-04-14 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
| CN111002701B (en) * | 2019-11-05 | 2021-08-24 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104103708B (en) | 2017-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province Applicant after: ZHEJIANG FORTUNE ENERGY CO., LTD. Address before: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province Applicant before: Zhejiang Fortune Photovoltaic Co.,Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: ZHEJIANG FORTUNE PHOTOVOLTAIC CO.,LTD. TO: ZHEJIANG HONGXI ENERGY CO., LTD. |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |