CN104103554B - Energy line irradiation system and workpiece conveying mechanism - Google Patents
Energy line irradiation system and workpiece conveying mechanism Download PDFInfo
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- CN104103554B CN104103554B CN201310567012.8A CN201310567012A CN104103554B CN 104103554 B CN104103554 B CN 104103554B CN 201310567012 A CN201310567012 A CN 201310567012A CN 104103554 B CN104103554 B CN 104103554B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides energy line irradiation system and workpiece conveying mechanism, can significantly improve productivity, and help to effectively utilize energy line.Energy line irradiation system includes energy line ejecting mechanism and the workpiece for irradiating the energy line（W）In defined work delivery region and the irradiation area of energy line（AR）Between the work support that conveys（21）, the work delivery region is arranged on across by the irradiation area（AR）Virtual line（C）Two opposite positions, and it is used as the work support（21）It is provided with：First work support（21（1））, in the work delivery region of a side and the irradiation area（AR）Between move；And second workpiece stent（21（2））, in the work delivery region of the opposing party and the irradiation area（AR）Between move.
Description
Technical field
The present invention relates to it is as shown in ion implant systems or electron beam irradiation system etc., to as target workpiece irradiation
The energy line irradiation system and the workpiece conveying mechanism for it of energy line.
Background technology
In previous this ion implant systems, intermediate carrier structure is provided with, for chip to be transported to ion
Transmission wafer between the platen and load-lock chambers of the irradiation area of beam.For example, the left and right of the intermediate carrier structure of patent document 1
Conveying arm can act simultaneously, quickly wafer configuration on two row on a platen, it is possible thereby to realize raising device
Processing capacity, you can to realize raising productivity.
Existing technical literature
Patent document 1：Japan Patent bulletin Te Xu 4766156
But in the structure, after to some wafer illumination (injection) ion beam, to wafer illumination from
Until beamlet, the considerable time wasted, when further to improve productivity, the time wasted are generated
Become its bottleneck.
If illustrating, after to wafer illumination (ion implanting) ion beam, to not carrying out ion implanting
Until next wafer illumination ion beam, the chip completion ion implanting is needed to be transported to outside by load-lock chambers,
Next chip is carried to from outside by load-lock chambers on platen, and the process for being transported to the irradiation area of ion beam, institute
Stating the time wasted becomes considerably long, has ill effect to productivity, and ion beam is consumed in vain therebetween.
This problem is not only ion implantation apparatus presence, and this problem is in the energy to workpiece irradiation energy line
The problem of being common in amount beam irradiating apparatus entirety.
Invention content
In view of the problem of described, the purpose of the present invention is in the energy line irradiation system, significantly improve production
Rate, and help to effectively utilize energy line.
That is, the present invention provides a kind of energy line irradiation system, including：Energy line ejecting mechanism, to defined irradiated region
Project energy line in domain；And work support, it conveys to be used as between defined work delivery region and the irradiation area and be shone
The workpiece of the target of the energy line is penetrated, the work delivery region is arranged on across opposite two position of virtual line,
The virtual line is provided with by the irradiation area of the energy line as the work support：First work support is being made
Conveying workpieces between the first work delivery region in the work delivery region for a side and the irradiation area；And second workpiece
Stent, as conveying workpieces between the second workpiece handover region in the work delivery region of the opposing party and the irradiation area,
To during being transported to the workpiece irradiation energy line of irradiation area by the work support of a side, pass through the work of the opposing party
The workpiece that completion energy line irradiates is exchanged into non-irradiated workpiece and is kept by part stent, in the workpiece by a side
After the workpiece that stent terminates energy line irradiation is kept out of the way, by the work support of the opposing party lower batch of non-irradiation energy line
Workpiece be transported to irradiation area, start irradiation energy line.
According to the energy line irradiation system, since irradiation area can be transported to the work support by a side
During workpiece irradiation energy line, the workpiece that completion energy line irradiates is exchanged by the work support of the opposing party by non-irradiated work
Part is simultaneously kept, so after keeping out of the way the workpiece that energy line irradiation terminates by the work support of a side, it can be by another
The workpiece of lower batch of non-irradiation energy line is rapidly transported to irradiation area by the work support of one side, starts irradiation energy line.
I.e., it is proposed, according to the invention, due to can be greatly shortened from after to a collection of workpiece irradiation energy line to lower batch
Workpiece irradiation energy line until time, it is possible to significantly improve productivity, and can more effectively utilize energy
Line.
For the versatility that can be handled various sizes of workpiece, improve system, it is preferred that first work support
The mutually different workpiece with the second workpiece stent energy delivery size.In more detail, can be each work support ruler
Very little respectively different workpiece blending transportation；Can also be the workpiece that same size is conveyed in a work support, but one
Work support is different with the workpiece size that other work supports can convey.
Energy line ejecting mechanism and work support configuration is indoor in the energy line irradiation of vacuum degree as defined in holding
In the case of, the workpiece placement section in load-lock chambers is set sometimes, for placing the non-irradiation energy line moved in from outside halfway
Workpiece and to move the external workpiece for completing energy line irradiation to.
In this case, in order to be applicable in the present invention, it is ensured that productivity, it is preferred that be arranged on the workpiece placement section
Across two opposite positions of the virtual line；And it sets：First transfer member, in the first work delivery region and
Conveying workpieces between the first workpiece placement section；And second transfer member, in the second workpiece handover region and described
Conveying workpieces between second workpiece placement section.
As putting forward large-duty concrete mode as far as possible, it is preferred that the energy line irradiation system further includes：It is intermediate
Workpiece placement section is arranged between the first workpiece placement section and the second workpiece placement section；Third transfer member, in institute
State conveying workpieces between the first work delivery region and the intermediate piece placement section；And the 4th transfer member, described
Conveying workpieces between two work delivery regions and the intermediate piece placement section.
In the structure, in order to handle various sizes of workpiece, it is preferred that each transfer member energy delivery size
Mutually different workpiece.
In order to simplify the structure of transfer member, it is preferred that the work support is in the work delivery region from conveying
After component receives workpiece, mobile predetermined distance receives other workpiece from the transfer member, thus, it is possible to put in the direction of movement
Put multiple row workpiece.
As the especially significant embodiment of effect of the present invention, what can be enumerated is that the energy line is ion beam, to
Workpiece injects ion.
According to the present invention of the composition, due to that after to initial workpiece irradiation energy line, can get started
To the workpiece irradiation energy line of lower batch, it is possible to productivity is increased substantially, and the time for consuming energy line in vain is short, because
This can efficiently utilize energy line.
Description of the drawings
Fig. 1 is the overall top view for the ion implantation apparatus for schematically showing first embodiment of the invention.
Fig. 2 is the partial perspective view for the wafer transport mechanism for representing first embodiment.
Fig. 3 is the process chart for the chip conveying operation example for representing first embodiment.
Fig. 4 is the process chart for the chip conveying operation example for representing first embodiment.
Fig. 5 is to represent the ion implanting of first embodiment and the sequence diagram on chip conveying opportunity.
Fig. 6 is to represent the ion implanting of first embodiment and the sequence diagram on chip conveying opportunity.
Fig. 7 is the overall top view for the ion implantation apparatus for schematically showing second embodiment of the invention.
Fig. 8 is the process chart for the chip conveying operation example for representing second embodiment.
Fig. 9 is the process chart for the chip conveying operation example for representing second embodiment.
Reference sign
100 ... energy line irradiation systems (ion implantation apparatus)
W ... workpiece
21 ... platens (work support)
AR ... irradiation areas
12 ... workpiece placement stations (workpiece placement section)
31 ... conveying arms
C ... virtual lines
Specific embodiment
First embodiment
With reference to the accompanying drawings to the ion implant systems 100 of the energy line irradiation system as first embodiment of the invention
It illustrates.In addition in the following description and attached drawing, when component and construction of the same race are there are multiple and when needing to distinguish them,
(1), (2) etc. are enclosed at reference numeral end, and to component and construction title titled with first, second etc..
As shown in Figure 1, the ion implant systems 100 include：Ion beam ejecting device (does not represent) in figure, is setting
Ion beam IB is projected into the ion implantation chamber 10 of vacuum；Work transfer device 20, workpiece (being herein chip) W (1), W (2)
It is transported to the irradiation area AR for irradiating the ion beam IB so that ion beam IB irradiates workpiece W (1), W (2).
Ion beam ejecting device for example projects band-like ion beam IB towards the irradiation area AR.In addition, ion beam
The shape of IB be not limited to it is band-like, such as can also be square.In addition, the reference numeral " 9 " in Fig. 1 is for monitoring ion beam
The beam contourgraph of the intensity Distribution of IB etc. and block off-limits ion beam IB traveling component.
Work transfer device 20 includes：Workpiece discrepancy mechanism 1 (1), 1 (2), make workpiece W (1), W (2) in ion implantation chamber
It comes in and goes out between inside and outside 10；Workpiece W (1), the W (2) of ion to be injected are sent to the irradiated region of ion beam by workpiece conveying mechanism 2
Domain AR；Intermediate carrier structure 3 (1), 3 (2) come in and go out between the workpiece between mechanism 1 (1), 1 (2) and workpiece conveying mechanism 2,
Carry out the handing-over of workpiece W (1), W (2).
Each section of the work transfer device 20 is illustrated.
The workpiece discrepancy mechanism 1 (1), 1 (2) include：Prechamber 11 (1), 11 (2), it is adjacent with ion implantation chamber 10
Setting, also referred to as load-lock chambers；Workpiece placement station 12 (1), 11 (2) are workpiece placement sections；And device is driven upside down, scheming
In do not represent, move up and down workpiece placement station 12 (1), 11 (2).Detailed situation can be from the note of the patent document 1
It carries and understands, be briefly described herein, prechamber 11 (1), 11 (2) are formed in switchable upper cover and positioned at defined upper
Between the workpiece placement station 12 (1) put, 11 (2).Workpiece placement station 12 (1), 11 (2) can be multiple workpiece W (1), W
(2) row are positioned to, workpiece placement station 12 (1), 11 (2) also have pre- as airtightly blocking at the position on described
The function in the next door of vacuum chamber 11 (1), 11 (2) and ion implantation chamber 10, on the other hand, workpiece placement station 12 (1), 11 (2) exist
During positioned at defined lower position, in ion implantation chamber 10, become can with describing below intermediate carrier structure 3 (1),
Join the state of workpiece W (1), W (2) between 3 (2).
But in this embodiment, across by the irradiation area AR it is virtual line C, overlook be symmetrical
Position, be provided with pair of workpieces come in and go out mechanism 1 (1), 1 (2).Although the in addition, axis of virtual line C and ion beam IB here
Line is consistent, but the axis of virtual line C and ion beam IB is without centainly consistent.
The workpiece conveying mechanism 2 such as platen 21 (1), 21 (2), the bearing platen 21 including becoming work support
(1), the base station 22 (1) of 21 (2), 22 (2) and the straight line advance and retreat that the base station 22 (1), 22 (2) is made linearly to move forward and backward
Mechanism 23, defined work delivery region receive by describe below intermediate carrier structure 3 (1), 3 (2) conveying Lai workpiece W
(1), W (2), and workpiece W (1), W (2) are transported to the irradiation area AR or from the irradiation area AR workpiece W (1), W
(2) work delivery region is transported to, is transmitted to intermediate transport mechanism 3 (1), 3 (2).
Platen 21 (1), 21 (2) for example have the adsorption plate (not represented in figure) of flattened round shape, pass through electrostatic chuck
Workpiece W (1), the W (2) of bearing multiple row (being herein two row) can be adsorbed in one surface.In this embodiment, with institute
State pair of workpieces discrepancy mechanism 1 (1), 1 (2) are correspondingly provided with a pair of of platen 21 (1), 21 (2).
Base station 22 (1), 22 (2) are according to the block-like base station of each platen 21 (1), 21 (2) setting, in each platen 21
(1), the panel part of 21 (2) with it is described move forward and backward direction it is parallel in the state of, by with described to move forward and backward direction parallel
Rotation axis pivot suspension platen 21 (1), the base end part of 21 (2).Motor is internally provided in the base station 22 (1), 22 (2)
Waiting does not have the standing represented to fall down driver in figures, can make platen 21 (1), 21 (2) panel part as horizontality
Join posture and carry out erecting the rotation of falling down as between the ion beam irradiation posture of vertical state.
Straight line driving and reversing mechanism 23 for example including：A piece track component 231, by with the axis of ion beam IB it is at a right angle in a manner of
Horizontal linear shape is laid to, each base station 22 (1), 22 (2) are slidably chimeric with the track component 231, are
The shared component in each base station 22 (1), 22 (2)；Slide drive does not represent in figure, drives base station 22 (1), 22 (2)
It retreats independently of each other along track component 231.The slide drive in the figure that is located in track component 231 for example by not having table
The band that shows and make the motor drive mechanism that the band circumferentially rotates into base station 22 (1), 22 (2) are drawn by the band, thus make base station 22
(1), 22 (2) move forward and backward on track component 231.In addition, straight line driving and reversing mechanism 23 can not only have a structure in which, example
Screwfeed (ネ ジ send り) mechanism can also such as be utilized.In addition, the straight line advance and retreat direction is defined as x directions below.
Intermediate carrier structure 3 (1), 3 (2) include：Conveying arm 31 (1), 31 (2), as the quilt in a manner of it can rotate horizontally
The transfer member of pivot suspension base end part；And rotating driver, it does not represent in figure, is to make the conveying arm 31 (1), 31
(2) motor of forward or reverse etc., intermediate carrier structure 3 (1), 3 (2) are in the workpiece placement station 12 (1), 11 (2) and institute
State conveying workpieces W (1), W (2) between work delivery region.
Conveying arm 31 (1), 31 (2) are long strip-board shape, are not had in the figure using the downside for being located at the conveying arm 31 (1), 31 (2)
There is the gripping claw of expression, the opposite position of the peripheral edge portion in the face of the downside by tangling workpiece W (1), W (2), workpiece W
(1), W (2) be maintained at conveying arm 31 (1), 31 (2) downside.In this example, conveying arm 31 (1), 31 (2) can be along them
Multiple workpiece W (1), W (2) are kept into a row by extending direction.
Then, as shown in Figure 1, in this embodiment, being provided in position symmetrical centered on the virtual line C
The intermediate carrier structure 3 (1) of a pair, 3 (2) make them corresponding with each workpiece discrepancy mechanism 1 (1), 1 (2) respectively.In addition,
The virtual line direction is defined as y directions, and the direction vertical with x directions and y directions both sides is defined as z side below
To.
On the basis of the structure, this ion implant systems 100 further include：Multiple external accommodating containers 4, be configured from
The outside of sub- flood chamber 10；And external delivery mechanisms 5 (1), 5 (2), in the external accommodating container 4 and the prechamber
Conveying workpieces W (1), W (2) between 11 (1), 11 (2).
If illustrating, external accommodating container 4 so that multiple workpiece W (1), W (2) stored as the mode of multilayer it is multiple
Workpiece W (1), W (2), cleanliness factor as defined in the holding of inside.Here, it is disposed with multiple external accommodating containers 4 in the x-direction.
External delivery mechanisms 5 (1), 5 (2) have along the track 51 (1) in x directions, 51 (2) and along the track 51
(1), 51 (2) move forward and backward conveyor body 52 (1), 52 (2).The conveyor body 52 (1), 52 (2) have absorption work
Part W (1), the arm 521 (1) of W (2), 521 (2), it is mobile simultaneously along track 51 (1), 51 (2) using conveyor body 52 (1), 52 (2)
And adsorb workpiece W (1), W (2) by the arm 521 (1), 521 (2) and rotate, thus in external accommodating container 4 and forevacuum
Conveying workpieces W (1), W (2) between room 11 (1), 11 (2).In addition, it is taken out from some external accommodating container 4 and has carried out ion note
Workpiece W (1), W (2) group after entering returns to identical external accommodating container 4.
Then, in this embodiment, in opposite position centered on the virtual line C, the described of a pair is set
External delivery mechanisms 5 (1), 5 (2) make them corresponding with each workpiece discrepancy mechanism 1 (1), 1 (2) respectively.
The action of ion implant systems 100 formed as described above is illustrated referring to Fig. 3, Fig. 4.
For convenience of description, it is illustrated from the state shown in (i) of Fig. 3.
In the state of (i) of Fig. 3, the second platen 21 (2) is located at vertical at large-diameter workpiece W (2) for keeping two row
Posture (the ion beam irradiation posture), and positioned at the irradiation area AR, to workpiece W (2) irradiation ion beams IB.
On the other hand, the first platen 21 (1) is treated positioned at the first work delivery region with the handing-over posture (flat-hand position)
Machine, at this point, having caught the first conveying arm 31 of a row small diameter workpiece W (1) being placed in the first workpiece placement station 12 (1)
(1) state to come in moving in rotation.
In addition, the position that is, the first conveying arm 31 (1) rotates to the angle vertical with x-axis towards track component 231
Position be the first work delivery region in the embodiment.
In the state of (i) of the Fig. 3, i.e., if on the first platen 21 (1), catch the first conveying arm of workpiece W (1)
31 (1) rotational positionings, then the first platen 21 (1) for example make not have in figure the lifter pin represented to increase from below, make workpiece W (1)
It increases slightly, releases bearing of the gripping claw of the first conveying arm 31 (1) to workpiece W (1).Hereafter, the first conveying arm 31 (1) is from workpiece
Handover region is kept out of the way, and returns again to the first workpiece placement station 12 (1).
Declined by the lifter pin to be placed on the on the first platen 21 (1) by the workpiece W (1) of lifter pin bearing
On the position of one row, adsorbed and supported by electrostatic chuck.
On the other hand, it has been removed the first workpiece placement station 12 (1) after workpiece W (1) and has passed through the first workpiece discrepancy mechanism 1
(1) function is again introduced into prechamber 11 (1), 11 (2), and workpiece W is being had received again from the first external delivery mechanisms 5 (1)
(1) after, back to ion implantation chamber 10 in it is standby.
The first conveying arm 31 (1) come is returned from the first platen 21 (1), catches and is placed on the first workpiece placement station 12
(1) the new workpiece W (1) of the unimplanted ion on, returns again to the first work delivery region.
During this period, the first platen 21 (1) only moves about workpiece W's (1) by straight line driving and reversing mechanism 23 in the x direction
The distance between holding row are simultaneously standby.
As shown in (ii) of Fig. 3, reached after the rotation of the first conveying arm 31 (1), by action as hereinbefore, workpiece
W (1) is placed on the position of the secondary series on the first platen 21 (1), is adsorbed and supported by electrostatic chuck.The state is represented in Fig. 3
(iii) in.
As shown in (iv) of Fig. 3, keep as described above the first platen 21 (1) of two row workpiece W (1) as vertical from
Beamlet irradiation posture is simultaneously standby.
Hereafter, if the ion implanting of workpiece W (2) being supported on the second platen 21 (2) terminates, the second platen 21
(2) from virtual line C to second workpiece mounting table Slideslip, keep out of the way second workpiece handover region from irradiation area AR, and
Keep out of the way substantially simultaneously with described, the first platen 21 (1) for maintaining workpiece W (1) substitutes the second platen 21 (2), is moved to irradiation
Region AR starts to workpiece W (1) irradiation ion beams IB.
The second platen 21 (2) after keeping out of the way becomes to join posture from ion beam irradiation posture, in second workpiece handover region
It is standby.Second workpiece handover region is the position that the second conveying arm 31 (2) rotates to the angle vertical with x-axis, is set in and institute
The first work delivery region is stated across the opposite position of virtual line C.
As shown in (v) of Fig. 3, the second conveying arm 31 (2) rotates through the workpiece that first row is received from the second platen 21 (2)
W (2) is conveyed and is placed on second workpiece mounting table 12 (2).In addition, the second conveying arm 31 (2) is from the second platen 21 (2)
The step of receiving workpiece W (2) and the aforementioned step for workpiece W (2) being passed to from the second conveying arm 31 (2) the second platen 21 (2)
Suddenly on the contrary, so detailed description is omitted.
The workpiece W (2) of the completion ion implanting on second workpiece mounting table 12 (2) is placed on, is come in and gone out by second workpiece
Mechanism 1 (2) and the second external delivery mechanisms 5 (2), are transported in the external accommodating container 4 for storing workpiece W (2) originally.
During this period, the second platen 21 (2) passes through the only substantially travelling workpiece W (2) in the x direction of straight line driving and reversing mechanism 23
The distance between holding row are simultaneously standby.
Hereafter, as shown in (vi) of Fig. 3, the second empty conveying arm 31 (2) is again rotated through coming, and receives the workpiece W of secondary series
(2), workpiece W (2) is placed on second workpiece mounting table 12 (2).The workpiece W (2) is also by second workpiece discrepancy machine
Structure 1 (2) and the second external delivery mechanisms 5 (2), are transported in the external accommodating container 4 for storing workpiece W (2) originally.
Then, the workpiece W (2) of unimplanted ion passes through the second external delivery mechanisms 5 (2) and second workpiece discrepancy mechanism 1
(2), it is reapposed on second workpiece mounting table 12 (2).Workpiece W (1) is transported to according to first conveying arm 31 (1)
Step on first platen 21 (1) is transported on the second platen 21 (2) the workpiece W (2) (with reference to (vii)~Fig. 4 of Fig. 4
(ix)).
Hereafter, as shown in (x) of Fig. 4, the second platen 21 (2) for maintaining two row workpiece W (2) becomes the ion beam of vertical
Irradiation posture is simultaneously standby.
Then, after the ion implanting of workpiece W (1) being supported on the first platen 21 (1) terminates, first platen 21
(1) from virtual line C to first workpiece placement station 12 (1) Slideslip, keep out of the way the first work delivery region from irradiation area AR,
And keep out of the way substantially simultaneously with this, the second platen 21 (2) for maintaining workpiece W (2) substitutes the first platen 21 (1), is moved to photograph
Region AR is penetrated, is started to workpiece W (2) irradiation ion beams IB.
The first platen 21 (1) after keeping out of the way becomes to join appearance in the first work delivery region from ion beam irradiation posture
Gesture.Then, the workpiece W (1) of the completion ion implanting kept herein completes ion note according to conveying on the second platen 21 (2)
The step of workpiece W (2) entered identical step, by the first conveying arm 31 (1), the first workpiece come in and go out mechanism 1 (1), outside first
Portion's conveying mechanism 5 (1), back in the external accommodating container for storing workpiece W (1) originally (with reference to (xi) of Fig. 4, Fig. 3
(xii))。
(i) of Fig. 3 is then returned to, repeats identical process.
According to above composition, as shown in the timing diagram of fig. 5, to the workpiece W (1) being supported on the first platen 21 (1)
During carrying out ion implanting, the workpiece W (2) of the second platen 21 (2) is exchanged into from the workpiece W (2) for completing ion implanting not to be noted
Enter the workpiece W (2) of ion, become the state for waiting for ion implanting near irradiation area AR, if so workpiece W (1) is completed
Ion implanting, it is possible to get started the ion implanting of workpiece W (2).
Therefore, because it is almost carried out continuously ion implanting without interruption, it is possible to significantly improve productivity, and can
Effectively to utilize ion beam.
In addition it is also possible to there is the ion implanting time situation shorter than workpiece swap time, even in this case, as schemed
Shown in process sequence diagram illustrated in 6, due to the first platen 21 (1), first conveying arm 31 (1) etc. and the second platen 21 (2), the
Two conveying arms 31 (2) etc. can with self contained function without interfering with each other, so generate they and meanwhile act during, it is possible thereby to
Reduce as far as possible during injecting ion to workpiece W (1) and inject the time wasted between ion to workpiece W (2).
Second embodiment
As shown in fig. 7, the ion implant systems of the second embodiment as intermediate carrier structure 3 (1), 3 (2) in addition to
Other than first conveying arm 31 (1) and the second conveying arm 31 (2), it is additionally provided with third conveying arm 31 (3) and the 4th conveying arm
31(4)。
In addition, as workpiece discrepancy mechanism 1 (1), 1 (2), 1 (3), in first workpiece discrepancy mechanism 1 (1) and second
Workpiece comes in and goes out among mechanism 1 (2), is provided with third workpiece discrepancy mechanism 1 (3).
Each section is described in detail, third conveying arm 31 (3) in pairs, is overlooked as (from z with the first conveying arm 31 (1)
Direction is seen) it can symmetrically be rotated with the first conveying arm 31 (1).The rotation axis of third conveying arm 31 (3) and the first conveying arm 31
(1) rotation axis leaves the distance between the center of two row workpiece W (1) being maintained on the first platen 21 (1).
With the second conveying arm 31 (2) in pairs, overlooking can be with the second conveying for (in terms of z directions) for 4th conveying arm 31 (4)
Arm 31 (2) symmetrically rotates.The rotation axis of 4th conveying arm 31 (4) and the rotation axis of the second conveying arm 31 (2) are left and are maintained at
Distance between the center of two row workpiece W (2) on second platen 21 (2).
The action of ion implant systems 100 formed as described above is illustrated referring to Fig. 8, Fig. 9.
For convenience of description, it is illustrated from the state shown in (i) of Fig. 8.
In this condition, it is (described to be in vertical posture when keeping two row large-diameter workpiece W (2) for the second platen 21 (2)
Ion beam irradiates posture), and positioned at the irradiation area AR, to workpiece W (2) irradiation ion beams IB.
On the other hand, the first platen 21 (1) is treated in the first work delivery region with the handing-over posture (flat-hand position)
Machine.
In addition, the first conveying arm 31 (1) catches the row small diameter workpiece W being placed in the first workpiece placement station 12 (1)
(1) after, the angle vertical with x-axis is rotated to, positioned at the top of the first platen 21 (1), and third conveying arm 31 (3) is also caught
After being placed on the row small diameter workpiece W (1) in third workpiece placement station 12 (3), rotate to the angle vertical with x-axis, with
In a state that first conveying arm 31 (1) is parallel, positioned at the top of the first platen 21 (1).
In this condition, the first platen 21 (1) is motionless, substantially simultaneously from the first conveying arm 31 (1) and third conveying arm
31 (3) receive workpiece W (1).
As shown in (ii) of Fig. 8, deliver the first conveying arm 31 (1) after workpiece W (1) and third conveying arm 31 (3) from
The rotation of first work delivery region is kept out of the way.
Then, as shown in (iii) of Fig. 8, the first platen 21 (1) of two row workpiece W (1) is maintained as the ion of vertical
Beam irradiation posture is simultaneously standby.
Hereafter, if the ion implanting of workpiece W (2) being supported on the second platen 21 (2) terminates, the second platen 21
(2) from virtual line C to second workpiece mounting table 12 (2) Slideslip, keep out of the way from irradiation area AR, and keep out of the way substantially with described
Meanwhile the first platen 21 (1) for maintaining workpiece W (1) substitutes the second platen 21 (2), is moved to irradiation area AR, starts to work
Part W (1) irradiation ion beams IB.
The second platen 21 (2) after keeping out of the way becomes to join posture from ion beam irradiation posture, joins in the second workpiece
Region is standby.
As shown in (iv) of Fig. 8, the second conveying arm 31 (2) and the 4th conveying arm 31 (4) are rotated through and, the second conveying arm 31
(2) the workpiece W (2) of first row is received from the second platen 21 (2), the is received from the second platen 21 (2) with the second conveying arm 31 (2)
Substantially simultaneously, the 4th conveying arm 31 (4) receives the workpiece W (2) of secondary series from the second platen 21 (2) to the workpiece W (2) of one row.The
The workpiece W (2) of first row is transported to second workpiece mounting table 12 (2) by two conveying arms 31 (2), and the 4th conveying arm 31 (4) is
The workpiece W (2) of two row is transported to third workpiece placement station 12 (3).
Each workpiece W (2) being placed on second workpiece mounting table 12 (2) and third workpiece placement station 12 (3) passes through respectively
Second workpiece discrepancy mechanism 1 (2), the second external delivery mechanisms 5 (2) and third workpiece discrepancy mechanism 1 (3) are transported to original
In the external accommodating container 4 for storing each workpiece W (2) respectively.
Then, pass through the second external delivery mechanisms 5 (2), second workpiece discrepancy mechanism 1 (2) and third workpiece discrepancy machine
Structure 1 (3) is conveyed without the new workpiece W (2) of injection ion from external accommodating container 4, is placed into second workpiece mounting table 12 (2)
In third workpiece placement station 12 (3).
As shown in (v) of Fig. 9, the second conveying arm 31 (2) and the 4th conveying arm 31 (4) catch these workpiece W (2) to revolve afterwards
Turn, pass in second workpiece handover region to join the second standby platen 21 (2) of posture.Hereafter, such as (vi) institute of Fig. 9
Show, the second conveying arm 31 (2) and the 4th conveying arm 31 (4) keep out of the way rotation from second workpiece handover region.
On the other hand, as shown in (vii) of Fig. 9, the second platen 21 (2) of two row workpiece W (2) is maintained as vertical
Ion beam irradiation posture is simultaneously standby.
After the ion implanting of workpiece W (1) on the first platen 21 (1) is supported on terminates, first platen 21 (1) from
Virtual line C keeps out of the way, and keep out of the way substantially simultaneously with described from irradiation area AR to first workpiece placement station 12 (1) Slideslip,
The second platen 21 (2) for maintaining workpiece W (2) substitutes the first platen 21 (1), is moved to irradiation area AR, starts to workpiece W
(2) irradiation ion beam IB.
The first platen 21 (1) after keeping out of the way becomes to join posture from ion beam irradiation posture, in the first work delivery region
It is standby.Then as shown in (viii) of Fig. 9, the workpiece W (1) of the completion ion implanting kept herein is according to conveying at second
The identical step of the workpiece W (2) of ion implanting is completed on plate 21 (2), passes through the first conveying arm 31 (1) and third conveying arm 31
(3), the first workpiece discrepancy mechanism 1 (1), third workpiece discrepancy mechanism 1 (3) and the first external delivery mechanisms 5 (1), back to original
To store in the external accommodating container 4 of workpiece W (2).
According to the ion implant systems 100 of the present embodiment of the composition, compared with first embodiment, workpiece W
(1), the swap time of W (2) further shortens, and further improves productivity.Itself main reason is that：Pass through two conveying arms
31 (1), 31 (3) or two conveying arms 31 (2), 31 (4), can join quickly workpiece W (1), the W (2) of two row without
Make platen 21 (1), 21 (2) mobile.With a conveying arm 31 (1), a conveying arm 31 (3), a conveying arm 31 (2) or
In the case that workpiece W (1), W (2) are positioned to two row by one conveying arm 31 (4), therebetween in addition to conveying arm 31 (1), 31 must be made
(2) other than moving back and forth, in order to join the workpiece of secondary series, it is necessary to make to maintain the platen 21 of a row workpiece W (1), W (2)
(1), movement is slided in 21 (2).It, must until can fix by electrostatic chuck and keep workpiece W (1), W (2) when described mobile
It must be waited for, according to the present embodiment that can shorten waiting time, it is contemplated that workpiece swap time can be greatly shortened.
And workpiece W (1) and workpiece W (2) share third workpiece placement station 12 (3), so with first embodiment from
Sub- injected system is compared, also with the substantially constant effect of occupied area.
Additionally, this invention is not limited to the embodiments.
Such as conveying arm can be arranged to multilayer up and down relative to an axis.In the case that bilevel, if
First embodiment then adds up to 4 conveying arms of setting, if second embodiment, then adds up to 8 conveying arms of setting.
According to the program, such as the work for finishing receiving processing from platen with any one upper and lower conveying arm can be carried out at the same time
It is sent to after part the action in workpiece placement station and with another conveying arm after workpiece placement station receives untreated work-piece
The action it sent on platen, it is possible thereby to improve processing speed.
If illustrating, if the situation of first embodiment, then (v) and Fig. 4 of Fig. 3 can be carried out respectively simultaneously
The action of (viii), the action of (ii) of (xi) of Fig. 4 and Fig. 3, the action of (vii) of (vi) of Fig. 3 and Fig. 4, Fig. 4
(xii) and the action of (i) of Fig. 3.In addition, if be the situation of second embodiment, then can be carried out at the same time Fig. 8 (iv) and
The action of (i) of the action of (v) of Fig. 9, (viii) of Fig. 9 and Fig. 8.
The workpiece columns being maintained on work support can be more than a row or 3 row.
If using the conveying arm (being the quantity of the different conveying arm of axis in this case) of quantity identical from columns, such as second
Shown in embodiment, expect to increase substantially productivity.In the case of more than 3 row, make as long as changing the height of conveying arm
Obtaining independently to rotate.
The sequence of batching products of workpiece is also not necessarily limited to the embodiment, it may be considered that various modes.
Configuration of the workpiece on platen can also be zigzag.It is possible thereby to realizing makes size of the device in x directions become smaller.
The moving direction of platen is without vertical with ion beam direction of illumination.
The twist mechanism of the torsion angle adjustment of workpiece can also be set, before prechamber is entered or can be entered pre-
The torsion adjustment of workpiece is carried out after vacuum chamber.
Also there is no particular limitation for the structure of ion beam ejecting mechanism side.Such as can also set to from ion source from
Beamlet carries out the mass analyzing magmet of quality analysis.
The structure of workpiece discrepancy mechanism, workpiece conveying mechanism, intermediate carrier structure etc. is not limited to the embodiment.Such as
Structure as conveyer belt mode or multiaxis multi-joint arm can be used.In addition, the pairs of mechanism without be configured to
It is symmetrical centered on virtual line, as long as the component of a side is located at in a separated region of virtual line, the component of the opposing party
In another region.That is, described " opposite " also includes symmetrically certainly in the claims, but it is described
The concept of broad sense.
Without having had to intermediate carrier structure.That is, work support can also be the workpiece conveyed indoors from placement
Portion is delivered directly to irradiation area.In this case, placement section becomes work delivery region.
Workpiece is not limited to chip or block of metal substrate or regulation raw material etc., and the shape of workpiece is also unlimited
Then round or rectangle.
The energy line of irradiation is also not necessarily limited to be ion beam or electric wire, proton line, electromagnetic wave etc..Such as this hair
It is bright to can be used for electron beam irradiation device, sputter equipment, plasma doping apparatus etc..
Additionally, this invention is not limited to the embodiments, can carry out without departing from the spirit and scope of the present invention various
Deformation.In addition, technical characteristic recorded in the embodiment of the present invention mutually can be combined to form new technology
Scheme.
Claims (13)
1. a kind of energy line irradiation system, which is characterized in that the energy line irradiation system includes：Energy line ejecting mechanism, to
Defined irradiation area projects energy line；And work support, between defined work delivery region and the irradiation area
The workpiece of the target as the illuminated energy line is conveyed,
The work delivery region is arranged on across opposite two position of virtual line, and the virtual line passes through the energy
The irradiation area of line is measured,
It is provided with as the work support：First work support, the first workpiece in the work delivery region as a side are handed over
Connect conveying workpieces between region and the irradiation area；And second workpiece stent, in the work delivery region as the opposing party
Second workpiece handover region and the irradiation area between conveying workpieces,
To during being transported to the workpiece irradiation energy line of irradiation area by the work support of a side, pass through the institute of the opposing party
It states work support the workpiece that completion energy line irradiates is exchanged into non-irradiated workpiece and is kept, by described in a side
After the workpiece that work support terminates energy line irradiation is kept out of the way, by the work support of the opposing party non-irradiation energy line
The workpiece criticized down is transported to irradiation area, starts irradiation energy line.
2. energy line irradiation system according to claim 1, which is characterized in that
First work support and the mutually different workpiece of the second workpiece stent energy delivery size.
3. energy line irradiation system according to claim 1 or 2, which is characterized in that the energy line irradiation system also wraps
It includes：
First workpiece placement section and second workpiece placement section are arranged on across two opposite positions of the virtual line；
First transfer member, the conveying workpieces between the first work delivery region and the first workpiece placement section；And
Second transfer member, the conveying workpieces between the second workpiece handover region and the second workpiece placement section.
4. energy line irradiation system according to claim 3, which is characterized in that the energy line irradiation system further includes：
Third workpiece placement section is arranged between the first workpiece placement section and the second workpiece placement section；
Third transfer member, the conveying workpieces between the first work delivery region and the third workpiece placement section；And
4th transfer member, the conveying workpieces between the second workpiece handover region and the third workpiece placement section.
5. energy line irradiation system according to claim 3, which is characterized in that
First transfer member and the mutually different workpiece of the second transfer member energy delivery size.
6. energy line irradiation system according to claim 4, which is characterized in that
First transfer member, second transfer member, the third transfer member and the 4th transfer member can be defeated
Send the workpiece that size is mutually different.
7. energy line irradiation system according to claim 1 or 2, which is characterized in that
The work support in the work delivery region after transfer member receives workpiece, mobile predetermined distance, from described defeated
Component is sent to receive other workpiece, thus, it is possible to place multiple row workpiece in the direction of movement.
8. energy line irradiation system according to claim 1 or 2, which is characterized in that
The energy line is ion beam, injects ion to workpiece.
9. energy line irradiation system according to claim 3, which is characterized in that
The energy line is ion beam, injects ion to workpiece.
10. energy line irradiation system according to claim 4, which is characterized in that
The energy line is ion beam, injects ion to workpiece.
11. energy line irradiation system according to claim 5, which is characterized in that
The energy line is ion beam, injects ion to workpiece.
12. energy line irradiation system according to claim 6, which is characterized in that
The energy line is ion beam, injects ion to workpiece.
13. energy line irradiation system according to claim 7, which is characterized in that
The energy line is ion beam, injects ion to workpiece.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-079779 | 2013-04-05 | ||
| JP2013079779A JP5733333B2 (en) | 2013-04-05 | 2013-04-05 | Energy beam irradiation system |
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| Publication Number | Publication Date |
|---|---|
| CN104103554A CN104103554A (en) | 2014-10-15 |
| CN104103554B true CN104103554B (en) | 2018-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310567012.8A Active CN104103554B (en) | 2013-04-05 | 2013-11-14 | Energy line irradiation system and workpiece conveying mechanism |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5733333B2 (en) |
| CN (1) | CN104103554B (en) |
| FR (1) | FR3004287A1 (en) |
| SG (1) | SG2014006076A (en) |
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|---|---|---|---|---|
| US9911636B1 (en) * | 2016-09-30 | 2018-03-06 | Axcelis Technologies, Inc. | Multiple diameter in-vacuum wafer handling |
| US10186446B2 (en) | 2016-09-30 | 2019-01-22 | Axcelis Technology, Inc. | Adjustable circumference electrostatic clamp |
| JP6821882B1 (en) * | 2019-10-23 | 2021-01-27 | 株式会社三井Ｅ＆Ｓマシナリー | Base material processing equipment |
| WO2024116747A1 (en) * | 2022-12-02 | 2024-06-06 | 住友重機械イオンテクノロジー株式会社 | Ion implantation device and ion implantation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929456A (en) * | 1996-10-30 | 1999-07-27 | Ebara Corporation | Ion implantation system and method adapted for serial wafer processing |
| CN101921990A (en) * | 2009-06-11 | 2010-12-22 | 日新离子机器株式会社 | Ion implanter |
| CN102262998A (en) * | 2010-05-26 | 2011-11-30 | 日新离子机器株式会社 | Ion implantation device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61123460U (en) * | 1985-01-22 | 1986-08-04 | ||
| JPH01173558A (en) * | 1987-12-25 | 1989-07-10 | Tokyo Electron Ltd | Ion implanter |
| JP5545287B2 (en) * | 2011-10-17 | 2014-07-09 | 日新イオン機器株式会社 | Energy beam irradiation device and workpiece transfer mechanism |
-
2013
- 2013-04-05 JP JP2013079779A patent/JP5733333B2/en active Active
- 2013-11-14 CN CN201310567012.8A patent/CN104103554B/en active Active
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2014
- 2014-01-24 SG SG2014006076A patent/SG2014006076A/en unknown
- 2014-02-12 FR FR1451071A patent/FR3004287A1/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929456A (en) * | 1996-10-30 | 1999-07-27 | Ebara Corporation | Ion implantation system and method adapted for serial wafer processing |
| CN101921990A (en) * | 2009-06-11 | 2010-12-22 | 日新离子机器株式会社 | Ion implanter |
| CN102262998A (en) * | 2010-05-26 | 2011-11-30 | 日新离子机器株式会社 | Ion implantation device |
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| Publication number | Publication date |
|---|---|
| SG2014006076A (en) | 2014-11-27 |
| JP5733333B2 (en) | 2015-06-10 |
| FR3004287A1 (en) | 2014-10-10 |
| CN104103554A (en) | 2014-10-15 |
| JP2014203713A (en) | 2014-10-27 |
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