CN102262998A - Ion implantation device - Google Patents
Ion implantation device Download PDFInfo
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- CN102262998A CN102262998A CN2011101261575A CN201110126157A CN102262998A CN 102262998 A CN102262998 A CN 102262998A CN 2011101261575 A CN2011101261575 A CN 2011101261575A CN 201110126157 A CN201110126157 A CN 201110126157A CN 102262998 A CN102262998 A CN 102262998A
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 191
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 100
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 55
- 230000005855 radiation Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 42
- 229940090044 injection Drugs 0.000 description 23
- 238000002347 injection Methods 0.000 description 23
- 239000007924 injection Substances 0.000 description 23
- 150000005837 radical ions Chemical class 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 230000032258 transport Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
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Abstract
The invention provides an ion implantation device, which can substantially improve quantity of processed substrates in init time and ion implantation quantity in unit time, and can deal with the problem of large-scale substrates and avoid that the device becomes excessively large. The ion implantation device comprises a conveying mechanism (3) and a pair of ion beam illumination mechanisms (5), wherein the conveying mechanism comprises a pair of tracks (31, 32) mutually separated and parallelly arranged, panel portions of substrates having the same shape are parallelly arranged with the tracks (31, 32) along the tracks (31, 32), and the substrates (2) maintain parallel and respectively move towards opposite directions. Observed from a direction vertical to the panel portions, when substrates (2) at the tracks arrive at a preset superposition position, the substrates are basically superposed, and ion beams (B) avoid the substrates at the superposition position, and respectively pass through the moving direction side of the substrates (2) and the opposite direction of the moving direction.
Description
Technical field
The present invention relates to a kind of ion implantation apparatus that is used for ion is injected substrate.
Background technology
For example, for desired characteristics being attached on the parts such as the employed glass substrate of flat-panel monitor, utilizing the ion beam of band shape that substrate is scanned usually and inject ion.
In aforesaid ion implantation process, the long limit size of utilizing the bundle section is in advance shone greater than the maximum sized band shape ion beam of real estate board, makes the whole regional crosscut ion beam (with reference to patent documentation 1: Japan Patent discloses the communique spy and opens flat 7-99224 number) of the panel part of substrate again by conveyer.
By adopting this ion implantation apparatus can make the whole zone of ion beam irradiation, thereby but increase the number and the ion injection rate of unit interval treatment substrate in the panel part of substrate.
Yet, for an aforesaid radical ion bundle, in the ion implantation apparatus of crosscut substrate one by one, if want to improve the disposal ability that ion injects on this basis, then by changing various parameters, for example accelerate travelling speed etc., can improve by a small margin and but be difficult to increase substantially disposal ability.
On the other hand, this ion implantation apparatus needs to keep and the identical disposal ability of existing apparatus cardinal principle at least, also requires to tackle the maximization of substrate in recent years.That is, flat-panel monitor is gradually to large scale development, and the size of correspondingly required glass substrate also maximizes gradually, for example is about 2200mm * 2500mm.For this situation, the length dimension on the long limit of bundle section of the ion beam of existing ion implantation apparatus irradiation about about 1000mm, therefore can not inject ion with ion beam irradiation in the whole zone of the panel part of substrate greatly as existing apparatus.
Maximize if only deal with substrate by the long edge lengths that increases the bundle section of being with the shape ion beam, then compare with the amount that ion beam maximizes, it is excessive that ion beam irradiation apparatus itself can become.Thus, in the load-bearing scope on the ground of factory that is difficult to make the weight of ion implantation apparatus to remain on to be provided with described ion implantation apparatus etc.
Summary of the invention
In view of the above problems, the object of the present invention is to provide the ion implantation apparatus that can address the above problem simultaneously, but first technical task of the present invention is to increase substantially the number of unit interval treatment substrate and the ion injection rate of unit interval, in addition, second technical task of the present invention is to tackle the maximization of substrate in recent years, in case locking apparatus integral body is excessive.
Promptly, ion implantation apparatus of the present invention comprises: conveyer, have and be separated from each other and parallel pair of tracks, make the panel part of substrate of same shape and described parallel track along each described track and make each substrate on each track keep the posture that is parallel to each other, and each substrate is advanced respectively round about; And a pair of ion beam irradiation mechanism, the position of the substrate crosscut that the ion beam irradiation of band shape is advanced on by described track at the ion beam first type surface, described first type surface is bigger surface in the side parallel with described ion beam direction of advance, observe from the direction vertical with described panel part, when the substrate on each track arrives the coincidence position of regulation, each described substrate overlaps substantially, and each described ion beam avoids being positioned at the substrate of described coincidence position and direction of advance one side and the opposite side with direction of advance by described substrate respectively.
According to said structure, each substrate advances respectively round about, each described ion beam avoids being positioned at the substrate of described coincidence position and direction of advance one side and the opposite side with direction of advance by described substrate respectively, therefore, can prevent to block the substrate that is positioned at rear side from shining the substrate that each ion beam unilateral observation is positioned at the front side, thereby prevent ion beam irradiation less than the substrate that is positioned at rear side, and can guarantee that the position beyond the coincidence position has two radical ion bundles to be radiated at respectively on each substrate all the time.
Therefore, owing to transport two substrates simultaneously, and ion is injected to different substrates simultaneously by two radical ion bundles all the time in the position beyond described coincide point, so carry out the ion implantation apparatus that ion injects one by one by a radical ion bundle and compare with existing, but can increase substantially the number of unit interval treatment substrate and the ion injection rate of unit interval.
In addition, by using two radical ion bundles, the set positions of each ion beam irradiation substrate can be become different positions, for example substrate can be divided into these two zones of the first half and Lower Half, and by each ion beam ion is carried out in each zone and inject, its result transports also and can carry out the ion injection to the whole zone of the panel part of substrate by a substrate.Therefore, need not the band shape ion beam irradiation that the long side direction of bundle section is long on large substrate.Need not to use excessive ion beam irradiation apparatus, and can use the size with ion beam to be in a ratio of two small-sized ion beam irradiation apparatus, thereby the weight of ion implantation apparatus integral body can be remained in the load-bearing scope on ground.
For example, if linear array two radical ion bundles and form the ion beam of a long band shape, then because the ion beam irradiation mechanism that need be arranged above and below, so be subjected to the influence of analyzing magnet and peristome etc., produce the zone be difficult to shine ion beam at central portion, cause can not with even ion beam be radiated on the whole zone of panel part of substrate.And in the present invention, owing to,, just ion can be injected equably the whole zone of the panel part of substrate so need not overlapping each ion beam irradiation mechanism with the separately irradiation of each ion beam.
As only use small-sized ion beam irradiation mechanism and only make large-scale substrate move once, just can be with the embodiment of ion beam irradiation in the whole zone of panel part, from parallel with described panel part and observe with the direction of described parallel track, each ion beam staggers mutually.
In order not waste the ion beam of band shape, can inject ion in maximum area ground, and the ion injection rate in whole zone that guarantees panel part is even, and from parallel with described panel part and observe with the direction of described parallel track, each ion beam is adjacent and link together substantially.
In ion implantation apparatus, reduce by the volume in the room of vacuum exhaust, make described room guarantee vacuum degree easily, in addition, in order to reduce the area that is provided with of ion implantation apparatus integral body as far as possible, each described ion beam is used for the process chamber internal radiation substrate after vacuum exhaust, and described conveyer makes described substrate move to another track from a track in described process chamber.
In order to prevent to sneak into the pollution that atmosphere in the process chamber etc. causes, and guarantee the vacuum degree in the process chamber easily, described ion implantation apparatus also comprises loadlock may and treats unit room, under atmospheric pressure substrate is transported into described loadlock may, the described unit room for the treatment of is arranged between described loadlock may and the described process chamber.
Gas that the pollution that causes for the atmosphere that prevents from reliably to sneak in the process chamber and preventing produces in the process chamber etc. is discharged in the atmosphere, is provided with vacuum valve described treating between unit room and the described process chamber.
Be used for substrate is transported into the next door in the described process chamber or the switching number of times of vacuum valve in order to reduce as far as possible, and keep vacuum degree and cleannes in the process chamber easily, described conveyer be used to make substrate along a track from described standby indoor advancing in the described process chamber, and it is indoor to make described substrate advance to described standby in along another track from described process chamber, can simultaneously the substrate on each track be transported and be transported into described process chamber.
As mentioned above, according to the present invention, because each substrate is advanced respectively round about, and make ion beam avoid each substrate in the coincidence position, shine each substrate respectively in direction of advance one side and an opposite side, so can prevent to cause irradiation less than ion beam because of a substrate blocks another substrate with direction of advance.Therefore, two radical ion Shu Tongchang can inject ion to different substrates, thereby can increase substantially the treating capacity and the injection rate of the substrate that once transports.In addition, owing to use two radical ion bundles, thus staggered in the position of the described substrate of irradiation, even large-scale substrate also can inject by two zones being carried out ion respectively, thereby once just ion can be injected whole zone.Owing to can use more small-sized ion beam irradiation apparatus,, maximize thereby can tackle substrate so can not cause the excessive maximization of device.
Description of drawings
Fig. 1 is the schematic diagram of the ion implantation apparatus of expression first embodiment of the invention.
Fig. 2 is the schematic diagram of the band shape ion beam of explanation first execution mode.
Fig. 3 is the schematic action diagram of action in the ion implantation process of expression first execution mode.
Fig. 4 is the schematic diagram of the ion implantation apparatus of expression second embodiment of the invention.
Fig. 5 is the schematic action diagram of action in the ion implantation process of expression second execution mode.
Fig. 6 is the schematic diagram of expression based on the injection device of the comparative example of second execution mode.
Fig. 7 is the schematic action diagram of expression based on the action of the comparative example of second execution mode.
Description of reference numerals
100 ion implantation apparatuses
5 ion beam irradiation mechanisms
3 conveyers
31,32 tracks
34 overlap the position
The B ion beam
Embodiment
Below, with reference to accompanying drawing first execution mode of the present invention is described.
As shown in Figure 1, the ion implantation apparatus 100 of first execution mode be used for to employed large substrates 2 such as flat-panel monitor by the 10 internal radiation ion beam B of the process chamber after the vacuum exhaust, carry out ion and inject.At this, the substrate 2 of present embodiment for example comprises glass substrate, scribbles the glass substrate of alignment film, the substrate of semiconductor substrate and other irradiation ion beams B.In addition, though the substrate 2 in the present embodiment be shaped as rectangular thin sheet form, also can be circular.
Described ion implantation apparatus 100 comprises: process chamber 10 by the room after the vacuum exhaust, is used for ion beam B is radiated at substrate 2; Treating unit room 8, is the room with described process chamber 10 adjacency, pending substrate 2 standbies such as makes; Loadlock may 6 is used for treating to pick and place between unit room 8 and the atmosphere substrate 2 described.Each room is the cuboid of hollow substantially, and the connecting portion between each room is separated by vacuum valve G (gate valve).
More particularly, described ion implantation apparatus 100 comprises: conveyer 3, described loadlock may 6, described treating in unit room 8 and the described process chamber 10, transport substrate 2 respectively with two row towards rightabout; Control part (not shown) is to controlling or carry out various controls according to this position in the position of the substrate 2 on the described conveyer 3; And ion beam irradiation mechanism 5, in described process chamber 10, a pair of ion beam B is radiated on the substrate 2 that described conveyer 3 transports.
Below each several part is described.In the following description, adopt right-handed coordinate system to describe, that is, with horizontal plane as the XY plane, with vertical upward to as the Z axle.
Described conveyer 3 has and is separated from each other and parallel pair of tracks, make the panel part of substrate 2 of same shape and described parallel track along each described track and make each substrate 2 keeping parallelism posture on each track, and each substrate is advanced in the opposite direction.
More particularly, in the present embodiment, described pair of tracks comprises: first track 31, erecting device 40 from substrate advances substrate 2 according to described loadlock may 6, the described direction of advance of unit room 8, described process chamber 10 for the treatment of successively, wherein, described substrate erects device 40 and is used to make undressed substrate 2 to become to erect state from the horizontally-arranged state exchange of level; And second track 32, reversed in order with first track 31, make by each room and processed substrate 2 advances to substrate storage device 41 towards rightabout, wherein, substrate storage device 41 can convert substrate 2 to the horizontally-arranged state of level and storage from the state of erecting once more.As shown in Figure 1, on first track 31 and second track 32, transport each substrate 2 erecting state lower edge X-direction, the panel part of each substrate 2 is kept towards Y direction.
In addition, described conveyer 3 makes substrate 2 move to another track from a track in described process chamber 10.More particularly, also comprise the 3rd track 33 in the deep of process chamber 10, described the 3rd track 33 can make substrate 2 move to second track 32 from first track 31, can make substrate 2 carry out u turn in process chamber 10.
In addition, in described process chamber 10, from the direction vertical with described panel part, be that Y direction is observed, the substrate 2 on each track can overlap when arriving the coincidence position 34 of regulation substantially.Specifically, shown in Fig. 1 (b), be positioned at the process chamber 10 coincidence position 34 of central authorities substantially, the profile of the substrate 2 on the profile that makes the substrate 2 on first track 31 and second track 32 is consistent.
Described control part is so-called computer, for example be used for to the travelling speed and the position of each substrate 2 control, according to the position of each substrate 2 to being arranged on opening or closing of vacuum valve G between each room and controlling and the conducting of ion beam B or disconnection etc. being controlled.
Described a pair of ion beam irradiation mechanism 5 be used for will band shape ion beam B be radiated at the position of substrate 2 crosscuts that ion beam first type surface Ba advanced on the described track, wherein, described first type surface Ba is bigger surface in the side parallel with the ion beam direction of advance.At this, each described ion beam irradiation mechanism 5 is described in detail, the ion beam B that penetrates from ion source 52 is by analyzing magnet 56, after analyzing through amount of exercise, penetrates by the ion beam of slit 59 with band shape again.As shown in Figure 2, the long edge lengths Wz of the bundle section of the ion beam B (also claiming band shape etc.) of band shape is more a lot of greatly than the length Wx of minor face, and the part of representing with oblique line in Fig. 2 is the end face of bundle, and the represented side of Reference numeral Ba is first type surface Ba.
Each described ion beam B avoids being positioned at the substrate 2 of described coincidence position 34, respectively direction of advance one side and the opposite side with direction of advance by described substrate 2.In the present embodiment, the ion beam irradiation mechanism 5 that is arranged in direction of advance one side (accompanying drawing right side) of described coincidence position 34 is radiated at the first ion beam B on the substrate 2, and the ion beam irradiation mechanism 5 that is arranged in an opposite side with direction of advance (accompanying drawing left side) is radiated at the second ion beam B on the substrate 2.
In addition, shown in Fig. 1 (b), from the direction vertical with panel part, be that Y direction is observed, each ion beam B shines mutually with staggering, utilizes each ion beam B that the panel part integral body of substrate 2 is scanned by ion beam B.In other words, from parallel with described panel part and with the direction of described parallel track, be that X-direction is observed, each ion beam B is adjacent and link together substantially.By in this way ion beam B being radiated on the substrate 2, as long as transport substrate 2 No. one time in direction of advance or with the direction of advance rightabout, just can be with the whole zone of ion injection face board.
For the ion implantation apparatus 100 of described structure, the action when with reference to the action diagram of Fig. 3 ion being injected describes.In addition, in this action specification, with in the process chamber 10 on first track 31 and the substrate 2 that transports on second track 32 be called first substrate, second substrate.Under situation about substrate 2 being moved to from first track 31 on second track 32, though the title of described substrate 2 becomes second substrate by first substrate, the same substrate 2 that refers to.(a)～(f) expression of Fig. 3 is along with the position of the substrate of time variation.
Shown in Fig. 3 (a), at first make the left side standby of first substrate that is transported in the process chamber 10 at the second ion beam B, and make of the right side standby of second substrate at the first ion beam B, wherein, described second substrate is to inject primary ions and moved to the substrate 2 of second track 32 from first track 31 through each ion beam B.
Then, shown in Fig. 3 (b), first substrate moves to the position of second ion beam B scanning, and the zone of panel part Lower Half is injected into ion.Second substrate moves to the position of first ion beam B scanning simultaneously, and the zone of the panel part first half is injected into ion.
Shown in Fig. 3 (c), each substrate 2 advances to direction separately respectively, the ion implanted junction bundle is carried out in half zone after, in the coincidence position 34 between the first ion beam B and the second ion beam B, each substrate 2 is seen substantially from Y direction and is overlapped.Therefore, can find out obviously with reference to the accompanying drawings that first substrate that is positioned at the last side of body can not block the ion beam B that shine to second substrate of rear side.
Then, shown in Fig. 3 (d), this moment is opposite with Fig. 3 (b), and first substrate moves to the position of first ion beam B scanning, and the zone of the panel part first half is injected into ion.Second substrate moves to the position of second ion beam B scanning simultaneously, and the zone of panel part Lower Half is injected into ion.
Then, when each substrate 2 by after the ion beam B, shown in Fig. 3 (e), first substrate advances to the deep of process chamber 10, second substrate advances to the gateway of transporting of process chamber 10.At this moment, ion has all been injected in the whole zone of the panel part of each substrate 2.
At last, shown in Fig. 3 (f), open vacuum valve G, second substrate is transported to treating unit room 8 from process chamber 10, simultaneously the first new substrate is transported into.In addition, first substrate that is positioned at process chamber 10 deeps at synchronization moves to second track 32 along the 3rd track 33.After this repeat the operation of Fig. 3 (a)～(f).That is, on first track 31, advance by making substrate 2, the whole zone of panel part be injected into ion once after, by advancing on second track 32, the whole zone of panel part is re-injected ion.Therefore, can further increase ion injection rate, even perhaps accelerate travelling speed also can guarantee to inject expectation when leaving process chamber 10 ion concentration to substrate 2.
Hence one can see that, because each ion beam B can inject ion to two substrates 2 usually simultaneously, so compare with the situation that existing usefulness one radical ion bundle B handles one by one, can increase substantially the treating capacity of unit interval.In addition, in the first embodiment, substrate 2 moves to second track, 32 totals from first track 31 and is injected into four secondary ions in process chamber 10, therefore can increase considerably the ion injection rate to a substrate 2.
In addition, from observing two radical ion bundle B with the direction of parallel track, each ion beam B is adjacent and link together substantially, therefore just ion can be injected two zones of being with the ion beam B of shapes that are equivalent on the Z-direction by transporting substrate 2.Therefore, even large-scale substrate 2 also need not to use a long band shape ion beam B of long limit who restraints section, as long as once just ion can be injected substantially equably the whole zone of the panel part of substrate 2.Therefore, need not to use excessive ion beam B irradiation unit, and can use small-sized ion beam B irradiation unit, thereby the weight of whole ion implantation apparatus is remained in the load-bearing scope on ground.
Therefore easily in addition, be provided with between described loadlock may 6 and described process chamber 10 and treat unit room 8, in addition, each room is separated by vacuum valve G, guarantees the vacuum degree in the described process chamber 10, and prevents that easily toxic gas etc. from leaking into the outside.
Then, second execution mode is described.
First execution mode makes substrate 2 move to second track 32 from first track 31, and carry out u turn, yet as shown in Figure 4, the ion implantation apparatus 100 of second execution mode does not possess makes the round structure of substrate 2 from first track, 31 to second tracks 32, and directly linear moves.
Therefore, as shown in Figure 4, be the center with process chamber 10, be provided with symmetrically successively and treat that unit room 8, loadlock may 6, substrate erect device 40 and substrate storage device 41.
Shown in the action diagram of Fig. 5, the ion implantation apparatus 100 of second execution mode and the difference of first execution mode be, only with the whole zone of ion injection face board once.In addition, the ion implantation apparatus 100 of second execution mode and the identical point of first execution mode be, in process chamber 10, during except the transporting or be transported into of substrate 2 and the coincidence position 34 of substrate 2, two radical ion bundle B always are radiated on certain substrate 2.
Then, for by making substrate 2 before come in to increase substantially the reason of the treating capacity of unit interval respectively round about, contrast the situation that hypothesis second execution mode shown in Figure 6 only transports a row substrate 2 and describe.In addition, Fig. 7 is corresponding with the action diagram of Fig. 5, is the action diagram of existing situation of the moving state of expression substrate 2.
(b) of (b) if of comparison diagram 5 and Fig. 7 or (d) of Fig. 5 and Fig. 7 (d) etc., then can obviously find out, under the situation of only transporting a row substrate 2, exist a radical ion bundle B can not be radiated at time on any substrate, and two radical ion bundle B of the ion implantation apparatus 100 of second execution mode can both inject ion.Hence one can see that, has only by transporting each substrate 2 respectively round about, and make each ion beam B avoid being positioned at the substrate 2 that overlaps position 34 to shine, could increase substantially the treating capacity of unit interval by present embodiment.
Other execution modes are described.In each described execution mode, the size of each ion beam only can be shone the subregion of each substrate, yet also can be that the long edge lengths of ion beam can be shone the whole zone of real estate board.Such device also can increase substantially accessible number of unit interval and ion injection rate.
In addition, also can be from the direction of parallel track, be that X-direction is observed, each ion beam is partially overlapped.For example, can only make the ion injection rate of central portion of real estate board on the high side.
Also can arrange the structure that the process chamber shown in a plurality of described second execution modes is set and constitute ion implant systems.In the manner described, owing to the ion implanted region territory can be divided into little zone, the ion in the whole zone of panel part of large substrate injects or changes each regional ion injection rate so can tackle more, thereby can improve the degree of freedom of various ion injection modes.
For example, under situation such as need not the vacuum degree in the process chamber tightly managed, can omit the described unit room for the treatment of, but process chamber directly is connected with loadlock may.
In described first execution mode and described second execution mode, to a substrate by once or twice ion beam carry out ion and inject, inject ion but also can repeatedly scan according to the dosage of expectation etc.For example,, make substrate return first track once more, through repeatedly finishing the ion injection after the circulation from second track if the ion implantation apparatus of first execution mode then erects the connection device that substrate is set between device and the described substrate storage device at described substrate.In addition, can also in process chamber, keep first substrate and second substrate to overlap substantially in described coincidence position, and both are are repeatedly come and gone after fortune inlet sides and deep one side, substrate is transported and is transported into process chamber, and substrate is transported to second track from first track.
In addition, as long as without prejudice to purport of the present invention, can carry out various distortion or execution mode is carried out various combinations.
Claims (8)
1. ion implantation apparatus is characterized in that comprising:
Conveyer, have and be separated from each other and parallel pair of tracks, make the panel part of substrate of same shape and described parallel track along each described track and make each substrate on each track keep the posture that is parallel to each other, and each substrate is advanced respectively round about; And
A pair of ion beam irradiation mechanism, the position of the substrate crosscut that the ion beam irradiation of band shape is advanced on by described track at the ion beam first type surface, described first type surface is bigger surface in the side parallel with described ion beam direction of advance,
Observe from the direction vertical with described panel part, when the substrate on each track arrives the coincidence position of regulation, each described substrate overlaps substantially, and each described ion beam avoids being positioned at the substrate of described coincidence position and direction of advance one side and the opposite side with direction of advance by described substrate respectively.
2. ion implantation apparatus according to claim 1 is characterized in that, from parallel with described panel part and observe with the direction of described parallel track, each ion beam staggers mutually.
3. ion implantation apparatus according to claim 2 is characterized in that, from parallel with described panel part and observe with the direction of described parallel track, each ion beam is adjacent and link together substantially.
4. according to any described ion implantation apparatus in the claim 1～3, it is characterized in that,
Each described ion beam is used for the process chamber internal radiation substrate after vacuum exhaust,
Described conveyer makes described substrate move to another track from a track in described process chamber.
5. ion implantation apparatus according to claim 4, it is characterized in that, described ion implantation apparatus also comprises loadlock may and treats under atmospheric pressure substrate to be transported into described loadlock may by unit room that the described unit room for the treatment of is arranged between described loadlock may and the described process chamber.
6. ion implantation apparatus according to claim 5 is characterized in that, is provided with vacuum valve described treating between unit room and the described process chamber.
7. ion implantation apparatus according to claim 5 is characterized in that,
Described conveyer be used to make substrate along a track from described standby indoor advancing in the described process chamber, and it is indoor to make described substrate advance to described standby in along another track from described process chamber, can simultaneously the substrate on each track be transported and be transported into described process chamber.
8. ion implantation apparatus according to claim 6 is characterized in that,
Described conveyer be used to make substrate along a track from described standby indoor advancing in the described process chamber, and it is indoor to make described substrate advance to described standby in along another track from described process chamber, can simultaneously the substrate on each track be transported and be transported into described process chamber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-120053 | 2010-05-26 | ||
| JP2010120053A JP5311681B2 (en) | 2010-05-26 | 2010-05-26 | Ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102262998A true CN102262998A (en) | 2011-11-30 |
| CN102262998B CN102262998B (en) | 2013-11-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101261575A Active CN102262998B (en) | 2010-05-26 | 2011-05-12 | Ion implantation device |
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| Country | Link |
|---|---|
| JP (1) | JP5311681B2 (en) |
| KR (1) | KR101243744B1 (en) |
| CN (1) | CN102262998B (en) |
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| CN103177924A (en) * | 2011-12-23 | 2013-06-26 | 圆益Ips股份有限公司 | Substrate processing device and substrate processing system having the same |
| CN104103554A (en) * | 2013-04-05 | 2014-10-15 | 日新离子机器株式会社 | Energy beam irradiation system and workpiece conveying mechanism |
| CN104221122A (en) * | 2012-02-14 | 2014-12-17 | 日新离子机器株式会社 | Ion beam irradiation device |
| CN104593744A (en) * | 2013-11-01 | 2015-05-06 | 韦学运 | Automation equipment for processing shield cutter by plasma |
| CN106981540A (en) * | 2017-03-24 | 2017-07-25 | 东莞帕萨电子装备有限公司 | Ion implanting runs piece method and ion implanting runs piece system |
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| KR20020025103A (en) * | 2002-01-15 | 2002-04-03 | (주)한국 티엠 | Smoking cessation agent and manufacturing method thereof |
| KR101971453B1 (en) * | 2012-11-12 | 2019-04-24 | 주식회사 원익아이피에스 | Substrate processing module and substrate processing system having the same |
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| CN106981540B (en) * | 2017-03-24 | 2019-07-23 | 东莞帕萨电子装备有限公司 | Ion implanting runs piece method and ion implanting runs piece system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5311681B2 (en) | 2013-10-09 |
| KR101243744B1 (en) | 2013-03-13 |
| KR20110129821A (en) | 2011-12-02 |
| JP2011249096A (en) | 2011-12-08 |
| CN102262998B (en) | 2013-11-20 |
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