SG2014006076A - Energy beam irradiation system and work transfer mechanism - Google Patents

Energy beam irradiation system and work transfer mechanism

Info

Publication number
SG2014006076A
SG2014006076A SG2014006076A SG2014006076A SG2014006076A SG 2014006076 A SG2014006076 A SG 2014006076A SG 2014006076 A SG2014006076 A SG 2014006076A SG 2014006076 A SG2014006076 A SG 2014006076A SG 2014006076 A SG2014006076 A SG 2014006076A
Authority
SG
Singapore
Prior art keywords
transfer mechanism
beam irradiation
energy beam
irradiation system
work transfer
Prior art date
Application number
SG2014006076A
Inventor
Onoda Masatoshi
Tatemichi Junichi
Matsumoto Takeshi
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Publication of SG2014006076A publication Critical patent/SG2014006076A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
SG2014006076A 2013-04-05 2014-01-24 Energy beam irradiation system and work transfer mechanism SG2014006076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013079779A JP5733333B2 (en) 2013-04-05 2013-04-05 Energy beam irradiation system

Publications (1)

Publication Number Publication Date
SG2014006076A true SG2014006076A (en) 2014-11-27

Family

ID=51589601

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2014006076A SG2014006076A (en) 2013-04-05 2014-01-24 Energy beam irradiation system and work transfer mechanism

Country Status (4)

Country Link
JP (1) JP5733333B2 (en)
CN (1) CN104103554B (en)
FR (1) FR3004287A1 (en)
SG (1) SG2014006076A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911636B1 (en) * 2016-09-30 2018-03-06 Axcelis Technologies, Inc. Multiple diameter in-vacuum wafer handling
US10186446B2 (en) 2016-09-30 2019-01-22 Axcelis Technology, Inc. Adjustable circumference electrostatic clamp
JP6821882B1 (en) * 2019-10-23 2021-01-27 株式会社三井Ｅ＆Ｓマシナリー Base material processing equipment
WO2024116747A1 (en) * 2022-12-02 2024-06-06 住友重機械イオンテクノロジー株式会社 Ion implantation device and ion implantation method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123460U (en) * 1985-01-22 1986-08-04
JPH01173558A (en) * 1987-12-25 1989-07-10 Tokyo Electron Ltd Ion implanter
JPH10134761A (en) * 1996-10-30 1998-05-22 Ebara Corp Ion implantation device and method
JP4766156B2 (en) * 2009-06-11 2011-09-07 日新イオン機器株式会社 Ion implanter
JP5311681B2 (en) * 2010-05-26 2013-10-09 日新イオン機器株式会社 Ion implanter
JP5545287B2 (en) * 2011-10-17 2014-07-09 日新イオン機器株式会社 Energy beam irradiation device and workpiece transfer mechanism

Also Published As

Publication number Publication date
CN104103554B (en) 2018-06-15
FR3004287A1 (en) 2014-10-10
JP2014203713A (en) 2014-10-27
JP5733333B2 (en) 2015-06-10
CN104103554A (en) 2014-10-15

Similar Documents

Publication Publication Date Title
HK1220317A1 (en) Energy management system
SG11201510051WA (en) Energy absorbing member
GB2527854B (en) Zero Energy Transportation System
EP2968981A4 (en) Energy degrader for radiation therapy system
SG11201704163UA (en) Energy absorption system and device
PL2965321T3 (en) Localised energy concentratoin
PL3025068T3 (en) Energy absorption device
PL3017115T3 (en) Systems and methods for absorbing energy
GB201413570D0 (en) Energy system
EP2984582A4 (en) Energy management system
SG2014006076A (en) Energy beam irradiation system and work transfer mechanism
IL245128A0 (en) Device for shaping laser radiation
GB201310888D0 (en) Energy absorber
GB2537744B (en) Solar energy system
GB201518868D0 (en) Energy generation system
EP2956723A4 (en) Energy system for dwellings
EP2949360A4 (en) Particle beam irradiation device, and particle beam therapy device provided therewith
IL241485A0 (en) An energy/power generation system
GB2525957B (en) Target device for neutron generating device, accelerator-excited neutron generating device and beam coupling method thereof
GB2576973B (en) Energy generation system
GB2576972B (en) Energy generation system
GB2574335B (en) Energy generation system
GB201322810D0 (en) Energy generating system
GB201909849D0 (en) Energy generation system
EP2954205A4 (en) Systems and methods for providing supplemental aqueous thermal energy