CN104094436B - 具有分布式光发射的有机发光二极场效应晶体管 - Google Patents

具有分布式光发射的有机发光二极场效应晶体管 Download PDF

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Publication number
CN104094436B
CN104094436B CN201380006607.4A CN201380006607A CN104094436B CN 104094436 B CN104094436 B CN 104094436B CN 201380006607 A CN201380006607 A CN 201380006607A CN 104094436 B CN104094436 B CN 104094436B
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lumo
homo
scn
scp
energy level
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Chinese (zh)
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CN104094436A (zh
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R·卡佩利
S·托法宁
G·吉纳拉利
M·穆西尼
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Etc i L LLC
POLYERA CORP
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ETC SRL
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
CN201380006607.4A 2012-02-27 2013-02-21 具有分布式光发射的有机发光二极场效应晶体管 Expired - Fee Related CN104094436B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2012A000284 2012-02-27
IT000284A ITMI20120284A1 (it) 2012-02-27 2012-02-27 Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita
PCT/IB2013/051400 WO2013128344A1 (en) 2012-02-27 2013-02-21 Organic light emitting ambipolar field effect transistor with distributed light emission

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CN104094436A CN104094436A (zh) 2014-10-08
CN104094436B true CN104094436B (zh) 2016-08-24

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CN201380006607.4A Expired - Fee Related CN104094436B (zh) 2012-02-27 2013-02-21 具有分布式光发射的有机发光二极场效应晶体管

Country Status (8)

Country Link
US (1) US9006726B2 (https=)
EP (1) EP2786437B1 (https=)
JP (1) JP6025874B2 (https=)
KR (1) KR101839649B1 (https=)
CN (1) CN104094436B (https=)
IT (1) ITMI20120284A1 (https=)
TW (1) TWI573305B (https=)
WO (1) WO2013128344A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
CN111146352B (zh) * 2014-07-24 2022-10-21 飞利斯有限公司 有机电致发光晶体管
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
CN106684153A (zh) * 2015-11-05 2017-05-17 中国科学院宁波材料技术与工程研究所 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
WO2020136420A1 (en) * 2018-12-27 2020-07-02 Bio-On S.P.A. Piezoelectric device comprising a membrane comprising fibres of a polyhydroxyalkanoate
CN111081740A (zh) * 2019-12-06 2020-04-28 深圳市华星光电半导体显示技术有限公司 一种显示面板
CN115207238B (zh) * 2022-07-01 2024-12-03 闽都创新实验室 一种具有光电双输出的发光突触晶体管及其制备方法
TWI864513B (zh) * 2022-11-30 2024-12-01 國立成功大學 發光裝置及發光裝置之製備方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1398146A (zh) * 2002-08-13 2003-02-19 清华大学 一种有机电致发光器件
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
CN1906777A (zh) * 2004-05-11 2007-01-31 Lg化学株式会社 有机电子器件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970490B2 (en) 2002-05-10 2005-11-29 The Trustees Of Princeton University Organic light emitting devices based on the formation of an electron-hole plasma
ATE500624T1 (de) 2003-03-28 2011-03-15 Michele Muccini Organische elektrolumineszente vorrichtung
WO2007050049A1 (en) 2004-09-14 2007-05-03 Northwestern University Carbonyl-functionalized thiophene compounds and related device structures
JP5337490B2 (ja) * 2006-11-14 2013-11-06 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
EP2340576A2 (en) 2008-10-29 2011-07-06 Koninklijke Philips Electronics N.V. Dual gate field-effect transistor and method of producing a dual gate field-effect transistor
WO2011074232A1 (ja) * 2009-12-14 2011-06-23 出光興産株式会社 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ
JP5588559B2 (ja) * 2010-03-20 2014-09-10 ポリエラ コーポレイション ピロロ［３，２−ｂ］ピロール半導体化合物およびそれを組み込んだデバイス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1398146A (zh) * 2002-08-13 2003-02-19 清华大学 一种有机电致发光器件
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
CN1906777A (zh) * 2004-05-11 2007-01-31 Lg化学株式会社 有机电子器件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes;Raffaella Capelli 等;《nature materials》;20100601;第9卷(第6期);496-503页 *

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Publication number Publication date
WO2013128344A1 (en) 2013-09-06
US9006726B2 (en) 2015-04-14
KR20140126699A (ko) 2014-10-31
ITMI20120284A1 (it) 2013-08-28
JP2015513795A (ja) 2015-05-14
TW201349606A (zh) 2013-12-01
TWI573305B (zh) 2017-03-01
KR101839649B1 (ko) 2018-03-16
US20150001518A1 (en) 2015-01-01
JP6025874B2 (ja) 2016-11-16
EP2786437A1 (en) 2014-10-08
EP2786437B1 (en) 2015-03-25
CN104094436A (zh) 2014-10-08

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