TWI573305B - 具有分佈式發光性能之有機發光雙極性場效電晶體 - Google Patents

具有分佈式發光性能之有機發光雙極性場效電晶體 Download PDF

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TWI573305B
TWI573305B TW102106218A TW102106218A TWI573305B TW I573305 B TWI573305 B TW I573305B TW 102106218 A TW102106218 A TW 102106218A TW 102106218 A TW102106218 A TW 102106218A TW I573305 B TWI573305 B TW I573305B
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TW
Taiwan
Prior art keywords
lumo
homo
scp
scn
difference
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TW102106218A
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English (en)
Chinese (zh)
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TW201349606A (zh
Inventor
羅菲拉 卡貝利
史帝法諾 托法寧
潔安路卡 潔納羅利
蜜雪兒 慕奇尼
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Etc公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/30Organic light-emitting transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/30Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311Purifying organic semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/346Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/655Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
TW102106218A 2012-02-27 2013-02-22 具有分佈式發光性能之有機發光雙極性場效電晶體 TWI573305B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000284A ITMI20120284A1 (it) 2012-02-27 2012-02-27 Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita

Publications (2)

Publication Number Publication Date
TW201349606A TW201349606A (zh) 2013-12-01
TWI573305B true TWI573305B (zh) 2017-03-01

Family

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Family Applications (1)

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TW102106218A TWI573305B (zh) 2012-02-27 2013-02-22 具有分佈式發光性能之有機發光雙極性場效電晶體

Country Status (8)

Country Link
US (1) US9006726B2 (https=)
EP (1) EP2786437B1 (https=)
JP (1) JP6025874B2 (https=)
KR (1) KR101839649B1 (https=)
CN (1) CN104094436B (https=)
IT (1) ITMI20120284A1 (https=)
TW (1) TWI573305B (https=)
WO (1) WO2013128344A1 (https=)

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EP2911214B1 (en) 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
CN111146352B (zh) * 2014-07-24 2022-10-21 飞利斯有限公司 有机电致发光晶体管
EP3021373A1 (en) * 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
CN106684153A (zh) * 2015-11-05 2017-05-17 中国科学院宁波材料技术与工程研究所 自驱动发光薄膜晶体管,薄膜晶体管阵列及显示装置
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
WO2020136420A1 (en) * 2018-12-27 2020-07-02 Bio-On S.P.A. Piezoelectric device comprising a membrane comprising fibres of a polyhydroxyalkanoate
CN111081740A (zh) * 2019-12-06 2020-04-28 深圳市华星光电半导体显示技术有限公司 一种显示面板
CN115207238B (zh) * 2022-07-01 2024-12-03 闽都创新实验室 一种具有光电双输出的发光突触晶体管及其制备方法
TWI864513B (zh) * 2022-11-30 2024-12-01 國立成功大學 發光裝置及發光裝置之製備方法

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US6970490B2 (en) * 2002-05-10 2005-11-29 The Trustees Of Princeton University Organic light emitting devices based on the formation of an electron-hole plasma
EP1609195B9 (en) 2003-03-28 2011-08-31 Michele Muccini Organic electroluminescence devices
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
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R. Capelli et al., "Organic light-emitting transistors with an effeciency that outperform the equivalent light-emitting diodes", Nature Materials 9, pp. 496-503, 2010 *

Also Published As

Publication number Publication date
JP6025874B2 (ja) 2016-11-16
ITMI20120284A1 (it) 2013-08-28
CN104094436B (zh) 2016-08-24
KR101839649B1 (ko) 2018-03-16
JP2015513795A (ja) 2015-05-14
WO2013128344A1 (en) 2013-09-06
US20150001518A1 (en) 2015-01-01
CN104094436A (zh) 2014-10-08
TW201349606A (zh) 2013-12-01
US9006726B2 (en) 2015-04-14
EP2786437B1 (en) 2015-03-25
KR20140126699A (ko) 2014-10-31
EP2786437A1 (en) 2014-10-08

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