CN104078348A - 一种硅片单面膜层的去除方法 - Google Patents
一种硅片单面膜层的去除方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- 230000003628 erosive effect Effects 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
本发明公开了一种硅片单面膜层的去除方法,包括以下步骤:A、使用保护介质将待处理硅片不需要去除膜层的正面覆盖,确保硅片正面不受腐蚀;B、将步骤A的硅片置于具有腐蚀性蒸汽的环境中,利用蒸汽将硅片背面的待去除膜层腐蚀去除;C、采用去离子水对步骤B中腐蚀后的硅片进行清洗。本发明与现有技术相比的优点是:溶液用量小,成本低,污染少;与传统浸入溶液腐蚀方法相比,气体腐蚀对正面保护层要求低,正面保护层制作简单,而且容易去除;本方法更容易实现流水线作业,产量高;对设备机械精度容忍度很高,节约了设备制造成本,同时工艺稳定,容易控制。本发明适用性广,适合各种规格硅片上多种膜层的单面去除。
Description
技术领域
本发明涉及半导体集成工艺及太阳能电池片制作工艺领域,尤其涉及一种硅片单面膜层的去除方法。
背景技术
现有半导体和太阳能电池工艺技术中,硅片表面生长(淀积)膜层的做法是非常普遍的,但是在长膜工艺过程中,硅片两面往往都会伴随有膜层,而背面的膜层常会给工艺带来不利的影响,需要去除。目前常用单面去膜技术的缺点是工艺流程复杂,腐蚀液用量大,容易造成环境污染,成本高,产量低。
发明内容
本发明是为了解决上述不足,提供了一种硅片单面膜层的去除方法。
本发明的上述目的通过以下的技术方案来实现:一种硅片单面膜层的去除方法,包括以下步骤:
A、使用保护介质将待处理硅片不需要去除膜层的正面覆盖,确保硅片正面不受腐蚀;
B、将步骤A的硅片置于具有腐蚀性蒸汽的环境中,利用蒸汽将硅片背面的待去除膜层腐蚀去除;
C、采用去离子水对步骤B中腐蚀后的硅片进行清洗。
步骤A中的保护介质可以是液体,如水、乙醇等;也可以是惰性固体,如细沙、橡胶等。
步骤B中的待去除膜层可以是二氧化硅膜、磷硅玻璃、硼硅玻璃,氮化硅膜、二氧化钛膜或三氧化二铝膜等。
步骤B中的腐蚀性蒸汽来源于易挥发的腐蚀性溶液,所述腐蚀液可以是酸液及其混合液,也可以是碱液及其混合液;腐蚀液挥发出的蒸汽可以腐蚀硅片表面膜层,但是不腐蚀硅材料,也不会破坏正面保护层。
本发明与现有技术相比的优点是:本发明采用腐蚀性溶液挥发出的蒸汽进行单面膜层的腐蚀,溶液用量小,成本低,污染少;与传统浸入溶液腐蚀方法相比,气体腐蚀对正面保护层要求低,正面保护层制作简单,而且容易去除;本方法更容易实现流水线作业,产量高;对设备机械精度容忍度很高,节约了设备制造成本,同时工艺稳定,容易控制。本发明适用性广,适合各种规格硅片上多种膜层的单面去除。
具体实施方式
下面对本发明进一步详述:
实施例1:
表面带有20nm二氧化硅薄膜的硅片,正面向下水平置于传送带上,经过HF蒸汽环境,进行1分钟的腐蚀,上述过程中硅片正面受到直接接触的传送带保护,腐蚀性气体无法侵入;背面向上暴露在HF蒸汽环境中,二氧化硅膜层被腐蚀。然后经去离子水进行清洗。实现单面膜层的去除。
实施例2:
表面带有70nm氮化硅薄膜的硅片,正面向上置于间隔传送滚轮上,表面喷洒保护性液体,经过HF蒸汽环境,进行2分钟的腐蚀,上述过程中硅片正面受到保护液的覆盖,腐蚀性气体无法侵入;而背面在传送过程受到HF蒸汽的腐蚀,氮化硅硅膜层被腐蚀。然后经去离子水进行清洗。实现单面膜层的去除。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (4)
1.一种硅片单面膜层的去除方法,其特征在于:包括以下步骤:
A、使用保护介质将待处理硅片不需要去除膜层的正面覆盖,确保硅片正面不受腐蚀;
B、将步骤A的硅片置于具有腐蚀性蒸汽的环境中,利用蒸汽将硅片背面的待去除膜层腐蚀去除;
C、采用去离子水对步骤B中腐蚀后的硅片进行清洗。
2.根据权利要求1所述的一种硅片单面膜层的去除方法,其特征在于:步骤A中的保护介质为水、乙醇、细沙或橡胶。
3.根据权利要求1所述的一种硅片单面膜层的去除方法,其特征在于:步骤B中的待去除膜层为二氧化硅膜、磷硅玻璃、硼硅玻璃,氮化硅膜、二氧化钛膜或三氧化二铝膜。
4.根据权利要求1所述的一种硅片单面膜层的去除方法,其特征在于:步骤B中的腐蚀性蒸汽来源于易挥发的腐蚀性溶液,所述腐蚀液为酸液及其混合液或碱液及其混合液。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112830445A (zh) * | 2020-12-31 | 2021-05-25 | 上海芯物科技有限公司 | 一种半导体结构及其制作方法 |
CN113550012A (zh) * | 2021-07-28 | 2021-10-26 | 浙江大学杭州国际科创中心 | 一种用于碱蒸汽腐蚀碳化硅晶片的装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112830445A (zh) * | 2020-12-31 | 2021-05-25 | 上海芯物科技有限公司 | 一种半导体结构及其制作方法 |
CN113550012A (zh) * | 2021-07-28 | 2021-10-26 | 浙江大学杭州国际科创中心 | 一种用于碱蒸汽腐蚀碳化硅晶片的装置 |
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