CN102522436A - 用于测试体寿命的硅片及其制作方法和体寿命测试方法 - Google Patents
用于测试体寿命的硅片及其制作方法和体寿命测试方法 Download PDFInfo
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- CN102522436A CN102522436A CN2011104577476A CN201110457747A CN102522436A CN 102522436 A CN102522436 A CN 102522436A CN 2011104577476 A CN2011104577476 A CN 2011104577476A CN 201110457747 A CN201110457747 A CN 201110457747A CN 102522436 A CN102522436 A CN 102522436A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 83
- 239000010703 silicon Substances 0.000 title claims abstract description 83
- 238000012360 testing method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000010998 test method Methods 0.000 title abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 230000008719 thickening Effects 0.000 claims abstract description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000003518 caustics Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NBGBEUITCPENLJ-UHFFFAOYSA-N Bunazosin hydrochloride Chemical compound Cl.C1CN(C(=O)CCC)CCCN1C1=NC(N)=C(C=C(OC)C(OC)=C2)C2=N1 NBGBEUITCPENLJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 229940098465 tincture Drugs 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110457747.6A CN102522436B (zh) | 2011-12-30 | 2011-12-30 | 用于测试体寿命的硅片及其制作方法和体寿命测试方法 |
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CN201110457747.6A CN102522436B (zh) | 2011-12-30 | 2011-12-30 | 用于测试体寿命的硅片及其制作方法和体寿命测试方法 |
Publications (2)
Publication Number | Publication Date |
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CN102522436A true CN102522436A (zh) | 2012-06-27 |
CN102522436B CN102522436B (zh) | 2015-07-22 |
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CN201110457747.6A Active CN102522436B (zh) | 2011-12-30 | 2011-12-30 | 用于测试体寿命的硅片及其制作方法和体寿命测试方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102759695A (zh) * | 2012-07-10 | 2012-10-31 | 江西赛维Ldk太阳能高科技有限公司 | 一种判断硅块质量的方法及装置 |
CN104359737A (zh) * | 2014-11-21 | 2015-02-18 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN113552462A (zh) * | 2021-07-08 | 2021-10-26 | 麦斯克电子材料股份有限公司 | 关于n型硅片测试寿命、样品厚度与体寿命之间对应关系的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0148065A2 (fr) * | 1983-12-14 | 1985-07-10 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Composant semiconducteur rapide, notamment diode pin haute tension |
US4963500A (en) * | 1988-02-02 | 1990-10-16 | Sera Solar Corporation | Method of monitoring semiconductor manufacturing processes and test sample therefor |
US6071652A (en) * | 1997-03-21 | 2000-06-06 | Digital Optics Corporation | Fabricating optical elements using a photoresist formed from contact printing of a gray level mask |
US20020003918A1 (en) * | 2000-03-08 | 2002-01-10 | Ooi Boon Siew | Quantum well intermixing |
CN100561683C (zh) * | 2007-11-16 | 2009-11-18 | 中国科学院电工研究所 | 一种测量晶体硅体少子寿命的化学钝化方法 |
CN101592469B (zh) * | 2009-07-08 | 2010-12-01 | 中电电气(南京)光伏有限公司 | 太阳能电池硅片损伤层厚度和少子寿命测量方法及装置 |
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2011
- 2011-12-30 CN CN201110457747.6A patent/CN102522436B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0148065A2 (fr) * | 1983-12-14 | 1985-07-10 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Composant semiconducteur rapide, notamment diode pin haute tension |
US4963500A (en) * | 1988-02-02 | 1990-10-16 | Sera Solar Corporation | Method of monitoring semiconductor manufacturing processes and test sample therefor |
US6071652A (en) * | 1997-03-21 | 2000-06-06 | Digital Optics Corporation | Fabricating optical elements using a photoresist formed from contact printing of a gray level mask |
US20020003918A1 (en) * | 2000-03-08 | 2002-01-10 | Ooi Boon Siew | Quantum well intermixing |
CN100561683C (zh) * | 2007-11-16 | 2009-11-18 | 中国科学院电工研究所 | 一种测量晶体硅体少子寿命的化学钝化方法 |
CN101592469B (zh) * | 2009-07-08 | 2010-12-01 | 中电电气(南京)光伏有限公司 | 太阳能电池硅片损伤层厚度和少子寿命测量方法及装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102759695A (zh) * | 2012-07-10 | 2012-10-31 | 江西赛维Ldk太阳能高科技有限公司 | 一种判断硅块质量的方法及装置 |
CN102759695B (zh) * | 2012-07-10 | 2015-10-28 | 江西赛维Ldk太阳能高科技有限公司 | 一种判断硅块质量的方法及装置 |
CN104359737A (zh) * | 2014-11-21 | 2015-02-18 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN104359737B (zh) * | 2014-11-21 | 2017-08-25 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN113552462A (zh) * | 2021-07-08 | 2021-10-26 | 麦斯克电子材料股份有限公司 | 关于n型硅片测试寿命、样品厚度与体寿命之间对应关系的方法 |
CN113552462B (zh) * | 2021-07-08 | 2023-03-14 | 麦斯克电子材料股份有限公司 | 获得n型硅片厚度和测试寿命与体寿命间对应关系的方法 |
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CN102522436B (zh) | 2015-07-22 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
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