CN102522436B - 用于测试体寿命的硅片及其制作方法和体寿命测试方法 - Google Patents
用于测试体寿命的硅片及其制作方法和体寿命测试方法 Download PDFInfo
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- CN102522436B CN102522436B CN201110457747.6A CN201110457747A CN102522436B CN 102522436 B CN102522436 B CN 102522436B CN 201110457747 A CN201110457747 A CN 201110457747A CN 102522436 B CN102522436 B CN 102522436B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
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CN201110457747.6A CN102522436B (zh) | 2011-12-30 | 2011-12-30 | 用于测试体寿命的硅片及其制作方法和体寿命测试方法 |
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CN201110457747.6A CN102522436B (zh) | 2011-12-30 | 2011-12-30 | 用于测试体寿命的硅片及其制作方法和体寿命测试方法 |
Publications (2)
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CN102522436A CN102522436A (zh) | 2012-06-27 |
CN102522436B true CN102522436B (zh) | 2015-07-22 |
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CN201110457747.6A Active CN102522436B (zh) | 2011-12-30 | 2011-12-30 | 用于测试体寿命的硅片及其制作方法和体寿命测试方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102759695B (zh) * | 2012-07-10 | 2015-10-28 | 江西赛维Ldk太阳能高科技有限公司 | 一种判断硅块质量的方法及装置 |
CN104359737B (zh) * | 2014-11-21 | 2017-08-25 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN113552462B (zh) * | 2021-07-08 | 2023-03-14 | 麦斯克电子材料股份有限公司 | 获得n型硅片厚度和测试寿命与体寿命间对应关系的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963500A (en) * | 1988-02-02 | 1990-10-16 | Sera Solar Corporation | Method of monitoring semiconductor manufacturing processes and test sample therefor |
US6071652A (en) * | 1997-03-21 | 2000-06-06 | Digital Optics Corporation | Fabricating optical elements using a photoresist formed from contact printing of a gray level mask |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2556882B1 (fr) * | 1983-12-14 | 1986-05-23 | Fairchild Camera Instr Co | Composant semiconducteur rapide, notamment diode pin haute tension |
BR0109069A (pt) * | 2000-03-08 | 2004-12-07 | Ntu Ventures Pte Ltd | Processo para fabricar um circuito integrado fotÈnico |
CN100561683C (zh) * | 2007-11-16 | 2009-11-18 | 中国科学院电工研究所 | 一种测量晶体硅体少子寿命的化学钝化方法 |
CN101592469B (zh) * | 2009-07-08 | 2010-12-01 | 中电电气(南京)光伏有限公司 | 太阳能电池硅片损伤层厚度和少子寿命测量方法及装置 |
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2011
- 2011-12-30 CN CN201110457747.6A patent/CN102522436B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963500A (en) * | 1988-02-02 | 1990-10-16 | Sera Solar Corporation | Method of monitoring semiconductor manufacturing processes and test sample therefor |
US6071652A (en) * | 1997-03-21 | 2000-06-06 | Digital Optics Corporation | Fabricating optical elements using a photoresist formed from contact printing of a gray level mask |
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CN102522436A (zh) | 2012-06-27 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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