CN104067345B - 经改善低电压写入速度位单元 - Google Patents

经改善低电压写入速度位单元 Download PDF

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Publication number
CN104067345B
CN104067345B CN201380005949.4A CN201380005949A CN104067345B CN 104067345 B CN104067345 B CN 104067345B CN 201380005949 A CN201380005949 A CN 201380005949A CN 104067345 B CN104067345 B CN 104067345B
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pfet
nfet
pass
drain
gate
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Chinese (zh)
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CN104067345A (zh
Inventor
乔舒亚·L·帕克特
马尼什·加尔吉
哈里什·尚卡尔
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN201380005949.4A 2012-01-23 2013-01-23 经改善低电压写入速度位单元 Active CN104067345B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261589570P 2012-01-23 2012-01-23
US61/589,570 2012-01-23
US13/746,528 2013-01-22
US13/746,528 US9093125B2 (en) 2012-01-23 2013-01-22 Low voltage write speed bitcell
PCT/US2013/022777 WO2013126172A1 (en) 2012-01-23 2013-01-23 Improved low voltage write speed bitcell

Publications (2)

Publication Number Publication Date
CN104067345A CN104067345A (zh) 2014-09-24
CN104067345B true CN104067345B (zh) 2017-05-03

Family

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CN201380005949.4A Active CN104067345B (zh) 2012-01-23 2013-01-23 经改善低电压写入速度位单元

Country Status (8)

Country Link
US (1) US9093125B2 (enExample)
EP (1) EP2807649B1 (enExample)
JP (1) JP6038956B2 (enExample)
KR (1) KR101601827B1 (enExample)
CN (1) CN104067345B (enExample)
IN (1) IN2014CN04993A (enExample)
TW (1) TWI537945B (enExample)
WO (1) WO2013126172A1 (enExample)

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US9335775B2 (en) * 2014-06-23 2016-05-10 International Business Machines Corporation Integrated circuit having regulated voltage island power system
US9251875B1 (en) 2014-09-26 2016-02-02 Qualcomm Incorporated Register file circuit and method for improving the minimum operating supply voltage
US9384825B2 (en) * 2014-09-26 2016-07-05 Qualcomm Incorporated Multi-port memory circuits
US9583180B2 (en) * 2015-06-05 2017-02-28 Cisco Technology, Inc. Low-power row-oriented memory write assist circuit
US9646681B1 (en) 2016-04-25 2017-05-09 Qualcomm Incorporated Memory cell with improved write margin
US10163524B2 (en) 2016-06-22 2018-12-25 Darryl G. Walker Testing a semiconductor device including a voltage detection circuit and temperature detection circuit that can be used to generate read assist and/or write assist in an SRAM circuit portion and method therefor
US9940999B2 (en) 2016-06-22 2018-04-10 Darryl G. Walker Semiconductor devices, circuits and methods for read and/or write assist of an SRAM circuit portion based on voltage detection and/or temperature detection circuits
US9786364B1 (en) * 2016-12-16 2017-10-10 Stmicroelectronics International N.V. Low voltage selftime tracking circuitry for write assist based memory operation
KR102021601B1 (ko) * 2017-09-22 2019-09-16 경북대학교 산학협력단 초저전압 메모리 장치 및 그 동작 방법
US10446223B1 (en) * 2018-08-29 2019-10-15 Bitfury Group Limited Data storage apparatus, and related systems and methods
US11074966B2 (en) * 2018-10-31 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd Method and system to balance ground bounce
US11183234B2 (en) * 2019-11-25 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Bitcell supporting bit-write-mask function
CN111951849A (zh) * 2020-08-20 2020-11-17 海光信息技术有限公司 存储单元、随机静态存储器及寄存器堆
US11955171B2 (en) 2021-09-15 2024-04-09 Mavagail Technology, LLC Integrated circuit device including an SRAM portion having end power select circuits
CN116798474A (zh) * 2022-03-17 2023-09-22 长鑫存储技术有限公司 电子设备及其驱动方法
CN118629457A (zh) * 2024-08-12 2024-09-10 苏州宽温电子科技有限公司 一种9t-sram单元、数据存取方法及芯片

Citations (7)

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JPS58122693A (ja) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> メモリ回路
JPH02108297A (ja) * 1988-10-18 1990-04-20 Nippon Telegr & Teleph Corp <Ntt> メモリセル回路
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same
JP2006209945A (ja) * 2005-01-31 2006-08-10 Toshiba Corp メモリセルおよびメモリセルの安定化方法
JP2007172715A (ja) * 2005-12-20 2007-07-05 Fujitsu Ltd 半導体記憶装置およびその制御方法
US7460400B1 (en) * 2007-08-22 2008-12-02 Nscore Inc. Nonvolatile memory utilizing MIS memory transistors with bit mask function
US7718482B2 (en) * 2007-10-10 2010-05-18 Texas Instruments Incorporated CD gate bias reduction and differential N+ poly doping for CMOS circuits

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JP4198201B2 (ja) 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
FR2793064B1 (fr) * 1999-04-30 2004-01-02 St Microelectronics Sa Memoire a courant de fuite reduit
JP5076462B2 (ja) * 2005-12-28 2012-11-21 ソニー株式会社 半導体メモリデバイス
US7269055B2 (en) 2006-02-13 2007-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM device with reduced leakage current
US7324368B2 (en) 2006-03-30 2008-01-29 Arm Limited Integrated circuit memory with write assist
US20070268740A1 (en) * 2006-05-12 2007-11-22 Aly Rami E Ultra low power SRAM cell design
US7512030B2 (en) * 2006-08-29 2009-03-31 Texas Instruments Incorporated Memory with low power mode for WRITE
US7630228B2 (en) 2007-08-30 2009-12-08 Intel Corporation Methods and apparatuses for operating memory
US20090086556A1 (en) 2007-09-27 2009-04-02 Sapumal Wijeratne Methods and apparatuses for operating memory
TWI346338B (en) * 2007-10-23 2011-08-01 Nat Univ Tsing Hua Access unit for a static random accesss memory
US7852661B2 (en) * 2008-10-22 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Write-assist SRAM cell
US7839173B1 (en) 2009-08-11 2010-11-23 Xilinx, Inc. High speed, low power signal level shifter
US8320203B2 (en) 2010-03-26 2012-11-27 Intel Corporation Method and system to lower the minimum operating voltage of register files
JP2011248932A (ja) * 2010-05-21 2011-12-08 Panasonic Corp 半導体記憶装置
US8462542B2 (en) * 2010-06-24 2013-06-11 Texas Instruments Incorporated Bit-by-bit write assist for solid-state memory
US8406077B2 (en) 2010-07-01 2013-03-26 Qualcomm Incorporated Multi-voltage level, multi-dynamic circuit structure device
US8451652B2 (en) * 2010-12-02 2013-05-28 Lsi Corporation Write assist static random access memory cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122693A (ja) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> メモリ回路
JPH02108297A (ja) * 1988-10-18 1990-04-20 Nippon Telegr & Teleph Corp <Ntt> メモリセル回路
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same
JP2006209945A (ja) * 2005-01-31 2006-08-10 Toshiba Corp メモリセルおよびメモリセルの安定化方法
JP2007172715A (ja) * 2005-12-20 2007-07-05 Fujitsu Ltd 半導体記憶装置およびその制御方法
US7460400B1 (en) * 2007-08-22 2008-12-02 Nscore Inc. Nonvolatile memory utilizing MIS memory transistors with bit mask function
US7718482B2 (en) * 2007-10-10 2010-05-18 Texas Instruments Incorporated CD gate bias reduction and differential N+ poly doping for CMOS circuits

Also Published As

Publication number Publication date
KR20140120919A (ko) 2014-10-14
KR101601827B1 (ko) 2016-03-09
EP2807649B1 (en) 2020-02-19
US20130188434A1 (en) 2013-07-25
US9093125B2 (en) 2015-07-28
CN104067345A (zh) 2014-09-24
IN2014CN04993A (enExample) 2015-09-18
TWI537945B (zh) 2016-06-11
JP2015504228A (ja) 2015-02-05
EP2807649A1 (en) 2014-12-03
TW201346907A (zh) 2013-11-16
WO2013126172A1 (en) 2013-08-29
JP6038956B2 (ja) 2016-12-07

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