CN104064655A - Led封装体及其制造方法 - Google Patents

Led封装体及其制造方法 Download PDF

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CN104064655A
CN104064655A CN201310095063.5A CN201310095063A CN104064655A CN 104064655 A CN104064655 A CN 104064655A CN 201310095063 A CN201310095063 A CN 201310095063A CN 104064655 A CN104064655 A CN 104064655A
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layer
conducting wire
led
crystal grain
packaging body
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CN104064655B (zh
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林贞秀
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Lite On Electronics Guangzhou Co Ltd
Lite On Technology Corp
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Lite On Electronics Guangzhou Co Ltd
Lite On Technology Corp
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Abstract

本发明是有关于一种LED封装体制造方法，包含以下步骤：在基板上形成导电线路层；以网印方式在该导电线路层形成不透明的墙体层，且该墙体层呈格状而形成多个围墙单元，使每一个围墙单元围绕区域内的该导电线路层露出；在每一个围墙单元内的导电线路层上固定并电连接至少一个LED晶粒；以模制成型方式形成透光胶体层，且该透光胶体层覆盖设置于导电线路层上的所述LED晶粒；及对应每一个围墙单元裁切形成多个LED封装体。通过网印方式在基板上形成墙体层，固晶后只需一次模制成型，不需二次切割，改善切割毛边所造成透光胶体层与墙体层介面的接着、剥离问题。

Description

LED封装体及其制造方法
技术领域
本发明涉及一种LED封装体，特别是涉及一种具反射杯（reflector）的LED封装体及其制造方法。
背景技术
参阅图1，现有的提高发光二极管发光效率的方式，除了在传统支架上射出成型塑料反射杯来增加反射率外，亦有如美国专利公告号7687292的发明，在基板91上固定LED晶粒92后，先以模制成型（molding）方式形成荧光胶体层93，经过切割荧光胶体层产生沟槽94后，再次进行模制成型，形成白色硅胶层95以增加反射效果，再次切割而成为LED封装体。但是多道模制成型对刀具的损耗较大、成本较高，且切割工艺容易造成荧光胶与白色硅胶的交界面有因切割毛边造成的不平整的状态，导致日后容易入侵水汽或是产生剥离等使得产品良率不佳的情形。
由此可见，上述现有的LED封装体及其制造方法在使用上，显然仍存在有不便与缺陷，而亟待加以进一步改进。
发明内容
本发明的目的在于提供一种LED封装体制造方法,其可以避免切割荧光胶体层而产生的毛边问题。
本发明的另一目的在于提供一种前述制造方法所制成的LED封装体。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。本发明LED封装体制造方法，包含以下步骤：在基板上形成导电线路层；还包含：
以网印方式在该导电线路层形成不透明的墙体层，且该墙体层呈格状而形成多个围墙单元，使每一个围墙单元围绕区域内的该导电线路层露出；
在每一个围墙单元内的导电线路层上固定并电连接至少一个LED晶粒；
以模制成型方式形成透光胶体层，且该透光胶体层覆盖设置于导电线路层上的所述LED晶粒；及
对应每一个围墙单元裁切形成多个LED封装体。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。
较佳地，前述的LED封装体制造方法，其中在该导电线路层上预定形成该墙体层的区域先形成垫高层，再将该墙体层形成于该垫高层上，该垫高层及该墙体层的整体高度大于所述LED晶粒的高度。
较佳地，前述的LED封装体制造方法，其中该导电线路层与该垫高层为相同材质，且该垫高层与该导电线路层的表面还被覆有高反射层。
较佳地，前述的LED封装体制造方法，其中每一个围墙单元具有外围墙及分隔墙，以将所围绕的导电线路层界定出固晶区及附属元件区；该LED晶粒固定于该固晶区，且该步骤在每一附属元件区还固定并电连接齐纳二极管。
较佳地，前述的LED封装体制造方法，其中该墙体层的材料是选自高反射的白色硅胶或油墨。
本发明的目的及解决其技术问题还采用以下技术方案来实现的。本发明LED封装体，包含：板部、导电线路层、围墙单元、至少一个LED晶粒及透光胶体层。其中，该导电线路层形成于该板部上；该围墙单元以网印方式形成于该导电线路层上，且将所围绕区域内的该导电线路层露出；该LED晶粒固定在围墙单元内并电连接于该导电线路层；且该透光胶体层以模制成型方式形成，覆盖设置于该导电线路层上的LED晶粒。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。
较佳地，前述的LED封装体，其中该围墙单元具有外围墙及分隔墙，并将该导电线路层界定出固晶区及附属元件区；该LED晶粒固定并电连接于该固晶区；该LED封装体还包含固定并电连接于该附属元件区的齐纳二极管。
较佳地，前述的LED封装体，其还包括形成于该导电线路层与该围墙单元间的垫高层，且该垫高层及该围墙单元的整体高度大于该LED晶粒的高度。
较佳地，前述的LED封装体，其中该垫高层与该导电线路层由相同材质制成，且该垫高层与该导电线路层的表面被覆有高反射层。
较佳地，前述的LED封装体，其中该围墙单元的材料是选自高反射的白色硅胶或油墨。
借由上述技术方案，本发明的有益效果在于：通过网印方式在基板上形成墙体层，固晶后只需一次模制成型，减少切割次数及刀具损耗，改善因切割毛边所造成透光胶体层与墙体层介面的接着、剥离问题，有效防止水汽入侵，成为气密性佳的高性赖度产品。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图,详细说明如下。
附图说明
图1是流程示意图，说明先前技术。
图2是流程示意图，说明本发明LED封装体制造方法的第一较佳实施例。
图3是立体示意图，说明该第一较佳实施例切割前的状态。
图4是分解立体示意图，说明该第一较佳实施例的LED封装体。
图5是剖视示意图，说明该第一较佳实施例的尺寸关系。
图6是流程示意图，说明本发明LED封装体制造方法的第二较佳实施例省略垫高层的实施状态。
图7至图9是示意说明该第二较佳实施例。
图10、图11及图12是示意说明本发明LED封装体制造方法的第三较佳实施例使用垂直型LED晶粒的实施状态。
图13是截面示意图，说明本发明LED封装体制造方法的第四较佳实施例形成高反射层的步骤S21。
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例，对依据本发明提出的一种LED封装体及其制造方法的具体实施方式、结构、特征及其功效，详细说明如后。
在本发明被详细描述之前，要注意的是，在以下的说明内容中，类似的元件是以相同的编号来表示。
参阅图2至图4，本发明LED封装体制造方法的第一较佳实施例，包含以下步骤：
步骤S1─在基板1上形成导电线路层2。在本实施例，导电线路层2以电镀铜工艺所形成，并形成于基板1的上表面，具有正、负电极201、202区，而在基板1的下表面以相同方式形成焊垫203、204。此外，基板1在特定位置预先设置穿孔，而在电镀铜工艺时将铜镀满穿孔形成导电柱205、206(仅示于图4)，用以分别连接导电线路层2的正、负电极201、202及焊垫203、204。
步骤S2─在该导电线路层2上预定形成后述墙体层3的区域先形成垫高层24。垫高层24同样以电镀铜工艺形成，在导电线路层2的部分区域进一步沉积铜所形成，故垫高层24较导电线路层2凸出。
步骤S3─以网印方式在垫高层24上形成不透明的墙体层3，且该墙体层3呈格状而形成多个围墙单元30，使每一个围墙单元30围绕区域内的导电线路层2露出。在本实施例，每一个围墙单元30具有外围墙32及分隔墙33，以将所围绕的导电线路层2界定出固晶区21及附属元件区22。该墙体层3是使用反射率达80%以上的高反射白色硅胶或油墨进行网印工艺以及热处理，有利于LED晶粒41光线的反射。在本实施例中，白色硅胶是使用″SWB-4501″的型号，热处理的较佳条件为150℃2小时，油墨是使用显像型防焊油墨″PSR-4000WT03″，热处理的较佳条件为150℃1小时。材料的选择除了具高反射率以外，主要还以日后不易变色为考量，至于热处理的参数则依各材料有所不同，不以上述为限。
步骤S4─在每一个围墙单元30内的导电线路层2上的固晶区21固定并电连接LED晶粒41，在附属元件区22固定并电连接齐纳二极管42（Zenerdiode）。该LED晶粒41与导电线路层2的正、负电极201、202电连接的方式，可使用覆晶技术（Flip-Chip）直接接触电连接，或另行打线以金属线电连接。
步骤S5─以模制成型方式形成透光胶体层5，且该透光胶体层5覆盖设置于导电线路层2上的所述LED晶粒41及齐纳二极管42。该透光胶体层5可由混掺荧光粉的透明树脂所形成。或者该透光胶体层5可仅由透明树脂所形成，而在模制成型前先将荧光粉被覆于LED晶粒41表面。在其他实施状态中，透光胶体层5还可使用如透明硅胶，只要能顺利使光线传递并能隔离如水汽等外界干扰即可。透光胶体层5的顶面与LED晶粒41的顶面的垂直高度H较佳为150微米（μm），可使LED晶粒41与混掺荧光粉的透明树脂充分混光，可达到较佳的混光效果。
该透光胶体层5至少需覆盖LED晶粒41，使所述LED晶粒41发出的光线经该透光胶体层5，于该墙体层3反射后朝远离该基板1的方向射出而离开该透光胶体层5。在本实施例中，是对应整个基板1的范围均覆盖有该透光胶体层5。亦即，墙体层3上亦覆盖有透光胶体层5。
步骤S6─对应每一个围墙单元30裁切形成多个LED封装体6。借此，所完成的LED封装体6只在最后封装完成阶段裁切以形成独立的个体，而使透光胶体层5与墙体层3介面并无切割的工艺，可避免切割毛边所造成的如接着、剥离等问题，故可有效防止水汽入侵，成为气密性佳的高性赖度产品。
参阅图4，即为本发明LED封装体6的第一较佳实施例，包含板部10、导电线路层2、二个焊垫203、204、二个导电柱205、206、垫高层24、围墙单元30、LED晶粒41、齐纳二极管42及透光胶体层5。
板部10是由绝缘材质所制成。导电线路层2形成于该板部10上且由导电材质所制成，并具有呈块状而相间隔的正、负电极201、202。二个焊垫203、204相间隔地设于该板部10底面。所述导电柱205、206分别由该导电线路层2的正、负电极201、202底面向下贯穿该板部10并分别连接焊垫203、204，以将正、负电极201、202分别与焊垫203、204电连接。借此可将焊垫203、204直接焊接于电路板(未图示)，即可使正、负电极201、202与电路板电连接。
垫高层24形成于导电线路层2与围墙单元30之间，并与该导电线路层2由相同材质制成，在本实施例皆为铜制成。围墙单元30是由高反射的白色硅胶或油墨制成，具有外围墙32及分隔墙33，并将该导电线路层2界定出固晶区21及附属元件区22。
LED晶粒41固定并电连接于固晶区21，齐纳二极管42（Zener diode）固定并电连接于附属元件区22。在本实施例，LED晶粒41及齐纳二极管42以覆晶技术（Flip-Chip）直接与正、负电极201、202接触电连接，但是其亦可用打线方式以金属线与正、负电极201、202电连接。
透光胶体层5可由混掺荧光粉的透明树脂所形成，覆盖围墙单元30及其所围绕的区域，包括LED晶粒41、齐纳二极管42及导电线路层2露出的部分，而使LED晶粒41发出的光线经过透光胶体层5后，再由该外围墙32及分隔墙33反射后朝远离该板部10的方向射出而离开该透光胶体层5。
此外，围墙单元30的顶面高出LED晶粒41的顶面，并使LED晶粒41与其周围的外围墙32及分隔墙33相间隔，亦有利于LED晶粒41光线的反射。借由分隔墙33阻隔LED晶粒41与齐纳二极管42，也可降低齐纳二极管42对LED晶粒41的吸光效应。另外，由于使用网印方式来形成围墙单元30，围墙单元30的转角处会形成圆角，并非直角。
参阅图5，本实施例中，该垫高层24的高度L1约为100至200微米（μm），围墙单元30高出LED晶粒41的顶面的高度L2约为25至100微米，LED晶粒41与围墙单元30的距离L3可介于150至500微米，但上述尺寸L1、L2、L3可视需要而弹性调整，不以此为限。此外，围墙单元30与垫高层24交界的位置较佳地是位于LED晶粒41高度的2/3，即L1的尺寸较佳地位于LED晶粒41高度的2/3，可使LED封装体6具有较佳的取光效率。图5中并以箭头标示光线的可能走向。
参阅图6至图9，本发明LED封装体制造方法及LED封装体6的第二较佳实施例，与第一较佳实施例大致相同，其差异在于，在第二较佳实施例省略垫高层24。也就是说，以制造方法的实施步骤而言，如图6所示步骤S71至S75，相较于第一较佳实施例省略了步骤S2(见图2)，而使墙体层3直接形成在导电线路层2上，且形成多个围墙单元30。以LED封装体6而言，在第二较佳实施例围墙单元30直接形成于导电线路层2上，但是透光胶体层5仍然覆盖围墙单元30、LED晶粒41、齐纳二极管42及导电线路层2露出的部分。
虽然受限于网印技术的网印厚度，在没有垫高层24加高的情况下，使得围墙单元30整体的高度低于LED晶粒41及齐纳二极管42(如图9所示)，亦即，围墙单元30的顶面低于LED晶粒41及齐纳二极管42的顶面。然而，在本实施例中，围墙单元30仍具有反射LED晶粒41发出的光线的效果。
参阅图10至图11，本发明LED封装体制造方法及LED封装体6的第三较佳实施例，与第一较佳实施例大致相同，其差异在于，在第三较佳实施例，每一个围墙单元30仅具有外围墙32，而没有分隔墙33，因此仅将导电线路层2围绕出固晶区21。再者，在本实施例，未设置齐纳二极管42。另外，所使用的LED晶粒41为垂直型LED(vertical LED)晶粒，该垂直型LED晶粒41的底面电极直接接触导电线路层2的正电极201而电连接，顶面电极则以打线方式电连接导电线路层2的负电极202。同样地，正、负电极201、202借由导电柱205、206分别与焊垫203、204电连接。
参阅图12，值得注意的是，由于本发明是使用电镀及网印方式分别形成导电线路层2和墙体层3，故导电线路层2和墙体层3的总高度可能会比打线高度来的低，所以利用模制成型方式设置透光胶体层5时，导电线路层2、墙体层3及透光胶体层5的总高度需大于芯片及打线的总高度，以避免金线暴露在LED封装体外。
同时参阅图2及图13，本发明LED封装体制造方法的第四较佳实施例，与第一较佳实施例大致相同，其差异在于，在基板1形成导电线路层2及垫高层24的步骤S2后，还包含步骤S21，在导电线路层2及垫高层24表面镀上高反射层242，如镍、银等。更可有利于反射LED晶粒41光线。补充说明的是，该步骤S21可配合前述各实施状态共同实施，均能有利于各实施状态中的光线反射。
综上所述，通过网印方式在基板1上形成高反射的墙体层3，固晶后只需一次模制成型，减少切割次数及刀具损耗，改善先前技术因切割毛边所造成透光胶体层5与墙体层3介面的接着、剥离问题，有效防止水汽入侵，成为气密性佳的高性赖度产品，故确实能达成本发明的目的。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明,任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (10)

1.一种LED封装体制造方法，包含以下步骤：在基板上形成导电线路层；其特征在于还包含：
以网印方式在该导电线路层形成不透明的墙体层，且该墙体层呈格状而形成多个围墙单元，使每一个围墙单元围绕区域内的该导电线路层露出；
在每一个围墙单元内的导电线路层上固定并电连接至少一个LED晶粒；
以模制成型方式形成透光胶体层，且该透光胶体层覆盖设置于导电线路层上的所述LED晶粒；及
对应每一个围墙单元裁切形成多个LED封装体。
2.如权利要求1所述LED封装体制造方法，其特征在于在该导电线路层上预定形成该墙体层的区域先形成垫高层，再将该墙体层形成于该垫高层上，该垫高层及该墙体层的整体高度大于所述LED晶粒的高度。
3.如权利要求2所述LED封装体制造方法，其特征在于该导电线路层与该垫高层为相同材质，且该垫高层与该导电线路层的表面还被覆有高反射层。
4.如权利要求1所述LED封装体制造方法，其特征在于每一个围墙单元具有外围墙及分隔墙，以将所围绕的导电线路层界定出固晶区及附属元件区；该LED晶粒固定于该固晶区，且该步骤在每一附属元件区还固定并电连接齐纳二极管。
5.如权利要求1所述LED封装体制造方法，其特征在于该墙体层的材料是选自高反射的白色硅胶或油墨。
6.一种LED封装体，包含：板部及导电线路层，该导电线路层形成于该板部上；其特征在于还包含：
围墙单元，以网印方式形成于该导电线路层上，且将所围绕区域内的该导电线路层露出；
至少一个LED晶粒，固定于该围墙单元内并电连接于该导电线路层；及
透光胶体层，以模制成型方式形成，覆盖设置于该导电线路层上的LED晶粒。
7.如权利要求6所述LED封装体，其特征在于该围墙单元具有外围墙及分隔墙，并将该导电线路层界定出固晶区及附属元件区；该LED晶粒固定并电连接于该固晶区；该LED封装体还包含固定并电连接于该附属元件区的齐纳二极管。
8.如权利要求6或7所述LED封装体，其特征在于还包括形成于该导电线路层与该围墙单元间的垫高层，且该垫高层及该围墙单元的整体高度大于该LED晶粒的高度。
9.如权利要求8所述LED封装体，其特征在于该垫高层与该导电线路层由相同材质制成，且该垫高层与该导电线路层的表面被覆有高反射层。
10.如权利要求6所述LED封装体，其特征在于该围墙单元的材料是选自高反射的白色硅胶或油墨。
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