CN104062574B - The manufacturing method of the inspection method of semiconductor device and the semiconductor device of use this method - Google Patents
The manufacturing method of the inspection method of semiconductor device and the semiconductor device of use this method Download PDFInfo
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Abstract
In the inspection method of the semiconductor device of the present invention, contact resistance between the terminal lead and probe of the measured in advance semiconductor device identical with check object type, for being more than the semiconductor device for the contact resistance value for being considered as the general value that will not be judged by accident in electrical characteristics experiment with contact resistance value, in advance using in order to the contact resistance value for making this larger drops to general value and required electric energy is obtained as a reference value, utilize the method identical with measuring the contact resistance, measure the contact resistance of the semiconductor device as check object, the contact resistance value is being shown as more than in the case of the general value, after the electric energy as a reference value is applied, contact resistance is measured again, confirm that contact resistance becomes general value and carries out required electrical characteristics experiment.
Description
Technical field
The present invention relates to be effectively performed stablize and the inspection method of the semiconductor device of electrical characteristics with high accuracy experiment, with
And the manufacturing method of the semiconductor device using this method.
Background technology
Usually before it will manufacture the semiconductor device shipment completed, electrical characteristics experiment, the experiment for confirming face shaping
Inspection operation is essential.For example, in electrical characteristics experiment, in the probe for making to be connected with testing machine (detector) and half
In a state that the terminal lead of conductor device is in contact, apply predetermined assigned voltage, electric current, measure voltage at this time
The value of electric current or the value are compareed with the variation of time, and with defined voltage and current a reference value, to judge qualification
It is or unqualified.
However, in the experiment of semiconductor device, particularly the power supply control semiconductor devices such as IC checks, electrical characteristics examination
The voltage that is applied when testing, electric current usually the three ten-day period of hot season it is special or several milliamperes hereinafter, and minute also usually below millisecond.Short
It must carry out high-precision measure in time to so small voltage and current, but known there are following situations：That is, surveying
Periodically, can be led to not by the influences such as contact resistance because of caused by oxidation film in terminal lead surface self-assembling formation etc.
Correct measurement result is obtained, qualified products are mistaken for substandard product etc., so that the stability measured in electrical characteristics inspection
It leads to the problem of.
Therefore, in the inspection operation of semiconductor device, in order to carry out high-precision electrical characteristics experiment with stable state,
Oxidation film that the contact resistance on the terminal lead surface for making to be formed in semiconductor device becomes larger etc. must be removed to reduce contact
Then resistance is tested probe contact.In order to remove the oxidation film, it is known that following inspection method：Using cut, wipe,
Scrape, the mechanical method such as needle thorn removes the oxidation film of part, be in direct contact probe and basal layer metal special to carry out electricity
Property experiment.
About above-mentioned existing inspection method, slightly it is described in detail below.Semiconductor as inspected object
Device carries out solder engagement in the position of its terminal lead to be carried and installed in the electrical apparatus mostly.Therefore, in its table
Face is applied with the solder coating being made of Sn or SnAg alloys.However, on the surface of such solder coating, due to in air
Oxygen react and would generally form that thickness is minimum and high-resistance oxidation film.About oxidation film as formation, not only
With surface as described above by the semiconductor device of the terminal lead of solder plating, and with by the end of nickel plating
In the semiconductor device of sub- wire surface or aluminium alloy terminal etc., though film quality, film thickness how much have differences, can all be formed
Oxidation film.About all semiconductor devices with the terminal lead for being formed with such oxidation film, although being unlikely to make electric spy
Property experiment become unstable, but will appear the semiconductor device that (several % or so) are misjudged in certain proportion.
For above-mentioned semiconductor device, previous check device and inspection method are carried out with reference to Fig. 3, Fig. 8, Fig. 9 detailed
Explanation.First, (the Small Outline Package of the SOP shown in the enlarged cross-sectional view in Fig. 3：Small outline packages) 8 pins
With on socket, semiconductor device 20 (such as shape of SOP8 pins) is carried using handling device (not shown).The SOP8 is managed
Foot socket 30 is the Special electric attribute testing fixture for having upper-lower casing 3,4, which, which has, fills semiconductor
It puts 20 main part and the terminal lead 21 of 8 pins is fixed and is accommodated in saddle and the space of specified position.Moreover, in closing
During lower housing 3,4, the terminal lead 21 being made of 8 pins is respectively provided with primary probe 1 and assist probes 2, which is set to
Lower housing 4 and from below with 4 Elastic Contact of lower housing, which is set to upper shell 3 and from top and the upper shell
3 Elastic Contacts.In these upper shells 3 and lower housing 4 in the state of upper and lower directions opening, on the regulation saddle of lower housing 4,
It is provided with the semiconductor device 20 (such as SOP8 pins) for carrying out electrical characteristics experiment.Then, if be closed socket upper-lower casing 3,
4, then primary probe 1 and assist probes 2 carry out Elastic Contact from the terminal lead 21 of upper and lower directions and semiconductor device.In order to confirm
Initial contact condition (size of the contact resistance of probe and terminal lead) switches relay 35 as shown in figure 9, temporarily utilizing
The reponse system sensing terminals 33 of circuit (electrical wiring) from the testing machine (detector) of assist probes 2 are switched to power ground end
Son 34.The Weak current of 1~10mA or so is flowed through from power supply application terminal 32.The value of voltage or resistance when confirming thus measures
(such as 0.1 Ω ＜ Rcon ＜, 1 Ω) (is determined as obtained contact resistance Rcon in the E1 steps of Fig. 8 within the limits prescribed
“YES”).Then, reuse switching relay 35 and switch the path of 2 side of assist probes, be restored to assist probes 2 with it is anti-
The state that feedback system sensing terminals 33 are connected.In E2 steps, according to required electrical characteristics pilot project, to being walked in the E1
The semiconductor device that " YES " is judged as in rapid applies voltage, electric current, measures voltage value/current value or the signal at this time
It is qualified/unqualified to judge by being compared with defined a reference value with the variation of time.Confirm in the E1 steps
During above-mentioned initial contact resistance Rcon, it is determined due to contact resistance big (being, for example, 1 more than Ω) and bad contact condition
For " NO ", in the case, it is distinguished as contact substandard product without the experiment of defined electrical characteristics and is discharged.Mostly
In the case of, if the contact substandard product is not considered the exception for having in the shapes such as deformation, the bending of terminal lead, with
The mode of range estimation is observed, and the foreign matter that the adhering on surface of terminal lead is removed or prunes significant oxidation film, in this base
On plinth, if (" YES ") can be tested again in E3 steps, E1 steps are returned to, are again carried out electrical characteristics experiment.
If being " NO " in E3 steps, substandard product (" substandard product processing ") is divided into, and excluded.Reponse system sense
It surveys terminal, power ground terminal and waits a moment the power supply of narration to apply terminal be end that common electronic circuit testing machine has
The title of son.
In above-mentioned E1 steps, about contact resistance Rcon, using 0.1 Ω ＜ Rcon ＜, 1 Ω as benchmark to contacting shape
Whether qualification is judged that (" YES " judge and " NO " judgement) is an example to state, can with oxidation film film quality, film
The difference of thickness, determination of the environment temperature etc. and change.
As the method for reducing different contact resistance, it is known to be formed in terminal lead metal epithelial surfaces and
The oxidation film of thinner thickness applies voltage and current, to reduce method of contact resistance etc..
About the experiment inspection method of such semiconductor device, had been described efficiently implement electrical characteristics experiment and
Significantly increase the inspection method (patent document 1) of the handling capacity of detection.Following inspection method is also described, is checked by removing
With the insulating coating of electrode surface so that check probe and inspection electrode realize good electrical contact, thus reduce needle pressure,
It eliminates to the damage caused by electrode, without being cleaned to probe, so as to improve detection efficiency (patent document 2).
Existing technical literature
Patent document
Patent document 1：Japanese Patent Laid-Open 2004-191208 bulletins (the 0006th~0007 section)
Patent document 2：Japanese Patent Laid-Open 2002-139542 bulletins（0008th~0011 section）
Invention content
The technical problems to be solved by the invention
However, as described above, remove the oxidation film on terminal lead surface using the mechanical processing method such as pruning
All methods all can damage or be likely to result in new bad order to the terminal lead of semiconductor device.Because to big
The semiconductor device of amount carries out electrical characteristics experiment, so during probe is repeatedly repeatedly made to be in contact with terminal lead,
If since oxidation film is attached to the abrasion of probe front or probe front so that cause due to preceding end in contact to the oxidation
The destruction of film is not enough, then probe front must be cleaned or probe is replaced.And in determination of the environment temperature
In hot environment more than 100 DEG C, it can promote to aoxidize, so as to form thicker oxidation film on the surface of probe or terminal lead,
And it is easier to that the oxidation film pruned from terminal lead is made to be attached on probe.Therefore so that contact of the probe with terminal lead
Become unstable, the occurrence frequency of loose contact may be increased.Become as a result, probe necessary to occurring cleans interval
The problem of short or probe exchange frequency increase.In addition, it can lead to the problem of as follows：If the occurrence frequency of loose contact increases
So that the generation quantity of substandard product increases, then loose contact product as described above, due to carrying out reduction contact
The processing of resistance value and then secondary progress electrical characteristics experiment, so that the number of electrical characteristics experiment increases, reduce experiment effect
Rate.
In above-mentioned patent document 1,2, mainly using the experiment of chip as object, other than common primary probe, also
Need the application specific probe for reducing contact condition.Moreover, in the case where being determined as that contact resistance is larger, in order to reduce contact
Resistance needs to carry out following process：While power source special is used to apply voltage between primary probe and application specific probe, to electricity
Stream is measured, and during voltage is made to increase, resistance drastically declines, and is confirmed whether to flow out electric current.The process is being utilized, really
The situation that resistance of accepting drastically declines, and confirmed to remove oxidation film to reduce contact resistance, the feelings so as to improve energized state
After condition, need to carry out following process：Power supply is switched to original electric source for test purposes, electrical characteristics as defined in progress are tested.On
Stating process needs complicated step and control, can not realize efficient the test procedure.
The present invention in view of the above description the problem of and design to obtain.The purpose of the present invention is to provide following partly to lead
The inspection method of body device：It reduces and frequency and replacement frequency is cleaned because of caused by the surface oxidation of probe, reduce loose contact
The test frequency again of product, can improve test efficiency, so as to steadily carry out high-precision electrical characteristics experiment.
Technical scheme applied to solve the technical problem
In the inspection method of the semiconductor device of claim 1, using primary probe and assist probes to multiple letters
The electrical characteristics of the semiconductor device of number terminal are measured, and the primary probe is used for when carrying out the measure to the semiconductor
Device applies voltage and current, and the assist probes are for the voltage when carrying out the measure to being applied to the semiconductor device
Electric current is measured, which is characterized in that including：The first step in the first step, makes the primary probe and the auxiliary
Probe is in contact with a signal terminal of the semiconductor device, and to a signal terminal and the primary probe
And the contact resistance between the assist probes is measured, and will measure the obtained contact resistance and first reference value threshold value phase
Compare, when measuring the obtained contact resistance when within the first reference value threshold value, proceed to the second step, work as measure
The obtained contact resistance when within the first reference value threshold value, does not proceed to the third step；The second step, described
In the second step, the electrical characteristics of the semiconductor device are measured；The third step, in the third step, to one
Contact resistance between the signal terminal and the primary probe and the assist probes is measured, by measure obtain this connect
Resistance get an electric shock compared with the second a reference value threshold value, when the contact resistance measured in the third step is in second benchmark
When being worth within threshold value, the fourth step is proceeded to；The fourth step in the fourth step, is surveyed according in the first step
Surely the contact resistance obtained determines the benchmark applied via the primary probe and the assist probes to a signal terminal
Electric energy proceeds to the 5th process；5th process, will via the primary probe and the assist probes in the 5th process
The benchmark electric energy determined by the fourth step is supplied to a signal terminal；And the 6th process, the described 6th
In process, the contact resistance between a signal terminal and the primary probe and the assist probes is measured, will
The obtained contact resistance is measured compared with first reference value threshold value, when the contact resistance that measure obtains is described first
When within a reference value threshold value, the second step is proceeded to.
In the inspection method of the semiconductor device of claim 2, on the basis of the invention of the claims 1, institute
First reference value threshold value is stated as 0.1 Ω ＜ Rcon ＜, 1 Ω, the second a reference value threshold value is 1 Ω≤10 Ω of Rcon ＜.
In the inspection method of the semiconductor device of claim 3, the electric energy is 0.01 watt-second to 0.05 watt
The special second.
In the inspection method of the semiconductor device of claim 4, the electric energy is time of the power with applying the power
Product, apply the time of the power in the range of 1ms to 10ms.
In the inspection method of the semiconductor device of claim 5, the environment temperature of the electrical characteristics experiment is to be up to
150 DEG C of high-temperature atmosphere has and easily forms oxidation film on the surface of the terminal lead of semiconductor device under the high-temperature atmosphere
Metal material.
In the inspection method of the semiconductor device of claim 6, in the 5th process, about being applied to an institute
The benchmark electric energy of signal terminal is stated, by making its electric current definite value and to adjust its application time, thus meets a reference value
Electric energy to realize the reduction of contact resistance.
In the inspection method of the semiconductor device of claim 7, in the 5th process, about being applied to an institute
The benchmark electric energy of signal terminal is stated, by making its application time definite value and to adjust its current value, thus meets the benchmark
The electric energy of value is to realize the reduction of contact resistance.
In the inspection method of the semiconductor device of claim 8, in the check device of the semiconductor device, master is used
Probe and assist probes are measured the electrical characteristics of the semiconductor device with multiple signal terminals, and the primary probe is used for
Apply voltage and current to the semiconductor device when carrying out the measure, the assist probes are used for when carrying out the measure pair
The voltage and current for being applied to the semiconductor device is measured, using making the primary probe and the assist probes and described half
One signal terminal of conductor device is in contact and can be to a signal terminal and the primary probe and described auxiliary
The device that the contact resistance helped between probe is measured, according to point for multiple contact resistance values that measured in advance obtains
Cloth using the higher contact resistance value of the frequency of occurrences as target, reduces the contact resistance value to be obtained and meets 0.1 Ω ＜
The electric energy of 1 Ω of Rcon ＜ makes the electric energy corresponding with the benchmark electric energy.
In the manufacturing method of the semiconductor device of claim 9, the detection method of above-mentioned semiconductor device is used.
Invention effect
The inspection method of following semiconductor device is capable of providing according to the present invention, reduces and draws due to the surface oxidation of probe
The cleaning frequency and replacement frequency risen reduces the test frequency again of loose contact product, can improve test efficiency, so as to
It is enough steadily to carry out high-precision electrical characteristics experiment.
Description of the drawings
Fig. 1 is the step process chart for illustrating the inspection method of the semiconductor device of the present invention.
Fig. 2 is for illustrating the testing machine (detector) of the inspection method of the semiconductor device of the present invention, probe and partly leading
The brief diagram of electrical connection wiring between the terminal lead of body device.
Fig. 3 is the state being installed to semiconductor device in the electrical characteristics experiment socket of semiconductor device (SOP8 pins)
Enlarged cross-sectional view.
Fig. 4 is contact resistance and the load of the probe (contact probe) of electrical characteristics experiment socket according to the present invention
Between relational graph.
Fig. 5 is met between the application time for the electric energy for reducing contact resistance according to the present invention and application electric current
Relational graph.
Fig. 6 is before and after contact resistance according to the present invention reduces processing, electricity is contacted under 150 DEG C of determination of the environment
Hinder the comparison figure of distribution.
Fig. 7 is an example of the contact resistance distribution map of the terminal lead of semiconductor device according to the present invention.
Fig. 8 is the step process chart for illustrating the inspection method of existing semiconductor device.
Fig. 9 is for illustrating the testing machine of the inspection method of existing semiconductor device (detector), probe and semiconductor
The brief diagram of electrical connection wiring between the terminal lead of device.
Specific embodiment
In the following, the embodiment involved by the inspection method of the semiconductor device of the present invention is carried out specifically with reference to attached drawing
It is bright.In addition, in the explanation of following embodiments and attached drawing, identical symbol is marked to identical structure, and omit repeated explanation.
In addition, without departing from the purport of the present invention, the present invention is not limited in the content recorded in embodiment described below.
Before the inspection method of semiconductor device of the present invention is illustrated, first to as shown in Figure 2 by testing machine (detection
Device) and the electrical connection wiring that connects of terminal lead of semiconductor device it is briefly shown in figure, as check object half
The semiconductor device 20 of one exemplary SOP8 pin of conductor device illustrates.The semiconductor device 20, which has, passes through solder
Thickener is joined to patch-type semiconductor components and devices in the die pad portion (metal substrate) of copper alloy (below as semiconductor core
Piece).Detaching and remained electrically isolated from the position of state with the die pad portion, the right and left be bonded to respectively each 4, amount to
One end of 8 metal terminal leads 21.The surface of semiconductor chip on the terminal lead 21 and the die pad portion
Between electrode, utilize and be connected to be electrically connected with Al conducting wires as main component.Moreover, with by the semiconductor chip,
The semiconductor device of the package assemblies of compositions such as die pad portion, conducting wire and terminal lead 21 sees have on the whole：In order to
External connection and make terminal lead 21 (8) other terminals respectively drawn from side respectively 4 in the case of external shape,
The structure obtained from the mould-forming of epoxy resin is sealed.The terminal lead 21 is being installed to circuit device
When, it is contemplated that it is installed using the combination of solder engagement, is covered using for the preferable metal film plating of solder wettability.
When being determined in testing inspection operation to the electrical characteristics of semiconductor device 20, using having the following structure
Socket 30：As shown in Fig. 2, one end of wiring is connected to the testing machine 31 being made of circuit device of measure electrical characteristics etc.
(detector), and the other end of wiring is connected to the shape phase different from each specific semiconductor device as shown in Figure 3
The probe in identical dedicated saddle portion.The socket 30 has probe (primary probe 1, assist probes 2), the probe as shown in Figure 3
For being in contact with the external terminal lead 21 of the semiconductor device 20 on the saddle being made of above-mentioned housing 3,4, with
Carry out electric test.The private jack 30 has for the saddle of the semiconductor device in socket, with appropriate pressure and examination
The structure of the probe Elastic Contact of machine side is tested, wherein, the probe of the testing machine side from semiconductor device to outside with drawing
Terminal lead be in contact.Such private jack has primary probe 1, assist probes 2, and the primary probe 1, assist probes 2 are for example
It is the probe either contact probe of cantilevered fashion, the probe of cantilevered fashion is partly leading on the specified position of saddle is accommodated in
On multiple (such as 8) terminal leads 21 of body device 20, to be carried out from the upper and lower directions of terminal lead 21 with appropriate pressure
The cantilevered cantilevered fashion probe that the mode of Elastic Contact is assembled, contact probe is in the specified position for being accommodated in saddle
On semiconductor device 20 multiple terminal leads 21 on, the contact that is contacted in a manner of moving in vertical direction is visited
Head.That is, the probe of these cantilevered fashions, the primary probe 1 of contact probe and 2 respective one end of assist probes are respectively at half
The terminal lead 21 of conductor device is in contact, and the other end is connected with electrical characteristics testing machine.In the presence of with a terminal lead 21
The probe being in contact is the situation of one, and also the enlarged cross-sectional view just like the socket 30 shown in Fig. 3 popped one's head in using contact is such,
Make to be in contact to carry out institute with a terminal lead 21 by a pair of of probe that primary probe 1 and assist probes 2 form in most cases
The situation that the electrical characteristics experiment needed measures.
Specifically, primary probe 1 is assembled into the lower housing 4 of socket 30, assist probes 2 are assembled into the upper shell of the socket
In 3.By the way that upper shell 3 and lower housing 4 is made to move up and down respectively, so as to make the socket 30 in opened condition or closed form
State.Moreover, the socket 30 passes in and out semiconductor device 20 when in opened condition, when the socket 30 is in closed state, make master
One end of probe 1 and one end of assist probes 2 connect from upper and lower both direction with the terminal lead of semiconductor device 20 21 respectively
It touches, and utilizes the (detection of motor characteristic testing machine 31 being connected with the other end of primary probe 1 and the other end of assist probes 2
Device) measure electrical characteristics.The shape of the various semiconductor devices different from size and terminal lead quantity matches, and has prepared shape
The different various sockets of shape, these sockets have the primary probe and assist probes for being configured to different number.Apply institute to primary probe 1
The voltage and current needed, assist probes 2 are used for being applied to the voltage of primary probe 1, electric current is measured so that it maintains to stablize.
[embodiment 1]
Invention involved by claim 1 to the claim 4 of the inspection method of semiconductor device as the present invention
Embodiment, with reference to Fig. 1 to typically detecting process the step of, illustrate.First, using Fig. 2, Fig. 3, to partly leading for the present invention
The brief configuration of fixture and electrical wiring needed for the inspection method of body device illustrates.In the following description, for half
Conductor device 20, to be referred to as SOP (Small Out line Package：Small-sized package) encapsulation shape be representative carry out
Citing, but be not necessarily such shape, it can be applied to variously-shaped semiconductor device.Provided of course that change half
The shape of conductor device is it is necessary to changing the shape of socket to be measured.
Using the handling device (not shown) for being for example referred to as executor, it is transported to as the semiconductor device 20 of object
The private jack 30 of semiconductor device 20 shown in Fig. 3, and it is accommodated in the defined measure of the private jack 30 of opening-like state
Position.Fig. 3 represents semiconductor device 20 being accommodated in private jack and in the mian part amplification profile for the state for closing upper-lower casing
Figure.Upper shell 3, the assist probes 2, the lower housing that are assembled in the upper shell 3 are provided in the said determination position of private jack 30
4 and it is assembled in the primary probe 1 of the lower housing 4.When the upper shell 3 of private jack 30 and lower housing 4 are closed, Ge Gezhu
Probe 1 and assist probes 2 are clamped respectively from upper and lower directions to be placed in the multiple terminals of semiconductor device 20 to locate and draws
Line 21, and Elastic Contact is carried out with appropriate load respectively.In addition, setting positioning slot or protrusion, so that steadily will be partly
Conductor device is mounted on upper shell 3 and lower housing 4.In fig. 3 it is shown that using being configured in a manner of opposing upper and lower
Primary probe 1 and assist probes 2 clamp the terminal lead 21 of semiconductor device to carry out the state of Elastic Contact.
In primary probe 1 and assist probes 2 shown in Fig. 3, in order to multiple sharp front ends and with good electricity
Contact, using surface carried out Au platings, be referred to as contact probe structure.The front end of contact probe by spring press,
According to its front end is pressed and the length (shrinkage) shunk generates load, front end is pressed on terminal lead 21 with the load
Surface.As shown in Figure 4, the knot obtained after the relationship between the practical load for measuring contact resistance and contact probe
The shrinkage for generating the load is set to the following length by fruit, so that contact load is about 0.1~0.3N and can be steadily
Obtain good contact resistance (0.1 Ω or so).About the contact load, if such as being set as the central contact load of target
For 0.2N, even if the pressurization deviation then with contact probe, contact load can be also limited to the range of general 0.1~0.3N
It is interior.Then, in step shown in Fig. 1, electrical characteristics the test procedure is proceeded to.
If starting electrical characteristics the test procedure, F1 steps are first carried out.In F1 steps, to being installed on above-mentioned private jack
The terminal lead 21 of semiconductor device 20 in 30 and the primary probe 1 that terminal is connected with testing machine (detector) and auxiliary are visited
Contact condition between needle 2 confirmed, i.e., to whether there is oxidation film on surface because being formed in terminal lead 21 etc. due tos draw
The contact resistance risen is confirmed.For this purpose, for the connecting line between probe shown in Fig. 2 and testing machine 31 (detector), make
Switching relay 35 works, and the wiring from assist probes 2 is made to be detached, and make with 33 path of reponse system sensing terminals of script
It is connected with power ground 34.At the same time, make the routing path from power supply application terminal 32 to primary probe 1 since halfway
Branch similarly using relay 35 is switched, makes with reponse system sensing terminals 33 to be connected from the path of primary probe 1.
As shown in above-mentioned example, used contact probe (primary probe 1, assist probes 2) and not because of oxidation film etc.
And in the ideal contact of the contact resistance generated, as shown in Figure 4 above as, if the contact load on a contact position
For 0.2N, then Ω of 0.12 Ω~0.15 or so is shown as resistance value (contact resistance value).It is used in embodiment to insert
In seat 30, become with assist probes 2 contact on 2 positions due to primary probe 1, in the shape without oxidation film envisioned
Make Ω of 0.24 Ω that contact resistance becomes 2 times~0.30 or so under state.Herein, there are other contact points to include such as probe side
Contact resistance etc. and the situation for becoming 0.5 Ω or so, but seldom can be more than 1 Ω even if big again.In order to make terminal as far as possible
Contact resistance other than lead is not used as probe as problem, it is preferable to use becoming not oxidizable surface after Au platings etc.
Surface.
Then, apply certain Weak current of 1mA to 10mA or so by power supply application terminal 32, terminal is applied according to power supply
The contact between primary probe 1, assist probes 2 and terminal lead 21 is obtained in generated potential difference between 32 and ground terminal 34
Resistance.In this example, current value is set as to the constant current of 10mA, in this state, measure primary probe and assist probes it
Between generated voltage contact resistance Rcon is obtained.
At this point, according to the Fig. 1 for representing test procedure, when contact resistance Rcon meets common contact electricity in F1 steps
Resistance, i.e. 0.1 Ω<Rcon<During 1 Ω (the first baseline threshold) (situation of "Yes" in F1 steps), the common of F2 steps is proceeded to
Electrical characteristics test procedure carries out terminating to test after the electrical characteristics experiment of semiconductor device.When contact resistance Rcon is in F1 steps
In be unsatisfactory for 0.1 Ω<Rcon<During 1 Ω (situation of "No" in F1 steps), F3 steps are next proceeded to.It is in F1 steps above
The processing of middle progress.In F3 steps in the case where above-mentioned contact resistance Rcon is in 0.1 below Ω ("No" in F3 steps
Situation), since terminal lead 21 may be when envisioning the reasons why outer in short circuit or abnormal low resistance state, advance
To the loose contact processing step of F7.Moreover, even if contact resistance Rcon is (F3 is walked in the case of 10 more than Ω in F3 steps
The situation of "No" in rapid), lead terminal 21 may insulate or in abnormal high resistance when not in contact with or because foreign matter
State, thus it is identical with the above situation, advance to the loose contact processing step of F7.When contact resistance meets in F3 steps
During 1 Ω≤10 Ω of Rcon10 ＜ (the second baseline threshold) (situation of "Yes" in F3 steps), it is contemplated that contact resistance may be because
The delicate influence such as the oxidation film on 21 surface of terminal lead and become larger, therefore in order to attempt improve contact condition (reduce contact electricity
Resistance), advance to F4 steps.
F4 steps be to determine the condition reduced to contact resistance and advanced to after F5 steps the step of.At it
In F5 steps afterwards, contact resistance and external terminal lead 21 and auxiliary between external terminal lead 21 and primary probe 1
Contact resistance between probe 2 carries out reduction processing.The processing reduced in this way to contact resistance is as shown in figure 3, utilizing
In a state that primary probe 1 and assist probes 2 clamp the terminal lead 21 of semiconductor device to carry out Elastic Contact, by main spy
Electric current is flowed through between needle 1 and assist probes 2, so as to be visited in the contact portion of primary probe 1 and external terminal lead 21 and auxiliary
The contact portion of needle 2 and external terminal lead 21, electric energy as defined in application.By electric energy as application, can reduce to be formed
In 21 surface of external terminal lead oxidation film to probe (primary probe 1 and assist probes 2) between external terminal lead 21
It is influenced caused by contact resistance, probe (primary probe 1 and assist probes 2) connecing between external terminal lead 21 can be reduced
It gets an electric shock and hinders.Therefore, in F4 steps, according to the contact resistance value measured in F1 steps and be obtained in advance, for reducing
Electric energy needed for the contact resistance, come the time for determining the electric current applied to produce electricl energy and applying.
Herein, the validation test for being used to determine to attempt to the condition for improving the contact condition in F4 steps is illustrated.
That is Fig. 5 shows a following example, SnAg Alloy Platings are carried out to the surface of the terminal lead 21 of semiconductor device 20
It applies, above-mentioned validation test is carried out under conditions of popping one's head in probe using contact.It is understood in the validation test：What is limited
In the range of application time, by applying the electric current for the electric energy for meeting certain grade, so as to improve contact resistance.Below to the confirmation
Experiment is described in detail.
Structure is as follows：On above-mentioned illustrated semiconductor device (SOP8 pins), the contact that is manufactured using company of Ricoh
Probe is contacted, and the front end geometry of contact probe is crown shape, and implemented Au platings to it, and a diameter of
0.26mm and 0.31mm, in addition, determination of the environment is set as 18~25 DEG C of room temperature, contact resistance is obtained in contact load 0.2N
When current value be 0.1mA.
Electric current I, contact resistance Rcon, application time t, the relationship formula described as follows (1) of electric energy Wt are shown.Use is obtained
In an example of the size for the electric energy Wt for improving contact resistance, in the range of calculated electric energy Wt is met, for
Relationship between the fixed electric current of voltage and application time, is shown in FIG. 5 measured value and the analogue value.It surveys
Value (△ labels) and the result of the numerical computation (× label) based on formula (1) are substantially consistent.In Figure 5, may be used
Know：Make application electric current in the range of 1.0A to 4.0A, actual measurement is improved to contact resistance Rcon.If by the application electric current
Range is set as application time, then corresponds respectively to 10ms to 1ms.
If setting electric energy=Power x time=Wt, contact resistance Rcon, electric current I, application time t then meet
Following mathematical expressions.
<Mathematical expression>
Wt=Rcon × I2× t（1）
I=√（Wt/（Rcon × t））···（2）
T=（Wt/（Rcon × I2））···（3）
In the Fig. 5 for representing the validation test structure, the range for the application time t which sets up is shorter, examination
It is shorter to test the time it takes, efficiency is higher, therefore even if in the range of the application time t of 1ms to 10ms, preferably short as possible
Application time.Moreover, in the range of the application time, from calculated electric current, selection meet to contact resistance Rcon into
The electric current of the condition for the electric energy Wt that row improves, but no more than the maximum permissible current determined by testing machine (detector)
In the range of capacity, the electric current is determined.
Improve the size of the electric energy of contact resistance probably more than 0.01 watt-second, actually preferably at 0.01 watt
Second in the range of 0.05 watt-second or so.Such as 0.01 watt is being sized to by improve the electric energy of the contact resistance
In the case of second, when contact resistance is 1 Ω, the constant current of 1A can be obtained in the case where application time is 10ms.If
For the electric energy of above range, then can or for example electric current be flowed through as constant voltage even if constant current is not provided and carried
For the mode of defined electric energy.
After trying hard to improve contact resistance in F5 steps, F6 steps are advanced to.In F6 steps, applied again from power supply
Terminal 32 is added to apply defined Weak current, measures the voltage generated between power supply applies terminal and is grounded by primary probe 1,
Contact resistance is obtained according to electric current and voltage value again.In this embodiment, if the contact resistance is reduced to 0.1 Ω ＜ Rcon
In the range of 1 Ω of ＜, then switching relay 35 is made to work, it will be between primary probe 1, assist probes 2 and testing machine (detector) 31
Routing path restore to the original state, become primary probe 1 and power supply and apply terminal 32 and be connected and assist probes 2 and reponse system sense
The state that terminal 33 is connected is surveyed, carries out required electrical characteristics experiment.If contact resistance is unsatisfactory for 0.1 Ω ＜ Rcon ＜ at this time
The condition of 1 Ω then advances to F7 steps, is handled as loose contact product.
In the case of the condition for being unsatisfactory for 0.1 Ω ＜ Rcon ＜, 1 Ω in contact resistance in F6 steps, and non-immediate work
It is handled for loose contact product, also may proceed to F3 steps or F4 steps, repeatedly carry out the processing of F4 steps and F5 steps.
In the case, as long as setting following steps：That is, the pre-determined number for carrying out F5 steps, in a series of process,
The number of accumulative processing F5 steps, it is preceding in the case of can not improving contact resistance even if the processing for carrying out stipulated number
Proceed to end process.
Then, the embodiment involved by claim 5 is illustrated.Contact condition is changed about using this method
It is kind, have such effect certainly even if at room temperature, but be especially in room temperature or more than room temperature in determination of the environment
Effect is preferable in the state of 150 DEG C.It was found from empirically considering：Under high temperature environment, terminal lead surface is because occurring oxygen
Change or the oxidation film of stripping is attached to the contacted first-class influence of contact detecting head surface, be easy to that contact resistance is caused to increase, tie
Fruit is, due to the influence cause to measure the situation for becoming unstable it is more.This be such as terminal lead surface be SnPb alloys,
Sn, SnAg alloy, SnAgCu alloys etc., under high temperature environment the surface metal material that easily there is a situation where aoxidize.Therefore, it incite somebody to action this
The measure that the inspection method of the semiconductor device of invention is applied under hot environment is especially effective.Under normal circumstances, it is by temperature
100~150 DEG C are envisioned for hot environment, and the present invention is particular enable to play effect in this case.
Fig. 6 is the distribution map of contact resistance, is shown in the distribution map of the contact resistance at 150 DEG C of hot environment,
Improved contact resistance before and after the processing to contact condition using the embodiment of the inspection method of the semiconductor device of the present invention
Variation (reduction) an example.It shows after the improvement processing of contact condition according to the present invention, from initial
The contact resistance distribution of 1000m Ω~1500m Ω probably improves the situation for 400m Ω~900m Ω.
Then, the embodiment involved by claim 6 is illustrated.As is noted above, it is connect to improve
The required electric energy of electric shock resistance and the relationship for meeting formula (1) between electric current, time.Formula is obtained after being deformed to the formula
(3).In the improvement processing of above-mentioned contact resistance, the electric current applied is set as by certain value according to the formula (3), according to being surveyed
Fixed contact resistance Rcon is increased and decreased application time adjustment, so that the electric energy needed for applying.It can be no more than installation
In the range of the fan-out capability of testing machine 31 (detector) and the power supply used, the electric current applied is suitably determined.
Then, the embodiment of the invention involved by claim 7 is illustrated.As is noted above, in order to
Improve the electric energy needed for contact resistance and meet the relationship of formula (1) between electric current, time.It is obtained after being deformed to the formula
Formula (2).Therefore, the time of application is set as definite value, is increased and decreased according to the contact resistance Rcon measured to applying electric current
Adjustment, so that the electric energy needed for applying.It is not limited in being increased and decreased application time or increases to applying electric current
Subtract, can suitably be carried out according to the characteristic specifications of the semiconductor device of the structure or check object of testing machine 31 (detector)
Selection.
Then, the embodiment of the invention involved by claim 8 is illustrated.Fig. 7 shows in semiconductor device and connects
The actual measurement distribution map of electric shock resistance value.According to Fig. 7, contact resistance is distributed in from the state of 1 Ω is slightly exceeded to the almost shape of 2 Ω
Between state, specifically illustrate contact resistance trend be scattered in it is more slightly larger than the resistance value of 1 Ω and close to the resistance value of 2 Ω
It is considerably less.Therefore, in the case of the distribution of the contact resistance, if trying hard to carry out contact resistance according to the distribution
Improve, then can more effectively improve contact condition.Therefore, the highest contact resistance value of frequency will be predicted to be according to Fig. 7 to make
On the basis of be worth, application condition is determined according to the fixed current of regulation and set time so that in order to reduce contact resistance and
The electric energy of application becomes required value.If thus determining application condition, simplify to reduce contact resistance and required application
The decision process of condition, by simplifying processing, even if not carrying out calculation processing using testing machine (detector) every time,
It can try hard to improve contact resistance.The actual measurement distribution of contact resistance value according to figure 7, to be obtained to reduce embodiment 1
Described in contact resistance and the electric energy that applies, using contact resistance be about the situation of 800m Ω to 2000m Ω as target come into
Row setting, so as to try hard to reduce contact resistance value.The present invention is not limited in the embodiment included, structure construction, can
Appropriate change is carried out to structure construction, each numerical value in the content of purport of the present invention is met.
Then, the invention involved by claim 9 is using the claims 1 to the inspection involved by claim 8
Method manufactures semiconductor device.By manufacturing semiconductor device as described above, the time needed for checking can be shortened, knot
Fruit is the cheap semiconductor device that can improve price, complete with that can improve electrical characteristics using the inspection method of the present invention
Semiconductor device and can reduce semiconductor device substandard product incidence effect.
The present invention does not add special power supply, but the simple structure that the electrical characteristics for carrying out script is used to test, and
Switch the path of assist probes side by using switching relay, thus, it is possible to try hard to reduce contact resistance.It is such as above-mentioned existing
In some patent documents 1 it is recorded as, gradually voltage is made to increase without being such as obtained and makes the voltage of resistance rapid drawdown in this way
Complicated control, it will be able to improve required effect.Even if in the hot test environment more than 100 DEG C, in terminal
The surface alloying layer of lead be easier to aoxidize or peeled by it oxidation film covering in the case of, also can be as needed,
Good low resistance contact state is obtained using the simple processing for reducing contact resistance.By maintaining good contact for a long time
State, cleaning frequency so as to make probe front lead to probe (such as contact probe) more with the deterioration of contact condition
It changes that the period is elongated, thus enables that the process for preferably maintaining experiment becomes easy.
Label declaration
1：Primary probe
2：Assist probes
3：Upper shell
4：Lower housing
20：Semiconductor device
21：Terminal lead
30：Socket
31：Testing machine
32：Power supply applies
33：Reponse system senses
34：Power ground
35：Switch relay
Claims (9)
1. a kind of inspection method of semiconductor device, using primary probe and assist probes to the semiconductor with multiple signal terminals
The electrical characteristics of device are measured, and the primary probe is used to apply voltage electricity to the semiconductor device when carrying out the measure
Stream, the assist probes are used to be measured the voltage and current for being applied to the semiconductor device when carrying out the measure,
It is characterised in that it includes：
The first step in the first step, makes the one of the primary probe and the assist probes and the semiconductor device
A signal terminal is in contact, and to signal terminal contact between the primary probe and the assist probes
Resistance is measured, and will be measured the obtained contact resistance and is compared with first reference value threshold value, obtained when measure described in connect
Resistance get an electric shock when within the first reference value threshold value, proceeds to the second step, when the contact resistance that measure obtains does not exist
When within the first reference value threshold value, the third step is proceeded to；
The second step in the second step, is measured the electrical characteristics of the semiconductor device；
The third step, in the third step, to a signal terminal and the primary probe and the assist probes it
Between contact resistance be measured, the obtained contact resistance will be measured and compared with the second a reference value threshold value, when the third
The contact resistance measured in process proceeds to the fourth step when within the second a reference value threshold value；
The fourth step, in the fourth step, according to the contact resistance measured in the first step, determine via
The benchmark electric energy that the primary probe and the assist probes apply to a signal terminal, proceeds to the 5th process；
5th process, will be by the fourth step institute via the primary probe and the assist probes in the 5th process
Determining benchmark electric energy is supplied to a signal terminal, proceeds to the 6th process；And
6th process, in the 6th process, to a signal terminal and the primary probe and the assist probes it
Between contact resistance be measured, the obtained contact resistance will be measured and compared with first reference value threshold value, when measure obtains
The contact resistance when within the first reference value threshold value, proceed to the second step.
2. the inspection method of semiconductor device as described in claim 1, which is characterized in that the first reference value threshold value is
0.1 Ω ＜ Rcon ＜, 1 Ω, the second a reference value threshold value are 1 Ω≤10 Ω of Rcon ＜.
3. the inspection method of semiconductor device as claimed in claim 1 or 2, which is characterized in that
The electric energy is 0.01 watt-second to 0.05 watt-second.
4. the inspection method of semiconductor device as claimed in claim 1 or 2, which is characterized in that
The electric energy is the product of time of the power with applying the power, applies range of the time in 1ms to 10ms of the power
It is interior.
5. the inspection method of semiconductor device as claimed in claim 1 or 2, which is characterized in that
The environment temperature of the electrical characteristics experiment is up to 150 DEG C of high-temperature atmosphere, has and easily exists under the high-temperature atmosphere
The surface of the terminal lead of semiconductor device forms the metal material of oxidation film.
6. the inspection method of semiconductor device as claimed in claim 1 or 2, which is characterized in that
In the 5th process, about the benchmark electric energy for being applied to a signal terminal, by the way that its electric current is made to be definite value
And its application time is adjusted, thus meet the benchmark electric energy to realize the reduction of contact resistance.
7. the inspection method of semiconductor device as claimed in claim 5, which is characterized in that
In the 5th process, about the benchmark electric energy for being applied to a signal terminal, by the way that its application time is made to be
Definite value and its current value is adjusted, thus meet the benchmark electric energy to realize the reduction of contact resistance.
8. the inspection method of the semiconductor device as described in claim 1,2, any one of 7, which is characterized in that
In the check device of the semiconductor device, using primary probe and assist probes to the semiconductor with multiple signal terminals
The electrical characteristics of device are measured, and the primary probe is used to apply voltage electricity to the semiconductor device when carrying out the measure
Stream, the assist probes are used to be measured the voltage and current for being applied to the semiconductor device when carrying out the measure,
Using the primary probe and the assist probes is made to be in contact with a signal terminal of the semiconductor device and
The device that contact resistance between one signal terminal and the primary probe and the assist probes can be measured,
The distribution of multiple contact resistance values obtained according to measured in advance, using the higher contact resistance value of the frequency of occurrences as mesh
Mark reduces the contact resistance value so that the electric energy for meeting 0.1 Ω ＜ Rcon ＜, 1 Ω is obtained, makes the electric energy and the benchmark electric energy
It is corresponding.
9. a kind of manufacturing method of semiconductor device, which is characterized in that
Use the detection method of the semiconductor device recorded in any one of claim 1 to 8.
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| JP2013-056593 | 2013-03-19 | ||
| JP2013056593A JP6155725B2 (en) | 2013-03-19 | 2013-03-19 | Semiconductor device inspection method and semiconductor device manufacturing method using the same |
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| US9928333B2 (en) * | 2015-07-30 | 2018-03-27 | Samsung Electronics Co., Ltd. | Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semicondutor device using the same |
| KR102415952B1 (en) | 2015-07-30 | 2022-07-05 | 삼성전자주식회사 | Method of design layout of semiconductor device, and method for manufacturing semiconductor device using the same |
| CN109073705B (en) * | 2016-11-16 | 2021-03-23 | 富士电机株式会社 | Semiconductor test circuit, semiconductor test apparatus, and semiconductor test method |
| CN108333411B (en) * | 2018-01-12 | 2020-06-16 | 上海华虹宏力半导体制造有限公司 | Circuit and method for reducing analog voltage measurement error |
| TWI668450B (en) | 2018-07-31 | 2019-08-11 | 華邦電子股份有限公司 | Testing systems and methods thereof |
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| JP6155725B2 (en) | 2017-07-05 |
| CN104062574A (en) | 2014-09-24 |
| JP2014182005A (en) | 2014-09-29 |
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