CN101221212A - Inspection method, inspection apparatus and computer-readable storage medium storing program - Google Patents

Inspection method, inspection apparatus and computer-readable storage medium storing program Download PDF

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Publication number
CN101221212A
CN101221212A CNA2007103023490A CN200710302349A CN101221212A CN 101221212 A CN101221212 A CN 101221212A CN A2007103023490 A CNA2007103023490 A CN A2007103023490A CN 200710302349 A CN200710302349 A CN 200710302349A CN 101221212 A CN101221212 A CN 101221212A
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CN
China
Prior art keywords
probe
clinkering
voltage
circuit
checked property
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Pending
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CNA2007103023490A
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Chinese (zh)
Inventor
熊谷泰德
陶夏
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101221212A publication Critical patent/CN101221212A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Abstract

The invention is aimed at making an electric conduction between a probe and a polar plate more stable. A probe card of a detection device of the invention has: a weld circuit (41) which is used for imposing a voltage to a couple of probes (10a, 10b) which is touch with chip (W) and forms a group by two probes to generate a melting guitar phenomenon and making the electric conduction between the probes and the chips (W), a commutation circuit which is used for electrically connecting the couple of probes (10a, 10b) to the weld circuit (41) and freely commutating a polarity of the voltage which imposes to the couple of probes (10a, 10b). Imposing two times of the voltage to the couple of probes (10a, 10b) which is touch with the chip (W) and executing two times welding. The polarity of the voltage which imposes to the couple of probes (10a, 10b) is changed in the two times welding.

Description

Inspection method, testing fixture and stored the computer-readable recording medium of program
Technical field
The present invention relates to check the inspection method of the electrical characteristics of checked property, carry out the testing fixture of this inspection method, and the storage medium of having stored the program that is used to realize described inspection method.
Background technology
For example, be formed on the electrical characteristics of the circuit such as IC, LSI on the semiconductor wafer with the testing fixture inspection.Testing fixture has the probe that is electrically connected on the verifier, a plurality of probes is housed below this probe.By each electrode with the circuit on probe and the wafer contact, to the electrode input electrical signal, carry out the inspection of circuit.
But,, just can not carry out suitable inspection because being difficult to input electrical signal if the electrode surface of wafer has formed oxide film.Also have, if probe firmly is pressed in the danger that damage probe and circuit are just arranged on the electrode surface in order to conduct.Therefore before having the people to propose to check by two one group a pair of probe (probe to) is contacted with electrode with low-pressure and to probe between apply voltage and cause clinkering (fritting) phenomenon (hereinafter referred to as " clinkering "), make electrode surface produce insulation breakdown, the good method that conducts is arranged (with reference to Japanese documentation 1,2) between probe and the electrode thereby make.And the clinkering phenomenon is meant by apply high-potential gracient to the metal surface that forms oxide film and makes oxide film produce insulation breakdown, thus the phenomenon that makes the metal surface have electric current to flow through.
Japanese documentation 1: the Japanese documentation spy opens the 2002-139542 communique;
Japanese documentation 2: the Japanese documentation spy opens the 2004-191208 communique.
Summary of the invention
(inventing problem to be solved)
Inspection method according to above-mentioned use clinkering, even the electrode of probe and wafer is contacted also can obtain good electrical conducting between probe and the electrode with lower load, but, require more stably to obtain the good conducting between probe and wafer for example for the inspection reliability of the electrical characteristics that improve wafer.
Given this present invention makes, and its purpose is more stably to obtain conducting between probe and checked property in the electrical characteristics inspection of checked properties such as wafer.
(method of dealing with problems)
In order to achieve the above object, the present invention contacts probe with checked property, carry out the inspection of the electrical characteristics of checked property, it is characterized in that having: two one group probe pair is contacted with checked property, produce the clinkering phenomenon to applying voltage to this probe, make the clinkering operation that conducts between probe and the checked property, wherein, in described clinkering operation to described probe between apply repeatedly voltage, and alternately change to the polarity of this probe to the voltage that applies.
Situation about being confirmed by the inventor is: at the right anode-side of the probe that is applied in voltage and cathode side the bias that conducts between probe and the checked property can take place during clinkering.According to the present invention, because of alternately changing, thereby removed the bias of the conducting property of right anode-side of probe and cathode side, and obtained high conduction at the right the two poles of the earth of probe to the polarity of probe to the voltage that applies.Consequently, can stably obtain probe to and checked property between high conduction.
For above-mentioned inspection method, also can in the clinkering operation, comprise: finish after probe applies primary voltage, measure the operation of the conducting property of probe and checked property, when the conducting property of this mensuration does not reach predefined benchmark, carry out to change polarity and next time voltage is applied to described probe.
Can be according to the identical mode of number of times of anode and negative electrode is carried out to described probe to repeatedly voltage.
From other viewpoint, the invention provides probe connect with checked property and contact, and the testing fixture that carries out the electrical characteristics inspection of checked property, it is characterized in that, have: the clinkering circuit, to two one group that contacts with checked property probe between apply voltage, produce the clinkering phenomenon and make between probe and the checked property and conduct; Commutation circuit to being electrically connected with the clinkering circuit, and is freely switched described probe to the polarity of described probe to the voltage that applies.
(invention effect)
According to the present invention, because of the high conduction that obtains probe and checked property that can be stable, so can improve the reliability that electrical characteristics are checked.
Description of drawings
Fig. 1 is the side view that the general structure of testing fixture is shown;
Fig. 2 is the synoptic diagram of an example that the circuit structure of probe is shown;
Fig. 3 is the process flow diagram that checking process is shown;
Fig. 4 is the key diagram of the right polarity of probe when clinkering for the first time is shown;
Fig. 5 is the key diagram of the right polarity of probe when clinkering for the second time is shown;
(a) of Fig. 6 is the experiment photo that the probe tip of the anode-side of carrying out repeatedly clinkering is shown, and (b) is the experiment photo that the probe tip of the cathode side that carries out repeatedly clinkering is shown;
Fig. 7 be illustrate when carrying out 1 clinkering, the table of the sample number of the electrical conductance quality when not changing polarity and carrying out 2 clinkerings, when changing polarity and carrying out 2 clinkerings;
Fig. 8 is the chart that the accumulative total conducting success ratio of each method among Fig. 7 is shown;
Fig. 9 illustrates the electrical block diagram with probe of measuring circuit;
The process flow diagram of the scrutiny program when Figure 10 is the place's of showing mensuration resistance.
Embodiment
Below preferred implementation of the present invention is described.Fig. 1 is the key diagram that testing fixture 1 structure in the present embodiment is shown.
Testing fixture 1 for example comprises: probe 2, maintenance hold the chuck 3 as the wafer W of checked property, the moving structure 4 and the tester 5 of mobile chuck 3.
Probe 2 for example comprises the printed-wiring board (PWB) 12 that a plurality of probes 10 is supported on following contactor 11 and is installed in these contactor 11 upsides.Each probe 10 is electrically connected with printed-wiring board (PWB) 12 by the main body of contactor 11.Be electrically connected verifier 5 on the probe 2, can controlling the action of probe 2 by the electric signal that sends from verifier 5.Circuit structure about probe 2 will be narrated in the back.
Chuck 3 is for having the approximate circle plate-like of upper horizontal surface.Be provided with not shown attraction mouth above the chuck 3, can wafer W be kept holding on chuck 3 by the attraction of this attraction mouth.
Moving structure 4 for example have lifting drive divisions 20 such as the cylinder of lifting chuck 3 with vertical both direction (directions X and Y direction) the mobile X-Y platform 21 of lifting drive division 20 on horizontal direction.The wafer W that remains on the chuck 3 can be moved thus three-dimensionally, the surface electrode of wafer W and probe 10 are contacted.
As shown in Figure 2, probe 2 for example comprises: check circuit 40 is used to carry out the electric signal that electrical characteristics are checked at two one group probe 10a, 10b transmitting-receiving; Clinkering circuit 41 applies voltage and produces the clinkering phenomenon 10a, 10b to probe; First commutation circuit 42, probe being connected of switching check circuit 40 and clinkering circuit 41 to 10a, 10b; Second commutation circuit 43 is switched the polarity that to probe 10a, 10b is applied voltage by clinkering circuit 41.
First commutation circuit 42 for example has the switching device 42a that is connected with terminal A3 with terminal A1 that is connected of switched terminal A1 and terminal A2, described terminal A1 links to each other with probe 10a, described terminal A2 links to each other with the cathode terminal B1 of check circuit 40, and described terminal A3 links to each other with arbitrary polarity terminal D1, the D2 of clinkering circuit 41.In addition, first commutation circuit 42 for example has the switching device 42b that is connected with terminal A6 with terminal A4 that is connected of switched terminal A4 and terminal A5, described terminal A4 links to each other with probe 10b, described terminal A5 links to each other with the anode terminal B2 of check circuit 40, and described terminal A6 links to each other with arbitrary polarity terminal D1, the D2 of clinkering circuit 41.
Second commutation circuit 43 for example has the switching device 43a that is connected with terminal C3 with terminal C1 that is connected of switched terminal C1 and terminal C2, described terminal C1 links to each other with the terminal A3 of first commutation circuit 42, described terminal C2 links to each other with the anode terminal D2 of clinkering circuit 41, and described terminal C3 links to each other with the cathode terminal D1 of clinkering circuit 41.In addition, second commutation circuit 43 has the switching device 43b that is connected with terminal C6 with terminal C4 that is connected of switched terminal C4 and terminal C5, described terminal C4 links to each other with the terminal A6 of first commutation circuit 42, described terminal C5 links to each other with the cathode terminal D1 of clinkering circuit 41, and described terminal C6 links to each other with the anode terminal D2 of clinkering circuit 41.
Verifier 5 for example is provided with control part 50, the action of these control part 50 control check circuits 40, clinkering circuit 41, first commutation circuit 42 and second commutation circuit 43 etc.Control part 50 for example is made of the computing machine with CPU or storer, for example realizes the checking process of testing fixture 1 by execution the program in the storer of being stored in.And the various programs of using for the checking process that realizes testing fixture 1 are for example to be stored in storage medium and to be installed to control part 50 from storage medium, and this storage medium is the storage mediums such as CD of embodied on computer readable.
Electrical characteristics checking process to the wafer W of carrying out in the testing fixture 1 that as above constitutes describes below.Fig. 3 is the process flow diagram of checking process in the present embodiment.
At first as shown in Figure 1, wafer W is kept holding by chuck 3.Wafer W on the chuck 3 is moved mechanism 4 and promotes then, as shown in Figure 2 probe is contacted with each electrode P on the wafer W 10a, 10b.
At this moment by first commutation circuit 42 clinkering circuit 41 and probe are electrically connected 10a, 10b.For example the cathode terminal D1 of clinkering circuit 41 is linked to each other with probe 10a, the anode terminal D2 of clinkering circuit 41 is linked to each other with probe 10b by second commutation circuit 43.
Between probe is to 10a, 10b, apply the voltage of 105～106V/cm degree electric potential gradient for example by clinkering circuit 41 as shown in Figure 4 then and make probe 10a become negative electrode, make probe 10b become anode.Produce the clinkering phenomenon thus and destroy the insulation of the oxide film on electrode P surface, probe is conducted 10a, 10b and electrode P carry out clinkering operation (the operation S1 of Fig. 3) for the first time.And can will improve gradually the voltage that 10a, 10b apply to probe in the clinkering operation, when reaching the predetermined clinkering that finishes when applying voltage, also can monitor value of current flowing or its magnitude of voltage between probe is to 10a, 10b, when current value or magnitude of voltage reach desired value, finish clinkering.
Finish after the operation of clinkering for the first time the anode terminal D2 of clinkering circuit 41 to be connected to probe 10a, the cathode terminal D1 of clinkering circuit 41 is connected to probe 10b, will be applied to the reversing (the operation S2 of Fig. 3) of probe the voltage of 10a, 10b by second commutation circuit 43.
Between probe is to 10a, 10b, apply with the voltage of clinkering operation S1 opposite polarity for the first time by clinkering circuit 41 as shown in Figure 5 then and make probe 10a become anode, make probe 10b become negative electrode.Produce clinkering phenomenon once more thus, probe is conducted 10a, 10b and electrode P carry out clinkering operation (the operation S3 of Fig. 3) for the second time.
By first commutation circuit 42 check circuit 40 with probe to 10a, 10b be electrically connected thereafter.To the probe electric signal that output is used to check to 10a, 10b, check the electrical characteristics (the operation S4 of Fig. 3) of the circuit on the wafer W from check circuit 40.
Chuck 3 descends after the inspection of the electrical characteristics of end wafer W, unloads wafer W from chuck 3 thereafter, finishes a series of checking process.
Carried out the clinkering operation according to as above embodiment 2 times because of the polarity that changes the voltage that 10a, 10b is applied to probe, so can stablize probe conducting to the electrode P of 10a, 10b and wafer W.Below the effect of this form of implementation is verified.
The state ((b) among Fig. 6) of the tips of probes portion of the state ((a) among Fig. 6) of the tips of probes portion of anode-side and cathode side when Fig. 6 shows and do not change polarity and carry out repeatedly clinkering.In this experiment, the aluminum electrode contacted with Pd (palladium) manufacturing probe and carried out 2000 times clinkering.The probe of cathode side has adhered to more aluminium clinkering thing than the probe of anode-side as shown in Figure 6.Because of can thinking that adhering to of clinkering thing is many more, the engaging force of probe and electrode is just strong more during clinkering, and it is conducted, and experiment can confirm to be applied in the right negative electrode of the probe of voltage and the conducting property of anode has bias at least thus.And because the cause of the combination of electrode material and probe material, the electrode that the adhesion amount of clinkering thing is many can change, and the size of the conduction of negative electrode and anode can change.
With this experimental result be the probe of basis when having carried out following situation to the comparative experiments that conducts of the electrode of wafer W, that is: only carry out the situation of a clinkering (method in the past); Do not change polarity and carry out the situation of 2 clinkerings; Change the situation that polarity is carried out 2 clinkerings.Fig. 7 is the table that this experimental result is shown.This experiment is 1 group to above-mentioned situation with 6000 in sample and carried out 3 groups of (I in Fig. 7 table, II, III) checking processes, estimated probe to the quality of the conducting property of electrode.Illustrated among Fig. 7 carry out the clinkering first time after conduction bad, carried out the also bad sample number of conduction even carry out conduction improves after the clinkering for the second time sample number and clinkering for the first time and the both of clinkering for the second time.Become bad sample number after showing this clinkering when in addition, only carrying out a clinkering.
See this experimental result, have when polarity is carried out 2 clinkerings when finally can not get conduction, but finally to become the bad sample number of conduction when polarity is carried out 2 clinkerings be zero when changing that all samples have all obtained good conduction when not changing.Can think that this is to carry out the cause that the conduction bias of right negative electrode of above-mentioned probe and anode has been removed in clinkering because of changing polarity.
According to described experimental result, can confirm to be applied to the polarity of probe to the voltage of 10a, 10b by as present embodiment, changing, can make probe stable to conducting of 10a, 10b and electrode P.Therefore according to present embodiment, can make probe stable, thereby can improve the inspection reliability of electrical characteristics conducting of 10a, 10b and electrode P.
In addition, according to described embodiment, can prolong the serviceable life of probe to 10a, 10b.For example Fig. 8 illustrates only to carry out a clinkering, do not change that polarity is carried out 2 clinkerings, the chart of the accumulative total conducting success ratio when changing polarity and carrying out 2 clinkerings.The chart transverse axis is the number of times of the clinkering process of described each situation.Can keep high conducting success ratio when carrying out 2 clinkerings according to this chart change polarity.As this factor, for example the clinkering thing of electrode P is not concentrated attached on the right probe of probe, but disperses attached to probe therefore to well imagine on 10a, 10b two, keeps the right good conduction of probe between can be for a long time.What from then on the result can confirm is, is applied to the polarity of probe to the voltage of 10a, 10b by change, can prolong the serviceable life of probe to 10a, 10b.
Though the clinkering number of times is 2 times in above embodiment, be not limited to 2 times, so long as repeatedly get final product, also can be more than 3 times.At this moment, by making that to be applied to each probe identical to the number of times of the negative electrode of the voltage on 10a, the 10b and anode, the degradation speed of probe 10a and probe 10b also equates, so can further prolong the serviceable life of probe to 10a, 10b.
In above embodiment, carried out 2 clinkerings, but also can for example carry out measuring the conducting property of probe after the clinkering for the first time, when having only conducting property when its mensuration not reach predetermined benchmark, just changed polarity and carry out 2 clinkerings 10a, 10b and electrode P.
In this case, for example be equipped with in the probe 2 of testing fixture 1 and measure circuit 60 as shown in Figure 9.Measure circuit 60 and for example be connected electrically in clinkering circuit 41 and probe between 10a, the 10b.Measuring circuit 60 is for example by 10a, 10b being applied the voltage of regulation to the probe that contacts with electrode P, and detect the electric current that between probe is to 10a, 10b, flows this moment, thereby can determine as the resistance of probe to the conducting property of the electrode P between 10a, the 10b.The measurement result of this resistance for example is input to control part 50, and whether control part 50 judges this resistance less than predetermined reference value, carries out clinkering for the second time when this resistance is not less than predetermined benchmark.
And when carrying out checking process, finish as shown in figure 10 to measure the resistance (the operation S5 of Figure 10) of probe by measuring circuit 60 after the clinkering for the first time to the electrode P between 10a, the 10b.Comparison resistance R and reference value E (the operation S6 of Figure 10) in control part 50.Carry out the clinkering second time when resistance R changes polarity during more than or equal to reference value E, check the electrical characteristics of wafer W thereafter.Do not carry out the clinkering second time when the resistance R of measuring during less than reference value E, directly carry out the electrical characteristics inspection of wafer W.
According to this example, when the resistance of the electrode P of wafer W after the clinkering first time does not drop to reference value when following, change polarity and carry out the clinkering second time, therefore, as narrating, obtain the high conduction of probe surely to 10a, 10b and electrode P at above-mentioned embodiment.In addition, caused obtaining the conduction of wishing as the result of the clinkering first time between probe is to 10a, 10b and electrode P, then a clinkering can solve, thereby can shorten the checking process time.In this example, can also carry out clinkering more than 2 times, finish for the second time later clinkering after, carry out the resistance measurement of electrode P, carry out the clinkering of next time according to measurement result.
In above-mentioned example, be to finish to confirm the conducting property of probe after the clinkering for the first time, but also can when carrying out first time clinkering, confirm its conduction 10a, 10b and electrode P.Also can for example monitor when carrying out the first time clinkering probe in the case to value of current flowing between 10a, the 10b or its magnitude of voltage, confirm the conducting property of probe to 10a, 10b and electrode P, even then for example when between probe is to 10a, 10b, applying predetermined setting voltage, measure electric current or measure voltage when also not reaching desired value, carry out the clinkering second time.
More than, with reference to description of drawings preferred implementation of the present invention, but the present invention is not limited to described example.It will be apparent to one skilled in the art that to obtain various Change Examples or change example in the described aim scope of claims, these naturally should belong to technical scope of the present invention.For example also can use the H electric bridge in the commutation circuit 43 of the testing fixture 1 of narration in the above embodiment.In addition, checked checked property also can be that wafer W FPD (flat pannel display) in addition waits other substrates in the testing fixture of narrating in above embodiment 1.
(industrial applicibility)
The present invention can so that the conducting property of checked property and probe is stable, improve the inspection reliability Shi Feichang is useful.

Claims (6)

1. an inspection method contacts probe with checked property, carries out the inspection of the electrical characteristics of checked property, it is characterized in that having:
Two one group probe pair is contacted with checked property, produces the clinkering phenomenon to applying voltage, make the clinkering operation that conducts between probe and the checked property to this probe,
Wherein, in described clinkering operation to described probe between apply repeatedly voltage, and alternately change to the polarity of this probe to the voltage that applies.
2. inspection method as claimed in claim 1 is characterized in that,
In the clinkering operation, also have: finish after probe applies primary voltage, measuring the operation of the conducting property of probe and checked property,
When the conducting property of this mensuration did not reach predefined benchmark, voltage applied to carrying out next time to described probe to carry out change polarity.
3. inspection method as claimed in claim 1 is characterized in that,
Apply according to the identical mode of number of times of anode and negative electrode is carried out to the right repeatedly voltage of described probe.
4. a testing fixture contacts probe with checked property, carries out the inspection of the electrical characteristics of checked property, it is characterized in that having:
The clinkering circuit, to two one group that contacts with checked property probe between apply voltage, produce the clinkering phenomenon, make between probe and the checked property to conduct;
Commutation circuit to being electrically connected with the clinkering circuit, and can freely be switched described probe to the polarity of described probe to the voltage that applies.
5. testing fixture as claimed in claim 4 is characterized in that also having:
Measure circuit, use described probe measuring the conducting property between probe and the checked property.
6. computer-readable recording medium stores the program of moving on the computing machine of the control part of control detection device, make to require arbitrary described inspection method in 1～3 by the testing fixture enforcement of rights.
CNA2007103023490A 2006-12-25 2007-12-25 Inspection method, inspection apparatus and computer-readable storage medium storing program Pending CN101221212A (en)

Applications Claiming Priority (2)

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JP2006348523 2006-12-25
JP2006348523A JP2008157818A (en) 2006-12-25 2006-12-25 Inspection method, inspection device and computer-readable storage medium storing program

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CN101221212A true CN101221212A (en) 2008-07-16

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EP (1) EP1939640A3 (en)
JP (1) JP2008157818A (en)
KR (1) KR100965440B1 (en)
CN (1) CN101221212A (en)
TW (1) TW200842379A (en)

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CN110383077B (en) * 2017-03-07 2022-03-29 卡普雷斯股份有限公司 Probe for testing electrical properties of a test sample

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US20080150562A1 (en) 2008-06-26
TW200842379A (en) 2008-11-01
KR100965440B1 (en) 2010-06-24
US7633309B2 (en) 2009-12-15
JP2008157818A (en) 2008-07-10
EP1939640A2 (en) 2008-07-02
KR20080059523A (en) 2008-06-30

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