CN104052399B - Method for estimating reliability of photovoltaic bypass diode - Google Patents
Method for estimating reliability of photovoltaic bypass diode Download PDFInfo
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- CN104052399B CN104052399B CN201410275894.5A CN201410275894A CN104052399B CN 104052399 B CN104052399 B CN 104052399B CN 201410275894 A CN201410275894 A CN 201410275894A CN 104052399 B CN104052399 B CN 104052399B
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- 230000007613 environmental effect Effects 0.000 claims description 24
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- 238000004088 simulation Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
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- 230000003068 static effect Effects 0.000 claims description 4
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- 230000006641 stabilisation Effects 0.000 description 3
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- 230000032683 aging Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a device and method for estimating the reliability of a photovoltaic bypass diode. The device is characterized by comprising a junction box, the bypass diode, thermal couplers and a battery, wherein the bypass diode is connected to the two ends of the battery in parallel in the reverse direction, the junction box comprises a box body, electrodes and a cover, the bypass diode is arranged between the electrodes, and the cover is provided with two small holes where the thermal couplers are placed. According to the device and method for estimating the reliability of the photovoltaic bypass diode, an environment box is combined with a double-electrode power source, the working conditions, existing under tree typical conditions, of the bypass diode are simulated, a reasonable bypass diode reliability estimation system is established through analysis of experimental results, the domestic defect in the aspect of bypass diode reliability assessment is overcome, a basis is provided for an enterprise when the enterprise selects an appropriate bypass diode according to an external environment, and loss caused by uneven irradiation of a photovoltaic module is reduced.
Description
Technical field
The present invention relates to a kind of photovoltaic by-pass diode reliability estimation method, belong to electronic measuring technology field.
Background technology
Along with these several years domestic photovoltaic industrial booms, then, along with photovoltaic system installed capacity
Quick growth, safety in operation and the integrity problem of photovoltaic system gradually appear, and therefore, carry out photovoltaic
The reliability assessment architectural study of by-pass diode in assembly, to promoting the reliability of photovoltaic module and life-span all
Being very important, also production and selection for by-pass diode provide foundation.
Under non-uniform irradiation, the monomer photovoltaic cell output electric current under relatively low irradiation diminishes so that its two ends are in
Reverse bias, thus produce hot-spot phenomenon, here it is hot spot phenomenon, this phenomenon meeting consumable components
Power, seriously possibly even causes the permanent failure of photovoltaic module.Meanwhile, in order to reduce this phenomenon
Infringement to assembly, it will usually at one bypass diode of assembly two ends reverse parallel connection, when photovoltaic cell is serious
During reverse bias, for protecting photovoltaic cell, preventing it from producing the by-pass diode of high bias voltage, will
Being in forward work conducting state, its big calorimetric produced makes diode be brought rapidly up, and long-play also will
Produce integrity problem.Now some photovoltaic mechanism for testing of China, such as photovoltaic inspection center of country etc., also
Carry out the test evaluation work of some photovoltaic reliabilities, but do not had in terms of the reliability of by-pass diode
The appraisal procedure of one more system.
Summary of the invention
For solving the deficiencies in the prior art, it is an object of the invention to provide a kind of reliable at by-pass diode
The apparatus for evaluating of property aspect more system and method.
In order to realize above-mentioned target, the present invention adopts the following technical scheme that:
A kind of photovoltaic by-pass diode reliability assessment device, is characterized in that, including rosette, bypass diode,
Thermocouple and battery；Described bypass diode is connected in reverse parallel in the two ends of described battery；Described rosette includes
Box body, electrode and lid；Described bypass diode is arranged between said electrodes；It is provided with on described lid
Two for placing the aperture of described thermocouple.
Aforementioned thermocouple is connected with the shell of described bypass diode.
A kind of photovoltaic by-pass diode reliability estimation method, is characterized in that, performs according to following steps:
1) simulated assembly monolithic battery is by the situation of shade static barriers, and environmental cabinet temperature is adjusted to analog temperature, double
Pole power supply applies positive bias-voltage, makes by-pass diode start working under forward current, waits by-pass diode
Lost efficacy, recorded the temperature of by-pass diode and the time of test；
2) there are shade, unblanketed alternating senses in the simulation short time, environmental cabinet temperature is adjusted to analog temperature, double
Pole power supply is pressed certain frequency and is switched positive bias-voltage and reversed bias voltage, constantly impacts by-pass diode, waits bypass
Diode fails, records temperature and the testing time of by-pass diode；
3) there is not the situation of mismatch in simulated assembly, and environmental cabinet is adjusted to analog temperature, and bipolar power supply applies reversed bias voltage,
Wait by-pass diode lost efficacy, and recorded the temperature of by-pass diode and the time of test；
4) research by-pass diode characteristic performance parameter Changing Pattern under the conditions of different chamber's build-in test, and real with outdoor
Border ruuning situation com-parison and analysis, determines that above three step reliability testings need duration and environmental cabinet temperature
Parameter, direct current power source voltage, the relation of current parameters.
Aforesaid a kind of photovoltaic by-pass diode reliability estimation method, is characterized in that, in step 1) in, institute
Stating analog temperature is 70 DEG C-80 DEG C.
Aforesaid a kind of photovoltaic by-pass diode reliability estimation method, is characterized in that, in step 2) in, institute
Stating analog temperature is 70 DEG C-80 DEG C.
Aforesaid a kind of photovoltaic by-pass diode reliability estimation method, is characterized in that, in step 3) in, institute
Stating analog temperature is 70 DEG C-80 DEG C.
The beneficial effect that the present invention is reached: the present invention, by environmental cabinet and bipolar power supply being combined, simulates
The working condition of three kinds of bypass diodes in typical case, by setting up one more to the analysis of experimental result
Reasonably the reliability assessment system of bypass diode, makes up domestic in terms of bypass diode reliability assessment
Deficiency, select suitable bypass diode to provide foundation for enterprise according to external environment, reduce photovoltaic group
The loss that part is caused because of non-uniform irradiation.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of the present invention；
Fig. 2 is the structural representation of rosette；
Fig. 3 is bypass diode accelerated aging test schematic diagram；
Fig. 4 is photovoltaic diode forward and reverse transfer test electrical schematic diagram.
The implication of reference in figure:
1-bypass diode, 2-rosette, 3-battery, 4-lid, 5-box body.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings.Following example are only used for clearly illustrating
Technical scheme, and can not limit the scope of the invention with this.
A kind of photovoltaic by-pass diode reliability assessment device, including rosette 2, bypass diode 1, thermoelectricity
Even summation battery 3.Rosette 2 includes box body 5, electrode and lid 4, and bypass diode 1 is connected in reverse parallel in electricity
The two ends in pond and setting are in-between the electrodes.Two it are provided with for the aperture placing thermocouple on lid 4.Heat
Galvanic couple is connected with the shell of bypass diode 1.
Apparatus of the present invention traditional to determining under voltage on the basis of the resistance to reverse biased aptitude tests of battery, to light
Photovoltaic assembly by static barriers, dynamic barriers and under the conditions of having unobstructed alternation, by-pass diode reliable
Property is tested and is assessed.This appraisal procedure is: by the environmental cabinet operating temperature of computer monitoring, thermoelectricity
Even connecting bypass diode records the temperature of by-pass diode shell, the running voltage of bipolar power supply and electric current,
Observe when by-pass diode lost efficacy, the time of work and the temperature of by-pass diode.Determine in this temperature and
Out-of-service time of by-pass diode and temperature in the case of supply voltage.
Specifically perform according to following steps:
1) simulated assembly monolithic battery is by the situation of shade static barriers, and environmental cabinet temperature is adjusted to analog temperature, double
Pole power supply applies positive bias-voltage, makes by-pass diode start working under forward current, waits by-pass diode
Lost efficacy, recorded the temperature of by-pass diode and the time of test；Analog temperature is 70 DEG C-80 DEG C.
2) there are shade, unblanketed alternating senses (rising and falling of such as flying bird), by environmental cabinet temperature in the simulation short time
Degree is adjusted to analog temperature, and bipolar power supply is pressed certain frequency and switched positive bias-voltage and reversed bias voltage, constantly impacts side
Logical diode, waits that by-pass diode lost efficacy, records temperature and the testing time of by-pass diode；Simulation
Temperature is 70 DEG C-80 DEG C.
3) there is not the situation of mismatch in simulated assembly, and environmental cabinet is adjusted to analog temperature, and bipolar power supply applies reversed bias voltage,
Wait by-pass diode lost efficacy, and recorded the temperature of by-pass diode and the time of test；Analog temperature is 70 DEG C
-80℃。
4) research by-pass diode characteristic performance parameter Changing Pattern under the conditions of different chamber's build-in test, and real with outdoor
Border ruuning situation com-parison and analysis, determines that above three step reliability testings need duration and environmental cabinet temperature
Parameter, direct current power source voltage, the relation of current parameters.
As it is shown on figure 3, we can be by adjusting temperature and the voltage and current of bipolar power supply of environment chest
Size and Orientation carry out simulated assembly working condition in practice.
Simulation steps 1) situation: rosette is placed in environmental cabinet, bypass diode two ends draw electricity
Line, by the circular hole above rosette, connects thermocouple, by the temperature of thermocouple monitoring diode case,
Rosette is placed in environmental cabinet, by environmental cabinet temperature stabilization at about 75 DEG C, by the positive pole of bipolar power supply
Connect the negative pole of rosette, logical forward current, make electric current forward pass through bypass diode, by the electric current of power supply
It is adjusted to the short circuit current of circuit, the skin temperature with computer record and monitoring bypass diode and voltage, then
Record the time of diode fails, and calculate the junction temperature temperature of bypass diode.
Simulation steps 2) situation: rosette is placed in environmental cabinet, bypass diode two ends draw electricity
Line, by the circular hole above rosette, connects thermocouple, by the temperature of thermocouple monitoring bypass diode shell
Degree, is placed into rosette in environmental cabinet, by environmental cabinet temperature stabilization at about 75 DEG C, by bipolar power supply
Positive pole connects the negative pole of rosette, logical forward current, makes electric current forward pass through bypass diode, by power supply
Electric current is adjusted to the short circuit current of circuit.Assume this area in one day flying bird rise and fall 20 times, stop 30s every time, will
Bipolar voltage is arranged to 15s and switches the most positive and negative level, by computer record and the skin temperature of monitoring bypass diode
And voltage, then record the time that bypass diode lost efficacy, and calculate the junction temperature temperature of bypass diode.
Simulation steps 3) situation: rosette is prevented in environmental cabinet, bypass diode two ends draw electricity
Line, by the circular hole above rosette, connects thermocouple, by the temperature of thermocouple monitoring bypass diode shell
Degree, is placed into rosette in environmental cabinet, by environmental cabinet temperature stabilization at about 75 DEG C, by bipolar power supply
Positive pole connects the positive pole of rosette, logical forward current, make electric current back through bypass diode, by power supply
Electric current is adjusted to the short circuit current of circuit, the skin temperature with computer record and monitoring bypass diode and voltage, so
After record the time that bypass diode lost efficacy, and calculate the junction temperature temperature of bypass diode.
In conjunction with semiconductor electronic component performance degradation rate function, under the different acceleration environment of research, by-pass diode
Test needs the positive and negative bias-voltage that duration (accelerated ageing time) applies with test temperature, two ends
Between relation, study diode characteristics parameter Changing Pattern under the conditions of different chamber's build-in test, and and room
Outer practical operation situation compares, and determines under three kinds of typical by-pass diode working conditions, and diode is indoor
Cycle reasonable time of accelerated test and intensity.More close finally by the analysis of experimental result is made one
The reliability assessment of the bypass diode of reason.
The present invention, by environmental cabinet and bipolar power supply being combined, simulates three kinds of bypass diodes in typical case
Working condition, by the analysis of experimental result being set up the reliability of a relatively reasonable bypass diode
Evaluation system, makes up domestic deficiency in terms of bypass diode reliability assessment, for enterprise according to extraneous ring
Border selects suitable bypass diode to provide foundation, reduces what photovoltaic module was caused because of non-uniform irradiation
Loss.
The above is only the preferred embodiment of the present invention, it is noted that common for the art
For technical staff, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and change
Shape, these improve and deformation also should be regarded as protection scope of the present invention.
Claims (4)
1. a photovoltaic by-pass diode reliability estimation method, is characterized in that, performs according to following steps:
1) simulated assembly monolithic battery is by the situation of shade static barriers, and environmental cabinet temperature is adjusted to analog temperature, double
Pole power supply applies positive bias-voltage, makes by-pass diode start working under forward current, waits by-pass diode
Lost efficacy, recorded the temperature of by-pass diode and the time of test；
2) there are shade, unblanketed alternating senses in the simulation short time, environmental cabinet temperature is adjusted to analog temperature, double
Pole power supply is pressed certain frequency and is switched positive bias-voltage and reversed bias voltage, constantly impacts by-pass diode, waits bypass
Diode fails, records temperature and the testing time of by-pass diode；
3) there is not the situation of mismatch in simulated assembly, and environmental cabinet is adjusted to analog temperature, and bipolar power supply applies reversed bias voltage,
Wait by-pass diode lost efficacy, and recorded the temperature of by-pass diode and the time of test；
4) research by-pass diode characteristic performance parameter Changing Pattern under the conditions of different chamber's build-in test, and real with outdoor
Border ruuning situation com-parison and analysis, determines that above three step reliability testings need duration and environmental cabinet temperature
Parameter, direct current power source voltage, the relation of current parameters.
A kind of photovoltaic by-pass diode reliability estimation method the most according to claim 1, is characterized in that,
In step 1) in, described analog temperature is 70 DEG C-80 DEG C.
A kind of photovoltaic by-pass diode reliability estimation method the most according to claim 1, is characterized in that,
In step 2) in, described analog temperature is 70 DEG C-80 DEG C.
A kind of photovoltaic by-pass diode reliability estimation method the most according to claim 1, is characterized in that,
In step 3) in, described analog temperature is 70 DEG C-80 DEG C.
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| CN201410275894.5A CN104052399B (en) | 2014-06-20 | 2014-06-20 | Method for estimating reliability of photovoltaic bypass diode |
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| CN201410275894.5A CN104052399B (en) | 2014-06-20 | 2014-06-20 | Method for estimating reliability of photovoltaic bypass diode |
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| CN105978483B (en) * | 2015-11-27 | 2018-05-25 | 国网冀北电力有限公司电力科学研究院 | Photovoltaic combiner box and its counnter attack diode installing analysis method, apparatus |
| CN105403799B (en) * | 2015-12-25 | 2018-06-26 | 工业和信息化部电子第五研究所 | Electrostatic transducer analysis method for reliability and system |
| CN108090315A (en) * | 2018-02-27 | 2018-05-29 | 南昌航空大学 | The analogy method of photovoltaic module Current Voltage output characteristic under the conditions of a kind of local shading |
| CN108333495B (en) * | 2018-03-01 | 2020-11-03 | 国家电投集团西安太阳能电力有限公司 | Method for detecting working state of bypass diode of photovoltaic module junction box |
| CN108802592A (en) * | 2018-08-24 | 2018-11-13 | 无锡市产品质量监督检验院 | A kind of bypass diode test device and test method |
| CN110311626B (en) * | 2019-07-04 | 2021-03-05 | 河海大学常州校区 | Method for calculating current of double-sided photovoltaic module under mismatch condition |
| CN115015607A (en) * | 2022-06-02 | 2022-09-06 | 英利能源发展有限公司 | Manufacturing method of split junction box test sample and test method of photovoltaic module |
| CN114859204A (en) * | 2022-07-06 | 2022-08-05 | 江苏泽润新材料有限公司 | Photovoltaic junction box live-action simulation evaluation mode and testing device |
| CN115864994B (en) * | 2023-02-08 | 2023-05-23 | 山东奥客隆太阳能科技有限公司 | Reliability evaluation method and system for photovoltaic module testing device |
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| CN201622322U (en) * | 2010-02-02 | 2010-11-03 | 陕西科技大学 | Comprehensive testing device for OLED photoelectric properties |
| CN101958665B (en) * | 2010-08-23 | 2012-07-18 | 吕纪坤 | Monitoring method of junction box for photovoltaic module |
| CN201945667U (en) * | 2011-03-02 | 2011-08-24 | 常州天合光能有限公司 | Internal electrical continuity monitoring system for solar assemblies |
| JP5759911B2 (en) * | 2012-01-30 | 2015-08-05 | Ｊｘ日鉱日石エネルギー株式会社 | Solar cell unit and solar cell module |
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