CN104051596B - 一种led玻璃支架的制备方法 - Google Patents
一种led玻璃支架的制备方法 Download PDFInfo
- Publication number
- CN104051596B CN104051596B CN201410226333.6A CN201410226333A CN104051596B CN 104051596 B CN104051596 B CN 104051596B CN 201410226333 A CN201410226333 A CN 201410226333A CN 104051596 B CN104051596 B CN 104051596B
- Authority
- CN
- China
- Prior art keywords
- glass
- led
- layer
- original sheet
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011521 glass Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 22
- 239000005357 flat glass Substances 0.000 claims description 19
- 229910021389 graphene Inorganic materials 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 238000003698 laser cutting Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000005342 ion exchange Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
本发明公开了一种LED玻璃支架的制备方法,此LED玻璃支架的制备方法在玻璃基板的两侧面分别设置导热性能良好的石墨烯层和耐高温的物质层,玻璃基板可方便LED芯片工作时的发光角度达到360度,石墨烯层和耐高温物质层可有效增强LED玻璃支架的导热性能,从而使得LED玻璃支架能承受更大的电压和电流,提高其安全稳定性能,且无需进行二次配光,从而有效降低其制作成本,此发明用于LED制备领域。
Description
技术领域
本发明涉及一种LED支架领域,特别是涉及一种LED玻璃支架及其制备方法。
背景技术
传统LED支架一般是用铜、铁、铝或者陶瓷作为基板制作,后续经过烧结、冲压、切割、电镀、注塑等一系列工艺制成。
LED芯片正常工作时,发光角度需要为360度,传统支架为非透明支架,光线无法穿过支架,导致传统支架封装的LED光源发光角度一般不会超过180度,为了达到360度发光要求,需要进行二次配光,而二次配光需要专业光学设计,专业光学透镜,成本高。
而现有的LED玻璃支架的电极一般采用低温固化制作工艺,电极与玻璃附着力不好,容易刮花脱落,同时焊接性能极差,焊锡的焊接温度一般在250℃左右,旧玻璃支架用焊锡在电极上焊接导电体材料时极容易将电板整体焊落,导致支架报废。还有旧玻璃支架在封装时,在电极上键合金属导线的拉力也偏小。
发明内容
为解决上述问题,本发明提供一种性能更稳定且制作成本更低的LED玻璃支架的制备方法。
本发明解决其技术问题所采用的技术方案是:
一种LED玻璃支架,包括玻璃基板和分别设置于玻璃基板两侧面的石墨烯层和耐高温物质层,耐高温物质层上设有电极层。
进一步作为本发明技术方案的改进,玻璃基板为经过表面钢化处理的钙钠玻璃,玻璃基板的厚度为0.2~0.7mm,玻璃基板的表面平整度为±0.01mm。
一种上述LED玻璃支架的方法,其特征在于,包括以下步骤:
1)、将钙钠玻璃的玻璃原片进行清洗烘干后,将玻璃原片预热到350℃,经过恒温30分钟后,将玻璃原片放入400℃的碱性溶液中放置2~10小时,取出玻璃原片,放置于400℃退火炉中退火至室温形成玻璃基板;
2)、在玻璃基板的一个侧面通过溅镀或者印刷或者喷涂工艺,涂覆石墨烯层;
3)、在玻璃基板的另一个侧面通过溅镀或者离子交换或者气相沉积工艺,涂覆耐高温物质层;
4)、在耐高温物质层上通过丝印或者钢网漏印工艺涂覆电极层,并在150~800℃环境下经过3~20分钟形成电极层;
5)、对电极层进行研磨抛光处理,控制电极层的表面平整度为±0.01mm。
进一步作为本发明技术方案的改进,耐高温物质层为二氧化硅层,耐高温物质层的厚度为1μm~1000μm。
进一步作为本发明技术方案的改进,石墨烯层的厚度为1μm~1000μm。
进一步作为本发明技术方案的改进,电极层的厚度为5μm~1000μm。
进一步作为本发明技术方案的改进,步骤1)~5)在一能裁剪为多个单元的玻璃基板的玻璃原片上完成,步骤1)~5)完成后,对玻璃原片通过刀片切割或者激光裁切形成多个单元的LED玻璃支架。
本发明的有益效果:此LED玻璃支架的制备方法在玻璃基板的两侧面分别设置导热性能良好的石墨烯层和耐高温的物质层,玻璃基板可方便LED芯片工作时的发光角度达到360度,石墨烯层和耐高温物质层可有效增强LED玻璃支架的导热性能,从而使得LED玻璃支架能承受更大的电压和电流,提高其安全稳定性能,且无需进行二次配光,从而有效降低其制作成本。
附图说明
下面结合附图对本发明作进一步说明:
图1是本发明实施例中单元LED玻璃支架侧面结构示意图;
图2是本发明实施例中单元LED玻璃支架结构主视图;
图3是本发明实施例中单元LED玻璃支架大批量制作切割前玻璃原片上单元支架排布结构示意图。
具体实施方式
参照图1~图3,本发明为一种LED玻璃支架的制备方法,LED玻璃支架包括玻璃基板1和分别设置于玻璃基板1两侧面的石墨烯层2和耐高温物质层3,耐高温物质层3上设有电极层4。
一种上述LED玻璃支架的制备方法,包括以下步骤:
1)、将钙钠玻璃的玻璃原片进行清洗烘干后,将玻璃原片预热到350℃,经过恒温30分钟后,将玻璃原片放入400℃的含钾离子的碱性溶液中放置2~10小时,取出玻璃原片,放置于400℃退火炉中退火至室温形成玻璃基板1;
2)、在玻璃基板1的一个侧面通过溅镀或者印刷或者喷涂工艺,涂覆石墨烯层2;
3)、在玻璃基板1的另一个侧面通过溅镀或者离子交换或者气相沉积工艺,涂覆耐高温物质层3;
4)、在耐高温物质层3上通过丝印或者钢网漏印工艺涂覆电极层4,并在150~800℃环境下经过3~20分钟形成电极层4;
5)、对电极层4进行研磨抛光处理,控制电极层4的表面平整度为±0.01mm。
此LED玻璃支架的制备方法在玻璃基板的两侧面分别设置导热性能良好的石墨烯层和耐高温的物质层,玻璃基板可方便LED芯片工作时的发光角度达到360度,石墨烯层和耐高温物质层可有效增强LED玻璃支架的导热性能,从而使得LED玻璃支架能承受更大的电压和电流,提高其安全稳定性能,且无需进行二次配光,从而有效降低其制作成本。
作为本发明优选的实施方式,玻璃基板1为经过表面钢化处理的钙钠玻璃,玻璃基板1的厚度为0.2~0.7mm,玻璃基板1的表面平整度为±0.01mm。
此LED玻璃支架选用0.5mm厚度的玻璃原片,最终形成单元LED玻璃支架的玻璃原片为110mm*88.13mm的长方形。
作为本发明优选的实施方式,耐高温物质层3为二氧化硅层,耐高温物质层3的厚度为1μm~1000μm。
作为本发明优选的实施方式,石墨烯层2的厚度为1μm~1000μm。
作为本发明优选的实施方式,电极层4的厚度为5μm~1000μm。
电极层4的成分为银或者银包铜或者金或者银和玻璃粉等材料制成的银浆、或者银和树脂等材料制成银胶等等。
作为本发明优选的实施方式,步骤1)~5)在一能裁剪为多个单元的玻璃基板1的玻璃原片上完成,步骤1)~5)完成后,对玻璃原片通过刀片切割或者激光裁切形成多个单元的LED玻璃支架。
为了达到规模效益,提高生产效率,降低生产成本,在单片的大玻璃上制造N*N个单元的玻璃支架,然后通过刀片切割或者激光裁切,得到各单元LED玻璃支架。
以往的LED玻璃支架价格昂贵,散热导热性能差,易碎,加入玻璃表面处理后,新LED玻璃支架兼顾更好的导热耐压性能,廉价环保,有利于降低LED行业制造成本,大规模生产应用,同时提升绿色照明形象。
当然,本发明创造并不局限于上述实施方式,熟悉本领域的技术人员在不违背本发明精神的前提下还可作出等同变形或替换,这些等同的变型或替换均包含在本申请权利要求所限定的范围内。
Claims (5)
1.一种LED玻璃支架的制备方法,其特征在于,包括以下步骤:
1)、将钙钠玻璃的玻璃原片进行清洗烘干后,将玻璃原片预热到350℃,经过恒温30分钟后,将玻璃原片放入400℃的碱性溶液中放置2~10小时,取出玻璃原片,放置于400℃退火炉中退火至室温形成玻璃基板(1);
2)、在所述玻璃基板(1)的一个侧面通过溅镀或者印刷或者喷涂工艺,涂覆石墨烯层(2);
3)、在所述玻璃基板(1)的另一个侧面通过溅镀或者离子交换或者气相沉积工艺,涂覆耐高温物质层(3);
4)、在所述耐高温物质层(3)上通过丝印或者钢网漏印工艺涂覆电极层(4),并在150~800℃环境下经过3~20分钟形成电极层(4);
5)、对电极层(4)进行研磨抛光处理,控制电极层(4)的表面平整度为±0.01mm。
2.根据权利要求1所述的LED玻璃支架的制备方法,其特征在于:所述耐高温物质层(3)为二氧化硅层,所述耐高温物质层(3)的厚度为1μm~1000μm。
3.根据权利要求1所述的LED玻璃支架的制备方法,其特征在于:所述石墨烯层(2)的厚度为1μm~1000μm。
4.根据权利要求1所述的LED玻璃支架的制备方法,其特征在于:所述电极层(4)的厚度为5μm~1000μm。
5.根据权利要求1所述的LED玻璃支架的制备方法,其特征在于:所述步骤1)~5)在一能裁剪为多个单元的玻璃基板(1)的玻璃原片上完成,所述步骤1)~5)完成后,对玻璃原片通过刀片切割或者激光裁切形成多个单元的LED玻璃支架。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410226333.6A CN104051596B (zh) | 2014-05-26 | 2014-05-26 | 一种led玻璃支架的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410226333.6A CN104051596B (zh) | 2014-05-26 | 2014-05-26 | 一种led玻璃支架的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104051596A CN104051596A (zh) | 2014-09-17 |
CN104051596B true CN104051596B (zh) | 2017-01-18 |
Family
ID=51504202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410226333.6A Active CN104051596B (zh) | 2014-05-26 | 2014-05-26 | 一种led玻璃支架的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104051596B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107394026A (zh) * | 2016-05-17 | 2017-11-24 | 湖南国盛石墨科技有限公司 | 一种具有石墨烯导热层的led灯 |
CN108281539A (zh) * | 2018-01-18 | 2018-07-13 | 深圳市光脉电子有限公司 | 一种基于石墨烯材质的柔性led发光结构及制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201904369U (zh) * | 2010-07-30 | 2011-07-20 | 晶科电子(广州)有限公司 | 一种基于硅基板的led表面贴片式封装结构 |
CN102412212A (zh) * | 2010-09-21 | 2012-04-11 | 王维汉 | 电子/光电组件的散热装置 |
KR20130134636A (ko) * | 2012-05-31 | 2013-12-10 | 한국과학기술원 | 그래핀 층과 그래핀 지지층을 포함하는 유기발광 장치 |
CN203910852U (zh) * | 2014-05-26 | 2014-10-29 | 广州市尤特新材料有限公司 | 一种led玻璃支架 |
-
2014
- 2014-05-26 CN CN201410226333.6A patent/CN104051596B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201904369U (zh) * | 2010-07-30 | 2011-07-20 | 晶科电子(广州)有限公司 | 一种基于硅基板的led表面贴片式封装结构 |
CN102412212A (zh) * | 2010-09-21 | 2012-04-11 | 王维汉 | 电子/光电组件的散热装置 |
KR20130134636A (ko) * | 2012-05-31 | 2013-12-10 | 한국과학기술원 | 그래핀 층과 그래핀 지지층을 포함하는 유기발광 장치 |
CN203910852U (zh) * | 2014-05-26 | 2014-10-29 | 广州市尤特新材料有限公司 | 一种led玻璃支架 |
Also Published As
Publication number | Publication date |
---|---|
CN104051596A (zh) | 2014-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3503209A1 (en) | Processing method for photovoltaic cell and string welding and curing device for photovoltaic cell | |
CN107078174B (zh) | 太阳能电池互连件 | |
WO2022143109A1 (zh) | 太阳能电池组件的封装方法、太阳能电池串的连接方法、太阳能电池组件及其制备方法 | |
CN103495784B (zh) | 一种格栅太阳电池片焊接治具及其焊接工艺 | |
CN104051596B (zh) | 一种led玻璃支架的制备方法 | |
JP2007273830A (ja) | 太陽電池装置の製造方法 | |
CN203910852U (zh) | 一种led玻璃支架 | |
CN103531646A (zh) | 方便焊带焊接的太阳能电池电极 | |
CN104576779A (zh) | 丝网阵列导电膜、太阳能电池及其制备方法 | |
CN106552990B (zh) | 一种贴片电位器的内部微焊接方法 | |
JP2017080753A (ja) | 超音波半田付け方法および超音波半田付け装置 | |
CN203484765U (zh) | 一种格栅太阳电池片焊接治具 | |
CN104633509B (zh) | 一种基于玻璃基板的led灯条及其生产工艺 | |
CN203812888U (zh) | 方便焊带焊接的太阳能电池电极 | |
CN104235663B (zh) | 一种led软灯条的生产工艺 | |
CN204054782U (zh) | 双面覆铜板 | |
CN106499975A (zh) | Led灯珠及其制造方法 | |
CN204403893U (zh) | 一种基于玻璃基板的led灯条 | |
CN105552136A (zh) | 一种光伏焊带的制造方法 | |
CN207233776U (zh) | 一种芯片倒装的大电流灯丝 | |
CN204069477U (zh) | 一种单面覆铜板 | |
CN204289517U (zh) | 一种陶瓷封装的led灯丝 | |
CN107546316B (zh) | 一种钢化透明导电玻璃基板及智能建筑玻璃的制备方法 | |
CN204204908U (zh) | 具硅基座的发光二极管及发光二极管灯具 | |
CN208240728U (zh) | 一种热电一体化的led封装结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Manufacturing method of LED glass support Effective date of registration: 20200320 Granted publication date: 20170118 Pledgee: China Co truction Bank Corp Guangzhou green finance reform and innovation pilot area Huadu Branch Pledgor: UV TECH MATERIAL Ltd. Registration number: Y2020980000908 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |