CN104022205A - 发光器件和制造发光器件的方法 - Google Patents
发光器件和制造发光器件的方法 Download PDFInfo
- Publication number
- CN104022205A CN104022205A CN201410136675.9A CN201410136675A CN104022205A CN 104022205 A CN104022205 A CN 104022205A CN 201410136675 A CN201410136675 A CN 201410136675A CN 104022205 A CN104022205 A CN 104022205A
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- Prior art keywords
- layer
- oxide
- semiconductor layer
- doped
- conductive semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0031906 | 2008-04-05 | ||
KR1020080031906A KR20090106299A (ko) | 2008-04-05 | 2008-04-05 | 오믹접촉 광추출 구조층을 구비한 그룹 3족 질화물계반도체 발광다이오드 소자 및 이의 제조 방법 |
CN200980116970.5A CN102047446B (zh) | 2008-04-05 | 2009-04-06 | 发光器件和制造发光器件的方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980116970.5A Division CN102047446B (zh) | 2008-04-05 | 2009-04-06 | 发光器件和制造发光器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104022205A true CN104022205A (zh) | 2014-09-03 |
CN104022205B CN104022205B (zh) | 2017-04-26 |
Family
ID=41377738
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980116970.5A Expired - Fee Related CN102047446B (zh) | 2008-04-05 | 2009-04-06 | 发光器件和制造发光器件的方法 |
CN201410136675.9A Active CN104022205B (zh) | 2008-04-05 | 2009-04-06 | 发光器件和制造发光器件的方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980116970.5A Expired - Fee Related CN102047446B (zh) | 2008-04-05 | 2009-04-06 | 发光器件和制造发光器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9406846B2 (zh) |
EP (1) | EP2264792B1 (zh) |
KR (1) | KR20090106299A (zh) |
CN (2) | CN102047446B (zh) |
WO (1) | WO2009145501A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507894A (zh) * | 2017-07-25 | 2017-12-22 | 厦门三安光电有限公司 | 一种发光二极管芯片结构及其制作方法 |
CN110088922A (zh) * | 2018-04-08 | 2019-08-02 | 厦门市三安光电科技有限公司 | 一种发光二极管芯片结构及其制作方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101735670B1 (ko) * | 2010-07-13 | 2017-05-15 | 엘지이노텍 주식회사 | 발광 소자 |
KR101767101B1 (ko) | 2011-05-23 | 2017-08-24 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102011114641B4 (de) | 2011-09-30 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
KR101744930B1 (ko) * | 2012-12-28 | 2017-06-09 | 서울바이오시스 주식회사 | 광 검출 소자 |
CN104347765A (zh) * | 2013-08-06 | 2015-02-11 | 上海蓝光科技有限公司 | 一种发光二极管及其制造方法 |
DE102015111573A1 (de) * | 2015-07-16 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102015112879A1 (de) | 2015-08-05 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
CN110383509B (zh) * | 2016-12-06 | 2022-12-13 | 苏州立琻半导体有限公司 | 发光器件 |
US10396248B2 (en) * | 2017-04-17 | 2019-08-27 | Lumens Co., Ltd. | Semiconductor light emitting diode |
CN112272870B (zh) * | 2020-03-19 | 2024-04-02 | 厦门三安光电有限公司 | 发光二极管 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200408140A (en) * | 2002-11-06 | 2004-05-16 | Super Nova Optoelectronics Corp | GaN-based Ⅲ-Ⅴ group compound semiconductor light-emitting diode and the manufacturing method thereof |
US20040169181A1 (en) * | 2002-06-26 | 2004-09-02 | Yoo Myung Cheol | Thin film light emitting diode |
KR20050013042A (ko) * | 2003-11-18 | 2005-02-02 | 주식회사 이츠웰 | 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법 |
US20050087884A1 (en) * | 2003-10-24 | 2005-04-28 | Stokes Edward B. | Flip-chip light emitting diode |
US20060027815A1 (en) * | 2004-08-04 | 2006-02-09 | Wierer Jonathan J Jr | Photonic crystal light emitting device with multiple lattices |
US20070257269A1 (en) * | 2006-05-08 | 2007-11-08 | Lg Electronics Inc. | Light emitting device and method for manufacturing the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11251685A (ja) | 1998-03-05 | 1999-09-17 | Toshiba Corp | 半導体レーザ |
US6683325B2 (en) * | 1999-01-26 | 2004-01-27 | Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH | Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture |
US20020117672A1 (en) | 2001-02-23 | 2002-08-29 | Ming-Sung Chu | High-brightness blue-light emitting crystalline structure |
US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
KR101127314B1 (ko) * | 2003-11-19 | 2012-03-29 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체소자 |
US7250635B2 (en) * | 2004-02-06 | 2007-07-31 | Dicon Fiberoptics, Inc. | Light emitting system with high extraction efficency |
US7385226B2 (en) * | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
TW200419832A (en) * | 2004-04-16 | 2004-10-01 | Uni Light Technology Inc | Structure for increasing the light-emitting efficiency of a light-emitting device |
WO2006038665A1 (ja) | 2004-10-01 | 2006-04-13 | Mitsubishi Cable Industries, Ltd. | 窒化物半導体発光素子およびその製造方法 |
KR100580751B1 (ko) * | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
KR100708936B1 (ko) * | 2005-10-17 | 2007-04-17 | 삼성전기주식회사 | 플립칩용 질화물계 반도체 발광소자 |
JP4954549B2 (ja) | 2005-12-29 | 2012-06-20 | ローム株式会社 | 半導体発光素子およびその製法 |
JP5068475B2 (ja) | 2006-04-24 | 2012-11-07 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法及び窒化ガリウム系化合物半導体発光素子、並びにランプ |
KR101263934B1 (ko) * | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | 발광다이오드 및 그의 제조방법 |
US7703945B2 (en) * | 2006-06-27 | 2010-04-27 | Cree, Inc. | Efficient emitting LED package and method for efficiently emitting light |
JP4172515B2 (ja) * | 2006-10-18 | 2008-10-29 | ソニー株式会社 | 発光素子の製造方法 |
-
2008
- 2008-04-05 KR KR1020080031906A patent/KR20090106299A/ko active Search and Examination
-
2009
- 2009-04-06 WO PCT/KR2009/001763 patent/WO2009145501A2/ko active Application Filing
- 2009-04-06 CN CN200980116970.5A patent/CN102047446B/zh not_active Expired - Fee Related
- 2009-04-06 EP EP09754966.1A patent/EP2264792B1/en active Active
- 2009-04-06 US US12/936,292 patent/US9406846B2/en active Active
- 2009-04-06 CN CN201410136675.9A patent/CN104022205B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040169181A1 (en) * | 2002-06-26 | 2004-09-02 | Yoo Myung Cheol | Thin film light emitting diode |
TW200408140A (en) * | 2002-11-06 | 2004-05-16 | Super Nova Optoelectronics Corp | GaN-based Ⅲ-Ⅴ group compound semiconductor light-emitting diode and the manufacturing method thereof |
US20050087884A1 (en) * | 2003-10-24 | 2005-04-28 | Stokes Edward B. | Flip-chip light emitting diode |
KR20050013042A (ko) * | 2003-11-18 | 2005-02-02 | 주식회사 이츠웰 | 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법 |
US20060027815A1 (en) * | 2004-08-04 | 2006-02-09 | Wierer Jonathan J Jr | Photonic crystal light emitting device with multiple lattices |
US20070257269A1 (en) * | 2006-05-08 | 2007-11-08 | Lg Electronics Inc. | Light emitting device and method for manufacturing the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507894A (zh) * | 2017-07-25 | 2017-12-22 | 厦门三安光电有限公司 | 一种发光二极管芯片结构及其制作方法 |
CN110088922A (zh) * | 2018-04-08 | 2019-08-02 | 厦门市三安光电科技有限公司 | 一种发光二极管芯片结构及其制作方法 |
CN110088922B (zh) * | 2018-04-08 | 2022-04-15 | 厦门市三安光电科技有限公司 | 一种发光二极管芯片结构及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2009145501A3 (ko) | 2010-02-18 |
CN102047446A (zh) | 2011-05-04 |
US20110140152A1 (en) | 2011-06-16 |
CN102047446B (zh) | 2014-05-07 |
KR20090106299A (ko) | 2009-10-08 |
EP2264792A2 (en) | 2010-12-22 |
EP2264792B1 (en) | 2018-05-30 |
US9406846B2 (en) | 2016-08-02 |
EP2264792A4 (en) | 2015-03-04 |
WO2009145501A2 (ko) | 2009-12-03 |
CN104022205B (zh) | 2017-04-26 |
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Legal Events
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170911 Address after: Seoul, South Kerean Patentee after: IG Innotek Co., Ltd. Address before: Seoul, South Kerean Patentee before: Song Junwu |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210818 Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Leyu Semiconductor Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG INNOTEK Co.,Ltd. |
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TR01 | Transfer of patent right |