CN104011568B - 反射镜的布置 - Google Patents

反射镜的布置 Download PDF

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Publication number
CN104011568B
CN104011568B CN201280064971.1A CN201280064971A CN104011568B CN 104011568 B CN104011568 B CN 104011568B CN 201280064971 A CN201280064971 A CN 201280064971A CN 104011568 B CN104011568 B CN 104011568B
Authority
CN
China
Prior art keywords
euv radiation
mirror
partially reflective
reflective surface
reflecting region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280064971.1A
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English (en)
Chinese (zh)
Other versions
CN104011568A (zh
Inventor
J.劳夫
H.费尔德曼
M.莱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN104011568A publication Critical patent/CN104011568A/zh
Application granted granted Critical
Publication of CN104011568B publication Critical patent/CN104011568B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
CN201280064971.1A 2011-11-15 2012-11-14 反射镜的布置 Expired - Fee Related CN104011568B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011086345.1 2011-11-15
DE102011086345A DE102011086345A1 (de) 2011-11-15 2011-11-15 Spiegel
PCT/EP2012/072637 WO2013072377A2 (de) 2011-11-15 2012-11-14 Anordnung eines spiegels

Publications (2)

Publication Number Publication Date
CN104011568A CN104011568A (zh) 2014-08-27
CN104011568B true CN104011568B (zh) 2017-09-26

Family

ID=47297145

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280064971.1A Expired - Fee Related CN104011568B (zh) 2011-11-15 2012-11-14 反射镜的布置

Country Status (5)

Country Link
US (1) US9658533B2 (enExample)
JP (1) JP6221160B2 (enExample)
CN (1) CN104011568B (enExample)
DE (1) DE102011086345A1 (enExample)
WO (1) WO2013072377A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041623A1 (de) * 2010-09-29 2012-03-29 Carl Zeiss Smt Gmbh Spiegel
DE102012216502A1 (de) 2012-09-17 2014-03-20 Carl Zeiss Smt Gmbh Spiegel
DE102013219583A1 (de) * 2013-09-27 2015-04-02 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102014204818A1 (de) 2014-03-14 2015-09-17 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102016205695A1 (de) 2015-04-09 2016-10-13 Carl Zeiss Smt Gmbh Maske für die Projektionslithographie
DE102015209175A1 (de) * 2015-05-20 2016-11-24 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel
DE102015216443A1 (de) 2015-08-27 2017-03-02 Carl Zeiss Smt Gmbh Anordnung einer Vorrichtung zum Schutz eines in einer Objektebene anzuordnenden Retikels gegen Verschmutzung
DE102018201169A1 (de) 2018-01-25 2018-03-29 Carl Zeiss Smt Gmbh Verfahren zur Beleuchtung eines Retikels in einer Projektionsbelichtungsanlage
DE102018201170A1 (de) 2018-01-25 2019-07-25 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Mikrolithographie
DE102018207107A1 (de) 2018-05-08 2018-06-28 Carl Zeiss Smt Gmbh Spiegel
DE102021113780B9 (de) 2021-05-27 2024-08-01 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
DE102022100591B9 (de) * 2022-01-12 2023-10-26 Carl Zeiss Smt Gmbh Optisches System, insbesondere zur Charakterisierung einer Maske für die Mikrolithographie, und Strahlteiler zur Verwendung in einem solchen optischen System

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10205425A1 (de) * 2001-11-09 2003-05-22 Zeiss Carl Smt Ag Facettenspiegel mit mehreren Spiegelfacetten
WO2004057400A1 (de) * 2002-12-21 2004-07-08 Carl Zeiss Smt Ag Projektionsoptik für die lithographie und spiegel für eine solche
US20040218289A1 (en) * 2003-02-13 2004-11-04 Yoshiki Kino Mirror holding mechanism in exposure apparatus, and device manufacturing method

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US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10329141B4 (de) * 2003-06-27 2008-10-23 Carl Zeiss Smt Ag Faltungsgeometrien für EUV-Beleuchtungssysteme
DE10136507A1 (de) 2001-07-17 2003-04-03 Zeiss Carl Geometrischer Strahlteiler und Verfahren zu seiner Herstellung
JP4387198B2 (ja) 2002-02-09 2009-12-16 カール・ツァイス・エスエムティー・アーゲー 多数の鏡面を有する面鏡
US7246909B2 (en) * 2003-01-24 2007-07-24 Carl Zeiss Smt Ag Method for the production of a facetted mirror
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006014380A1 (de) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
DE102007034447A1 (de) * 2006-07-20 2008-01-24 Carl Zeiss Smt Ag Kollektor für ein Beleuchtungssystem
DE102006056035A1 (de) 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
CN101836163B (zh) 2007-08-20 2012-06-27 卡尔蔡司Smt有限责任公司 包括具有反射涂层的镜元件的投射物镜
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
JP5355699B2 (ja) 2008-10-20 2013-11-27 カール・ツァイス・エスエムティー・ゲーエムベーハー 放射線ビームを案内するための光学モジュール
DE102009034502A1 (de) 2009-07-24 2011-01-27 Carl Zeiss Smt Ag Optische Baugruppe zur Führung eines EUV-Strahlungsbündels
DE102008054844B4 (de) * 2008-12-17 2010-09-23 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographisches Projektionsbelichtungsverfahren
DE102009014701A1 (de) 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Optische Baugruppe
JP5767221B2 (ja) * 2009-08-07 2015-08-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 少なくとも２つの鏡面を有するミラーを製造する方法、マイクロリソグラフィ用投影露光装置のミラー、及び投影露光装置
DE102009054888A1 (de) * 2009-12-17 2011-06-22 Carl Zeiss SMT GmbH, 73447 Optisches Element mit einer Mehrzahl von refletiven Facettenelementen
DE102010001336B3 (de) 2010-01-28 2011-07-28 Carl Zeiss SMT GmbH, 73447 Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems
JP5727005B2 (ja) 2010-07-01 2015-06-03 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学系及びマルチファセットミラー
DE102010041623A1 (de) * 2010-09-29 2012-03-29 Carl Zeiss Smt Gmbh Spiegel
DE102012216502A1 (de) * 2012-09-17 2014-03-20 Carl Zeiss Smt Gmbh Spiegel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10205425A1 (de) * 2001-11-09 2003-05-22 Zeiss Carl Smt Ag Facettenspiegel mit mehreren Spiegelfacetten
WO2004057400A1 (de) * 2002-12-21 2004-07-08 Carl Zeiss Smt Ag Projektionsoptik für die lithographie und spiegel für eine solche
US20040218289A1 (en) * 2003-02-13 2004-11-04 Yoshiki Kino Mirror holding mechanism in exposure apparatus, and device manufacturing method

Also Published As

Publication number Publication date
JP6221160B2 (ja) 2017-11-01
US9658533B2 (en) 2017-05-23
US20140240686A1 (en) 2014-08-28
WO2013072377A3 (de) 2013-08-22
DE102011086345A1 (de) 2013-05-16
WO2013072377A2 (de) 2013-05-23
JP2014534643A (ja) 2014-12-18
CN104011568A (zh) 2014-08-27

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Granted publication date: 20170926