CN104009047A - Laser photovoltaic battery of upside-down mounting structure, and manufacturing method thereof - Google Patents
Laser photovoltaic battery of upside-down mounting structure, and manufacturing method thereof Download PDFInfo
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- CN104009047A CN104009047A CN201310060832.8A CN201310060832A CN104009047A CN 104009047 A CN104009047 A CN 104009047A CN 201310060832 A CN201310060832 A CN 201310060832A CN 104009047 A CN104009047 A CN 104009047A
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- inverted structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a laser photovoltaic battery of an upside-down mounting structure. The photovoltaic battery comprises a second insulation substrate and an epitaxial layer disposed on the second insulation substrate. The epitaxial layer comprises a positive electrode, a P-type conductive layer, a P/N junction battery, an N-type window layer and an N-type contact layer which are successively formed on the second insulation substrate. The invention further discloses a manufacturing method for the laser photovoltaic battery of the upside-down mounting structure. The laser battery provided by the invention greatly reduces series resistance, improves the heat dissipation performance of the battery, and accordingly enhances the conversion efficiency of the photovoltaic battery. A stripped first substrate can be repeatedly used, thus the cost is reduced.
Description
Technical field
The invention belongs to photovoltaic cell field, relate in particular to laser photovoltaic cell of a kind of inverted structure and preparation method thereof.
Background technology
Laser energy supplying system is the energy delivery system of an innovation, relies on this system, and the light that LASER Light Source is sent is transported on laser photovoltaic cell by optical fiber, and stable power supply output can be provided.By optical fiber transmission leaded light, be converted into electricity and have more advantage than traditional metal wire and coaxial cable power transmission technology, can be applied in and need to eliminate electromagnetic interference and maybe need, by the situation of electronic device and surrounding environment isolation, in directions such as radio communication, industrial sensor, national defence, aviation, medicine, the energy, have important application.Operation principle and the solar cell of laser photovoltaic cell are similar, just can obtain higher conversion efficiency, and larger output voltage can transmit more energy, and light source adopts the laser of the 790 nm-850 nm wavelength that are applicable to Optical Fiber Transmission.
GaAs PN junction battery can be for the laser energy of 808 nm is converted to electric energy, and as the laser battery in laser energy supplying system, but to only have be 1 V to the open circuit voltage of GaAs battery, can not be directly used in the power supply in electronic device circuit.Early stage laser photovoltaic cell is that GaAs PN junction battery is grown on Semi-insulating GaAs substrate, mode by etching isolated groove is isolated the battery chip of unit are, by the mode going between, several single junction cell units in series being obtained to high voltage again exports, after series connection, series resistance will be one of topmost factor affecting battery performance.Series resistance is mainly comprised of sheet resistance, positive and negative electrode contact resistance, the positive and negative electrode metallic object resistance of epitaxial loayer.The sheet resistance of epitaxial loayer is the topmost part in battery series resistance, mainly by growth technique, is determined; Electrodes and electrode metal volume resistance are mainly determined by device preparation technology and electrode structural designs.Because resistance is directly proportional and is inversely proportional to sectional area to length, the distance resistance that electric current passes through is larger, and photo-generated carrier transmission range is long, causes sheet resistance large, and series resistance strengthens, and will reduce the performance of battery.Adopted the conductive layer of growing on SI-substrate, and the mode of etching window has increased series resistance greatly in the past.
In view of this, be necessary to provide a kind of novel laser photovoltaic cell.
Summary of the invention
The object of the invention is to for deficiency of the prior art, laser photovoltaic cell of a kind of inverted structure and preparation method thereof is provided, greatly reduce series resistance, improved the heat dispersion of battery, thereby improve the conversion efficiency of photovoltaic cell, the first substrate peeling off can reuse, and has reduced cost.
For achieving the above object, the invention provides following technical scheme:
The application discloses a kind of laser photovoltaic cell of inverted structure, described photovoltaic cell comprises the second dielectric substrate and is positioned at the epitaxial loayer in described the second dielectric substrate, and described epitaxial loayer comprises positive electrode, P-type conduction layer, P/N junction battery, N-type Window layer and the N-type contact layer being formed at successively in described the second dielectric substrate.
As a further improvement on the present invention, also comprise the barrier layer between described P-type conduction layer and P/N junction battery.
Preferably, described barrier layer is the AlGaAs ((Al) GaInP) of P type, and AlGaAs ((Al) GaInP) refers to AlGaAs (GaInP) or AlGaAs (AlGaInP).
As a further improvement on the present invention, described P-type conduction layer and the material of N-type contact layer are GaAs, and described P/N junction battery is GaAs battery.
As a further improvement on the present invention, the material of described N-type Window layer is Al
xga
1-xas (1 > x>=0.2) or Ga
0.51in
0.49p.
As a further improvement on the present invention, also comprise isolation channel, described isolation channel is separated into a plurality of battery units by described photovoltaic cell, between battery unit, is connected in series, and described isolation channel runs through respectively described N-type contact layer, N-type Window layer, P/N junction battery, P-type conduction layer and positive electrode.
As a further improvement on the present invention, also comprise negative electrode, described negative electrode is formed on described contact layer.
The manufacture method that disclosed herein as well is a kind of laser photovoltaic cell of inverted structure, comprising:
(1) at the first Grown as the sacrifice layer of peeling off the first substrate;
(2) on above-mentioned sacrifice layer, grow N-type contact layer as ohmic contact, and be used as the cutoff layer of selective corrosion sacrifice layer;
(3) the N-type Window layer of growing on above-mentioned contact layer;
(4) grow successively in above-mentioned N-type Window layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(5) growing P-type barrier layer on above-mentioned P/N junction battery;
(6) growing P-type conductive layer on above-mentioned barrier layer;
(7) on P-type conduction layer, prepare positive electrode, and annealing forms ohmic contact;
(8) utilize bonding technology between positive electrode surface and the second insulated substrate surface, to prepare bonding/adhesion arrangement layer, by bonding mode/bonding mode, be attached to together;
(9) by the mode of wet etching, remove sacrifice layer, the first substrate is peeled off, be formed on the photovoltaic cell matrix of inverted structure in the second dielectric substrate;
(10) according to battery standard technique, on the photovoltaic cell matrix being formed by abovementioned steps, prepare isolation channel, negative electrode, antireflection layer and contact conductor, obtain target product.
As a further improvement on the present invention, described conductive layer is P type doping content 1 * 10
18cm
-3above GaAs conductive layer; Described barrier layer is doping content 1 * 10
18cm
-3above P type AlGaAs ((Al) GaInP) barrier layer; Described N-type Window layer is that doping content is 1 * 10
18cm
-3above Window layer; Described N-type contact layer is that doping content is 2 * 10
18cm
-3above GaAs contact layer.
As a further improvement on the present invention, in described step (10), successively etching N type contact layer, N-type Window layer, P/N junction battery, P type barrier layer, P-type conduction layer and positive electrode until expose the second dielectric substrate or partial etching the second dielectric substrate to form isolation channel.
As a further improvement on the present invention, in described step (10), etching N type contact layer, N-type Window layer, P/N junction battery, P type barrier layer and P-type conduction layer until expose positive electrode to form positive electrode window, are prepared negative electrode on N-type contact layer successively.Negative electrode by electron beam evaporation, thermal evaporation or magnetron sputtering, on N-type contact layer, deposits one or more layers metal and annealing formation ohmic contact is made.Positive and negative electrode is realized the series connection of each element cell in photovoltaic cell by the mode of metal pressure-welding or evaporation metal.
As a further improvement on the present invention, be also formed with antireflective coating in Window layer, antireflective coating is ZnSe/MgF or the TiO preparing by chemical vapor deposition techniques or coating machine
2/ SiO
2antireflective coating.
As a kind of available execution mode, each layer in this photovoltaic cell is to adopt MOCVD or the growth of MBE method to form, and wherein the N-type foreign atom of MOCVD is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C; The N-type foreign atom of MBE is Si, Se, S or Te, and P type foreign atom is Be, Mg or C.
Compared with prior art, the invention has the advantages that:
1. the inverted structure photovoltaic cell of the present invention's design is by there being several units in series can produce the output voltage up to the three ten-day period of hot season.
2. the novel inverted structure of the present invention's design, effectively to reduce series resistance, has improved the heat dispersion of battery, improves greatly the performance of device.
3. the first substrate peeling off can reuse, and greatly reduces cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the application, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Figure 1 shows that the structural representation of matrix of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention;
Figure 2 shows that the matrix bonding of laser photovoltaic cell of inverted structure in the specific embodiment of the invention and the schematic diagram that the first substrate is peeled off;
Figure 3 shows that the schematic diagram of isolation channel of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention;
Figure 4 shows that the cutaway view of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention;
Figure 5 shows that the vertical view of the laser photovoltaic cell of inverted structure in the specific embodiment of the invention.
Embodiment
Consider many deficiencies of the prior art, how to improve parallel resistance, reduce series resistance, increase the conversion efficiency of laser battery, and solve corresponding production technology and be significant.
The embodiment of the present application discloses a kind of laser photovoltaic cell of inverted structure, described photovoltaic cell comprises the second dielectric substrate and is positioned at the epitaxial loayer in described the second dielectric substrate, and described epitaxial loayer comprises positive electrode, P-type conduction layer, P/N junction battery, N-type Window layer and the N-type contact layer being formed at successively in described the second dielectric substrate.
Correspondingly, disclosed herein as well is a kind of manufacture method of laser photovoltaic cell of inverted structure, comprising:
(1) at the first Grown as the sacrifice layer of peeling off the first substrate;
(2) on above-mentioned sacrifice layer, grow N-type contact layer as ohmic contact, and be used as the cutoff layer of selective corrosion sacrifice layer;
(3) the N-type Window layer of growing on above-mentioned contact layer;
(4) grow successively in above-mentioned N-type Window layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(5) growing P-type barrier layer on above-mentioned P/N junction battery;
(6) growing P-type conductive layer on above-mentioned barrier layer;
(7) on P-type conduction layer, prepare positive electrode, and annealing forms ohmic contact;
(8) utilize bonding technology between positive electrode surface and the second insulated substrate surface, to prepare bonding/adhesion arrangement layer, by bonding mode/bonding mode, be attached to together;
(9) by the mode of wet etching, remove sacrifice layer, the first substrate is peeled off, be formed on the laser photovoltaic cell of inverted structure in the second dielectric substrate;
(10) according to battery standard technique, on the photovoltaic cell matrix being formed by abovementioned steps, prepare isolation channel, negative electrode, antireflection layer and contact conductor, obtain target product.
Preferably, in abovementioned steps (7), be to adopt to prepare positive electrode on GaAs conductive layer, and annealing form ohmic contact, the metal ohmic contact that wherein positive electricity is the very necessary column electrode thickening of going forward side by side; In abovementioned steps (9), be to remove sacrifice layer by the mode of wet etching, the first substrate is peeled off, the selective corrosion liquid adopting only corrodes AlAs sacrifice layer, and battery other materials structure is not corroded; After N-type contact layer forms aforementioned positive electrode, also the contact layer not being distributed under this metal electrode is removed; The ZnSe/MgF that aforementioned antireflection layer is prepared by chemical vapor deposition techniques or coating machine or TiO
2/ SiO
2antireflective coating.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
Consult Fig. 1-5, the manufacture craft of the GaAs laser photovoltaic battery preparation method of inverted structure comprises the following steps:
1, adopt a GaAs substrate 01, thickness is 200 to 500 microns of left and right, as substrate growth GaAs laser photovoltaic cell structure material;
2, enter MOCVD HuoMBE growth room, the AlAs sacrifice layer 02 of one deck 5-100nm that first grows;
3, in the doping content 1 * 10 of AlAs sacrifice layer 02 growth 100-300 nm
18cm
-3the GaAs contact layer 03 of above N-type, and as the cutoff layer that corrodes sacrifice layer;
4, grow on GaAs contact layer 03 doping content 1 * 10 of 1000-3000 nm
18cm
-3the Al of above N-type
xga
1-xas (1 > x>=0.2) or Ga
0.51in
0.49p Window layer 04;
5, grow in the Window layer 04 N-type doping content of 2500-3500 nm is 1 * 10
17-4 * 10
18cm
-3gaAs absorbed layer 05, as the base of GaAs solar cell, the doping content of the P type of regrowth 100-600 nm is 5 * 10
16-1 * 10
18cm
-3gaAs absorbed layer 06, as the emitter region of GaAs solar cell, form a PN junction battery 09;
6, grow doping concentration 1 * 10 on PN junction battery 09
18cm
-3above P type AlGaAs ((Al) GaInP) barrier layer 07, and as the back surface field layer of GaAs battery;
7, grow on the barrier layer 07 P type GaAs conductive layer 08 of one deck 1000-5000 nm, doping content is up to 1 * 10
18-1 * 10
19cm
-3;
8, by modes such as electron beam evaporation, thermal evaporation or magnetron sputterings, on GaAs conductive layer 08, prepare Pd/Zn/Pd/Au=5/10/20/200 nm, the positive electrode 11 of Ag=1 μ m and Au=100 nm metal materials forms ohmic contact, and it is carried out to the metal electrode thickening of Au=200-1000 nm;
9, utilize bonding technology to prepare bonding/adhesion arrangement layer between positive electrode 11 surfaces and the second dielectric substrate 12 surfaces, by bonding mode/bonding mode, be attached to together, the second dielectric substrate 12 is preferably ceramic substrate or insulation PI substrate;
10, by the mode of wet etching, remove sacrifice layer 02, the first substrate 01 is peeled off, form the laser photovoltaic cell of inverted structure in the second dielectric substrate 12, so far make photovoltaic cell matrix;
11, by wet method or dry method successively etching N type contact layer 03, N-type Window layer 04, P/N junction battery 09, P type barrier layer 07, P-type conduction layer 08, positive electrode 11 until expose or mode shape isolation channel 13 in photovoltaic cell matrix of partial etching the second dielectric substrate 12;
12, by dry method or wet etching successively etching N type contact layer 03, N-type Window layer 04, P/N junction battery 09, P type barrier layer 07, P-type conduction layer 08 until expose positive electrode 11 reinforcements, form positive electrode window;
13, on N-type contact layer 03, by modes such as electron beam evaporation, thermal evaporation or magnetron sputterings, prepare AuGe/Ni/Au=35/10/100 nm, the negative electrode 14 of Ag=1 μ m and Au=100 nm metal materials forms ohmic contact;
14, by wet etching by negative electrode 14 contact layer 03 beyond below remove;
15, by chemical vapor deposition techniques or coating machine, in N-type Window layer 04, prepare antireflection layer 15, application ZnSe/MgF or TiO
2/ SiO
2etc. reflection-reducing material, as Fig. 4;
16, prepare contact conductor 16, realize the series connection of each sub-battery, as Fig. 5.
Laser battery of the present invention connects to obtain required output voltage by several battery units, and wherein the open circuit voltage of GaAs battery is about 1 V, and each cell device has just the have an appointment output voltage (as 6 V) of several volts of several units in series like this.
The laser photovoltaic power brick of the application's inverted structure is drawn together the battery epitaxial loayer and the second dielectric substrate that are grown on a GaAs substrate and is carried out bonding chip, by wet etching AlAs sacrifice layer, the first substrate is peeled off, formed the laser photovoltaic cell structure of the inverted structure in the second dielectric substrate.The series resistance of this inverted structure photovoltaic cell is low, and output voltage is high, has improved the heat dispersion of battery, has improved the photoelectric conversion efficiency of battery, and the first substrate peeling off can reuse, and reduces costs, and can be used as the extensive use of efficient laser photovoltaic cell.
Be easy to expect, in other embodiments, laser photovoltaic cell also can be separated into by isolation channel the battery unit of any amount, and such as forming 2 battery units by one isolation channel, the isolation channel that 2 roads intersect forms 4 battery units etc.
It should be noted that, in this article, relational terms such as the first and second grades is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply and between these entities or operation, have the relation of any this reality or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby the process, method, article or the equipment that make to comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or be also included as the intrinsic key element of this process, method, article or equipment.The in the situation that of more restrictions not, the key element being limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
The above is only the application's embodiment; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the application's protection range.
Claims (11)
1. the laser photovoltaic cell of an inverted structure, it is characterized in that: described photovoltaic cell comprises the second dielectric substrate and be positioned at the epitaxial loayer in described the second dielectric substrate, described epitaxial loayer comprises positive electrode, P-type conduction layer, P/N junction battery, N-type Window layer and the N-type contact layer being formed at successively in described the second dielectric substrate.
2. the laser photovoltaic cell of inverted structure according to claim 1, is characterized in that: also comprise the barrier layer between described P-type conduction layer and P/N junction battery.
3. the laser photovoltaic cell of inverted structure according to claim 2, is characterized in that: described barrier layer is the AlGaAs ((Al) GaInP) of P type.
4. the laser photovoltaic cell of inverted structure according to claim 1, is characterized in that: described P-type conduction layer and the material of N-type contact layer are GaAs, and described P/N junction battery is GaAs battery.
5. the laser photovoltaic cell of inverted structure according to claim 1, is characterized in that: the material of described N-type Window layer is Al
xga
1-xas (1 > x>=0.2) or Ga
0.51in
0.49p.
6. the laser photovoltaic cell of inverted structure according to claim 1, it is characterized in that: also comprise isolation channel, described isolation channel is separated into a plurality of battery units by described photovoltaic cell, between battery unit, be connected in series, described isolation channel runs through respectively described N-type contact layer, N-type Window layer, P/N junction battery, P-type conduction layer and positive electrode.
7. the laser photovoltaic cell of inverted structure according to claim 1, is characterized in that: also comprise negative electrode, described negative electrode is formed on described contact layer.
8. the manufacture method of the laser photovoltaic cell of the arbitrary described inverted structure of claim 1 to 7, is characterized in that, comprising:
(1) at the first Grown as the sacrifice layer of peeling off the first substrate;
(2) on above-mentioned sacrifice layer, grow N-type contact layer as ohmic contact, and be used as the cutoff layer of selective corrosion sacrifice layer;
(3) the N-type Window layer of growing on above-mentioned contact layer;
(4) grow successively in above-mentioned N-type Window layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(5) growing P-type barrier layer on above-mentioned P/N junction battery;
(6) growing P-type conductive layer on above-mentioned barrier layer;
(7) on P-type conduction layer, prepare positive electrode, and annealing forms ohmic contact;
(8) utilize bonding technology between positive electrode surface and the second insulated substrate surface, to prepare bonding/adhesion arrangement layer, by bonding mode/bonding mode, be attached to together;
(9) by the mode of wet etching, remove sacrifice layer, the first substrate is peeled off, be formed on the photovoltaic cell matrix of inverted structure in the second dielectric substrate;
(10) according to battery standard technique, on the photovoltaic cell matrix being formed by abovementioned steps, prepare isolation channel, negative electrode, antireflection layer and contact conductor, obtain target product.
9. the manufacture method of the laser photovoltaic cell of inverted structure according to claim 8, is characterized in that: described conductive layer is P type doping content 1 * 10
18cm
-3above GaAs conductive layer; Described barrier layer is doping content 1 * 10
18cm
-3above P type AlGaAs ((Al) GaInP) barrier layer; Described N-type Window layer is that doping content is 1 * 10
18cm
-3above Window layer; Described N-type contact layer is that doping content is 2 * 10
18cm
-3above GaAs contact layer.
10. the manufacture method of the laser photovoltaic cell of inverted structure according to claim 8, it is characterized in that: in described step (10), successively etching N type contact layer, N-type Window layer, P/N junction battery, P type barrier layer, P-type conduction layer and positive electrode until expose the second dielectric substrate or partial etching the second dielectric substrate to form isolation channel.
The manufacture method of the laser photovoltaic cell of 11. inverted structures according to claim 8, it is characterized in that: in described step (10), etching N type contact layer, N-type Window layer, P/N junction battery, P type barrier layer and P-type conduction layer successively, until expose positive electrode to form positive electrode window, on N-type contact layer, prepare negative electrode.
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