CN104002240B - 研磨部件的外形调整方法以及研磨装置 - Google Patents

研磨部件的外形调整方法以及研磨装置 Download PDF

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Publication number
CN104002240B
CN104002240B CN201410065221.7A CN201410065221A CN104002240B CN 104002240 B CN104002240 B CN 104002240B CN 201410065221 A CN201410065221 A CN 201410065221A CN 104002240 B CN104002240 B CN 104002240B
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China
Prior art keywords
grinding
dresser
target
rate
film thickness
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Chinese (zh)
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CN104002240A (zh
Inventor
岛野隆宽
谷川睦
松尾尚典
山口都章
渡边和英
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Ebara Corp
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Ebara Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201410065221.7A 2013-02-25 2014-02-25 研磨部件的外形调整方法以及研磨装置 Active CN104002240B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013034419A JP5964262B2 (ja) 2013-02-25 2013-02-25 研磨装置に使用される研磨部材のプロファイル調整方法、および研磨装置
JP2013-034419 2013-02-25

Publications (2)

Publication Number Publication Date
CN104002240A CN104002240A (zh) 2014-08-27
CN104002240B true CN104002240B (zh) 2017-04-05

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CN201410065221.7A Active CN104002240B (zh) 2013-02-25 2014-02-25 研磨部件的外形调整方法以及研磨装置

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Country Link
US (1) US9156130B2 (https=)
JP (1) JP5964262B2 (https=)
KR (1) KR101660101B1 (https=)
CN (1) CN104002240B (https=)
TW (1) TWI554361B (https=)

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JP5454513B2 (ja) * 2011-05-27 2014-03-26 信越半導体株式会社 研磨ヘッドの高さ方向の位置の調整方法及びワークの研磨方法
JP5896625B2 (ja) * 2011-06-02 2016-03-30 株式会社荏原製作所 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置
JP6307428B2 (ja) * 2014-12-26 2018-04-04 株式会社荏原製作所 研磨装置およびその制御方法
JP6444785B2 (ja) * 2015-03-19 2018-12-26 株式会社荏原製作所 研磨装置およびその制御方法ならびにドレッシング条件出力方法
CN107851579B (zh) * 2015-05-29 2021-11-09 环球晶圆股份有限公司 用于处理具有多晶磨光的半导体晶片的方法
CN105728857B (zh) * 2016-03-21 2018-02-02 涂雁平 顺随式去毛刺打磨主轴及去刺方法
JP6850631B2 (ja) * 2017-02-27 2021-03-31 株式会社東京精密 研削装置
JP6823541B2 (ja) 2017-05-30 2021-02-03 株式会社荏原製作所 キャリブレーション方法およびキャリブレーションプログラム
JP6971664B2 (ja) * 2017-07-05 2021-11-24 株式会社荏原製作所 基板研磨装置及び方法
US10792783B2 (en) * 2017-11-27 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
US11389928B2 (en) * 2017-11-30 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for conditioning polishing pad
US11738423B2 (en) * 2018-07-31 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
TWI819138B (zh) * 2018-12-21 2023-10-21 日商荏原製作所股份有限公司 研磨裝置及研磨構件的修整方法
JP7113742B2 (ja) * 2018-12-26 2022-08-05 株式会社荏原製作所 研磨装置及び研磨部材のドレッシング方法
JP7113737B2 (ja) * 2018-12-21 2022-08-05 株式会社荏原製作所 研磨装置及び研磨部材のドレッシング方法
TWI695754B (zh) * 2019-08-13 2020-06-11 大量科技股份有限公司 拋光墊即時整修方法
JP7637482B2 (ja) 2020-08-11 2025-02-28 株式会社荏原製作所 基板処理装置及び研磨部材のドレッシング制御方法
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
KR102352972B1 (ko) * 2021-01-13 2022-01-18 성균관대학교산학협력단 폴리싱 패드 컨디셔닝 시뮬레이션 방법 및 장치
CN112658971B (zh) * 2021-03-16 2021-06-22 晶芯成(北京)科技有限公司 一种化学机械研磨方法及其分析系统
CN114559325B (zh) * 2022-03-11 2023-04-14 青岛融合光电科技有限公司 一种通过固定纠偏提高载板玻璃研磨精度的方法及装置
JP7757902B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
CN120287196A (zh) * 2024-11-15 2025-07-11 华海清科股份有限公司 厚度补偿的电涡流检测方法、装置设备和存储介质
CN120170629B (zh) * 2025-05-22 2025-08-19 华海清科股份有限公司 一种晶圆抛光方法、抛光装置和处理设备

Citations (8)

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US5974679A (en) * 1995-10-27 1999-11-02 Applied Materials, Inc. Measuring the profile of a polishing pad in a chemical mechanical polishing system
US6113462A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Feedback loop for selective conditioning of chemical mechanical polishing pad
US6364752B1 (en) * 1996-06-25 2002-04-02 Ebara Corporation Method and apparatus for dressing polishing cloth
JP2002200552A (ja) * 2000-10-24 2002-07-16 Ebara Corp ポリッシング装置
US6495463B2 (en) * 1999-09-28 2002-12-17 Strasbaugh Method for chemical mechanical polishing
JP2003089051A (ja) * 2001-09-17 2003-03-25 Tokyo Seimitsu Co Ltd 研磨装置
JP2012009692A (ja) * 2010-06-25 2012-01-12 Toshiba Corp ドレス方法、研磨方法および研磨装置
CN102814738A (zh) * 2011-06-08 2012-12-12 株式会社荏原制作所 用于护理研磨垫的方法和设备

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JP2001198794A (ja) * 2000-01-21 2001-07-24 Ebara Corp 研磨装置
TW495416B (en) * 2000-10-24 2002-07-21 Ebara Corp Polishing apparatus
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
EP1270148A1 (en) * 2001-06-22 2003-01-02 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for conditioning a polishing pad
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
JP4658182B2 (ja) * 2007-11-28 2011-03-23 株式会社荏原製作所 研磨パッドのプロファイル測定方法
US8221193B2 (en) * 2008-08-07 2012-07-17 Applied Materials, Inc. Closed loop control of pad profile based on metrology feedback
JP5415735B2 (ja) 2008-09-26 2014-02-12 株式会社荏原製作所 ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置
US8292691B2 (en) * 2008-09-29 2012-10-23 Applied Materials, Inc. Use of pad conditioning in temperature controlled CMP
US7899571B2 (en) * 2008-11-05 2011-03-01 Texas Instruments Incorporated Predictive method to improve within wafer CMP uniformity through optimized pad conditioning
JP5504901B2 (ja) 2010-01-13 2014-05-28 株式会社Ｓｕｍｃｏ 研磨パッドの形状修正方法
US9138860B2 (en) 2010-04-20 2015-09-22 Applied Materials, Inc. Closed-loop control for improved polishing pad profiles
US20120270477A1 (en) 2011-04-22 2012-10-25 Nangoy Roy C Measurement of pad thickness and control of conditioning

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5974679A (en) * 1995-10-27 1999-11-02 Applied Materials, Inc. Measuring the profile of a polishing pad in a chemical mechanical polishing system
US6364752B1 (en) * 1996-06-25 2002-04-02 Ebara Corporation Method and apparatus for dressing polishing cloth
US6113462A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Feedback loop for selective conditioning of chemical mechanical polishing pad
US6495463B2 (en) * 1999-09-28 2002-12-17 Strasbaugh Method for chemical mechanical polishing
JP2002200552A (ja) * 2000-10-24 2002-07-16 Ebara Corp ポリッシング装置
JP2003089051A (ja) * 2001-09-17 2003-03-25 Tokyo Seimitsu Co Ltd 研磨装置
JP2012009692A (ja) * 2010-06-25 2012-01-12 Toshiba Corp ドレス方法、研磨方法および研磨装置
CN102814738A (zh) * 2011-06-08 2012-12-12 株式会社荏原制作所 用于护理研磨垫的方法和设备

Also Published As

Publication number Publication date
KR101660101B1 (ko) 2016-09-26
JP5964262B2 (ja) 2016-08-03
US9156130B2 (en) 2015-10-13
JP2014161944A (ja) 2014-09-08
KR20140106405A (ko) 2014-09-03
US20140287653A1 (en) 2014-09-25
TWI554361B (zh) 2016-10-21
CN104002240A (zh) 2014-08-27
TW201436944A (zh) 2014-10-01

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