CN103996612B - AlN thin film growing on metal Al substrate and preparing method and application thereof - Google Patents
AlN thin film growing on metal Al substrate and preparing method and application thereof Download PDFInfo
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- CN103996612B CN103996612B CN201410240802.XA CN201410240802A CN103996612B CN 103996612 B CN103996612 B CN 103996612B CN 201410240802 A CN201410240802 A CN 201410240802A CN 103996612 B CN103996612 B CN 103996612B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
The invention discloses an AlN thin film growing on a metal Al substrate and a preparing method and application thereof. The AlN thin film growing on the metal Al substrate comprises the Al substrate, an Al2O3 protecting layer growing on an epitaxy face which is a face (111) of the Al substrate and an AlN thin film layer growing on the Al2O3 protecting layer in an epitaxial mode. The crystal epitaxial orientation relationship of the Al2O3 protecting layer and the AlN thin film layer is AlN (0001)//Al2O3 (0001)//Al (111). Proper crystal orientation is selected, so that a high-quality AlN epitaxial thin film is obtained on the Al (111) substrate and is used for improving nitride device efficiency. The AlN thin film is mainly used as dielectric layer thin films of a sound wave resonator, a logic circuit, a light-emitting diode, an optoelectronic thin film device, a solar cell, a photodiode, a photoelectric detector, a laser device and the like.
Description
Technical field
The present invention relates to Metalorganic Chemical Vapor Deposition synthesizes the technical field of film, and in particular to be grown in metal Al
AlN thin film on substrate and its preparation method and application, present invention is mainly applied to acoustic resonator, logic circuit, luminous two
The dielectric layer film of pole pipe, optoelectronic film device, solaode, photodiode, photodetector, laser instrument etc..
Background technology
Light emitting diode (LED) as a kind of novel solid lighting source and green light source, with small volume, power consumption
The outstanding feature such as low, environmentally friendly, long service life, high brightness, low in calories and colorful, in outdoor lighting, commercial lighting and dress
The fields such as decorations engineering all have a wide range of applications.Currently, under the increasingly severe background of global warming problem, save energy
Source, reduction greenhouse gas emission become the major issue that the whole world faces jointly.Based on low energy consumption, low stain, low emission
Low-carbon economy, will become the important directions of economic development.In lighting field, the application of LED luminous products is just attract common people's
Sight, LED as a kind of new green light source product, the necessarily trend of future development, 21st century will be with LED
The epoch of the novel illumination light source of representative.But the application cost of LED is higher at this stage, and luminous efficiency is relatively low, these factors are all
LED can be limited significantly to develop to the direction of high-efficient energy-saving environment friendly.
Group III-nitride AlN is in electricity, optics and acoustically has extremely excellent property, in recent years by extensive
Concern.AlN is direct band gap material, and sonic transmissions speed is fast, chemically and thermally good stability, and thermal conductivity is high, thermal coefficient of expansion
It is low, puncture dielectric strength height, be the ideal material for manufacturing efficient LED component.At present, the luminous efficiency of GaN base LED is present
Jing reaches 28% and also further increasing, electric filament lamp (about 2%) that the numerical value is significantly larger than usually used at present or
The luminous efficiency of the lighting systems such as fluorescent lamp (about 10%).Data statisticss show that the current electric consumption on lighting of China exists every year
More than 410000000000 degree, more than Britain's whole nation power consumption of a year.If replacing whole electric filament lamp or part to replace fluorescence with LED
Lamp, can save the electric consumption on lighting for being close to half, the generated energy annual more than Three Gorges Projects.Because the greenhouse gases that illumination is produced are arranged
Put and also therefore can substantially reduce.In addition, compared with fluorescent lamp, GaN base LED does not contain poisonous mercury element, and service life is about
For 100 times of such illuminations.
LED will really realize extensive extensively application, need further to improve the luminous efficiency of LED chip.Although LED's
Luminous efficiency alreadys exceed daylight lamp and electric filament lamp, but commercialization LED luminous efficiencies again below sodium vapor lamp (150lm/w), single
Position lumens/watt it is on the high side.At present, the luminous efficiency of LED chip is not high enough, and one is primarily due to its sapphire and serves as a contrast
What bottom was caused.As lattice mismatch of the sapphire with GaN is up to 17%, very high position during causing extension GaN film, is formed
Dislocation density, so as to reduce the carrier mobility of material, shortens carrier lifetime, and then have impact on the property of GaN base device
Energy.Secondly as the Thermal sapphire coefficient of expansion (6.63 × 10 under room temperature-6/ K) thermal coefficient of expansion (5.6 × 10 compared with GaN-6/K)
Greatly, thermal mismatching degree between the two about -18.4%, after outer layer growth terminates, device from epitaxially grown high temperature cooling to
Room temperature process can produce very big compressive stress, be easily caused the cracking of thin film and substrate.Again, as sapphire thermal conductivity is low
(being 0.25W/cmK when 100 DEG C), it is difficult to the heat produced in chip is discharged in time, causes thermal accumlation, makes the interior of device
Quantum efficiency is reduced, the final performance for affecting device.Further, since sapphire is insulator, it is impossible to make vertical stratification and partly lead
Body device.Therefore there is horizontal mobility in the devices in electric current, cause CURRENT DISTRIBUTION uneven, produce more heat transfer, largely
On have impact on the electrical and optical properties of GaN base LED component.
Therefore a kind of high heat transfer that LED rapidly can be saved area of thermal conductivity material out is urgently found as lining
Bottom.And metal Al is used as the backing material of epitaxial nitride, with three big its unique advantage.First, metal Al has very high
Thermal conductivity, the thermal conductivity of Al is 2.37W/cmK, can timely be transferred out the heat produced in LED chip, to reduce device
Jian Jie areas temperature, on the one hand improves the internal quantum efficiency of device, on the other hand contributes to solving device heat dissipation problem.Second,
Metal Al directly can plate cathode material as the backing material of the LED component of growth GaN base vertical stratification on substrate,
Anode material is plated on P-GaN so that electric current almost all flows vertically through the epitaxial layer of GaN- bases, thus resistance declines, and does not have electricity
Crowded, homogeneous current distribution is flowed, the heat that electric current is produced reduces, and the radiating to device is favourable；Furthermore it is possible to cathode material is straight
Connect plating on the metallic substrate, it is not necessary to electrode is connected in into N-GaN layers by corroding P-GaN layers and active layer, is so made full use of
The material of active layer.3rd, metal Al backing materials can greatly reduce device with respect to other substrates, cheaper
Manufacturing cost.Just because of above-mentioned many advantages, metal substrate has been attempted as the epitaxially grown substrate of group III-nitride
Material.
But metal Al substrates are in unstable chemcial property, when epitaxial temperature is higher than 700 DEG C, epitaxial nitride meeting
There is interfacial reaction between metal substrate, had a strong impact on the quality of epitaxial film growth.Group III-nitride is epitaxially grown
Pioneer's researcher, famous scientist Akasaki et al. were just once attempted using traditional MOCVD or MBE technologies directly in chemistry
The changeable backing material Epitaxial growth nitride of property, as a result finds that extension is extremely difficult at high temperature for thin film.
The content of the invention
To overcome the defect of prior art, the present invention's is to provide a kind of AlN thin film being grown on metal Al substrates,
By selecting suitable crystal orientation, the high-quality AlN epitaxial films obtained on Al (111) substrate, for improving nitride device
Part efficiency.
Another object of the present invention is to a kind of preparation method of the AlN thin film being grown on metal Al substrates is provided, it is raw
Long process is simple, the manufacturing cost that device can be greatly lowered.
A further object of the present invention is to provide the AlN thin film being grown on metal Al substrates in acoustic resonator, logic
Circuit, light emitting diode, optoelectronic film device, solaode, photodiode, photodetector, the dielectric layer of laser instrument
The application of thin film.
The technical solution adopted in the present invention is as follows for achieving the above object：
A kind of AlN thin film being grown on metal Al substrates, which includes Al substrates, and (111) face of Al substrates is epitaxial surface
The Al of upper growth2O3Protective layer and in Al2O3The AlN thin layers of protective layer Epitaxial growth, wherein Al2O3Protective layer and AlN
Thin layer crystalline epitaxial orientation relationship is AlN (0001) //Al2O3(0001)//Al(111)。
In the present invention, Al2O3Protective layer is in Al2O3(0001) Epitaxial growth AlN (0001) thin film place mat, while
It is diffused in epitaxial film also for Al ions are prevented.As a kind of preferred scheme of the present invention, the Al2O3Protective layer
Thickness be 15-25nm.
A kind of preparation method of the AlN thin film being grown on metal Al substrates, which comprises the steps：
1) process of substrate：Metal Al is selected to do substrate, and to substrate surface polishing, cleaning, annealing；
2) protective layer growth：(111) face of Al substrates is adopted for epitaxial surface, through step 1) process after metal Al lining
The Al layers of the one layer of process in bottom upper berth, are passed through O when underlayer temperature is 650-750 DEG C2To formation Al2O3Layer, insulation obtain one layer
Al2O3Protective layer；
3) epitaxial growth AlN thin film：Using pulsed laser deposition in Al2O3Protective layer grows AlN thin film, wherein,
Al2O3Protective layer is AlN (0001) //Al with AlN thin layer crystalline epitaxials orientation relationship2O3(0001)//Al(111)。
In the present invention.Inventor has found that direct extension AlN thin film is highly difficult on Al substrates, is shown formerly by research
One layer of Al of Al substrate growths2O3Protective layer, on the one hand can prevent Al ions to be diffused in epitaxial layer；Another aspect Al2O3For outer
Epitaxial growth AlN thin film provides favourable condition.
In such scheme, step 1) in, polishing concrete technology is：Al substrate surface diamond mud is polished,
Coordinate micro- sem observation substrate surface, after no cut, then substrate is polished again using the method for chemically-mechanicapolish polishing
Process.
In such scheme, step 1) cleaning is cleaned by ultrasonic 5 minutes under room temperature to place the substrate in deionized water, goes
Except Al substrate surface pickup granules, then hydrochloric acid, acetone, washing with alcohol are sequentially passed through, remove surface organic matter；Substrate after cleaning
Dried up with the drying nitrogen that purity is 99.9999%.
Used as the preferred scheme of the present invention, the thickness of the Al layers in the step 2 on substrate is 1-2nm.
In the present invention, annealing can make substrate obtain the surface of atomically flating.Preferably, step 1) in, annealing
Detailed process be：Substrate Al is placed on into pressure for 2 × 10-10The growth of the UHV-PLD of Torr is indoor, high at 450-550 DEG C
Temperature baking 1h is air cooled to room temperature to remove the pollutant of substrate surface, then.
As the preferred scheme of the present invention, step 2) time for being incubated is 25-35 minutes.
In such scheme, step 3) using pulsed laser deposition in Al2O3Protective layer grows the concrete of AlN thin film
Technique is：Underlayer temperature is down to into 450-550 DEG C, is 3.0J/cm with energy2And repetition rate is for 20Hz, λ=248nm's
KrF excimer laser PLD ablation AlN targets, AlN targets purity are 99.99%；Wherein, chamber pressure is 10mTorr, N2
Percent by volume be 99.9999%, V/III is 0.4-0.6ML/s than for 50-60, control the AlN speeds of growth.
The AlN thin film being grown on metal Al substrates of the present invention is preparing acoustic resonator, logic circuit, is lighting
Diode, optoelectronic film device, the application in solaode, photodiode, photodetector, laser instrument.
Compared to existing technology, the beneficial effects of the present invention is：
1. present invention uses metal Al is used as substrate, with growth Al2O3Protective layer can obtain substrate and GaN epitaxial layer
Between very low lattice mismatch, be conducive to the AlN thin film of depositing high-quality low defect, dielectric layer film bulk acoustic can be improved humorous
Shake device quality；
2., present invention uses Al is used as substrate, Al substrates are readily available, and low price advantageously reduces production cost；
3. the pulse laser deposition process that the present invention is adopted, as the predecessor for producing has very high kinetic energy, can be effective
Shorten the nucleated time of nitride, it is ensured that the excellent AlN thin film of the unicity that obtained；
4. the present invention has prepared high-quality AlN thin film, can be used as the buffering of growth high-quality GaN base LED component
Layer material, the excellent thermal conductivity of metal in addition can be used as the LED component of manufacture GaN base vertical stratification so that electric current is almost
The epitaxial layer of GaN- bases is all flowed vertically through, thus resistance declines, no current crowding, homogeneous current distribution, what electric current was produced
Heat reduces, and the radiating to device favorably improves the radiation recombination efficiency of carrier, can increase substantially nitride device such as
The efficiency of dielectric layer FBAR, semiconductor laser, light emitting diode and solaode；
5. the present invention is prepared using the higher metal Al of thermal conductivity as substrate, if being used for growing LED component substrate, can
Promptly the heat in device is conducted out, on the one hand improve the internal quantum efficiency of device, on the other hand help solve device
Heat dissipation problem, is conducive to improving the life-span of LED component；
6. present invention employs low temperature epitaxial techniques and one layer of Al is first grown on Al substrates2O3Protection layer film.At low temperature
Can guarantee that the stability of Al substrates, reduce lattice mismatch and violent interfacial reaction that the volatilization of Al ions is caused, so as to for next
The high-quality AlN film epitaxial layers of step lay good basis；
7. the growth technique of the technology of the present invention growth substrates is unique and simple, with repeatable, epitaxially grown
AlN film defects density is low, crystal mass is high, the advantages of electrical and optical properties are excellent, can be widely applied to semiconductor laser
The fields such as device, light emitting diode and solaode, it is easy to utilize.
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Description of the drawings
Fig. 1 is the schematic cross-section of the high-quality AlN thin film prepared by the present invention；
Fig. 2 is the structural section schematic diagram using LED component prepared in Application Example of the present invention 1；
Fig. 3 is the schematic cross-section using photodetector structure prepared in Application Example of the present invention 2；
Fig. 4 is illustrated using the section of InGaN solar cell device structures prepared in Application Example of the present invention 3
Figure；
Fig. 5 is refletcion high-energy electron diffraction (RHEED) collection of illustrative plates of the high-quality AlN thin film prepared by the present invention；
Fig. 6 is the X-ray swing curve collection of illustrative plates of the high-quality AlN thin film prepared by the present invention.
Specific embodiment
Embodiment 1
As shown in figure 1, the AlN thin film being grown on metal Al substrates shown in the present invention, which includes Al substrates 1, Al linings
(111) face at bottom is the Al grown in epitaxial surface2O3Protective layer 2 and in Al2O3The AlN thin layers of 2 Epitaxial growth of protective layer
3, wherein Al2O3Protective layer 2 is AlN (0001) //Al with 3 crystalline epitaxial orientation relationship of AlN thin layers2O3(0001)//Al
(111)；The metal Al Grown AlN thin film that is grown in is to be prepared by the following method to form：
1) process of substrate：Select metal Al to do substrate, first Al substrate surface diamond mud is polished, is matched somebody with somebody
Close observation by light microscope substrate table and place is polished again to substrate after no cut, then using the method for chemically-mechanicapolish polishing
Reason；Then place the substrate in deionized water and be cleaned by ultrasonic 5 minutes under room temperature, remove Al substrate surface pickup granules, then successively
Through hydrochloric acid, acetone, washing with alcohol, surface organic matter is removed；Substrate after cleaning is dried up with high-purity drying nitrogen；Again by substrate
Al is placed on pressure for 2 × 10-10The growth of the UHV-PLD of Torr is indoor, and at 450 DEG C, high-temperature baking 1h is removing substrate surface
Pollutant, be then air cooled to room temperature；
2) protective layer growth：(111) face of Al substrates is adopted for epitaxial surface, through step 1) process after metal Al lining
The Al layers of the one layer of process in bottom upper berth, are passed through O when underlayer temperature is 750 DEG C2To formation Al2O3Layer, is incubated 30min, obtains one layer
Al2O3Protective layer；
3) epitaxial growth AlN thin film：450 DEG C are down to using pulsed laser deposition underlayer temperature, chamber pressure is
10mTorr、N2Percent by volume be 99.9999%, V/III than for 50, the speed of growth be 0.4ML/s；It is 3.0J/ with energy
cm2And repetition rate is KrF excimer laser (λ=248nm, t=20ns) the PLD ablation AlN targets of 20Hz, target AlN
Purity be 99.99%, in depositing Al N thin film, growth intraventricular pressure is tried hard to keep and is held in 10mTorr；Wherein, the Al2O3Protective layer
It is AlN (0001) //Al with AlN thin layer crystalline epitaxials orientation relationship2O3(0001)//Al(111)。
Embodiment 2
The AlN thin film that is distinguished as with embodiment 1 is to be prepared by the following method to form：
1) process of substrate：Select metal Al to do substrate, first Al substrate surface diamond mud is polished, is matched somebody with somebody
Close observation by light microscope substrate table and place is polished again to substrate after no cut, then using the method for chemically-mechanicapolish polishing
Reason；Then place the substrate in deionized water and be cleaned by ultrasonic 5 minutes under room temperature, remove Al substrate surface pickup granules, then successively
Through hydrochloric acid, acetone, washing with alcohol, surface organic matter is removed；Substrate after cleaning is dried up with high-purity drying nitrogen；Again by substrate
Al is placed on pressure for 2 × 10-10The growth of the UHV-PLD of Torr is indoor, and at 550 DEG C, high-temperature baking 1h is removing substrate surface
Pollutant, be then air cooled to room temperature；
2) protective layer growth：(111) face of Al substrates is adopted for epitaxial surface, through step 1) process after metal Al lining
The Al layers of the one layer of process in bottom upper berth, are passed through O when underlayer temperature is 650 DEG C2To formation Al2O3Layer, is incubated 30min, obtains one layer
Al2O3Protective layer；
3) epitaxial growth AlN thin film：450 DEG C are down to using pulsed laser deposition underlayer temperature, chamber pressure is
10mTorr、N2Percent by volume be 99.9999%, V/III than for 60, the speed of growth be 0.4ML/s；It is 3.0J/ with energy
cm2And repetition rate is KrF excimer laser (λ=248nm, t=20ns) the PLD ablation AlN targets of 20Hz, target AlN
Purity be 99.99%, in depositing Al N thin film, growth intraventricular pressure is tried hard to keep and is held in 10mTorr；Wherein, the Al2O3Protective layer
It is AlN (0001) //Al with AlN thin layer crystalline epitaxials orientation relationship2O3(0001)//Al(111)。
Fig. 5-6 is that the AlN thin film to the present invention is detected, shows to reach 10nm when the thickness of AlN cushions in Fig. 5
When, RHEED collection of illustrative plates is changed into strip pattern from mottled pattern, illustrates the AlN of high-crystallinity has been grown on AlN cushions
Thin film.X-ray swing curve from Fig. 6 can see that half-peak breadth (FWHM) value of AlN is less than 0.6 °；Show in Al (111)
Face Epitaxial growth has gone out high-quality AlN thin film.
Application Example 1
As shown in Fig. 2 using the AlN thin film described in the embodiment of the present invention 1, continuing epitaxial growth and preparing GaN base LED device
Part, which includes Al (111) crystal face Epitaxial growth high-quality AlN thin film 10, and U-GaN thin film 11, N-shaped mix silicon GaN12,
InxGa1-xN multiple quantum well layers 13, p-type mix the GaN layer 14 of magnesium.
The growing n-type GaN epitaxial layer 12 in GaN film 11, about 5 μm of the thickness of epitaxial layer, the concentration of its carrier is 1
×1019cm-3.Then InGaN multiple quantum well layers 13 are grown, thickness is about 110nm, and periodicity is 7, wherein In0.125Ga0.875N traps
Layer is 3nm, and barrier layer is 13nm；The p-type GaN layer 14 of regrowth Mg doping afterwards, thickness is about 350nm；Its carrier concentration is 2
×1016cm-3, last electron beam evaporation formation Ohmic contact；On this basis by N2Anneal under atmosphere, improve p-type GaN
The carrier concentration and mobility of thin film 14, is obtained the GaN base LED component of p-i-n structure.
Application Example 2
As shown in figure 3, using the AlN thin film described in the embodiment of the present invention 2, continuing epitaxial growth and being prepared for photodetection
Device, which includes Al (111) crystal face Epitaxial growth high-quality AlN thin film 20, high-quality U-GaN thin film 21, and N-shaped mixes silicon GaN
22, undoped GaN 23, p-type mix the GaN layer 24 of magnesium；Its concrete preparation process is as follows：
U-GaN thin film 21 is grown on AlN thin film 20, the thickness of epitaxial layer is about 300nm；In 21 growing n-type of GaN film
GaN epitaxial layer 22, about 3 μm of the thickness of epitaxial layer, the concentration of its carrier is 1 × 1019cm-3.Then grow outside intrinsic GaN
Prolong layer 23, thickness is about 200nm, its carrier concentration is 2.2 × 1016cm-3.The p-type GaN layer 24 of regrowth Mg doping afterwards,
About 1.5 μm of thickness.Last electron beam evaporation forms Ohmic contact and schottky junction.On this basis by N2Move back under atmosphere
Fire, improves the carrier concentration and mobility of p-type GaN film 24.The GaN ultraviolet photoelectric detections of prepared p-i-n structure
Under 1V biass, dark current is only 65pA to device, and device is under 1V biass, and the maximum of responsiveness reaches at the 361nm
0.92A/W。
Application Example 3
As shown in figure 4, using the AlN thin film described in the embodiment of the present invention 2, continuing epitaxial growth and being prepared for InGaN too
Positive energy battery device, which includes Al (111) crystal face Epitaxial growth high-quality AlN thin film 30, in growth high-quality GaN thin film
31, and the In with component gradientxGa1-xN cushions 32, N-shaped mix silicon InxGa1-xN33,InxGa1-xN multiple quantum well layers 34, p-type
Mix the In of magnesiumxGa1-xThe value of N shell 35, wherein x can be adjustable between 0-0.2；Its concrete preparation process is as follows：
High-quality GaN film 31 is grown in AlN thin film 30, the In with component gradientxGa1-xN cushions 32, then
Growing n-type mixes silicon InxGa1-xN 33, about 5 μm of the thickness of epitaxial layer, the concentration of its carrier is 1 × 1019cm-3.Then grow
InxGa1-xN multiple quantum well layers 34, thickness are about 300nm, and periodicity is 20, wherein In0.2Ga0.8N well layer is 3nm,
In0.08Ga0.92N barrier layer is 10nm.P-type In of regrowth Mg dopingxGa1-xN shell 35, thickness is about 200nm, its carrier concentration
For 2 × 1016cm-3, last electron beam evaporation formation Ohmic contact.On this basis by N2Anneal under atmosphere, improve p-type
The carrier concentration and mobility of InGaN thin film 35.Prepared InGaN solar cell devices.
Above-mentioned embodiment is only the preferred embodiment of the present invention, it is impossible to limit the scope of protection of the invention with this,
The change and replacement of any unsubstantiality that those skilled in the art is done on the basis of the present invention belongs to institute of the present invention
Claimed scope.
Claims (10)
1. a kind of AlN thin film being grown on metal Al substrates, it is characterised in that：Which includes Al substrates, (111) face of Al substrates
For the Al grown in epitaxial surface2O3Protective layer and in Al2O3The AlN thin layers of protective layer Epitaxial growth, wherein Al2O3Protection
Layer is AlN (0001) //Al with AlN thin layer crystalline epitaxials orientation relationship2O3(0001)//Al(111)；
The preparation method of the AlN thin film being grown on metal Al substrates, comprises the steps：
1) process of substrate：Metal Al is selected to do substrate, and to substrate surface polishing, cleaning, annealing；
2) protective layer growth：(111) face of Al substrates is adopted for epitaxial surface, through step 1) process after metal Al substrates on
One layer of Al layer of paving, is passed through O when underlayer temperature is 650-750 DEG C2To formation Al2O3Layer, insulation obtain one layer of Al2O3Protective layer；
3) epitaxial growth AlN thin film：Using pulsed laser deposition in Al2O3Protective layer grows AlN thin film, wherein, Al2O3
Protective layer is AlN (0001) //Al with AlN thin layer crystalline epitaxials orientation relationship2O3(0001)//Al(111)。
2. the AlN thin film being grown on metal Al substrates according to claim 1, it is characterised in that：The Al2O3Protection
The thickness of layer is 15-25nm.
3. a kind of preparation method of the AlN thin film being grown on metal Al substrates as claimed in claim 2, it is characterised in that
Comprise the steps：
1) process of substrate：Metal Al is selected to do substrate, and to substrate surface polishing, cleaning, annealing；
2) protective layer growth：(111) face of Al substrates is adopted for epitaxial surface, through step 1) process after metal Al substrates on
One layer of Al layer of paving, is passed through O when underlayer temperature is 650-750 DEG C2To formation Al2O3Layer, insulation obtain one layer of Al2O3Protective layer；
3) epitaxial growth AlN thin film：Using pulsed laser deposition in Al2O3Protective layer grows AlN thin film, wherein, Al2O3
Protective layer is AlN (0001) //Al with AlN thin layer crystalline epitaxials orientation relationship2O3(0001)//Al(111)。
4. preparation method according to claim 3, it is characterised in that step 1) in, polishing concrete technology is：By Al substrates
Surface diamond mud is polished, and coordinates micro- sem observation substrate surface, after no cut, then is thrown using chemical machinery
The method of light is processed by shot blasting again to substrate.
5. preparation method according to claim 3, it is characterised in that step 1) in, cleaning is to place the substrate into
It is cleaned by ultrasonic 5 minutes under room temperature in ionized water, removes Al substrate surface pickup granules, then sequentially pass through hydrochloric acid, acetone, ethanol and wash
Wash, remove surface organic matter；Substrate purity after cleaning is that 99.9999% drying nitrogen is dried up.
6. preparation method according to claim 3, it is characterised in that step 1) in, the detailed process of annealing is：By substrate
Al is placed on pressure for 2 × 10-10The growth of the UHV-PLD of Torr is indoor, and at 450-550 DEG C, high-temperature baking 1h is removing substrate
The pollutant on surface, are then air cooled to room temperature.
7. preparation method according to claim 3, it is characterised in that the thickness of the Al layers in the step 2 on substrate is
1-2nm。
8. preparation method according to claim 3, it is characterised in that step 2) time for being incubated is 25-35 minutes.
9. preparation method according to claim 3, it is characterised in that step 3) in, using pulsed laser deposition in Al2O3
Protective layer grows the concrete technology of AlN thin film：Underlayer temperature is down to into 450-550 DEG C, is 3.0J/cm with energy2
And repetition rate is the KrF excimer laser PLD ablation AlN targets of 20Hz, λ=248nm, AlN target purity is
99.99%；Wherein, chamber pressure is 10mTorr, pressure N2Percent by volume be 99.9999%, V/III than for 50-
60, the AlN speeds of growth are controlled for 0.4-0.6ML/s.
10. the AlN thin film being grown in as claimed in claim 1 on metal Al substrates prepare acoustic resonator, logic circuit,
Application in light emitting diode, solaode, photodiode, photodetector, laser instrument.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1281247A (en) * | 1999-07-14 | 2001-01-24 | 华上光电股份有限公司 | Epitaxial growth method of semiconductor on substrate with high mismatched lattices |
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2014
- 2014-05-30 CN CN201410240802.XA patent/CN103996612B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1281247A (en) * | 1999-07-14 | 2001-01-24 | 华上光电股份有限公司 | Epitaxial growth method of semiconductor on substrate with high mismatched lattices |
Non-Patent Citations (1)
| Title |
|---|
| Temperature dependence of in-plane stresses in sublayers of Al/AlN/ Al2O3(0001) structure;J.Keckes et al;《Journal of Crystal Growth》;20041231;第262卷;第119-123页 * |
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Denomination of invention: An AlN thin film grown on metal Al substrate and its preparation method and application Effective date of registration: 20220926 Granted publication date: 20170510 Pledgee: Agricultural Bank of China Co.,Ltd. Heyuan Yuancheng District Sub branch Pledgor: Guangzhou Everbright Technology Co.,Ltd. Registration number: Y2022980016273 |