CN103985767A - Schottky barrier device and manufacture method thereof - Google Patents
Schottky barrier device and manufacture method thereof Download PDFInfo
- Publication number
- CN103985767A CN103985767A CN201410251164.1A CN201410251164A CN103985767A CN 103985767 A CN103985767 A CN 103985767A CN 201410251164 A CN201410251164 A CN 201410251164A CN 103985767 A CN103985767 A CN 103985767A
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- Prior art keywords
- layer
- schottky
- oxygen
- barrier
- metal silicide
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- 230000004888 barrier function Effects 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 229910021332 silicide Inorganic materials 0.000 claims description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Chemical group 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000001883 metal evaporation Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910013627 M-Si Inorganic materials 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000002860 competitive effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a schottky barrier device and a manufacture method thereof. The schottky barrier device has an oxygen-doped schottky barrier region (O-M-Si), the lower barrier height compared with that of a conventional schottky device, and has the low forward saturation voltage drop (VF) under the same area compared with that of the conventional schottky device.
Description
Technical field
The present invention is mainly concerned with barrier junction composition and the manufacturing process of schottky barrier device, relates in particular to a kind of oxygen-doped metal silicide barrier junction of schottky barrier device and the making flow process of the manufacturing.
Background technology
Schottky semiconductor device is used widely at present, the maximum performance advantage of the more common PN junction diode of schottky device is that it has lower forward saturation voltage drop (VF), and evaluate now the main evaluation index of schottky device that different manufacturers manufacture, under homalographic, the schottky device of producing has lower forward saturation voltage drop, will have more competitive advantage; And the invention provides a kind of schottky barrier device, and under equal conditions there is lower forward saturation voltage drop, and only in traditional making flow process, slightly change, be very easy to realize.
Summary of the invention
Schottky barrier device of the present invention has low forward saturation voltage drop, and slightly changes in traditional making flow process, can realize.
The invention provides a kind of schottky barrier device and preparation method thereof:
1, a schottky barrier device, is characterized in that: barrier layer (O-M-Si) is the barrier junction of oxygen-doped metal silicide formation
；
2, schottky barrier device as claimed in claim 1, it is characterized in that: described schottky barrier layer (O-M-Si) is the thin layer barrier metal by sputter, use to have after weak oxide solution cleans with epitaxial loayer top N-type semi-conducting material and epitaxial loayer top N-type thereof to form the active oxidation silicon layer that one deck is thin, under 450 ℃ of-500 ℃ of blanket of nitrogen, alloy forms jointly;
3, the manufacture method of schottky barrier device as claimed in claim 1, is characterized in that: can form the manufacturing process of the schottky barrier device of oxygen-doped metal silicide barrier junction, comprise the steps:
A, the layer of oxide layer of growing on epitaxial loayer, carry out photoetching for the first time, corrosion, and carve and opens in Jiang Huan district, carries out boron doping knot and form terminal protection ring P+;
B, carry out the corrosion of photoetching for the second time, oxide layer, the oxide layer corrosion of barrier region to be done is clean, expose N-superficial layer;
After C, removal particle cleaning, use a kind of solution with weak oxide to clean, at N-superficial layer, form the thin active oxidation layer of one deck, carry out again afterwards sheet metal deposit, adopt the N of 450-500 ℃
2alloy, will form the oxygen-doped metal silicide of one deck (O-M-Si) on N-top layer, this oxygen-doped metal silicide has schottky barrier junction performance, and lower than the barrier height of not oxygen-doped metal silicide (M-Si); Active oxidation silicon layer thickness scope is between 0.6nm-2nm, and active oxidation silicon layer thickness forms oxygen-doped metal silicide (O-M-Si) during lower than 0.3nm will be seldom, reduces forward saturation voltage drop not obvious, relatively approaches conventional schottky device; And active oxidation silicon layer thickness is during higher than 5nm, formation that will the oxygen-doped metal silicide of impact, even can not form metal silicide; Therefore selecting the solution working temperature of weak oxide and time is important control point;
D, utilize metal evaporation equipment, complete the evaporation of front metal layer, carry out photoetching for the third time, corrosion of metals, form front metal layer pattern;
E, utilize thinning technique by substrate layer bottom attenuate, then carry out metal layer on back evaporation, whole schottky junction is configured to.
The processing manufacturing process of schottky barrier device of the present invention, be characterized in increasing a step and use the solution cleaning step with weak oxide on traditional manufacturing process, be used to form oxygen-doped metal silicide barrier junction, formation has the schottky barrier device of low forward saturation voltage drop, improves the competitive advantage of Schottky barrier product.
Accompanying drawing explanation
Fig. 1 is a kind of schottky barrier device structure chart of the present invention;
Fig. 2 is for adopting schottky device forward I-V curve of the present invention and traditional schottky device comparison diagram;
Fig. 3 is for adopting the reverse V-I curve of schottky device of the present invention and traditional schottky device comparison diagram.
Embodiment
Fig. 1 shows a kind of schottky barrier device structural representation of the present invention, below in conjunction with Fig. 1, a kind of employing schottky barrier device making of the present invention flow process is described.
Procedure for processing is as follows:
A, the layer of oxide layer of growing on epitaxial loayer, carry out photoetching for the first time, corrosion, and carve and opens in Jiang Huan district, carries out boron doping knot and form terminal protection ring P+;
B, carry out the corrosion of photoetching for the second time, oxide layer, the oxide layer corrosion of barrier region to be done is clean, expose N-superficial layer;
After C, removal particle cleaning, use a kind of solution with weak oxide to clean, at N-superficial layer, form the thin active oxidation layer of one deck, carry out again afterwards sheet metal deposit, adopt the N of 450-500 ℃
2alloy, will form the oxygen-doped metal silicide of one deck (O-M-Si) on N-top layer, this oxygen-doped metal silicide has schottky barrier junction performance, and lower than the barrier height of not oxygen-doped metal silicide (M-Si); Active oxidation silicon layer thickness scope is between 0.6nm-2nm, and active oxidation silicon layer thickness forms oxygen-doped metal silicide (O-M-Si) during lower than 0.3nm will be seldom, reduces forward saturation voltage drop not obvious, relatively approaches conventional schottky device; And active oxidation silicon layer thickness is during higher than 5nm, formation that will the oxygen-doped metal silicide of impact, even can not form metal silicide; Therefore selecting solution, working temperature and the time of weak oxide is important control point;
D, utilize metal evaporation equipment, complete the evaporation of front metal layer, carry out photoetching for the third time, corrosion of metals, form front metal layer pattern;
E, utilize thinning technique by substrate layer bottom attenuate, then carry out metal layer on back evaporation, whole schottky junction is configured to.
Schottky device and the conventional schottky device by schottky device shown in Fig. 1 and manufacturing flow process, produced carry out test comparison, and as shown in Figure 2, oppositely V-I curve as shown in Figure 3 for forward I-V curve.
Fig. 2 shows and uses employing schottky device of the present invention and the traditional schottky device forward I-V curve comparison diagram that identical layout size is chromium metal for 38mil, barrier metal,
This figure is the forward I-V curve of graphic instrument test, use the test curve figure comparison of schottky device forward conduction curve (11) Yu the traditional schottky device forward conduction curve (12) of this invention, schottky barrier device forward saturation voltage drop VF of the present invention is lower than traditional schottky device forward saturation voltage drop VF, when IF=1.5A, schottky barrier device forward saturation voltage drop VF of the present invention is than traditional low 20mV of schottky device forward saturation voltage drop VF; Adopt schottky barrier device VF performance of the present invention to have competitive advantage.
Fig. 3 shows and uses the reverse V-I curve of employing schottky barrier device of the present invention and the traditional schottky device comparison diagram that identical layout size is chromium metal for 38mil, barrier metal,
This figure is the forward V-I curve of graphic instrument test, use the test curve figure comparison of schottky barrier device reverse breakdown curve (21) Yu the traditional schottky device reverse breakdown curve (22) of this invention, schottky barrier device reverse leakage IR of the present invention is slightly higher than traditional schottky device reverse leakage current IR, when VR=50V, schottky barrier device reverse leakage IR test value 0.038mA of the present invention is than traditional high 0.007mA of schottky device reverse leakage IR test value 0.031mA, meet the IR of testing standard lower than 50uA requirement, meet instructions for use; Adopt the reverse performance no significant difference of schottky barrier device of the present invention.
By above-described embodiment, set forth the present invention, also can adopt other embodiment to realize the present invention simultaneously.The present invention is not limited to above-mentioned specific embodiment, so the present invention is by claims circumscription.
Claims (3)
1. a schottky barrier device, is characterized in that: barrier layer (O-M-Si) is the barrier junction of oxygen-doped metal silicide formation.
2. schottky barrier device as claimed in claim 1, it is characterized in that: described schottky barrier layer (O-M-Si) is the thin layer barrier metal by sputter, use to have after weak oxide solution cleans with epitaxial loayer top N-type semi-conducting material and epitaxial loayer top N-type thereof to form the active oxidation silicon layer that one deck is thin, under 450 ℃ of-500 ℃ of blanket of nitrogen, alloy forms jointly.
3. the manufacture method of schottky barrier device as claimed in claim 1, is characterized in that: can form the manufacturing process of the schottky barrier device of oxygen-doped metal silicide barrier junction, comprise the steps:
A, the layer of oxide layer of growing on epitaxial loayer, carry out photoetching for the first time, corrosion, and carve and opens in Jiang Huan district, carries out boron doping knot and form terminal protection ring P+;
B, carry out the corrosion of photoetching for the second time, oxide layer, the oxide layer corrosion of barrier region to be done is clean, expose N-superficial layer;
After C, removal particle cleaning, use a kind of solution with weak oxide to clean, at N-superficial layer, form the thin active oxidation layer of one deck, carry out again afterwards sheet metal deposit, adopt the N of 450-500 ℃
2alloy, will form the oxygen-doped metal silicide of one deck (O-M-Si) on N-top layer, this oxygen-doped metal silicide has schottky barrier junction performance, and lower than the barrier height of not oxygen-doped metal silicide (M-Si); Active oxidation silicon layer thickness scope is between 0.6nm-2nm, and active oxidation silicon layer thickness forms oxygen-doped metal silicide (O-M-Si) during lower than 0.3nm will be seldom, reduces forward saturation voltage drop not obvious, relatively approaches conventional schottky device; And active oxidation silicon layer thickness is during higher than 5nm, formation that will the oxygen-doped metal silicide of impact, even can not form metal silicide; Therefore selecting the solution working temperature of weak oxide and time is important control point;
D, utilize metal evaporation equipment, complete the evaporation of front metal layer, carry out photoetching for the third time, corrosion of metals, form front metal layer pattern;
E, utilize thinning technique by substrate layer bottom attenuate, then carry out metal layer on back evaporation, whole schottky junction is configured to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410251164.1A CN103985767A (en) | 2014-06-06 | 2014-06-06 | Schottky barrier device and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410251164.1A CN103985767A (en) | 2014-06-06 | 2014-06-06 | Schottky barrier device and manufacture method thereof |
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| CN103985767A true CN103985767A (en) | 2014-08-13 |
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| CN201410251164.1A Pending CN103985767A (en) | 2014-06-06 | 2014-06-06 | Schottky barrier device and manufacture method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226103A (en) * | 2015-10-14 | 2016-01-06 | 上海芯石微电子有限公司 | Containing schottky device and the manufacture method of directed diffusion junctions |
| CN106409828A (en) * | 2016-11-30 | 2017-02-15 | 上海芯石微电子有限公司 | Half-bridge rectification Schottky device suitable for miniaturization packaging and manufacturing method thereof |
| WO2021139362A1 (en) * | 2020-01-10 | 2021-07-15 | 苏州晶湛半导体有限公司 | Diode and manufacturing method therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211974A1 (en) * | 2003-04-24 | 2004-10-28 | Chip Integration Tech. Co., Ltd. | Two mask shottky barrier diode with locos structure |
| CN101697357A (en) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | Schottky barrier diode and preparation method thereof |
| CN101740641A (en) * | 2009-12-24 | 2010-06-16 | 杭州立昂电子有限公司 | Semiconductor device |
| CN103311316A (en) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | Schottky diode and manufacturing method thereof |
-
2014
- 2014-06-06 CN CN201410251164.1A patent/CN103985767A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211974A1 (en) * | 2003-04-24 | 2004-10-28 | Chip Integration Tech. Co., Ltd. | Two mask shottky barrier diode with locos structure |
| CN101697357A (en) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | Schottky barrier diode and preparation method thereof |
| CN101740641A (en) * | 2009-12-24 | 2010-06-16 | 杭州立昂电子有限公司 | Semiconductor device |
| CN103311316A (en) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | Schottky diode and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226103A (en) * | 2015-10-14 | 2016-01-06 | 上海芯石微电子有限公司 | Containing schottky device and the manufacture method of directed diffusion junctions |
| CN106409828A (en) * | 2016-11-30 | 2017-02-15 | 上海芯石微电子有限公司 | Half-bridge rectification Schottky device suitable for miniaturization packaging and manufacturing method thereof |
| CN106409828B (en) * | 2016-11-30 | 2023-06-02 | 上海芯石微电子有限公司 | Half-bridge rectifying schottky device suitable for miniaturized packaging and manufacturing method |
| WO2021139362A1 (en) * | 2020-01-10 | 2021-07-15 | 苏州晶湛半导体有限公司 | Diode and manufacturing method therefor |
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